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Chapter of the Year Award Committee

  • Vice President of Regions & Chapters

    • M.K. Radhakrishnan
       - Senior Member
      NanoRel Technical Consultants
      273, 18D Main, 6th Block
      Koramangla, Bangalore 560095
      India
      Phone 1:
      +91 80 25630695

      Phone 2
      +91 9447663869

      Lecture Topics: 1. Physical Analysis Challenges and Interface Physics Studies in Silicon Nano Devices 2.  Building in Reliability in Devices through Analysis and Study of Failure Mechanisms.


      Biography:  M.K. Radhakrishnan (M’82-SM’94) received B.Sc from Kerala University, India in 1972, M.Sc in Solid State electronics from Sardar Patel University, India in 1975 and Ph.Ddegree in Semiconductor Physics from Cochin University of Science and Technology in 1981.


      He is currently Directorof NanoRel Technical Consultants Singapore from 2004.  He has been with Indian Space Research Organization till 1990. From 1991-1993 he was with ST Microelectronics Singapore. From 1993 to 2001 he was with Institute of Microelectronics Singapore, where he pioneered the setting up of a full-fledged device failure analysis laboratory.  From 1994 to 2004 he served as adjunct professor at National University of Singapore. His current research interests include analysis and reliability in nano-electronic devices and interface physics studies.


      Dr. Radhakrishnan is a fellow of Institution of Electrical and Telecommunication Engineers India, member of Electron Device Failure Analysis Society (EDFAS) USA and ESD Association USA.  He served as Editor of Journal of Semiconductor Technology and Science (Korea) during 2001-2003 and is an Editorial board member of Microelectronics Reliability journal (UK). He served as Guest Editor to IEEE Transactions Devices Materials and Reliability and edited or co-edited of 4 conference proceedings.  He was Technical Chair IEEE International Symposium on Physical and Failure Analysis of ICs (IPFA) in 1995 and 1997 and General Chair of IPFA in 1999.  He was IEEEIEDST General Chair in 2009. He has been in the technical program committees of ESREF, IRPS, EPTC, MIEL, ICEE and EOS/ESD Symposium.  Currently he is the Editor-in Chief of IEEE EDS Newsletter and serves as a member of IEEE EDS Technical Committee on Electronic Materials.  He is a Distinguished Lecturer of IEEE Electron Devices Society.


       

  • Regions & Chapters Committee Members

    • Chih-Hung (James) Chen
      McMaster University
      Associate Professor, Electrical and Computer Engineering
      ITB-A321 McMaster University
      1280 Main Street West
      Hamilton, Ontario L8S 4K1
      Canada
      Phone 1:
      +1 905 525 9140 Ext. 27084

      Fax:
      +1 905 521 2922
    • Albert Chin
       - Fellow
      Thin Film Transistors
      National Chiao Tung University
      Dept. of Electronics Engineering
      Hsinchu Taiwan
      Phone 1:
      +886-3573-1841

      Fax:
      +886-3572-4361
      Lecture Topics: high-Îș Si and Ge CMOS, high-Îș flash memory, ultra-low power green electronic devices, TFT, device-level 3D IC, Si RF devices

      Biography: Albert Chin received Ph.D. from University of Michigan, Ann Arbor, in 1989 and B.S. from National Tsing Hua University in 1982.
      He was with AT&T Bell Labs, General Electric E-Lab, and Texas Instruments SPDC. He has been a professor, vice executive officer of diamond project and deputy director of National Chiao Tung University, and a visiting Professor at National University of Singapore.
      He is a pioneer on low DC-power high-Îș CMOS, high-Îș Flash memory, high mobility Ge-On-Insulator, low AC-power 3D IC, high power asymmetric-MOSFET, Si fs/THz devices, and resonant-cavity photo-detector. He co-authored >500 papers and 7 “Highly Cited Papers” (top 1% citation). His high-Îș CMOS, GeOI, Flash memory, and RF devices were also cited by ITRS www.itrs.net
      Dr. Chin has served as Subcommittee Chair and Asian Arrangements Chair of IEDM Executive Committee, Editor of IEEE Electron Device Letters, Guest Editor & Editor-in-Chief of IEEE JEDS Special Issue on Advanced Technology for Ultra-Low Power Electronic Devices, and IEEE EDS Technical Committee Chairs on both Electronic Materials and Compound Semiconductor Devices & Circuits. He is an IEEE Fellow, Optical Society of America Fellow, and Asia-Pacific Academy of Materials Academician.
    • Ming Liu
       - Senior Member
      Director - Lab of Nano-fabrication and Novel Device Integration Technology
      Institute of Microelectronics, CAS
      No.3, Bei-Tu-Cheng West Road
      Beijing 100029
      China
      Phone 1:
      86-10-82995578

      Fax:
      86-10-82995583
      Lecture Topics: nano-fabrication, advanced memory device (charge trap memory, nanocrystal floating gate and resistive switching memory device), nano-electronic device and integrated technology, molecular electronic device and its integration
    • Durga Misra
       - Senior Member
      NJ Institute of Technology
      Electrical and Comp. Eng. Department
      323 M L King Blvd.
      Newark, NJ 07102-1824
      USA
      Phone 1:
      +1 973 596 5739

      Lecture Topics:
      1. Challenges for Nanoelectronics: More Moore and More than Moore.
      2. High-k on High-Mobility Substrates: An interface Issue
    • Adelmo Ortiz-Conde
       - Senior Member
      Silicon and Column IV Semiconductor Devices; Thin Film Transistors
      Universidad Simon Bolivar
      Dpto. de Electronica
      Apartado Postal 89000
      Caracas 1080
      Venezuela
      Phone 1:
      +58-212-9064010

      Fax:
      +58-212-9064025
      Lecture Topics: MOSFET threshold voltage extraction methods Compact models of Double-Gate MOSFETs Evolution of MOSFETs toward nanoelectronics Integration-based Methods for Device Parameter Extraction and Distortion Evaluation Modeling and Characterization of Diodes and Solar Cells Application of Lambertù

      Adelmo Ortiz-Conde (S’82, M'85, SM'97) was born in Caracas, Venezuela, on November 28, 1956. He received the professional Electronics Engineer degree from Universidad Simón Bolívar (USB), Caracas, Venezuela, in 1979 and the M.E. and Ph.D. from the University of Florida, Gainesville, in 1982 and 1985, respectively. His doctoral research, under the guidance of Prof. J. G. Fossum, was on the Effects of Grain Boundaries in SOI MOSFET’s.
      From 1979 to 1980, he served as an instructor in the Electronics Department at USB. In 1985, he joined the technical Staff of Bell Laboratories, Reading, PA, where he was engaged in the development of high voltage integrated circuits. Since 1987 he returned to the Electronics Department at USB where he was promoted to Full Professor in 1995. He was on sabbatical leave at Florida International University, Miami, from September to December 1993, and at University of Central Florida (UCF), Orlando, from January to August 1994, and again from July to December 1998. He also was on sabbatical leave at “Centro de Investigaciones y Estudios Avanzados” (CINVESTAV) National Polytechnic Institute (IPN), Mexico City, Mexico, from October 2000 to February 2001.
      He has coauthored one textbook, Analysis and Design of MOSFETs: Modeling, Simulation and Parameter Extraction (Springer, 1998, ISBN: 978-0-412-14601-5), over 150 international technical journal and conference articles (including 15 invited review articles). His present research interests include the modeling and parameter extraction of semiconductor devices.
      Dr. Ortiz-Conde is an EDS Distinguished Lecturer and the Chair of IEEE’s CAS/ED Venezuelan Chapter. He was the Region 9 Editor of IEEE EDS Newsletter from 2000 to 2005. He is a Member of the Editorial Advisory Board of various technical journals: Microelectronics and Reliability, “Universidad Ciencia y Tecnología” and “Revista Ingeniería UC”. He regularly serves as reviewer of several international journals, including IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEEE Transactions on Circuits and Systems I, Electronics Letters, Microelectronics Reliability, Solid State Electronics, Solar Energy Materials and Solar Cells, Semiconductor Science and Technology, Microelectronics Journal, Applied Energy, and Journal of Applied Physics. He has been a member of the Technical Program Committees of a variety of international conferences: Microelectronics Conference (MIEL), International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Symposium on Microelectronics Technology and Devices (SBMICRO), Design of Circuits and Integrated Systems Conference (DCIS), Latin American Symposium on Circuits and Systems (LASCAS), and IEEE ANDESCON. He was the General Chairperson of the first IEEE International Caribbean Conference on Devices, Circuits, and Systems (ICCDCS) in 1995, Technical Chairperson of the second, fourth and fifth editions of this conference in 1998, 2002 and 2004 respectively, and the Chairperson of the Steering Committee in 2000.
    • Adam Osseiran
      Director NNTTF
      School of Engineering
      Edith Cowan University
      270 Joondalup Drive
      Joondalup, WA 6027
      Australia
      Phone 1:
      +61 (08) 6304 5752

      Fax:
      +61 (08) 6304 5811
    • Soumya Pandit
      Institute of Radio Physics and Electronics
      University of Calcutta
      India
      Phone 1:
      +919874852007

      Lecture Topics: Process Variability and Variability Resistant Device Design, Low Power VLSI Design, Temperature Analysis of Advanced MOS Transistor.


      Biography: Soumya Pandit received Ph.D. from Indian Institute of Technology, Kharagpur, India in the year 2009 and Master degree in Radio Physics and Electronics in the year 2000. Currently he is associated with the Institute of Radio Physics and Electronics, University of Calcutta as Assistant Professor. The research interest of Dr. Pandit includes device design and optimization for System-on-Chip Applications. Dr. Pandit was the Chair of ED Calcutta Chapter for the year 2014, 2015 and is the founder chapter advisor to ED University of Calcutta Student Branch Chapter.

    • Sean Rommel
      Rochester Institute of Technology
      82 Lomb Memorial Drive
      Rochester, NY 14623-5604
      USA

  • Regions 1-3 & 7 SRC Chair

  • Regions 1-3, 7 SRC Vice Chairs

    • Vijay Arora
      Wilkes University
      Division of Engineering, SLC237
      84 West South Street
      Wilkes-Barre, PA 18766
      USA
      Phone 1:
      (570) 408-4813

      Lecture Topics: Nanoelectronics, Quantum Engineering of Low-Dimensional Nanoensembles, High-Field Transport, Ballistic Transport, Carbon-Based Nanostructures, Graphene Electronics, Quantum Physics to Nanoengineering
    • Paul Berger
       - Fellow
      The Ohio State University
      205 Dreese Laboratory, 2015 Neil Avenue
      Columbus, OH 43210
      United States of America
      Phone 1:
      (614) 247-6235

      Fax:
      (614) 292-7596
      Lecture Topics: In 2011, he was established as an IEEE Distinguished Lecturer for EDS. Please contact him directly if you are interested in a seminar: Possible seminar topics include: (1) Organic Photovoltaics; (2) Quantum Tunneling Electronics; (3) Passive Millimeter-Wave Imaging Sensors; (4) Plastic SmartCards
    • Ioannis (John) Kymissis
       - Molecular and Organic Devices
      Columbia University
      Electrical Engineering
      500 W120th Street Room 1300/MC 4712
      New York, NY 10027
      USA
      Phone 1:
      347-850-0235

      Phone 2
      212-854-4023

      Fax:
      212-932-9421
      Ioannis (John) Kymissis is an electrical engineer teaching at Columbia University. His area of specialization is solid state electronics and device fabrication, with an emphasis on thin film devices and the use of organic semiconductors in his work. He graduated with his SB, M.Eng., and Ph.D. degrees from MIT, and after working as a post-doc and at QDVison, joined the faculty at Columbia University in 2006. John has won a number of awards for his work, including the NSF CAREER award, the IEEE EDS Paul Rappaport award, the Vodaphone Americas Foundation Wireless Innovation Award, and the MIT Clean Energy Prize. He is currently serving as the editor-in-chief of the Journal of the Society for Information Display and is the general chair for the 2013 Device Research Conference.
  • Regions 4-6 SRC Chair

    • Jayasimha Prasad
       - Fellow
      Micrel Semiconductor
      1849 Fortune Drive
      San Jose, CA 95131
      USA
      Phone 1:
      408-435-3451

      Fax:
      408-944-0510
      Lecture Topics: Silicon-Germanium Heterojunction Bipolar Technology Compound Semiconductor Heterojunction Bipolar Technology Low Frequency and High Frequency Noise in Transistors High Frequency Characterization of Transistors Power MOSFET Technology
  • Regions 4-6 SRC Vice Chairs

    • Reza Arghavani
      Lam Research Corp
    • Adam Conway
      Lawrence Livemore National Laboratory
      1987 Rheem Dr.
      Pleasanton, CA 94588
      USA
      Phone 1:
      (925) 422-2412

      Fax:
      (925) 422-7310
      Dr. Adam Conway is a post doctoral research staff member in the Center for Meso, Micro and Nano technology at Lawrence Livermore National Laboratory. His current research interests include novel materials and device structures for semiconductor radiation detectors and solar cells. Before joining LLNL he graduated from the University of California, San Diego in 2006. His dissertation work, which was in collaboration with HRL Laboratories, LLC, contributed to novel characterization and modeling techniques for RF and millimeter wave GaN based heterostructure field effect transistors, as well as reliability measurements and physics of failure in these devices. His expertise includes semiconductor device physics, compact modeling, device simulation, electrical characterization and processing of semiconductor materials and devices. He is the author or co-author of over 30 journal papers and conference presentations and 1 patent in the area of semiconductor devices.
    • Shadi A. Dayeh
      Los Alamos National Laboratory
      Center of Integrated Nanotechnologies
      P. O. Box 1663, K771
      Los Alamos, NM 87545
      USA
      Phone 1:
      +1 505 665 0334

      Fax:
      +1 505 665 9030
  • Region 8 SRC Chair

    • Arokia Nathan
       - Fellow
      Cambridge University Centre for Advanced Photonics and Electronics
      Electrical Engineering Division
      9, JJ Thomson Avenue
      Cambridge CB3 0FA
      United Kingdom
      Lecture Topic: Large Area Electronics, Transparent Electronics, Displays, Imaging, Nano-Bio-Systems
  • Region 8 SRC Vice Chairs

    • Muhammad Mustafa Hussain
       - MOS Devices and Technology
      Senior Member
      King Abdullah University of Science and Technology
      3824 Yarborough Ave
      Austin, TX 78744
      USA
      Phone 1:
      +1 (512) 351-3527

      Muhammad Mustafa Hussain (PhD, ECE, UT Austin, Dec 2005) is an Associate Professor of the Electrical Engineering Program of King Abdullah University of Science and Technology (KAUST), Saudi Arabia. Before joining KAUST in August of 2009, he was Program Manager Emerging Technology Program in SEMATECH, Austin where his program was supported by all the major semiconductor industries and US DARPA. He is the Fellow of American Physical Society (APS), Institute of Physics, UK, IEEE EDS Distinguished Lecturer, Editor-in-Chief of Applied Nanoscience (Springer-Nature), Editor of IEEE T-ED, and an IEEE Senior Member. He has 250+ research papers (including 20 invited reviews, 25 cover articles and 117 journal papers), 50+ issued and pending US patents. His students are serving as faculty and researchers in MIT Media Lab, UC Berkeley, Harvard, UCLA, Yale, Purdue, TSMC, KACST, KFUPM, and DOW Chemicals. Scientific American has listed his research as one of the Top 10 World Changing Ideas of 2014. Applied Physics Letters selected his paper as the Top Feature Article of 2015. He has received 40 research awards including IEEE Region 5 Outstanding Individual Achievement Award 2016, World Technology Network Award Finalist in Health and Medicine 2016, Outstanding Young Texas Exes Award 2015 (UT Austin Alumni Award), US National Academies’ Arab-American Frontiers of Sensors 2015 and 2016, DOW Chemical Sustainability Challenge Award 2012, etc. He has given more than 150 invited talks and has been highlighted extensively in the international media. His passion is to empower humanity with accessible and innovative electronic technologies.
    • Andrzej Napieralski
      Head of Department of Microelectronics and Computer Science
      Technical University of Lodz
      Poland
    • Tomislav Suligoj
      UNIVERSITY OF ZAGREB
      Faculty of Electrical Engineering and Computing
      Department of Electronics, Microelectronics, Computing and Intelligent Systems
      Unska 3
      Zagreb 10000
      Croatia
      Phone 1:
      ++385-1-6129898

      Fax:
      ++385-1-6129653
      Tomislav Suligoj was born in Zagreb, Croatia in 1972. He received the B.S., M.S. and Ph.D. degrees from the Faculty of Electrical Engineering and Computing, University of Zagreb, in 1995, 1998 and 2001, respectively.
      In 2000-2001 he was a Visiting Fulbright Scholar at the Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles (UCLA). From Spring 2002 to Summer 2003, he was a Visiting Scholar at the Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, where he conducted the research and taught. From Fall 2003, he has been with the Faculty of Electrical Engineering and Computing, University of Zagreb, where he is currently an Assistant Professor. He has been teaching the undergraduate and graduate courses in the field of Microelectronics, Semiconductor Fabrication, and IC Design. His research interests include the development of the novel high-performance Si/SiGe devices. His current research is focused on simulation, optimization, fabrication and electrical characterization of ultra small vertical and pillar-like MOSFETs and advanced silicon-based bipolar transistor structures. He has published more than 40 papers in technical journals and conferences in the area of electron devices and holds two patents.
      Dr. Suligoj received the ChancellorĂą
    • Daniel Tomaszewski
      Instytut Technologii Elektronowej (ITE)
      Al.Lotników 32/46
      Warsaw 02-668
      Poland
      Phone 1:
      +48 (22) 2793 200

      Fax:
      +48 (22) 2793 202
      D.Tomaszewski (M’2014) received M.Sc degree in electronics (spec. electronic technology) from Warsaw University of Technology in 1980, and Ph.D degree in electrical engineering (spec. solid-state device electronics) from Instytut Technologii Elektronowej, Warsaw in 1998.
  • Region 9 SRC Chair

    • Jacobus W. Swart
       - Senior Member
      FEEC/UNICAMP - State University of Campinas
      Av. Albert Einstein 400
      Campinas, Sao Paul 13.083-970
      Brazil
      Phone 1:
      +55 19 3746 6001

      Lecture Topics: MEMS, sensors, ISFET, CNT and graphene, Advanced CMOS processes
  • Region 9 SRC Vice Chairs

    • Arturo Escobosa
      CINESTAV-IPN
      Depto. de Ing. Electrica
      Av. IPN 2508
      Mexico DF 07360
      Mexico
      Phone 1:
      +52 55 5747 3375

      Fax:
      +52 55 5747 3978
    • Edmundo A. Gutiérrez-D.
       - Senior Member
      Solid State Phenomena; Emerging Technology and Devices
      INAOE
      L. E. Erro Nr. 1
      Tonantzintla, Puebla 72840
      Mexico
      Phone 1:
      +52 222 247 0517

      Fax:
      +52 222 247 0517
      Lecture Topics:  Magneto-quantum conductance effects in mosfets and nano-scaled semiconductor devices, low-temperature electronics, and magnetic sensors.

       Theoretical and experimental research on particle-wave duality conductance properties in semiconductor devices, DC and RF/Power device degradation and circuit reliability.

      Dr. Edmundo A. GutiĂ©rrez-D. got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. GutiĂ©rrez-D. is an IEEE senior member since 2008.
      Professor GutiĂ©rrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. GutiĂ©rrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).
    • Joao Martino
       - Senior Member
      University of Sao Paulo
      Laboratory of Integrated Systems
      Av. Prof. Luciano Gualberto, trav.3, n.158
      San Paulo 05508-010
      Brazil
      Phone 1:
      (11) 3091-5657

      Lecture Topics: 1) SOI MOSFET: Electrical Characterization and Modeling 2) Multiple-Gate Transistors: Device Physics and Characterization 3) Single Transistor Memory Cell: 1T-DRAM 4) Tunnel FET Transistors (triple-gate and nanowire structures) 5) Radiation effects on SOI devices 6) Field Effect Transistor: From MOSFET to Tunnel FET

      Bio
      Joao Antonio Martino received master (1984) and PhD (1988) degrees in microelectronics from University of Sao Paulo, Brazil. He was a postdoctoral researcher in silicon-on-insulator (SOI) devices and technology in Imec, Belgium. He is currently a full professor and the head of SOI group at University of Sao Paulo. His expertise is in electrical characterization, simulation and modeling of SOI devices in wide temperature range. He is also interested in the SOI-CMOS fabrication process, multiple-gate devices (FinFET), 1T-DRAM, Tunnel-FET and radiation effects. He has authored or coauthored of more than 400 technical journal papers and conference presentation and author/editor of 5 books. He is senior member and distinguished lecturer of the IEEE Electron Device Society (EDS). He is chair of IEEE/EDS South Brazil chapter and vice-chair of SRC IEEE/EDS R9.
    • German Yamhure
      Pontificia Universidad Javeriana
      Facultad de Ingeniería
      Departamento de Electrónica
      BogotaColombia
  • Region 10 SRC Chair

    • Ru Huang
       - MOS Devices and Technology
      Peking University
      Institute of Microelectronics
      Beijing 100871
      China
      Phone 1:
      86 10 6275 7761

      Fax:
      86 10 6275 1789 -7761
      Ru Huang (M’98–SM’06) received the B.S. (highest honors) and M.S. degrees in electronic engineering from Southeast University, Nanjing, China, in 1991 and 1994, respectively, and the Ph.D. degree in microelectronics from Peking University, Beijing, China, in 1997.
      In 1997, she joined the faculty of Peking University, where she is currently a Professor and the Head of the Department of Microelectronics. Since 2000, she has been the leader of several State Key Research Projects of China in device research and IC fabrication technology research, including major state basic research projects, 863 national projects, the key project from National Natural Science Foundation, as well as several collaborative projects with Samsung, Intel and Fujitsu Corporations. Her research interests include nano-scaled CMOS devices, nonvolatile memory devices and new devices for RF and harsh environment applications. She holds 21 granted patents, and has authored/co-authored 4 books and over 180 papers, including many conference invited papers. Dr. Huang is the winner of the National Science Fund for Distinguished Young Scholars and many other awards in China, including the National Youth Science Award, Science and Technology Progress Award from Ministry of Information Industry and Ministry of Education. She serves as a member of IEEE Electron Devices Society (EDS) AdCom and the associate chief editor of Science in China. She was the Technical Program Co-Chair of the 7th and 9th International Conference on Solid State and Integrated Circuit Technology (ICSICT 2004 and 2008), a Far East Committee Member of the 2004 International Solid State Circuits Conference (ISSCC), and committee members of many other international conferences and symposiums.
  • Region 10 SRC Vice Chairs

    • Albert Chin
       - Fellow
      Thin Film Transistors
      National Chiao Tung University
      Dept. of Electronics Engineering
      Hsinchu Taiwan
      Phone 1:
      +886-3573-1841

      Fax:
      +886-3572-4361
      Lecture Topics: high-Îș Si and Ge CMOS, high-Îș flash memory, ultra-low power green electronic devices, TFT, device-level 3D IC, Si RF devices

      Biography: Albert Chin received Ph.D. from University of Michigan, Ann Arbor, in 1989 and B.S. from National Tsing Hua University in 1982.
      He was with AT&T Bell Labs, General Electric E-Lab, and Texas Instruments SPDC. He has been a professor, vice executive officer of diamond project and deputy director of National Chiao Tung University, and a visiting Professor at National University of Singapore.
      He is a pioneer on low DC-power high-Îș CMOS, high-Îș Flash memory, high mobility Ge-On-Insulator, low AC-power 3D IC, high power asymmetric-MOSFET, Si fs/THz devices, and resonant-cavity photo-detector. He co-authored >500 papers and 7 “Highly Cited Papers” (top 1% citation). His high-Îș CMOS, GeOI, Flash memory, and RF devices were also cited by ITRS www.itrs.net
      Dr. Chin has served as Subcommittee Chair and Asian Arrangements Chair of IEDM Executive Committee, Editor of IEEE Electron Device Letters, Guest Editor & Editor-in-Chief of IEEE JEDS Special Issue on Advanced Technology for Ultra-Low Power Electronic Devices, and IEEE EDS Technical Committee Chairs on both Electronic Materials and Compound Semiconductor Devices & Circuits. He is an IEEE Fellow, Optical Society of America Fellow, and Asia-Pacific Academy of Materials Academician.
    • Anisul Haque
       - Compound Semiconductor Devices
      East West University
      Department of EEE, East West University, Aftabnagar
      43 Mohakhali C/A
      Dhaka, Bangladesh 1212
      India
      Phone 1:
      +880-171-5060000

      Prof. Anisul Haque is currently the Chairperson, Department of Electrical and Electronic Engineering at East West University. He has also served as the Dean, Faculty of Sciences and Engineering, East West University from December 2007 to December 2008. He received his PhD from Clarkson University, USA in 1996 and MS from Texas A & M University, USA in 1992. He also earned another MS from Bangladesh University of Engineering and Technology (BUET), Bangladesh in 1989 and BS from BUET in 1987. Prof. Haque started his academic career as a lecturer in the EEE Department, BUET. He was a professor in the same department until December 2005. He was a Visiting Researcher with the Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Japan, from 2002 to 2004. Prof. Haque has also been a Visiting Faculty Member with Clarkson University (1997, 1998 and 2001), University of Connecticut, Storrs (1999), and the Tokyo Institute of Technology (2005).
      Prof. Haque’s research interests are in physics, modeling, simulation, and characterization of nano-scale electronic and photonic devices. His current activities include modeling and characterization of MOSFETs on high-mobility substrates, compact modeling of MOSFETs and investigation of novel properties of strained GaInAsP low dimensional structures. He is also interested in engineering education. Prof. Haque has published around 40 papers in refereed international journals. Prof. Haque is a senior member of IEEE and is a life member of Bangladesh Physical Society. He is the founding Chair of IEEE Electron Devices Society, Bangladesh Chapter. Prof. Haque has been serving as a Distinguished Lecturer of IEEE Electron Devices Society since 2009. He is the recipient of the University Grants Commission Award 2006 for research in engineering and technology.
    • Manoj Saxena
      Deen Dayal Upadhyaya College
      University of Delhi
      Sector 3, Dwarka
      New Delhi 110078
      India
      Manoj Saxena is an Associate Professor in Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India. He received B.Sc. (with honors), M. Sc., and Ph.D. degrees from the University of Delhi in 1998, 2000, and 2006 respectively. He has authored or coauthored 210 technical papers in international journals and various international and national conferences. His current research interests are in the areas of analytical modeling, design, and simulation of Optically controlled MESFET/MOSFET, silicon-on-nothing, insulated-shallow-extension, grooved/concave-gate MOSFETs, cylindrical gate MOSFET and Tunnel FET. He is a reviewer to many journals including Solid State Electronics, Journal of Physics: D Applied Physics and IEEE TED and EDL. Manoj is a Senior Member of IEEE and also Member of Institute of Physics (UK), Institution of Engineering and Technology (UK), National Academy of Sciences India (NASI) and International Association of Engineers (Hong Kong). Currently, he is the Secretary of EDS Delhi Chapter. For his voluntary contribution, Manoj received the outstanding EDS Volunteer recognition from EDS Chapters in the region in 2012.

      Lecture Topics:
      Dielectric Pocket MOSFET: A Novel Device Architecture
      Embedded Insulator based Novel Nanoscaled Novel MOSFET Structures
      Tunnel Field Effect Transistor and its Application as Highly Sensitive and Fast Biosensor
      Modeling and Simulation of Tunnel Field Effect Transistor
      Dual Material Junctionless Double Gate Transistor for Analog and Digital Performance