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2015 EDL Golden Reviewers

The ability of the IEEE Electron Devices Letters to publish high quality papers has always been, and will continue to be, critically dependent upon the generosity, expertise, and dedication of the reviewers who volunteer their time for this purpose. The Editorial Board of EDL wish to gratefully acknowledge the individuals inside and out of the Electron Devices Society who have so selflessly contributed to this effort.

The IEEE Electron Device Letters List of Golden Reviewers for 2015
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Name Affiliation Country
Joël Abadie FEMTO-ST France
Christoph Adelmann IMEC Belgium
Sheel Aditya Nanyang Technological University Singapore
Praneet Adusumilli IBM United States
Valeri Afanas'ev KU Leuven Belgium
Aryan Afzalian TSMC Europe BV Belgium
Sujin Ahn Samsung Electronics Co. Ltd Korea
Akintunde Ibitayo (Tayo) Akinwande Massachusetts Institute of Technology United States
Deji Akinwande University of Texas at Austin United States
Ethem Erkan Aktakka University of Michigan, Ann Arbor United States
Ozgur Aktas Avogy Inc. United States
Mahmoud Al Ahmad United Arab Emirates University United Arab Emirates
Muhammad Alam Purdue University United States
Aleksandar Aleksov Intel Corp United States
Ashkar Ali Intel Corp United States
Cem Alper Ecole Polytechnique Fédérale de Lausanne Switzerland
Juan Alzate University of California at Los Angeles United States
Stefano Ambrogio Politecnico di Milano Italy
Ajith Amerasekera Texas Instruments Inc. United States
Faisal Amir National University of Sciences and Technology Pakistan
Salvatore Amoroso University of Glasgow United Kingdom
Kyuhwan An Qualcomm Technologies, Inc United States
Travis Anderson Naval Research Laboratory United States
Henrik Andersson Mid Sweden University Sweden
Takashi Ando IBM United States
Jonathan Andrews Naval Research Laboratory United States
Diing Shenp Ang Nanyang Technological University Singapore
Lay-Kee Ricky Ang Singapore University of Technology and Design Singapore
Costin Anghel Institut Superieur d'Electronique de Paris France
Benno Ankele Infineon Technologies Austria AG Austria
Anne-Johan Annema University of Twente Netherlands
Dimitri Antoniadis Massachusetts Institute of Technology United States
Marina Antoniou University of Cambridge United Kingdom
Marc Aoulaiche IMEC Belgium
Joerg Appenzeller Purdue University United States
Aaron Arehart Ohio State University United States
Hiroaki Arimura IMEC Belgium
Narain Arora Siprosys Inc United States
Vijay Arora Wilkes University United States
Antonio Arreghini IMEC Belgium
Tetsuya Asano Panasonic Corp. Japan
Massood Atashbar Western Michigan University United States
Karen Attenborough NXP Semiconductors Belgium
Jayasimha Atulasimha Virginia Commonwealth University United States
Yves Audet Ecole Polytechnique de Montreal Canada
Charles Augustine Intel Corp. United States
Brian Aull Massachusetts Institute of Technology United States
Chris Auth Intel Corp United States
Stephane Azzopardi University of Bordeaux France
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Giorgio Baccarani Università di Bologna Italy
Si-Young Bae Gwangju Institute of Science and Technology Korea
Chang-Ki Baek Pohang University of Science and Technology Korea
In-Gyu Baek Samsung Electronics Co. Ltd Korea
Jong-Min Baek Sungkyunkwan University Korea
Rock-Hyun Baek Sematech United States
Marise Bafleur LAAS-CNRS France
Anisullah Baig University of California at Davis United States
Kelly Baker Freescale Semiconductor Inc. United States
Benoit Bakeroot University of Ghent Belgium
Muhannad Bakir Georgia Institute of Technology United States
Mietek Bakowski Acreo Sweden
Simone Balatti Politecnico di Milano Italy
Francis Balestra Grenoble INP France
B. Jayant Baliga North Carolina State University United States
Supriyo Bandyopadhyay Virginia Commonwealth University United States
Koushik Banerjee Intel Corp United States
Sujit Banerjee Monolith Semiconductor United States
Kaustav Banerjee University of California at Santa Barbara United States
Sanjay Banerjee University of Texas at Austin United States
Sarunya Bangsaruntip IBM T.J. Watson IBM Research Center United States
Jesús Banqueri University of Granada Spain
Ruqiang Bao IBM United States
Douglas Barlage University of Alberta Canada
Andrew Barnes European Space Agency Netherlands
Nuria Barniol Universitat Autonoma de Barcelona Spain
Joaquim Barroso National Institute for Space Research Brazil
Dipanjan Basu Indian Institute of Technology Kanpur India
Bernhard Bayer University of Cambridge United Kingdom
Arnaud Beaumont University of Limoges France
Jeffrey Beck DRS Infrared Technologies United States
Sarah Bedair US Army Research Laboratory United States
Stephen Bedell IBM T.J. Watson Research Center United States
Behtash Behin-Aein GlobalFoundries United States
Salvatore Bellone University of Salerno Italy
Attilio Belmonte IMEC Belgium
Philippe Benech IMEP-LAHC France
Francis Benistant GlobalFoundries Singapore
Noureddine Bennis Military University of Technology Poland
Steven Bentley GlobalFoundries United States
Joshua Bergman Teledyne Scientific & Imaging United States
Cédric Bermond IMEP-LAHC, UMR CNRS 5130 France
Wim Besling NXP Semiconductors Netherlands
Giovanni Betti Beneventi Università di Bologna Italy
Anup Bhalla United Silicon Carbide Inc. United States
Sunil Bhave Cornell University United States
Krishna Bhuwalka Samsung Electronics Co. Ltd Korea
Ronald Birkhahn International Rectifier United States
Davide Bisi Università di Padova Italy
Jennifer Blain Christen Arizona State University United States
Pieter Blomme IMEC Belgium
Ilan Bloom Saifun Semiconductors Israel
Colombo Bolognesi ETH Zürich Switzerland
John Boos Naval Research Laboratory United States
Vicente Boria Technical University of Valencia Spain
John Borland J.O.B. Technologies United States
Gianluca Boselli Texas Instruments Inc. United States
Timothy Boykin University of Alabama at Huntsville United States
Berinder Brar Teledyne United States
Alain Bravaix ISEN-IM2NP France
Nicolas Breil IBM Microelectronics Division United States
Gheorghe Brezeanu Politehnica University of Bucharest Romania
Jonathan Brodsky Texas Instruments Inc. United States
Gary Bronner Rambus Inc United States
David Brown HRL Laboratories United States
Octavian Buiu Honeywell Romania SRL Romania
Joachim Burghartz Institute for Microelectronics Stuttgart Germany
Geoffrey Burr IBM Almaden Research Center United States
Erik Bury IMEC Belgium
Heinz Busta University of Illinois at Chicago United States
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Thomas Cabout CEA-LETI, MINATEC France
Carlo Cagli CEA Grenoble France
Xiaowu Cai ASTRI Hong Kong
Alessandro Calderoni Micron Semiconductor Italia s.r.l. Italy
Kristy Campbell Boise State University United States
Joe Campbell University of Virginia United States
Hongtao Cao Ningbo Institute of Material of Technology & Engineering China
Yu Cao HRL Laboratories United States
Roberto  Caputo University of Calabria Italy
Domenico Caputo Università di Roma "La Sapienza" Italy
Edwin Carlen University of Tsukuba Japan
Enrique Carrion University of Illinois Urbana-Champaign United States
Michael  Carroll Qorvo, Inc. United States
Andy Carter University of California at Santa Barbara United States
Helena Castán Lanaspa University of Valladolid Spain
Umberto Celano IMEC Belgium
Didier Celi STMicroelectronics France
Antonio Cerdeira CINVESTAV Mexico
Ho-Young Cha Hongik University Korea
Kelson Chabak Air Force Research Laboratory United States
Yang Chai Hong Kong Polytechnic University Hong Kong
Mansun Chan Hong Kong University of Science and Technology Hong Kong
Chao Chang Xi’an Jiaotong University China
Liann-Be Chang Chang Gung University Taiwan
Yao-Wen Chang Macronix International Co. Ltd. Taiwan
Sheng-Po Chang National Cheng Kung University Taiwan
Edward Yi Chang National Chiao Tung University Taiwan
Ting-Chang Chang National Sun Yat-Sen University Taiwan
Meng-Fan Chang National Tsing Hua University Taiwan
Wen-Teng Chang National University of Kaohsiung Taiwan
Hsueh-Rong Chang International Rectifier United States
Tien-Sheng Chao National Chiao Tung University Taiwan
Pane-Chane Chao BAE Systems United States
Adrian Chasin IMEC Belgium
Shih-Hung Chen IMEC Belgium
Yang-Yin Chen IMEC/SanDisk Belgium
Chih-Hung Chen McMaster University Canada
Kevin Chen Hong Kong University of Science and Technology Hong Kong
Jiezhi Chen Toshiba Corporation Semiconductor Company Japan
Hsin-Li Chen E Ink Holdings Inc. Taiwan
Yusheng Chen Industrial Technology Research Institute Taiwan
Eugene Chen Industrials Technology Research Institute Taiwan
Kuan-Neng Chen National Chiao Tung University Taiwan
Chih-ming Chen National Chung Hsing University Taiwan
Wen-Ray Chen National Formosa University Taiwan
Hsin Chen National Tsing Hwa University Taiwan
Hong-Yu Chen SanDisk Corporation United States
Edward  Chen Taiwan Semiconductor Manufacturing Company United States
Yenhao Chen University of California at Berkeley United States
Xinhong Cheng State Key Laboratory of Functional Materials for Informatics China
Chin-Lung Cheng National Formosa University Taiwan
I-Chun Cheng National Taiwan University Taiwan
Keh-Yung (Norman) Cheng National Tsing Hua University Taiwan
Xiang Cheng University of Cambridge United Kingdom
Xu Cheng Freescale Semiconductor Inc. United States
Kuan Yew Cheong Universiti Sains Malaysia Malaysia
Karim Cherkaoui Tyndall National Institute Ireland
Winston Chern Massachusetts Institute of Technology United States
Pascal Chevalier STMicroelectronics France
Liang-Chy Chien Kent State University United States
Hockchun Chin Samsung Electronics Co. Ltd Korea
Hsien-Chin Chiu Chang Gung University Taiwan
Hsin-Ying Chiu University of Kansas United States
Moonju Cho IMEC Belgium
Sung Haeng Cho ETRI Korea
Byung-Jin Cho KAIST Korea
Won-Ju Cho Kwangwoon University Korea
Hyung Koun Cho Sungkyunkwan University Korea
Mann-Ho Cho Yonsei University Korea
Kyeongjae Cho University of Texas at Dallas United States
Sri Harsha Choday Purdue University United States
Anthony H.W. Choi University of Hong Kong Hong Kong
Hyejung Choi HYNIX Semiconductor Korea
Woong Choi Kookmin University Korea
Sung-Jin Choi Kookmin University Korea
Jun Hee Choi Samsung Advanced Institute of Technology Korea
Saurabh Chopra Applied Materials United States
Kun-mo Chu Samsung Advanced Institute of Technology Korea
Charles Chu Altera Corporation United States
Ken Chu BAE Systems United States
Rongming Chu HRL Laboratories United States
Yu-Lun Chueh National Tsing Hua University Taiwan
Yueh-Ting Chung National Chiao Tung University Taiwan
Young Chung Freescale Semiconductor Inc. United States
David Clark Raytheon Systems Limited United Kingdom
Raphael Clerc IMEP/ENSERG France
Sergiu Clima IMEC Belgium
Brian Cobb Holst Centre Netherlands
Bishnu Cogoi AXTEC Consulting Group United States
Lorenzo Colace University Roma Tre Italy
Matthew Cole University of Cambridge United Kingdom
Nadine Collaert IMEC Belgium
Timothy Constandinou Imperial College London United Kingdom
Adam Conway Lawrence Livermore National Laboratory United States
Francesco Conzatti Università degli Studi di Udine Italy
Tim Coombs University of Cambridge United Kingdom
Yvon Cordier CNRS-CRHEA France
James Covington University of Warwick United Kingdom
Wayne Cranton Nottingham Trent University United Kingdom
M. (Adriana) Creatore Eindhoven University of Technology Netherlands
Sorin Cristoloveanu INPG France
Giovanni Crupi University of Messina Italy
Tie Jun Cui Southeast University China
Qiang Cui University of Central Florida United States
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Nilay Dağtekin Ecole Polytechnique Fédérale de Lausanne Switzerland
Ravinder Dahiya University of Glasgow United Kingdom
Robin Dahlback Chalmers University of Technology Sweden
Benjamin Damilano CNRS France
T. Giang Dang University of Canterbury New Zealand
Jürgen Daniel Teclination Consulting United States
Ali Darwish American University in Cairo Egypt
Saptarshi Das Argonne National Laboratory United States
Amitava DasGupta Indian Institute of Technology Madras India
Sansaptak Dasgupta Intel Corp United States
Suman Datta Pennsylvania State University United States
Alwin Daus ETH Zürich Switzerland
John David University of Sheffield United Kingdom
Maarten de Boer Carnegie Mellon University United States
Jean-Claude De Jaeger IEMN France
Michele De Marchi Ecole Polytechnique Fédérale de Lausanne Switzerland
Jesus del Alamo Massachusetts Institute of Technology United States
Simon Deleonibus CEA LETI France
Wanling Deng College of Information Science and Technology China
Dan Denninghoff Teledyne Scientific & Imaging United States
Shweta Deora Sematech United States
Joff Derluyn EpiGaN Belgium
Theeradetch Detchprohm Georgia Institute of Technology United States
Gilbert Dewey Intel Corp. United States
Anil Dey Lund University Sweden
Sarit Dhar Auburn University United States
Charalabos Dimitriadis Aristotle University of Thessaloniki Greece
Sima Dimitrijev Giffith University Australia
Shi-Jin Ding Fudan University China
José  Diniz Universidade Estadual de Campinas Brazil
Donald Disney GlobalFoundries Singapore
Philippe Dollfus Universite Paris Sud / CNRS France
Gary Dolny Fairchild Semiconductor United States
Gerben Doornbos TSMC Europe BV Belgium
Brian Downey US Naval Reseach Laboratory United States
Francesco Driussi Università degli Studi di Udine Italy
Chao-Hai Du Institute of Electronics China
Wenfang Du University of Electronic Science and Technology of China China
Pei-Ying Du Macronix International Co. Ltd. Taiwan
Mao-Hua Du Oak Ridge National Laboratory United States
Wei Du University of Arkansas United States
Baoxing Duan Xidian University China
Davianne Duarte University of Texas at Austin United States
Martin Dvorak Agilent Technologies, Inc. United States
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Alexandra Efimovskaya University of California at Irvine United States
Heribert Eisele University of Leeds United Kingdom
Ahmed Elasser GE Global Research Center United States
Nabil El-Hinnawy Northrop Grumman Electronic Systems United States
Kazuhiko Endo AIST Japan
Geert Eneman IMEC Belgium
Olof Engstrom Chalmers University of Technology Sweden
Milton Ericson Oak Ridge National Laboratory United States
David Esseni Università degli Studi di Udine Italy
Paul Evans University of Wisconsin United States
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Adrian Faigon CONICET-UBA Argentina
Guojia Fang Wuhan University China
Andrea Fantini IMEC Belgium
Morteza Fathipour University of Tehran Iran
Chin Seng Fatt Advanced Technology Training Centre Malaysia
Patrick Fay University of Notre Dame United States
Jonathan Felbinger Booz Allen Hamilton United States
Xue Feng Institute of Solids Mechanics China
Qian Feng Xidian University China
Philip Feng Case Western Reserve University United States
Jia Feng Oracle United States
Philippe Ferrari IMEP-LAHC France
David Ferry Arizona State University United States
Gianluca Fiori Università di Pisa Italy
Massimo Fischetti University of Texas at Dallas United States
Denis Flandre Université Catholique de Louvain Belgium
Dan Fleetwood Vanderbilt University United States
Fredrik Forsberg KTH Royal Institute of Technology Sweden
Guglielmo Fortunato CNR-IMM Italy
Elvira Fortunato New University of Lisbon Portugal
Eric Fossum Dartmouth College United States
Jerry Fossum University of Florida United States
Jacopo Franco IMEC Belgium
David Frank IBM T.J. Watson Research Center United States
Lothar Frey University of Erlangen-Nuremberg Germany
Peter Friedrichs Infineon Technologies AG Germany
Fred Yue Fu Crosslight Software,Inc. Canada
Yongqing Fu University of the West of Scotland United Kingdom
Gonzalo Fuentes Iriarte Instituto de Sistemas Optoelectronicos y Microtecnologia Spain
Hiroki Fujii Renesas Electronics Corporation Japan
Jun Fujiki Toshiba Corporation Semiconductor Company Japan
Naoto Fujishima Fuji Electric Germany
Yukio Fukuda Tokyo University of Science Japan
Koichi Fukuda Toshiba Corporation Semiconductor Company Japan
Takafumi Fukushima Tohoku University Japan
Andy Fung Jet Propulsion Lab. United States
Arnaud Furnémont IMEC Belgium
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Alessandro Gabrielli Università di Bologna Italy
Michael Gaitan National Institute of Standards and Technology United States
Philippe Galy STmicroelectronics France
Jeff Gambino IBM Microelectronics Division United States
Chee-Lip Gan Nanyang Technological University Singapore
Kartik Ganapathi Intermolecular United States
Swaroop Ganguly Indian Institute of Technology Bombay India
Satyaki Ganguly Intel Corp United States
Samiran Ganguly Purdue University United States
Bin Gao Peking University China
Qun Gao IBM United States
Antonio Garcia-Loureiro Universidad de Santiago de Compostela Spain
Donald Gardner Intel Corp United States
Xavier Garros CEA Grenoble France
D. Kurt Gaskill U.S. Naval Research Laboratory United States
Ning Ge Hewlett Packard United States
Jan Genoe IMEC Belgium
Rooz Ghaffari MC10 Inc. United States
Andrea Ghetti Micron Semiconductor Italia s.r.l. Italy
Gérard Ghibaudo IMEP-LAHC France
Nayereh Ghobadi Univeristy of Tehran Iran
Bahniman Ghosh University of Texas United States
Filippo Giannazzo CNR-IMM Italy
Paolo Giannozzi Università degli Studi di Udine Italy
Renaud Gillon ON Semiconductor Belgium
Farzan Gity Tyndall National Institute Ireland
Gino Giusi University of Messina Italy
Mikhail Yu. Glyavin Institute of Applied Physics Russia
Elena Gnani Università di Bologna Italy
Antonio Gnudi Università di Bologna Italy
Akira Goda Micron Technology, Inc. United States
Paragjyoti Gogoi Sibsagar College India
Xiao Gong National University of Singapore Singapore
xun  gong University of Central Florida United States
Songbin Gong University of Illinois United States
Stephen Goodnick Arizona State University United States
Harald Gossner Intel Corp. Germany
Ludovic Goux IMEC Belgium
Bogdan Govoreanu IMEC Belgium
Vera Gradisnik University of Rijeka Croatia
Tibor Grasser Technical University of Vienna Austria
Bruce Green Freescale Semiconductor Inc. United States
Alessio Griffoni OSRAM Italy
Patrick Grillot Philips Lumileds Lighting United States
Alessandro Grossi University of Ferrara Italy
Jiangjiang Gu Intel Corp United States
Ximeng Guan IBM United States
Weihua Guan Yale University United States
Xiaojun Guo Shanghai Jiao Tong University China
Congzhong Guo Carnegie Mellon University United States
Jing Guo University of Florida United States
Rajesh Gupta Micron Semiconductor India Pvt. Ltd. India
Sumeet Kumar Gupta Pennsylvania State University United States
Chaitanya Gupta Stanford University United States
Shashank Gupta Stanford University United States
Geetak Gupta University of California at Santa Barbara United States
Jeremy Guy CEA LETI France
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Tae-Jun Ha University of Texas at Austin United States
Wilfried Haensch IBM T.J. Watson Research Center United States
Kimimori Hamada Toyota Motor Corporation Japan
Bruce Hamilton University of Manchester United Kingdom
Shu-Jen Han IBM T.J. Watson Research Center United States
Masami Hane Renesas Electronics Corporation Japan
Naoki Hara Fujitsu Laboratories Ltd. Japan
Akito Hara Tohoku Gakuin University Japan
Sayed Hasan Intel Corp United States
Pouya Hashemi IBM Corporation United States
Nikolaos Hastas Aristotle University of Thessaloniki Greece
Yoshihiro Hayashi Renesas Electronics Corporation Japan
Jin He Peking University China
Hongyu He Peking University China
Wenlong He University of Strathclyde United Kingdom
Huanyu He Rensselear Polytechinc Institute United States
Michael Heimlich Macquarie University Australia
Bahman Hekmatshoar IBM T.J. Watson Research Center United States
Per-Erik Hellstrom KTH Royal Institute of Technology Sweden
Robert Henderson University of Edinburgh United Kingdom
John Hennessy California Institute of Technology United States
Haldane Henry Qorvo, Inc. United States
Yeon-Cheol Heo Samsung Korea
Gregory Herman Oregon State University United States
Florian  Herrault HRL laboratories United States
Masataka Higashiwaki National Institute of Information and Communications Technology Japan
Gage Hills Stanford University United States
Kazuyuki Hirama NTT Basic Research Laboratories Japan
Masato Hiramatsu Toshiba Mobile Display Co., Ltd. Japan
Toshiro Hiramoto University of Tokyo Japan
Masanobu Hiroki NTT Photonics laboratories Japan
Hans Hjelmgren Chalmers University of Technology Sweden
ChiaHua Ho National Nano Device Laboratories Taiwan
Chih-Hsiang Ho Purdue University United States
Karl Hobart Naval Research Laboratory United States
Anthony Holland RMIT University Australia
Martin Holland TSMC Europe R&D Belgium
Wen-Chiang Hong Rutgers University United States
Terence Hook IBM Corporation United States
Naoto Horiguchi IMEC Belgium
Masahiro Horita Nara Institute of Science and Technology Japan
Ray-Hua Horng National Chung Hsing University Taiwan
David Horsley University of California at Davis United States
Hideo Hosono Tokyo Institute of Technology Japan
QingRun Hou Tsinghua University China
Tuo-Hung Hou National Chiao Tung University Taiwan
Kun Hou SanDisk Corporation United States
Peter Houston University of Sheffield United Kingdom
Roger Howe Stanford University United States
Ken Hsieh Macronix International Co. Ltd. Taiwan
Min-Che Hsieh National Tsing Hua University Taiwan
Alice Pei-Shan Hsieh University of Cambridge United Kingdom
Tzu-Hsuan (Bruce) Hsu Macronix International Co. Ltd. Taiwan
Hsiao-Hsuan Hsu National Chiao Tung University Taiwan
Heng-Ming Hsu National Chung Hsing University Taiwan
Yung-Yu Hsu MC10 Inc. United States
Peng Huang Institute of Microelectronics China
Huihui Huang Shenzhen University China
Shao-Chang Huang National Chiao Tung University Taiwan
JianJang Huang National Taiwan University Taiwan
Chih-Fang Huang National Tsing Hua University Taiwan
Jidong Huang GlobalFoundries United States
Jim Huang Hewlett Packard United States
Zhihong Huang Intel Corp United States
Alex Huang North Carolina State University United States
Jian Huang University of California at Riverside United States
Yu Huang University of Los Angelous United States
Raymond Hueting University of Twente Netherlands
Brett Hull Cree, Inc. United States
Muhammad Hussain King Abdullah University of Science and Technology Saudi Arabia
Chi-Sun Hwang ETRI Korea
Hyunsang Hwang Pohang University of Science and Technology Korea
Injun Hwang Samsung Electronics Co. Ltd Korea
Cheol Seong Hwang Seoul National University Korea
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Giuseppe Iannaccone Università di Pisa Italy
Daniele Ielmini Politecnico di Milano Italy
Kazuhiro Ikeda Sumitomo Electric Industries, Ltd. Japan
Hesameddin Ilatikhameneh Purdue University United States
Ki-Sik Im Kyungpook National University Korea
Eugene Imhoff Naval Research Laboratory United States
Sven Ingebrandt University of Applied Sciences Kaiserslautern Germany
Benjamin Iñiguez Universitat Rovira i Virgili Spain
Naoya Inoue NEC Electronics Japan
Dimitris P. Ioannou IBM Microelect United States
Adrian Mihai Ionescu Ecole Polytechnique Fédérale de Lausanne Switzerland
Toshifumi Irisawa MIRAI-ASET Japan
Hidetoshi Ishida Matsushita Electric Industrial Co. Ltd Japan
Ryoichi Ishihara Delft University of Technology Netherlands
Hiroshi Ishiwara Tokyo Institute of Technology Japan
Ahmad Islam Wright-Patterson Air Force Base United States
Damir Islamov Rzhanov Institute of Semiconductor Physics Russia
Kenchi Ito Tohoku University Japan
Tony Ivanov US Army Research Laboratory United States
Agnieszka Iwan Electrotechnical Institute Poland
Takayuki Iwasaki Tokyo Institute of Technology Japan
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Alfonso Torres Jacome INAOE Mexico
Vibhor Jain IBM United States
Mansoor Jalil National University of Singapore Singapore
John Jameson Adesto Technologies United States
Doyoung Jang IMEC Belgium
Jae-Hyung Jang Gwangju Institute of Science and Technology Korea
Jin Jang Kyung Hee University Korea
Michael Jank Fraunhofer Institute for Integrated Systems and Device Technology IISB Germany
Farzan Jazaeri Ecole Polytechnique Fédérale de Lausanne Switzerland
Debdeep Jena University of Notre Dame United States
Snezana  Jenei Infineon Technologies AG Germany
Erik Jeng Chung Yuan Christian University Taiwan
Sanghun Jeon Korea University Korea
Jaeseok Jeon Rutgers University United States
Jaewook Jeong Daegu Gyeongbuk Institute of Science & Technology Korea
Jae Kyeong Jeong Inha University Korea
In-Hwan Ji Samsung Mobile Display Korea
Zhigang Ji Liverpool John Moores University United Kingdom
Shuwen Jiang University of Electronic Science China
Anquan Jiang Fudan University China
Zizhen Jiang Stanford University United States
Tengfei Jiang University of Texas at Austin United States
Chongqing Jiao North China Electric Power University China
David Jiménez Universitat Autònoma de Barcelona Spain
Jungwoo Joh Texas Instruments Inc. United States
Jeffrey Johnson IBM United States
Kenneth Jones Army Research Lab-SEDD United States
Hannah Joyce Cambridge University United Kingdom
Colin Joye Naval Research Laboratory United States
Martin Jun University of Victoria Canada
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Tetsu Kachi Toyota Central R&D Labs., Inc. Japan
Kuniyuki Kakushima Tokyo Institute of Technology Japan
Aditya Kalavagunta COMSOL Inc. United States
Pankaj Kalra SanDisk Corporation United States
Deepak Kamalanathan Adesto Technologies United States
Jinfeng Kang Peking University China
In Man Kang Kyungpook National University Korea
Daehwan Kang Samsung Electronics Co. Ltd. Korea
Teruo Kanki Osaka University Japan
Kuo-Hsing Kao National Cheng Kung University Taiwan
Po-Ching Kao National Chiayi University Taiwan
Tzu-Cheng Kao National Tsing Hua University Taiwan
Robert Kaplar Sandia National Laboratories United States
Karan Karan Bhatia Texas Instruments Inc. United States
Karim Karim University of Waterloo Canada
Fouad Karouta Australian National University Australia
Ilya Karpov Intel Corp United States
Irmantas Kašalynas Center for Physical Sciences and Technology Lithuania
Avinash Kashyap GE Global Research Center United States
Yoshimine Kato Kyushu University Japan
Brajesh Kaushik Indian Institute of Technology Roorkee India
Omid Kavehei RMIT University Australia
Takamasa Kawanago Tokyo Institute of Technology Japan
Hiroshi Kawarada Waseda University Japan
Ahmet Kaya Turgut Ozal University Turkey
Thomas Kenny Stanford University United States
Ming-Dou Ker National Chiao Tung University Taiwan
Andreas Kerber GlobalFoundries United States
Vishal Kesari Microwave Tube Research & Development Centre India
Ali Khakifirooz Spansion Inc. United States
Pedram Khalili Amiri University of California at Los Angeles United States
Asif Khan University of California at Berkeley United States
Mohammad Khayer Intel Corp United States
Alexander Khitun University of California at Riverside United States
Toshihide Kikkawa Transphorm Japan, Inc. Japan
Hee-Dong Kim Sejong University Korea
Dong Myong Kim Kookmin University Korea
Dae Hwan Kim Kookmin University Korea
Moonil Kim Korea University Korea
Sunkook Kim Kyung Hee University Korea
Dong-Won Kim Samsung Korea
Deok-kee Kim Sejong University Korea
Hyeong Joon Kim Seoul National University Korea
Do Hwan Kim Soongsil University Korea
Kyung Rok Kim Ulsan National Institute of Science and Technology Korea
Hoon Kim GlobalFoundries United States
Jeehwan Kim Massachusetts Institute of Technology United States
Jongyeon Kim Univeristy of Minnesota United States
Jiyoung Kim University of Texas at Dallas United States
Hanseup Kim University of Utah United States
Tsunenobu Kimoto Kyoto University Japan
Mutsumi Kimura Ryukoku University Japan
Ya-Chin King National Tsing Hwa University Taiwan
Sean King Intel Corp United States
Thomas Kinkeldei ETH Zürich Switzerland
Wiley Kirk University of Texas at Dallas United States
Howard Kirsch Micron Technology, Inc. United States
Masatoshi Kitamura Kobe University Japan
Isik Kizilyalli Avogy Inc United States
Hagen Klauk Max Planck Institute for Solid State Research Germany
Gerhard Klimeck Purdue University United States
Alexander Kloes Technische Hochschule Mittelhessen Germany
Johan Klootwijk Philips Research Europe Netherlands
Andrew Knights McMaster University Canada
Dietmar Knipp Jacobs University Bremen Germany
Lars Knoll Forschungszentrum Julich GmbH Germany
Masaharu Kobayashi University of Tokyo Japan
Andrew Koehler U.S. Naval Research Laboratory United States
Wee Shing Koh A*STAR Institute of High Performance Computing Singapore
Erhard Kohn University of Ulm Germany
Andrei Konstantinov Fairchild Semiconductor Sweden
Pawel Kopyt Warsaw Institute of Technology Poland
Ryoji Kosugi AIST Japan
Siyuranga Koswatta IBM Corporation United States
Murali Kota IBM India
Roza Kotlyar Intel Corp United States
Taejoon Kouh Kookmin University Korea
John Kouvetakis Arizona State University United States
Alexey Kovalgin University of Twente Netherlands
Elizabeth Kowalski Massachusetts Institute of Technology United States
Masato Koyama Toshiba Corporation Semiconductor Company Japan
Michael Kozicki Arizona State University United States
Yakov Krasik Technion - Israel Institute of Technology Israel
Thomas Krause Royal Military College of Canada Canada
Viktor Krozer Goethe University of Frankfurt am Main Germany
Shaw-Hung Ku Macronix International Co. Ltd. Taiwan
Santosh Kulkarni Tyndall National Institute Ireland
Subindu Kumar Indian School of Mines University India
M. Jagadesh Kumar Indian Institute of Technology India
Hideya Kumomi Tokyo Institute of Technology Japan
Cheng Kuo National Chiao Tung University Taiwan
Masaaki Kuzuhara University of Fukui Japan
Shahar Kvatinsky Technion - Israel Institute of Technology Israel
Hoi-Sing Kwok Hong Kong University of Science and Technology Hong Kong
Hyuck-In Kwon Chung-Ang University Korea
Oh-Kyong Kwon Hanyang University Korea
Jang-Yeon Kwon Yonsei University Korea
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Nathalie Labat University of Bordeaux France
Andrea Lacaita Politecnico di Milano Italy
Thierry Lacrevaz Université de Savoie France
Wei-Chih Lai National Cheng Kung University Taiwan
Patrizia Lamberti University of Salerno Italy
Linfeng Lan South China University of Technology China
Luca Larcher Università di Modena e Reggio Emilia Italy
Guilhem Larrieu LAAS-CNRS France
Kei May Lau Hong Kong University of Science and Technology Hong Kong
Christian Lavoie IBM T.J. Watson Research Center United States
Jacob Leach Kyma Technologies Inc. United States
David Leadley University of Warwick United Kingdom
Kin Kiong Lee Japan Atomic Energy Agency Japan
Kangwook Lee Tohoku University Japan
Choong Hyun Lee University of Tokyo Japan
Kimoon Lee Kunsan National University Korea
Jiyoul Lee Pukyong National University Korea
Byoung Hun Lee Gwangju Instititue of Science and Technology Korea
Jung-Hee Lee Kyungpook National University Korea
Jeong-Soo Lee Pohang University of Science and Technology Korea
Tae-Woo Lee Pohang University of Science and Technology Korea
Jiyoul Lee Pukyong National University Korea
Jae Woo Lee Samsung Electronics Co. Ltd Korea
Jae-Duk Lee Samsung Electronics Co. Ltd Korea
Jae-Kyu Lee Samsung Electronics Co. Ltd Korea
Jae-Hoon Lee Samsung Electronics Co. Ltd Korea
Jong-Ho Lee Seoul National University Korea
Sin-Doo Lee Seoul National University Korea
Moon-Que Lee University of Seoul Korea
Myung-Jae Lee Yonsei University Korea
Chengkuo Lee National University of Singapore Singapore
Hengyuan Lee Industrial Technology Research Institute Taiwan
Dai-Ying Lee Macronix International Co. Ltd. Taiwan
Sungsik Lee University of Cambridge United Kingdom
Jian-Hsing Lee GlobalFoundries United States
Sungjae Lee IBM Microelectronics United States
Rinus Lee Sematech United States
Dok Won Lee Stanford University United States
Ji-Ung Lee SUNY Polytechnic Institute United States
Dong Seup Lee Texas Instruments Inc. United States
Sanghoon Lee University of California at Santa Barbara United States
Kyusang Lee University of Michigan United States
Bernard Legrand LAAS-CNRS France
Bernardo Leite Federal University of Parana Brazil
Max Lemme University of Siegen Germany
Ted Letavic IBM United States
Gregory Leung University of California at Los Angeles United States
Arnulf Leuther IAF Fraunhofer Germany
Ling Li insititute of microelectronics China
Haitong Li Peking University China
Yiming Li National Chiao Tung University Taiwan
Sheng-Shian Li National Tsing Hua University Taiwan
Zhi Li Crossbar Inc. United States
You Li IBM Corporation United States
Liwei Li Kent State University United States
Zhongda Li Rensselaer Polytechnic Institute United States
Zuanyi Li Stanford University United States
Hong Li University of California at Santa Barbara United States
Gengchiau Liang National University of Singapore Singapore
Yung Liang National University of Singapore Singapore
Ming-Han Liao National Taiwan University Taiwan
Jason T.S. Liao Intel Corp United States
Cheng-Li Lin Feng Chia University Taiwan
Yu-Yu Lin Macronix International Co. Ltd. Taiwan
Chih-Lung Lin National Cheng Kung University Taiwan
Chien-Chung Lin National Chiao Tung University Taiwan
Chun-Chieh Lin National Dong Hwa University Taiwan
Jyi-Tsong Lin National Sun Yat-Sen University Taiwan
Ching Fuh Lin National Taiwan University Taiwan
Chrong-Jung Lin National Tsing Hua University Taiwan
Chiung-Wei Lin Tatung University Taiwan
Yung-Chen Lin Los Alamos National Laboratory United States
Jianqiang Lin Massachusetts Institute of Technology United States
Lei Lin SanDisk Corporation United States
Chih-Ming Lin University of California at Berkeley United States
Yang Lin University of California at Berkeley United States
Erik Lind Lund University Sweden
Loren Linholm United States
Eike Linn RWTH Aachen University Germany
Juin Liou University of Central Florida United States
Ming Liu Institute of Microelectronics China
Lifeng Liu Peking University China
Zhao Jun Liu Hong Kong University of Science and Technology Hong Kong
Po-Tsun Liu National Chiao Tung University Taiwan
Yu-Heng Liu National Chiao Tung University Taiwan
Chih-Yi Liu National Kaohsiung University of Applied Sciences Taiwan
Chee-Wee Liu National Taiwan University Taiwan
Gui Liu Illinois Institute of Technology United States
Huichu Liu Intel Corp United States
Han Liu Intel Corp United States
Xiaoguang Liu University of California at Davis United States
Wei Liu University of California at Santa Barbara United States
Bo Liu University of Florida United States
Guo-Qiang (Patrick) Lo Institute of Microelectronics Singapore
Roger Lo Macronix International Co. Ltd. Taiwan
Andrew Lohn Sandia National Laboratories United States
Shibing Long Chinese Academy of Sciences China
Paolo Lorenzi Università di Roma "La Sapienza" Italy
Liang Lou Institute of Microelectronics Singapore
Wen-Shiung Lour National Taiwan Ocean University Taiwan
Tao-Cheng Lu Macronix International Co. Ltd. Taiwan
Zhichao Lu GlobalFoundries United States
Ning Lu IBM United States
Bin Lu Massachusetts Institute of Technology United States
JengPing Lu Palo Alto Reseach Center United States
Yeqing Lu Synopsys Inc. United States
Yipeng Lu University of California at Davis United States
Xuejun Lu University of Massachusetts Lowell United States
Wei Lu University of Michigan United States
Stepan Lucyszyn Imperial College London United Kingdom
Mathieu Luisier ETH Zürich Switzerland
Xiao Rong Luo University of Electronic Science and Technology of China China
Hangbing Lv Institute of Microelectronics China
Jian Lv University of Electronic Science and Technology of China China
Steve Lytle Texas Instruments Inc. United States
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Chenyue Ma Institute of Microelectronics China
Hanbin Ma University of Cambridge United Kingdom
Himanshu Madan Pennsylvania State University United States
Shankar N Ekkanath Madathil University of Sheffield United Kingdom
Toshihiko Maemoto Osaka Institute of Technology Japan
Wan Joo Maeng University of Wisconsin-Madison United States
Santanu Mahapatra Indian Institute of Science India
Shaban Mahmoud Aswan University Egypt
Siddheswar Maikap Chang Gung University Taiwan
Pasquale Maiorano Università di Bologna Italy
Sylvain Maitrejean CEA LETI France
Prashant Majhi Intel Corp United States
Duo Mao Micron Technology, Inc United States
Emmanuel Marcault LAAS-CNRS France
Matthew Marinella Sandia National Laboratories United States
Ognian Marinov McMaster University Canada
Luigi Mariucci CNR-IMM Italy
Koen Martens IMEC Belgium
Frederic Martinez University of Montpellier II France
Philippe Martin-Gonthier ISAE France
Maria Martin-Martinez Universidad de Salamanca Spain
Rodrigo Martins New University of Lisbon Portugal
Kanamura Masahito Transphorm Japan, Inc. Japan
Carlos Mastrangelo University of Utah United States
Javier Mateos Universidad de Salamanca Spain
Mallory Mativenga Kyung Hee University Korea
Kevin Matocha Monolith Semiconductor Inc United States
Takashi Matsukawa AIST Japan
Paolo Mattavelli Università di Padova Italy
Aurelio Mauri Micron Semiconductor Italia s.r.l. Italy
Sudip Mazumder University of Illinois at Chicago United States
Colin McAndrew Freescale Semiconductor Inc. United States
Farid Medjdoub IEMN - CSAM France
Emad Mehdizadeh University of Texas at Dallas United States
Adnan Mehonic University College London United Kingdom
Gerry Mei Northrop Grumman Corporation United States
Ping Mei Palo Alto Research Center United States
Gaudenzio Meneghesso Università di Padova Italy
Mateo  Meneghini Università di Padova Italy
Matteo Meneghini Università di Padova Italy
José Menéndez Arizona State Univeristy United States
Chin-Chun Meng National Chaio Tung University Taiwan
Stephan Menzel Forschungszentrum Julich GmbH Germany
Carmine Miccoli Politecnico di Milano Italy
Antonino Miceli Argonne National Laboratory United States
Neal Mielke Intel Corp United States
Shinji Migita AIST Japan
Thomas Mikolajick NaMLab GmbH Germany
Miroslav Mikolasek Slovak University of Technology Slovakia
Liviu Militaru INSA Lyon France
William Milne University of Cambridge United Kingdom
Hidenori Mimura Shizuoka University Japan
Tadaharu Minato Mitsubishi Electric Corp Japan
Mauro Mineo e2v United Kingdom
Umesh Mishra University of California at Santa Barbara United States
Mohamed Missous University of Manchester United Kingdom
Jérôme Mitard IMEC Belgium
Yasuyuki Miyamoto Tokyo Institute of Technology Japan
Takashi Mizutani Nagoya University Japan
Alberto Modelli STMicroelectronics Italy
Jay Mody GlobalFoundries United States
Dheeraj Mohata RF Micro Devices, Inc. United States
Joel Molina INAOE Mexico
Christian Monzio Compagnoni Politecnico di Milano Italy
Dong-Il Moon KAIST Korea
Hanul Moon KAIST Korea
Jeong Moon HRL Laboratories United States
Yi-Shien Mor Taiwan Semiconductor Manufacturing Company Taiwan
Frédéric Morancho LAAS-CNRS France
Hervé Morel Université de Lyon, INSA de Lyon France
Mario Moreno INAOE Mexico
Mutsuhiro Mori Hitachi Ltd. Japan
Nobuya Mori Osaka University Japan
Dallas Morisette Purdue University United States
Hadis Morkoc Virginia Commonwealth University United States
Amir Mortazawi University of Michigan United States
Michael Moseley Sandia National Laboratories United States
Kirsten Moselund IBM Research GmBH Switzerland
Nurunnahar Mou University of Utah United States
Thomas Muller Vienna University of Technology Austria
Robert Muller Belgium
Alexandru Muller IMT Bucharest Romania
Jae-Kyoung Mun ETRI Korea
Niko Münzenrieder University of Sussex United Kingdom
Roberto Myers Ohio State University United States
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Toshihide Nabatame National Institute for Materials Science Japan
Azad Naeemi Georgia Institute of Technology United States
Kianoush Naeli Hewlett Packard United States
Manoj Nag IMEC Belgium
Shu Nakaharai National Institute for Materials Science Japan
Yoshiaki Nakamura Osaka University Japan
Hiroshi Nakashima Kyushu University Japan
Emilio Nanni Massachusetts Institute of Technology United States
Lis Nanver Delft University of Technology Netherlands
Ettore Napoli University of Naples Italy
Federico Nardi Politecnico di Milano Italy
Toshiaki Natsuki Shinshu University Japan
Alok Naugarhiya PDPM IIITDMJ India
Mohammad Nazari Texas State University United States
Ivan Ndip Fraunhofer IZM Berlin Germany
Adam Neal Air Force Research Laboratory United States
Shelby Nelson Eastman Kodak United States
Tse Nga Ng Palo Alto Research Center United States
Sostene Nguembi MC2-technologies France
Chi-Nung Ni Applied Materials United States
Nidhi Nidhi University of California at Santa Barbara United States
Franz-Josef Niedernostheide Infineon Technologies AG Germany
Nikolaos  Nikolaou NCSR Demokritos Greece
Dmitri Nikonov Intel Corp United States
Takeki Ninomiya SanDisk Corporation Japan
Yann-Michel Niquet CEA Institute for Nanosciences and Cryogenics France
Yong-Young Noh Dongguk University Korea
Kazuki Nomoto University of Notre Dame United States
Kenji Nomura Tokyo Institute of Technology Japan
Arashk Norouzpour Shirazi Georgia Institute of Technology United States
Gregory Nusinovich University of Maryland United States
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Nixon O Dalsa, Inc. Canada
Anthony Oates Taiwan Semiconductor Manufacturing Company Taiwan
Aderinto Ogunniyi U.S. Army Research Laboratory United States
Min Suk Oh Korea Electronics Technology Institute Korea
Tohru Oka Toyoda Gosei Co., Ltd. Japan
Dai Okamoto Nara Institute of Science and Technology Japan
Serge Oktyabrsky University at Albany United States
Mototsugu Okushima Renesas Electronics Corporation Japan
Phil Oldiges IBM United States
Anthony O'Neill University of Newcastle upon Tyne United Kingdom
Duu Sheng Ong Multimedia University Malaysia
Mizuki Ono Toshiba Corporation Semiconductor Company Japan
Yasuhiko Oonishi Fuji Electric Device Technology Company, Ltd. Japan
Ömer Oralkan North Carolina State University United States
Clemens Ostermaier Infineon Technologies Austria AG Austria
Kensuke Ota Toshiba Corporation Semiconductor Company Japan
Richard Oxland TSMC Research Center Belgium
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Andrea Padovani Università di Modena e Reggio Emilia Italy
Marco Pala IMEP-LAHC France
Tomas Palacios Massachusetts Institute of Technology United States
Vassil Palankovski Technical University Vienna Austria
Pierpaolo Palestri Università degli Studi di Udine Italy
Felix Palumbo CNEA-CAC Argentina
Feng Pan Tsinghua University China
Tung-Ming Pan Chang Gung University Taiwan
Ashish A. Pande Georgia Institute of Technology United States
Saurabh Pandey Università di Bologna Italy
Shesh Mani Pandey GlobalFoundries Singapore
Claudio Paoloni Lancaster University United Kingdom
George Papaioannou University of Athens Greece
Andrei Papou Texas Instruments Inc. United States
Krishna Parat Intel Corp United States
Jong-Wan Park Hanyang University Korea
KeeChan Park Konkuk University Korea
Young-June Park Seoul National University Korea
Cheolmin Park Yonsei University Korea
Il Yong Park GlobalFoundries United States
Bertrand Parvais IMEC Belgium
Mahesh Patil Indian Institute of Technology Bombay India
Paolo Pavan Università di Modena e Reggio Emilia Italy
Dimitris Pavlidis Boston University United States
Nate Peachey RF Micro Devices, Inc. United States
Adam Peczalski University of Michigan United States
Milić Momčilo Pejović Univerzitet u Nis Serbia
Marcel Pelgrom Pelgrom Consult Netherlands
Fabio Pellizzer Micron Semiconductor Italia s.r.l. Italy
Jianwei Peng GlobalFoundries United States
Xavier Perpinya CNM-CSIC Spain
Krishna Persaud University of Manchester United States
Rebecca Peterson University of Michigan United States
Luisa Petti Eidgenössische Technische Hochschule Zürich Switzerland
Kin-Leong Pey Singapore University of Technology and Design Singapore
Anh-Tuan Pham Samsung Semiconductor Inc. United States
Joachim Piprek NUSOD Institute United States
Agostino Pirovano Micron Semiconductor Italia s.r.l. Italy
Gregor Pobegen KAI GmbH Austria
Dionyz Pogany Vienna University of Technology Austria
Ronald Polcawich US Army Research Laboratory United States
Eric Pop Stanford University United States
Amit Prakash Pohang University of Science and Technology Korea
Guillaume Prenat SPINTEC (CEA/CNRS) France
Themis Prodromakis University of Southampton United Kingdom
Werner Prost University Duisburg-Essen Germany
Henryk Przewłocki Institute of Electron Technology Poland
Francesco Maria Puglisi Università di Modena e Reggio Emilia Italy
Yevgeniy Puzyrev Vanderbilt University United States
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L.X. Qian University of Electronic Science and Technology of China China
Xiaotun Qiu Arizona State University United States
Manuel Quevedo University of Texas at Dallas United States
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Ujwal Radhakrishna Indian Institute of Technology Madras India
Iuliana Radu IMEC Belgium
Praveen Raghavan IMEC Belgium
Nagarajan Raghavan Singapore University of Technology and Design Singapore
Lars-Åke Ragnarsson IMEC Belgium
Munaf Rahimo ABB Switzerland Ltd Switzerland
Rajib Rahman Purdue University United States
Munira Raja University of Liverpool United Kingdom
Bijesh Rajamohanan SanDisk Corporation United States
Siddharth Rajan Ohio State University United States
Bipin Rajendran IBM T.J. Watson Research Center United States
Shantanu Rajwade Cornell University United States
Shaloo Rakheja New York University United States
Shriram Ramanathan Harvard University United States
Hemant Rao Intel Corp United States
Jean Raskin Catholic University of Louvain Belgium
Umberto Ravaioli University of Illinois at Urbana-Champaign United States
Cristian Ravariu Politehnica University of Bucharest Romania
Abhijit Ray Pandit Deendayal Petroleum University India
Vijay Reddy Texas Instruments Inc. United States
Mark Reed Yale University United States
Susanna Reggiani Università di Bologna Italy
Klaus Reimann NXP Semiconductors Netherlands
Hans Reisinger Infineon Technologies AG Germany
Tian-Ling Ren Tsinghua University China
Jingjian Ren SanDisk Corporation United States
Ignacio Rey-Stolle Instituto de Ciencia de Materiales de Sevilla Spain
Iman Rezanezhad Gatabi Cypress Semiconductor Corporation United States
Michele Riccio University of Naples Federico II Italy
Thomas Riedl University of Wuppertal Germany
Matteo Rinaldi Northeastern University United States
Rafael Rios Intel Corp United States
Dan Ritter Technion - Israel Institute of Technology Israel
John Robertson University of Cambridge United Kingdom
Fabrizio Roccaforte CNR-IMM Italy
Benjamin Rock Naval Research Laboratory United States
Noel Rodriguez Universidad de Granada Spain
Mark Rodwell University of California at Santa Barbara United States
John Rogers University of Illinois at Urbana-Champaign United States
Yakov Roizin Tower Semiconductor Ltd. Israel
Marco Rolandi University of Washington United States
Sean Rommel Rochester Institute of Technology United States
Sami Rosenblatt IBM Corporation United States
Kallol Roy Indian Institute of Science India
Scott Roy University of Glasgow United Kingdom
Tania Roy Georgia Institute of Technology United States
Ananda Roy Intel Corp United States
Kaushik Roy Purdue University United States
Alexander Rudenko Radboud University Nijmegen Netherlands
Holger Ruecker IHP GmbH Germany
Christian Russ Infineon Technologies AG Germany
Ewa Rysiakiewicz-Pasek Wroclaw Technical University Poland
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Daniel Saab Case Western Reserve University United States
Ismail Saad Universiti Malaysia Sabah Malaysia
Swatilekha Saha Cypress Semiconductor Corporation United States
Yahachi Saito Nagoya University Japan
Wataru Saito Toshiba Corporation Semiconductor Company Japan
Redwan Sajjad Massachusetts Institute of Technologty United States
Shigeki Sakai National Institute of Advanced Industrial Science and  Technology Japan
Ramon Salazar Purdue University United States
Javier Salcedo Analog Devices United States
Akram Salman Texas Instruments Inc. United States
Sanjiv Sambandan Indian Institute of Science India
José Manuel Sánchez-Pena Universidad Carlos III Spain
Ian Sandall University Surrey United Kingdom
Christian Sandow Infineon Technologies AG Germany
Alberto Santarelli Università di Bologna Italy
Sara Santos Sao Paulo University Brazil
Paulo Santos Paul-Drude-Institut für Festkörperelektronik Germany
Angik Sarkar Intel Corp United States
Shigehiko Sasa Osaka Institute of Technology Japan
Yoshitaka Sasago Hitachi Ltd. Japan
Paul Saunier TriQuint Semiconductor United States
Raghvendra Saxena Solid State Physics Labotarory India
Manoj Saxena University of Delhi India
Andries Scholten NXP Semiconductors Netherlands
Mirko Scholz IMEC vzw Belgium
Andreas Scholze IBM United States
Adolf Schoner Ascatron AB Sweden
Ronald Schrimpf Vanderbilt University United States
Hans-Joachim Schulze Infineon Technologies AG Germany
Joerg Schulze University of Stuttgart Germany
Mike Schwarz University of Applied Sciences Giessen-Friedberg Germany
Dennis Scott Northrop Grumman Corporation United States
Alan Seabaugh University of Notre Dame United States
Svetlana Sejas-Garcia ISOLA group United States
Lawrence Selvaraj Institute of Microelectronics Singapore
Debbie Senesky Stanford University United States
MunKyo Seo Sungkyunkwan University Korea
Ogyun Seok Korea Electrotechnology Research Institute Korea
Ankit Sharma Purdue University United States
James Shealy Cornell University United States
Shyh-Chiang Shen Georgia Institute of Technology United States
John Shen Illinois Institute of Technology United States
Scott Sheppard Cree, Inc. United States
David Sheridan RF Micro Devices, Inc. United States
Jinn-Kong Sheu National Cheng Kung University Taiwan
Jia-Min Shieh National Nano Device Laboratories Taiwan
Naoteru Shigekawa Osaka City University Japan
Chun-Hsing Shih National Chi Nan University Taiwan
Shin-ichi Shikata National Institute of Advanced Industrial Science and Technology Japan
Mincheol Shin KAIST Korea
Chansoo Shin Korea Advanced Nano-Fab Center Korea
Hyungcheol Shin Seoul National University Korea
Changhwan Shin University of Seoul Korea
Seung Heon Shin University of Texas at Austin United States
Keisuke Shinohara Teledyne Scientific & Imaging United States
Mayank Shrivastava Indian Institute of Science Bangalore India
Max Shulaker Stanford University United States
Michael Shur Rensselaer Polytechnic Institute United States
Etienne Sicard INSA France
Ralf Siemieniec Infineon Technologies Austria AG Austria
Dieter Silber University of Bremen Germany
Grigory Simin University of South Carolina United States
Eddy Simoen IMEC Belgium
Johnny Sin Hong Kong University of Science and Technology Hong Kong
Uttam Singisetti University at Buffalo United States
Jagadishwar Sirigiri Bridge12 Techologies Inc. United States
Gregory Snider University of Notre Dame United States
Mohammadreza Sohbati Imperial College London United Kingdom
Young-Soo  Sohn Catholic University of Daegu Korea
Paul Solomon IBM T.J. Watson Research Center United States
Takeshi Sonehara Toshiba Corporation Semiconductor Company Japan
Jeonghwan Song Pohang University of Science and Technology Korea
Yoonjong Song Samsung Electronics Co. Ltd Korea
Bo Song Cornell University United States
Liyang Song IBM United States
Ken'ichiro Sonoda Renesas Technology Corp. Japan
Bart Sorée IMEC Belgium
Anthony Sou University of Cambridge United Kingdom
Apostolos Sounas Ecole Polytechnique Fédérale de Lausanne Switzerland
Catalin Spataru Sandia National Laboratories United States
Saptharishi Sriram Cree, Inc. United States
Puneet Srivastava Massachusetts Institute of Technology United States
Jan Stake Chalmers University of Technology Sweden
Philipp Steinmann GlobalFoundries United States
Michael Stockinger Freescale Semiconductor Inc. United States
Tim Stowe Palo Alto Reseach Center United States
Denis Striakhilev Ignis Innovation Inc Canada
Dmitri Strukov University of California at Santa Barbara United States
Pin Su National Chiao Tung University Taiwan
John Suehle National Institute of Standards and Technology United States
Tetsuya Suemitsu Tohoku University Japan
Ikue Suemune Hokkaido University Japan
Tomislav Suligoj University of Zagreb Croatia
James Sullivan Lawrence Livermore National Laboratory United States
Caterina Summonte IMM-CNR sezione di Bologna Italy
Haifeng Sun Infineon Technologies Austria AG Austria
Weifeng Sun Southeast University China
Xiao Wei Sun Nanyang Technological University Singapore
Yanning Sun IBM Watson Research Center United States
Xiao Sun Yale University United States
Siddarth Sundaresan GeneSiC Semiconductor United States
Man Young Sung Korea University Korea
Manan Suri Indian Institute of Technology India
Safumi Suzuki Tokyo Institute of Technology Japan
Kouji Suzuki Toshiba Corporation Semiconductor Company Japan
Boris Svilicic University of Rijeka Croatia
Mark Sweet Univeristy of Sheffield United Kingdom
Somaia Sylvia University of California at Riverside United States
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Michiharu Tabe Shizuoka University Japan
Roozbeh Tabrizian Georgia Institute of Technology United States
Munehiro Tada NEC Corporation Japan
Ya-Hsiang Tai National Chiao Tung University Taiwan
Shinya Takashima Fuji Electric Co. Ltd. Japan
Hideki Takeuchi MEARS Technologies United States
Siddharth Tallur Analog Devices United States
Vincas Tamošiūnas Vilnius University Lithuania
Siew Li Tan CEA Grenoble France
Chuan Seng Tan Nanyang Technological University Singapore
Kenichiro Tanaka Panasonic Corp. Japan
Hideyuki Tanaka University of Tokyo Japan
Tetsufumi Tanamoto Toshiba Corporation Semiconductor Company Japan
Dongsheng Tang Hunan Normal University China
Minghua Tang Xiangtan University China
Zhikai Tang Efficient Power Conversion Corporation United States
Yuan Taur University of California at San Diego United States
Negar Tavassolian Stevens Institute of Technology United States
Augusto Tazzoli Technology Development & Innovation United States
Daniel Tekleab Aptina Imaging United States
Masayuki Terai Samsung Electronics Co. Ltd Korea
Vikram Thakar Sand 9 inc. United States
Gaurav Thareja Intel Corp United States
Iain Thayne University of Glasgow United Kingdom
Claes Thelander Lund University Sweden
Han Wui Then Intel Corp United States
N. David Theodore Freescale Semiconductor Inc. United States
Roland Thewes TU Berlin Germany
Manfred Thumm Karlsruhe Institute of Technology Germany
Jifa Tian Purdue University United States
Luuk Tiemeijer NXP Semiconductors Netherlands
Vinayak Tilak GE Global Research Center United States
Jose Maria Tirado University of Castilla-La Mancha Spain
Albert Titus University of Buffalo United States
Pramod Tiwari NIT Rourkela India
Hirokuni Tokuda University of Fukui Japan
Katsuhiro Tomioka Hokkaido University Japan
Akira Toriumi University of Tokyo Japan
Reydezel Torres-Torres INAOE Mexico
Antonio Torrezan Hewlett Packard United States
Fabrizio Torricelli Eindhoven University of Technology Netherlands
Nagumo Toshiharu Renesas Electronics Corporation Japan
David Trémouilles LAAS-CNRS France
Renan Trevisoli Centro Universitario da FEI Brazil
Robert Trew North Carolina State University United States
Jens Trommer NaMLab gGmbH Germany
Wen-Jer Tsai Macronix International Co. Ltd. Taiwan
Chun-Chien Tsai National Chiao Tung University Taiwan
Jung-Hui Tsai National Kaohsiung Normal University Taiwan
Andreas Tsormpatzoglou Aristotle University of Thessaloniki Greece
Bing-Yue Tsui National Chiao Tung University Taiwan
Atsushi Tsukazaki Tohoku University Japan
Kazuo Tsutsui Tokyo Institute of Technology Japan
Hans Tuinhout NXP Semiconductors Netherlands
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Ken-ichi Uchida Tohoku University Japan
Hiroyuki Uchiyama Hitachi Ltd. Japan
Tetsuzo Ueda Matsushita Electric Industrial Co Ltd Japan
Daisuke Ueda Semiconductor Device Research Center Japan
Yasuhiro Uemoto Panasonic Corp. Japan
Katsunori Ueno Advanced Power Device Research Association Japan
Miguel Urteaga Teledyne Scientific Company United States
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Sergey N. Vainshtein University of Oulu Finland
Christophe Vallée LTM, UMR CNRS 5129 France
Antonio Valletta CNR Italy
Mark van Dal TSMC Europe BV Belgium
Geert Van den bosch IMEC Belgium
Michiel van Duuren NXP Semiconductors Belgium
Marleen Van Hove IMEC Belgium
Lode Vandamme Eindhoven University of Technology Netherlands
William Vandenberghe University of Texas at Dallas United States
Marleen VanHove IMEC Belgium
Gabriel Vanko Institute of Electrical Engineering Slovakia
Piet Vanmeerbeek ON Semiconductor Belgium
Giorgio Vannini University of Ferrara Italy
Ramesh Vasan University of Arkansas United States
Tim Vasen TSMC Sweden
Vladislav Vashchenko Maxim Integrated Products Inc United States
Dragica Vasileska Arizona State University United States
Sam Vaziri KTH Royal Institute of Technology Sweden
Dmitry Veksler Sematech United States
Jyothi Bhaskarr Velamala Arizona State University United States
Victor Veliadis Northrop Grumman Electronic Systems United States
Silviu Velicu EPIR Technologies United States
Georgios Vellianitis TSMC Europe BV Belgium
Anne Verhulst IMEC Belgium
Alexey Vert Sematech United States
Andrei Vescan RWTH Aachen University Germany
Anthony Villalon CEA LETI France
Kumar Virwani IBM Almaden Research Center United States
Xuan Thang Vu RWTH Aachen University Germany
Yury Vygranenko ISEL Portugal
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Keiji Wada Sumitomo Electric Industries, Ltd. Japan
John Wager Oregon State University United States
Sigurd Wagner Princeton University United States
Christian Walczyk IHP GmbH Germany
Niamh Waldron IMEC Belgium
Amey Walke Indian Institute of Technology Bombay India
Andrew Walker Schiltron Corporation United States
Jing Wan IMEP-LAHC France
Shiwei Wang IMEC Belgium
Hao Wang Fairchild Semiconductors China
Runsheng Wang Peking University China
Jin-Yan Wang Peking University China
Mingxiang Wang Soochow University China
Zheyao Wang Tsinghua University China
Hao Wang Wuhan University China
Yu Wang Hong Kong Polytechnic University Hong Kong
Xingsheng Wang University of Glasgow United Kingdom
Dapeng Wang Applied Materials United States
Miaomiao Wang IBM Research United States
Yun Wang Intermolecular United States
Ruey-Ven Wang Intermolecular United States
Xufeng Wang Purdue University United States
Chuan Wang Qualcomm Technologies, Inc United States
Kang L. Wang University of California at Los Angeles United States
Han Wang University of Southern California United States
Rainer Waser Forschungszentrum Julich GmbH Germany
Edward Wasige University of Glasgow United Kingdom
Issei Watanabe National Institute of Information and Communications Technology Japan
Cory Weber Intel Corp United States
Robert  Weikle II University of Virginia United States
Claude Weisbuch University of California at Santa Barbara United States
Andreas Weisshaar Oregon State University United States
Charles Weitzel - United States
Lars-Erik Wernersson Lund University Sweden
Jeff West Texas Instruments Inc. United States
Colin Whyte University of Strathclyde United Kingdom
Timothy Wilkinson University of Cambridge United Kingdom
Gilson Wirth UFRGS Brazil
Stephen Wirths Forschungszentrum Julich GmbH Germany
Rob Wolters University of Twente Netherlands
Man Wong Hong Kong University of Science and Technology Hong Kong
Man Hoi Wong National Institute of Information and Communications Technology Japan
Simon Wong Stanford University United States
H.-S. Philip Wong Stanford University United States
Dirk Wouters RWTH Aachen University Germany
Tian-Li Wu IMEC Belgium
Dongping Wu Fudan University China
Huaqiang Wu Tsinghua University China
Rongxiang Wu University of Electronic Science and Technology of China China
Zhengyun Wu Xiamen University China
YewChung Sermon Wu National Chiao Tung University Taiwan
Yung-Chun Wu National Tsing Hua University Taiwan
Meng-Chyi Wu National Tsing Hua University Taiwan
Yung-Hsien Wu National Tsing Hua University Taiwan
Chung-Cheng Wu Taiwan Semiconductor Manufacturing Company Taiwan
Ernest Wu IBM Microelectronics Division United States
Heng Wu Purdue University United States
Shin-Tson Wu University of Central Florida United States
Joachim Wuerfl Ferdinand-Braun-Institut Germany
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Ling Xia Massachusetts Institute of Technology United States
Xiang Xiao Peking University China
Dan Xie Tsinghua University China
Gang Xie Zhejiang University China
Wendong Xing IBM Semiconductor Research and Development Center United States
Yong Zhong Xiong Institute of Microelectronics Singapore
Yong Xu Dongguk University Korea
Dong Xu BAE Systems United States
Guangyu Xu Harvard University United States
Xin Xu Purdue University United States
Nuo Xu Samsung Semiconductor Inc. United States
Yong Xu Wayne State University United States
Quan Xue City University of Hong Kong Hong Kong
Fei Xue Intel Corp United States
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Hisato Yabuta Canon Research Center Japan
Wei Yan Nanjing Normal University China
Manabu Yanagihara Panasonic Corp. Japan
Mei Yang Sun Yat-sen University China
Hongchun Yang University of Electronic Science and Technology of China China
Shu Yang Hong Kong University of Science and Technology Hong Kong
Hua Yang Tyndall National Institute Ireland
Shinhyuk Yang ETRI Korea
Kyounghoon Yang KAIST Korea
Joon Young Yang LG Display Korea
Chih-Ciao Yang National Cheng Kung University Taiwan
Yang Yang Texas Instruments Inc. United States
Jianhua (Joshua) Yang University of Massachusetts United States
Hiroshi Yano University of Tsukuba Japan
Jiandong Ye Australian National University Australia
Hsiao-Tsung Yen Taiwan Semiconductor Manufacturing Company Taiwan
Kiat-Seng Yeo Nanyang Technological University Singapore
Yee-Chia Yeo National University of Singapore Singapore
Chun Wing Yeung IBM United States
Junsin Yi Sungkyunkwan University Korea
Youngki Yoon University of Waterloo Canada
Jun-Bo Yoon KAIST Korea
Sung Min Yoon Kyung Hee University Korea
Kristina Young-Fisher Sematech United States
Hao Yu IMEC Belgium
HongYu Yu South University of Science and Technology of China China
Zhiping Yu Tsinghua University China
Hsin-Chieh Yu National Cheng Kung University Taiwan
Shimeng Yu Arizona State University United States
Hongbin Yu Arizona State University United States
Xiaobin Yuan IBM United States
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Nick Zakhleniuk University of Essex United Kingdom
Faisal  Zaman Qualtré, Inc. United States
Enrico Zanoni Università di Padova Italy
Jun Zeng MaxPower Semiconductor Inc United States
Yuping Zeng University of California at Berkeley United States
Carl-Mikael Zetterling KTH Royal Institute of Technology Sweden
Leqi Zhang IMEC Belgium
Shengdong Zhang Peking University China
Chao Zhang Semiconductor Manufacturing International Corporation China
Yibin Zhang Suzhou Institute of Nano-Tech & Nano-Bionics China
Bo Zhang University of Electronic Science and Technology of China China
Rui Zhang Zhejiang University China
Lining Zhang Hong Kong University of Science and Technology Hong Kong
Rui Zhang University of Tokyo Japan
Jian Zhang Ecole Polytechnique Fédérale de Lausanne Switzerland
Wei Zhang Liverpool John Moores University United Kingdom
Jian Zhang Liverpool John Moores University United Kingdom
Junhao Zhang University of Cambridge United Kingdom
Liang Zhang University of Strathclyde United Kingdom
Haifeng Zhang Arizona State University United States
Qingchun Zhang Cree, Inc. United States
Chen Zhang IBM Research United States
Long Zhang University of Alabama United States
Yuying Zhang University of Utah United States
Dongxu Zhao Chinese Academy of Sciences China
Hongbin Zhao General Research Institute for Nonferrous Metals China
Cezhou Zhao Xi'an Jiaotong-Liverpool Univerpool China
WeiSheng Zhao Univ. Paris-Sud 11 France
Qing-Tai Zhao Forschungszentrum Julich GmbH Germany
Rong Zhao Singapore University of Technology and Design Singapore
Kai Zhao IBM Research Division United States
Feng Zhao Washington State University United States
Ares Zhou HKG Technologies Limited Hong Kong
Wei Zhou Hong Kong University of Science and Technology Hong Kong
Yuanzhong Zhou Analog Devices United States
Shou-En Zhu Delft University of Technology Netherlands
Weiguang Zhu Nanyang Technological University Singapore
Thomas Zimmer Université de Bordeaux France
Dimitrios Zografopoulos CNR-IMM Italy
Christian Zorman Case Western Reserve University United States
Paola Zuliani STMicroelectronics Italy
Chengjie Zuo Qualcomm Technologies, Inc United States

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