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Masters and PhD Student Fellowship Committee

  • Student Fellowship Committee Chair

    • Carmen M. Lilley
      Carmen M. Lilley portrait
      University of Illinois at Chicago
      Department of Mechanical Engineering
      1200 West Harrison St.
      3031 ERF MC 251
      Chicago, Illinois 60607
      USA
      Phone 1:
      312-413-7561

      Fax:
      312-413-0447

      Dr. Carmen M. Lilley obtained her BS in General Engineering at the University of Illinois at Urbana-Champaign in 1998. She then attended Northwestern University and obtained her PhD in Theoretical and Applied Mechanics in 2003. Upon completing her PhD, she joined the Department of Mechanical and Industrial Engineering at the University of Illinois at Chicago as an Assistant Professor and was promoted to Associate Professor in 2010. Dr. Lilley has published in prestigious journals such as the Applied Physics Letters (APL), Journal of Applied Physics (JAP), and Nano Letters. She served as an Associate Editor for the ASME Journal of Computational on Nonlinear Dynamics from 2011-2015, and has reviewed manuscripts for APL, Journal of Applied Mechanics, JAP, Journal of Vibration and Acoustics, and Nano Letters. She has received various awards such as the National Science Foundation Faculty Early Career (CAREER) Development Award and the College of Engineering Research Award.
      Dr. Lilley is a senior member of IEEE. Within EDS, Dr. Lilley is on the IEEE Electron Devices Society Educational Committee Member (2012-Present), Chair of the MS and PhD Fellowship Committee (2014-Present), and a Board-of-Governors Member-at-Large (2015-Present). She is the technical committee chair on Nanomaterials for the Nanotechnology Council (NTC) (2006-Present) and served as their Council Representative for IEEE Women in Engineering Society (2012-2016). She has also served on the program committee for the NTC flagship conference IEEE Nano as a reviewer, track chair, and was the technical program chair for IEEE Nano 2014.
  • Student Fellowship Committee Members

    • Deji Akinwande
       - Emerging Technologies and Devices; Thin Film Transistors
      Deji Akinwande portrait
      University of Texas at Austin
      ECE
      10100 Burnet Road, Bldg. 160
      Austin, TX 78758
      USA
      Phone 1:
      +1 703 623 6423

      Dr. Deji Akinwande received the PhD degree in Electrical Engineering from Stanford University in 2009, where he conducted research on the synthesis, device physics, and circuit applications of carbon nanotubes and graphene. His Master’s research in Applied Physics at Case Western Reserve University pioneered the design and development of near-field microwave probe tips for nondestructive imaging and studies of materials.

      He is an Endowed Faculty Fellow and Associate Professor at the University of Texas at Austin. Prof. Akinwande has been honored with the 2016 Presidential PECASE award, the inaugural Gordon Moore Inventor Fellow award, the inaugural IEEE Nano Geim and Novoselov Graphene Prize, the IEEE "Early Career Award" in Nanotechnology, the NSF CAREER award, several DoD Young Investigator awards, the 3M Nontenured Faculty Award, and was a past recipient of fellowships from the Kilby/TI, Ford Foundation, Alfred P. Sloan Foundation, and Stanford DARE Initiative. His recent results on silicene have been featured by nature news, Time magazine and was selected among the top 2015 science stories by Discover magazine. His work on flexible 2D electronics was highlighted among the "best of 2012" by the nanotechweb news portal and has been featured on MIT's technology review and other technical media outlets. He is a distinguished lecturer of the IEEE Electron Device Society and an Editor for the IEEE Electron Device Letters and Nature NPJ 2D Materials and Applications. He co-authored a textbook on carbon nanotubes and graphene device physics by Cambridge University Press, 2011, and was recently a finalist for the Regents' Outstanding Teaching Award, the highest teaching award from the University of Texas System.

      1. Flexible 2D Nanoelectronics: Device Physics, Mechanics and Circuits

      2. Wafer-scale Graphene Growth and Si-CMOS Integration
    • Durga Misra
       - Senior Member
      Durga  Misra portrait placeholder
      NJ Institute of Technology
      Electrical and Comp. Eng. Department
      323 M L King Blvd.
      Newark, NJ 07102-1824
      USA
      Phone 1:
      +1 973 596 5739

      Lecture Topics:
      1. Challenges for Nanoelectronics: More Moore and More than Moore.
      2. High-k on High-Mobility Substrates: An interface Issue
    • Ravi M. Todi
       - MOS Devices and Technology
      Ravi M.  Todi portrait
      Fellow
      Director, Product Management
      GlobalFoundries
      2600 Great America Way
      Santa Clara, CA 95054
      USA
      Phone 1:
      408-462-4926

      Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.