Meetings Committee

  • Vice President of Technical Committees and Meetings

    • Ravi M. Todi
       - MOS Devices and Technology
      Director, Product Management
      2600 Great America Way
      Santa Clara, CA 95054
      Phone 1:

      Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
  • Meetings Committee Members

    • Navakanta Bhat
      Indian Institute of Science
      Brief bio:
      Navakanta Bhat received his Ph.D. in Electrical Engineering from Stanford University, in 1996. Then he worked at Motorola’s Advanced Products R&D Lab in Austin, TX until 1999. He is currently a Professor at the Indian Institute of Science (IISc), Bangalore. His current research is on Nanoelectronics and Sensors. He has more than 200 publications and 20 patents. He was instrumental in creating the National Nanofabrication Centre (NNfC) at IISc, benchmarked against the best university facilities in the world. He is the recipient of IBM Faculty award and Outstanding Research Investigator award (Govt. of India). He is a Fellow of INAE. He was the Editor of IEEE Transactions on Electron Devices, during 2013-2016. He is the member of the National Innovation Council in Nanoelectronics. He is the founder and promoter of a startup called “PathShodh Healthcare”, which builds point-of-care diagnostics for diabetes and its complications.

      Distinguished Lecturer Topics:
      1. Nanotransistors with 2D materials : Opportunities and Challenges

      2. Electrochemical Biosensors for managing Diabetes and its Complications

      3. Single Chip Metal Oxide Gas Sensor Array for Environment Monitoring

      4. Nanostructured High Performance Gas sensors
    • Zeynep Celik-Butler
       - Solid State Device Phenomena
      University of Texas at Arlington
      Nanofab Building
      PO Box 19072
      Arlington, TX 76019
      Zeynep Çelik-Butler is Professor of Electrical Engineering and Director of Nanotechnology Research and Teaching Facility at the University of Texas at Arlington. She received dual B.S. degrees in electrical engineering and physics from Bogaziçi University, Istanbul, Turkey, in 1982. She received the M.S. and Ph.D. degrees in electrical engineering in 1984 and 1987, respectively, from the University of Rochester. She was an IBM Pre-doctoral Fellow from 1983 to 1984, and an Eastman Kodak Pre-doctoral Fellow from 1985 to 1987. She joined the Department of Electrical Engineering at Southern Methodist University in 1987 as an Assistant Professor; was tenured and promoted to Associate Professor in 1993. Dr. Çelik-Butler was the holder of J. Lindsay Embrey Trustee Assistant Professorship from 1990 to 1993. She served as the Assistant Dean of Graduate Studies and Research from 1996 to 1999. She moved to University of Texas at Arlington in 2002.
      She served in various technical committees including 1988, 1989 IEEE-IEDM's and Annual Symposia on Electronic Materials, Processing and Characterization (1989 - 1992) and International Conference on Noise in Physical Systems and 1/f Fluctuations (1993, 1999, 2001-2009). She was the General Chair of TEXMEMS II Workshop. She was the co-Chair for the SPIE Conf. on Noise in Devices and Circuits in the Symp. on Fluctuation and Noise (FaN'2003) and the symposium co-chair for the same symposium in 2005 (FaN’2005). She has served as the Co-Chair for Focused Sessions at the 2016 and 2017 IEEE Sensors Conferences. She was an editor for Fluctuation and Noise Letters from 1999 to 2005. She currently serves in the editorial board of Journal of Nanoelectronics and Optoelectronics and is a topical editor for IEEE Sensors Journal.
      Prof. Çelik-Butler has received several awards including the University of Texas at Arlington Outstanding Research Achievement Award (2006), IEEE-Dallas Section Electron Devices Society Outstanding Service Awards (1995, 1997), IEEE-Electron Devices Society, Service Recognition Award (1995, 2009), IEEE-Electron Devices Society, Distinguished Lecturer Appreciation Award (2006), Outstanding Electrical Engineering Graduate Faculty Awards (1996, 1997, 2001), and SMU-Sigma Xi Research Award (1997).She was inducted into the Academy of Distinguished Scholars of University of Texas in 2017. Her research interests include microelectromechanical systems, multi-functional reconfigurable sensors, noise and reliability in nanoelectronic devices. She has seven awarded and three pending patents, seven book chapters, and over 200 journal and conference publications in these fields. Dr. Çelik -Butler’s research has been supported by NSF, NASA, AFOSR, ARO, Texas Higher Education Coordinating Board, SRC, Texas Instruments, Freescale Semiconductor, Laerdal Co., L-3 Communications, Legerity, ST-Microelectronics, Raytheon and Lockheed Martin Aeronautics.
      Dr. Çelik-Butler is a Fellow of IEEE, and life member of Eta Kappa Nu. She is a Distinguished Lecturer for the IEEE-Electron Devices Society.
    • Albert Chin
       - Fellow
      Thin Film Transistors
      National Chiao Tung University
      Dept. of Electronics Engineering
      Hsinchu Taiwan
      Phone 1:

      Lecture Topics: high-Îş Si and Ge CMOS, high-Îş flash memory, ultra-low power green electronic devices, TFT, device-level 3D IC, Si RF devices

      Biography: Albert Chin received Ph.D. from University of Michigan, Ann Arbor, in 1989 and B.S. from National Tsing Hua University in 1982.
      He was with AT&T Bell Labs, General Electric E-Lab, and Texas Instruments SPDC. He has been a professor, vice executive officer of diamond project and deputy director of National Chiao Tung University, and a visiting Professor at National University of Singapore.
      He is a pioneer on low DC-power high-κ CMOS, high-κ Flash memory, high mobility Ge-On-Insulator, low AC-power 3D IC, high power asymmetric-MOSFET, Si fs/THz devices, and resonant-cavity photo-detector. He co-authored >500 papers and 7 “Highly Cited Papers” (top 1% citation). His high-κ CMOS, GeOI, Flash memory, and RF devices were also cited by ITRS
      Dr. Chin has served as Subcommittee Chair and Asian Arrangements Chair of IEDM Executive Committee, Editor of IEEE Electron Device Letters, Guest Editor & Editor-in-Chief of IEEE JEDS Special Issue on Advanced Technology for Ultra-Low Power Electronic Devices, and IEEE EDS Technical Committee Chairs on both Electronic Materials and Compound Semiconductor Devices & Circuits. He is an IEEE Fellow, Optical Society of America Fellow, and Asia-Pacific Academy of Materials Academician.
    • Sean Cunningham
      Intel Corporation
      2200 Mission College Boulevard
      Santa Clara, CA 95054
      T-SM Subject Category:  Factory Integration
    • Don Disney
    • Xiaojun Guo
       - Optoelectronics, Display, Imaging
      Shanghai Jiao Tong University
      Electronic Engineering, SEIEE 1-208
      800 Dongchuan Rd
      Minhang, Shanghai 200240
      Phone 1:
      86 21 34207260

      86 21 34207260
      Xiaojun Guo is now Professor in Department of Electronic Engineering at Shanghai Jiao Tong University, China. He received the Bachelor degree from Jilin University (China) in 2002, and the Ph.D. degree from University of Surrey (UK) in 2007, both in electronic engineering. He worked on EDA for VLSIs in Department of Electronic Engineering at Tsinghua University during 2002-2003. His PhD research was on system-on-panel integration with low-temperature poly-Si TFTs. Before joining Shanghai Jiao Tong University in Aug. 2009, he had been working in Plastic Logic Ltd., Cambridge, UK, on research and development of printed polymer TFTs backplanes for flexible displays, and technology transfer for manufacturing. His group at Shanghai Jiao Tong University is now focusing on device and integration of printable thin film transistors and functional devices including displays, sensors and memories. He has authored or co-authored more than 60 technical papers in international journals and conference.
    • Shuji Ikeda
      Tei Solutions, Co. Ltd.
      16-1 Onogawa
      Tsukuba, Ibaraki 305-8
      Phone 1:
      +81 29 849 1276

      +81 29 849 1533

      Shuji Ikeda (M’91-SM’02-F’04) received the B.S. degree in Physics, PhD. in Electrical Engineering from Tokyo Institute of Technology, Tokyo, Japan in 1978 and 2003 respectively and the M.S. degree in Electrical Engineering from Princeton University, Princeton, New Jersey, USA in 1987. He joined Semiconductor and Integrated Circuit Group, Hitachi ltd., Tokyo, Japan in 1978, where he was engaged in research and development of state of the art SRAM process and devices. He was also working on developing process technology for LOGIC, embedded memories, and CMOS power RF devices and on transferring technology to mass production line. He invented some of the outstanding structures for SRAM. He pioneered process to implement new materials in mass production, including W-polycide, Al-Cu-Si in 1984 and in-situ phosphorus-doped-polysilicon in 1990. He is the first to realize Lightly Doped Drain (LDD) in production to suppress Hot Carrier Injection in 1984. He also firstly implemented polyimide coat of the chip to immune SER caused by alpha particle from the resin covers the chip. In October 2000, he joined Trecenti Technologies Inc. He developed new process scheme with aggressive reduction of process time and suitable for single-wafer processing. That achieved less than 0.25days/layer cycle time. In April 2005, he joined ATDF at Austin Texas, as a Director of Technology. Where he develops various kinds of technologies includes scaled CMOS, non-classical CMOS, new materials and tools. He established tei Technology LLC in May 2008, Omni Water Solutions LLC, in 2009 at Austin Texas. He started tei Solutions Inc in Tsukuba, Ibaraki, Japan in 2010, where, he manages R&D foundry developing new devices, process technologies for VLSIs. He also integrates emerging technology onto semiconductor manufacturing technology to create innovative products/businesses. Due to his contributions to 200 MHz RISC microprocessor, he got 1999 R&D 100 Award. He served as subcommittee and executive committee member of IEDM from 1993 to 2002. He introduced Manufacturing Session in 1998 and chaired IEDM in 2002. He was a member of EDS Administrative Committee from 2005 to 2010. He was a technical program member for VLSI Technology Symposium in 2007 and 2008. He serves as a chairman of VLSI committee of EDS from 2009 and AdHoc Committee on Asia EDS Conference from 2014.

    • Benjamin Iniguez
       - Device and Process Modelling
      Senior Member
      Universitat Rovira i Virgili (URV)
      Avinguda dels Paisos Catalans 26
      Tarragona 43007
      Phone 1:
      34 977558521

      34 977559605
      Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs.
      His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.
    • Subramanian Iyer
       - Fellow
      Distinguished Chancellors Professor and IBM Fellow
      Electrical Engineering Department
      CA 90024
      310 825 6913

      914 329 3341

      Lecture Topics: Orthogonal Scaling, embededed Memory, system scaling, 3D integration, semiconductors
    • Durga Misra
       - Senior Member
      NJ Institute of Technology
      Electrical and Comp. Eng. Department
      323 M L King Blvd.
      Newark, NJ 07102-1824
      Phone 1:
      +1 973 596 5739

      Lecture Topics:
      1. Challenges for Nanoelectronics: More Moore and More than Moore.
      2. High-k on High-Mobility Substrates: An interface Issue
    • Hisayo S. Momose
       - Fellow
      Yokohama National University
      79-5 Tokiwadai, Hodogaya-ku
      Yokohama 240-8501
      Phone 1:
      +81 45 339 3213

      +81 45 339 4456
    • Tian-Ling Ren
       - Senior Member
      Tsinghua University
      Institute of Microelectronics
      Beijing 100084
      Phone 1:
      +86 10 6278 9151

      Phone 2
      Ext. 311

      Lecture Topics: New Material Based Micro/Nano Devices Flexible Electronics Novel Acoustic and RF Devices Non-volatile Memory

      Biography: Tian-Ling Ren received his Ph.D. degree in solid-state physics from Department of Modern Applied Physics, Tsinghua University, China in 1997.

      He is full professor of Institute of Microelectronics, Tsinghua University since 2003. He has been a visiting professor at Electrical Engineering Department, Stanford University from 2011 to 2012.

      For these years, Prof. Ren’s research mainly focused on novel micro/nano electronic devices and key technologies, including nonvolatile memories (RRAM, FeRAM), RF devices (resonator, inductor), sensors, and MEMS. Prof. Ren’s main contributions are that he has developed the new integration methods for novel material based micro/nano device and circuit applications. For examples, he proposed the RRAM structure with integration of single layer graphene, which can drastically decrease the power consumption of the device; he developed the ferroelectric thin film based integrated acoustic devices; he also proposed the graphene sound source devices for the first time; and he realized the high quality ultra-flexible structured RF resonators with very promising applications. He has published more than 300 journal and conference papers. He has more than 40 patents.

      He has been an Elected Member at Large, and Distinguished Lecturer of IEEE Electron Devices Society. He is also Council Member of Chinese Society of Micro/Nano Technology. For these years, Prof. Ren has been the technical committee member for several leading international conferences, including International Electron Device Meeting (IEDM), and Device Research Meeting (DRC). He is also editorial board member of Scientific Reports (Nature Publishing Group).

    • Samar K. Saha
       - Senior Member
      Prospicient Devices
      Milpitas, CA 95035
      Phone 1:
      +1 408 966 5805

      Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

    • Lee (Stephen) Smith
    • Charles Surya
       - Optoelectronics Devices
      Hong Kong Polytechnic University
      Electronic and Information Engineering
      Yuk Choi Road
      Hong KongHong Kong
      Phone 1:
      852 2766 6220

      852 2362 4711

      Charles Surya received his PhD in Electrical Engineering from the University of Rochester in 1987. From 1987 to 1994 he was associated with the Electrical and Computer Engineering Department of Northeastern University.  He joined the Electronic and Information Engineering (EIE) Department in 1994 and remained there since.  Professor Surya’s research interests are: optoelectronic materials and devices including MOCVD growth of GaN thin films and the study of GaN-based LEDs and UV detectors; growth of organic-inorganic hybrid perovskite materials and the fabrication of advanced perovskite based photovoltaic cells; and low-frequency noise in electron devices. Presently, Professor Surya is spearheading a collaborative effort between The Hong Kong Polytechnic University and the City of Dongguan, China for the establishment of an R&D Center on the study of photovoltaic materials, devices and systems.  He became a full professor of the Department in 2002andsince 2013hewas appointed Clarea Au Endowed Professor in Energy.  Professor Surya had served in various administrative posts including Associate Head of the EIE Department (2002-2005), Associate Dean of the Faculty of Engineering (2007 – 2010) and the Acting Dean of the Faculty of Engineering (2010 – 2012) of The Hong Kong Polytechnic University.  While serving as the Associate Dean and Acting Dean of the Faculty he was responsible for the implementation of outcome-based approach in the Engineering Faculty.  From 2007 – 2013 Professor Surya was the The Hong Kong Polytechnic University representative to the Hong Kong University Grants Council Panel for Outcome-based Education to oversee the implementation of Outcome-based Approach among the Engineering Faculties in Hong Kong.  He had been active in EDS and had served in various capacities including conference co-chair and chapter chair in the past.  He is presently serving as the Chairman of the Optoelectronic Devices Technical Committee.

    • Richard B. True
       - Dr.
      L-3 Communications
      Electron Devices Division
      960 Industrial Road
      San Carlos, CA 94070-4194
      Phone 1:
      +1 650 486 5572

      +1 650 508 1956
    • Juzer Vasi
      Department of Electrical Engineering
      Indian Institute of Technology
      Bombay, Mumbai 400076
      Juzer Vasi is with the EE Department at the Indian Institute of Technology Bombay (IITB), Mumbai. He has worked in in the areas of CMOS and Photovoltaic devices. He was co-founder of the National Centre for Photovoltaic Research and Education (NCPRE) at IITB, and is the Research Thrust Co-Lead for the Solar Energy Research Institute for India and the US (SERIIUS), a bi-national consortium project. His current area of research is photovoltaic module reliability.
      He is a Fellow of the IEEE and the Indian National Academy of Engineering (INAE). He was an Editor of IEEE Transactions on Electron Devices from 1996 to 2003, an EDS Distinguished Lecturer from 2001 to 2006, and Chair of the EDS Asia-Pacific SRC from 2005 to 2006.
      He obtained the B.Tech. degree in Electrical Engineering from IITB and a Ph.D. from Johns Hopkins University.
    • Ya-Hong Xie
       - Fellow
      Biography: Ya-Hong Xie obtained his BSc in Physics from Purdue University in 1981, and his MSc and PhD in Electrical Engineering from the University of California at Los Angeles in 1983 and 1986, respectively. He joined the Physical Sciences and Engineering Research Division of Bell Laboratories in 1986 upon graduation from UCLA. He was a member of the technical staff at Bell Labs from 1986 till 1999. He joined the faculty of UCLA in 1999 as a professor in the department of Materials Science and Engineering. His current research interests include understanding the intriguing physical properties of graphene, plasmonic for biosensing, nano-science and engineering, and epitaxial growth of lattice mismatched hetero-structures including group-III nitrides and Si-based heterostructures. Ya-Hong Xie has authored and co-authored over 150 technical articles/book chapters, and holds 38 US patents. He is a member of the American Physical Society, the Materials Research Society, and a fellow of IEEE. He is the recipient of 2012 Alexander von Humboldt Research Award.
    • Bin Zhao
       - Fellow
      ON Semiconductor
      32 Discovery, Suite 100
      Irvine, CA 92618
      Phone 1:
      +1 949 266 6800

      +1 614 737 6800

      Lecture Topics:

      > Analog/Mixed-Signal/RF IC and Enabling Technologies
      > High Performance VLSI Interconnect