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The FinFET 3D Transistor and the Concept Behind It Abstract

Intel recently announced that it will use 22 nm FinFET technology for CPU production starting late 2011. This is the beginning of a new era in the IC industry using 3D transistors. At this scale, traditional 2D MOSFETs suffer from a host of problems including variability and power dissipation. To keep its members at the leading edge of technology, IEEE Electron Devices Society is launching its first e-Seminar to explain how FinFETs work and help mitigate these problems. The concepts of "ultra-thin-body (UTB) MOSFET" and of the body thickness as a new scaling parameter (as gate oxide thickness used to be) will be illustrated with FinFET and UTB-SOI.