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ExCom

The EDS Executive Committee (ExCom) is an 11 member body comprised of the society's officers (seated Presidents, Treasurer, Secretary), Standing Committee Vice Presidents, and the EDS Executive Director.  The Executive Committee provides the Board of Governors with strategic vision and long-term planning for the Society, oversees the finances and operations of the Society, and proposes new initiatives as well as policy changes.  The current ExCom members are listed below.

President: President-Elect assumes the position of President for a two-year term, (maximum one term) after serving as President-Elect for two years. The President has BoG voting privileges.
President Elect: Elected for a two-year term, maximum one term. The President-Elect has BoG voting privileges.
Secretary: Elected for a two-year term, no maximum terms. The Secretary has BoG voting privileges.
Treasurer: Elected for a two-year term, no maximum terms. The Treasurer has BoG voting privileges
Jr. & Sr. Past Presidents: have two-year terms and BoG voting privileges. 
Vice Presidents: have two-year renewable terms and Forum voting privileges.

  • President

    • Samar K. Saha
       - Senior Member
      Samar K. Saha portrait
      Prospicient Devices
      Milpitas, CA 95035
      USA
      Phone 1:
      +1 408 966 5805

      Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

  • President Elect

  • Jr. Past President

    • Albert Z.H. Wang
       - Fellow
      Albert Z.H. Wang portrait
      University of California
      Dept. of Electrical and Computer Engineering
      Office: 417 EBU2, Lab: 227 EBU2
      Riverside, CA 92521
      USA
      Phone 1:
      +1 951 827 2555

      Fax:
      +1 951 827 2425

      Lecture Topics:


      1. ESD-RFIC co-design techniques.
      2. Mixed-mode ESD protection circuit simulation design methodology.
      3. Above-IC ESD protection by nano technology
      4. Field-programmable ESD protection by nano technology

  • Sr. Past President

    • Paul K.L. Yu
       - Fellow
      Paul K.L.  Yu portrait
      University of California at San Diego
      ECE Department, MS 0407
      9500 Gilman Dr., Eng. Bldg. Unit 1, Room 3604
      La Jolla, CA 92093-0407
      USA
      Phone 1:
      +1 858 534 6180

      Fax:
      +1 858 534 0556
      Lecture Topics: Recent Advances in Photonic Devices for RF/Wireless, Semiconductor Wafer Bonding Technology for Device Integration
  • Secretary

    • Simon Deleonibus
       - Fellow
      Simon  Deleonibus portrait placeholder
      Chief Scientist/Directeur Scientifique
      Silicon Technologies
      CEA/LETI, MINATEC
      17 rue des Martyrs
      Grenoble Cedex 38054
      France
      Phone 1:
      +33 438 785973

      Fax:
      33 438 785183
      Lecture Topics: Nanoelectronics CMOS and Memories Integration and Scaling, Hetrogeneous Integration of Devices and Materials, M/NEMS, 3D integration, Bonding and Integration, More Moore, More than Moore, Beyond CMOS devices
  • Treasurer

    • Subramanian Iyer
       - Fellow
      Subramanian Iyer portrait placeholder
      Distinguished Chancellors Professor and IBM Fellow
      Electrical Engineering Department
      UCLA
      CA 90024
      USA
      Work:
      310 825 6913

      Cell:
      914 329 3341

      Lecture Topics: Orthogonal Scaling, embededed Memory, system scaling, 3D integration, semiconductors
  • Vice President of Regions and Chapters

    • M.K. Radhakrishnan
       - Senior Member
      M.K.  Radhakrishnan portrait
      NanoRel Technical Consultants
      273, 18D Main, 6th Block
      Koramangla, Bangalore 560095
      India
      Phone 1:
      +91 80 25630695

      Phone 2
      +91 9447663869

      Lecture Topics: 1. Physical Analysis Challenges and Interface Physics Studies in Silicon Nano Devices 2.  Building in Reliability in Devices through Analysis and Study of Failure Mechanisms.


      Biography:  M.K. Radhakrishnan (M’82-SM’94) received B.Sc from Kerala University, India in 1972, M.Sc in Solid State electronics from Sardar Patel University, India in 1975 and Ph.Ddegree in Semiconductor Physics from Cochin University of Science and Technology in 1981.


      He is currently Directorof NanoRel Technical Consultants Singapore from 2004.  He has been with Indian Space Research Organization till 1990. From 1991-1993 he was with ST Microelectronics Singapore. From 1993 to 2001 he was with Institute of Microelectronics Singapore, where he pioneered the setting up of a full-fledged device failure analysis laboratory.  From 1994 to 2004 he served as adjunct professor at National University of Singapore. His current research interests include analysis and reliability in nano-electronic devices and interface physics studies.


      Dr. Radhakrishnan is a fellow of Institution of Electrical and Telecommunication Engineers India, member of Electron Device Failure Analysis Society (EDFAS) USA and ESD Association USA.  He served as Editor of Journal of Semiconductor Technology and Science (Korea) during 2001-2003 and is an Editorial board member of Microelectronics Reliability journal (UK). He served as Guest Editor to IEEE Transactions Devices Materials and Reliability and edited or co-edited of 4 conference proceedings.  He was Technical Chair IEEE International Symposium on Physical and Failure Analysis of ICs (IPFA) in 1995 and 1997 and General Chair of IPFA in 1999.  He was IEEEIEDST General Chair in 2009. He has been in the technical program committees of ESREF, IRPS, EPTC, MIEL, ICEE and EOS/ESD Symposium.  Currently he is the Editor-in Chief of IEEE EDS Newsletter and serves as a member of IEEE EDS Technical Committee on Electronic Materials.  He is a Distinguished Lecturer of IEEE Electron Devices Society.


       

  • Vice President of Publications and Products

    • Hisayo S. Momose
       - Fellow
      Hisayo S.  Momose portrait placeholder
      Yokohama National University
      79-5 Tokiwadai, Hodogaya-ku
      Yokohama 240-8501
      Japan
      Phone 1:
      +81 45 339 3213

      Fax:
      +81 45 339 4456
  • Vice President of Membership and Services

    • Tian-Ling Ren
       - Senior Member
      Tian-Ling  Ren portrait
      Tsinghua University
      Institute of Microelectronics
      Beijing 100084
      China
      Phone 1:
      +86 10 6278 9151

      Phone 2
      Ext. 311

      Lecture Topics: New Material Based Micro/Nano Devices Flexible Electronics Novel Acoustic and RF Devices Non-volatile Memory


      Biography: Tian-Ling Ren received his Ph.D. degree in solid-state physics from Department of Modern Applied Physics, Tsinghua University, China in 1997.


      He is full professor of Institute of Microelectronics, Tsinghua University since 2003. He has been a visiting professor at Electrical Engineering Department, Stanford University from 2011 to 2012.


      For these years, Prof. Ren’s research mainly focused on novel micro/nano electronic devices and key technologies, including nonvolatile memories (RRAM, FeRAM), RF devices (resonator, inductor), sensors, and MEMS. Prof. Ren’s main contributions are that he has developed the new integration methods for novel material based micro/nano device and circuit applications. For examples, he proposed the RRAM structure with integration of single layer graphene, which can drastically decrease the power consumption of the device; he developed the ferroelectric thin film based integrated acoustic devices; he also proposed the graphene sound source devices for the first time; and he realized the high quality ultra-flexible structured RF resonators with very promising applications. He has published more than 300 journal and conference papers. He has more than 40 patents.


      He has been an Elected Member at Large, and Distinguished Lecturer of IEEE Electron Devices Society. He is also Council Member of Chinese Society of Micro/Nano Technology. For these years, Prof. Ren has been the technical committee member for several leading international conferences, including International Electron Device Meeting (IEDM), and Device Research Meeting (DRC). He is also editorial board member of Scientific Reports (Nature Publishing Group).

  • Vice President of Technical Committees and Meetings

    • Ravi M. Todi
       - MOS Devices and Technology
      Ravi M.  Todi portrait
      Fellow
      Director, Product Management
      GlobalFoundries
      2600 Great America Way
      Santa Clara, CA 95054
      USA
      Phone 1:
      408-462-4926

      Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.