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Publications and Products Committee

  • Vice President of Publications and Products

    • Bin Zhao
       - Fellow
      Bin Zhao portrait
      Fairchild Semiconductor
      32 Discovery, Suite 100
      Irvine, CA 92618
      USA
      Phone 1:
      +1 949 266 6800

      Fax:
      +1 614 737 6800

      Lecture Topics:


      > Analog/Mixed-Signal/RF IC and Enabling Technologies
      > High Performance VLSI Interconnect

  • Publications and Products Committee Members

    • Joachim N. Burghartz
      Joachim N. Burghartz portrait
      Institute for Microelectronics Stuttgart (IMS CHIPS)
      Director and Chairman of the Board
      StuttgartGermany
      Phone 1:
      +49 0 711 21855 200

      Fax:
      +49 0 711 21855 222
      Lecture Topics: Ultra-Thin Chips – A New Paradigm in Silicon Technology; High-Dynamic Range CMOS Imagers and Their Applications
    • Mansun J. Chan
      Mansun J.  Chan portrait
      Hong Kong University of Science & Tech.
      Dept. of Electronic & Computer Eng.
      Clear Water Bay, Kowloon, Hong Kong
      Phone 1:
      +852 2358 8519

      Fax:
      +852 2358 1485
      Email 1:
      mchan@ust.hk

      Lecture Topics:  1) Nano-device physics and technology 2) Device modelling and circuit simulation 3) Non-volatile memory technology 4) Bio-sensors and circuits MANSUN CHAN received his MS and Ph.D. from the University of California at Berkeley. He is currently a Professor at the Department of Electronic and Computer Engineering of the Hong Kong University of Science and Technology (HKUST). His main research covers novel silicon device fabrication and modeling. In particular, he is one of the key developers of the BSIM model series that have been selected to be the industrial standard models for conventional and SOI MOSFETs used by the semiconductor industry worldwide. Prof. Chan has served IEEE in various capacities and he is currently a Distinguished Lecturer of IEEE EDS.


      Biography:  Mansun Chan (S’92-M’95-SM’01-F’13) received Ph.D. degrees from the UC, Berkeley in 1995. He is one of the major contributors to the unified BSIM model for SPICE, which has been accepted by most US companies and the Compact Model Council (CMC) as the first industrial standard MOSFET model. In January 1996, he has joined the EEE faculty at Hong Kong University of Science and Technology.  After that, he developed a SOI MOSFET model, which has been adopted by UC Berkeley as the core of the BSIMSOI model.  Between July 2001 and December 2002, he was a Visiting Professor at University of California at Berkeley and the Co-director of the BSIM program.  In this capacity, he has successfully completed the technology transfer of BSIM3SOI to be the first industrial standard SOI MOSFET model.  In addition to device modeling, Prof. Chan’s current research interests also include nano-transistor fabrication technology, carbon-based device physics, printable transistors, 3D integrated circuits, bio-sensors and cloud computing based simulation platform.  He is current working on an interactive modeling and online simulation (i-MOS) platform to facilitate the interactions between model developers and circuit designers using the Internet technology.


      Prof. Chan is a recipient of the UC Regents Fellowship, Golden Keys Scholarship for Academic Excellence, SRC Inventor Recognition Award, Rockwell Research Fellowship, R&D 100 award (for the BSIM3v3 project), Teaching Excellence Appreciation award, Distinguished Teaching Award and the Shenzhen City Technology Innovation Award by the Chinese Government. He is a Fellow and Distinguished Lecturer of IEEE.

    • Amitava Chatterjee
      Amitava Chatterjee portrait placeholder
      University of Texas at Dallas
      800 W Campbell Rd
      Richardson, TX 75080-3021
      Phone 1:
      214-856-9198

    • Simon Deleonibus
       - Fellow
      Simon  Deleonibus portrait placeholder
      Chief Scientist/Directeur Scientifique
      Silicon Technologies
      CEA/LETI, MINATEC
      17 rue des Martyrs
      Grenoble Cedex 38054
      France
      Phone 1:
      +33 438 785973

      Fax:
      33 438 785183
      Lecture Topics: Nanoelectronics CMOS and Memories Integration and Scaling, Hetrogeneous Integration of Devices and Materials, M/NEMS, 3D integration, Bonding and Integration, More Moore, More than Moore, Beyond CMOS devices
    • Giovanni Ghione
      Giovanni Ghione portrait placeholder
      Politecnico di Torino
      Department of Electronics and Telecommunications
      Corso Duca degli Abruzzi 24
      Torino 10129
      Italy
      Phone 1:
      +39 011 564 4064

      Fax:
      +39 011 564 4099
    • Fernando Guarin
       - Fellow
      Fernando Guarin portrait
      Global Foundries
      Lecture Topics: Reliability and scaling of CMOS, SiGe Reliability  
    • Meikei Ieong
       - Fellow
      Meikei Ieong portrait placeholder
      TSMC Europe

      Biography: Meikei Ieong (SM’01) received the B.S. degree in electrical engineering from the National Taiwan University, Taipei, Taiwan, in 1991 and the M.S. and Ph.D. degrees in electrical and computer engineering from the University of Massachusetts, Amherst, in 1993 and 1996, respectively. He also received an MBA degree from the Sloan Fellows Program of Massachusetts Institute of Technology in 2013.


      Meikei is currently Vice-President of TSMC Europe. He was program director of TSMC’s 28nm High-Performance and Mobile Technologies. Prior to that he held various engineering and management positions at IBM including senior manager at IBM TJ. Watson Research Center, Yorktown, NY. He’s recipient of IBM Technical Achievement and Corporate awards and was elected as a Master Inventor at IBM Research.


      He held an adjunct associate professor position with the Department of Electrical Engineering from the Columbia University, NY in 2001. He was General Chairman of the IEEE International Electron Devices Meeting (IEDM). He has served as an editor for the IEEE Transaction on Electron Devices since 2010 and as chair of the IEEE EDS Education Award committee since 2013. He has Published more than one hundred papers in referred journals and conference proceedings and more than eighty patents. He also speaks frequently at international conferences and seminars.

    • Shuji Ikeda
      Shuji  Ikeda portrait
      Tei Solutions, Co. Ltd.
      NIRC
      16-1 Onogawa
      Tsukuba, Ibaraki 305-8
      Japan
      Phone 1:
      +81 29 849 1276

      Fax:
      +81 29 849 1533

      Shuji Ikeda (M’91-SM’02-F’04) received the B.S. degree in Physics, PhD. in Electrical Engineering from Tokyo Institute of Technology, Tokyo, Japan in 1978 and 2003 respectively and the M.S. degree in Electrical Engineering from Princeton University, Princeton, New Jersey, USA in 1987. He joined Semiconductor and Integrated Circuit Group, Hitachi ltd., Tokyo, Japan in 1978, where he was engaged in research and development of state of the art SRAM process and devices. He was also working on developing process technology for LOGIC, embedded memories, and CMOS power RF devices and on transferring technology to mass production line. He invented some of the outstanding structures for SRAM. He pioneered process to implement new materials in mass production, including W-polycide, Al-Cu-Si in 1984 and in-situ phosphorus-doped-polysilicon in 1990. He is the first to realize Lightly Doped Drain (LDD) in production to suppress Hot Carrier Injection in 1984. He also firstly implemented polyimide coat of the chip to immune SER caused by alpha particle from the resin covers the chip. In October 2000, he joined Trecenti Technologies Inc. He developed new process scheme with aggressive reduction of process time and suitable for single-wafer processing. That achieved less than 0.25days/layer cycle time. In April 2005, he joined ATDF at Austin Texas, as a Director of Technology. Where he develops various kinds of technologies includes scaled CMOS, non-classical CMOS, new materials and tools. He established tei Technology LLC in May 2008, Omni Water Solutions LLC, in 2009 at Austin Texas. He started tei Solutions Inc in Tsukuba, Ibaraki, Japan in 2010, where, he manages R&D foundry developing new devices, process technologies for VLSIs. He also integrates emerging technology onto semiconductor manufacturing technology to create innovative products/businesses. Due to his contributions to 200 MHz RISC microprocessor, he got 1999 R&D 100 Award. He served as subcommittee and executive committee member of IEDM from 1993 to 2002. He introduced Manufacturing Session in 1998 and chaired IEDM in 2002. He was a member of EDS Administrative Committee from 2005 to 2010. He was a technical program member for VLSI Technology Symposium in 2007 and 2008. He serves as a chairman of VLSI committee of EDS from 2009 and AdHoc Committee on Asia EDS Conference from 2014.

    • Adrian M. Ionescu
      Adrian M.  Ionescu portrait placeholder
      Ecole Polytechnique FŽdŽrale de Lausanne
      Nanolab
      ELB335, Station 11
      Lausanne CH-1015
      Switzerland
      Phone 1:
      +41 21 693 3978

      Fax:
      + 41 21 693 3640
    • Renuka P. Jindal
       - Fellow
      Renuka P. Jindal portrait
      University of Louisiana at Lafayette
      Madison Hall
      Room 248J
      131 Rex Street, PO Box 43890
      Lafayette, LA 70504-3890
      USA
      Phone 1:
      +1 337 482 6570

      Fax:
      +1 337 482 6687

      Renuka P. Jindal (S’77–M’81–SM’85–F’91) received the Ph.D. degree in electrical engineering from the University of Minnesota, Minneapolis, MN, USA, in 1981, with minors in physics and materials science.


      Upon graduation, he joined Bell Laboratories, Murray Hill, NJ, USA. His over 22 years of experience at Bell Laboratories bridged both technical and administrative roles. On the technical side, he worked in all three areas of devices, circuits, and systems. Highlights include fundamental studies of noise behavior of MOS devices with channel lengths in the few hundred nanometers regime. His contributions led to almost an order of magnitude reduction in the device noise. Over the years, this has made MOS the technology of choice for broad-band fiber-optics and narrowband wireless base station and terminal applications, including cell phones and pagers. He also designed and demonstrated high-performance single-chip gigahertz-band radio frequency (RF) integrated circuits (ICs) for AT&T’s Metrobus Lightwave Project. He researched the physics of carrier multiplication and invented techniques for ultra-low noise signal amplification and detection in terms of novel devices and circuits based upon a new principle of random multiplication and optoelectronic integration. On the administrative side, he developed and managed significant extramural funding from federal agencies and independent Lucent Technologies business units. He was solely responsible for developing and deploying a corporate-wide manufacturing test strategy in relation to contract manufacturing for Lucent Technologies. He also established and taught RF IC design courses at Rutgers University, Piscataway, NJ, USA. In 2002, he accepted the position as the William and Mary Hansen Hall Board of Regents Eminent Scholar Endowed Chair at the University of Louisiana, Lafayette, LA, USA. There, he continues to teach and undertake fundamental research in the areas of random processes, wireless and lightwave devices, circuits, and systems. He is also very active in professional activities, in conjunction with the IEEE, and is an Electron Devices Society Distinguished Lecturer. He has also participated in ABET activities as an evaluator for electrical engineering programs at institutions in the United States.


      Dr. Jindal was a recipient of the Distinguished Technical Staff Award from Bell Labs in 1989. In December 2000, he received the IEEE Third Millennium Medal. From 1987 to 1989, he served as an editor of the Solid-State Device Phenomena Section of the IEEE Transactions on Electron Devices. From 1990 to 2000, he was the Editor-in-Chief of the IEEE Transactions on Electron Devices. From 2000 to 2008, he served as the Vice President of Publications for the IEEE electron Devices Society (EDS). In December 2007, he was voted in as the President-Elect of EDS. From 2010 to 2011, he served as the President of the IEEE Electron Devices Society. Now, he continues to actively be involved with the society as the Senior Past President.


      Lecture Topics:


      1. Discreteness of matter - the ultimate scaling challenge
      2. Milli-bits to Tera-bits per second and Beyond - Over 60 years of Innovation
      3. Nano-FET fluctuation physics
      4. Material, Device, Circuit and System Considerations for almost noise-free signal detection

    • Baruch Levush
       - Dr.
      Baruch  Levush portrait placeholder
      Naval Research Laboratory
      4555 Overlook Ave. SW
      Washington, DC 20375
      USA
      Phone 1:
      +1 (202) 767 3693

      Fax:
      +1 202 767 1280
    • Anthony Muscat
      Anthony Muscat portrait
      Professor
      University of Arizona
      1133 E. James Rogers Way
      Harshbarger Bldg., Room 134
      Tuscon, AZ 85721
      USA
      Phone 1:
      520-626-6580

      Fax:
      520-626-5397

      T-SM Subject Category: Environment Safety and Health


      Research Areas: thin film deposition, thin film etching, atomic layer deposition, III-V materials, semiconductor surface preparation and cleaning


      Professional Memberships: IEEE, AIChE, MRS, AAAS, ACS, ECS, APS, AVS


      Biography: Anthony J. Muscat received the B.S. degree (1983) from the University of California, Davis and the M.S. (1984) and Ph.D. (1993) degrees from Stanford University all in chemical engineering. He is currently a professor and chair of the Department of Chemical and Environmental Engineering at the University of Arizona in Tucson. His research interests are in the surface chemistry of electronic materials and the synthesis and self-assembly of II-VI quantum dots and metal nanoparticles. He works in the areas of atomic layer deposition, atomic layer etching, and surface preparation and cleaning for thin film growth. He is currently the Editor-in-Chief of the Transactions on Semiconductor Manufacturing. He is also serving as the Program Chair for the American Vacuum Society International Symposium in 2015.

    • Arokia Nathan
       - Fellow
      Arokia  Nathan portrait placeholder
      Cambridge University Centre for Advanced Photonics and Electronics
      Electrical Engineering Division
      9, JJ Thomson Avenue
      Cambridge CB3 0FA
      United Kingdom
      Lecture Topic: Large Area Electronics, Transparent Electronics, Displays, Imaging, Nano-Bio-Systems
    • Anthony S. Oates
      Anthony S.  Oates portrait placeholder
      TSMC
      Science Based Industrial Park
      9, Creation Rd. 1,
      Hsinchu 300-77
      Taiwan
      Phone 1:
      +886 3 5666090

      Fax:
      +886 3 5781064
    • M.K. Radhakrishnan
       - Senior Member
      M.K.  Radhakrishnan portrait
      NanoRel Technical Consultants
      273, 18D Main, 6th Block
      Koramangla, Bangalore 560095
      India
      Phone 1:
      +91 80 25630695

      Phone 2
      +91 9447663869

      Lecture Topics: 1. Physical Analysis Challenges and Interface Physics Studies in Silicon Nano Devices 2.  Building in Reliability in Devices through Analysis and Study of Failure Mechanisms.


      Biography:  M.K. Radhakrishnan (M’82-SM’94) received B.Sc from Kerala University, India in 1972, M.Sc in Solid State electronics from Sardar Patel University, India in 1975 and Ph.Ddegree in Semiconductor Physics from Cochin University of Science and Technology in 1981.


      He is currently Directorof NanoRel Technical Consultants Singapore from 2004.  He has been with Indian Space Research Organization till 1990. From 1991-1993 he was with ST Microelectronics Singapore. From 1993 to 2001 he was with Institute of Microelectronics Singapore, where he pioneered the setting up of a full-fledged device failure analysis laboratory.  From 1994 to 2004 he served as adjunct professor at National University of Singapore. His current research interests include analysis and reliability in nano-electronic devices and interface physics studies.


      Dr. Radhakrishnan is a fellow of Institution of Electrical and Telecommunication Engineers India, member of Electron Device Failure Analysis Society (EDFAS) USA and ESD Association USA.  He served as Editor of Journal of Semiconductor Technology and Science (Korea) during 2001-2003 and is an Editorial board member of Microelectronics Reliability journal (UK). He served as Guest Editor to IEEE Transactions Devices Materials and Reliability and edited or co-edited of 4 conference proceedings.  He was Technical Chair IEEE International Symposium on Physical and Failure Analysis of ICs (IPFA) in 1995 and 1997 and General Chair of IPFA in 1999.  He was IEEEIEDST General Chair in 2009. He has been in the technical program committees of ESREF, IRPS, EPTC, MIEL, ICEE and EOS/ESD Symposium.  Currently he is the Editor-in Chief of IEEE EDS Newsletter and serves as a member of IEEE EDS Technical Committee on Electronic Materials.  He is a Distinguished Lecturer of IEEE Electron Devices Society.


       

    • Tian-Ling Ren
       - Senior Member
      Tian-Ling  Ren portrait
      Tsinghua University
      Institute of Microelectronics
      Beijing 100084
      China
      Phone 1:
      +86 10 6278 9151

      Phone 2
      Ext. 311

      Lecture Topics: New Material Based Micro/Nano Devices Flexible Electronics Novel Acoustic and RF Devices Non-volatile Memory


      Biography: Tian-Ling Ren received his Ph.D. degree in solid-state physics from Department of Modern Applied Physics, Tsinghua University, China in 1997.


      He is full professor of Institute of Microelectronics, Tsinghua University since 2003. He has been a visiting professor at Electrical Engineering Department, Stanford University from 2011 to 2012.


      For these years, Prof. Ren’s research mainly focused on novel micro/nano electronic devices and key technologies, including nonvolatile memories (RRAM, FeRAM), RF devices (resonator, inductor), sensors, and MEMS. Prof. Ren’s main contributions are that he has developed the new integration methods for novel material based micro/nano device and circuit applications. For examples, he proposed the RRAM structure with integration of single layer graphene, which can drastically decrease the power consumption of the device; he developed the ferroelectric thin film based integrated acoustic devices; he also proposed the graphene sound source devices for the first time; and he realized the high quality ultra-flexible structured RF resonators with very promising applications. He has published more than 300 journal and conference papers. He has more than 40 patents.


      He has been an Elected Member at Large, and Distinguished Lecturer of IEEE Electron Devices Society. He is also Council Member of Chinese Society of Micro/Nano Technology. For these years, Prof. Ren has been the technical committee member for several leading international conferences, including International Electron Device Meeting (IEDM), and Device Research Meeting (DRC). He is also editorial board member of Scientific Reports (Nature Publishing Group).

    • Jeffrey J. Welser
      Jeffrey J.  Welser portrait placeholder
      IBM Almaden Research Center
      650 Harry Road
      San Jose, CA 95120-6099
      USA
      Phone 1:
      +1 408 927 1017

      Fax:
      +1 408 927 3616
    • Paul K.L. Yu
       - Fellow
      Paul K.L.  Yu portrait
      University of California at San Diego
      ECE Department, MS 0407
      9500 Gilman Dr., Eng. Bldg. Unit 1, Room 3604
      La Jolla, CA 92093-0407
      USA
      Phone 1:
      +1 858 534 6180

      Fax:
      +1 858 534 0556
      Lecture Topics: Recent Advances in Photonic Devices for RF/Wireless, Semiconductor Wafer Bonding Technology for Device Integration