Publications and Products Committee

  • Vice President of Publications and Products

    • Hisayo S. Momose
       - Fellow
      Hisayo S.  Momose portrait placeholder
      Yokohama National University
      79-5 Tokiwadai, Hodogaya-ku
      Yokohama 240-8501
      Phone 1:
      +81 45 339 3213

      +81 45 339 4456
  • Publications and Products Committee Members

    • Mikael Östling
       - Fellow
      Mikael  Östling portrait
      KTH, Royal Institute of Technology
      Dept of Microelectronics and InfoTech
      Electrum 229
      Kista SE-164 40
      Phone 1:
      +46 8 790 4301

      +46 8 752 7850

      Mikael Östling (M’ 85- F’04) received his MSc and the PhD degrees from Uppsala University, Sweden. He holds a position as professor in solid state electronics at KTH, Royal Institute of Technology in Stockholm, Sweden. He is currently department head of Integrated Devices and Circuits and was the dean of the School of Information and Communication Technology, KTH, between 2004–12. Östling was a senior visiting Fulbright Scholar at Stanford University, and a visiting professor with the University of Florida, Gainesville. In 2005 he co-founded the company TranSiC, acquired in full by Fairchild Semiconductor 2011. He was awarded the first ERC grant for advanced investigators. His research interests are nanoscaled Si and Ge device technologies and emerging 2D materials, as well as device technology for wide bandgap semiconductors for high power / high temperature applications. He has supervised 35 PhD theses work and co -authored about 500 scientific papers published in international journals and conferences. Mikael Östling was an editor of the IEEE Electron Device Letters 2005-2014 and appointed vice president of EDS since 2014. Mikael is a Fellow of the IEEE.

      Lecture Topics: SiC Device Technology for energy efficiency and for high temperature operation Silicon Nanoscaled Device Technology

    • Mansun J. Chan
      Mansun J.  Chan portrait
      Hong Kong University of Science and Tech.
      Dept. of Electronic and Computer Eng.
      Clear Water Bay, Kowloon, Hong Kong
      Phone 1:
      +852 2358 8519

      +852 2358 1485
      Email 1:

      Lecture Topics:  1) Nano-device physics and technology 2) Device modelling and circuit simulation 3) Non-volatile memory technology 4) Bio-sensors and circuits MANSUN CHAN received his MS and Ph.D. from the University of California at Berkeley. He is currently a Professor at the Department of Electronic and Computer Engineering of the Hong Kong University of Science and Technology (HKUST). His main research covers novel silicon device fabrication and modeling. In particular, he is one of the key developers of the BSIM model series that have been selected to be the industrial standard models for conventional and SOI MOSFETs used by the semiconductor industry worldwide. Prof. Chan has served IEEE in various capacities and he is currently a Distinguished Lecturer of IEEE EDS.

      Biography:  Mansun Chan (S’92-M’95-SM’01-F’13) received Ph.D. degrees from the UC, Berkeley in 1995. He is one of the major contributors to the unified BSIM model for SPICE, which has been accepted by most US companies and the Compact Model Council (CMC) as the first industrial standard MOSFET model. In January 1996, he has joined the EEE faculty at Hong Kong University of Science and Technology.  After that, he developed a SOI MOSFET model, which has been adopted by UC Berkeley as the core of the BSIMSOI model.  Between July 2001 and December 2002, he was a Visiting Professor at University of California at Berkeley and the Co-director of the BSIM program.  In this capacity, he has successfully completed the technology transfer of BSIM3SOI to be the first industrial standard SOI MOSFET model.  In addition to device modeling, Prof. Chan’s current research interests also include nano-transistor fabrication technology, carbon-based device physics, printable transistors, 3D integrated circuits, bio-sensors and cloud computing based simulation platform.  He is current working on an interactive modeling and online simulation (i-MOS) platform to facilitate the interactions between model developers and circuit designers using the Internet technology.

      Prof. Chan is a recipient of the UC Regents Fellowship, Golden Keys Scholarship for Academic Excellence, SRC Inventor Recognition Award, Rockwell Research Fellowship, R&D 100 award (for the BSIM3v3 project), Teaching Excellence Appreciation award, Distinguished Teaching Award and the Shenzhen City Technology Innovation Award by the Chinese Government. He is a Fellow and Distinguished Lecturer of IEEE.

    • Cor L. Claeys
       - Fellow
      Cor L. Claeys portrait
      Kapeldreef 75
      Leuven B-3001
      Phone 1:
      +32 16 28 1328

      +32 16 28 1214
      Lecture Topics: * Low Frequency Noise in state of the art and emerging semiconductor technologies * Radiation Hardness of State-of-the-art Si and Ge-Based CMOS Technologies * Contact Technology Schemes for Advanced Ge and III-V CMOS Technologies * Trends and Challenges in Micro- and Nanoelectronics for the Next Decade
    • Simon Deleonibus
       - Fellow
      Simon  Deleonibus portrait placeholder
      Chief Scientist/Directeur Scientifique
      Silicon Technologies
      17 rue des Martyrs
      Grenoble Cedex 38054
      Phone 1:
      +33 438 785973

      33 438 785183
      Lecture Topics: Nanoelectronics CMOS and Memories Integration and Scaling, Hetrogeneous Integration of Devices and Materials, M/NEMS, 3D integration, Bonding and Integration, More Moore, More than Moore, Beyond CMOS devices
    • Giovanni Ghione
       - Editor-in-Chief
      Giovanni Ghione portrait
      Politecnico di Torino
      Department of Electronics and Telecommunications
      Corso Duca degli Abruzzi 24
      Torino 10129
      Phone 1:
      +39 011 090 4064

      +39 011 090 4099
      Giovanni Ghione graduated cum laude in Electronic Engineering from Politecnico di Torino, Torino Italy in 1981. He was Assistant Professor in Electromagnetic Fields since 1983, Associate Professor in Circuit Theory with Politecnico di Milano, Milano Italy since 1987, and finally Full Professor in Electronics since 1990, first with University of Catania, then again with Politecnico di Torino. His research activity has been mainly concerned with high-frequency electronics and optoelectronics. He has contributed to the physics-based modelling of compound semiconductor devices, with particular interest in the numerical noise modeling in the small- and large-signal regimes, in the thermal modeling of devices and integrated circuits, and in the modeling of widegap semiconductors devices and materials. He has also done research in the field of microwave electronics, with contributions in the modeling of passive elements, in particular coplanar components, and in the design of power MMICs. Prof. Ghione was actively engaged since 1985 in research on optoelectronic devices, with application to the modeling and design of near and far-IR photodetectors, electrooptic and electroabsorption modulators, and GAN-based LEDs. Prof. Ghione has authored or co-authored more than 300 research papers on the above subjects and five books. He is an IEEE Fellow (class 2007). He has been a member of the QPC subcommitee of IEDM in 1997-1998 and in 2006-2007 and Chair in 2008; in 2009-2010 he was the EU Arrangement Co-Chair of IEDM. From 2010 to 2015 he has been chair of the EDS Committee on Compound Semiconductor Devices and Circuits. He has been Chair of the GAAS2003 conference and he has been subcommittee chair in several SCs of the European Microwave Week. He was President of the Library System of Politecnico from 1997 to 2007. From 2007 to 2015 he was the Head of the Department of Electronics and Telecommunications of Politecnico di Torino.
    • Meikei Ieong
       - Fellow
      Meikei Ieong portrait placeholder
      Hong Kong Applied Science and Technology Research Institute
      Chief Technology Officer

      Biography: Meikei Ieong (SM’01) received the B.S. degree in electrical engineering from the National Taiwan University, Taipei, Taiwan, in 1991 and the M.S. and Ph.D. degrees in electrical and computer engineering from the University of Massachusetts, Amherst, in 1993 and 1996, respectively. He also received an MBA degree from the Sloan Fellows Program of Massachusetts Institute of Technology in 2013.

      Meikei is currently Vice-President of TSMC Europe. He was program director of TSMC’s 28nm High-Performance and Mobile Technologies. Prior to that he held various engineering and management positions at IBM including senior manager at IBM TJ. Watson Research Center, Yorktown, NY. He’s recipient of IBM Technical Achievement and Corporate awards and was elected as a Master Inventor at IBM Research.

      He held an adjunct associate professor position with the Department of Electrical Engineering from the Columbia University, NY in 2001. He was General Chairman of the IEEE International Electron Devices Meeting (IEDM). He has served as an editor for the IEEE Transaction on Electron Devices since 2010 and as chair of the IEEE EDS Education Award committee since 2013. He has Published more than one hundred papers in referred journals and conference proceedings and more than eighty patents. He also speaks frequently at international conferences and seminars.

    • Shuji Ikeda
      Shuji  Ikeda portrait
      Tei Solutions, Co. Ltd.
      16-1 Onogawa
      Tsukuba, Ibaraki 305-8
      Phone 1:
      +81 29 849 1276

      +81 29 849 1533

      Shuji Ikeda (M’91-SM’02-F’04) received the B.S. degree in Physics, PhD. in Electrical Engineering from Tokyo Institute of Technology, Tokyo, Japan in 1978 and 2003 respectively and the M.S. degree in Electrical Engineering from Princeton University, Princeton, New Jersey, USA in 1987. He joined Semiconductor and Integrated Circuit Group, Hitachi ltd., Tokyo, Japan in 1978, where he was engaged in research and development of state of the art SRAM process and devices. He was also working on developing process technology for LOGIC, embedded memories, and CMOS power RF devices and on transferring technology to mass production line. He invented some of the outstanding structures for SRAM. He pioneered process to implement new materials in mass production, including W-polycide, Al-Cu-Si in 1984 and in-situ phosphorus-doped-polysilicon in 1990. He is the first to realize Lightly Doped Drain (LDD) in production to suppress Hot Carrier Injection in 1984. He also firstly implemented polyimide coat of the chip to immune SER caused by alpha particle from the resin covers the chip. In October 2000, he joined Trecenti Technologies Inc. He developed new process scheme with aggressive reduction of process time and suitable for single-wafer processing. That achieved less than 0.25days/layer cycle time. In April 2005, he joined ATDF at Austin Texas, as a Director of Technology. Where he develops various kinds of technologies includes scaled CMOS, non-classical CMOS, new materials and tools. He established tei Technology LLC in May 2008, Omni Water Solutions LLC, in 2009 at Austin Texas. He started tei Solutions Inc in Tsukuba, Ibaraki, Japan in 2010, where, he manages R&D foundry developing new devices, process technologies for VLSIs. He also integrates emerging technology onto semiconductor manufacturing technology to create innovative products/businesses. Due to his contributions to 200 MHz RISC microprocessor, he got 1999 R&D 100 Award. He served as subcommittee and executive committee member of IEDM from 1993 to 2002. He introduced Manufacturing Session in 1998 and chaired IEDM in 2002. He was a member of EDS Administrative Committee from 2005 to 2010. He was a technical program member for VLSI Technology Symposium in 2007 and 2008. He serves as a chairman of VLSI committee of EDS from 2009 and AdHoc Committee on Asia EDS Conference from 2014.

    • Hiroshi Iwai
       - Fellow
      Hiroshi  Iwai portrait
      Institute of Innovative Research Tokyo
      Institute of Technology
      4259 Nagatsuta, Midori-ku
      Yokohama 226-8502
      Phone 1:
      +81 45 924 5471

      +81 45 924 5584

      Lecture Topics: Future of Nano CMOS Technology

    • Tsu-Jae King Liu
       - Editor-in-Chief
      Tsu-Jae King Liu portrait
      University of California at Berkeley
      253 Cory Hall #1770
      Berkeley, CA 94720-1770
      Phone 1:
      +1 510 642 2689

      +1 510 642 2739
      Tsu-Jae King Liu received the B.S., M.S., and Ph.D. degrees in Electrical Engineering from Stanford University. From 1992 to 1996 she was a Member of Research Staff at the Xerox Palo Alto Research Center (Palo Alto, CA). In August 1996 she joined the faculty of the University of California, Berkeley, where she is currently the TSMC Distinguished Professor in Microelectronics, and Chair of the Department of Electrical Engineering and Computer Sciences.
      Dr. Liu's research awards include the DARPA Significant Technical Achievement Award (2000) for development of the FinFET, the IEEE Kiyo Tomiyasu Award (2010) for contributions to nanoscale MOS transistors, memory devices, and MEMs devices, the Intel Outstanding Researcher in Nanotechnology Award (2012), and the Semiconductor Industry Association Outstanding Research Award (2014). She has authored or co-authored close to 500 publications and holds over 90 U.S. patents, and is a Fellow of the IEEE. Her research activities are presently in advanced materials, process technology and devices for energy-efficient electronics.
    • Anthony Muscat
      Anthony Muscat portrait
      University of Arizona
      1133 E. James Rogers Way
      Harshbarger Bldg., Room 134
      Tuscon, AZ 85721
      Phone 1:


      T-SM Subject Category: Environment Safety and Health

      Research Areas: thin film deposition, thin film etching, atomic layer deposition, III-V materials, semiconductor surface preparation and cleaning

      Professional Memberships: IEEE, AIChE, MRS, AAAS, ACS, ECS, APS, AVS

      Biography: Anthony J. Muscat received the B.S. degree (1983) from the University of California, Davis and the M.S. (1984) and Ph.D. (1993) degrees from Stanford University all in chemical engineering. He is currently a professor and chair of the Department of Chemical and Environmental Engineering at the University of Arizona in Tucson. His research interests are in the surface chemistry of electronic materials and the synthesis and self-assembly of II-VI quantum dots and metal nanoparticles. He works in the areas of atomic layer deposition, atomic layer etching, and surface preparation and cleaning for thin film growth. He is currently the Editor-in-Chief of the Transactions on Semiconductor Manufacturing. He is also serving as the Program Chair for the American Vacuum Society International Symposium in 2015.

    • Arokia Nathan
       - Fellow
      Arokia  Nathan portrait
      Cambridge University Centre for Advanced Photonics and Electronics
      Electrical Engineering Division
      9, JJ Thomson Avenue
      Cambridge CB3 0FA
      United Kingdom of Great Britain and Northern Ireland
      Phone 1:
      +44 1223 748302

      +44 1223 748322
      Arokia Nathan holds the Professorial Chair of Photonic Systems and Displays in the Department of Engineering, Cambridge University. He received his PhD in Electrical Engineering from the University of Alberta. Following post-doctoral years at LSI Logic Corp., USA and ETH Zurich, Switzerland, he joined the University of Waterloo where he held the DALSA/NSERC Industrial Research Chair in sensor technology and subsequently the Canada Research Chair in nano-scale flexible circuits. He was a recipient of the 2001 NSERC E.W.R. Steacie Fellowship. In 2006, he moved to the UK to take up the Sumitomo Chair of Nanotechnology at the London Centre for Nanotechnology, University College London, where he received the Royal Society Wolfson Research Merit Award. He has held Visiting Professor appointments at the Physical Electronics Laboratory, ETH Zürich and the Engineering Department, Cambridge University, UK. He has published over 500 papers in the field of sensor technology and CAD, and thin film transistor electronics, and is a co-author of four books. He has over 50 patents filed/awarded and has founded/co-founded four spin-off companies. He serves on technical committees and editorial boards in various capacities. He is a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK), Fellow of IEEE (USA), and an IEEE/EDS Distinguished Lecturer.
    • M.K. Radhakrishnan
       - Senior Member
      M.K.  Radhakrishnan portrait
      NanoRel Technical Consultants
      273, 18D Main, 6th Block
      Koramangla, Bangalore 560095
      Phone 1:
      +91 80 25630695

      Phone 2
      +91 9447663869

      Lecture Topics: 1. Physical Analysis Challenges and Interface Physics Studies in Silicon Nano Devices 2.  Building in Reliability in Devices through Analysis and Study of Failure Mechanisms.

      Biography:  M.K. Radhakrishnan (M’82-SM’94) received B.Sc from Kerala University, India in 1972, M.Sc in Solid State electronics from Sardar Patel University, India in 1975 and Ph.Ddegree in Semiconductor Physics from Cochin University of Science and Technology in 1981.

      He is currently Directorof NanoRel Technical Consultants Singapore from 2004.  He has been with Indian Space Research Organization till 1990. From 1991-1993 he was with ST Microelectronics Singapore. From 1993 to 2001 he was with Institute of Microelectronics Singapore, where he pioneered the setting up of a full-fledged device failure analysis laboratory.  From 1994 to 2004 he served as adjunct professor at National University of Singapore. His current research interests include analysis and reliability in nano-electronic devices and interface physics studies.

      Dr. Radhakrishnan is a fellow of Institution of Electrical and Telecommunication Engineers India, member of Electron Device Failure Analysis Society (EDFAS) USA and ESD Association USA.  He served as Editor of Journal of Semiconductor Technology and Science (Korea) during 2001-2003 and is an Editorial board member of Microelectronics Reliability journal (UK). He served as Guest Editor to IEEE Transactions Devices Materials and Reliability and edited or co-edited of 4 conference proceedings.  He was Technical Chair IEEE International Symposium on Physical and Failure Analysis of ICs (IPFA) in 1995 and 1997 and General Chair of IPFA in 1999.  He was IEEEIEDST General Chair in 2009. He has been in the technical program committees of ESREF, IRPS, EPTC, MIEL, ICEE and EOS/ESD Symposium.  Currently he is the Editor-in Chief of IEEE EDS Newsletter and serves as a member of IEEE EDS Technical Committee on Electronic Materials.  He is a Distinguished Lecturer of IEEE Electron Devices Society.


    • Tian-Ling Ren
       - Senior Member
      Tian-Ling  Ren portrait
      Tsinghua University
      Institute of Microelectronics
      Beijing 100084
      Phone 1:
      +86 10 6278 9151

      Phone 2
      Ext. 311

      Lecture Topics: New Material Based Micro/Nano Devices Flexible Electronics Novel Acoustic and RF Devices Non-volatile Memory

      Biography: Tian-Ling Ren received his Ph.D. degree in solid-state physics from Department of Modern Applied Physics, Tsinghua University, China in 1997.

      He is full professor of Institute of Microelectronics, Tsinghua University since 2003. He has been a visiting professor at Electrical Engineering Department, Stanford University from 2011 to 2012.

      For these years, Prof. Ren’s research mainly focused on novel micro/nano electronic devices and key technologies, including nonvolatile memories (RRAM, FeRAM), RF devices (resonator, inductor), sensors, and MEMS. Prof. Ren’s main contributions are that he has developed the new integration methods for novel material based micro/nano device and circuit applications. For examples, he proposed the RRAM structure with integration of single layer graphene, which can drastically decrease the power consumption of the device; he developed the ferroelectric thin film based integrated acoustic devices; he also proposed the graphene sound source devices for the first time; and he realized the high quality ultra-flexible structured RF resonators with very promising applications. He has published more than 300 journal and conference papers. He has more than 40 patents.

      He has been an Elected Member at Large, and Distinguished Lecturer of IEEE Electron Devices Society. He is also Council Member of Chinese Society of Micro/Nano Technology. For these years, Prof. Ren has been the technical committee member for several leading international conferences, including International Electron Device Meeting (IEDM), and Device Research Meeting (DRC). He is also editorial board member of Scientific Reports (Nature Publishing Group).

    • Jeffrey J. Welser
      Jeffrey J.  Welser portrait placeholder
      IBM Almaden Research Center
      650 Harry Road
      San Jose, CA 95120-6099
      Phone 1:
      +1 408 927 1017

      +1 408 927 3616