Publications Committee
Vice President of Publications
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Samar K. Saha- Senior Member
CAUSAPhone 1:
+1 719 255 5155
Phone 2
+ 1 408 966 5805Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology
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Publications Committee Members
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Joachim N. Burghartz
Institute for Microelectronics Stuttgart (IMS Chips)
Director & Chairman of the BoardStuttgartGermanyPhone 1:
+49 0 711 21855 200Fax:
+49 0 711 21855 222Email 1:
burghartz@ims-chips.deLecture Topics: RF Passives on Silicon - The Intended and the Unintended, Ultra-Thin Chips A New Paradigm in Silicon Technology, HDR CMOS Imagers and Their Applications, Lithography for the 34 nm Node and Beyond, More-Than-Moore - New Applications of Silicon Technology -
Amitava Chatterjee
PDF Solutions101 West Renner Road
Richardson, TX 75082Phone 1:
214-856-9198 -
John D. Cressler
Georgia Institute of Technology777 Atlantic Drive NW
Atlanta, GA 30332-0250
USAPhone 1:
+1 404 894 5161Email 1:
cressler@ece.gatech.edu -
Sean Cunningham
Intel Corp.
RN4-812200 Mission College Boulevard
Santa Clara, CA 95054
USAEmail 1:
sean.p.cunningham@intel.com -
Jamal Deen- Fellow
McMaster University
Dept. of Elec. & Comp. Eng., CRL Room 2261280 Main Street West
Hamilton, Ontario L8S 4K1
CanadaPhone 1:
+1 905 525 9140 Ext. 27137Fax:
+1 905 523 4407Email 1:
jamal@mcmaster.caLecture Topics:
1. Bioimagers for Health and Environmental Applications
2. Biosensors - Life at the intersection of Engineering and Sciences
3. Information and Communications Technologies for Ubiquitous Healthcare
4. Flexible Electronics - Opportunities and Challenges -
Giovanni Ghione
Politecnico di Torino
Dipartiment di ElettronicaCorso Duca degli Abruzzi 24
Torino 10129
ItalyPhone 1:
+39 011 564 4064Fax:
+39 011 564 4099Email 1:
giovanni.ghione@polito.it -
Fernando Guarin- Fellow
IBM Microelectronics
B-330C-1R23, Zip/20A2070 Route 52
Hopewell Junction, NY 12533
USAEmail 1:
guarinf@us.ibm.comLecture Topics: Reliability and scaling of CMOS, SiGe Reliability -
Shuji Ikeda
Tei Solutions, Co. Ltd.
NIRC16-1 Onogawa
Tsukuba, Ibaraki 305-8
JapanPhone 1:
+81 29 849 1276Fax:
+81 29 849 1533 -
Adrian M. Ionescu
Ecole Polytechnique FŽdŽrale de Lausanne
NanolabELB335, Station 11
Lausanne CH-1015
SwitzerlandPhone 1:
+41 21 693 3978Fax:
+ 41 21 693 3640Email 1:
adrian.ionescu@epfl.ch -
Renuka P. Jindal- Fellow
University of Louisiana at Lafayette
Madison HallRoom 248J
131 Rex Street, PO Box 43890
Lafayette, LA 70504-3890
USAPhone 1:
+1 337 482 6570Fax:
+1 337 482 6687Renuka P. Jindal (S'77-M'81-SM'85-F'91) received his Ph.D. degree in Electrical Engineering from University of Minnesota 1981 with minors in Physics and Materials Science. Upon graduation, he joined Bell Laboratories at Murray Hill, New Jersey. His experience at Bell Labs for over 22 years bridged both technical and administrative roles. On the technical side he worked in all three areas of devices, circuits and systems. Highlights include fundamental studies of noise behavior of MOS devices with channel lengths in the few hundred nanometers regime. His contributions led to almost an order of magnitude reduction in the device noise. Over the years, this has made MOS the technology of choice for broad-band fiber-optics and narrow-band wireless base station and terminal applications including cell phones and pagers. He also designed and demonstrated high-performance single-chip gigahertz-band RF integrated circuits for AT&T's Metrobus lightwave project. He researched the physics of carrier multiplication and invented techniques for ultra-low noise signal amplification and detection in terms of novel devices and circuits based upon a new principle of random multiplication and optoelectronic integration. On the administrative side, Dr Jindal developed and managed significant extramural funding from federal agencies and independent Lucent Technologies business units. He was solely responsible for developing and deploying a corporate-wide manufacturing-test strategy in relation to contract manufacturing for Lucent Technologies. In addition, he established and taught RF IC design courses at Rutgers University. In Fall 2002 Dr. Jindal accepted the position as William and Mary Hansen Hall Board of Regents Eminent Scholar Endowed Chair at University of Louisiana, Lafayette, Louisiana. There, he continues to teach and undertake fundamental research in the area of random processes, wireless and lightwave device, circuits and systems. He is also very active in professional activities in conjunction with the IEEE and is Electron Devices Society distinguished Lecturer. He has also participated in ABET activities as an evaluator for Electrical Engineering programs at institutions in the United States.
In 1985 Dr. Jindal became a senior member of IEEE. He received the Distinguished Technical Staff Award from Bell Labs in 1989. In 1991, he was elected Fellow of the IEEE for his contributions to the field of solid-state device noise theory and practice. In December 2000 he received the IEEE 3rd Millennium Medal. From 1987 to 1989 he served as editor of the solid-state device phenomena section of IEEE Transactions on Electron Devices. From 1990 to 2000 he was Editor-in-Chief of the IEEE Transactions on Electron Devices. From 2000 to 2008 he served as the Vice-President of Publications for the IEEE Electron Devices Society (EDS). In December 2007 he was voted in as President-Elect of EDS. From 2010 to 2011, Dr. Jindal served as the President of IEEE Electron Devices Society. Now, he continues to actively be involved with the Society as Junior Past President.
Lecture Topics:
1. Discreteness of matter - the ultimate scaling challenge
2. Milli-bits to Tera-bits per second and Beyond - Over 60 years of Innovation
3. Nano-FET fluctuation physics
4. Material, Device, Circuit and System Considerations for almost noise-free signal detection -
Hagen Klauk
Max Planck Institute for Solid State ResearchHeisenbergstr.1
Stuttgart 70569
GermanyPhone 1:
+49 711 689 1401Email 1:
h.klauk@fkf.mpg.de -
M.Jagadesh Kumar- Senior Member
Indian Institute of Technology, Delhi
Professor of Electrical EngineeringHauz Khas, New Delhi 110016
IndiaPhone 1:
+011-2659 1085
Phone 2
+011-2659 1959Email 1:
mamidala@ieee.orgLecture Topics: 1) Nanowire electronics: the future of CMOS technology 2) Green Transistors for energy efficient integrated circuits 3) Can Bipolar Transistors be made without doping? 4) Tunnel field effect transistors: Design and Optimization 5) Trench power MOSFETs: Design and Optimization -
Baruch Levush
Naval Research Laboratory4555 Overlook Ave. SW
Washington, DC 20375
USAPhone 1:
+1 202 404 4513Fax:
+1 202 767 1280Email 1:
baruch.levush@nrl.navy.mil -
Leda M. Lunardi
North Carolina State University
Dept. of Electircal & Computer Eng.MRC 234D, Campus Box 7911
Raleigh, NC 27695-7911
USAPhone 1:
+1 919 513 7362Fax:
+1 919 515 3027 -
James L. Merz- Fellow
University of Notre Dame
Dept. of Electrical Engineering203 B Cushing Hall
Notre Dame, IN 46556-5637
USAPhone 1:
+1 574 631 3111Fax:
+1 574 631 4393Email 1:
jmerz@nd.eduLecture Topics:
>Nanoelectronic Materials and Device Physics Challenges
>NanoOptics of Semiconductor Quantum Wells, Wires, and Dots
>Near-field Scanning Optical Microscopy of Micro-disks Containing Quantum Dots -
Arokia Nathan- Fellow
Cambridge University Centre for Advanced Photonics and Electronics
Electrical Engineering Division9, JJ Thomson Avenue
Cambridge CB3 0FA
United KingdomEmail 1:
an299@eng.cam.ac.ukLecture Topic: Large Area Electronics, Displays, Imaging, Mobile Energy -
Rebecca J. Nikolic
Lawrence Livermore National Library7000 East Avenue L-181
Livermore, CA 94550
USAPhone 1:
+1 925 423 7389Fax:
+1 925 423 6394Email 1:
nikolic1@llnl.gov -
Anthony S. Oates
TSMC
Science Based Industrial Park9, Creation Rd. 1,
Hsinchu 300-77
TaiwanPhone 1:
+886 3 5666090Fax:
+886 3 5781064Email 1:
asoates@tsmc.com -
Rajendra Singh- Fellow
Clemson University
Dept. of Electircal & Computer Engineering105 Riggs Hall, Box 340915
Clemson, SC 29634-0915
USAPhone 1:
+1 864 656 0919Fax:
+1 864 656 5910Email 1:
srajend@clemson.eduRajendra Singh (S'75-M'78-SM'82-F'02) received the B.S. degree from Agrac University, Agra, India, in 1965, the M.S. degree in physics (electronics-wireless as the special subject) from the Meerut University, India, in 1968, the M.S. degree in physics (thesis on superconductivity) from the Dalhousie University, Halifax, NS, Canada, and the Ph.D. degree in physics (dissertation on solar cells) from McMaster University, Hamilton, ON, Canada, in 1979. Dr. Singh is currently D. Houser Banks Professor in the Department of Electrical and Computer Engineering and the Director of the Center for Silicon Nanoelectronics at Clemson University. With proven success in operations, project/program leadership, R&D, product/process commercialization, and start-ups, Dr. Singh is a leading semiconductor and photovoltaic (PV) and expert with over 33 years of industrial and academic experience of photovoltaic and semiconductor industries. The technology invented by Dr. Singh at Energy Conversion Devices (US Patent No. 4419533. South African Patent No. 830748; Great Britain Patent No. 2116364) is used in the manufacturing of amorphous thin film PV modules sold by United Solar. The technology invented by Dr. Singh (US Patens #.5, 820, 942, 1998& # 5, 980, 637, 1999) has been licensed to RTP tool manufacturer AG Associates (prototype tool developed in his Lab)...From solar cells to integrated circuits, he has led the work on semiconductor and photovoltaic device materials and processing by manufacturable innovation and defining critical path.
He has published over 330 papers in various journals and conference proceedings. He is editor or coeditor of more than fifteen conference proceedings. He has presented over 50 keynote addresses and invited talks in various national and international conferences. He has served on a number of committees of various professional societies. Currently he is serving as Chair of IEEE Electron Devices Society Technical Committee on Semiconductor.
Part of Prof. Singh's awards and honors include IEEE distinguished Lecturer for Latin American on Solar Cells (Region 9) 1983, Distinguished Technologist United Nations Development Program (1987), IEEE Electron Device Society distinguished Lecturer (1994-2012), and outstanding Researcher Award, Clemson University, Sigma Xi Chapter (1997), five Clemson University awards for Faculty Excellence, Thomas D. Callinan Award of the Electrochemical Society (1998), J.F. Gibbons Award from the 11th IEEE International Conference on Advanced Thermal Processing of Semiconductors (2003), and the 2005 McMaster University Distinguished Alumni Award. Photovoltaics World (October 2010) selected him as one of the 10 Global "Champions of Photovoltaic Technology". He is Fellow of the Society of Optical Engineering, American Association for the Advancement of Science, and American Society of Metals, ASM.
Lecture Topics: Photovoltaics as dominant electricity generation technology in 21st century sub 10 nm semiconductor manufacturing Wide Band Gap Based Semiconductor Manufacturing Bottom Up Based Nanostructures: Manufacturing challanges Nanosystems: Manufacturing Challanges and Opportunities -
Yuan Taur
University of California, San Diego
Dept. of Electrical & Computer Eng.Mail Code 0407
La Jolla, CA 92093-0407
USAPhone 1:
+1 858 534 3816Fax:
+1 858 822 1247Email 1:
taur@ece.ucsd.edu -
Ravi M. Todi- Fellow
Lecture Topics: Looking Beyond Conventional Scaling, High Performance SOI eDRAM -
John R. Troxell
Delphi Corporation
Customer Technology Center Michigan3000 University Drive, Mail Code 483-300-130
Auburn Hills, MI 48326
USAPhone 1:
+1 248 732 1830Email 1:
j.troxell@ieee.org -
Douglas P. Verret
Texas Instruments, Inc.P.O. Box 1443
Houston, TX 77251
USAPhone 1:
+1 281 274 3369Fax:
+1 281 274 4203Email 1:
d-verret@ti.com -
Bin Zhao- Fellow
Fairchild Semiconductor32 Discovery, Suite 100
Irvine, CA 92618
USAPhone 1:
+1 949 266 6800Fax:
+1 614 737 6800Lecture Topics:
>Analog/Mixed-Signal/RF IC and Enabling Technologies
> High Performance VLSI Interconnect -
Xing Zhou- Senior Member
Nanyang Technological University
School of Electrical & Electronic Eng.Block S1, Nanyang Avenue, Office S1-B1c-95
Singapore 639798
SingaporePhone 1:
+65 6790 4532Fax:
+65 6793 3318Email 1:
exzhou@ntu.edu.sgLecture Topics:
"Unification of MOS Compact Models with the Unified Regional Modeling Approach"
"Compact Model Application to Statistical Variability and Reliability Studies" "A Unified Compact Model for Generic Heterostructure HEMTs"
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