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Jin Cai

Silicon and Column IV Semiconductor Devices

cai

Taiwan Semiconductor Manufacturing Corp
168 Park Ave 2
Hsinchu Science Park
Hsin-Chu 300-75
Taiwan
E-Mail: mr.j.cai@ieee.org

Jin Cai received the B.S. degree in physics from Fudan University, Shanghai, China in 1989 and the M.S. and Ph.D. degrees in electrical engineering from University of Florida, Gainesville, FL in 1997 and 2000 respectively. His PhD research includes the development of carrier recombination theory used in the DCIV method to characterize deep-submicron MOS transistors, under the direction of C.-T. Sah.

In September 2000, he joined IBM T. J. Watson Research Center at Yorktown Heights, NY in the silicon technology department. He initially worked on exploratory device research and technology pathfinding, and subsequently contributed to several generations of advanced CMOS technology development.  He has published in international conferences and IEEE journals in the areas of strained silicon CMOS, fully depleted SOI CMOS, low-pow device and circuits, lateral SOI bipolar and tunneling transistors. During his IBM tenure, he received two IBM outstanding technical achievement awards, an IBM research division award and 17 invention achievement awards. He is an author of a book chapter and over 60 technical papers.  He was granted 58 US and international patents with more pending.  In June 2015, he joined TSMC at Hsinchu, Taiwan.