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Tony S. Oates

Editor-in-Chief

oates

Taiwan Semiconductor
Manufacturing Co
121 Park Ave 3
Science Based Industry Park
Hsinchu
Taiwan
Phone: 866 3 567 3006
    Fax: 886 3 578 1064
Email: aoates@tsmc.com

Anthony S. Oates received the Ph.D. degree in physics from the University
of Reading, Reading, U.K., in 1985. He was then with the AT&T Bell Laboratories, where his research centered on studies of failure mechanisms in CMOS technologies. During this time, he was appointed as a Distinguished Member of the Technical Staff, and he assumed responsibility for reliability physics development and CMOS technology process qualification. Since 2002, he has been with Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, Taiwan, where he is responsible for technology reliability
physics research. He has published over 100 papers in the field of microelectronics reliability, and he is the co-holder of 7 patents. Dr. Oates is a fellow of the IEEE. He is currently the Editor-in-Chief for the IEEE Transactions of Device and Materials Reliability. He served as the General Chair of the International Reliability Physics Symposium in 2001, and was the chair of the IEEE Electron Devices Society Device reliability advisory committee from 2006 to 2011. He has also participated in technical committees for the International Electron Devices Meeting, IPFA, and ESREF symposia.  He has edited two conference proceedings on microelectronic materials reliability for the Materials Research Society.