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Mohamed Darwish

Solid State Power

darwish

MaxPower Semiconductor Inc
4800 Great America Parkway
Suite 205
Santa Clara CA 95054
USA
Phone: (408) 899-5165
Cell:    (408) 218-2848

E-mail: mdarwish@maxpowersemi.com

Dr. Mohamed Darwish is the President and CTO of MaxPower Semiconductor, Inc., a Silicon Valley power semiconductor technology startup. He received his Ph.D degree in EE in 1981 from the University of Wales, U.K. He invented the Lateral Insulated Gate Bipolar Transistor (LIGBT) during his postdoctoral work. From 1984 to 1993, he was a Member of the Technical Staff at Bell Laboratories, where he worked on the technology development and device modeling of high voltage bipolar-CMOS-DMOS (BCDMOS) ICs and submicron CMOS technology. He led the development of a widely used device simulation mobility model. He later joined Siliconix, Inc., in Santa Clara CA, where he managed trench MOSFET and submicron BCDMOS power IC technology development. He was also the Director of Device Technology in Power Integrations, Inc., Sunnyvale CA, where he worked on the development of high voltage ICs for power supply applications. Subsequently, he was named Vice President of Technology at Fultec Semiconductor and led the development of surge protection devices. Dr. Darwish was a recipient of the Bell Laboratories Distinguished Member of Technical Staff award in 1990. He served as the Technical Program Chair for the International Symposium of Power Semiconductor Devices and ICs (ISPSD) in 2008. He also served as Chairman of the IEEE Lehigh Valley Section and the Electron Device Chapter. He served on the technical committees of the IEDM, ISPSD and BCTM conferences and has many published papers and numerous issued and pending patents.