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T-ED Golden Reviewers List

The ability of the IEEE Electron Devices Letters to publish high quality papers has always been, and will continue to be, critically dependent upon the generosity, expertise, and dedication of the reviewers who volunteer their time for this purpose.  The Editorial Board of T-ED wish to gratefully acknowledge the individuals inside and out of the Electron Devices Society who have so selflessly contributed to this effort.

The IEEE Transactions on Electron Devices List of Golden Reviewers for 2012
 
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Name Affiliation Country
Katsumi Abe Tokyo Institute of Technology Japan
Dolphin Abessolo-Bidzo NXP Semiconductors Netherlands
Valery Afanas'ev University of Leuven Belgium
Themistokles Afentakis Sharp Laboratories of America United States
Ashish Agrawal Penn State University United States
Ibrahim Ahmad Universiti Tenaga Nasional Malaysia
Sabbir Ahmed University of Alberta Canada
Sujin Ahn Samsung Electronics Co. Ltd Korea
Kerem Akarvardar GlobalFoundries United States
Deji Akinwande University of Texas at Austin United States
Akin Akturk University of Maryland United States
Khairul Alam East West University Bangladesh
Muhammad Alam Purdue University United States
Syed Alam Everspin Technologies United States
Olayiwola Alatise Warwick University United Kingdom
Stefano Alberti Ecole Polytechnique Federale de Lausanne Switzerland
Martin Allen University of Canterbury New Zealand
Johann Alsmeier SanDisk Corporation United States
Pietro Altermatt University of Hannover Germany
Manjeri Anantram University of Washington United States
Travis Anderson Naval Research Laboratory United States
Thorvald Andersson Chalmers University Sweden
Takashi Ando IBM United States
Gudrun Andrae Institute of Photonic Technology Germany
Frédéric André Thales Electron Devices France
Diing Shenp Ang Nanyang Technological University Singapore
Iltcho Angelov Chalmers University of Technology Sweden
Costin Anghel Institut Superieur d'Electronique de Paris France
Hideaki Aochi Toshiba Corporation Japan
Marc Aoulaiche IMEC Belgium
Ian Appelbaum University of Maryland United States
Bernd K.  Appelt ASE Group United States
Joerg Appenzeller Purdue University United States
Seiichi Aritome Hynix semiconductor Inc. Korea
Silvia Armini IMEC Belgium
Lucile Arnaud LETI - CEA France
Brij Mohan Arora Indian Institute of Technology, Bombay India
Rajan Arora Georgia Institute of Technology United States
Subramaniam Arulkumaran Nanyang Technological University Singapore
Asen Asenov University of Glasgow United Kingdom
Juergen Auersperg Fraunhofer ENAS Germany
Matthias Auf der Maur University of Rome 'Tor Vergata' Italy
Klaus Aufinger Infineon Technologies AG Germany
Charles Augustine Intel Corporation United States
Uygar Avci Intel Corporation United States
Vitaliy Avrutin Virginia Commonwealth University United States
John Ayers University of Connecticut United States
Stephane Azzopardi University of Bordeaux France
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Name
Affiliation Country
Jeff Babcock National Semiconductor Corporation United States
Giorgio Baccarani Università di Bologna Italy
Kris Baert IMEC Belgium
Maryam Baghini Indian Institute of Technology Bombay India
Xiaogang Bai Spectrolab United States
Muhannad Bakir Georgia Institute of Technology United States
Alexander Balandin University of California at Riverside United States
Kaustav Banerjee University of California at Santa Barbara United States
Sujit Banerjee Power Integrations United States
Naoki Banno NEC Corporation Japan
Emanuele Baravelli Università di Bologna Italy
Jean-Charles Barbe CEA-LETI MINATEC France
Marie Garcia Bardon IMEC Belgium
Douglas Barlage University of Alberta Canada
Larry Barnett Mountain Technology United States
Joaquim Barroso National Institute for Space Research Brazil
Veeraraghavan Basker IBM SRDC @ Albany Nanotech United States
Paul Basore Hanwha Solar America United States
Friedhelm Bauer ABB Switzerland Ltd Switzerland
Stephen Bayne Texas Tech University United States
Antonios Bazigos Ecole Polytechnique Fédérale de Lausanne Switzerland
Paul Beckett RMIT University Australia
Stephen Bedell IBM T.J. Watson Research Center United States
Marco Bellini ABB Switzerland Ltd Switzerland
Philippe Benech IMEP-LAHC France
Francis Benistant CharteredSemiconductor Singapore
Steven Bentley GlobalFoundries United States
Dionisis Berdebes Purdue University United States
Magnus Berggren Organic Electronics, ITN Sweden
Joshua Bergman Teledyne Scientific and Imaging United States
Gennadi Bersuker International Sematech United States
Francesco Bertazzi Politecnico di Torino Italy
Matthieu Berthomé Ecole Polytechnique Fédérale de Lausanne Switzerland
Marc Bescond IM2NP France
Cengiz Besikci Middle East Technical University Turkey
Ole Bethge Vienna University of Technology Austria
K.N. Bhat Indian Institute of Science India
Krishna Bhuwalka Taiwan Semiconductor Manufacturing Company, Ltd. Taiwan
Griff Bilbro North Carolina State University United States
Daniel Biro Fraunhofer Institute for Solar Energy Systems ISE Germany
Arnab Biswas Ecole Polytechnique Fédérale de Lausanne Switzerland
Benjamin Blaiszik Argonne National Laboratory United States
Richard  Blanchard Silicon Valley Expert Witness Group, Inc. United States
Monica Blank Communications and Power Industries United States
Serge Blonkowski STMicroelectronics France
Ilan Bloom Saifun Semiconductors Israel
Frederic Boeuf STMicroelectronics France
Mark Bohr Intel Corporation United States
Colombo Bolognesi ETH-Zurich Switzerland
Alex Bolotnikov GE Global Research United States
Fabrizio Bonani Politecnico di Torino Italy
Mattia Boniardi Micron Semiconductor Italia Italy
John Booske University of Wisconsin-Madison United States
Magnus Borgström Lund Universtiy Sweden
Ernst Bosch Thales Electron Devices Germany
Bernhard Boser University of California at Berkeley United States
Gijs Bosman University of Florida United States
Timothy Boykin University of Alabama at Huntsville United States
Stefania Braga University of Pavia Italy
Guy Brammertz IMEC Belgium
Berinder Brar Teledyne Scientific and Imaging United States
Thomas Brazil University College Dublin Ireland
Nicolas Breil IBM France
Frank Bridges UCSC United States
Ivor Brodie University of California at Davis United States
Per Broms Thin Film Electronics AB Sweden
Lucile Broussous STMicroelectronics France
Francesca Brunetti University of Rome Italy
Ian Bu National Kaohsiung Marine University Taiwan
Julien Buckley CEA-LETI MINATEC France
Fabian Bufler Synopsys Schweiz GmbH Switzerland
Constantin Bulucea Texas Instruments United States
Alexander Burenkov Fraunhofer IISB Germany
Stephane Burignat Universiteit Gent Belgium
Geoffrey Burr IBM Almaden Research Center United States
Graeme Burt Lancaster University United Kingdom
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Name
Affiliation Country
Luis Caballero Isofoton Spain
Carlo Cagli CEA Grenoble France
Marc Cahay University of Cincinnati United States
Jin Cai IBM T.J. Watson Research Center United States
Yimao Cai Peking University China
Benton Calhoun University of Virginia United States
Fernando Calle Universidad Politécnica de Madrid Spain
Christophe Caloz École Polytechnique Canada
Renata Camillo-Castillo IBM United States
Jason Campbell National Institute of Standards and Technology United States
Joe Campbell University of Virginia United States
Fernando Campos Sao Paulo State University Brazil
Yiqun Cao Infineon Technologies AG Germany
Yu Cao Kopin Corporation United States
Yu (Kevin) Cao Arizona State University United States
Andrew Carlson Advanced Micro Devices United States
Jean-Pierre Carrère STMicroelectronics France
John Cary University of Colorado United States
Mikael Casse CEA Grenoble France
Giorgio Cellere Universita degli Studi di Padova Italy
Antonio Cerdeira CINVESTAV Mexico
Yves Chabal University of Texas at Dallas United States
Michael Chabinyc University of California at Santa Barbara United States
Junseok Chae Arizona State University United States
Yang Chai Stanford University United States
Bhaswar Chakrabarti University of Texas at Dallas United States
Partha Chakraborty Georgia Institute of Technology United States
Anjan Chakravorty Indian Institute of Technology Madras India
James Champlain Naval Research Laboratory United States
Mansun Chan Hong Kong University of Science and Technology Hong Kong
Chih-Hung Chang Oregon State University United States
Hsu-Yu Chang University of California at Los Angeles United States
Ko-Min Chang Freescale Semiconductor United States
Kuo Pin Chang Macronix International Co. Ltd. Taiwan
Yu-Wei Chang National Chiao Tung University Taiwan
Kuei-Shu Chang-Liao National Tsing Hua University Taiwan
Alain Chantre STMicroelectronics France
Pane-Chane Chao BAE Systems United States
Yu-Chiang Chao Chung Yuan Christian University Taiwan
Edoardo Charbon TU Delft Netherlands
Tathagata Chatterjee Texas Instruments United States
Sanatan Chattopadhyay University of Newcastle upon Tyne United Kingdom
Sumit Chaudhary Iowa State University United States
Sourindra Chaudhuri Princeton University United States
Brian Chen Agilent Technologies United States
Chih-Hung Chen McMaster University Canada
Chih-Ping Chen Macronix International Co. Ltd. Taiwan
Fen Chen IBM Microelectronics United States
Fred Chen Industrial Technology Research Institute Taiwan
Han-Ping Chen University of California, San Diego United States
Jiezhi Chen Toshiba Corporation Japan
Jone Chen National Cheng Kung University Taiwan
K. C. Chen Macronix International Co. Ltd. Taiwan
Kevin Chen Hong Kong University of Science and Technology Hong Kong
Pang-Shiu Chen MingShin University of Science & Technology Taiwan
Shih-Hong Chen Macronix International Co. Ltd. Taiwan
Shih-Yuan Chen National Taiwan University Taiwan
Shuang-Yuan Chen National Taipei University of Technology Taiwan
Wei-Chen Chen Macronix International Co., Ltd Taiwan
Wei-Su Chen Industrial Technology Research Institute Taiwan
Yang-Yin Chen IMEC Belgium
Yin-Nien Chen Institute of Electronics Taiwan
Yung-Yu Chen Lunghwa University of Science and Technology Taiwan
Yusheng Chen Industrial Technology Research Institute Taiwan
Xiangyu Chen Stanford University United States
Zhihong Chen Purdue University United States
Chin-Lung Cheng National Formosa University Taiwan
Huang-Chung Cheng National Chiao Tung University Taiwan
Jen-Yuan Cheng National Taiwan University Taiwan
Kangguo Cheng IBM United States
Osbert Cheng United Microelectronics Corporation Taiwan
Tom Cheng IBM United States
Igor Chernyavskiy Naval Research Laboratory United States
(Charles) Kin Cheung National Institute of Standards and Technology United States
Nathan Cheung University of California at Berkeley United States
S.W. Cheung The University of Hong Kong Hong Kong
Min-hwa Chi SMIC China
Meng-Hsueh Chiang National Ilan University Taiwan
Te-Kuang Chiang National University of Kaohsiung Taiwan
Thomas Chiarella IMEC Belgium
Andrea Chiariello University of Cassino Italy
Wei-Chih Chien Macronix International Co., Ltd. Taiwan
Chao-Hsin Chien National Chiao Tung University Taiwan
Viktor Chikan Kansas State University United States
Albert Chin National Chiao Tung University Taiwan
Alessandro Chini Universita di Modena e Reggio Emilia Italy
Byung-Jin Cho KAIST Korea
Min Hee Cho University of California at Berkeley United States
Moonju Cho IMEC Belgium
Seongjae Cho Stanford University United States
Harsha Choday Purdue University United States
Jung-BUM Choi Chungbuk National University Korea
Sung-Jin Choi University of California at Berkeley United States
Woo Young Choi Sogang University Korea
Yang-Kyu Choi Korea Advanced Institute of Science and Technology Korea
Youn Sung Choi Texas Instruments United States
Chia-Chun Chou University of Houston United States
Silke Christiansen Universitat Erlangen-Nurnberg Germany
Rongming Chu HRL Laboratories LLC United States
Kwo-Ray Chu National Taiwan University Taiwan
Min Chu Texas Instruments United States
CierSiang Chua Nanyang Technological University Singapore
Huey-Ru Chuang National Cheng Kung University Taiwan
Ching-Te Chuang National Chiao Tung University Taiwan
Chi On Chui University of California at Los Angeles United States
Raphael Clerc IMEP/ENSERG France
Gael Close Melexis Switzerland
Cornel Cobianu Honeywell Romania Romania
Paolo Colantonio University of Roma Tor Vergata Italy
Joseph Colburn HRL Laboratories LLC United States
Jean-Pierre Colinge University College Cork Ireland
Luigi Colombo Texas Instruments United States
Giovanni Condorelli STMicroelectronics Italy
Brad Conrad Appalachian State University United States
Claudio Contiero STMicroelectronics Italy
Francesco Conzatti University of Udine Italy
Simon Cooke Naval Research Laboratory United States
Geoffrey Coram Analog Devices Inc. United States
Bastien Cousin EDF R&D France
Richard Cousin CST France France
Dana Cristea IMT-Bucharest Romania
Filadelfo Cristiano LAAS-CNRS France
Sorin Cristoloveanu IMEP-LAHC-Grenoble INP-MINATEC France
Kristof Croes IMEC Belgium
Brian Crone Los Alamos National Laboratory United States
Jeroen Croon NXP Semiconductors Netherlands
Adrian Cross University of Strathclyde United Kingdom
Felice Crupi Universita della Calabria Italy
Michael Cullinan Massachusetts Institute of Technology United States
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Name
Affiliation Country
Robert Dahlgren SETI Institute United States
Chih-Hao Dai National Sun Yat-Sen University Taiwan
Gian-Franco Dalla Betta University of Trento Italy
Christian Damm Technische Universität Darmstadt Germany
Surya Shankar Dan Ecole Polytechnique Fédérale de Lausanne Switzerland
Saptarshi Das Purdue University United States
Amitava DasGupta Indian Institute of Technology Madras India
Nandita DasGupta Indian Institute of Technology Madras India
Subrata Datta Microwave Tube Research & Development Centre India
Suman Datta Penn State University United States
Supriyo Datta Purdue University United States
Jeffrey Davis Georgia Institute of Technology United States
James Dayton Teraphysics Corp. United States
Jean-Claude De Jaeger IEMN France
Luca De Michielis Ecole Polytechnique Fédérale de Lausanne Switzerland
Barbara De Salvo CEA-LETI MINATEC France
Jeanlex de Sousa Universidade Federal do Ceará Brazil
Maria de Souza Sheffield University United Kingdom
Michelly de Souza Centro Universitario da FEI Brazil
John DeBrosse IBM Research United States
M. Jamal Deen McMaster University Canada
Emmanuel Defay CEA LETI MINATEC France
Nicolas Defrance IEMN France
Robin Degraeve IMEC Belgium
Jesus del Alamo Massachusetts Institute of Technology United States
Jie Deng IBM United States
Mike Denhoff Institute for Microstructural Sciences Canada
George Dentai Varian Medical Systems United States
Joff Derluyn EpiGaN Belgium
Gajanan Dessai Arizona State University United States
Theeradetch Detchprohm Rensselaer Polytechnic Institute United States
Amos Dexter Lancaster University United Kingdom
Sarit Dhar Auburn University United States
Léa Di Cioccio CEA LETI France
Michael Dickey North Carolina State University United States
Charalabos Dimitriadis Aristotle University of Thessaloniki Greece
Frank Dimroth Fraunhofer Institute for Solar Energy Systems ISE Germany
Shi-Jin Ding Fudan University China
Yaogen Ding Chinese Academy of Science China
Don Disney Monolithic Power Systems United States
Boualem Djezzar Centre de Développement des Tachnologies Avancées (CDTA) Algeria
Philippe Dollfus Universite Paris Sud France
Simona Donati-Guerrieri Politecnico di Torino Italy
Daniel Donoval Slovak University of Technology Slovakia
Mircea Dragoman IMT-Bucharest Romania
Francesco Driussi Universita Degli Studi Di Udine Italy
Gang Du Peking University China
Pei-Ying Du Macronix International Co., Ltd. Taiwan
Wenfang Du University of Electronic Science and Technology of China China
Juan Duarte Korea Advanced Institute of Science & Technology Korea
Olgierd Dumbrajs University of Latvia Latvia
Mohan Dunga SanDisk Corporation United States
Shubham Dutta Gupta National University of Singapore Singapore
Top of page

Name
Affiliation Country
Karim El Sayed Synopsys Inc. United States
Ahmed Elwakil University of Sharjah United Arab Emirates
Kazuhiko Endo National Inst of Advanced Industrial Science and Technology Japan
Daniel Engelsen Associação Brasileira de Informática (ABINFO Brazil
Isak Engquist Linköping University Sweden
Jens Eriksson Linköping University Sweden
Thomas Ernst CEA/LETI France
Kai Esmark Infineon Technologies AG Germany
Top of page

Name
Affiliation Country
Ching-Lin Fan National Taiwan University Taiwan
Ming-Long Fan National Chiao Tung University Taiwan
Yong Fan University of Electronic Science and Technology of China China
Tian Fang University of Notre Dame United States
Tzu-Ning Fang Spansion United States
Yean-Kuen Fang National Cheng Kung University Taiwan
Andrea Fantini CEA-LETI, MINATEC France
Paolo Fantini Micron Italy
Esmat Farzana Bangladesh University of Science & Technology Bangladesh
Patrick Fay University of Notre Dame United States
Albert Fayrushin Samsung Electronics Co. Ltd Korea
Pierre Fazan Micron Belgium
Lukas Feitknecht goMicromorph Ltd. Switzerland
Baruch Feldman Weizmann Institute of Science Israel
Andreas Fell Australian National University Australia
Jia Feng Oracle United States
Jinjun Feng Beijing Vacuum Electronics Research Institute China
Claire Fenouillet-Beranger STMicroelectronics France
Montserrat Fernández-Bolanos Ecole Polytechnique Fédérale de Lausanne Switzerland
David Ferry Arizona State University United States
Claudio Fiegna University of Bologna - ARCES Italy
Gianluca Fiori University of Pisa Italy
Massimo Fischetti University of Texas at Dallas United States
Tor Fjeldly Norwegian University of Science and Tech Norway
Maximilian Fleischer Siemens AG Germany
Dominique Fleury STMicroeletronics France
Helmut Föll Christian-Albrechts-University of Kiel Germany
Guglielmo Fortunato CNR Italy
Jerry Fossum University of Florida United States
Alfred Fox Research Centre Juelich Germany
Jacopo Franco IMEC Belgium
David Frank IBM T. J. Watson Research Center United States
Martin Frank IBM T. J. Watson Research Center United States
Aaron Franklin IBM United States
Evan Franklin Australian National University Australia
Sebastien Fregonese CNRS France
Martin Frey Intel Corporation United States
C. Daniel Frisbie University of Minnesota United States
Michael Fritze USC Information Sciences Institute United States
Jenna Fu Georgia Institute of Technology United States
Xiuli Fu Beijing University of Posts and Telecommunications China
Yongqing Fu University of the West of Scotland United Kingdom
Tatsuhiko Fujihira Fuji Electric Device Technology Co. Ltd Japan
Shosuke Fujii Toshiba Corporation Japan
Akira Fujiwara NTT Photonics Laboratories Japan
Kohei Fujiwara Osaka University Japan
Shigeto Fukatsu Toshiba corporation Japan
Kenjiro Fukuda Yamagata University Japan
Yoshiaki Fukuzumi Toshiba Corporation Japan
Tze-Ching Fung Intel Corporation United States
Mauro Furno Dresden Technical University Germany
Mamoru Furuta Kochi University of Technology Japan
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Name
Affiliation Country
Roberto Gaddi Cavendish Kinetics BV Netherlands
Georg Gaertner Philips Research Germany
Stefan Gall Helmholtz Zentrum Berlin für Materialien und Energie Germany
Simone Gambini University of California at Berkeley United States
Jeff Gambino IBM Microelectronics Division United States
Francisco Gamiz Universidad de Granada Spain
Swaroop Ganguly Indian Institute of Technology Bombay India
Udayan Ganguly Indian Institute of Technology, Bombay India
Bin Gao Peking University China
Haiyong Gao University of Connecticut United States
Jianjun Gao East China Normal University China
Xuan Gao Case Western University United States
Francisco Garcia Sanchez Universidad Simon Bolivar Venezuela
Davide Garetto IBM France
Erik Garnett Stanford University United States
Remis Gaska Sensor Electronic Technology, Inc. United States
Gerwin Gelinck Philips High-Tech Campus Netherlands
Hubert George Intel Corporation United States
Panayiotis Georgiou Imperial College United Kingdom
Cosimo Gerardi STMicroelectronics Italy
Tahir Ghani Intel Corporation United States
Andrea Ghetti Micron Semiconductor Italia Italy
Gérard Ghibaudo IMEP-LAHC France
Tushar Ghosh E2V Technologies United Kingdom
Gennady Gildenblat Arizona State University United States
Martin Giles Intel Corporation United States
David Gilmer SEMATECH United States
Gino Giusi University of Messina Italy
Elena Gnani Università di Bologna Italy
Antonio Gnudi University of Bologna Italy
Michele Goano Politecnico di Torino Italy
Andres Godoy University of Granada Spain
Dan Goebel Jet Propulsion Laboratory United States
Wolfgang Gös Technical University of Wien Austria
Isabelle Goffioul-Ferain University College Cork Ireland
Mario Gonzalez IMEC Belgium
Tomas Gonzalez Universidad de Salamanca Spain
Kevin Goodman University of Notre Dame United States
Stephen Goodnick Arizona State University United States
Harald Gossner Intel Corporation Germany
Bogdan Govoreanu IMEC Belgium
Ralf Granzner Technische Universität Ilmenau Germany
Tibor Grasser Technical University of Vienna Austria
A.A. Greshnov Russian Academy of Sciences Russian
Guido Groeseneken IMEC Belgium
Daniel Grogg Ecole Polytechnique Fédérale de Lausanne Switzerland
Paul Grudowski Freescale Semiconductor United States
Gong Gu University of Tennessee, Knoxville United States
Ximeng Guan Stanford University United States
Georges Guegan LETI - CEA France
Abik Del Guerra Universita di Pisa Italy
Jian Guo OmniVision Technologies United States
Jing Guo University of Florida United States
Yufeng Guo Nanjing University of Posts and Telecommunications China
Rajesh Gupta Tram Semiconductor United States
Sumeet Gupta Purdue University United States
Augusto Gutierrez-Aitken Northrop Grumman Corporation United States
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Name
Affiliation Country
Daewon Ha Samsung Electronics Co. Ltd Korea
Predrag Habas EM Microelectronic-Marin SA Switzerland
Wilfried Haensch IBM T. J. Watson Research Center United States
Giso Hahn Universitat Konstanz Germany
Steve Hall The University of Liverpool United Kingdom
Behrang Hamadani National Institute of Standards and Technology United States
Ziv Hameiri University of New South Wales Australia
Genquan Han National University of Singapore Singapore
Masami Hane Renesas Electronics Corporation Japan
Thorsten Hansen Lund Universtiy Sweden
Yue Hao Xidian University China
Naoki Harada National Institue of Advanced Industrial Science and Technology Japan
Nils-Peter Harder University of Hannover Germany
Venkatnarayan Hariharan Intel Corporation United States
H. Rusty Harris Texas A&M University United States
Hideki Hasegawa Hokkaido University Japan
Pouya Hashemi IBM Corporation United States
Imran Hashim Intermolecular United States
Masanori Hashimoto Osaka University Japan
Shin Hashimoto Sumitomo Electric Industries, Ltd. Japan
Soha Hassoun Tufts University United States
John Hauser North Carolina State University United States
Yoshihiro Hayashi Renesas Electronics Corporation Japan
Majeed Hayat University of New Mexico United States
David Da He Massachusetts Institute of Technology United States
Jin He Peking University China
Alexander Heigl Technical University Munich Germany
Bernd Heinemann IHP Germany
Geert Hellings Katholieke Universiteit Leuven Belgium
Per-Erik Hellstrom KTH - Royal Institute of Technology Sweden
Rodolf Herfst EPCOS BV Netherlands
Gregory Herman Oregon State University United States
Francisco Javier Herraiz-Martínez Carlos III University Spain
Reinhard Herzer Semikron Elektronik GmbH &Co KG Germany
Thomas Hickmott University of Albany - SUNY United States
Ian Hill Dalhousie University Canada
Oliver Hilt FBH Berlin Germany
Christopher Hinkle University of Texas at Dallas United States
Toshiro Hiramoto University of Tokyo Japan
Arimoto Hiroshi National Institute of Advanced Industrial Science and Technology Japan
ChiaHua Ho National Nano Device Laboratories Taiwan
Chih-Hsiang Ho Purdue University United States
Terence Jun Jie Ho Nanyang Technological University Singapore
Karl Hobart Naval Research Laboratory United States
Chris Hobbs SEMATECH United States
Allon Hochbaum University of California at Irvine United States
Michael Hoenk Jet Propulsion Laboratory United States
Brad Hoff Air Force Research Laboratory United States
Anthony Holland RMIT University Australia
Steve Holland Lawrence Berkeley National Laboratory United States
Changsoo Hong Freescale Semiconductor United States
Yong Joon Hong Hokkaido University Japan
Terence Hook IBM Corporation United States
Yasushi Horii Kansai University Japan
Jörg Horzel IMEC Belgium
Zia Hossain ON Semiconductor United States
Tuo-Hung Hou National Chiao Tung University Taiwan
Michel Houssa K.U.Leuven Belgium
Peter Houston University of Sheffield United Kingdom
Phil Hower Texas Instruments United States
Yi-Hsuan Hsiao Macronix International Co. Ltd. Taiwan
Ken Hsieh Macronix International Co. Ltd. Taiwan
Tzu-Hsuan (Bruce) Hsu Macronix International Co. Ltd. Taiwan
Fu-Lung Hsueh Taiwan Semiconductor Manufacturing Company, Ltd. Taiwan
Bin Hu University of Tennessee United States
Chih-Wei Hu Macronix International Co. Ltd. Taiwan
Guangxi Hu Fudan University China
Yongjie Hu Massachusetts Institute of Technology United States
Alex Huang North Carolina State University United States
Bo-Chao Huang University of California at Los Angeles United States
Chien-Jung Huang National University of Kaohsiung Taiwan
Daming Huang Fudan University China
Junkai Huang Institute of Microelectronics China
Tao Huang University of Electronic Science and Technology of China China
Tsung-Ching Huang Taiwan Semiconductor Manufacturing Company, Ltd. United States
Arved Hübler Chemnitz University of Technology Germany
Mantu Hudait Virginia Polytechnic Institute United States
Stephen Hudgens Ovonyx, Inc. United States
Brett Hull Cree United States
Lars Hultman Linköping University Sweden
Ivo Hummelgen Universidade Federal do Parana Brazil
Charles Hunt University of California Davis United States
Paul Hurley Tyndall National Institute Ireland
Tahir Hussain HRL Laboratories LLC United States
Hanipah Hussin Universiti Teknologi Mara Malaysia
Louis Hutin University of California at Berkeley United States
Cheol Seong Hwang Seoul National University Korea
Wan Sik Hwang University of Notre Dame United States
Jenn-Gwo Hwu National Taiwan University Taiwan
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Name
Affiliation Country
Giuseppe Iannaccone Universita di Pisa Italy
Daniele Ielmini Politecnico di Milano Italy
Makoto Ikeda University of Tokyo Japan
Milan Ilic University of Belgrade Serbia
Stefan Illy Karlsruhe Institute of Technology Germany
Hyunsik Im Dongguk University Korea
Tadahiro Imada Fujitsu Laboratories Japan
Eugene Imhoff Naval Research Laboratory United States
Satoshi Inaba Toshiba Corporation Japan
Benjamin Iniguez University Rovira i Virgili Spain
Dimitris Ioannou George Mason University United States
Toshifumi Irisawa MIRAI-ASET Japan
Fernanda Irrera University of Rome La Sapienza Italy
Ryoichi Ishihara Delft University of Technology Netherlands
Hiroshi Ishiwara Tokyo Institute of Technology Japan
Ahmad Islam University of Illinois at Urbana-Champaign United States
Syed Islam University of Tennessee United States
Manabu Ito Toppan Printing Co. Ltd. Japan
Name
Affiliation Country
Robert Jackson Calabazas Creek Research Inc. United States
Zachery Jacobson University of California at Berkeley United States
Colt James Texas Tech University United States
Raj Jammy SEMATECH United States
Jean-Marc Jancu INSA - RENNES France
Jaehoon Jang Samsung Electronics Co. Ltd. Korea
Jin Jang Kyung Hee University Korea
Debdeep Jena University of Notre Dame United States
Kevin Jensen Naval Research Laboratory United States
Kanghoon Jeon University of California at Berkeley United States
Sanghun Jeon Samsung Advanced Institute of Technology Korea
S.G. Jeon Korea Electrotechnology Research Institute Korea
Jae Kyeong Jeong Inha University Korea
Jaewook Jeong Daegu Gyeongbuk Institute of Science & Technology Korea
Yoon-Ha Jeong Pohang University of Science & Technology Korea
Paul Jespers Université Catholique de Louvain Belgium
Isabel Jesus Institute of Engineering of Polytechnic of Porto Portugal
Rashmi Jha University of Toledo United States
Ritesh Jhaveri Intel Corporation United States
Feng Ji Huazhong University of Science and Technology China
Jie Jiang Hunan University China
David Jiménez Universitat Autònoma de Barcelona Spain
Juan Jimenez Tejada Universidad de Granada Spain
Satyabrata Jit IT-BHU India
Jungwoo Joh Texas Instruments United States
Jay John Freescale Semiconductor United States
Jeffrey Johnson IBM United States
Mark Johnson Naval Research Laboratory United States
Alvin Joseph IBM Microelectronics Division United States
Ravinder P.  Joshi Old Dominion University United States
Vladimir Jovanovic Delft University of Technology Netherlands
Andre Juge STMicroelectronics France
Christoph Jungemann Bundeswehr University Germany
Oana Jurchescu Wake Forest University United States
Name
Affiliation Country
Christoph Kadow Infineon Technologies AG Germany
Shunichi Kaeriyama Renesas Electronics Corporation Japan
Cherie Kagan University of Pennsylvania United States
Kuniyuki Kakushima Tokyo Institute of Technology Japan
Yoshinari Kamakura Osaka University Japan
Hiroshi Kambayashi The Furukawa Electric Co., LTD. Japan
Edwin Kan Cornell University United States
Yukihiro Kaneko Panasonic Corporation Japan
Bo Soo Kang Hanyang University Korea
Daehwan Kang Samsung Electronics Co. Ltd. Korea
Jinfeng Kang Peking University China
Kai Kang Institute of Microelectronics Singapore
Jerzy Kanicki University of Michigan United States
Narasimhulu Kanike IBM United States
Karim Karim University of Waterloo Canada
Shreepad Karmalkar Indian Institute of Technology India
Ilya Karpov Intel Corporation United States
Victor Karpov University of Toledo United States
Erich Kasper University of Stuttgart Germany
Sato Katsumi Mitsubishi Electric Corporation Power Device Works Japan
Derchang Kau Intel Corporation United States
Yusuke Kawaguchi Toshiba Corporation Japan
Kazunori Kawamoto Komatsu-Kaihatsu Japan
Shigeru Kawanaka Toshiba Corporation Japan
Mehmet Kaynak IHP Germany
Thomas Kazior Raytheon RF Components United States
Ming-Dou Ker National Chiao Tung University Taiwan
Ali Khakifirooz IBM Research at Albany Nanotech United States
Sergei Khotiaintsev National Autonomous University of Mexico Mexico
Takamaro Kikkawa Hiroshima University Japan
Dae Hwan Kim Kookmin University Korea
Jinseok Kim Samsung Electronics Co. Ltd Korea
Joungho Kim Korea Advanced Institute of Science and Technology Korea
Kyung Rok Kim Ulsan Institute of Science and Technology Korea
Moon Kim University of Texas at Dallas United States
SangBum Kim IBM T. J. Watson Research Center United States
Taehoon Kim Micron Technology Inc. United States
Yejoong Kim University of Michigan United States
Yong-Hoon Kim Korea Electronics Technology Institute Korea
Tsunenobu Kimoto Kyoto University Japan
Mutsumi Kimura Ryukoku University Japan
Ya-Chin King National Tsing Hua University Taiwan
Kentaro Kinoshita Tottori University Japan
Adrian Kitai McMaster University Canada
Hagen Klauk Max Planck Institute for Solid State Research Germany
Gerhard Klimeck Purdue University United States
Vera Klinger Fraunhofer Institute for Solar Energy Systems ISE Germany
Alexander Kloes Technische Hochschule Mittelhessen Germany
Irena Knezevic University of Wisconsin - Madison United States
Dieter Knoll IHP Germany
Kazutoshi Kobayashi Kyoto Institute of Technology Japan
Gregor Koblmueller Technishe Universitat Muenchen Germany
Seong Jin Koh University of Texas at Arlington United States
Andrei Konstantinov Fairchild Semiconductor Sweden
Kyung-Hoae Koo Intel Corporation United States
Hans Koops HaWilKo GmbH Germany
Guenter Kornfeld Kornfeld Plasma & Microwave Consulting Germany
Carol L. Kory ANALEX Corporation United States
Hans Kosina Technical University of Vienna Austria
Siyuranga Koswatta IBM United States
Chandrasekara Kothandaraman IBM United States
Anil Kottantharayil Indian Institute of Technology, Bombay India
Sebastien Kouassi Universita della Calabria United States
Alexei Koudymov RSM Electron Power United States
Dimitrios Kouvatsos NCSR Demokritos Greece
Alexey Kovalgin University of Twente Netherlands
Richard Kowalczyk L-3 Communications Electron Technologies, Inc. United States
Russell Kraft Rensselaer Polytechnic Institute United States
Abhinav Kranti Indian Institute of Technology Indore India
Ryoko Krause HiQScreen Switzerland
Ananthanarayanan Krishnamoorthy National University of Singapore Singapore
Tillmann Kubis Purdue University United States
Thomas Kuech University of Wisconsin-Madison United States
Kelin Kuhn Intel Corporation United States
Kazuhide Kumakura NTT Corporation Japan
Arvind Kumar IBM United States
Mohan Kumar SKP Engineering College India
Andrew Kummel University of California at San Diego United States
Alexander Kurayev Byelarusian State University of Informatics and Radioelectronics Belarus
Masaaki Kuzuhara University of Fukui Japan
Unoh Kwon IBM United States
Ioannis Kymissis Columbia University United States
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Name
Affiliation Country
Nathalie Labat University of Bordeaux France
Peter Lai The University of Hong Kong Hong Kong
Sheng-Chih Lai Macronix International Co. Ltd. Taiwan
Christophe Lallement University of Strasbourg France
Luca Larcher Università di Modena e Reggio Emilia Italy
Jeffrey LaRoche Raytheon RF Components United States
George Latsas University of Athens Greece
Livio Lattanzio Ecole Polytechnique Fédérale de Lausanne Switzerland
Yue Ying Lau University of Michigan United States
Steven Laux IBM T.J. Watson Research Center United States
Stefan Lauxtermann Sensor Creations United States
Leah Lavery PARC United States
Antonio Lazaro Universitat Rovira i Virgili Spain
David Leadley University of Warwick United Kingdom
Byoung Hun Lee Gwangju Instititue of Science and Technology Korea
Ching-Ting Lee National Cheng Kung University Taiwan
Edward Lee Arizona State University United States
Hengyuan Lee Industrial Technology Research Institute Taiwan
Hi-Deok Lee Chungnam National University Korea
Hoo-Jeong Lee Sungkyunkwan University Korea
Jack Lee University of Texas at Austin United States
Jang-Sik Lee Kookmin University Korea
Jen-Hao Lee Taiwan Semiconductor Manufacturing Company, Ltd. Taiwan
Jong-Ho Lee Seoul National University Korea
Keun-Ho Lee Samsung Electronics Co. Ltd. Korea
Kyeong-Jae Lee Massachusetts Institute of Technology United States
Ming-Hsiu Lee Macronix International Co. Ltd. Taiwan
Minhung Lee National Taiwan Normal University Taiwan
Minjoo Lee Yale University United States
Seung-Woo Lee Kyung Hee University Korea
Shou-Chung Lee Taiwan Semiconductor Manufacturing Company, Ltd. Taiwan
Yung-Huei Lee Numonyx United States
Bernardo Leite IMS Laboratory, University of Bordeaux France
Max Lemme KTH - Royal Institute of Technology Sweden
Craig Lent University of Notre Dame United States
Daniele Leonelli IMEC Belgium
Charles Leroux CEA-LETI France
Gregory Leung University of California at Los Angeles United States
Giorgio Leuzzi Universita degli Studi dell'Aquila Italy
David Levy Eastman Kodak Company United States
Baozhen Li IBM United States
James Li HRL Laboratories LLC United States
Ming Li Institute of Microelectronics China
Rui Li University of Notre Dame United States
Run-Wei Li NIMTE China
Xing Li Virginia Commonwealth University United States
Yiming Li National Chiao Tung University Taiwan
Chuanxin Lian Global Communication Semiconductors, Inc. United States
Qingqing Liang The Institute of Microelectronic of Chinese Academic of Science China
Albert Liao Univ Illinois Urbana-Champaign United States
Fujiang Liao BVERI United States
Charles Lieber Harvard University United States
Chenhsin Lien National Tsing Hua University Taiwan
Ruben Lieten IMEC Belgium
Chang-Yu Lin Industrial Technology Research Institute Taiwan
Cheng-Li Lin Feng Chia University Taiwan
Chih-Lung Lin National Cheng Kung University Taiwan
Ching-Fuh Lin National Taiwan University Taiwan
Chrong-Jung Lin National Tsing Hua University Taiwan
Chung-Hsun Lin IBM United States
Dennis Lin IMEC Belgium
Horng-Chih Lin National Chiao Tung University Taiwan
qinghuang Lin IBM T.J. Watson Research Center United States
Shih-Yen Lin National Chiao Tung University Taiwan
Yu-Yu Lin Macronix International Co., Ltd. Taiwan
Barry Paul Linder IBM United States
C.H. Liu National Taiwan Normal Univeristy Taiwan
Chee-Wee Liu National Taiwan University Taiwan
Haitao Liu Micron Technology Inc. United States
Jianlin Liu University of California at Riverside United States
Jing Liu Texas Instruments United States
Keng-Ming Liu National Dong Hwa University Taiwan
Lifeng Liu Peking University China
Ming Liu Institute of Microelectronics China
Po-Tsun Liu National Chiao Tung University Taiwan
Qi Liu STMicroelectronics United States
Qingmin Liu MEMC Electronic Materials, Inc. United States
Ran Liu Fudan University China
Sally Liu Taiwan Semiconductor Manufacturing Company, Ltd. Taiwan
Tsu-Jae Liu University of California at Berkeley United States
Wen-Chau Liu National Cheng Kung University Taiwan
Xiaoyan Liu Peking University China
Yang Liu IBM United States
Yongxun Liu National Inst of Advanced Industrial Science and Technology Japan
Fabrizio Lombardi Northeastern University United States
Salvatore Lombardo CNR-IMM Italy
Shibing Long Chinese Academy of Sciences China
Richard Lossy Ferdinand-Braun-Institut Germany
Darsen Lu University of California at Berkeley United States
David Lu Fuji Electric Device Technology Co. Ltd Japan
Zhichao Lu GlobalFoundries United States
Neville C. Luhmann, Jr. University of California Davis United States
Mathieu Luisier ETH Zurich Switzerland
Mark Lundstrom Purdue University United States
Lan Luo IBM United States
Xiao Rong Luo University of Electronic Science and Technology of China China
Keith Lyon Cornell University United States
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Name
Affiliation Country
Yutao Ma - United States
Zhenqiang (Jack) Ma University of Wisconsin-Madison United States
J. A. Tenreiro Machado Institute of Engineering of Polytechnic of Porto Portugal
John Devin MacKenzie Lawrence Berkeley National Laboratory United States
Alessandro Maconi Politecnico di Milano Italy
Ravi Mahajan Intel Corporation United States
Santanu Mahapatra Indian Institute of Science India
Souvik Mahapatra Indian Institute of Technology Bombay India
Chinmay Maiti India Institute of Technology India
Bogdan Majkusiak Warsaw University of Technology Poland
Kausik Majumdar Indian Institute of Science India
Niladri Majumder Purdue University United States
Gunnar Malm Royal Institute of Technology (KTH) Sweden
Siegfried Mantl Forschungszentrum Julich GmbH Germany
JunFa Mao Shanghai Jiao Tong University China
Denis Marcon IMEC Belgium
Stephan Marini University of Alicante Spain
Stanislav Markov University of Glasgow United Kingdom
Dejan Markovic University of California at Los Angeles United States
Paul Marshall - United States
Koen Martens IMEC Belgium
Russell Martin L-3 Communications Electron Technologies, Inc. United States
Javier Martin-Martinez Universitat Autonoma de Barcelona Spain
Rodrigo Martins New University of Lisbon Portugal
Massimo Mastrangeli Katholieke Universiteit Leuven Belgium
Muhammad Masuduzzaman Purdue University United States
Javier Mateos Universidad de Salamanca Spain
Jimson Mathew University of Bristol United Kingdom
Mallory Mativenga Kyung Hee university Korea
Philip Mawby University of Warwick United Kingdom
Donald Mayer Aerospace Corporation United States
E.L.H. Mayes RMIT University Australia
Satoru Mayuzumi Sony Corporation Japan
Jérôme Mazurier CEA-LETI France
Massimo Mazzillo STMicroelectronics Italy
Colin McAndrew Freescale Semiconductor United States
R. Daniel McGrath Aptina Imaging United States
Keith McIntosh Australian National University Australia
William McMahon GlobalFoundries United States
Daniel Meier Suniva, Inc. United States
Bernd Meinerzhagen TU Braunschweig Germany
Gaudenzio Meneghesso Universita di Padova Italy
William Menninger L-3 Communications Electron Technologies, Inc. United States
Roberto Menozzi University of Parma Italy
Inanc Meric Columbia University United States
Scott R. Messenger US Naval Research Laboratory United States
Guy Meynants CMOSIS nv Belgium
Giovanni Miano Università di Napoli Federico II Italy
Feng Miao Hewlett-Packard United States
Carmine Miccoli Politecnico di Milano Italy
Loukas Michalas University of Athens Greece
Bruno Michel IBM Research Zurich Switzerland
Miroslav Micovic HRL Laboratories LLC United States
Neal Mielke Intel Corporation United States
José Millán CNM-CSIC Spain
Hidenori Mimura Shizuoka University Japan
Mauro Mineo University of Roma Tor Vergata Italy
Stan Mircea University of Virginia United States
Yuichiro Mitani Toshiba Corporation Japan
Jerome Mitard IMEC Belgium
Mitiko Miura-Mattausch (GEIC) Hiroshima University Japan
Mitsutoshi Miyasaka Seiko Epson Corporation Japan
Bunji Mizuno Ultimate Junction Technologies Inc. Japan
Teruyoshi Mizutani University of Nagoya United States
Peter Moens ON Semiconductor Belgium
S. Noor Mohammad Howard University United States
Nihar Mohapatra Indian Institute of Technology, Gandhinagar India
Niladri Mojumder Purdue University United States
Christian Monzio Compagnoni Politecnico di Milano Italy
Saurabh Mookerjea Intel Corporation United States
James Moon Rochester Institute of Technology United States
Farshad Moradi Aarhus University Denmark
Frédéric Morancho LAAS-CNRS France
Luca Morassi Università di Modena e Reggio Emilia Italy
Michael Morgensen North Carolina State University United States
Nobuya Mori Osaka University Japan
Victor Moroz Synopsys Inc. United States
Tanvir Morshed University of California at Berkeley United States
Junichi Motohisa Hokkaido University Japan
Claudio Motta University of Sao Paulo Brazil
Chandra Mouli Micron Technology Inc. United States
Koen Mouthaan National University of Singapore Singapore
Daniela Munteanu IM2NP France
Raghunath Murali Georgia Institute of Technology United States
Boris Murmann Stanford University United States
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Name
Affiliation Country
Kosuke Nagashio The University of Tokyo Japan
Junghyo Nah University of California at Berkeley United States
Aneesh Nainani Stanford Univeristy United States
Pradeep Nair Indian Institute of Technology, Bombay India
Takashi Nakamura Rohm Co. Ltd Japan
Ken-ichi Nakayama Yamagata University Japan
Lis Nanver TU Delft Netherlands
Ettore Napoli University of Naples Italy
Yasuo Nara Fujitsu Microelectronics Limited Japan
Christopher Nassar Rochester Institute of Technology United States
Arokia Nathan Cambridge University United Kingdom
Masanori Natsui Tohoku University Japan
Kaushik Nayak Indian Institute of Technology Bombay India
Osama Nayfeh United States Army Research Laboratory United States
Mihail Nedjalkov Technical University of Wien Austria
Michael Nelhiebel Infineon Technologies Austria Austria
Yael Nemirovsky Technion - Israel Institute Of Technology Israel
Neophytos Neophytou Technical University of Vienna Austria
Philip Neudeck NASA United States
Geok Ing Ng Nanyang Technological University Singapore
Tse Nga Ng Palo Alto Research Center United States
Wai Tung Ng University of Toronto Canada
Norbert Nickel Helmholtz-Zentrum Germany
Pierre Nicole Thales Electron Devices France
Dmitri Nikonov Intel Corporation United States
Tak Ning IBM United States
Roberta Nipoti CNR Italy
Yann Niquet CEA Grenoble France
Katsuhiko Nishiguchi NTT Basic Research Laboratories Japan
Tomonori Nishimura The University of Tokyo Japan
Guofu Niu Auburn University United States
Takeshi Nogami IBM Corporation United States
Kenji Nomura Tokyo Institute of Technology Japan
Toshinori Numata Toshiba Corporation Japan
Gregory Nusinovich University of Maryland United States
Name
Affiliation Country
Nixon O Dalsa, Inc. Canada
Tadahiro Ohmi Tohoku University Japan
Hideo Ohno Tohoku University Japan
Masayuki Okamoto Ube National College of Technology Japan
Aaron Oki Northrop Grumman Space Technology United States
Serge Oktyabrsky University at Albany United States
Ali Okyay Bilkent University Turkey
Ichiro Omura Toshiba Corporation Japan
Yasuhisa Omura Kansai University Japan
Kazuo Ono Central Research Laboratory, Hitachi. Ltd. Japan
Gregory Onushkin Philips Lighting Netherlands
Antonio Orlandi University of L'Aquila Italy
Alexei Orlov University of Notre Dame United States
Bernard Orsal University Montpellier 2 France
Adelmo Ortiz-Conde Universidad Simon Bolivar Venezuela
Mikael Östling KTH - Royal Institute of Technology Sweden
Yijian Ouyang Maxim IC United States
Mehmet Ozturk North Carolina State University United States
Name
Affiliation Country
Andrea Padovani Università di Modena e Reggio Emilia Italy
Sangwoo Pae Intel Corporation United States
Ioannis Pagonakis KIT/IHM Germany
David Paine Brown University United States
Amlan Pal Indian Association for the Cultivation of Science India
Tomas Palacios Massachusetts Institute of Technology United States
Pierpaolo Palestri Universita Degli Studi Di Udine Italy
Dev Palmer US Army Research Laboratory United States
Dinesh Pamunuwa University of Bristol United Kingdom
Ci-Ling Pan National Tsing-Hua University Taiwan
Liyang Pan Tsinghua University China
Tung-Ming Pan Chang Gung University Taiwan
Georgios Panagopoulos Purdue University United States
Lucio Pancheri Fondazione Bruno Kessler Italy
Sokrates Pantelides Vanderbilt University United States
Luigi Pantisano IMEC Belgium
Matt Panzer Tufts University United States
Claudio Paoloni Lancaster University United Kingdom
Pierre Papet Roth&Rau switzerland Switzerland
Chan Hyeong Park Kwangwoon University Korea
Jung-Min Park Samsung Electronics Co. Ltd Korea
Kyung-Bae Park Samsung Advanced Institute of Technology Korea
Young-Woo Park Samsung Electronics Co. Ltd Korea
Anthony Parker Macquarie University Australia
Chittor Parthasarathy STMicroelectronics India
Elena Pascual Universidad de Salamanca Spain
Tanya Paskova North Carolina State University United States
Thorsten Passow IAF Fraunhofer United States
Paolo Pavan Universita di Modena e Reggio Emilia Italy
Marcelo Pavanello Centro Universitario da FEI Brazil
Andreas Pawlak University of Technology Dresden Germany
Navid Paydavosi University of Alberta Canada
Jose Carlos Pedro University of Aveiro Portugal
Sameer Pendharkar Texas Instruments United States
JunBiao Peng South China University of Technology China
Xihong Peng Arizona State University United States
Elio Perigo IPT-USP Brazil
Kurt Pernstich National Institute of Standards and Technology United States
Marco Peroni Selex-SI Italy
Julien Perruisseau-Carrier Ecole Polytechnique Fédérale de Lausanne Switzerland
Michael Petelin Institute of Applied Physics RAS Russian
Ian Marius Peters National University of Singapore Singapore
John Petillo Science Applications International Corporation United States
Kin-Leong Pey Singapore University of Technology and Design Singapore
Ahn-Tuan Pham Synopsys Inc. United States
Alan Phelps University of Strathclyde United Kingdom
Ung-Hwan Pi Samsung Advanced Institute of Technology Korea
Gianluca Piazza Carnegie Mellon University United States
Peter Pichler Fraunhofer Institute Germany
Ron Pieper University of Texas at Tyler United States
Edwin Piner Texas State University United States
Marco Pirola Politecnico di Torino Italy
Gregor Pobegen KAI GmbH Austria
Dionyz Pogany Vienna University of Technology Austria
Thierry Poiroux LETI - CEA France
Stefano Poli University of Bologna Italy
Arup Polley Texas Instruments United States
Jef Poortmans IMEC Belgium
Lisa Porter Carnegie Mellon University United States
Marc Porti Universidad Autonoma de Barcelona Spain
Siddharth Potbhare University of Maryland United States
Vincent Pott Institute of Microelectronics Singapore
Siavash Pourkamali University of Denver United States
Kirk Prall Micron Technology Inc. United States
Guillaume Prenat SPINTEC (CEA/CNRS) France
Ed Priesler TowerJazz United States
Gregory Prigozhin Massachusetts Institute of Technology United States
Sophie Puget STMicroelectronics France
Kanan Puntambekar Sharp Laboratories of America United States
Sarath Puthenthermadam Cypress Semiconductor United States
Name
Affiliation Country
Xinping Qu Fudan University China
Ruediger Quay Fraunhofer - IAF Germany
Cedric Quendo Université de Bretagne Occidentale France
Raymond Quere XLIM - CNRS UMR France
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Name
Affiliation Country
Rahul Radhakrishnan Texas Instruments United States
Quentin Rafhay MINATEC France
Lars-Åke Ragnarsson IMEC Belgium
Munaf Rahimo ABB Switzerland Ltd Switzerland
Vito Raineri CNR-IMM Italy
Mina Rais-Zadeh University of Michigan United States
Vikas Rana Forschungszentrum Julich GmbH Germany
Barry Rand IMEC Belgium
Jean-Pierre Raskin Université catholique de Louvain Belgium
Robert Rassel IBM United States
Surendra Rathod Indian Institute of Technology Roorkee India
Uwe Rau Forschungszentrum Julich GmbH Germany
Umberto Ravaioli University of Illinois at Urbana-Champaign United States
Arijit Raychowdhury Intel Corporation United States
Federico Recart UPV/EHU - University of the Basque Country Spain
Sherief Reda Brown University United States
Moonhor Ree Pohang University of Science & Technology Korea
Mark Reed Yale University United States
Lino Reggiani Universita di Lecce Italy
Susanna Reggiani Università di Bologna Italy
Leonard Franklin Register University of Texas at Austin United States
Gilles Reimbold CEA-LETI MINATEC France
Hans Reisinger Infineon Technologies AG Germany
Behzad Rejaei Sharif University of Technology Iran
Fengbo Ren University of California at Los Angeles United States
Zhibin Ren IBM United States
Raul Rengel Universidad de Salamanca Spain
Iman Rezanezhad Gatabi Texas A&M University United States
Bryce Richards Heriot-Watt University United Kingdom
Craig Riddet University of Glasgow United Kingdom
Denis Rideau STMicroelectronics France
Jae-Sung Rieh Korea University Korea
Matteo Rinaldi Northeastern University United States
Niccolo Rinaldi Universita di Napoli Italy
Rafael Rios Intel Corporation United States
Romain Ritzenthaler IMEC Belgium
John Robertson Cambridge University United Kingdom
Fabrizio Roccaforte CNR-IMM Italy
Maarten Rockele IMEC Belgium
Cesar Roda Neve Université catholique de Louvain Belgium
Mark Rodder PDF Solutions, Inc. United States
Noel Rodriguez Universidad de Granada Spain
John Rogers University of Illinois at Urbana-Champaign United States
Yakov Roizin Tower Semiconductor Ltd. Israel
Kevin Ronald University of Strathclyde United Kingdom
Jean-Michel Roquais Thales Electron Devices France
Nicholas Rouger Grenoble University France
Jean-Marc Routoure Université de Caen Basse-Normandie United States
Ananda Roy Intel Corporation United States
Arunanshu Roy Stanford University United States
James Royer University of California, San Diego United States
P. Paul Ruden University of Minnesota United States
Tamara Rudenko National Academy of Sciences of Ukraine Ukraine
Sergey Rumyantsev Rensselaer Polytechnic Institute United States
Roland Rupp Infineon Technologies AG Germany
Adrian Rusu POLITEHNICA University of Bucharest Romania
Jason Ryan National Institute of Standards and Technology United States
Geunmin Ryu University of Maryland College Park United States
Kevin Ryu Massachusetts Institute of Technology United States
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Name
Affiliation Country
Angada Sachid University of California Berkeley United States
Toufik Sadi Technische Universitaet Ilmenau Germany
Hyun Chul Sagong Pohang University of Science & Technology Korea
Shyamal Kumar  Saha Indian Association for the Cultivation of Science India
Wataru Saito Toshiba Corporation Japan
Paulius Sakalas Dresden University of Technology Germany
Wataru Sakamoto Toshiba Corporation Japan
Koji Sakui Micron Japan
C. Andre Salama University of Toronto Canada
Jean-Michel Sallese Ecole Polytechnique Fédérale de Lausanne Switzerland
Sanjiv Sambandan Indian Institute of Science India
Marco Sampietro Politecnico di Milano Italy
Alberto Santarelli University of Bologna Italy
Bernard Sapoval École Polytechnique France
Marco Saraniti Arizona State University United States
Chandan Sarkar Jadavpur University India
Deblina Sarkar University of California Santa Barbara United States
Ninad Sathaye IBM India Private Ltd. India
Sneh Saurabh Indian Institute of Technology India
Andrey Savilov Institute for Applied Physics Russian
Raghvendra Saxena Solid State Physics Labotarory India
Olivier Saxod STMicroelectronics France
Edl Schamiloglu University of New Mexico United States
Martin Schirra Thales Electron Devices GmbH Germany
Martin Schlosser University of the German Federal Armed Forces Germany
Jurriaan Schmitz University of Twente Netherlands
Andries Scholten NXP Semiconductors Netherlands
Frank Scholze Physikalisch-Technische Bundesan-stalt Germany
Ronald Schrimpf Vanderbilt University United States
Dieter Schroder Arizona State University United States
Dietmar Schroeder Hamburg University of Technology Germany
Michael Schroter TU Dresden Germany
Joel Schulman HRL Laboratories LLC United States
Dietmar Schulz Komax Systems LCF SA Switzerland
Hermann Schumacher Universität Ulm Germany
Udo Schwalke Technische Universität Darmstadt Germany
Mike Schwarz Universitat Rovira i Virgili Spain
Ulrich Schwarz Fraunhofer - IAF Germany
Frank Schwierz Technische Universitaet Ilmenau Germany
Konrad Seidel Fraunhofer Center Nanoelectronic Technology Germany
Peter Seitz CSEM SA Switzerland
Tsuyoshi Sekitani University of Tokyo Japan
Siegfried Selberherr Technical University of Vienna Austria
Luca Selmi Universita Degli Studi Di Udine Italy
Nicola Serra FBK-IRST Italy
Terese Serrano-Gotarredona Spanish Research Council Spain
Avi Shalav Australian National University Australia
R.K. Sharma CEERI Pilani India
Jonathan Shaw Naval Research Laboratory United States
Dmitry Shchegolkov Los Alamos National Laboratory United States
J. Richard Shealy Cornell University United States
John Shen University of Central Florida United States
Kenneth Shepard Columbia University United States
David Sheridan Semisouth United States
Dan Shi Intel Corporation United States
Luping Shi Data Storage Institute Singapore
M. Ayman Shibib Fultec Semiconductor United States
Hisashi Shichijo University of Texas at Dallas United States
Wei-Kai Shih Intel Corporation United States
Jong-In Shim Hanyang University Korea
Hyungcheol Shin Seoul National University Korea
Mincheol Shin Korea Advanced Institute of Science and Technology Korea
Young-Min Shin Northern Illinois University United States
Keisuke Shinohara HRL Laboratories LLC United States
Maxim Shkunov University of Surrey United Kingdom
Mayank Shrivastava Intel Mobile Communications Germany
Danny Shum Infineon Technologies Corp Germany
Dieter Silber University of Bremen Germany
Grigory Simin University of South Carolina United States
Eddy Simoen IMEC Belgium
Johnny Sin The Hong Kong University of Science and Technology Hong Kong
R. Singh Indian Institute of Technology Delhi India
Ron Sinton Sinton Consulting Inc United States
Henning Sirringhaus University of Cambridge United Kingdom
Dimtry Sizov Corning Incorporated United States
John Slonczewski Katonah Research Center United States
Gert-Jan Smit NXP semiconductors Netherlands
Jeremy Smith Northwestern University United States
Christopher Snowden University of Surrey United Kingdom
Paul Solomon IBM T.J. Watson Research Center United States
Ken'ichiro Sonoda Renesas Technology Corp. Japan
Bart Sorée IMEC Belgium
Alessandro Spinelli Politecnico di Milano Italy
Purushothaman Srinivasan Texas Instruments United States
Rolf Stangl - China
James Stathis IBM T. J. Watson Research Center United States
Stefanos Stefanou Helic Inc. Greece
Soeren Steudel IMEC Belgium
Eric Stevens True Sense Imaging United States
Antonio Stocco Universita di Padova Italy
Andy Strachan National Semiconductor Corporation United States
John-Paul Strachan Hewlett Packard United States
Haralampos Stratigopoulos TIMA Laboratory/CNRS France
Andreas Stricker - United States
Dmitri Strukov University of California at Santa Barbara United States
Michele Stucchi IMEC Belgium
Pin Su National Chiao Tung University Taiwan
John Suehle National Institute of Standards and Technology United States
Vinesh Sukumar Aptina Imaging United States
Haifeng Sun Institute of Microelectronics Singapore
Siddarth Sundaresan GeneSiC Semiconductor United States
Jordi Sune Universitat Autònoma de Barcelona Spain
Vyshnavi Suntharalingam MIT Lincoln Laboratory United States
Charles Surya The Hong Kong Polytechnic University Hong Kong
Surajit Sutar University of Notre Dame United States
Einar Sveinbjörnsson University of Iceland Iceland
Viktor Sverdlov Technical University of Vienna Austria
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Name
Affiliation Country
Roozbeh Tabrizian Georgia Institute of Technology United States
Munehiro Tada NEC Corporation Japan
Marko Tadjer Polytechnic University of Madrid Spain
Hiromasa Takahashi Hitachi Europe Ltd. United Kingdom
Mitsue Takahashi National Inst of Advanced Industrial Science and Technology Japan
Tsunaki Takahashi Tokyo Institute of Technology Japan
Yasuo Takahashi Hokkaido Unicersity Japan
Hiroshi Takeda Renesas Electronics Corporation Japan
Riichiro Takemura Central Research Laboratory, Hitachi. Ltd. Japan
Ken Takeuchi Tokyo University Japan
Kiyoshi Takeuchi Renesas Electronics Corporation Japan
Alec Talin National Institute of Standards and Technology United States
Cher Ming Tan Nanyang Technological University Singapore
Kian Ming Tan GlobalFoundries Singapore Singapore
Shyue Seng Tan Nanyang Technological University Singapore
Jin Tang National Semiconductor Corporation United States
Yang Tang Institute of Microelectronics China
Zhao Tang SUNY Buffalo United States
Nelson Tansu Lehigh University United States
Noriyuki Taoka The University of Tokyo Japan
Yuan Taur University of California at San Diego United States
Gordon Taylor SRI International United States
Dorota Temple RTI International United States
Li-Feng Teng National Chiao Tung University Taiwan
Zhi Qiang Teo Nanyang Technological University Singapore
Masayuki Terai Renesas Electronics Corporation Japan
Akinobu Teramoto Tohoku University Japan
Nobukazu Teranishi Panasonic Corporation Japan
Paolo Tessariol Numonyx Italy
Nir Tessler Technion - Israel Institute Of Technology Israel
Aaron Thean Qualcomm United States
Alan Theiss L-3 Communications Electron Technologies, Inc. United States
Loic Théolier LAAS-CNRS France
Albert Theuwissen Harvest Imaging Belgium
Olivier Thomas CEA-LETI France
Olivier Thomas IM2NP France
Trevor Thornton Arizona State University United States
Yuri Tkachev Silicon Storage Technology, Inc. United States
Ignacio Tobias Universidad Politécnica de Madrid Spain
Eng-Huat Toh GlobalFoundries Singapore Singapore
Ken Tokunaga Kogakuin University Japan
Paolo Toniutti University of Udine Italy
Kazuyoshi Torii Hitachi Central Research Laboratories Japan
Akira Toriumi University of Tokyo Japan
Lionel Torres University Montpellier 2/CNRS France
Fabrizio Torricelli Eindhoven University of Technology Netherlands
Alessandro Torsi Micron Technology Inc. United States
Luisa Torsi Universita di Bari Italy
Gaeton Toulon LAAS-CNRS France
Tanya Trajkovic Cambridge Semiconductor United Kingdom
Fabio Traversa Universitat Autònoma de Barcelona Spain
David Trémouilles LAAS-CNRS France
Vishal Trivedi Freescale Semiconductor United States
Wen-Jer Tsai Macronix International Co. Ltd. Taiwan
Frank Tseng University of Virginia United States
Alexander Tsibizov Synopsys Switzerland LLC Switzerland
Andreas Tsormpatzoglou Aristotle University of Thessaloniki Greece
Hideaki Tsuchiya Kobe University Japan
Bing-Yue Tsui National Chiao Tung University Taiwan
Shimpei Tsujikawa Sony Corporation Japan
Ahmet Tura Intel Corporation United States
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Name
Affiliation Country
Ken Uchida Keio University Japan
Yukiharu Uraoka National Institue of Advanced Industrial Science and Technology Japan
Jeffrey Urban Lawrence Berkeley National Laboratory United States
Michael Uren University of Bristol United Kingdom
Miguel Urteaga Teledyne Scientific Company United States
Takamasa Usui Toshiba America Electronic Components Inc United States
Name
Affiliation Country
Mani Vaidyanathan University of Alberta Canada
Pouya Valizadeh Concordia University Canada
Antonio Valletta CNR Italy
Joost Van Beek NXP Semiconductors Netherlands
Mark Van Dal TSMC Europe BV Belgium
Geert Van den bosch IMEC Belgium
Olaf van der Sluis Philips Research Netherlands
Ramses van der Toorn Deltf University of Technology Netherlands
Stefaan Van Huylenbroeck IMEC Belgium
Ronald van Langevelde Philips Research Netherlands
Lode Vandamme Eindhoven University of Technology Netherlands
William Vandenberghe K.U.Leuven Belgium
Tony Vanhoucke NXP Semiconductors Belgium
Christelle Varenne LASMEA France
Dhanoop Varghese Texas Instruments United States
Dragica Vasileska Arizona State University United States
Premachandran Vayalakkara Solar Energy Research Institute of Singapore Singapore
Reinaldo Vega IBM United States
Dmitry Veksler SEMATECH United States
Luis Velasquez-Garcia Massachusetts Institute of Technology United States
Nagavarapu Venkatagirish SanDisk Corporation United States
Rama Venkatasubramanian RTI International United States
John Verboncoeur Michigan State University United States
Anne Verhulst IMEC Belgium
Giovanni Verzellesi University of Modena and Reggio Emilia Italy
Elisa Vianello Fondazione Bruno Kessler Italy
Lasse Vines University of Oslo Norway
Steven Vitale Massachusetts Institute of Technology United States
Logeeswaran VJ University of California-Davis United States
Holger von Wenckstern Universität Leipzig Institut für Experimentelle Physik II Germany
Name
Affiliation Country
Thomas Waechtler Fraunhofer ENAS Germany
John Wager Oregon State University United States
Christian Walczyk IHP Germany
Niamh Waldron IMEC Belgium
Andrew Walker Schiltron Corporation United States
Robert Wallace University of Texas at Dallas United States
Robert J. Walters Naval Research Laboratory United States
Bin Wang Impinj Inc. United States
C.D. Wang TianJin University China
Chang-Tzu Wang United Microelectronics Corporation Taiwan
Gan Wang IBM United States
Geng Wang IBM Corporation United States
Hailing Wang IBM Corporation United States
Han Wang Massachusetts Institute of Technology United States
Jun Wang Shanghai Institute of Microsystem China
Mingliang Wang Qualcomm United States
Mingxiang Wang Soochow University China
Peng-Fei Wang Fudan University China
Runsheng Wang Peking University China
Sui-Dong Wang Soochow University China
Wei Wang Intel Corporation Belgium
Wenyong Wang University of Wyoming United States
Xiaobin Wang Seagate Technology LLC United States
Xin Peng Wang IMEC Belgium
Yan Wang Institute of Microelectronics China
Yangang Wang University of Souothampton United Kingdom
Yuan Wang Institute of Microelectronics China
Zhong Wang Georgia Institute of Technology United States
Rainer Waser Forschungszentrum Julich GmbH Germany
Katsuyoshi Washio Tohoku University Japan
Edward Wasige University of Glasgow United Kingdom
Takashi Watanabe Brookman Technology Japan
Hiroshi Watanabe National Chiao Tung University Taiwan
Jeremy Watling University of Glasgow United Kingdom
Josef Watts IBM Microelectronics Division United States
Klaus Weber Australian National University Australia
Monika Weber Yale University United States
Lan Wei Massachusetts Institute of Technology United States
Xiaoyun Wei Huazhong University of Science and Technology China
Doug Weiser Texas Instruments United States
Charles Weitzel - United States
Patrick Wellenius Phononic Devices United States
Juergen H. Werner University of Stuttgart Germany
Lars-Erik Wernersson Lund University Sweden
Andreas Wettstein Synopsys Switzerland LLC Switzerland
Marvin White State University of Ohio United States
Per Widenborg University of New South Wales Australia
Gilson Wirth UFRGS Brazil
Reinout Woltjer Philips Research Netherlands
Jen It Wong Nanyang Technological University Singapore
Hei Wong City University of Hong Kong Hong Kong
H.-S. Philip Wong Stanford University United States
Johnson Wong Solar Energy Research Institute of Singapore Singapore
Man Hoi Wong SEMATECH United States
Man Hoi Wong University of California at Santa Barbara United States
Simon Wong Stanford University United States
Nicola Wrachien University of Padova Italy
Edward Wright Beam Wave Research United States
Boping Wu Intel Corporation United States
Chien-Jang Wu National Taiwan Normal University Taiwan
Chung-Cheng Wu Taiwan Semiconductor Manufacturing Company, Ltd. Taiwan
Chung-Chih Wu National Taiwan University Taiwan
Hao Wu Sun Yat-sen University China
Huaqiang Wu Tsinghua University China
Jong-Ching Wu National Changhua University of Education Taiwan
Weimin Wu Arizona State University United States
Yanqing Wu IBM United States
Yi Wu Stanford University United States
Yi-Hong Wu National Chiao Tung University Taiwan
Yu-Sheng Wu National Chiao Tung University Taiwan
Yung-Hsien Wu National Tsing-Hua University Taiwan
Peter Wuerfel University of Karlsruhe Germany
Joachim Wuerfl Ferdinand-Braun-Institut Germany
Name
Affiliation Country
Kejun Xia Auburn University United States
Qiangfei Xia University of Massachusetts United States
Yu Xia Polyera Corporation United States
Jushan Xie Cadence United States
Qi Xie Ghent University Belgium
Chuan Xu Maxim Integrated Products United States
Nuo Xu University of California, Berkeley United States
Zheng Xu IBM United States
Yi Xuan Purdue University United States
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Name Affiliation Country
Toshishige Yamada Santa Clara University United States
Hao Yan Harvard University United States
Chien-Hsin Yang National University of Kaohsiung Taiwan
Fu-Liang Yang National Nano Device Laboratories Taiwan
Wen Luh Yang Feng Chia University Taiwan
Jane Yater Freescale Semiconductor United States
Kenneth Yau University of Toronto Canada
Arash Yazdanpanah Goharrizi University of Tehran Iran
Xiaohua Ye Aligtron inc, USA United States
Peide Ye Purdue University United States
Yung-Hui Yeh Industrial Technology Research Institute Taiwan
Fon-Shan Yeh (Huang) National Tsing-Hua University Taiwan
Yee-Chia Yeo National University of Singapore Singapore
Hamza Yilmaz AOS Semiconductor United States
Paul Yoder Georgia Institute of Technology United States
Seunghyup Yoo Korea Advanced Institute of Science and Technology Korea
Won Jong Yoo Sunkyunkwan University Korea
Jun-Bo Yoon Korea Advanced Institute of Science and Technology Korea
Sung Min Yoon Kyung Hee University Korea
Eiji Yoshida Fujitsu Microelectronics Limited Japan
Chadwin Young SEMATECH United States
Reza Yousefi Islamic Azad University, Nour Branch Iran
Bo Yu Qualcomm United States
C. L. Yu Taiwan Semiconductor Manufacturing Company, Ltd. Taiwan
Hongbin Yu Arizona State University United States
Hongyu Yu Nanyang Technological University Singapore
HongYu Yu South University of Science and Technology of China China
Mingbin Yu Institute of Microelectronics Singapore
Shimeng Yu Stanford University United States
Zhiping Yu Institute of Microelectronics China
Jiahui Yuan SanDisk Corporation United States
Jiann-shiun Yuan University of Central Florida United States
Name
Affiliation Country
John Zahurak Micron Technology, Inc. United States
Cristian Zambelli University of Ferrara Italy
Peter Zampardi Skyworks Solutions Inc. United States
Enrico Zanoni Universita di Padova Italy
Vladimir Zapevalov Institute of Applied Physics RAS Russian
Franco Zappa Politecnico di Milano Italy
Jun Zeng MaxPower Semiconductor Inc United States
Carl-Mikael Zetterling KTH - Royal Institute of Technology Sweden
Ning Zhan IBM Semiconductor Research and Development Center United States
Bo Zhang University of Electronic Science and Technology of China China
Guohe Zhang Institute of Microelectronics China
Jian Zhang Liverpool John Moores University United Kingdom
Jianmin Zhang CISCO Systems, Inc. United States
Lijie Zhang Institute of Microelectronics China
Lining Zhang Institute of Microelectronics China
Qin Zhang National Institute of Standards and Technology United States
Qun Zhang Fudan University China
Shengdong Zhang Institute of Microelectronics China
Wei Zhang Fudan University China
Yongxi Zhang Texas Instruments United States
Yue Ping Zhang Nanyang Technological University Singapore
Han Zhao Intel Corporation United States
Li Zhao Ansys Corporation United States
Pei Zhao University of Notre Dame United States
Qing-Tai Zhao Forschungszentrum Julich GmbH Germany
Wei Zhao Polyera Corporation United States
Xing Zhou Nanyang Technological University Singapore
Yi Zhou University of California at Los Angeles United States
Judy Zhu Sarnoff Corporation United States
Yan Zhuang Wright State University United States
Maryam Ziaei-Moayyed Sandia United States
Thomas Zimmer Université de Bordeaux France
Paul Zuber IMEC Belgium