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Youichi Momiyama

MOS Devices and Technology

 momiyama

Fujitsu Semiconductor LTD 1500 Mizono
Tado-cho, Kuwana 511-0192
Japan
Phone: 81 594 24 2640
    Fax: 81 594 24 5583
E:mail: momi@jp.fujitsu.com

Youichi Momiyama received the B.S. and M.S. degree in electronics engineering from Niigata University, Niigata, Japan, in 1990 and 1992, respectively.

 In 1992, he joined Fujitsu Laboratories Ltd., Atsugi, Japan, where he has been engaged in research and development of low-power and high-speed CMOS devices. He developed the deep sub-micron high-k / metal gate transistor using Ta2O5 / TiN stack in 1997, and accelerated the research and development of high-k materials as a gate stack application. After that, he was engaged in research of RF-CMOS transistor design based on the bulk and SOI technologies for SOC application. He has also been engaged in process integration of 130-45 nm LP and HP technologies at the same time.

 His present activities include process integration of 32/28 nm node LP and HP technologies, Si MOSFET scaling, device characterization and circuit-device co-design.

 Mr. Momiyama is a member of the IEEE electron devices society and solid-state circuits society.