Takashi Egawa

Compound Semiconductor Devices

Nagoya Institute of Technology
Research Center for Nano-device and System
Gokiso-cho, Showa-ku
Nagoya Aichi 466-8555
Phone:   81 52 735 5544
Fax: 81 52 5546

Takashi Egawa received the B.E. and M.E. degrees in electronics from Nagoya Institute of Technology in 1980 and 1982, respectively.  From 1982 to 1988, he was engaged in research on high-speed GaAs LSI in Oki Ltd., Tokyo, Japan.  He received D.E. degree in electrical and computer engineering from Nagoya Institute of Technology in 1991.  In 1991, he joined Nagoya Institute of Technology as a research associate.  He became an associate professor in 1993, a professor in 1999 at the Research Center for Micro-Structure Devices, and a professor in 2004 at the Research Center for Nano-Device and System.  He is now a professor and director of this center.  His current fields of interest are heteroepitaxy of GaN and GaAs by MOCVD and their application to electronic and optical devices.  He has authored or co-authored more than 220 publications in international journals.  He received the awards from IEE Japan with the Kodaira Memorial Prize in 1991 and from the laser society of Japan in 1996.  He also received awards from the Japanese Association for Crystal Growth (JACG) and from the Ministry of Education, Culture, Sports, Science and Technology in 2010.  Prof. Egawa is a member of the Japan Society of Applied Physics, the IEE of Japan, and the IEEE Electron Devices Society.