Jurriaan Schmitz

Silicon and Column IV Semiconductor Devices
Materials, Processing and Packaging


University of Twente
Hogekamp 3248
PO Box 217
Enschede 7500 AE
The Netherlands
Phone: 31 53 489 2726
Fax:      31 53 489 1034




Jurriaan Schmitz was born in Elst (Netherlands) in 1967. He received his M.Sc. (with honors) and Ph.D. in experimental physics from the University of Amsterdam in 1990 and 1994, respectively. His research in that period was devoted to radiation imaging detectors for Large Hadron Collider experiments. He was a CERN Summer Student in 1990.

He joined Philips Research (Eindhoven, Netherlands) in 1994 as Senior Scientist to work on CMOS device technology, characterization and reliability. He studied transistor scaling from 0.35-µm to 90-nm technology nodes, with topics like gate depletion, boron penetration, pocket (halo) implants and shallow junctions, and developed characterization techniques for transistors with leaky dielectrics.

In 2002 he left Philips to become Professor of Semiconductor Components at the University of Twente (Enschede, Netherlands), where he presently heads the Department of Electrical Engineering. He (co)authored over 200 scientific papers and holds 16 US patents. His research interests include CMOS post-processing, novel materials, silicon device concepts, and wafer-level electrical characterization of devices.

Prof. Schmitz was General Chairman of the 2011 IEEE ICMTS conference, is an executive committee member of IEEE IEDM, and serves as TPC member of the ESSDERC conference. He is a member of the Editorial Advisory Board of Solid-State Electronics. He also chairs the IEEE-EDS Chapter Benelux.