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Martin Gall

 

gall

Frauhofer Institute for Nondestructive Testing IZFP Materials and Reliability for Micro-and Nanoelectronics
Dresden Branch
Maria-Reiche-Str 2
D-01109 Dresden
Germany

     Phone: 49 351 88815 524
         Fax: 49 351 88815 509 E-mail:

martin.gall@izfp-d.fraunhofer.de

 

 

Dr. Martin Gall is currently department head of Materials and Reliability for Micro- and Nanoelectronics at the Fraunhofer Institute for Nondestructive Testing in Dresden, Germany (FhG IZFP-D).  He received the title of Diplomphysiker (M.S. in physics) from the Rheinisch-Westfaelische Technische Hochschule Aachen, Germany, in 1992, and a Ph.D. in materials science and engineering from The University of Texas at Austin, USA, in 1999.  He joined the Motorola Semiconductor Division (later to become Freescale Semiconductor) in 1995 as an engineer and has since been working in the area of backend reliability, mainly addressing issues with electromigration, stress-induced voiding, and time-dependent dielectric breakdown.  From 2002 until 2009, he managed the interconnect reliability team in Freescale Semiconductor’s Technology Solutions Organization, mainly focusing on implementation of advanced, low-k dielectrics in the 65, 45, 32 and 22 nm nodes.  From 2007 until 2009, he was assigned to the IBM/Freescale Semiconductor Technology Alliance in Yorktown Heights and Hopewell Junction, NY.  He relocated back to Europe in 2010 to join GLOBALFOUNDRIES, Dresden, Germany, and subsequently the Fraunhofer Institute in 2011.