Share:Share

2013 T-ED Golden Reviewers

The ability of the IEEE Transactions on Electron Devices to publish high quality papers has always been, and will continue to be, critically dependent upon the generosity, expertise, and dedication of the reviewers who volunteer their time for this purpose.  The Editorial Board of T-ED wish to gratefully acknowledge the individuals inside and out of the Electron Devices Society who have so selflessly contributed to this effort.

The IEEE Transactions on Electron Devices List of Golden Reviewers for 2013

 

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

NameAffiliationCountry
Andreas Aal Volkswagen AG Germany
Hamdy Abd El Hamid Zewail City of Science and Technology Egypt
Katsumi Abe Tokyo Institute of Technology Japan
David Abe U.S. Naval Research Laboratory United States
Fabio Acerbi Politecnico di Milano Italy
Themistokles Afentakis Sharp Laboratories of America United States
Ashish Agrawal Penn State University United States
Shaikh Ahmed Southern Illinois University at Carbondale United States
Byung Tae Ahn Korea Advanced Inst. Of Science and Technology Korea
JungChak Ahn Samsung Electronics Co. Ltd Korea
Sujin Ahn Samsung Electronics Co. Ltd Korea
Deji Akinwande University of Texas at Austin United States
Anatoli Aksenchyk Belarusian State University of Informatics and Radioelectronics Belarus
Akin Akturk University of Maryland United States
Khairul Alam East West University Bangladesh
Syed Alam Everspin Technologies United States
Naushad Alam Indian Institute of Technology Roorkee India
Muhammad Alam Purdue University United States
Alfonso AlarcĂłn University of Paris-Sud France
Stefano Alberti Ecole Polytechnique Federale de Lausanne Switzerland
Ashkar Ali Intel Corporation United States
David Allee Arizona State University United States
Emre Alptekin IBM Semiconductor Research and Development Center United States
Pietro Altermatt University of Hannover Germany
Salvatore Amoroso University of Glasgow United Kingdom
Kyuhwan An Qualcomm Incorporated United States
Frédéric André Thales Electron Devices France
Andrey Andreev Raytheon KTech United States
Diing Shenp Ang Nanyang Technological University Singapore
Iltcho Angelov Chalmers University of Technology Sweden
Thomas Anthopoulous Imperial College London United Kingdom
Dimitri Antoniadis Massachusetts Institute of Technology United States
Marina Antoniou University of Cambridge United Kingdom
Jin-Ping Ao University of Tokushima Japan
Hideki Aono Renesas Technology Corporation Japan
Bernd Appelt ASE Group United States
Joerg Appenzeller Purdue University United States
Hideki Arakawa Powerchip Technology Corporation Taiwan
Aaron Arehart The Ohio State University United States
Hiroaki Arimura IMEC Belgium
Jean Daniel Arnould MINATEC France
Rajan Arora Georgia Institute of Technology United States
Antonio Arreghini IMEC Belgium
Subramaniam Arulkumaran Nanyang Technological University Singapore
Kamal Asadi Philips Research Laboratories Netherlands
Asen Asenov University of Glasgow United Kingdom
Peter Ashburn University of Southampton United Kingdom
Gary Atkinson Virginia Commonwealth University United States
Herve Aubert Institut National Polytechnique de Toulouse France
Juergen Auersperg Fraunhofer ENAS Germany
Charles Augustine Intel Corporation United States
Chris Auth Intel Corporation United States
Uygar Avci Intel Corporation United States
Mohamed Azize MIT United States
Top of page
Jeff Babcock Texas Instruments United States
Roman Baburske Infineon Technologies AG Germany
Giorgio Baccarani Universita di Bologna Italy
Hagyoul Bae Kookmin University Korea
In-Gyu Baek Samsung Electronics Co. Ltd Korea
Marise Bafleur LAAS-CNRS France
Maryam Baghini Indian Institute of Technology Bombay India
Eldad Bahat Treidel Ferdinand-Braun-Institut für Höchstfrequenztechnik Germany
Muhannad Bakir Georgia Institute of Technology United States
Alexander Balandin University of California at Riverside United States
Francis Balestra IMEP-LAHC France
Adam Balkcum Communications and Power Industries United States
Ibrahim Ban Intel Corporation United States
Kaustav Banerjee University of California at Santa Barbara United States
Sanjay Banerjee University of Texas at Austin United States
Ruqiang Bao IBM United States
Emanuele Baravelli UniversitĂ  di Bologna Italy
Marie Garcia Bardon IMEC Belgium
John Barker University of Glasgow United Kingdom
Hugh Barnaby Arizona State University United States
Amelia Barreiro Columbia University United States
Joaquim Barroso National Institute for Space Research Brazil
Hans-Joachim Barth Intel Mobile Communications Germany
James Basham National Institute of Standards and Technology United States
Paul Basore Hanwha Solar America United States
Mark Basten Northrop Grumman Corporation United States
Baidyanath Basu College of Engineering & Technology India
Dipanjan Basu Intel Corporation United States
Friedhelm Bauer ABB Switzerland Ltd Switzerland
Joan Bausells Centre Nacional de Microelectronica Spain
Stephen Bayne Texas Tech University United States
Antonios Bazigos Ecole Polytechnique Federale de Lausanne Switzerland
Behtash Behin-Aein GlobalFoundries United States
Ashkan Behnam University of Illinois at Urbana Champaign United States
Salvatore Bellone University of Salerno Italy
Enrico Bellotti Boston University United States
Didier Belot STMicroelectronics France
Brahim Benbakhti Liverpool John Moores University United Kingdom
Steven Bentley GlobalFoundries United States
Dionisis Berdebes Purdue University United States
CĂ©dric Bermond IMEP-LAHC France
Gennadi Bersuker International Sematech United States
Marc Bescond IM2NP France
Navakanta Bhat Indian Institute of Science India
Sitangshu Bhattacharya Indian Institute of Science India
Ashraful Bhuiyan Khulna University of Engineering and Technology Bangladesh
Krishna Bhuwalka TSMC Taiwan
Rodrigo Bianchi University of California at Berkeley United States
Olivier Bichler CEA LIST LCE France
Markus Bina Institute for Microelectronics Austria
Dalibor Biolek Brno University of Technology Czech Republic
Philip Birtel Thales Group Germany
Arnab Biswas Ecole Polytechnique Federale de Lausanne Switzerland
Monica Blank Communications and Power Industries United States
Serge Blonkowski STMicroelecronics France
Ilan Bloom Saifun Semiconductors Israel
Heinz Bohlen CPI International Inc. Switzerland
Sylvain Bollaert IEMN France
Colombo Bolognesi ETH ZĂĽrich Switzerland
Fabrizio Bonani Politecnico di Torino Italy
Mattia Boniardi Micron Semiconductor Italia Italy
John Booske University of Wisconsin-Madison United States
Theodorian Borca-Tasciuc Rensselaer Polytechnic Institute United States
Ernst Bosch Thales Electron Devices GmbH Germany
Gianluca Boselli Texas Instruments United States
Gijs Bosman University of Florida United States
Arnaud Bournel Universite Paris Sud France
Timothy Boykin University of Alabama at Huntsville United States
Vladimir L. Bratman Institute of Applied Physics, Russian Academy of Sciences Russia
Danick Briand Institute of Microtechnology Switzerland
Ivor Brodie University of California at Davis United States
Per Broms Thin Film Electronics AB Sweden
David Brown HRL Laboratories United States
Dan Buca Forschungszentrum Julich GmbH Germany
Fabian Bufler Synopsys Schweiz GmbH Switzerland
Koen Buisman TU Delft Netherlands
Constantin Bulucea Texas Instruments United States
David Burdeaux Freescale Semiconductor United States
Graeme Burt Lancaster University United Kingdom
Erik Bury IMEC Belgium
Heinz Busta University of Illinois at Chicago United States
Top of page
Florian Cacho STMicroelectronics France
Xiao Cai Hong Kong Applied Science and Technology Research Institute Company Hong Kong
Yong Cai Suzhou Institute of Nano-Tech & Nano-Bionics China
Benton Calhoun University of Virginia United States
Fernando Calle Universidad Politécnica de Madrid Spain
Jason Campbell National Institute of Standards and Technology United States
Joe Campbell University of Virginia United States
Eugenio Cantatore Eindhoven University of Technology Netherlands
Yu (Kevin) Cao Arizona State University United States
Shuqing Cao Stanford University United States
Xian-An Cao West Virginia University United States
Federica Cappelluti Politecnico di Torino Italy
Andrew Carlson Advanced Micro Devices United States
Bruce Carlsten Los Alamos National Laboratory United States
Malcolm Carroll Sandia National Laboratories United States
VĂ©ronique Carron CEA-LETI/D2NT France
Giorgio Casinovi Georgia Institute of Technology United States
Fritz Caspers CERN Switzerland
Mikael Casse CEA Grenoble France
E V Castro University of Porto Portugal
Roman Caudillo Intel Corporation United States
Nicolas Cavassilas IM2NP CNRS France
Robert Caverly Villanova University United States
Ralph Cavin SRC United States
Peter Centen Grass Valley Netherlands
Junseok Chae Arizona State University United States
Yang Chai Stanford University United States
Anjan Chakravorty Indian Institute of Technology Madras India
Mansun Chan Hong Kong University of Science and Technology Hong Kong
R.D. Chang Chang Gung University Taiwan
Hsu-Yu Chang Intel Corporation United States
Yao-Wen Chang Macronix International Co. Ltd. Taiwan
Sheng-Po Chang National Cheng Kung University Taiwan
Shoou-Jinn Chang National Cheng Kung University Taiwan
Ting-Chang Chang National Sun Yat-Sen University Taiwan
Meng-Fan Chang National Tsing Hua University Taiwan
Tsun-Hsu Chang National Tsing Hua University Taiwan
Yoon Jung Esther Chang University of California at Los Angeles United States
Kuei-Shu Chang-Liao National Tsing Hua University Taiwan
Alain Chantre STMicroelectronics France
Yulin Chao Intel Corporation United States
Tien-Sheng Chao National Chiao Tung University Taiwan
Yogesh Chauhan Indian Institute of Technology Kanpur India
Qiang Brian Chen Agilent Technologies United States
Kevin  Chen Hong Kong University of Science and Technology Hong Kong
Fen Chen IBM Microelectronics Division United States
Shih-Hung Chen IMEC Belgium
Yang-Yin Chen IMEC Belgium
Fred Chen Industrial Technology Research Institute Taiwan
Yusheng Chen Industrial Technology Research Institute Taiwan
Wei-Chen Chen Macronix International Co. Ltd. Taiwan
Yan-Ru Chen Macronix International Co. Ltd. Taiwan
Pang-Shiu Chen Minghsin University of Science and Technology Taiwan
Chang-Lee Chen MIT United States
Dunjun Chen Nanjing University China
Jone Chen National Cheng Kung University Taiwan
Hsiang Chen National Chi Nan University Taiwan
Kuan-Neng Chen National Chiao Tung University Taiwan
Ming-Jer Chen National Chiao Tung University Taiwan
Shih-Yuan Chen National Taiwan University Taiwan
Hsiao-Chin Chen National Taiwan University of Science and Technology Taiwan
Hong-Yan Chen Purdue University United States
Xiaodong Chen Queen Mary University of London United Kingdom
Jing Chen Shanghai Institute of Microsystem and Information Technology China
Xiangyu Chen Stanford University United States
Shih-Ching Chen United Microelectronics Corporation United States
Han-Ping Chen University of California at San Diego United States
Wanjun Chen University of Electronic Science and Technology of China China
Xingbi Chen University of Electronic Science and Technology of China China
Yiran Chen University of Pittsburgh United States
Cheng-Wei Cheng IBM United States
Kangguo Cheng IBM Semiconductor Research and Development Center United States
Chun-Hu Cheng National Taiwan Normal University Taiwan
Tom Cheng RF Micro Devices United States
Binjie Cheng University of Glasgow United Kingdom
Karim Cherkaoui Tyndall National Institute Ireland
Winston Chern Massachusetts Institute of Technology United States
David Chernin Science Applications International Corp. United States
(Charles) Kin Cheung NIST United States
Nathan Cheung University of California at Berkeley United States
Pascal Chevalier STMicroelectronics France
Meng-Hsueh Chiang National Ilan University Taiwan
Te-Kuang Chiang National University of Kaohsiung Taiwan
Wei-Chih Chien Macronix International Co. Ltd. Taiwan
Po-Yen Chien University of California at Los Angeles United States
Albert Chin National Chiao Tung University Taiwan
Alessandro Chini UniversitĂ  di Modena e Reggio Emilia Italy
Hsien-Chin Chiu Chang Gung University Taiwan
Moonju Cho IMEC Belgium
Won-Ju Cho Kwangwoon University Korea
Edward Cho Yonsei University Korea
Harsha Choday Purdue University United States
Yang-Kyu Choi Korea Advanced Inst. Of Science and Technology Korea
Sang Choi NASA Langley Research Center United States
Woo Young Choi Sogang University Korea
Hoi Wai Choi The University of Hong Kong Hong Kong
Eunmi Choi Ulsan National Institute of Science and Technology Korea
Sung-Jin Choi University of California at Berkeley United States
Woon-Seng Choong Lawrence Berkeley National Laboratory United States
Hsueh-Liang Chou TSMC Taiwan
Masud Chowdhury University of Illinois at Chicago United States
Latha Christie MTRDC India
Jan Chroboczek ENSERG/IMEP/LHAC France
Rongming Chu HRL Laboratories United States
Ta-ya Chu National Research Council Canada Canada
Min Chu Texas Instruments United States
Chi On Chui University of California at Los Angeles United States
Jinwook Chung Massachusetts Institute of Technology United States
Hyun Jong Chung Samsung Advanced Institute of Technology Korea
Fabio Cicoira Ecole Polytechnique de Montreal Canada
Volker Cimalla Fraunhofer Institut für Angewandte Festkörperphysik Germany
Ivan Ciofi IMEC Belgium
David Clark Raytheon Systems Limited United Kingdom
Martin Claus Technische Universität Dresden Germany
Jean-Pierre Colinge TSMC Taiwan
Luis Conde Technical University of Madrid Spain
Gavin Conibeer University of New South Wales Australia
Daniel Connelly Acorn Technologies United States
Claudio Contiero ST Microelectronics Italy
Andrea Corrion HRL Laboratories United States
Stefan Cosemans IMEC Belgium
Sergio Cova Politecnico di Milano Italy
John Cowles Analog Devices United States
Antonio Crespo Air Force Research Laboratory United States
Sorin Cristoloveanu IMEP-LAHC France
Kristof Croes IMEC Belgium
Brian Crone Los Alamos National Laboratory United States
R. B. M. Cross De Montfort University United Kingdom
Adrian Cross University of Strathclyde United Kingdom
David Crouse City College of New York United States
Felice Crupi Universita della Calabria Italy
Ning Cui Tsinghua University China
Qiang Cui University of Central Florida United States
Michael Current Current Scientific United States
Top of page
Mingzhi Dai Chinese Academy of Sciences China
Min Dai IBM United States
Gilles Dambrine IEMN France
Chris Dames University of California at Berkeley United States
Morris Daniel Intel Corporation United States
Amitava DasGupta Indian Institute of Technology Madras India
Sudeb Dasgupta Indian Institute of Technology Roorkee India
Subrata Datta Microwave Tube Research & Development Centre India
Suman Datta Penn State University United States
John David The University of Sheffield United Kingdom
Shadi Dayeh University of California at San Diego United States
James Dayton Teraphysics Corporation United States
Jean-Claude De Jaeger IEMN France
Luca De Michielis Ecole Polytechnique Federale de Lausanne Switzerland
Barbara De Salvo CEA-LETI MINATEC France
Michelly de Souza Centro Universitario da FEI Brazil
Maria De Souza Sheffield University United Kingdom
William Deal Northrop Grumman Corporation United States
John DeBrosse IBM Research United States
M. Jamal  Deen McMaster University Canada
Robin Degraeve IMEC Belgium
Nima Dehdashti Akhavan Microelectronic Research Group Australia
Jesus del Alamo Massachusetts Institute of Technology United States
Sylvain Delage Alcatel-Thales III-V Lab France
Dean DeLongchamp NIST United States
Wanling Deng College of Information Science and Technology China
Jie (Thomas) Deng IBM United States
Jie Deng IBM United States
Marie Denison Texas Instruments United States
Shweta Deora Sematech United States
Yannick Deshayes IMS LAB France
Hemant Deshpande Intel Corporation United States
Gajanan Dessai Arizona State University United States
Amos Dexter Lancaster University United Kingdom
Sarit Dhar Auburn University United States
Siddhartha Dhar Technical University of Vienna Austria
Massimiliano Di Ventra University of California at San Diego United States
Aldo DiCarlo University of Rome Italy
Jean Dijon CEA France
Linten Dimitri IMEC Belgium
Shi-Jin Ding Fudan University China
Abhisek Dixit IBM India Private Limited India
Philippe Dollfus Universite Paris Sud France
Simona Donati-Guerrieri Politecnico di Torino Italy
Gerben Doornbos TSMC Belgium
Rodrigo Doria Centro Universitário da FEI Brazil
Richard Dorrance University of California at Los Angeles United States
Fergus Downey Analog Devices Ireland
Rachid Driad Fraunhofer IAF Germany
Francesco Driussi UniversitĂ  degli Studi di Udine Italy
Pei-Ying Du Macronix International Co. Ltd. Taiwan
Monuko du Plessis University of Pretoria South Africa
Zhaoyun Duan University of Electronic Science and Technology of China China
Juan Duarte University of California at Berkeley United States
Emmanuel Dubois IEMN France
Jean-Yves Duboz CRHEA, CNRS France
Olgierd Dumbrajs University of Latvia Latvia
Geoffrey Dunn University of Aberdeen United Kingdom
Indranath Dutta Washington State University United States
Shubham Dutta Gupta National University of Singapore Singapore
Top of page
Kimberley W Eccleston University of Canterbury New Zealand
Dmitri Efetov Columbia University United States
Takashi  Egawa Nagoya Institute of Technology Japan
Heribert Eisele University of Leeds United Kingdom
Mostafa Emam Université catholique de Louvain Belgium
Kazuhiko Endo AIST Japan
Geert Eneman IMEC Belgium
Daniel Engelsen Associação Brasileira de Informática Brazil
Mark Eriksson University of Wisconsin-Madison United States
Masayoshi Esashi Tohoku University Japan
Top of page
Antonio Facchetti Northwestern University United States
Georgios Fagas University College Cork Ireland
Adrian Faigon CONICET-UBA Argentina
Ming-Long Fan National Chiao Tung University Taiwan
Ching-Lin Fan National Taiwan University of Science and Technology Taiwan
Tian Fang University of Notre Dame United States
Guojia Fang Wuhan University China
Farzan Farbiz Texas Instruments United States
Damon Farmer IBM T. J. Watson Research Center United States
Mukta Farooq IBM Microelectronics Division United States
Esmat Farzana Bangladesh University of Science & Technology Bangladesh
Patrick Fay University of Notre Dame United States
Susan Felch Ion Beam Services United States
Jinjun Feng Beijing Vacuum Electronics Research Institute China
L.-P. Feng Northwestern Polytechnical University China
Montserrat Fernández-Bolanos Ecole Polytechnique Federale de Lausanne Switzerland
Mark Field Teledyne Scientific & Imaging LLC United States
Gianluca Fiori University of Pisa Italy
Massimo Fischetti University of Texas at Dallas United States
Tor Fjeldly Norwegian University of Science and Tech Norway
Stefan Flachowsky Globalfoundries Dresden Module One LLC & Co. KG Germany
Dan Fleetwood Vanderbilt University United States
David Flores IMB-CNM (CSIC) Spain
Helmut Föll Christian-Albrechts-University of Kiel Germany
Kean Fong ANU College of Engineering & Computer Science Australia
Xuanyao Fong Purdue University United States
Elvira Fortunato FCT UNL Portugal
David Frank IBM T. J. Watson Research Center United States
Sebastien Fregonese CNRS France
Martin Frey Intel Corporation United States
Peter Friedrichs Infineon Technologies AG Germany
C. Daniel Frisbie University of Minnesota United States
Jenna Fu Georgia Institute of Technology United States
Shosuke Fujii Toshiba Corporation Japan
Ichiro Fujiwara Sony Corporation Japan
Mikhail Fuks University of New Mexico United States
Hidenobu Fukutome Samsung Electronics Co. Ltd Korea
Yoshiaki Fukuzumi Toshiba Corporation Japan
Tuyoshi Funaki Osaka University Japan
Mauro Furno Dresden University of Technology Germany
Mamoru Furuta Kochi University of Technology Japan
Top of page
Georg Gaertner Philips Research Germany
Philippe Galy STmicroelectronics France
Francisco Gamiz Universidad de Granada Spain
Kartik Ganapathi University of California at Berkeley United States
M.S. Gandi Anna University Chennai India
Swaroop Ganguly Indian Institute of Technology Bombay India
Udayan Ganguly Indian Institute of Technology Bombay India
Gerd Gantenbein Karlsruhe Institute of Technology Germany
Jianjun Gao East China Normal University China
Feng Gao Massachusetts Institute of Technology United States
Yunfei Gao Purdue University United States
Christophe Gaquiere IEMN France
Davide Garetto IBM France
Xavier Garros CEA Grenoble France
Gaël Gautier Université de Tours France
Gerwin Gelinck Philips High-Tech Campus Netherlands
Jan Genoe IMEC Belgium
Hubert George Intel Corporation United States
Louis Gerrer University of Glasgow United Kingdom
Fadhel Ghannouchi University of Calgary Canada
Andrea Ghetti Micron Semiconductor Italia Italy
GĂ©rard Ghibaudo IMEP-LAHC France
Gabriella Ghidini STMicroelectronics Italy
Tushar Ghosh E2V Technologies United Kingdom
Horst Gieser Fraunhofer Institute Germany
Gennady Gildenblat Arizona State University United States
David Gilmer Sematech United States
Benito Gimeno University of Valencia Spain
Naum Ginzburg Institute of Applied Physics, Russian Academy of Sciences Russia
Mikhail Yu Glyavin Institute of Applied Physics, Russian Academy of Sciences Russia
Elena Gnani Universita di Bologna Italy
Antonio Gnudi Universita di Bologna Italy
Akira Goda Micron Technology Inc. United States
Dan Goebel Jet Propulsion Laboratory United States
Ashish Goel Broadcom Corporation United States
Isabelle Goffioul-Ferain GlobalFoundries United States
Tomas Gonzalez Universidad de Salamanca Spain
Fernando González-Posada CEA- CNRS France
Stephen Goodnick Arizona State University United States
Wolfgang Gös Technical University of Wien Austria
Arthur Gossard University of California at Santa Barbara United States
Harald Gossner Intel Corporation Germany
Bogdan Govoreanu IMEC Belgium
Wladek Grabinski Ecole Polytechnique Federale de Lausanne Switzerland
Jacques Graffeuil CNRS ; LAAS France
Samuel Graham Georgia Institute of Technology United States
Jan Grahn Chalmers University of Technology Sweden
Jesus Grajal Technical University of Madrid Spain
Tibor Grasser Technical University of Vienna Austria
Roberto Grassi University of Bologna Italy
Michael Green Varian Medical Systems United States
David Greve Carnegie Mellon University United States
Alessio Griffoni IMEC Belgium
Patrick Grillot Philips Lumileds Lighting United States
Mark Griswold OnSemiconductor United States
Erich Grossman NIST United States
Paul Grudowski Freescale Semiconductor United States
Jiangjiang Gu Intel Corporation United States
Jane Gu University of Florida United States
Ximeng Guan IBM United States
Mathieu Guerin IM2NP France
Abik Del Guerra Universita di Pisa Italy
Suresh Gundapaneni Indian Institute of Technology Bombay India
Dechao Guo IBM United States
Yufeng Guo Nanjing University of Posts and Telecommunications China
Jyh-Chyurn Guo National Chiao Tung University Taiwan
Jian Guo OmniVision Technologies United States
Jing Guo University of Florida United States
Radhey Gupta Maharaja Agrasen Institute of Technology India
Sumeet Gupta Purdue University United States
Suyog Gupta Stanford University United States
Mridula Gupta University of Delhi India
Top of page
Daewon Ha Samsung Electronics Co. Ltd Korea
Tae-Jun Ha The University of Texas at Austin United States
Masum Habib University of California at Los Angeles United States
Wilfried Haensch IBM T. J. Watson Research Center United States
Xu Haisheng East China University of Science & Technology China
Jean-Jacques Hajjar Analog Devices United States
Kimimori Hamada Toyota Motor Corporation Japan
Hamdy Hamid Universitat Rovira i Virgili Spain
Genquan Han Chongqing University China
Jin-Woo Han NASA Ames Research Center United States
Alex Hands AWE United Kingdom
Masami Hane Renesas Electronics Corporation Japan
Henri Happy Institut d Electronique et de Micro. du Nord France
Akito Hara Tohoku Gakuin University Japan
Hans Hartnagel Technische Universität Darmstadt Germany
Tsuyoshi Hasegawa National Institute for Materials Science Japan
Pouya Hashemi IBM United States
Masanori Hashimoto Osaka University Japan
Tamotsu Hashizume Hokkaido University Japan
Yoshihiro Hayashi Renesas Electronics Corporation Japan
Majeed Hayat University of New Mexico United States
Gang He Anhui University China
Yandong He Institute of Microelectronics China
Jin He Peking University China
Thomas Heine Jacobs University Bremen Germany
Eric Heller Air Force Research Laboratory United States
Heino Henke Technische Universitaet Berlin Germany
Howard Herr Texas Instruments United States
Reinhard Herzer Semikron Elektronik GmbH &Co KG Germany
Oliver Hilt FBH Berlin Germany
Daniel Hines Laboratory for Physical Sciences United States
Christopher Hinkle University of Texas at Dallas United States
Kazuyuki Hirama NTT Basic Research Laboratories Japan
Digh Hisamoto Hitachi Ltd. Japan
Hans Hjelmgren Chalmers University of Technology Sweden
ChiaHua Ho National Nano Device Laboratories Taiwan
Paul Ho University of Texas at Austin United States
Chris Hobbs Sematech United States
Allon Hochbaum University of California at Irvine United States
Marc Hodes Tufts University United States
Brad Hoff Air Force Research Laboratory United States
Anthony Holland RMIT University Australia
Thomas Holtij Technische Hochschule Mittelhessen Germany
Changsoo Hong Freescale Semiconductor United States
Terence Hook IBM United States
Hideki Horii Samsung Electronics Co. Ltd Korea
Susumu Horita Japan Advanced Institute of Science and Technology Japan
Tzyy-Sheng Horng National Sun Yat-Sen University Taiwan
Ken Hoshino Sharp Laboratories of America United States
Tuo-Hung Hou National Chiao Tung University Taiwan
Peter Houston University of Sheffield United Kingdom
Harold J. Hovel IBM United States
Phil Hower Texas Instruments United States
Judy Hoyt Massachusetts Institute of Technology United States
Chih-Cheng Hsieh National Tsing Hua University Taiwan
Tzu-Hsuan (Bruce) Hsu Macronix International Co. Ltd. Taiwan
Shawn Hsu National Tsing Hua University Taiwan
Fu-Lung Hsueh TSMC Taiwan
Chih-Wei Hu Macronix International Co. Ltd. Taiwan
Yongjie Hu Massachusetts Institute of Technology United States
Qianqian Huang Institute of Microelectronics, Peking University China
Chia-Tze Huang MXIC Taiwan
Shih-Cheng Huang MXIC Taiwan
Chih-Fang Huang National Tsing Hua University Taiwan
Chien-Jung Huang National University of Kaohsiung Taiwan
Xing Huang North Carolina State University United States
Sen Huang The Hong Kong University of Science and Technology Hong Kong
KC Huang TSMC Taiwan
Tsung-Ching Huang TSMC United States
Bo-Chao Huang University of California at Los Angeles United States
Rui Huang University of Texas at Austin United States
Alexandre Hubert SK Hynix Korea
Mantu Hudait Virginia Tech United States
Jaime Hueso German Aerospace Center (DLR) Germany
Raymond Hueting University of Twente Netherlands
Paul Hurley Tyndall National Institute Ireland
Geoffrey Hutchison University of Pittsburgh United States
Jin Hyun Hwang Hongik University Korea
Wan Sik Hwang Korea Aerospace University Korea
Hyunsang Hwang Pohang University of Science and Technology Korea
Yoosang Hwang Samsung Electronics Co. Ltd Korea
Top of page
Giuseppe Iannaccone University of Pisa Italy
Daniele Ielmini Politecnico di Milano Italy
Petar Igic Swansea University United Kingdom
Stefan Illy Karlsruhe Institute of Technology Germany
Kiju Im Samsung Mobile Display Korea
Giacomo Indiveri University of Zurich and ETH Zurich Switzerland
Benjamin  Iñiguez Universitat Rovira i Virgili Spain
V. Ioannou-Sougleridis IMEL/NCSR Demokritos Greece
Toshifumi Irisawa MIRAI-ASET Japan
Hidetoshi Ishida Matsushita Electric Industrial Co. Ltd Japan
Naz Islam University of Missouri-Columbia United States
Ahmad Islam Wright-Patterson Air Force Base United States
Kazuhiro Ito Osaka University Japan
R. Lawrence Ives Calabazas Creek Research Inc United States
Hadi Izadi RIKEN Quatitative Biology Center Japan
Top of page
Warren Jackson HP Labs United States
Richard Jaeger Auburn University United States
Ankit Jain Purdue University United States
Colt James Texas Tech University United States
Chia Jan Intel Corporation United States
Meir Janai Saifun Semiconductors Israel
Roland Jancke Fraunhofer IIS/EAS Germany
Moon Hyung Jang University of Pennsylvania United States
Nicholas Jankowski U.S. Army Research Laboratory United States
John Jelonnek Karlsruhe Institute of Technology Germany
Hyeongtag Jeon Hanyang University Korea
Jongwook Jeon Seoul National University Korea
Doo Seok Jeong Korea Institute of Science and Technology Korea
Tak Jeong Korea Photonics Technology Institute Korea
Rakesh G. Jeyasingh Stanford University United States
Ritesh Jhaveri Intel Corporation United States
Qimeng Jiang Hong Kong University of Science and Technology Hong Kong
Xudong Jiang Princeton Lightwave United States
Hongwen Jiang University of California at Los Angeles United States
Guo Jianhua University of Electronic Science and Technology of China, Chengdu China
Bin Jie Xiemen University China
David Jiménez Universitat Autònoma de Barcelona Spain
Juan Jimenez Tejada Universidad de Granada Spain
Leslie Jimison NIST United States
Seonghoon Jin University of Massachusetts United States
Renuka Jindal University of Louisiana at Lafayette United States
Yogesh Joglekar Indiana University – Purdue University Indianapolis United States
Jungwoo Joh Texas Instruments United States
Robert Johansson OmniVision Technologies Norway
Jeffrey Johnson IBM United States
Mark Johnson Naval Research Laboratory United States
Colin Joye Naval Research Laboratory United States
Andre Juge STMicroelectronics France
Seong-Ook Jung Yonsei University Korea
Christoph Jungemann Bundeswehr University Germany
Top of page
Kristen Kaasbjerg Technical University of Denmark Denmark
Tetsu Kachi Toyota Central R&D Labs., Inc. Japan
Christoph Kadow Infineon Technologies AG Germany
Kuniyuki Kakushima Tokyo Institute of Technology Japan
Karol Kalna Swansea University United Kingdom
Pankaj Kalra SanDisk Corporation United States
Deepak Kamalanathan Adesto Technologies United States
Yukihiro Kaneko Panasonic Corporation Japan
Jinfeng Kang Peking University China
Sung-Mo (Steve) Kang University of California at Santa Cruz United States
Kuo-Hsing Kao IMEC Belgium
Gautam Kapila Texas Instruments United States
Sato Katsumi Mitsubishi Electric Corporation Power Device Works Japan
Guruprasad Katti IMEC Belgium
Thomas Kauerauf IMEC Belgium
Jack Kavalieros Intel Corporation United States
Omid Kavehei University of Melbourne Australia
Yusuke Kawaguchi Toshiba Corporation Japan
Atsushi Kawasumi Toshiba Corporation Japan
Savas Kaya Ohio University United States
Thomas Kazior Raytheon RF Components United States
Ming-Dou Ker National Chiao Tung University Taiwan
Ali Khakifirooz IBM Research at Albany Nanotech United States
Ata Khalid University of Glasgow United Kingdom
Sourabh Khandelwal NTNU Norway Norway
Neerav Kharche Brookhaven National Laboratory United States
Yasin Khatami University of California at Santa Barbara United States
Ahmed Kiani University of Cambridge United Kingdom
Valeriya Kilchytska Catholic University of Leuven Belgium
Yeong-Seuk Kim Chung-Buk National University Korea
Jae-Joon Kim IBM T. J. Watson Research Center United States
SangBum Kim IBM T. J. Watson Research Center United States
Sungho Kim Korea Advanced Inst. Of Science and Technology Korea
Taehoon Kim Micron Technology Inc. United States
Ki Wook Kim North Carolina State University United States
Soo Youn Kim Purdue University United States
Jongun Kim Samsung Electronics Co. Ltd Korea
Woo Soo Kim Simon Fraser University Canada
Tsunenobu Kimoto Kyoto University Japan
Mutsumi Kimura Ryukoku University Japan
Ya-Chin King National Tsing Hwa University Taiwan
Toshiaki Kirihata IBM United States
Koji Kita The University of Tokyo Japan
Hagen Klauk Max Planck Institute for Solid State Research Germany
Hamilton Klimach Universidade Federal Do Rio Grande Do Sul Brazil
Gerhard Klimeck Purdue University United States
Alexander Kloes Technische Hochschule Mittelhessen Germany
Wolfram Knapp Universitat Magdeburg Germany
Irena Knezevic University of Wisconsin-Madison United States
Gerhard Knoblinger Infineon Technologies Austria AG Austria
Kenya Kobayashi Renesas Electronics Corporation Japan
Seong Jin Koh University of Texas at Arlington United States
Shao-Ming Koh National University of Singapore Singapore
Juergen Kolb Leibniz-Institute for Plasma Science and Technology Germany
Kyung-Hoae Koo Intel United States
Hans Koops HaWilKo GmbH Germany
Martin Kordesch Ohio University United States
Guenter Kornfeld Kornfeld Plasma & Microwave Consulting Germany
Carol Kory ANALEX Corporation United States
Chandrasekara Kothandaraman IBM United States
Roza Kotlyar Intel Corp United States
Anil Kottantharayil Indian Institute of Technology Bombay India
Adil Koukab EPFL Switzerland
Alexey Kovalgin University of Twente Netherlands
Richard Kowalczyk L-3 Communications Electron Technologies, Inc. United States
Masato Koyama Toshiba Corporation Japan
Yusuke Kozuka University of Tokyo Japan
Abhinav Kranti Indian Institute of Technology  Indore India
Ken Kreischer Northrop Grumman Corporation United States
Ananthanarayanan Krishnamoorthy National University of Singapore Singapore
Martin Kuball University of Bristol United Kingdom
Tillmann Kubis Purdue University United States
Haldun Kufluoglu Texas Instruments United States
Kelin Kuhn Intel Corporation United States
Jaydeep Kulkarni Intel Corporation United States
Yuki Kumagai Tohoku University Japan
Kazuhide Kumakura NTT Corporation Japan
Hideya Kumomi Tokyo Institute of Technology Japan
Kazuaki Kunihiro NEC Corporation Japan
Cheng Kuo National Chiao Tung University Taiwan
Dan Kuylenstierna Chalmers University of Technology Sweden
Jan Kuzmik Slovak Academy of Sciences Slovakia
Masaaki Kuzuhara University of Fukui Japan
Ioannis Kymissis Columbia University United States
Top of page
Antonio La Magna Consiglio Nazionale Delle Ricerche Italy
Giuseppe La Rosa IBM Microelectronics Division United States
Sheng-Chih Lai Macronix International Co. Ltd. Taiwan
Christophe Lallement University of Strasbourg France
Kai Tak Lam University of Florida United States
Luigia Lanni KTH Royal Institute of Technology Sweden
Jean Larour Ecole Polytechnique France
Livio Lattanzio Ecole Polytechnique Federale de Lausanne Switzerland
Isaac Lauer IBM United States
Stefan Lauxtermann Sensor Creations United States
James F. Lazar HRL Laboratories United States
Jean-Pierre Leburton University of Illinois at Urbana-Champaign United States
Edward Lee Arizona State University United States
Ching-Sung Lee Feng Chia University Taiwan
Seho Lee Hynix Korea
Sungjae Lee IBM Microelectronics Division United States
Kwyro Lee Korea Advanced Inst. Of Science and Technology Korea
Sung-Nam Lee Korea Polytechnic University Korea
H.M. Lee Kyonggi University Korea
Jung-Hee Lee Kyungpook National University Korea
Dai-Ying Lee Macronix International Co. Ltd. Taiwan
Feng-Ming Lee Macronix International Co. Ltd. Taiwan
Ming-Hsiu Lee Macronix International Co. Ltd. Taiwan
Dong Seup Lee Massachusetts Institute of Technology United States
Hyung-Seok Lee Massachusetts Institute of Technology United States
Kyeong-Jae Lee MIT Korea
Jae-Duk Lee Samsung Electronics Co. Ltd Korea
KwangWoo Lee Samsung Electronics Co. Ltd Korea
Kyong Taek Lee Samsung Electronics Co. Ltd Korea
Jong-Ho Lee Seoul National University Korea
Jack Lee The University of Texas at Austin United States
Kangwook Lee Tohoku University Japan
John Lees University of Leicester United Kingdom
Torsten Lehmann University of New South Wales Australia
Po-Hsun Lei National Formosa University Taiwan
Wei Lei Southeast University China
Bernardo Leite Federal University of Parana Brazil
Max Lemme University of Siegen Germany
Gregory Leung University of California at Los Angeles United States
Anthony Levi University of Southern California United States
Peter Levine SRI International United States
Michael Levinshtein Ioffe Institute Russia
James Li HRL Laboratories United States
Baozhen Li IBM United States
Ming Li Institute of Microelectronics China
Xiaojun Li Intel Corporation United States
Yan Li Intel Corporation United States
Yufeng (Ryan) Li Luminus Devices United States
Rui Li Qualcomm Incorporated United States
Zhongda Li Rensselaer Polytechnic Institute United States
Chonghe Li Shanghai University China
Hong Li University of California at Santa Barbara United States
Leijun Li Utah State University United States
Chuanxin Lian Global Communication Semiconductors, Inc. United States
Gengchiau Liang National University of Singapore Singapore
Yung Liang National University of Singapore Singapore
Fujiang Liao Bejing Vacuum Electronics Research Institute China
Kwan-Yong Lim Texas Instruments United States
Francois Lime Universitat Rovira i Virgili Spain
Chung-Hsun Lin IBM United States
Dennis Lin IMEC Belgium
Yu-Yu Lin Macronix International Co. Ltd. Taiwan
Shian Jyh Lin Nanya Technology Corporation Taiwan
Yu-Shyan Lin National Dong Hwa University Taiwan
Hao-Hsiung Lin National Taiwan University Taiwan
Chrong-Jung Lin National Tsing Hua University Taiwan
Erik Lind Lund University Sweden
Chris Lingwood Lancaster University United Kingdom
Heiner Linke Lund University Sweden
Eike Linn RWTH Aachen University Germany
Yang Liu IBM United States
Ming Liu Institute of Microelectronics, Chinese Academy of Sciences China
Sandra Liu International Rectifier Corporation United States
Qingmin Liu MEMC Electronic Materials, Inc. United States
Po-Tsun Liu National Chiao Tung University Taiwan
Keng-Ming Liu National Dong Hwa University Taiwan
Chee-Wee Liu National Taiwan University Taiwan
Zi-Jheng Liu National Tsing Hwa University Taiwan
Xiaoyan Liu Peking University China
Wei Liu Photonic Corporation United States
Zhihong Liu Singapore-MIT Alliance for Research and Technology Singapore
Lilin Liu Sun Yat-Sen University China
James Lloyd SUNY Albany United States
Guo-Qiang (Patrick) Lo Institute of Microelectronics Singapore
Roger Lo Macronix International Co. Ltd. Taiwan
Yu-Hwa Lo University of California at San Diego United States
Saurabh Lodha Indian Institute of Technology Bombay India
Wei-Yip Loh International Sematech United States
Maria Antonietta Loi University of Groningen Netherlands
Richard Lossy Ferdinand-Braun-Institut für Höchstfrequenztechnik Germany
Wen-Shiung Lour National Taiwan Ocean University Taiwan
David Lu Fuji Electric Device Technology Japan
Zhichao Lu GlobalFoundries United States
Bin Lu MIT United States
Hai Lu Nanjing University China
Tien-Chang Lu National Chiao Tung University Taiwan
Chao Lu Purdue University United States
Yeqing Lu Synopsys Inc. United States
Wei Lu University of Michigan United States
Yang Lu Volterra Semiconductor Inc United States
Mathieu Luisier ETH ZĂĽrich Switzerland
Mark Lundstrom Purdue University United States
Lan Luo IBM United States
Jieying Luo Stanford University United States
Xiao Rong Luo University of Electronic Science and Technology of China China
Serge Luryi State University of New York at Stony Brook United States
Josef Lutz Chemnitz University of Technology Germany
Keith Lyon Cornell University United States
Top of page
Massimo Macucci Universita di Pisa Italy
Koichi Maezawa University of Toyama Japan
Paolo Magnone University of Bologna Italy
Ravi Mahajan Intel Corporation United States
Vinayak Mahajan University of Louisiana at Lafayette United States
Souvik Mahapatra Indian Institute of Technology Bombay India
Zohaib Mahmood MIT United States
Kausik Majumdar Sematech United States
Abhijit Mallik University of Calcutta India
Gunnar Malm Royal Institute of Technology (KTH) Sweden
Volodymyr Malyutenko Lashkaryov Institute of Semiconductor Physics Ukraine
Krishna Mandal University of South Carolina United States
Sanjeev Manhas Indian Institute of Technology Roorkee India
Jean-Claude Manifacier University of Montpellier France
Barmak Mansoorian Forza Silicon Corp. United States
Siegfried Mantl Forschungszentrum Julich GmbH Germany
Denis Marcon IMEC Belgium
Viktor Maric Intel Mobile Communications Germany
Elie Maricau Katholieke Universiteit Leuven Belgium
Luigi Mariucci CNR-IMM Italy
Stanislav Markov The University of Hong Kong Hong Kong
Tobin Marks Northwestern University United States
Andrew Marshall Lancaster University United Kingdom
Koen Martens IMEC Belgium
M. Martens TU Berlin Germany
Antonio Martinez Swansea University United Kingdom
Sebastien Martinie CEA-LETI MINATEC France
Rodrigo Martins New University of Lisbon Portugal
Muhammad Masuduzzaman Purdue University United States
Javier Mateos Universidad de Salamanca Spain
Mallory Mativenga Kyung Hee University Korea
Takashi Matsukawa AIST Japan
Mieko Matsumura Hitachi Ltd. Japan
Philip Mawby University of Warwick United Kingdom
Colin McAndrew Freescale Semiconductor United States
R. Daniel McGrath Aptina Imaging United States
Keith McIntosh PV Lighthouse Australia
Shlomo Mehari Technion - Israel Institute of Technology Israel
Gaudenzio  Meneghesso Universita di Padova Italy
Matteo Meneghini Universita di Padova Italy
William Menninger L-3 Communications Electron Technologies, Inc. United States
Roberto Menozzi University of Parma Italy
Guy Meynants CMOSIS nv Belgium
Cecilia Mezzomo STMicroelecronics France
Loukas Michalas University of Athens Greece
Jurgen Michel MIT United States
Neal Mielke Intel Corporation United States
Hiroshi Miki Hitachi Ltd. Japan
Thomas Mikolajick TU Bergakademie Freiberg Germany
José Millán CNM-CSIC Spain
Renato Minamisawa Paul Scherrer Institut Switzerland
Enrique Miranda Universitat Autònoma de Barcelona Spain
Stan Mircea University of Virginia United States
Yasuyuki Miyamoto Tokyo Institute of Technology Japan
Hisao Miyazaki Toshiba Corporation Japan
Teruyoshi Mizutani University of Nagoya United States
Kurt Moen Georgia Institute of Technology United States
Peter Moens OnSemiconductor Belgium
S. Noor Mohammad Howard University United States
Nihar Mohapatra Indian Institute of Technology, Gandhinagar India
Oana Moldovan Universitat Autonoma de Barcelona Spain
Miguel Montes Bajo University of Bristol United Kingdom
Christian Monzio Compagnoni Politecnico di Milano Italy
Saurabh Mookerjea Intel Corporation United States
Farshad Moradi Aarhus University Denmark
Frédéric Morancho LAAS-CNRS France
Arkadiy Morgenshtein Technion - Israel Institute of Technology Israel
Nobuya Mori Osaka University Japan
Takashi Morie Kyushu Institute of Technology Japan
Yukinori Morita National Institute of Advanced Industrial Science and Technology Japan
Victor Moroz Synopsys Inc. United States
Despina Moschou NCSR Demokritos Greece
Kirsten Moselund IBM Research GmBH Switzerland
Vincent Mosser ITRON SAS France
Koichi Motoyama IBM Japan Japan
Chandra Mouli Micron Technology Inc. United States
Niko MĂĽnzenrieder ETH ZĂĽrich Switzerland
S. A. Z. Murad Universiti Malaysia Perlis Malaysia
Top of page
Myung-hee Na IBM Microelectronics Division United States
Azad Naeemi Georgia Institute of Technology United States
Kosuke Nagashio University of Tokyo Japan
Joe Nahas University of Notre Dame United States
Aneesh Nainani Stanford Univeristy United States
Yutaka Nakamura IBM Japan Japan
Lan Nan University of California at Los Angeles United States
Lis Nanver TU Delft Netherlands
Ettore Napoli University of Naples Italy
Federico Nardi Politecnico di Milano Italy
Androula Nassiopoulou NCSR Demokritos Greece
Shweta Natarajan Georgia Institute of Technology United States
Arokia Nathan Cambridge University United Kingdom
Kaushik Nayak Indian Institute of Technology Bombay India
Hasan Nayfeh IBM United States
Osama Nayfeh United States Army Research Laboratory United States
Jeff Neilson SLAC National Accelerator Laboratory United States
Neophytos Neophytou Technical University of Vienna Austria
Beng Koon Ng Nanyang Technological University Singapore
Geok Ing Ng Nanyang Technological University Singapore
Wai Tung Ng University of Toronto Canada
Khanh Nguyen Beam-Wave Research, Inc. United States
Viet Hung Nguyen Institute of Physics Viet Nam
Paul Nicollian Texas Instruments United States
Mizuhisa Nihei AIST Japan
Ljubica Nikolic University of Novi Sad Serbia
Dmitri Nikonov Intel Corporation United States
Amin Nikoozadeh Stanford University United States
Per-Ă…ke Nilsson Chalmers University of Technology Sweden
Yann Niquet CEA Grenoble France
Yann-Michel Niquet Institute for Nanosciences and Cryogenics France
D.S. Nirmal Karunya University India
Akira Nishiyama Tokyo Institute of Technology Japan
Tetsuya Nitta Renesas Electronics Corporation Japan
Kei Noda Kyoto University Japan
Kenji Nomura Tokyo Institute of Technology Japan
Bozidar Novakovic Purdue University United States
Nenad Novkovski Saints Cyril and Methodius University of Skopje Macedonia
Etienne Nowak CEA LETI MINATEC France
Gregory Nusinovich University of Maryland United States
Top of page
Nixon O Dalsa, Inc. Canada
Joachim Oberhammer KTH-Royal Institute of Technology Sweden
Dominic O'Brien University of Oxford United Kingdom
Brendan O'Connor North Carolina State University United States
Byoungchan Oh Seoul National University Korea
Tatsuya Ohguro Toshiba Corporation Japan
Jun Ohta Nara Institute of Science and Technology Japan
Phil Oldiges IBM United States
Yasuhisa Omura Kansai University Japan
Ichiro Omura Toshiba Corporation Japan
D.S. Ong Multimedia University United States
Kazuo Ono Hitachi. Ltd. Japan
Terrance O'Regan U.S. Army Research Laboratory United States
Xavier Oriols Universidad Autonoma de Barcelona Spain
Alexei Orlov University of Notre Dame United States
Ali Asghar Orouji Semnan University Iran
Adelmo Ortiz-Conde Universidad Simon Bolivar Venezuela
Sylvie Ortolland STMicroelectronics France
Kenichi Osada Hitachi Ltd. Japan
John M. Osepchuk Full Spectrum Consulting United States
Mohamed Osman Washington State University United States
Hiroyuki Ota National Institute of Advanced Industrial Science and Technology Japan
Nepomuk Otte University of California at Santa Cruz United States
Yijian Ouyang Maxim IC United States
Guillermo Oviedo Vela University of Utah United States
Mehmet Ozturk North Carolina State University United States
Top of page
Alvaro Padilla IBM United States
Andrea Padovani UniversitĂ  di Modena e Reggio Emilia Italy
Ioannis Pagonakis Karlsruhe Institute of Technology Germany
Marco Pala IMEP-LAHC France
Tomas  Palacios Massachusetts Institute of Technology United States
Vassil Palankovski Technical University of Vienna Austria
Vilius Palenskis Vilnius University Lithuania
Pierpaolo Palestri UniversitĂ  degli Studi di Udine Italy
Felix Palumbo CNEA-CAC Argentina
Tung-Ming Pan Chang Gung University Taiwan
Ci-Ling Pan National Tsing Hwa University Taiwan
Georgios Panagopoulos Purdue University United States
Alexander Panferov Togliatti State University Russia
Luigi Pantisano GlobalFoundries United States
Claudio Paoloni Lancaster University United Kingdom
Jong Mun Park Austriamicrosystems AG Austria
Il-Yong Park Dongbu HiTek United States
Chan-Hoon Park POSTECH Korea
Seung Hyun Park Purdue University United States
Chittor Parthasarathy ST Microelectronics India
Bertrand Parvais IMEC Belgium
John Pasour Naval Research Laboratory United States
Bradford Pate Naval Research Laboratory United States
Alan Paussa University of Udine Italy
Paolo Pavan Universita di Modena e Reggio Emilia Italy
Marcelo Pavanello Centro Universitario da FEI Brazil
Yuriy N. Pchelnikov - United States
Stephen Pearton University of Florida United States
Martin Peckerar University of Maryland United States
Jose Carlos Pedro University of Aveiro Portugal
Lian-Mao Peng Peking University China
Ana Pereira Universidade Estadual de Campinas Brazil
A.G. Unil Perera Georgia State University United States
Amador Pérez-Tomás IMB-CNM (CSIC) Spain
Kurt Pernstich Zurich University of Applied Sciences Switzerland
Marco Peroni Selex-SI Italy
Julien Perruisseau-Carrier Ecole Polytechnique Federale de Lausanne Switzerland
Yuriy Pershin University of South Carolina United States
Michael Petelin Institute of Applied Physics, Russian Acadamy of Sciences Russia
Ian Marius Peters National University of Singapore Singapore
John Petillo Science Applications International Corp. United States
Kin-Leong Pey Singapore University of Technology and Design Singapore
Alan Phelps University of Strathclyde United Kingdom
Jamie Phillips University of Michigan United States
Fabian Pianezzi Empa, Swiss Federal Laboratories for Materials Science and Technology Switzerland
Gianluca Piazza Carnegie Mellon University United States
Bernhard Piosczyk Institut fur Hochleistungsimpuls-und Germany
Mats-Erik Pistol Lund University Sweden
Nicolas Planes STMicroelectronics France
Dionyz Pogany Vienna University of Technology Austria
Thierry Poiroux LETI - CEA/GRENOBLE France
Stefano Poli Universita di Bologna Italy
Mirko Poljak University of Zagreb Croatia
Arup Polley Texas Instruments United States
Jef Poortmans IMEC Belgium
Eric Pop University of Illinois at Urbana-Champaign United States
Radivoje Popovic Swiss Federal Institute of Technology Switzerland
Wolfgang Porod University of Notre Dame United States
Marian Pospieszalski National Radio Astronomy Observatory United States
Siddharth Potbhare University of Maryland United States
Siavash Pourkamali University of Denver United States
Gianmauro Pozzovivo Infineon Technologies Austria AG Austria
Kirk Prall Micron Technology Inc. United States
Fabien Prégaldiny University of Strasbourg France
Edward Preisler Jazz Semiconductor United States
Guillaume Prenat SPINTEC (CEA/CNRS) France
Stevan Preradovic Nitero Australia
Ed Priesler TowerJazz United States
Gregory Prigozhin Massachusetts Institute of Technology United States
Boris V Prokofiev Federal State Unitary Enterprise Russia
John Przybysz Northrop Grumman Corporation United States
Raj Pulugurtha Georgia Institute of Technology United States
Kanan Puntambekar Northwestern University United States
Top of page
RĂĽdiger Quay Fraunhofer IAF Germany
Thomas Quemerais STMicroelectronics France
Raymond Quere XLIM-CNRS - University of Limoges France UMR no. 7252 France
Damien Querlioz Universite Paris Sud France
Top of page
Rahul Radhakrishnan Texas Instruments United States
Marko Radosavljevic Intel Corporation United States
Quentin Rafhay MINATEC France
Lars-Ă…ke Ragnarsson IMEC Belgium
Munaf Rahimo ABB Switzerland Ltd Switzerland
Mina Rais-Zadeh University of Michigan United States
Balwinder Raj Jaypee University of Engineering and Technology, Guna India
Siddharth Rajan Ohio State University United States
Anukool Rajoriya Indian Institute of Technology India
R.S. Raju CEERI, Pilani, India India
Shantanu Rajwade Cornell University United States
Shaloo Rakheja Massachusetts Institute of Technology United States
Rathinam Ramesh M.A.M. College of Engineering India
Stephen Ramey Intel Corporation United States
Mindaugas Ramonas Semiconductor Physics Institute Lithuania
Barry Rand IMEC Belgium
V. Ramgopal Rao Indian Institute of Technology India
Hemant Rao Intel Corporation United States
Jean-Pierre Raskin Université catholique de Louvain Belgium
Perumal Ratnam SanDisk Corporation United States
Uwe Rau Forschungszentrum Julich GmbH Germany
Stewart Rauch IBM Microelectronics Division United States
Arijit Raychowdhury Georgia Institute of Technology United States
Pedram Razavi Tyndall National Institute Ireland
Michael Read Calabazas Creek Research Inc United States
David Redinger 3M United States
Susanna Reggiani Universita di Bologna Italy
Lino Reggiani Universita di Lecce Italy
Leonard Register University of Texas at Austin United States
Hans Reisinger Infineon Technologies AG Germany
Junfeng Ren Shandong Normal University China
A. Revelant UniversitĂ  degli Studi di Udine Italy
Patrick Reynaert Katholieke Universiteit Leuven Belgium
Iman Rezanezhad Gatabi Texas A&M University United States
Armin Richter Fraunhofer Institute for Solar Energy Systems Germany
Curt Richter NIST United States
Rafael  Rios Intel Corporation United States
James Roach Peregrine Semiconductor United States
John Robertson Cambridge University United Kingdom
Robert Robison IBM United States
Fabrizio Roccaforte CNR-IMM Italy
Noel Rodriguez Universidad de Granada Spain
Rosana RodrĂ­guez Universitat Autonoma de Barcelona Spain
Yannick Roelens IEMN France
John Rogers University of Illinois at Urbana-Champaign United States
Jaume Roig OnSemiconductor Belgium BVBA Belgium
Kevin Ronald University of Strathclyde United Kingdom
Christophe Rossel IBM Research GmbH Switzerland
Stephen Rossnagel IBM United States
Vladislav Rostov Institute of High Current Electronics Russia
Ananda Roy Intel Corporation United States
Arunanshu Roy Stanford University United States
Cunjun Ruan Institute of Electronics, Chinese Academy of Sciences, Beijing China
P. Paul Ruden University of Minnesota United States
Matthias Rudolph Ferdinand-Braun-Institut für Höchstfrequenztechnik Germany
A.K. Rumaiz Indian Institute of Technology India
Sergey Rumyantsev Rensselaer Polytechnic Institute United States
Christian Russ Infineon Technologies AG Germany
Phil Rutter NXP Semiconductors United Kingdom
Jason Ryan NIST United States
Sei-Hyung Ryu Cree Inc United States
Top of page
Paul Saad Berlin Institute of Technology Germany
Alireza Saberkari University of Guilan Iran
Angada Sachid University of California at Berkeley United States
Martin Sack Karlsruhe Institute of Technology Germany
Toufik Sadi Technische Universitaet Ilmenau Germany
Wataru Saito Toshiba Corporation Japan
Paulius Sakalas Dresden University of Technology Germany
Wataru Sakamoto Toshiba Corporation Japan
Sayeef Salahuddin University of California at Berkeley United States
Lourdes Salamanca-Riba University of Maryland United States
Neda Salamati Ecole Polytechnique Federale de Lausanne Switzerland
Bahaa Saleh CREOL United States
Jean-Michel Sallese Ecole Polytechnique Federale de Lausanne Switzerland
Giovanni Antonio Salvatore Ecole Polytechnique Federale de Lausanne Switzerland
Sanjiv Sambandan Indian Institute of Science India
Ganesh Samudra National University of Singapore Singapore
Enrico Sangiorgi Universita di Bologna Italy
Nobuyuki Sano University of Tsukuba Japan
Krishna Saraswat Stanford University United States
Vinay Saripalli Intel Corporation United States
Chandan Sarkar Jadavpur University India
Subir Sarkar Jadavpur University India
Deblina Sarkar University of California at Santa Barbara United States
Yoshitaka Sasago Hitachi Ltd. Japan
Motonobu Sato AIST Japan
Paul Saunier TriQuint Semiconductor United States
Sneh Saurabh Indian Institute of Technology India
Andrey Savilov Institute for Applied Physics Russia
Donald Sawdai Northrop Grumman Corporation United States
Raghvendra Saxena Solid State Physics Laboratory India
Edl Schamiloglu University of New Mexico United States
Leif Scheick Jet Propulsion Laboratory United States
Susanne Scheinert Ilmenau Technical University Germany
Michael Schenkel Synopsys Switzerland LLC Switzerland
Winston Schoenfeld CREOL United States
Ronald Schrimpf Vanderbilt University United States
Dieter Schroder Arizona State University United States
Michael Schroter TU Dresden Germany
Klaus Schuegraf Applied Materials United States
Joel Schulman HRL Laboratories United States
Joerg Schulze University of Stuttgart Germany
Klaus Schünemann Technische Universität Hamburg-Harburg Germany
Udo Schwalke Technische Universität Darmstadt Germany
David Schwartz Palo Alto Research Center United States
Frank Schwierz Technische Universitaet Ilmenau Germany
Gotthard Seifert TU Dresden Germany
Peter Seitz Ecole Polytechnique Federale de Lausanne Switzerland
Siegfried Selberherr Technical University of Vienna Austria
Luca Selmi UniversitĂ  degli Studi di Udine Italy
Lawrence Selvaraj Institute of Microelectronics Singapore
Vladimir Semyonov Institute of Applied Physics, Russian Acadamy of Sciences Russia
Min-Woong Seo Shizuoka University Japan
Diego Serrano Georgia Institute of Technology United States
Terese Serrano-Gotarredona Spanish Research Council Spain
Peyman Servati University of British Columbia Canada
Sachin Seth Georgia Institute of Technology United States
Karthik Shankar University of Alberta Canada
Mrigank Sharad Purdue University United States
Hasan Sharifi HRL Laboratories United States
Jonathan Shaw Naval Research Laboratory United States
Shih-Chang Shei National University of Tainan Taiwan
Shyh-Chiang Shen Georgia Institute of Technology United States
Wenzhong Shen Shanghai Jiao Tong University China
Kenneth Shepard Columbia University United States
David Sheridan RF Micro Devices United States
Jinn-Kong Sheu National Cheng-Kung University Taiwan
Ayman Shibib Vishay Siliconix Inc United States
Hyunyoung Shim SK Hynix Korea
Sunbo Shim University of California at Los Angeles United States
Mincheol Shin Korea Advanced Inst. Of Science and Technology Korea
Young-Min Shin Northern Illinois University United States
Hyungcheol Shin Seoul National University Korea
Keisuke Shinohara HRL Laboratories United States
Satoshi Shiraki Denso Corporation Japan
Mayank Shrivastava Intel Mobile Communications Germany
Yusuke Shuto Tokyo Institute of Technology Japan
Dieter Silber University of Bremen Germany
Jae-Sung Sim Samsung Electronics Co. Ltd Korea
Grigory Simin University of South Carolina United States
Eddy Simoen IMEC Belgium
Olivier Simonetti Université de Reims Champagne Ardenne France
Navab Singh Institute for Microelectronics Singapore
Pawan Singh Spansion Inc United States
Uttam Singisetti University at Buffalo United States
Henning Sirringhaus University of Cambridge United Kingdom
Gert-Jan Smit NXP Semiconductors Netherlands
Greg Snider Hewlett-Packard Labs United States
Paul Solomon IBM T. J. Watson Research Center United States
Liyang Song IBM United States
Seung-Chul Song Qualcomm Incorporated United States
Li Song University of Electronic Science and Technology of China China
Ken'ichiro Sonoda Renesas Technology Corporation Japan
Bart Sorée IMEC Belgium
Gianpaolo Spadini Intel Corporation United States
Giorgio Spiazzi University of Padova Italy
Purushothaman Srinivasan Texas Instruments United States
Puneet Srivastava IMEC Belgium
Ashok Srivastava Louisiana State University United States
Barbara Stadlober Institute of Nanostructured Materials and Photonics Austria
Armand Staprans CPI International Inc. United States
James Stathis IBM T. J. Watson Research Center United States
Matthias Stecher Infineon Technologies AG Germany
Stefanos Stefanou Helic Inc. Greece
Susanne Stemmer University of California at Santa Barbara United States
Soeren Steudel IMEC Belgium
Eric Stevens True Sense Imaging United States
Kurt Stokbro QuantumWise Denmark
David Stoppa Fondazione Bruno Kessler Italy
John Paul Strachan Hewlett-Packard Labs United States
Andy Strachan National Semiconductor Corporation United States
Andreas Stricker - United States
Michele Stucchi IMEC Belgium
Pin Su National Chiao Tung University Taiwan
Vaidyanathan Subramanian IBM India Private Limited India
John Suehle National Institute of Standards and Technology United States
Nobuyuki Sugii Hitachi Ltd. Japan
Tomislav Suligoj University of Zagreb Croatia
Charles Sullivan Dartmouth College United States
James S. Sullivan Lawrence Livermore National Laboratory United States
Xiao Sun Yale University United States
Siddarth Sundaresan GeneSiC Semiconductor United States
Vyshnavi Suntharalingam MIT United States
Charles Surya The Hong Kong Polytechnic University Hong Kong
Toshi-kazu Suzuki Japan Advanced Institute of Science and Technology Japan
Viktor Sverdlov Technical University of Vienna Austria
Mark Sweet University of Sheffield United Kingdom
Somaia Sylvia University of California at Riverside United States
Tomasz Szczęśniak National Centre for Nuclear Research Poland
Top of page
Roozbeh Tabrizian Georgia Institute of Technology United States
Munehiro Tada NEC Corporation Japan
Srinivas Tadigadapa Penn State University United States
Ya-Hsiang Tai National Chiao Tung University Taiwan
Hiromasa Takahashi Hitachi Europe Ltd. United Kingdom
Yasuo Takahashi Hokkaido University Japan
Kenichi Takatori NLT Technologies Japan
Norikatsu Takaura LEAP Japan
Hiroshi Takeda Renesas Electronics Corporation Japan
Kuniharau Takei University of California at Berkeley United States
Kiyoshi Takeuchi Renesas Electronics Corporation Japan
Takuji Tanaka Fujitsu Semiconductor Limited Japan
Kenichiro Tanaka Panasonic Corporation Japan
Tetsufumi Tanamoto Toshiba Corporation Japan
Aik Yean Tang Chalmers University of Technology Sweden
Yang Tang Institute of Microelectronics, Tsinghua University China
Zhao Tang RF Micro Devices United States
Ting-wei Tang University of Massachusetts United States
Minghua Tang Xiangtan University China
Nelson Tansu Lehigh University United States
Jean Guy Tartarin Universite de Toulouse France
Yoshinori Tatematsu University of Fukui Japan
Yuan Taur University of California at San Diego United States
D. Martin Taylor Bangor University United Kingdom
Joseph Tedesco National Institute of Standards and Technology United States
Naoki Tega Hitachi Ltd. Japan
James Teherani MIT United States
Emmanouil Tentzeris Georgia Institute of Technology United States
Manos Tentzeris Georgia Institute of Technology United States
Kazuo Terada Hiroshima City University Japan
Nobukazu Teranishi Panasonic Corporation Japan
Aaron Thean IMEC Belgium
Albert Theuwissen Harvest Imaging Belgium
Trevor Thornton Arizona State University United States
Luuk Tiemeijer NXP Semiconductors Netherlands
Isabel Tienda-Luna University of Granada Spain
Naveen Tipirneni Vishay Siliconix Inc United States
Yuri Tkachev Silicon Storage Technology, Inc. United States
Ignacio Tobias Universidad Politécnica de Madrid Spain
Eng-Huat Toh GlobalFoundries Singapore Singapore
Maria Toledano-Luque Universidad Complutense de Madrid Spain
Daniel Tomaszewski Institute of Electron Technology Poland
Katsuhiro Tomioka Hokkaido University Japan
Guido Torelli University of Pavia Italy
Akira Toriumi University of Tokyo Japan
Pekka Torma Aalto University Finland
Nagumo Toshiharu Renesas Electronics Corporation Japan
Antoine Touboul University Montpellier 2 France
Gaetan Toulon LAAS-CNRS France
M'hamed Trabelsi Institut Préparatoire aux Etudes d’Ingénieurs de Nabeul Tunisia
Hai Dang Trinh National Chiao Tung University Taiwan
François Triozon CEA LETI-MINATEC France
Amit Trivedi Georgia Institute of Technology United States
Richard True L-3 Communications Electron Devices United States
Jen-Chou Tseng TSMC Taiwan
Andreas Tsormpatzoglou Aristotle University of Thessaloniki Greece
Dimitris Tsoukalas National Technical University of Athens Greece
Hideaki Tsuchiya Kobe University Japan
Shimpei Tsujikawa Sony Corporation Japan
Soichiro Tsujino Paul Scherrer Institut Switzerland
Ahmet Tura Intel Corporation United States
Sreenidhi Turuvekere Indian Institute of Technology Madras India
Lee Tutt Eastman Kodak Co United States
Emanuel Tutuc University of Texas at Austin United States
Top of page
Ken Uchida Keio University Japan
Tetsuzo Ueda Matsushita Electric Industrial Co. Ltd Japan
Keiji Ueno Saitama University Japan
Shigeyasu Uno Ritsumeikan University Japan
Yukiharu Uraoka NAIST Japan
Michael Uren University of Bristol United Kingdom
Hakan Urey Koc University Turkey
Miguel Urteaga Teledyne Scientific Company United States
Top of page
Mani Vaidyanathan University of Alberta Canada
Eva Valero Universidad de Granada Spain
Joost Van Beek NXP Semiconductors Netherlands
Geert Van den bosch IMEC Belgium
Olaf van der Sluis Philips Research Netherlands
Jan Van der Spiegel University of Pennsylvania United States
Friedbert van Raay Fraunhofer IAF Germany
Bart Van Zeghbroeck University of Colorado United States
Lode Vandamme Eindhoven University of Technology Netherlands
Luca Vandelli UniversitĂ  di Modena e Reggio Emilia Italy
William Vandenberghe University of Texas at Dallas United States
Anne Vandooren IMEC Belgium
Giorgio Vannini University of Ferrara Italy
Dhanoop Varghese Texas Instruments United States
Vladislav Vashchenko Maxim Integrated United States
Dragica Vasileska Arizona State University United States
Dmitriy Vavriv Institute of Radio Astronomy Ukraine
Reinaldo Vega IBM United States
Dmitry Veksler Sematech United States
Anne Verhulst IMEC Belgium
Konstantin Vershinin De Montfort University United Kingdom
Giovanni Verzellesi University of Modena and Reggio Emilia Italy
Ramakrishna Vetury RF Micro Devices United States
Mikhail Vexler A. F. Ioffe Physico-Technical Institute Russia
Anthony Villalon CEA-LETI France
Maud Vinet CEA-LETI-Minatec France
Stanislav Vitanov Technical University of Wien Austria
Eric Vogel Georgia Institute of Technology United States
Martti Voutilainen Nokia Research Center Finland
Top of page
John Wager Oregon State University United States
Sigurd Wagner Princeton University United States
P.-J. Wagner Technical University of Wien Austria
Katsunori Wakabayashi National Institute for Materials Science Japan
Akio Wakejima Nagoya Institute of Technology Japan
Anthony Walton University of Edinburgh United Kingdom
Yiman Wang Beijing University of Technology China
Peng-Fei Wang Fudan University China
Hua Wang Georgia Institute of Technology United States
Xin Peng Wang IMEC Belgium
Shi Jie Wang Institute of Materials Research & Engineering Singapore
Ying Wang Institute of Microelectronics China
Yuan Wang Institute of Microelectronics China
Sheng Kai Wang Institute of Microelectronics, Chinese Academy of Sciences China
Yih Wang Intel Corporation United States
Mu-Chun Wang Minghsin University of Science and Technology Taiwan
Han Wang MIT United States
Tahui Wang National Chiao Tung University Taiwan
Zhanliang Wang National Key Laboratory of Science and Technology on Vacuum Electronics China
Zih-Song Wang National Tsing-Hua University Taiwan
Runsheng Wang Peking University China
Mingxiang Wang Soochow University China
Chun-Kai Wang Southern Taiwan University Taiwan
Gang Wang Sun Yat-Sen University China
Lingquan (Dennis) Wang Suvolta Inc United States
C.D. Wang TianJin University China
Ronghua Wang Transphorm Inc. United States
Yan Wang Tsinghua University China
Xingsheng Wang University of Glasgow United Kingdom
Kai Wang University of Waterloo Canada
Rainer Waser Forschungszentrum Julich GmbH Germany
Edward Wasige University of Glasgow United Kingdom
Takashi Watanabe Brookman Technology Japan
Hiroshi Watanabe National Chiao Tung University Taiwan
Pieter Weckx Katholieke Universiteit Leuven Belgium
Roshan Weerasekera Institute of Microelectronics Singapore
Xiaoyun Wei Huazhong University of Science and Technology China
Lan Wei Massachusetts Institute of Technology United States
Xiaoding Wei Northwestern University United States
Yanyu Wei University of Electronic Science and Technology of China China
Charles Weitzel - United States
Lars-Erik Wernersson Lund University Sweden
Jeff West Texas Instruments United States
Andreas Wettstein Synopsys Switzerland LLC Switzerland
David Whaley L-3 Communications Electron Technologies, Inc. United States
Gregory Whiting Palo Alto Research Center United States
Darshana Wickramaratne University of California at Riverside United States
Richard Williams IBM United States
Gilson Wirth Universidade Federal Do Rio Grande Do Sul Brazil
Man Hoi Wong Sematech United States
H.-S. Philip Wong Stanford University United States
Simon Wong Stanford University United States
Man Wong The Hong Kong University of Science and Technology Hong Kong
William Wong University of Waterloo Canada
Gene Worley Qualcomm Incorporated United States
Dirk Wouters IMEC Belgium
Nicola Wrachien University of Padova Italy
San Lein Wu Cheng Shiu University Taiwan
Yanqing Wu IBM United States
Ernest Wu IBM Microelectronics Division United States
Chen-Jun Wu Macronix International Co. Ltd. Taiwan
Jau-Yi Wu Macronix International Co. Ltd. Taiwan
YewChung Sermon Wu National Chiao Tung University Taiwan
Kehuey Wu National Nano Device Laboratories Taiwan
Chao-Hsin Wu National Taiwan University Taiwan
Yuh-Renn Wu National Taiwan University Taiwan
Lij Wu Tsinghua University China
Hao Wu University of California at Los Angeles United States
Zhengzheng Wu University of Michigan United States
Top of page
Kejun Xia Auburn University United States
Fengnian Xia IBM T. J. Watson Research Center United States
Ling Xia Massachusetts Institute of Technology United States
Gang Xie Zhejiang University China
Feng Xiong University of Illinois at Urbana-Champaign United States
Xiangming Xu HuaHong NEC Electronics Company, Ltd. China
Zheng Xu IBM United States
Chuan Xu Maxim Integrated United States
Ningsheng Xu Sun Yat-Sen University China
Nuo Xu University of California at Berkeley United States
Yi Xuan Purdue University United States
Top of page
Eli Yablonovitch University of California at Berkeley United States
Masanao Yamaoka Hitachi Ltd. Japan
Hiroyuki Yamauchi Fukuoka Institute of Technology Japan
Wen Luh Yang Feng Chia University Taiwan
Guang Yang Forza Silicon Corp. United States
Xiaodong (Eric) Yang GlobalFoundries United States
Kyounghoon Yang Korea Advanced Inst. Of Science and Technology Korea
Ji-Woon Yang Korea University Korea
Fu-Liang Yang National Nano Device Laboratories Taiwan
Frank Yang Qualcomm Incorporated United States
Ming-Ta Yang Qualcomm Incorporated United States
F.J. Yang TSMC Taiwan
Hiroshi Yano Nara Institute of Science and Technology Japan
M. Yazdandoost TeledyneDalsa Canada
Peide Ye Purdue University United States
K Yee Chungnam National University Korea
Wen-Kuan Yeh National University of Kaohsiung Taiwan
Yee-Chia Yeo National University of Singapore Singapore
Hamza Yilmaz AOS Semiconductor United States
Oktay Yilmazoglu Technische Universität Darmstadt Germany
You Yin Gunma University Japan
Shang-Ping Ying Minghsin University of Science and Technology Taiwan
Seunghyup Yoo Korea Advanced Inst. Of Science and Technology Korea
Sung Min Yoon Kyung Hee University Korea
Youngki Yoon University of Waterloo Canada
Hongbin Yu Arizona State University United States
Zhiping Yu Tsinghua University China
Min Yu Institute of Microelectronics, Peking University China
Tianhua Yu Lam Research Corporation United States
Bo Yu Qualcomm Incorporated United States
HongYu Yu South University of Science and Technology of China China
Shimeng Yu Stanford University United States
Ran Yu Tyndall National Institute Ireland
Jiahui Yuan Spansion Inc. United States
Yu Yuan University of California at San Diego United States
Jiann-shiun Yuan University of Central Florida United States
Yuanzheng Yue University of Notre Dame United States
Joosun Yun Hanyang University Korea
Top of page
Ferdows Zahid Hong Kong University Hong Kong
Dmitri Zakharov Brookhaven National Laboratory United States
Peter Zampardi Skyworks Solutions Inc. United States
Hsiao-Wen Zan National Chiao Tung University Taiwan
Hui Zang GlobalFoundries United States
Vladimir Zapevalov Institute of Applied Physics, Russian Academy of Sciences Russia
Franco Zappa Politecnico di Milano Italy
Alexander Zaslavsky Brown University United States
Jun Zeng MaxPower Semiconductor Inc United States
Carl-Mikael Zetterling KTH Royal Institute of Technology Sweden
Ning Zhan IBM Semiconductor Research and Development Center United States
Wei Zhang Broadcom Corporation United States
Kun Zhang Clarkson University United States
Jon Zhang Cree Inc United States
Guohe Zhang Institute of Microelectronics China
Shengdong Zhang Institute of Microelectronics China
Lining Zhang Institute of Microelectronics, Peking University China
Wei Zhang Liverpool John Moores University United Kingdom
Qin Zhang National Institute of Standards and Technology United States
Dingyou Zhang Rensselaer Polytechnic Institute United States
Yongxi Zhang Texas Instruments United States
Rui Zhang The University of Tokyo Japan
Can Zhang University of Cambridge United Kingdom
Bo Zhang University of Electronic Science and Technology of China China
Qing-Tai Zhao Forschungszentrum Julich GmbH Germany
Shuyun Zhao Hong Kong University of Science and Technology Hong Kong
Pei Zhao University of Notre Dame United States
Feng Zhao Washington State University United States
Victor Zhirnov Semiconductor Research Corporation United States
Xing  Zhou Nanyang Technological University Singapore
Qi Zhou University of Electronic Science and Technology of China China
Guangle Zhou University of Notre Dame United States
Lin Zhu Clemson University United States
Z. Zhu Freescale Semiconductor United States
Liqiang Zhu Ningbo Institute of Material Technology & Engineering China
Judy Zhu Sarnoff Corporation United States
Yan Zhuang Wright State University United States
Maryam Ziaei-Moayyed Sandia National Laboratories United States
Ute Zschieschang Max Planck Institute for Solid State Research Germany
Paul Zuber IMEC

Belgium