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2013 EDL Golden Reviewers

The ability of the IEEE Electron Devices Letters to publish high quality papers has always been, and will continue to be, critically dependent upon the generosity, expertise, and dedication of the reviewers who volunteer their time for this purpose.  The Editorial Board of EDL wish to gratefully acknowledge the individuals inside and out of the Electron Devices Society who have so selflessly contributed to this effort.


The IEEE Electron Device Letters List of Golden Reviewers for 2013
  
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Name Affiliation Country
George Adamopoulos Lancaster University United Kingdom
Ehsan Afshari Cornell University United States
Aryan Afzalian Université catholique de Louvain Belgium
Sapan Agarwal University of California at Berkeley United States
Sujin Ahn Samsung Electronics Co. Ltd. Korea
Jong-Hyun Ahn Yonsei University Korea
Arman Ahnood University College London United Kingdom
Masamichi Akazawa Hokkaido University Japan
Deji Akinwande University of Texas at Austin United States
Muhammad Alam Purdue University United States
Eduard Alarcon UPC Universitat Politecnica de Catalunya Spain
Olayiwola Alatise Warwick University United Kingdom
Petre Alexandrov United Silicon Carbide, Inc. United States
Ashkar Ali Intel Corp United States
David Allee Arizona State University United States
Martin Allen University of Canterbury New Zealand
Mohammed Alomari University of Ulm Germany
Emre Alptekin IBM United States
Mohamed Alsharef Technische Universität Ilmenau Germany
Johann Alsmeier SanDisk Corp. United States
Juan Alzate University of California at Los Angeles United States
Anis Ammous Ecole Nationale d’Ingénieurs de Sfax Tunisia
Diing Shenp Ang Nanyang Technological University Singapore
Costin Anghel Institut Superieur d'Electronique de Paris France
Dimitri Antoniadis Massachusetts Institute of Technology United States
Jin-Ping Ao University of Tokushima Japan
Hideaki Aochi Toshiba Corporation Japan
Marc Aoulaiche IMEC Belgium
Joerg Appenzeller Purdue University United States
Hiroaki Arimura IMEC Belgium
Narain Arora Siprosys United States
Vijay Arora Wilkes University United States
Subramaniam Arulkumaran Nanyang Technological University Singapore
Kamal Asadi Philips Research Laboratories Netherlands
Asen Asenov University of Glasgow United Kingdom
Tim Ashley University of Warwick United Kingdom
Caglar Ataman Universiy of Freiburg Germany
Karen Attenborough NXP Semiconductors Belgium
Yves Audet Ecole Politechnique de Montreal Canada
Matthias Auf der Maur Università di Roma Tor Vergata Italy
Klaus Aufinger Infineon Technologies Germany
Charles Augustine Intel Corp United States
Brian Aull Massachusetts Institute of Technology United States
Gregory Avenier STMicroelectronics France
Atilla Aydinli Bilkent University Turkey
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Giorgio Baccarani Universita di Bologna Italy
Hagyoul Bae Kookmin University Korea
In-Gyu Baek Samsung Electronics Co. Ltd. Korea
Marise Bafleur LAAS/CNRS France
Maryam Baghini Indian Institute of Technology Bombay India
Eldad Bahat Treidel Ferdinand-Braun-Institut für Höchstfrequenztechnik Germany
Sandeep Bahl Texas Instruments United States
Ritu Bajpai SanDisk Corp. United States
Mietek Bakowski Acreo Sweden
Alexander Balandin University of California at Riverside United States
Sujit Banerjee Power Integrations United States
Kaustav Banerjee University of California at Santa Barbara United States
Emanuele Baravelli Università di Bologna Italy
Massimo Barbaro University of Cagliari Italy
Jennifer Bardwell National Research Council of Canada Canada
Satya Barik BluGlass Ltd Australia
Douglas Barlage University of Alberta Canada
Joaquim Barroso National Institute for Space Research Brazil
Paul Basore Hanwha Solar America United States
Stephen Bayne Texas Tech University United States
Salvatore Bellone University of Salerno Italy
Francis Benistant CharteredSemiconductor Singapore
Steven Bentley GlobalFoundries United States
Paul Berger Ohio State University United States
Gennadi Bersuker International Sematech United States
Emmerich Bertagnolli Technical University of Vienna Austria
Giovanni Betti Beneventi Universita di Bologna Italy
Greg Betzel University of Canterbury New Zealand
Navakanta Bhat Indian Institute of Science India
K.N. Bhat Indian Institute of Science India
Markus Bina Institute for Microelectronics Austria
Arnab Biswas Ecole Polytechnique Fédérale de Lausanne Switzerland
Nicolas Blanc CSEM Switzerland
Frederic Boeuf STMicroelectronics France
Joseph Boisvert Boeing Spectrolab United States
Colombo Bolognesi ETH-Zurich Switzerland
Alex Bolotnikov GE Global Research United States
John Boos Naval Research Laboratory United States
Tim Böscke Bosch Solar Energy Germany
Gianluca Boselli Texas Instruments United States
Karim Boutros HRL Laboratory United States
Keith Bowman Qualcomm Inc. United States
Boyan Boyanov Intel Corp United States
Guy Brammertz IMEC Belgium
Liam Britnell University of Manchester United Kingdom
Jonathan Brodsky Texas Instruments United States
David Brown HRL Laboratories United States
Jürgen Brugger Ecole Polytechnique Fédérale de Lausanne Switzerland
Francesca Brunetti Università di Roma Tor Vergata Italy
Dan Buca Forschungszentrum Julich GmbH Germany
Geoffrey Burr IBM United States
Brian Butcher CNSE/ SMEATECH United States
Rainer Butendeich OSRAM Germany
Dario Buttari Northrop Grumman Corporation United States
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Carlo Cagli CEA Grenoble France
Christian Caillat Micron Technology Belgium
Alessandro Calderoni Micron Italy
Jason Campbell National Institute of Standards and Technology United States
Stephen Campbell University of Minnesota United States
Joe Campbell University of Virginia United States
Eugenio Cantatore Eindhoven University of Technology Netherlands
Bin Cao Huazhong University of Science and Technology China
Xun Cao Shanghai Institute of Ceramics China
Juncheng Cao Shanghai Institute of Microsystem and Information Technology China
Bingqiang Cao University of Jinan China
Yu (Kevin) Cao Arizona State University United States
Qing Cao IBM United States
Yu Cao Kopin Corp United States
Alejandra Castro-Carranza Universitat Rovira i Virgili Spain
Daniela Cavalcoli Universita di Bologna Italy
Zeynep Celik-Butler University of Texas at Arlington United States
Antonio Cerdeira CINVESTAV Mexico
Ho-Young Cha Hongik University Korea
Kelson Chabak Air Force Research Laboratory United States
Paul Chalker University of Liverpool United Kingdom
Mansun Chan Hong Kong University of Science and Technology Hong Kong
Yuchun Chang Jilin University China
Yao-Wen Chang Macronix International Co, Ltd. Taiwan
Shoou-Jinn Chang National Cheng Kung University Taiwan
Chun-Yen Chang National Chiao Tung University Taiwan
Ting-Chang Chang National Sun Yat-Sen University Taiwan
Wen-Yuan Chang National Tsing Hua University Taiwan
Seo Hyoung Chang Argonne National Laboratory United States
Hsueh-Rong Chang International Rectifier United States
Alain Chantre STMicroelectronics France
Yu-Chiang Chao National Chiao Tung University Taiwan
Pane-Chane Chao BAE Systems United States
Yang-Yin Chen IMEC Belgium
Shih-Hung Chen IMEC Belgium
Weiyou Chen Jilin University China
Peng Chen OSRAM Lighting Ltd. China
Kevin Chen Hong Kong University of Science and Technology Hong Kong
Yu-Hung Chen Industrial Technology Research Institute Taiwan
Yusheng Chen Industrial Technology Research Institute Taiwan
Fred Chen Industrial Technology Research Institute Taiwan
Jone Chen National Cheng Kung University Taiwan
Kuan-Neng Chen National Chiao Tung University Taiwan
Ming-Jer Chen National Chiao Tung University Taiwan
Chung-Nan Chen National Kaohsiung University of Applied Sciences Taiwan
Kun-Ming Chen National Nano Device Laboratories Taiwan
Min-Cheng Chen National Nano Device Laboratories Taiwan
Miin-Jang Chen National Taiwan University Taiwan
An Chen GlobalFoundries United States
Eugene Chen Grandis Inc. United States
Fen Chen IBM United States
Yaochung Chen Northrop Grumman Space Technology United States
Hong-Yan Chen Purdue University United States
Wayne Chen University of California at San Diego United States
I-Wei Chen University of Pennsylvania United States
Yiran Chen University of Pittsburgh United States
Yenting Chen University of Texas at Austin United States
Chun-Hu Cheng National Taiwan Normal University Taiwan
Kunigunde Cherenack Philips Research Europe Netherlands
K. C. Chiang National Chiao Tung University Taiwan
Wei-Chih Chien Macronix International Co, Ltd. Taiwan
Chao-Hsin Chien National Chiao Tung University Taiwan
Liang-Chy Chien Kent State University United States
Albert Chin National Chiao Tung University Taiwan
Alessandro Chini Università di Modena e Reggio Emilia Italy
Fu-Chien Chiu Ming Chuan University Taiwan
Hsin-Ying Chiu IBM United States
Moonju Cho IMEC Belgium
Byung-Jin Cho Korea Advanced Institute of Science and Technology Korea
Won-Ju Cho Kwangwoon University Korea
Soohaeng Cho Yonsei University Korea
Hyun-Jin Cho GlobalFoundries United States
Seongjae Cho Stanford University United States
Min Hee Cho University of California at Berkeley United States
Jong Sun Choi Hongik University Korea
Rino Choi Inha University Korea
Yang-Kyu Choi Korea Advanced Institute of Science and Technology Korea
Jun Hee Choi Samsung Advanced Institute of Technology Korea
Sang-Jun Choi Samsung Electronics Co. Ltd. Korea
Jung Han Choi Samsung Electronics Co. Ltd. Korea
Jungdal Choi Samsung Electronics Co. Ltd. Korea
Woo Young Choi Sogang University Korea
LiJen Choi National Semiconductor Corporation United States
Youn Sung Choi Texas Instruments United States
Sung-Jin Choi University of California at Berkeley United States
Murshed Chowdhury IBM United States
Ken Chu BAE Systems United States
Sanford Chu GlobalFoundries United States
Rongming Chu HRL Laboratories United States
Min Chu Texas Instruments United States
Huey-Ru Chuang National Cheng Kung University Taiwan
Kukjin Chun Seoul National University Korea
Yueh-Ting Chung National Chiao Tung University Taiwan
Jinwook Chung Massachusetts Institute of Technology United States
David Clark Raytheon Systems Limited United Kingdom
Abraham Claudio CENIDET Mexico
Raphael Clerc IMEP/ENSERG France
Brian Cobb Holst Centre Netherlands
Robert Coffie TriQuint Semiconductor United States
Guy Cohen IBM United States
Oleg Cojocari ACST GmbH Germany
Lorenzo Colace University Roma Tre Italy
Rick Colbeth Varian Medical Systems United States
Matt Cole University of Cambridge United Kingdom
Jean-Pierre Colinge Taiwan Semiconductor Manufacturing Company Taiwan
Ann Concannon National Semiconductor Corporation United States
John Conley Oregon State University United States
Daniel Connelly Acorn Technologies United States
Brad Conrad Appalachian State University United States
Adam Conway Lawrence Livermore National Laboratory United States
Francesco Conzatti Università degli Studi di Udine Italy
James Cooper Purdue University United States
Yvon Cordier CNRS-CRHEA France
Andrea Corrion HRL Laboratories United States
Ignacio Cortes Instituto de Microelectronica de Barcelona Spain
Ronald Coutu, Jr. Air Force Institute of Technology United States
Antonio Crespo Air Force Research Laboratory United States
Sorin Cristoloveanu IMEP-LAHC-Grenoble INP-MINATEC France
Aurelian Crunteanu XLIM UMR 6172 CNRS France
Felice Crupi Universita della Calabria Italy
Qiang Cui University of Central Florida United States
Lukas Czornomaz IBM Switzerland
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Min Dai IBM United States
Joël Damiens STMicroelectronics France
Michael Dammann Fraunhofer IAF Germany
Nattapol Damrongplasit University of California at Berkeley United States
Pasquale D'angelo IMEM CNR Italy
Martin Daricek Slovak University of Technology in Bratislava Slovakia
Ali Darwish American University in Cairo Egypt
Mohamed Darwish MaxPower Semiconductor Inc United States
Saptarshi Das Purdue University United States
Suman Datta Pennsylvania State University United States
Donald D'Avanzo Agilent Technologies, Inc. United States
John David University of Sheffield United Kingdom
Jimmy Davidson Vanderbilt University United States
Shadi Dayeh University of California at San Diego United States
Luca De Michielis Ecole Polytechnique Fédérale de Lausanne Switzerland
Michelly de Souza Centro Universitario da FEI Brazil
William Deal Northrop Grumman Corporation United States
M. Jamal Deen McMaster University Canada
David Deen University of Minnesota United States
Nicolas Defrance IEMN France
Tadayoshi Deguchi New Japan Radio Japan
Nima Dehdashti Akhavan University of Western Australia Australia
Jesus del Alamo Massachusetts Institute of Technology United States
Sylvain Delage Alcatel-Thales III-V Lab France
Jeffrey DeNatale Teledyne Scientific Company United States
Marie Denison Texas Instruments United States
Dan Denninghoff University of California at Santa Barbara United States
Joff Derluyn EpiGaN Belgium
Gilbert Dewey Intel Corp United States
Aldo Di Carlo Università di Roma Tor Vergata Italy
Michael Dickey North Carolina State University United States
Sima Dimitrijev Giffith University Australia
Guanghai Ding Analog Devices, Inc. United States
Boualem Djezzar Centre de Développement des Tachnologies Avancées Algeria
Nick Donaldson University College London United Kingdom
Shurong Dong Zhejiang University China
Gerben Doornbos TSMC Europe BV Belgium
Carlos dos Reis Filho State University of Campinas Brazil
Brian Downey US Naval Reseach Lab United States
Thomas Driscoll University of California at San Diego United States
Alexander Driskill-Smith Grandis Inc. United States
Francesco Driussi Università degli Studi di Udine Italy
Dominique Drouin Université de Sherbrooke Canada
Pei-Ying Du Macronix International Co, Ltd. Taiwan
Xu Du Stony Brook University United States
Christian Dua Alcatel-Thales III-V Lab France
Baoxing Duan Xidian University China
Xiangfeng Duan University of California at Los Angeles United States
Emmanuel Dubois IEMN France
Martin Dvorak Agilent Technologies, Inc. United States
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Heribert Eisele University of Leeds United Kingdom
Amro Elshurafa King Abdullah University of Science and Technology Saudi Arabia
Kazuhiko Endo National Institute of Advanced Industrial Science and Technology Japan
Akira Endoh National Institute of Information and Communications Technology Japan
Roman Engel-Herbert Pennsylvania State University United States
Mohammad Esmaeili-Rad University of Waterloo Canada
David Esseni Università degli Studi di Udine Italy
Pedro Estrela University of Bath United Kingdom
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Ching-Lin Fan National Taiwan University of Science and Technology Taiwan
Zheng Fang Nanyang Technological University Singapore
Andrea Fantini IMEC Belgium
Paolo Fantini Micron Italy
Marc Faucher IEMN France
Patrick Fay University of Notre Dame United States
Pierre Fazan Micron Technology Belgium
Randall Feenstra Carnegie Mellon University United States
Michael Feǐginov Technische Universität Darmstadt Germany
Jonathan Felbinger Booz Allen Hamilton United States
Susan Felch Ion Beam Services United States
Baruch Feldman Weizmann Institute of Science Israel
Frank Feldmann Fraunhofer ISE Germany
Jia Feng Oracle United States
David Ferry Arizona State University United States
Gianluca Fiori University of Pisa Italy
Massimo Fischetti University of Texas at Dallas United States
Denis Flandre Université catholique de Louvain Belgium
Dan Fleetwood Vanderbilt University United States
Arno Foerster Aachen University of Applied Sciences Germany
Arash Fomani University of Waterloo Canada
Clifton Fonstad Massachusetts Institute of Technology United States
Guglielmo Fortunato CNR Italy
Eric Fossum Dartmouth College United States
Jerry Fossum University of Florida United States
Glen Fox United States
Laurent Francis Université catholique de Louvain Belgium
Evan Franklin Australian National University Australia
Aaron Franklin IBM United States
Marcus Freitag IBM United States
Hélène Fremont University of Bordeaux France
Peter Friedrichs Infineon Technologies Germany
Michael Fritze USC Information Sciences Institute United States
Lan Fu Australian National University Australia
Yongqing Fu University of the West of Scotland United Kingdom
Tatsuya Fujishima Massachusetts Institute of Technology United States
Hiroki Fujishiro Tokyo University of Science Japan
Kenji Fukuda National Institute of Advanced Industrial Science and Technology Japan
Koichi Fukuda National Institute of Advanced Industrial Science and Technology Japan
Koichi Fukuda Toshiba Corporation Japan
Kenjiro Fukuda Yamagata University Japan
Takafumi Fukushima Tohoku University Japan
Yoshiaki Fukuzumi Toshiba Corporation Japan
Andy Fung Jet Propulsion Lab. United States
Mamoru Furuta Kochi University of Technology Japan
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Mark Gajda NXP Semiconductors United Kingdom
Jeff Gambino IBM United States
Francisco Gamiz Universidad de Granada Spain
Zhenghao Gan Semiconductor Manufacturing International Corporation China
Udayan Ganguly Indian Institute of Technology Bombay India
Satyaki Ganguly University of Notre Dame United States
Bin Gao Peking University China
Xavier Garros CEA Grenoble France
Pantelis Georgiou Center of Bio-inspired Technology United Kingdom
Tahir Ghani Intel Corp United States
Andrea Ghetti Micron Semiconductor Italia Italy
Gérard Ghibaudo IMEP-LAHC France
Avik Ghosh University of Virginia United States
Martin Giles Intel Corp United States
James Gillespie Air Force Research Laboratory United States
David Gilmer Sematech United States
Gino Giusi University of Messina Italy
Bruce Gnade University of Texas at Dallas United States
Elena Gnani Universita di Bologna Italy
Antonio Gnudi Universita di Bologna Italy
David Go University of Notre Dame United States
Akira Goda Micron Technology United States
Lynford Goddard University of Illinois at Urbana-Champaign United States
Isabelle Goffioul-Ferain GlobalFoundries United States
Mutlu Gökkavas Bilkent University Turkey
Henrique Gomes University of the Algarve Portugal
Jeng Gong National Tsing Hua University Taiwan
Chakravarthy Gopalan Adesto Technologies United States
Harald Gossner Intel Corp Germany
Masahide Goto NHK Science and Technology Research Laboratories Japan
Bogdan Govoreanu IMEC Belgium
Jan Grahn Chalmers University of Technology Sweden
Nicholas Grant Australian National University Australia
Tibor Grasser Technical University of Vienna Austria
David Gray Virginia Tech United States
Bruce Green Freescale Semiconductor Inc. United States
Guido Groeseneken IMEC- KU Leuven Belgium
Daniel Grogg IBM Switzerland
Marius Grundmann Universitaet Leipzig Germany
Jiangjiang Gu Intel Corp United States
Ximeng Guan IBM United States
Weihua Guan Yale University United States
Fernando Guarin IBM United States
Sarath Gunapala Jet Propulsion Lab. United States
Jyh-Chyurn Guo National Chiao Tung University Taiwan
Dechao Guo IBM United States
Jia Guo ON Semiconductor United States
Sumeet Gupta Purdue University United States
Augusto Gutierrez-Aitken Northrop Grumman Corporation United States
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Sameer Haddad Spansion United States
Wilfried Haensch IBM United States
Soufien Haffouz National Research Council of Canada Canada
Jean-Jacques Hajjar Analog Devices, Inc. United States
Steve Hall University of Liverpool United Kingdom
Behrang Hamadani National Institute of Standards and Technology United States
Min-Koo Han Seoul National University Korea
Shu-Jen Han IBM United States
Jin-Woo Han NASA Ames Research Center United States
Jung Han Yale University United States
Samiul Haque Nokia Research Centre United Kingdom
Akito Hara Tohoku Gakuin University Japan
H. Rusty Harris Texas A&M University United States
Pouya Hashemi IBM United States
Tamotsu Hashizume Hokkaido University Japan
Nikolaos Hastas Aristotle University of Thessaloniki Greece
Ryu Hasunuma University of Tsukuba Japan
Reiji Hattori Kyushu University Japan
Hongyu He PKU-HKUST Shenzhen-HongKong Institution China
Jr Hau He National Taiwan University Taiwan
Dawei Heh Taiwan Semiconductor Manufacturing Company Taiwan
Bernd Heinemann IHP GmbH Germany
Bahman Hekmatshoar IBM United States
Patrick Helfenstein Paul Scherrer Institut Switzerland
Per-Erik Hellstrom KTH Royal Institute of Technology Sweden
Christoph Henkel KTH Royal Institute of Technology Sweden
Haldane Henry RF Micro Devices United States
Gregory Herman Oregon State University United States
Manuel Herrera-Zaldívar Universidad Nacional Autónoma de México Mexico
Masataka Higashiwaki National Institute of Information and Communications Technology Japan
Oliver Hilt FBH Berlin Germany
Christopher Hinkle University of Texas at Dallas United States
Kazuyuki Hirama NTT Basic Research Laboratories Japan
Kazumasa Hiramatsu Mie University Japan
Toshiro Hiramoto University of Tokyo Japan
Izumi Hirano Toshiba Corporation Japan
Masanobu Hiroki NTT Photonics laboratories Japan
Digh Hisamoto Hitachi Ltd. Japan
Derek Ho University of Toronto Canada
ChiaHua Ho National Nano device Laboratories Taiwan
Bram Hoex Solar Energy Research Institute of Singapore Singapore
Matthew Hollander Pennsylvania State University United States
James Hone Columbia University United States
Yongtaek Hong Seoul National University Korea
Hiroaki Honjo NEC Corporation Japan
Kazushige Horio Shibaura Institute of Technology Japan
Tuo-Hung Hou National Chiao Tung University Taiwan
Kun Hou SanDisk Corp. United States
Harold Hovel IBM United States
Robert Howell Northrop Grumman Electronic Systems United States
Phil Hower Texas Instruments United States
Judy Hoyt Massachusetts Institute of Technology United States
Ken Hsieh Macronix International Co, Ltd. Taiwan
Gen-Wen Hsieh University of Cambridge United Kingdom
Tzu-Hsuan (Bruce) Hsu Macronix International Co, Ltd. Taiwan
Wei-Chou Hsu National Cheng Kung University Taiwan
Shawn Hsu National Tsing Hua University Taiwan
Ning Hu Chiba University Japan
Zhirun Hu University of Manchester United Kingdom
Qing Hu Massachusetts Institute of Technology United States
Chenming Hu University of California at Berkeley United States
JianJang Huang National Taiwan University Taiwan
Chih-Fang Huang National Tsing Hua University Taiwan
Zhihong Huang Intel Corp United States
Seth Hubbard Rochester Institute of Technology United States
Raymond Hueting University of Twente Netherlands
Paul Hurley Tyndall National Institute Ireland
Paul Hurwitz Jazz Semiconductor United States
Louis Hutin University of California at Berkeley United States
Hyunsang Hwang Pohang University of Science and Technology Korea
Cheol Seong Hwang Seoul National University Korea
Chih-Hong Hwang Taiwan Semiconductor Manufacturing Company Taiwan
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Giuseppe Iannaccone University of Pisa Italy
Nadir Idir Université des Sciences et Technologies de Lille France
Daniele Ielmini Politecnico di Milano Italy
Keiji Ikeda Toshiba Corporation Japan
Kiju Im Samsung Mobile Display Korea
Seongil Im Yonsei University Korea
Tadahiro Imada Fujitsu Laboratories Japan
Satoshi Inaba Toshiba Corporation Japan
Benjamin Iñiguez Universitat Rovira i Virgili Spain
Dimitris Ioannou George Mason University United States
Adrian Mihai Ionescu Ecole Polytechnique Fédérale de Lausanne Switzerland
Toshifumi Irisawa MIRAI-ASET Japan
Hidetoshi Ishida Matsushita Electric Industrial Co. Ltd Japan
Takashi Ishigaki Hitachi Ltd. Japan
Ryoichi Ishihara Delft University of Technology Netherlands
Yasuaki Ishikawa Nara Institute of Science and Technology Japan
Ahmad Islam Wright-Patterson Air Force Base United States
Kenchi Ito Hitachi Ltd. Japan
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Warren Jackson Hewlett-Packard Laboratories United States
Alfonso Torres Jacome INAOE Mexico
Faquir Jain University of Connecticut United States
Jiri Jakovenko Czech Technical University Czech Republic
Meir Janai Saifun Semiconductors Israel
Jin Jang Kyung Hee University Korea
Debdeep Jena University of Notre Dame United States
Erik Jeng Chung Yuan Christian University Taiwan
Jae Kyeong Jeong Inha University Korea
Doo Seok Jeong Korea Institute of Science and Technology Korea
Yoon-Ha Jeong Pohang University of Science and Technology Korea
Hoon Jeong Samsung Electronics Co. Ltd. Korea
Rashmi Jha University of Toledo United States
Zhang Jia NanoTerra United States
Xiaocheng Jiang Harvard University United States
Bin Jie - United States
Jose Jimenez TriQuint Semiconductor United States
David Jiménez Universitat Autònoma de Barcelona Spain
Donghyun Jin Massachusetts Institute of Technology United States
Jungwoo Joh Texas Instruments United States
Jeffrey Johnson IBM United States
Ken Jones Army Research Laboratory United States
Kazukiyo Joshin Fujitsu Laboratories Japan
Colin Joye Naval Research Laboratory United States
Wei Jun Singapore Institute of Manufacturing Technology Singapore
Won-Young Jung Dongbu Semiconductor Korea
Jung-Kyu Jung Samsung Electronics Co. Ltd. Korea
Seong-Ook Jung Yonsei University Korea
Oana Jurchescu Wake Forest University United States
Malgorzata Jurczak IMEC Belgium
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Tetsu Kachi Toyota Central R&D Labs., Inc. Japan
Valentin Kachorovskii Ioffe Physico-Technical Institute Russia
Kuniyuki Kakushima Tokyo Institute of Technology Japan
Buket Kaleli University of Twente Netherlands
Karol Kalna Swansea University United Kingdom
Yoshinari Kamakura Osaka University Japan
Deepak Kamalanathan Adesto Technologies United States
Theodore Kamins Stanford University United States
Toshio Kamiya Tokyo Institute of Technology Japan
Edwin Kan Cornell University United States
Jinfeng Kang Peking University China
In Man Kang Kyungpook National University Korea
Daehwan Kang Samsung Electronics Co. Ltd. Korea
Yimin Kang Intel Corp United States
Seung Kang Qualcomm Inc. United States
Hsuan-Ling Kao Chang Gung University Taiwan
Gouri Kar IMEC Belgium
Ioannis Karafyllidis Democritus University of Thrace Greece
Vassili Karanassios University of Waterloo Canada
Karim Karim University of Waterloo Canada
Eric Karl Intel TMG United States
Ilya Karpov Intel Corp United States
Seiya Kasai Hokkaido University Japan
Erich Kasper University of Stuttgart Germany
Thomas Kauerauf IMEC Belgium
Yusuke Kawaguchi Toshiba Corporation Japan
Takamasa Kawanago Tokyo Institute of Technology Japan
Hiroshi Kawarada Waseda University Japan
Thomas Kazior Raytheon RF Components United States
Ming-Dou Ker National Chiao Tung University Taiwan
Ali Khakifirooz IBM United States
Sameh Khalil HRL Laboratories United States
Pedram Khalili Amiri University of California at Los Angeles United States
Toshihide Kikkawa Fujitsu Laboratories Japan
Valeriya Kilchytska Catholic University of Louvain Belgium
Sunjung Kim IMEC Belgium
Woo Soo Kim Simon Fraser University Canada
Jae Hyun Kim Daegu Gyeongbuk Institute of Science & Technology Korea
Hyoun Kim Hanyang University Korea
Dong Myong Kim Kookmin University Korea
Dae Hwan Kim Kookmin University Korea
Tae-Wook Kim Korea Institute of Science and Technology Korea
Tae Geun Kim Korea University Korea
Ohyun Kim Pohang University of Science and Technology Korea
Chang Jung Kim Samsung Advanced Institute of Technology Korea
Sun-Jung Kim Samsung Electronics Co. Ltd. Korea
Deok-kee Kim Sejong University Korea
Hyun Jae Kim Yonsei University Korea
Keunwoo Kim IBM United States
Jeehwan Kim IBM United States
Taehoon Kim Micron Technology United States
Yong-Bin Kim Northeastern University United States
Dae-Hyun Kim Sematech United States
Sung Hwan Kim University of California at Berkeley United States
Jiyoung Kim University of Texas at Dallas United States
Tsunenobu Kimoto Kyoto University Japan
Mutsumi Kimura Ryukoku University Japan
Ya-Chin King National Tsing Hua University Taiwan
Wiley Kirk University of Texas at Dallas United States
Koji Kita University of Tokyo Japan
Masatoshi Kitamura Kobe University Japan
Hagen Klauk Max Planck Institute for Solid State Research Germany
Gerhard Klimeck Purdue University United States
Johan Klootwijk Philips Research Europe Netherlands
Wojciech Knap Université Montpellier 2 and CNRS France
Irena Knezevic University of Wisconsin - Madison United States
Maris Knite Riga Technical University Latvia
Joachim Knoch RWTH Aachen University Germany
Sang-Hee Ko Park Electronics & Telecommunications Research Institute Korea
Erhard Kohn University of Ulm Germany
George Konstantinidis Foundation for Research and Technology-Hellas Greece
Peter Kordos Slovak Academy of Sciences Slovakia
Marcel Kossel IBM Switzerland
Ryoji Kosugi National Institute of Advanced Industrial Science and Technology Japan
Chandrasekara Kothandaraman IBM United States
John Kouvetakis Arizona State University United States
Sergei Koveshnikov Sematech United States
Abhinav Kranti Indian Institute of Technology Indore India
Ramsey Kraya Johns Hopkins University United States
Viktor Krozer Goethe University of Frankfurt am Main Germany
Pei-Cheng Ku University of Michigan United States
Martin Kuball University of Bristol United Kingdom
Tillmann Kubis Purdue University United States
Sarvesh Kulkarni Intel Corp United States
M. Jagadesh Kumar Indian Institute of Technology India
Hideya Kumomi Tokyo Institute of Technology Japan
Jan Kuzmik Slovak Academy of Sciences Slovakia
Masaaki Kuzuhara University of Fukui Japan
Hyuck-In Kwon Chung-Ang University Korea
Jang-Yeon Kwon Yonsei University Korea
O. Sung Kwon GlobalFoundries United States
Wookhyun Kwon University of California at Berkeley United States
Dim-Lee Kwong Institute of Microelectronics Singapore
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Peter Lai University of Hong Kong Hong Kong
Jackson Lai Carestream Health United States
Roger Lake University of California at Riverside United States
Chung Lam IBM United States
Robert Langer Soitec France
Luca Larcher Università di Modena e Reggio Emilia Italy
Guilhem Larrieu LAAS-CNRS France
Livio Lattanzio Ecole Polytechnique Fédérale de Lausanne Switzerland
David Leadley University of Warwick United Kingdom
Yusuf Leblebici Ecole Polytechnique Fédérale de Lausanne Switzerland
Yu-Heng Jaret Lee Australian National University Australia
Joshua Lee City University of Hong Kong Hong Kong
Kangwook Lee Tohoku University Japan
Hi-Deok Lee Chungnam National University Korea
Byoung Hun Lee Gwangju Instititue of Science and Technology Korea
Seho Lee Hynix Korea
Jung-Hee Lee Kyungpook National University Korea
Jeong-Soo Lee Pohang University of Science and Technology Korea
Jang-Sik Lee Pohang University of Science and Technology Korea
Bang-Lin Lee Samsung Advanced Institute of Technology Korea
Hyun Ju Lee Samsung Electronics Co. Ltd. Korea
Sangjin Lee Samsung Electronics Co. Ltd. Korea
Se Hoon Lee Samsung Electronics Co. Ltd. Korea
Jae-Duk Lee Samsung Electronics Co. Ltd. Korea
Jung hyuk Lee Samsung Electronics Co. Ltd. Korea
Jae-Hoon Lee Samsung Electronics Co. Ltd. Korea
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Nan Lu SanDisk Corp. United States
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Yifeng Wu Cree Inc. United States
Yanqing Wu IBM United States
Ernest Wu IBM United States
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Kejun Xia Auburn University United States
Fengnian Xia IBM United States
Ling Xia Massachusetts Institute of Technology United States
Yong Xia Rensselaer Polytechnic Institute United States
Qian Xie Institute of Microelectronics China
Gang Xie Zhejiang University China
Ruilong Xie GlobalFoundries United States
Yong Zhong Xiong Institute of Microelectronics Singapore
Qihua Xiong Nanyang Technological University Singapore
Feng Xiong University of Illinois at Urbana-Champaign United States
Jun Xu Nanjing University China
Nuo Xu University of California at Berkeley United States
Yong Xu Wayne State University United States
JunShuai Xue Xidian University China
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Naoki Yamamoto Tokyo Institute of Technology Japan
Jingfeng Yang Canada
Wen Luh Yang Feng Chia University Taiwan
Chien-Hsin Yang National University of Kaohsiung Taiwan
Xiaodong (Eric) Yang GlobalFoundries United States
Jianhua Yang Hewlett-Packard Laboratories United States
Yuchao Yang University of Michigan United States
Hiroshi Yano Nara Institute of Science and Technology Japan
Ryutaro Yasuhara Panasonic Corporation Japan
Jiandong Ye Australian National University Australia
Peide Ye Purdue University United States
Wen-Kuan Yeh National University of Kaohsiung Taiwan
Ping-Hung Yeh Tamkang University Taiwan
Arthur Yelon Ecole Politechnique de Montreal Canada
Yee-Chia Yeo National University of Singapore Singapore
Sung Min Yoon Kyung Hee University Korea
Tae-Sik Yoon Myongji University Korea
Jingbi You University of California at Los Angeles United States
Ho Kwang Yow Universiti Tunku Abdul Rahman Malaysia
Zhiping Yu Institute of Microelectronics China
HongYu Yu South University of Science and Technology of China China
Ting Yu Nanyang Technological University Singapore
Hao Yu Nanyang Technological University Singapore
Hsin-Chieh Yu National Cheng Kung University Taiwan
Hongbin Yu Arizona State University United States
Shimeng Yu Stanford University United States
Bin Yu State University of New York-Albany United States
Edward Yu University of Texas at Austin United States
Ze Yuan Tsinghua University China
Jiahui Yuan Spansion United States
Yu Yuan University of California at San Diego United States
Yuanzheng Yue University of Notre Dame United States
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Mona Zaghloul George Washington University United States
Cristian Zambelli University of Ferrara Italy
Jaime Alberto Zamudio Flores Kassel University Germany
Hsiao-Wen Zan National Chiao Tung University Taiwan
Hui Zang GlobalFoundries United States
Alexander Zaslavsky Brown University United States
Fei Zeng Tsinghua University China
Jun Zeng MaxPower Semiconductor Inc United States
Carl-Mikael Zetterling KTH Royal Institute of Technology Sweden
Ning Zhan IBM United States
Rui Zhang University of Tokyo Japan
Gang Zhang Samsung Electronics Co. Ltd. Korea
Jian Zhang Liverpool John Moores University United Kingdom
Qingchun Zhang Cree Inc. United States
Dingyou Zhang Rensselaer Polytechnic Institute United States
Xi-Cheng Zhang Rensselaer Polytechnic Institute United States
Yongxi Zhang Texas Instruments United States
Qing-Tai Zhao Forschungszentrum Julich GmbH Germany
Yang Zhao University of California at Berkeley United States
Wei Zhou University of Central Florida United States
Chunxiang Zhu National University of Singapore Singapore
Wenjuan Zhu IBM United States
Babak Ziaie Purdue University United States
Stefan Zollner New Mexico State University United States
Xiao Zou Jianghan University China
Nian-Kai Zous Macronix International Co, Ltd. Taiwan
Jiangkai Zuo Freescale Semiconductor Inc. United States

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