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Gwan-Hyeob Koh

Memory Devices and Technology

koh

Samsung Electronics Company Ltd
Memory TD
Semiconductor R&D Center
San#16 Banwol-Dong
Gyeonggi-Do
Hwasung City 445-701
Korea

Phone: 82-31-325-9534
E-mail:

kghyeob@samsung.com

 

Gwan-Hyeob Koh is a principal engineer working on memory development at Semiconductor R&D Center, Samsung Electronics.  He received B.S., M.S., and Ph.D. degrees in physics from Seoul National University, Seoul, Korea, in 1989, 1991 and 1996 respectively. In 1997, he joined Samsung Electronics and was involved in the development of 1Gb and 4Gb DRAM. From 2002, he has been worked on the development of next generation new memories including MRAM and PRAM. He was involved in the PRAM development from R&D to mass production stage, where his major work was related to process integration, memory device reliability, and yield enhancement.  In 2007, he was visiting scholar at EE dept. of Stanford University.  His current activity at Samsung Electronics is focused on the development of STT-MRAM. From 2009, he has been serving as a subcommittee member of the international conference on Solid State Devices and Materials (SSDM).