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Uygar E. Avci

Memory Devices and Technology

avci

Intel Corp
Componets Research
2501 NW 229th Ave
MS RA3-252
Hillsboro OR 97124
USA
Phone: +1 607 280 4016

         E-mail: uygar.e.avci@intel.com

Uygar E. Avci received double-major BS degrees in Physics and Electrical Engineering from Bogazici University, Istanbul, Turkey in 1999 and was the recipient of the President’s Award. He received his MS and PhD degrees in Applied Physics from Cornell University, Ithaca, NY in 2003 and 2005, respectively. During his doctorate study, he demonstrated the first experimental realization of back-side flash memory.

He joined Intel’s Components Research in 2005, leading Floating Body Cell (FBC) memory experimental device design and scaling that demonstrated industry-leading FBC memory cells. Since 2010, he has focused on the opportunities that beyond-CMOS devices offer to either replace or augment CMOS. He has defined Tunnel-FET device and material options, its scaling roadmap and the road blocks by bridging Physics-based models with experimental material realities. His research includes circuit evaluation of novel devices comprehending the parasitics, interconnect and density to explore their potential for future products. He is currently a Principle Engineer, leading the research for charge-based beyond-CMOS devices and circuits in Intel’s Components Research department.

Dr. Avci served as the Fundamentals Class Chair and the Short Course Chair for the International SOI Conference, in 2012 and 2013, respectively. He has ten filed patents and published twenty-nine papers in international conferences and journals.