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2014 EDL Golden Reviewers

The ability of the IEEE Electron Devices Letters to publish high quality papers has always been, and will continue to be, critically dependent upon the generosity, expertise, and dedication of the reviewers who volunteer their time for this purpose. The Editorial Board of EDL wish to gratefully acknowledge the individuals inside and out of the Electron Devices Society who have so selflessly contributed to this effort.

 
The IEEE Electron Device Letters List of Golden Reviewers for 2014
  
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Name Affiliation Country
Urs Aeberhard Forschungszentrum Jülich Germany
Valery Afanas'ev University of Leuven Belgium
Aryan Afzalian Université catholique de Louvain Belgium
Arash Ahmadivand Islamic Azad University, Ahar Branch Iran
Khaled Ahmed Intermolecular, Inc. United States
Shaikh Ahmed Southern Illinois University at Carbondale United States
Sujin Ahn Samsung Electronics Co. Ltd Korea
Jong-Hyun Ahn Yonsei University Korea
Arman Ahnood University College London United Kingdom
Arvind Ajoy University of Notre Dame United States
Deji Akinwande University of Texas at Austin United States
Mahmoud Al Ahmad United Arab Emirates University United Arab Emirates
Ghusoon Ali Al-Mustansiriyah University Iraq
Ashkar Ali Intel Corporation United States
David Allee Arizona State University United States
Mohammed Alomari University of Ulm Germany
Cem  Alper Ecole Polytechnique Federale de Lausanne Switzerland
Mohamed Alsharef Technische Universität Ilmenau Germany
Juan Alzate University of California at Los Angeles United States
Michele Amato Universite Paris Sud France
Stefano Ambrogio Politecnico di Milano Italy
Mina Amirmazlaghani K.N.Toosi university of Technology Iran
Travis Anderson Naval Research Laboratory United States
Henrik Andersson Mid Sweden University Sweden
Takashi Ando IBM Corporation United States
Csaba Andras-Moritz University of Massachusetts, Amherst United States
Sean Andrews Stanford University United States
Francois Andrieu CEA-LETI France
Paul Andry IBM T.J. Watson Research Center United States
Diing Shenp Ang Nanyang Technological University Singapore
Costin Anghel Institut Superieur d'Electronique de Paris France
Azadeh Ansari University of Michigan United States
Dimitri Antoniadis Massachusetts Institute of Technology United States
Marina Antoniou University of Cambridge United Kingdom
Marc Aoulaiche IMEC Belgium
Joerg Appenzeller Purdue University United States
Aaron Arehart Ohio State University United States
Narain Arora Siprosys Inc United States
Antonio Arreghini IMEC Belgium
Subramaniam Arulkumaran Nanyang Technological University Singapore
Alon Ascoli Technical University Dresden Germany
Asen Asenov University of Glasgow United Kingdom
Tim Ashley University of Warwick United Kingdom
Massood Atashbar Western Michigan University United States
Yves Audet Ecole Polytechnique de Montreal Canada
Matthias Auf der Maur University of Rome 'Tor Vergata' Italy
Klaus Aufinger Infineon Technologies AG Germany
Charles Augustine Intel Corporation United States
Brian Aull Massachusetts Institute of Technology United States
Uygar Avci Intel Corporation United States
Sakir Aydogan Ataturk University Turkey
Stephane Azzopardi University of Bordeaux France
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Giorgio Baccarani Universita di Bologna Italy
Byung Seong Bae Hoseo University Korea
Si-Young Bae Gwangju Institute of Science and Technology Korea
In-Gyu Baek Samsung Electronics Co. Korea
Rock-Hyun Baek Sematech United States
Eldad Bahat Treidel Ferdinand-Braun-Institut für Höchstfrequenztechnik Germany
Seung Jae Baik Hankyong National University Korea
Aurelie Bajolet STMicroelectronics France
Benoit Bakeroot University of Ghent Belgium
Muhannad Bakir Georgia Institute of Technology United States
Murali Balakrishnan Micron Technology, Inc. United States
Simone Balatti Politecnico di Milano Italy
Sujit Banerjee Monolith Semiconductor United States
Koushik Banerjee Intel Corporation United States
Kal Banger University of Cambridge United Kingdom
Marie Garcia Bardon IMEC Belgium
Jennifer Bardwell National Research Council of Canada Canada
Andrew Barnes European Space Agency Netherlands
Joaquim Barroso National Institute for Space Research Brazil
Ajit Barve University of California Santa at Barbara United States
Anton Bauer Fraunhofer Institute for Integrated Systems and Device Technology Germany
Friedhelm Bauer ABB Switzerland Ltd Switzerland
Bernhard Bayer University of Cambridge United Kingdom
Antonios Bazigos Ecole Polytechnique Fédérale de Lausanne Switzerland
Behtash  Behin-Aein GlobalFoundries United States
Philippe Benech IMEP-LAHC France
Francis Benistant GlobalFoundries Singapore
Steven Bentley GlobalFoundries United States
Joshua Bergman Teledyne Scientific and Imaging United States
Cédric Bermond IMEP-LAHC, UMR CNRS 5130 France
Gennadi Bersuker International Sematech United States
Marc Bescond IM2NP France
Giovanni Betti Beneventi University of Bologna Italy
Roberto Bez Micron Technology Italy
K.N. Bhat Indian Institute of Science India
Krishna Bhuwalka Samsung Electronics Korea
Dieter Bimberg Technische Universitaet Berlin Germany
Monica Blank Communications and Power Industries United States
Joseph Boisvert Boeing Spectrolab United States
Colombo Bolognesi ETH Zürich Switzerland
Fabrizio Bonani Politecnico di Torino Italy
John Boos Naval Research Laboratory United States
Vicente Boria Technical University of Valencia Spain
Gianluca Boselli Texas Instruments Inc. United States
Gijs Bosman University of Florida United States
Karim Boutros HRL Laboratory United States
Nicolas Breil IBM Microelectronics Division United States
Stephen Bremner University of New South Wales Australia
Stefano Brivio IMM - CNR Italy
Jonathan Brodsky Texas Instruments Inc. United States
Gary Bronner Rambus Inc United States
Thomas Brown Università degli Studi di Roma "Tor Vergata" Italy
Andrew Brown University of Southampton United Kingdom
David Brown HRL Laboratories United States
Dan Buca Forschungszentrum Julich GmbH Germany
Octavian Buiu Honeywell Romania SRL Romania
Shawn Burnham HRL Laboratories United States
Geoffrey Burr IBM Almaden Research Center United States
Cyril Buttay Laboratoire Ampère France
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Jian Cai Tsinghua University China
Jiafa Cai Xiamen University China
Christian Caillat Micron Technology Belgium
Vittorio Camarchia Politecnico di Torino Italy
Renata Camillo-Castillo IBM Corporation United States
Jason Campbell National Institute of Standards and Technology United States
Stephen Campbell University of Minnesota United States
Kurtis Cantley Boise State University United States
Yu Cao Kopin Corp United States
Domenico Caputo University of Rome "La Sapienza" Italy
Roberto  Caputo University of Calabria Italy
Alejandra Castro-Carranza Universitat Rovira i Virgili Spain
Didier Celi STMicroelectronics France
Antonio Cerdeira CINVESTAV Mexico
Ho-Young Cha Hongik University Korea
Kelson Chabak Air Force Research Laboratory United States
Yang Chai Stanford University United States
Mansun Chan Hong Kong University of Science and Technology Hong Kong
Kwok Sum Chan City University of Hong Kong Hong Kong
Isaac Chan Industrial Technology Research Institute Taiwan
Hengky Chandrahalim University of Michigan United States
Karthik Chandrasekaran GlobalFoundries United States
Shoou-Jinn Chang National Cheng Kung University Taiwan
Ting-Chang Chang National Sun Yat-Sen University Taiwan
Sheng-Po Chang National Cheng Kung University Taiwan
Hsueh-Rong Chang International Rectifier United States
Seo Hyoung Chang Argonne National Laboratory United States
Tien-Sheng Chao National Chiao Tung University Taiwan
Adrian Chasin IMEC Belgium
Shih-Hung Chen IMEC Belgium
Yang-Yin Chen IMEC Belgium
Peng Chen OSRAM Lighting Ltd. China
Weiyou Chen Jilin University China
Dongmin Chen Peking University China
Kevin Chen Hong Kong University of Science and Technology Hong Kong
Kuan-Neng Chen National Chiao Tung University Taiwan
Yu-Hung Chen Industrial Technology Research Institute Taiwan
Min-Cheng Chen National Nano Device Laboratories Taiwan
Chih-ming Chen National Chung Hsing University Taiwan
Frederick Chen Industrial Technology Research Institute Taiwan
Kun-Ming Chen National Nano Device Laboratories Taiwan
Wei-Chen Chen Macronix International Co., Ltd Taiwan
Hsin Chen National Tsing Hwa University Taiwan
Hong Yu Chen Stanford University United States
Yiran Chen University of Pittsburgh United States
An Chen GlobalFoundries United States
Chun-Hu Cheng National Taiwan Normal University Taiwan
Keh-Yung Cheng National Tsing Hua University Taiwan
Chun-Hu Cheng Taiwan
Kangguo Cheng IBM SRDC United States
Cindy Chestek University of Michigan United States
Pascal Chevalier STMicroelectronics France
Christophe Chevallier Rambus Inc. United States
Te-Kuang Chiang National University of Kaohsiung Taiwan
Meng-Hsueh Chiang National Cheng Kung University Taiwan
Chao-Hsin Chien National Chiao-Tung University Taiwan
Alessandro Chini Università di Modena e Reggio Emilia Italy
Hwann-Kaeo Chiou National Central University Taiwan
Yi-Jen Chiu National Sun Yat-Sen University Taiwan
Moonju Cho IMEC Belgium
Byung-Jin Cho Korea Advanced Institute of Science and Technology Korea
Won-Ju Cho Kwangwoon University Korea
Soohaeng Cho Yonsei University Korea
Anthony H.W. Choi University of Hong Kong Hong Kong
Jun Hee Choi Samsung Advanced Institute of Technology Korea
Jung Han Choi Samsung Electronics Korea
Sang-Jun Choi Samsung Electronics Korea
Byong-Deok Choi Hanyang University Korea
Changhwan Choi Hanyang University Korea
Yang-Kyu Choi Korea Advanced Institute of Science and Technology Korea
Jungdal Choi Samsung Electronics Co., Korea
Woong Choi Kookmin University Korea
Sung-Jin Choi University of California at Berkeley United States
Wing Cheung Chong Hong Kong University of Science and Technology Hong Kong
Harold Chong University of Southampton United Kingdom
Srabanti Chowdhury Arizona State University United States
Faisal Chowdhury University of Utah United States
Marc Christophersen Naval Research Laboratory United States
Lukas Chrostowski University of British Columbia Canada
Sheng-Yuan Chu National Cheng Kung University Taiwan
Charles Chu Altera Corporation United States
Ken Chu BAE Systems United States
Rongming Chu HRL Laboratories United States
Leon O. Chua University of California at Berkeley United States
Huey-Ru Chuang National Cheng Kung University Taiwan
Eduardo Chumbes Raytheon Integrated Defense Systems United States
Yueh-Ting Chung National Chiao Tung University Taiwan
David Clark Raytheon Systems Limited United Kingdom
Brian Cobb Holst Centre Netherlands
Robert Coffie TriQuint Semiconductor, Inc. United States
Guy Cohen IBM T.J. Watson Research Center United States
Matt Cole University of Cambridge United Kingdom
Jean-Pierre Colinge TSMC Taiwan
Gabriele Congedo IMEC Belgium
Daniel Connelly Acorn Technologies United States
Ignacio Cortes Instituto de Microelectronica de Barcelona IMB-CNM (CSIC) Spain
Antonio Crespo Air Force Research Laboratory/RYDD United States
Sorin Cristoloveanu INPG France
Kristof Croes IMEC Belgium
Thomas Crowe Virginia Diodes Inc United States
Aurelian Crunteanu XLIM UMR 6172 CNRS France
Felice Crupi Universita della Calabria Italy
Qiang Cui University of Central Florida United States
David Cumming University of Glasgow United Kingdom
Telmo Reis Cunha University of Aveiro Portugal
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Nilay Dağtekin Ecole Polytechnique Fédérale de Lausanne Switzerland
Marc Dandin University of Maryland United States
Bing Dang IBM T.J. Watson Research Center United States
Saptarshi Das Argonne National Laboratory United States
Suman Datta Penn State University United States
Shadi Dayeh University of California at San Diego United States
Jean-Claude De Jaeger IEMN France
Luca De Michielis Ecole Polytechnique Fédérale de Lausanne Switzerland
Michelly de Souza Centro Universitario da FEI Brazil
William Deal Northrop Grumman Corporation United States
M. Jamal Deen McMaster University Canada
David Deen University of Minnesota United States
Nicolas Defrance IEMN - UMR8520 France
Jesus del Alamo Massachusetts Institute of Technology United States
Sylvain Delage Alcatel-Thales III-V Lab France
George Deligeorgis Foundation for Research and Technology Hellas Greece
Jeffrey DeNatale Teledyne Scientific Company United States
Marie Denison Texas Instruments Inc. United States
Dan Denninghoff Teledyne Scientific & Imaging United States
Eugenio Dentoni Litta KTH Royal Institute of Technology Sweden
Joff Derluyn EpiGaN Belgium
Sarit Dhar Auburn University United States
Charalabos Dimitriadis Aristotle University of Thessaloniki Greece
A. Thanasis Dimoulas NCSR Demokritos Greece
Don Disney Avogy Inc. United States
Philippe Dollfus Universite Paris Sud / CNRS France
Gary Dolny Fairchild Semiconductor United States
Sourabh Dongaonkar Purdue University United States
Gerben Doornbos TSMC Belgium
Benjamin Dormieu EASII-IC France
Mircea Dragoman IMT-Bucharest Romania
Rachid Driad Fraunhofer IAF Germany
Pei-Ying Du Macronix International Co., Ltd. Taiwan
Wei Du University of Arkansas United States
Zhaoyun Duan University of Electronic Science and Technology of China China
Emmanuel Dubois IEMN France
Ray Duffy Tyndall National Institute Ireland
Steve Durbin University at Buffalo United States
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Heribert Eisele University of Leeds United Kingdom
Kazuhiko Endo AIST Japan
Roman Engel-Herbert Penn State University United States
Olof Engstrom Chalmers University of Technology Sweden
Milton  Ericson Oak Ridge National Laboratory United States
Mark Eskew Texas Instruments Inc. United States
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Shoushan Fan Tsinghua University China
Zhiyong Fan Hong Kong University of Science and Technology Hong Kong
Ching-Lin Fan National Taiwan University of Science and Technology Taiwan
Ming-Long Fan National Chiao Tung University Taiwan
Zheng Fang Nanyang Technological University Singapore
Andrea Fantini IMEC Belgium
Joel Fastenau IQE, Inc. United States
Patrick Fay University of Notre Dame United States
Pierre Fazan Micron Technology Belgium
Jonathan Felbinger Booz Allen Hamilton United States
Qian Feng Xidian University China
Shiwei Feng Beijing university of technology China
Philip Feng Case Western Reserve University United States
Oscar Fernandez CSEM Switzerland
Alessandro Ferrara University of Twente Netherlands
Gianluca Fiori University of Pisa Italy
Massimo Fischetti University of Texas at Dallas United States
Tor Fjeldly Norwegian University of Science and Technology Norway
Denis Flandre Université catholique de Louvain Belgium
Arash Fomani University of Waterloo Canada
Chung Wah Fon California Institute of Technology United States
Xuanyao Fong Purdue University United States
Guglielmo Fortunato CNR-IMM Italy
Jerry Fossum University of Florida United States
Eric Fossum Dartmouth College United States
Anne-Laure Franc IMEP-LAHC France
Jacopo Franco IMEC Belgium
Martin Frank IBM T.J. Watson Research Center United States
Marcus Freitag IBM T.J. Watson Research Center United States
Peter Friedrichs Infineon Technologies AG Germany
Lan Fu Australian National University Australia
Wangyang Fu University of Basel Switzerland
Yongqing Fu University of the West of Scotland United Kingdom
Naoto Fujishima Fuji Electric Germany
Takafumi Fukushima Tohoku University Japan
Mamoru Furuta Kochi University of Technology Japan
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Mark Gajda NXP Semiconductors United Kingdom
Philippe Galy STMicroelectronics France
Jeff Gambino IBM Microelectronics Division United States
Harold Gamble Queen's University Belfast United Kingdom
Francisco Gamiz Universidad de Granada Spain
Kartik Ganapati Intermolecular Inc. United States
Bin Gao Peking University China
Christophe Gaquiere IEMN France
Francisco Garcia Sanchez Universidad Simon Bolivar Venezuela
Luis  Garcia-Gancedo University of Cambridge United Kingdom
Yordan Georgiev Tyndall National Institute Ireland
Pantelis Georgiou Center of Bio-inspired Technology United Kingdom
Friedel Gerfers Aquantia United States
Nadine Gergel-Hackett Mary Baldwin College United States
Gérard Ghibaudo IMEP-LAHC France
Ramin Ghodsi Micron Technology, Inc. United States
Martin Giles Intel Corporation United States
David Gilmer Sematech United States
Salvador Gimenez Centro Universitário da FEI Brazil
Benito Gimeno University of Valencia Spain
Marco Girolami CNR Italy
Gino Giusi University of Messina Italy
Marta Gladysiewicz Wroclaw Univesity of Technology Poland
Elena Gnani Universita di Bologna Italy
Ashish Goel Broadcom Corporation United States
Neil Goldsman University of Maryland United States
Songbin Gong University of Illinois United States
Jung-Suk Goo GlobalFoundries United States
Stephen Goodnick Arizona State University United States
Chakravarthy Gopalan Adesto Technologies United States
Harald Gossner Intel Corp. Germany
Ludovic Goux IMEC Belgium
Bogdan Govoreanu IMEC Belgium
Nitin Goyal Carinthian Tech Research Austria
Wladek Grabinski Ecole Polytechnique Fédérale de Lausanne Switzerland
Samuel Graham Georgia Institute of Technology United States
Jan Grahn Chalmers University of Technology Sweden
Nicolas Grandjean Ecole Polytechnique Fédérale de Lausanne Switzerland
Ralf Granzner Technische Universität Ilmenau Germany
Tibor Grasser Technical University of Vienna Austria
Michael Gribelyuk IBM Corporation United States
Zach Griffith Teledyne Scientific Company United States
Patrick Grillot Philips Lumileds Lighting United States
Marius Grundmann Universitaet Leipzig Germany
Qilin Gu TriQuint Semiconductor, Inc. United States
Weihua Guan Yale University United States
Ximeng Guan IBM Corporation United States
David Gundlach National Institute of Standards and Technology United States
Xiaojun Guo Shanghai Jiao Tong University China
Yufeng Guo Nanjing University of Posts and Telecommunications China
Jia Guo ON Semiconductor United States
L. Jay Guo University of Michigan United States
Jing Guo University of Florida United States
Congzhong Guo Carnegie Mellon University United States
Suyog Gupta Stanford University United States
Augusto Gutierrez-Aitken Northrop Grumman Corporation United States
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Soufien Haffouz National Research Council Canada Canada
Bruce Hamilton University of Manchester United Kingdom
Jin-Woo Han NASA Ames Research Center United States
Masami Hane Renesas Electronics Corporation Japan
Yue Hao Xidian University China
Samiul Haque Nokia Research Centre United Kingdom
H. Rusty Harris Texas A&M University United States
Hideki Hasegawa Hokkaido University Japan
Pouya Hashemi IBM Corporation United States
Tamotsu Hashizume Hokkaido University Japan
Haroldo Hattori University of New South Wales at the Australian Defence Force Academy Australia
Paul-Henri Haumesser CEA-LETI-MINATEC France
Jin He Peking University China
Jr Hau He National Taiwan University Taiwan
Huanyu He Rensselear Polytechinc Institute United States
Dawei Heh TSMC Taiwan
Gerhard Heise Munich University of Applied Sciences Germany
Bahman Hekmatshoar IBM T.J. Watson Research Center United States
Per-Erik Hellstrom KTH Royal Institute of Technology Sweden
Christoph Henkel KTH Royal Institute of Technology Sweden
Todd Henry Varian Semiconductor Equipment Associates United States
George Henry Northrop Grumman United States
Agustin Herrera Universidad Veracruzana Mexico
Joseph Herzog University of Arkansas United States
Masataka Higashiwaki National Institute of Information and Communications Technology Japan
Richard Hill Sematech United States
Oliver Hilt FBH Berlin Germany
Christopher Hinkle University of Texas at Dallas United States
Kazuyuki Hirama Waseda University Japan
Toshiro Hiramoto University of Tokyo Japan
Masanobu Hiroki NTT Photonics Laboratories Japan
Digh Hisamoto Hitachi Ltd. Japan
Johnny Ho City University of Hong Kong Hong Kong
Mon-Shu Ho National Chung Hsing University Taiwan
ChiaHua Ho National Nano device Laboratories Taiwan
Kai Ming Ho Iowa State University United States
Chih-Hsiang Ho Purdue University United States
Karl Hobart Naval Research Laboratory United States
Chris Hobbs Sematech United States
Susanne Hoffmann-Eifert Forschungszentrum Jülich GmbH Germany
Raymond Hoheisel U.S. Naval Research Laboratory United States
Alexander Hölke X-FAB Malaysia
Hiroaki Honjo NEC Japan
Christiana Honsberg Arizona State University United States
Kazushige Horio Shibaura Institute of Technology Japan
Ray-Hua Horng National Chung Hsing University Taiwan
Tzyy-Sheng Horng National Sun Yat-Sen University Taiwan
Hideo Hosono Tokyo Institute of Technology Japan
Tuo-Hung Hou National Chiao Tung University Taiwan
Robert Howell Northrop Grumman Electronic Systems United States
Judy Hoyt Massachusetts Institute of Technology United States
Chih-Hung Hsiao National Cheng Kung University Taiwan
Yi-Hsuan Hsiao Macronix International Co. Ltd. Taiwan
Ken Hsieh Macronix International Co. Ltd. Taiwan
Gen-Wen Hsieh University of Cambridge United Kingdom
Yue-Ming Hsin National Central University Taiwan
Shawn Hsu National Tsing Hua University Taiwan
Yung-Yu Hsu MC10 Inc. United States
Weida Hu Shanghai Institute of Technical Physics China
Hsin-Hui Hu National Taipei University of Technology Taiwan
Chenming Hu University of California at Berkeley United States
Peng Huang Institute of Microelectronics China
JianJang Huang National Taiwan University Taiwan
Guo-Wei Huang National Nano Device Laboratories Taiwan
Chih-Fang Huang National Tsing Hua University Taiwan
Jing-Shun Huang Yale University United States
Karim Huet Excico France
Raymond Hueting University of Twente Netherlands
Brett Hull Cree, Inc. United States
Gary Hunter NASA Glenn Research Center United States
Paul Hurwitz Jazz Semiconductor United States
Muhammad Hussain King Abdullah University of Science and Technology Saudi Arabia
Tahir Hussain HRL Laboratories LLC United States
Hyunsang Hwang Pohang University of Science and Technology Korea
Cheol Seong Hwang Seoul National University Korea
Yoosang Hwang Samsung Electronics Korea
Chi-Sun Hwang ETRI Korea
Injun Hwang Samsung Electronics Korea
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Giuseppe Iannaccone Università di Pisa Italy
Enrique Iborra Universidad de Madrid Spain
Daniele Ielmini Politecnico di Milano Italy
hesameddin Ilatikhameneh Purdue University United States
Tadahiro Imada Fujitsu Laboratories Japan
Sven Ingebrandt University of Applied Sciences Kaiserslautern Germany
Benjamin Iñiguez Universitat Rovira i Virgili Spain
Dimitris Ioannou George Mason University United States
Adrian Mihai Ionescu Ecole Polytechnique Fédérale de Lausanne Switzerland
Farokh Irom Jet Propulsion Laboratory United States
Hidetoshi Ishida Matsushita Electric Industrial Co. Ltd Japan
Yasuaki Ishikawa Nara Institute of Science and Technology Japan
Hiroshi Ishiwara Tokyo Institute of Technology Japan
Jose Ignacio Izpura Universidad Politecnica de Madrid Spain
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Warren Jackson HP Labs United States
Vibhor Jain IBM Corporation United States
John Jameson Adesto Technologies United States
Balakrishnam Jampana University of Delaware United States
Chia Jan Intel Corporation United States
Jin Jang Kyung Hee University Korea
Gerardo Jaramillo University of California at Davis United States
Xavier Jehl CEA-INAC France
Debdeep Jena University of Notre Dame United States
Erik Jeng Chung Yuan Christian University Taiwan
Sanghun Jeon Korea University Korea
Jae Kyeong Jeong Inha University Korea
Doo Seok Jeong Korea Institute of Science and Technology Korea
Jaewook Jeong Daegu Gyeongbuk Institute of Science & Technology Korea
Rashmi Jha University of Toledo United States
Rui Jia Chinese Academy of Sciences China
Fu-Yen Jian National Sun Yat-Sen University Taiwan
Anquan Jiang Fudan University China
Lei Jiang Intel Corporation United States
Tengfei Jiang University of Texas at Austin United States
Yanfeng Jiang University of Minnesota United States
Chongqing Jiao North China Electric Power University China
Jun Jiao Portland State University United States
K.B. Jinesh NXP Semiconductors Netherlands
Jungwoo Joh Texas Instruments Inc. United States
Kevin Jones University of Florida United States
Aniruddha Joshi Skyworks Solutions Inc. United States
Kazukiyo Joshin Fujitsu Laboratories Japan
Colin Joye Naval Research Laboratory United States
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Aditya Kalavagunta COMSOL Inc. United States
Karol Kalna Swansea University United Kingdom
Deepak Kamalanathan Adesto Technologies United States
Yoshiki Kamata Toshiba corporation Japan
Theodore Kamins Stanford University United States
Edwin Kan Cornell University United States
Prem Kumar  Kandaswamy IMEC Belgium
Jinfeng Kang Peking University China
Myunggil Kang Samsung Electronics Korea
Po-Ching Kao National Chiayi University Taiwan
Vassili Karanassios University of Waterloo Canada
Eric Karl Intel TMG United States
Norihide Kashio NTT Photonics Laboratories Japan
Ilia Katardjiev Uppsala University Sweden
Brajesh Kaushik Indian Institute of Technology, Roorkee India
Yusuke Kawaguchi Toshiba Corporation Japan
Takeshi Kawano Toyohashi University of Technology Japan
Martijn Kemerink Technical University Eindhoven Netherlands
Ming-Dou Ker National Chiao-Tung University Taiwan
Pranita Kerber IBM Corporation United States
Andreas Kerber GlobalFoundries, Inc. United States
Vishal Kesari Microwave Tube Research & Development Centre India
Sameh Khalil HRL Laboratories United States
Alexander  Khitun University of California at Riverside United States
Wing-Hung Ki Hong Kong University of Science and Technology Hong Kong
Toshihide Kikkawa Transphorm Japan Japan
Akihiko Kikuchi Sophia University Japan
Valeriya Kilchytska Université catholique de Louvain Belgium
Sanghyeon Kim University of Tokyo Japan
Hogyoung Kim Seoul National University of Science and Technology Korea
Tae Geun Kim Korea University Korea
Dae Hwan Kim Kookmin University Korea
Dong Myong Kim Kookmin University Korea
Kyu-Sang Kim Sangji University Korea
Jongbaeg Kim Yonsei University Korea
Sun-Jung Kim Samsung Korea
Kyung Rok Kim Ulsan National Institute of Science and Technology Korea
Deok-kee Kim Sejong University Korea
Sang-Mook Kim Korea Photonics Technology Institute Korea
Hak-Rin Kim Kyungpook National University Korea
Do Hwan Kim Soongsil University Korea
Taehoon Kim Micron Technology, Inc. United States
Sungrae Kim Maxim Integrated United States
Chris Kim University of Minnesota United States
Jeehwan Kim IBM T.J. Watson Research Center United States
Raseong Kim Intel Corporation United States
SangBum Kim IBM T.J. Watson Research Center United States
Tae-Woo Kim Sematech United States
Tsunenobu Kimoto Kyoto University Japan
Mutsumi Kimura Ryukoku University Japan
Ya-Chin King National Tsing Hwa University Taiwan
Koji Kita University of Tokyo Japan
Masatoshi Kitamura Kobe University Japan
Isik Kizilyalli Avogy Inc United States
Hagen Klauk Max Planck Institute for Solid State Research Germany
Dietmar Knipp Jacobs University Bremen Germany
Joachim Knoch RWTH Aachen University Germany
Wen Ko Case Western Reserve University United States
Andrew Koehler US Naval Research Laboratory United States
Erhard Kohn University of Ulm Germany
James Komiak BAE Systems United States
Sang-Mo Koo Kwangwoon University Korea
John Kouvetakis Arizona State University United States
Alexey Kovalgin University of Twente Netherlands
Masato Koyama Toshiba Corp Japan
Charles Krafft University of Maryland United States
Frederik Krebs Technical University of Denmark Denmark
Viktor Krozer Goethe University of Frankfurt am Main Germany
Valeriya  Kudina Institute of Semiconductor Physics Ukraine
Witold Kula Micron Technology, inc. United States
M. Jagadesh Kumar Indian Institute of Technology India
Abhishek Kumar University of Cambridge United Kingdom
Cheng Kuo National Chiao Tung University Taiwan Taiwan
Heinrich Kurz RWTH Aachen Germany
Jan Kuzmik Slovak Academy of Sciences Slovakia
Masaaki Kuzuhara University of Fukui Japan
Jang-Yeon Kwon Yonsei University Korea
Hyuck-In Kwon Chung-Ang University Korea
Wook Hyun Kwon Samsung Electronics Korea
Ioannis (John) Kymissis Columbia University United States
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Peter Lagger Infineon Technologies Austria AG Austria
Peter Lai University of Hong Kong Hong Kong
Wei-Chih Lai National Cheng Kung University Taiwan
Chao Sung Lai Chang Gung University Taiwan
James Lamb California Institute of Technology United States
Benoit Lambert UMS France
Mark Lantz IBM Research - Zurich Switzerland
Thomas Lanz Zurich University of Applied Sciences Switzerland
Luca Larcher Università di Modena e Reggio Emilia Italy
Kei May Lau Hong Kong University of Science and Technology Hong Kong
Isaac Lauer IBM Corporation United States
Christian Lavoie IBM T.J. Watson Research Center United States
David Leadley University of Warwick United Kingdom
Kangwook Lee Tohoku University Japan
Naesung Lee Sejong University Korea
Byoung Hun Lee Gwangju Instititue of Science and Technology Korea
Hi-Deok Lee Chungnam National University Korea
Jae-Duk Lee Samsung Electronics Co. Ltd Korea
Seho Lee Hynix Korea
hyungdong lee SK Hynix Korea
Tae-Woo Lee Pohang University of Science and Technology Korea
Jong-Kwon Lee LG Display Korea
Jae-Hoon Lee Samsung Electronics Co., Ltd. Korea
Cheol Jin Lee Korea University Korea
Jung-Hee Lee Kyungpook National University Korea
Jeong-Soo Lee Pohang University of Science and Technology Korea
Ga Won Lee Chungnam National University Korea
Myung-Jae Lee Yonsei University Korea
Jae-Kyu Lee Samsung Electronics Co. Ltd Korea
Dong-Seon Lee Gwangju Institute of Science and Technology Korea
Jong-Ho Lee Seoul National University Korea
Sung-Sam Lee Samsung Electronics Korea
Yong Tak Lee Gwangju Institute of Science and Technology Korea
Jiyoul Lee Holst Centre / TNO Netherlands
Chengkuo Lee National University of Singapore Singapore
Dai-Ying Lee Macronix International Company Taiwan
Hengyuan Lee Industrial Technology Research Institute Taiwan
Minhung Lee National Taiwan Normal University Taiwan
Ching-Sung Lee Feng Chia University Taiwan
Sungsik Lee University of Cambridge United Kingdom
Dok Won Lee Stanford University United States
Dong Seup Lee Massachusetts Institute of Technology United States
Eero Lehtonen University of Turku Finland
Wei Lei Southeast University China
Benjamin Lemke Endress+Hauser GmbH+Co.KG Germany
Alison Lennon University of New South Wales Australia
Francois Leonard Sandia National Laboratories United States
Ted Letavic IBM Corporation United States
Henri Lezec National Institute of Standards and Technology United States
Yun Li Nanjing University China
Ming-Fu Li Fudan University China
Yuanchun Li City University of Hong Kong Hong Kong
Xiang Li A*STAR Institute of Microelectronics Singapore
Jiantong Li KTH Royal Institute of Technology Sweden
Pei-Wen Li National Central University Taiwan
Xu Li University of Glasgow United Kingdom
Chong Li University of Glasgow United Kingdom
Tao Li University of Michigan United States
Lu Li University of Oklahoma United States
Kejia Li University of Virginia United States
Guangyong Li University of Pittsburgh United States
Zhongda Li Rensselaer Polytechnic Institute United States
You Li IBM Corporation United States
Yufeng Li Luminus Devices United States
Yuanyuan Li Intel Corp. United States
Hong Li University of California at Santa Barbara United States
Xiuling Li University of Illinois United States
Jing-Jing Li Arizona State University United States
Yung Liang National University of Singapore Singapore
Gengchiau Liang National University of Singapore Singapore
Lei Liao Wuhan University China
Jason T.S. Liao Intel Corporation United States
Yee Fun Lim Institute of Materials Research and Engineering Singapore
Jianqiang Lin Natioinal University of Singapore Singapore
Jian-Yang Lin National Yunlin University of Science and Technology Taiwan
Yu-Shyan Lin National Dong Hwa University Taiwan
Chrong-Jung Lin National Tsing Hua University Taiwan
Horng-Chih Lin National Chiao Tung University Taiwan
Chih-Lung Lin National Cheng Kung University Taiwan
Chien-Chung Lin National Chiao-Tung University Taiwan
Ching Fuh Lin National Taiwan University Taiwan
Yu-Yu Lin Macronix International Co., Ltd. Taiwan
Shih-Yen Lin Academia Sinica Taiwan
Chung-Hsun Lin IBM Corporation United States
Erik Lind Lund University Sweden
Eike Linn RWTH Aachen University Germany
Juin Liou University of Central Florida United States
Ming Liu Institute of Microelectronics China
Xiaoyan Liu Peking University China
Zhao Jun Liu Hong Kong University of Science and Technology Hong Kong
Zhihong Liu Singapore-MIT Alliance for Research and Technology Singapore
Han-Wen Liu National Chung Hsing University Taiwan
Wen-Chau Liu National Cheng Kung University Taiwan
Chee-Wee Liu National Taiwan University Taiwan
Bo Liu University of Florida United States
Chung-Chiun Liu Case Western Reserve University United States
Zuoguang Liu IBM Corporation United States
Tsu-Jae Liu University of California at Berkeley United States
Yang Liu IBM Research United States
Daniel Lizzit University of Udine Italy
Guo-Qiang (Patrick) Lo Institute of Microelectronics Singapore
Yu-Hwa Lo University of California at San Diego United States
Wei-Yip Loh International Sematech United States
Andrew Lohn Sandia National Labs United States
Shibing Long Chinese Academy of Sciences China
Paolo Lorenzi Università di Roma "La Sapienza" Italy
Wen-Shiung Lour National Taiwan Ocean University Taiwan
Rickard Lövblom ETH Zürich Switzerland
Hai Lu Nanjing University China
Yan Lu Hong Kong University of Science and Technology Hong Kong
Tao-Cheng Lu Macronix International Co. Ltd. Taiwan
Michael Lu National Tsing Hua University Taiwan
JengPing Lu Palo Alto Reseach Center United States
Nan Lu SanDisk Corp. United States
Zhichao Lu GlobalFoundries United States
Bin Lu Massachusetts Institute of technology United States
Ning Lu IBM Corporation United States
Wei Lu University of Michigan United States
Mathieu Luisier ETH Zürich Switzerland
Lidia Lukasiak Warsaw University of Technology Poland
Mark Lundstrom Purdue University United States
Xiao Rong Luo University of Electronic Science and Technology of China China
Serge Luryi State University of New York at Stony Brook United States
Hangbing Lv Institute of Microelectronics China
Ben-Je Lwo National Defense University Taiwan
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Hanbin Ma University of Cambridge United Kingdom
Massimo Macucci Universita di Pisa Italy
Shankar N Ekkanath Madathil University of Sheffield United Kingdom
Narihiko Maeda NTT Photonics Laboratories Japan
Paolo Magnone University of Bologna Italy
Wim Magnus IMEC Belgium
Blanka Magyari-Kope Stanford University United States
Santanu Mahapatra Indian Institute of Science India
Souvik Mahapatra Indian Institute of Technology Bombay India
Hassan Maher Université de Sherbrooke Canada
Siddheswar Maikap Chang Gung University Taiwan
Yahia Makableh Uinversity of Arkansas United States
Sergej Makovejev Université catholique de Louvain Belgium
B. Gunnar Malm KTH Royal Institute of Technology Sweden
Yiannos Manoli IMTEK Germany
Davide Mantegazza Intel Corporation United States
Siegfried Mantl Forschungszentrum Jülich GmbH Germany
Duo Mao Micron Technology, Inc. United States
Michel Marso University of Luxembourg Luxembourg
Koen Martens IMEC Belgium
Isidro Martin Universitat Politecnica de Catalunya Spain
Samuel Martin Texas Instruments Inc. United States
Rodrigo Martins New University of Lisbon Portugal
Kanamura Masahito Transphorm Japan, Inc. Japan
Carlos Mastrangelo University of Utah United States
Witek Maszara Advanced Micro Devices Inc. United States
Matthew Matheny California Institute of Technology United States
Elison Matioli Massachusetts Institute of technology United States
Tokiyoshi Matsuda Ryukoku University Japan
Baquer Mazhari Indian Institute of Technology Kanpur India
Sudip Mazumder University of Illinois at Chicago United States
Brian Mazzeo Brigham Young University United States
Colin McAndrew Freescale Semiconductor United States
Liam McDaid University of Ulster United States
Keith McIntosh PV Lighthouse Australia
Paul McIntyre Stanford University United States
Joe McPherson Texas Instruments Inc. United States
Farid Medjdoub I.E.M.N - CSAM France
Aidin Mehdipour University of Toronto Canada
Adnan Mehonic University College London United Kingdom
Saumitra Mehrotra Purdue University United States
Gerry Mei Northrop Grumman Corporation United States
johannes meier Oerlikon Solar-Lab SA Switzerland
Ulf Meiners United Monolithic Semiconductors GmbH Germany
Bernd Meinerzhagen TU Braunschweig Germany
Gaudenzio Meneghesso Universita di Padova Italy
Matteo Meneghini University of Padova Italy
Roberto Menozzi University of Parma Italy
Stephan Menzel RWTH Aachen University Germany
Tsvetelina Merdzhanova Forschungszentrum Jülich GmbH Germany
David Meyer U.S. Naval Research Laboratory United States
Cristina Miccoli STMicroelectronics Italy
Shinji Migita AIST Japan
Piero Migliorato University of Cambridge United Kingdom
Thomas Mikolajick TU Bergakademie Freiberg Germany
José Millán CNM-CSIC Spain
William Milne University of Cambridge United Kingdom
Gao Min Cardiff University United Kingdom
Umesh Mishra University of California at Santa Barbara United States
Yuichiro Mitani Toshiba Corporation Japan
Masataka Miyake Hiroshima University Japan
Yasuyuki Miyamoto Tokyo Institute of Technology Japan
Seiichiro Mizuno Hamamatsu Photonics KK Japan
Bunji Mizuno Panasonic Japan
Xiaoming Mo Wuhan University China
Peter Moens ON Semiconductor Belgium
Swomotra Mohanti University of Utah United States
Dheeraj Mohata RF Micro Devices, Inc. United States
Pedram Mohseni Case Western Reserve University United States
Aniruddha Mondal National Institute of Technology, Agartala India
Bo Monemar Linkoping University Sweden
Christian Monzio Compagnoni Politecnico di Milano Italy
Saurabh Mookerjea Intel Corporation United States
Dong-Il Moon Korea Advanced Institute of Science and Technology Korea
Jeong Moon HRL Laboratories, LLC United States
Yi-Shien Mor TSMC Taiwan
Hervé Morel Université de Lyon, INSA de Lyon France
Jorge Morgado Instituto Superior Técnico Portugal
Takahiro Mori National Institute of Advanced Industrial Science and Technology Japan
Hadis Morkoc Virginia Commonwealth University United States
Hans-Guenther Moser Max-Plank Institute for Physics Germany
Christian Müller Infineon Technologies AG Germany
Niko Münzenrieder ETH Zürich Switzerland
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Kee-Yeol Na Chungbuk Provincial College Korea
Azad Naeemi Georgia Institute of Technology United States
Kianoush Naeli Hewlett Packard United States
Junghyo Nah Chungnam National University Korea
Aneesh Nainani Applied Materials United States
Shu Nakaharai National Institute for Materials Science Japan
Akira Nakajima National Institute of Advanced Industrial Science and Technology Japan
Akira Nakajima University of Sheffield United Kingdom
Yoshiaki Nakamura Osaka University Japan
Ken-ichi Nakayama Yamagata University Japan
Lan Nan University of California at Los Angeles United States
Emilio Nanni Massachusetts Institute of Technology United States
Federico Nardi Politecnico di Milano Italy
Osama Nayfeh U.S. Army Research Laboratory United States
Alexiei Nazarov Institute of Semiconductor Physics Ukraine
Christoph Nebel Fraunhofer Institute IAF Germany
Yael Nemirovsky Technion - Israel Institute of Technology Israel
Philip Neudeck NASA United States
Arnost Neugroschel University of Florida United States
Jacky Ng Hong Kong University of Science and Technology Hong Kong
Viet Hung Nguyen Institute of Physics Viet Nam
Chi-Nung Ni Applied Materials, Inc. United States
Herman Nicolai Holst Centre/TNO Netherlands
Branislav Nikolic University of Delaware United States
Takeki Ninomiya Panasonic Corporation Japan
Yoshifumi Nishi Toshiba Corporation Japan
Yoshio Nishi Stanford University United States
Katsuhiko Nishiguchi NTT Basic Research Laboratories Japan
Tomonori Nishimura University of Tokyo Japan
Virginie Nodjiajim III-V Lab France
Ahmed  Noemaun IBM Corporation United States
Alain Nogaret University of Bath United Kingdom
Takashi Noguchi University of the Ryukyus Japan
Kenji Nomura Tokyo Institute of Technology Japan
Edward Nowak IBM Corporation United States
Gregory Nusinovich University of Maryland United States
Laura Nyns IMEC Belgium
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Anthony Oates TSMC Taiwan
Joachim Oberhammer KTH Royal Institute of Technology Sweden
Akiko Ohata Osaka City University Japan
Yutaka Ohno Nagoya University Japan
Tohru Oka Toyoda Gosei Co., Ltd. Japan
Aaron Oki Northrop Grumman Space Technology United States
Serge Oktyabrsky University at Albany United States
Ali Okyay Bilkent University Turkey
Phil Oldiges IBM Corporation United States
Jorgen Olsson Uppsala University Sweden
Cian O'Mathuna Tyndall National Institue Ireland
Ichiro Omura Toshiba Corporation Japan
Terrance O'Regan U.S. Army Research Laboratory United States
Marius Orlowski Virginia Tech United States
Clemens Ostermaier Infineon Technologies Austria AG Austria
Xin Ou Helmholtz-Zentrum Dresden-Rossendorf Germany
Richard Oxland TSMC Research Center Belgium
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Andrea Padovani Università di Modena e Reggio Emilia Italy
Marco Pala IMEP-LAHC France
Vipindas Pala Cree, Inc. United States
Tomas Palacios Massachusetts Institute of Technology United States
Mohanchand Paladugu BOSCH Switzerland
Pierpaolo Palestri Universita Degli Studi Di Udine Italy
Feng Pan Tsinghua University China
Tung-Ming Pan Chang Gung University Taiwan
Debashis Panda
Saurabh Pandey University of Bologna Italy
Archana Pandey Michigan Technological University United States
Luigi Pantisano GlobalFoundries United States
Nikolas Papadopoulos University of Waterloo Canada
Christos Papavassiliou Imperial College United Kingdom
Krishna Parat Intel Corporation United States
Byung Lyul Park Samsung Electronics Co. Ltd. Korea
Sung-Kye Park SK Hynix Semiconductor Inc. Korea
Nae-Man Park ETRI Korea
Won Il Park Hanyang University Korea
Sung Kyu Park Chung-Ang University Korea
Young-Woo Park Samsung Electronics Korea
Pil Sung Park Ohio State University United States
Hongsik Park IBM T.J. Watson Research Center United States
Stuart Parkin IBM Almaden Research Center United States
John Pasour Naval Research Laboratory United States
Paolo Pavan Universita di Modena e Reggio Emilia Italy
Marcelo Pavanello Centro Universitario da FEI Brazil
Nate Peachey RF Micro Devices United States
Stephen Pearton University of Florida United States
Zingway Pei National Chung Hsing University Taiwan
Marcel Pelgrom Pelgrom Consult Netherlands
Sameer Pendharkar Texas Instruments Inc. United States
Xavier Perpinya CNM-CSIC Spain
Rebecca Peterson University of Michigan United States
Kin-Leong Pey Singapore University of Technology and Design Singapore
Jamie Phillips University of Michigan United States
Gianluca Piazza Carnegie Mellon University United States
Enrico Piccinini Università di Modena e Reggio Emilia Italy
Wiktor Piecek Military University of Technology Poland
Joachim Piprek NUSOD Institute United States
Agostino Pirovano Micron Semiconductor Italia s.r.l. Italy
Dominique Planson Université de Lyon France
Dionyz Pogany Technical University of Vienna Austria
Siddharth Potbhare University of Maryland United States
Vincent Pott LSI Technology Singapore
Siavash Pourkamali University of Texas at Dallas United States
Hoorad Pourzand University of Utah United States
Kirk Prall Micron Technology, Inc. United States
Themis Prodromakis University of Southampton United Kingdom
Rosaria Puglisi CNR Italy
Joaquim Puigdollers Universitat Politecnica Catalunya Spain
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Shu Qin Micron Technology. Inc. United States
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Rahul Radhakrishnan Texas Instruments Inc. United States
Iuliana Radu IMEC Belgium
Nagarajan Raghavan Singapore University of Technology & Design Singapore
Rajib Rahman Purdue University United States
Siddharth Rajan Ohio State University United States
Nirmal Ramaswamy Micron Technology, Inc. United States
Krishnaswamy Ramkumar Cypress Semiconductor United States
Vikas Rana Forschungszentrum Jülich GmbH Germany
V. Ramgopal Rao Indian Institute of Technology Bombay India
Hemant Rao Intel Corporation United States
Jean-Pierre Raskin Université catholique de Louvain Belgium
Manijeh Razeghi Northwestern University United States
Alexander Razzhuvalov Tomsk State University Russia
Vijay Reddy Texas Instruments Inc. United States
Mark Reed Yale University United States
Susanna Reggiani Universita di Bologna Italy
Christian Reichel Fraunhofer Institute for Solar Energy Systems Germany
Hans Reisinger Infineon Technologies Germany
Jingjian Ren SanDisk, Corp United States
J. Apolinar Reynoso-Hernández CICESE Mexico
Bryce Richards Karlsruhe Institute of Technology Germany
Thomas Riedl University of Wuppertal Germany
Jae-Sung Rieh Korea University Korea
Niccolo Rinaldi Universita di Napoli Italy
Matteo Rinaldi Northeastern University United States
Andrew Rinzler University of Florida United States
Rafael Rios Intel Corporation United States
John Robertson University of Cambridge United Kingdom
Noel Rodriguez Universidad de Granada Spain
Mark Rodwell University of California at Santa Barbara United States
John Rogers University of Illinois at Urbana-Champaign United States
Yakov Roizin Tower Semiconductor Ltd. Israel
Guntrade Roll Lund University Sweden
Krunoslav Romanjek CEA-LETI MINATEC France
Sean Rommel Rochester Institute of Technology United States
Niklas Rorsman Chalmers University of Technology Sweden
Mirko Rostewitz Tesat Spacecom Germany
Francis Rotella Peregrine Semiconductor United States
Shad Roundy University of Utah United States
Philippe Roussel IMEC Belgium
Jeremy Rowlette United States
Ananda Roy Intel Corporation United States
Kaushik Roy Purdue University United States
Massimo Rudan Universita di Bologna Italy
Matthias Rudolph Ferdinand-Braun-Institut Germany
Christian Russ Infineon Technologies AG Germany
Jae-Hyun Ryou Georgia Institute of Technology United States
Myung Kwan Ryu Samsung Advanced Institute of Technology Korea
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Stephen Saddow University of South Florida United States
Stefano Saggini University of Udine Italy
Samar Saha Prospicient Devices United States
Gheorghe Ioan Sajin IMT-Bucharest Romania
Redwan Sajjad University of Virginia United States
Shigeki Sakai National Institute of Advanced Industrial Science and Technology Japan
Martin Salinga RWTH Aachen University Germany
Jean-Michel Sallese Ecole Polytechnique Fédérale de Lausanne Switzerland
Giovanni Antonio Salvatore Ecole Polytechnique Fédérale de Lausanne Switzerland
James Salvia SiTime Corporation United States
Sanjiv Sambandan Indian Institute of Science India
Peter Sandvik General Electric - Global Research United States
Nobuyuki Sano University of Tsukuba Japan
Alberto Santarelli University of Bologna Italy
Krishna Saraswat Stanford University United States
Angik Sarkar Intel Corporation United States
Yoshitaka Sasago Hitachi Ltd. Japan
Anup Sasikumar Ohio State University United States
Guido Sasse NXP Semiconductors Netherlands
Hideo Sato Tohoku University Japan
Motoyuki Sato Toshiba Japan
Sangameshwar Saudari IBM Corporation United States
Paul Saunier TriQuint Semiconductor, Inc. United States
Akihito Sawa National Institute of Advanced Industrial Science and Technology Japan
Andrei Sazonov Unviersity of Waterloo Canada
Sigo Scharnholz Institute of Saint Louis France
Jan Schmidt Institute for Solar Energy Research Hamelin Germany
Andries Scholten NXP Semiconductors Netherlands
Frank Scholze Physikalisch-Technische Bundesan-stalt Germany
Dominique Schreurs Katholieke Universiteit Leuven Belgium
Ronald Schrimpf Vanderbilt University United States
Uwe Schroeder NaMLab GmbH Germany
Michael Schröter Technical University Dresden Germany
Michael Schuette TriQuint Semiconductor, Inc. United States
Joel Schulman HRL Laboratories, LLC United States
Hans-Joachim Schulze Infineon Technologies AG Germany
Antonella Sciuto CNR Italy
Dennis Scott Northrop Grumman Corporation United States
Alan Seabaugh University of Notre Dame United States
Matthias  Seelmann-Eggebert Fraunhofer IAF Germany
Svetlana Sejas-Garcia INAOE Mexico
Vladimir  Semyonov Institute of Applied Physics Russia
Kwang Soo Seol Samsung Korea
Ashwin Seshia University of Cambridge United Kingdom
Ravi Sevaganapathy McMaster University Canada
Jiayi Shao Purdue University United States
Abhishek Sharma Carnegie Mellon University United States
Juncong She Sun Yat-sen University China
Chen Shen Fudan University China
Shyh-Chiang Shen Georgia Institute of Technology United States
John Shen Illinois Institute of Technology United States
David Sheridan RFMD United States
Jinn-Kong Sheu National Cheng-Kung University Taiwan
Jin-Wei Shi National Central University Taiwan
Jian Shi Harvard University United States
Jia-Min Shieh National Nano Device Laboratories Taiwan
Naoteru Shigekawa Osaka City University Japan
Chun-Hsing Shih National Chi Nan University Taiwan
Jaekwang Shin Samsung Advanced Institute of Technology Korea
Hyungcheol Shin Seoul National University Korea
Changhwan Shin University of Seoul Korea
Keisuke Shinohara HRL Laboratories, LLC United States
Riichiro Shirota National Chiao Tung University Taiwan
Alex Shluger University College London United Kingdom
Mayank Shrivastava Indian Institute of Science Bangalore India
Max Shulaker Stanford University United States
Porponth Sichanugrist Tokyo Institute of Technology Japan
Grigory Simin University of South Carolina United States
Eddy Simoen IMEC Belgium
Uttam Singisetti University at Buffalo United States
Jagadishwar Sirigiri Bridge12 Techologies Inc. United States
Thomas Skotnicki STMicroelectronics France
Marek Skowronski Carnegie Mellon University United States
Geert Smit NXP semiconductors Netherlands
Joshua Smith IBM T.J. Watson Research Center United States
Phillip Smith BAE Systems United States
Paul Solomon IBM T.J. Watson Research Center United States
Florian Solzbacher University of Utah United States
Aimin Song University of Manchester United Kingdom
Ken'ichiro Sonoda Renesas Technology Corp. Japan
Edén Sorolla Ecole Polytechnique Fédérale de Lausanne Switzerland
Malgorzata Sowinska IHP GmbH Germany
Nicolo Speciale University of Bologna Italy
Sabina Spiga CNR-IMM Italy
Saptharishi Sriram Cree, Inc. United States
Puneet Srivastava Massachusetts Institute of Technology United States
Ashok Srivastava Louisiana State University United States
Zlatan Stanojevic Technical University of Vienna Austria
Michael Stockinger Freescale Semiconductor United States
Robert Street Palo Alto Research Center United States
Dmitri Strukov University of California at Santa Barbara United States
Michele Stucchi IMEC Belgium
Michael Stuckelberger Ecole Polytechnique Fédérale de Lausanne Switzerland
Pin Su National Chiao Tung University Taiwan
Yan-Kuin Su National Cheng Kung University Taiwan
Liang-Yu Su National Taiwan University Taiwan
John Suehle National Institute of Standards and Technology United States
Tetsuya Suemitsu Tohoku University Japan
Amit Suhane IMEC Belgium
Sami Suihkonen Aalto University Finland
R. Scott Summerfelt Texas Instruments Inc. United States
Haifeng Sun Infineon Technologies Austria AG Austria
Xiao Sun Yale University United States
Yanning Sun IBM T.J. Watson Research Center United States
Siddarth Sundaresan GeneSiC Semiconductor United States
Jordi Suñé Universitat Autonoma de Barcelona Spain
Woongje Sung North Carolina State University United States
Toshi-kazu Suzuki Japan Advanced Institute of Science and Technology Japan
Hikari Suzuki Toshiba corporation Japan
Viktor Sverdlov Technical University of Vienna Austria
Michael Swanwick Massachusetts Institute of Technology United States
Vladimir Székely Technical University of Budapest Hungary
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Roozbeh Tabrizian Georgia Institute of Technology United States
Marnix Tack ON Semiconductor Belgium
Munehiro Tada LEAP Japan
Tarek Taha University of Dayton United States
Ya-Hsiang Tai National Chiao Tung University Taiwan
Shinya Takashima Fuji Electric Co. Ltd. Japan
Kenichi Takatori NLT Technologies Japan
Mitsuru Takenaka University of Tokyo Japan
Hideki Takeuchi MEARS Technologies United States
Siddharth Tallur Analog Devices United States
Leng Seow Tan National University of Singapore Singapore
Juan Boon Tan GlobalFoundries Singapore
Yasunori Tanaka AIST Japan
Hideyuki Tanaka University of Tokyo Japan
Zhaoyun Tang Institute of Microelectronics China
Nelson Tansu Lehigh University United States
Alexey Tarasov Georgia Institute of Technology United States
Svetlana Tatic-Lucic Lehigh University United States
Yuan Taur University of California at San Diego United States
Negar Tavassolian Stevens Institute of Technology United States
Augusto Tazzoli Technology Development & Innovation United States
Franz-Josef Tegude University of Duisburg-Essen Germany
James Teherani Massachusetts Institute of Technology United States
Kazuo Terada Hiroshima City University Japan
Masayuki Terai Samsung Electronics Korea
Giuseppe Tettamanzi University of New South Wales Australia
Tsutomu Tezuka Toshiba R&D Center Japan
Iain Thayne University of Glasgow United Kingdom
Aaron Thean IMEC Belgium
Claes Thelander Lund University Sweden
N. David Theodore Freescale Semiconductor Inc. United States
Trevor Thornton Arizona State University United States
Manfred Thumm Karlsruhe Institute of Technology Germany
Luuk Tiemeijer NXP Semiconductors Netherlands
Vinayak Tilak GE Global Research United States
Gregory Timp University of Notre Dame United States
Naveen Tipirneni Vishay Siliconix Inc United States
Jose Maria Tirado University of Castilla-La Mancha Spain
Ashotosh Tiwari University of Utah United States
Yuri Tkachev Silicon Storage Technology, Inc. United States
Hirokuni Tokuda University of Fukui Japan
Maria Toledano-Luque Universidad Complutense de Madrid Spain
Daniel Tomaszewski Institute of Electron Technology Poland
Katsuhiro Tomioka Hokkaido University Japan
Akira Toriumi University of Tokyo Japan
Reydezel Torres-Torres INAOE Mexico
Fabrizio Torricelli Technical University Eindhoven Netherlands
James Tour Rice University United States
Robert Trew North Carolina State University United States
Wen-Jer Tsai Macronix International Co. Ltd. Taiwan
Ming-Jinn Tsai Industrial Technology Research Institute Taiwan
Hideaki Tsuchiya Kobe University Japan
Bing-Yue Tsui National Chiao Tung University Taiwan
Koji Tsunoda Fujitsu Laboratories Ltd. Japan
Hans Tuinhout NXP Semiconductors Netherlands
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Ahsan Uddin University of South Carolina United States
Osamu Ueda Kanazawa Institute of Technology Japan
Hiroyuki Ueda Toyota Central R&D Labs., Inc. Japan
Yasuhiro Uemoto Panasonic Japan
Katsunori Ueno Advanced Power Device Research Association Japan
Keiji Ueno Saitama University Japan
Michael Uren University of Bristol United Kingdom
Miguel Urteaga Teledyne Scientific Company United States
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Alberto Valdes Garcia IBM Research United States
Antonio Valletta CNR Italy
Edward Van Brunt Cree, Inc. United States
Mark van Dal TSMC Europe BV Belgium
Rob van Dalen NXP Semiconductors United States
Chris Van de Walle University of California at Santa Barbara United States
Michiel van Duuren NXP Semiconductors Belgium
Tom van Hemert University of Twente Netherlands
Jan Van Houdt IMEC Belgium
Marleen Van Hove IMEC Belgium
Lode Vandamme Technical University Eindhoven Netherlands
William Vandenberghe University of Texas at Dallas United States
Marleen VanHove IMEC Belgium
Giorgio Vannini University of Ferrara Italy
Kamal  Varadarajan Power Integrations United States
Dhanoop Varghese Texas Instruments Inc. United States
Tim Vasen University of Notre Dame United States
Vladislav Vashchenko Maxim Integrated Products United States
Sam Vaziri KTH Royal Institute of Technology Sweden
Sylvain Vedraine XLIM France
Reinaldo Vega IBM Corporation United States
Dmitry Veksler Sematech United States
Victor Veliadis Northrop Grumman Electronic Systems United States
Georgios Vellianitis TSMC Belgium
Bertrand Vergne ISL France
Alexey Vert Sematech United States
Giovanni Verzellesi University of Modena and Reggio Emilia Italy
Andrei Vescan RWTH Aachen University Germany
Ramakrishna Vetury RF Micro Devices United States
Elisa Vianello CEA–LETI MINATEC France
Carlos Vicente Aurorasat Spain
Anthony Villalon CEA-LETI France
Christian Vogt ETH Zürich Switzerland
Yuriy Vygranenko ISEL Portugal
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Richard Wachnik IBM Corporation United States
Romain Wacquez CEA France
Christian Walczyk IHP Germany
Niamh Waldron IMEC Belgium
Andrew Walker Schiltron Corporation United States
Ross Walker University of Utah United States
Robert Wallace University of Texas at Dallas United States
Jeffrey Walling University of Utah United States
Patrick Waltereit Fraunhofer-IAF Germany
Qing Wan Ningbo Institute of Material Technology and Engineering China
Jing Wan IMEP-LAHC France
Ziyang Wang IMEC Belgium
Xin Peng Wang IMEC Belgium
Hao Wang Hubei University China
Cheng-Wei Wang Northwest Normal University China
Zheyao Wang Tsinghua University China
Ming Wang Institute of Microelectronics China
Mingxiang Wang Soochow University China
Qi Wang Beijing University of Posts and Telecommunications China
Runsheng Wang Peking University China
Zhongrui Wang Nanyang Technological University Singapore
Huei Wang National Taiwan University Taiwan
S. H. Wang National Cheng Kung University Taiwan
Ruey-Lue Wang National Kaohsiung Normal University Taiwan
Shih Ming Wang United Microelectronics Corporation Taiwan
Xingsheng Wang University of Glasgow United Kingdom
Lingquan (Dennis) Wang Suvolta Inc United States
Kang Wang University of California at Los Angeles United States
Miaomiao Wang IBM Research United States
Ronghua Wang Transphorm Inc. United States
Chuan Wang Qualcomm Technologies, Inc United States
Weike Wang IBM Corporation United States
Han Wang University of Southern California United States
Xufeng Wang Purdue University United States
Zhiqiang Wei Panasonic Japan
Hai Wei Stanford University United States
Nils Weimann Ferdinand-Braun-Institut Germany
Charles Weitzel - United States
Lars-Erik Wernersson Lund University Sweden
Christian Wetzel Rensselaer Polytechnic Institute United States
Gregory Whiting Palo Alto Research Center United States
Colin Whyte University of Strathclyde United Kingdom
Benjamin Williams University of California at Los Angeles United States
Gilson Wirth UFRGS Brazil
Larry Witkowski TriQuint Semiconductor, Inc. United States
William Wong University of Waterloo Canada
Man Wong Hong Kong University of Science and Technology Hong Kong
Hei Wong City University of Hong Kong Hong Kong
Jiyong Woo Pohang University of Science and Technology Korea
Dirk Wouters IMEC Belgium
Tian-Li Wu IMEC Belgium
Huaqiang Wu Tsinghua University China
Tom Wu King Abdullah University of Science and Technology Saudi Arabia
Yung-Chun Wu National Tsing Hua University Taiwan
Yung-Hsien Wu National Tsing-Hua University Taiwan
San Lein Wu Cheng Shiu University Taiwan
Jyh-Ming  Wu National Tsing Hua University Taiwan
Yuh-Renn Wu National Taiwan University Taiwan
Chung-Chih Wu National Taiwan University Taiwan
Meng-Chyi Wu National Tsing Hua University Taiwan
Ernest Wu IBM Microelectronics Division United States
Yifeng Wu CREE SBTC United States
Joachim Wuerfl Ferdinand-Braun-Institut Germany
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Fengnian Xia Yale University United States
Gang Xie Zhejiang University China
Huili Xing University of Notre Dame United States
Wendong Xing IBM SRDC United States
Qihua Xiong Nanyang Technological University Singapore
Feng Xiong University of Illinois at Urbana-Champaign United States
Yong Xu IMEP-CNRS/INPG France
Yong Xu Wayne State University United States
Zheng Xu IBM Corporation United States
Min Xu Linear Technology United States
Nuo Xu University of California at Berkeley United States
Xin Xu Purdue University United States
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Alex Yakovlev Newcastle University United Kingdom
Akio Yamamoto Fukui University Japan
Yusuke Yamashita Toyota Central R&D Laboratories Inc Japan
Manabu Yanagihara Panasonic Japan
Shinhyuk Yang ETRI Korea
Chih-Ciao Yang National Cheng-Kung University Taiwan
Min Yang IBM T.J. Watson Research Center United States
Kaiyuan Yang University of Michigan United States
Jianhua Yang Hewlett-Packard Laboratories United States
Hiroshi Yano University of Tsukuba Japan
Tetsuji Yasuda National Institute of Advanced Industrial Science and Technology Japan
Huaiyu Ye Delft University of Technology Netherlands
Peide Ye Purdue University United States
Ping-Hung  Yeh Tamkang University Taiwan
Yee-Chia Yeo National University of Singapore Singapore
Chun Wing Yeung University of California at Berkeley United States
Youngki Yoon University of Waterloo Canada
Jun-Bo Yoon Korea Advanced Institute of Science and Technology Korea
Sung Min Yoon Kyung Hee University Korea
Jingbi You University of California at Los Angeles United States
Chadwin Young University of Texas at Dallas United States
Darrin Young University of Utah United States
Kristina Young-Fisher Sematech United States
HongYu Yu South University of Science and Technology of China China
Zhiping Yu Tsinghua University China
Shimeng Yu Arizona State University United States
Tao Yu Massachusetts Institute of Technology United States
Ze Yuan Stanford University United States
Yuanzheng Yue University of Notre Dame United States
Chong Man Yun TRinno Technology Korea
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Alban Zaka GlobalFoundries Dresden Module One LLC & Co. KG Germany
Jaime Alberto Zamudio Flores Kassel University Germany
Hsiao-Wen Zan National Chiao Tung University Taiwan
Hui Zang GlobalFoundries United States
Enrico Zanoni Universita di Padova Italy
Alexander Zaslavsky Brown University United States
Roland Zeisel OSRAM Opto Semiconductors GmbH Germany
Yuping Zeng University of California at Berkeley United States
Moustafa Zerarka LAAS France
Carl-Mikael Zetterling KTH Royal Institute of Technology Sweden
Ning Zhan IBM SRDC United States
Leqi Zhang IMEC Belgium
Shengdong Zhang Peking University China
Xiaodan Zhang Nankai University China
Hua Zhang Nanyang Technological University Singapore
Zhi-Bin Zhang Uppsala University Sweden
Qingchun Zhang Cree, Inc. United States
Xiao Zhang Stanford University United States
Enxia Zhang Vanderbilt University United States
Haifeng Zhang Arizona State University United States
Dingyou Zhang Rensselaer Polytechnic Institute United States
Yongxi Zhang Texas Instruments Inc. United States
Yuying Zhang University of Utah United States
Qing-Tai Zhao Forschungszentrum Jülich GmbH Germany
Xin Zhao Massachusetts Institute of Technology United States
Feng Zhao Washington State University United States
Victor Zhirnov Semiconductor Research Corp. United States
Hai Zhou Wuhan University China
Qi Zhou University of Electronic Science and Technology of China China
Yuanzhong Zhou Analog Devices United States
Weidong Zhou University of Texas at Arlington United States
Chunxiang Zhu National University of Singapore Singapore
Jimmy Zhu Carnegie Mellon University United States
Maryam Ziaei IDT Inc. United States
Babak Ziaie Purdue University United States
Thomas Zimmer Université de Bordeaux France
Dimitrios Zografopoulos CNR – IMM Italy
Stefan Zollner New Mexico State University United States
John Zolper DARPA United States
Christian Zorman Case Western Reserve University United States
Xinbo Zou Hong Kong Univesity of Science and Technology Hong Kong
Xudong Zou University of Cambridge United Kingdom
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