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2014 T-ED Golden Reviewers

The ability of the IEEE Transactions on Electron Devices to publish high quality papers has always been, and will continue to be, critically dependent upon the generosity, expertise, and dedication of the reviewers who volunteer their time for this purpose.  The Editorial Board of T-ED wish to gratefully acknowledge the individuals inside and out of the Electron Devices Society who have so selflessly contributed to this effort.

The IEEE Transactions on Electron Devices List of Golden Reviewers for 2014

 

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Name Institution Country
Katsumi Abe Tokyo Institute of Technology Japan
David Abe U.S. Naval Research Laboratory United States
Sheel Aditya Nanyang Technological University Singapore
Aryan Afzalian TSMC Europe BV Belgium
Sapan Agarwal University of California at Berkeley United States
Paula Agopian University of Sao Paulo Brazil
Herzl Aharoni Ben-Gurion University of the Negev Israel
Khaled Ahmed Intermolecular, Inc. United States
JungChak Ahn Samsung Electronics Co., Ltd. Korea
Dong-Ho Ahn Samsung Electronics, Co. Ltd. Korea
Arvind Ajoy University of Notre Dame United States
Hayri Akin Intel Corporation United States
Anatoli Aksenchyk Belarusian State University of Informatics and Radioelectronics Belarus
Akin Akturk University of Maryland United States
Khairul Alam East West University Bangladesh
Syed Alam Everspin Technologies United States
Muhammad Alam Purdue University United States
Alfonso AlarcĂłn University of Paris-Sud France
Stefano Alberti Ecole Polytechnique Fédérale de Lausanne Switzerland
Terry Alford Arizona State University United States
Ashkar Ali Intel Corporation United States
Nasir  Alimardani Oregon State University United States
Mohammed Alomari University of Ulm Germany
Cem  Alper Ecole Polytechnique Fédérale de Lausanne Switzerland
Salvatore Amoroso University of Glasgow United Kingdom
Xia An Peking University China
Bulusu Anand Indian Institute of Technology India
M. Anantram University of Washington United States
Yuji Ando Renesas Electronics Corp. Japan
Csaba Andras-Moritz University of Massachusetts, Amherst United States
Frédéric André Thales Electron Devices France
E.S. Andres Universidad Complutense de Madrid Spain
Joel Andrews Georgia Institute of Technology United States
Francois Andrieu CEA-LETI France
Diing Shenp Ang Nanyang Technological University Singapore
Thomas Anthopoulous Imperial College London United Kingdom
Marina Antoniou University of Cambridge United Kingdom
Thomas Antonsen University of Maryland United States
Jin-Ping Ao University of Tokushima Japan
Joerg Appenzeller Purdue University United States
Raj Apte Palo Alto Reseach Center United States
Mohammad Araghchini Massachusetts Institute of Technology United States
Denis Areshkin ETHZ Switzerland
Seiichi Aritome Hynix Semiconductor Inc. Korea
Carter Armstrong L-3 Communications - Electron Devices Division United States
Martin Arnold ABB Switzerland Ltd Switzerland
Narain Arora Siprosys Inc United States
Antonio Arreghini IMEC Belgium
Asen Asenov University of Glasgow United Kingdom
Shahin J Ashtiani University of Tehran Iran
Vivek Asthana Indian Institute of Technology India
Jayasimha Atulasimha Virginia Commonwealth University United States
Charles Augustine Intel Corporation United States
Chris Auth Intel Corporation United States
Ivan D.  Avramov Bulgarian Academy of Sciences Bulgaria
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Jeff Babcock Texas Instruments Inc. United States
Roman Baburske Infineon Technologies AG Germany
Giorgio Baccarani Universita di Bologna Italy
Mustafa Badaroglu IMEC Belgium
Rock-Hyun Baek POSTECH Korea
In-Gyu Baek Samsung Electronics Co. Ltd Korea
Maryam Baghini Indian Institute of Technology Bombay India
Behraad Bahreyni Simon Fraser University Canada
Ping Bai IHPC, A*STAR Singapore
Alexander Balandin University of California at Riverside United States
B. Jayant Baliga North Carolina State University United States
Monika Balk CST Germany
Adam Balkcum Communications and Power Industries United States
Kaustav Banerjee University of California at Santa Barbara United States
Sanjay Banerjee University of Texas at Austin United States
Kal Banger Cavendish Lab University of Cambridge United States
Mehdi Banihashemi Tarbiat Modares University Iran
Emanuele Baravelli UniversitĂ  di Bologna Italy
Douglas Barlage University of Alberta Canada
Stefano Baroni SISSA Italy
Sylvain Barraud LETI - CEA/GRENOBLE France
Joaquim Barroso National Institute for Space Research Brazil
Ratul Kumar Baruah Indian Institute of Technology Guwahati India
James Basham National Institute of Standards and Technology United States
Thomas Basler Chemnitz University of Technology Germany
Paul Basore Hanwha Solar America United States
Mark Basten Northrop Grumman Corporation United States
Baidyanath Basu College of Engineering & Technology India
Dipanjan Basu Intel Corporation United States
P.K. Basu University of Calcutta India
Burhan Bayraktaroglu Air Force Research Laboratory United States
Can Bayram IBM Corporation United States
Antonios Bazigos Ecole Polytechnique Fédérale de Lausanne Switzerland
Behtash  Behin-Aein GlobalFoundries United States
Hanmant Belgal Intel Corporation United States
Marco Bellini ABB Switzerland Ltd Switzerland
Didier Belot STMicroelectronics France
Brahim Benbakhti Liverpool John Moores University United Kingdom
Vitor Bender Federal University of Santa Maria Brazil
Gennadi Bersuker International Sematech United States
Marc Bescond IM2NP France
Giovanni Betti Beneventi University of Bologna Italy
M. Florian Beug Physikalisch-Technische Bundesantalt Germany
Armel Beunas Thales Electron Devices France
Roberto Bez Micron Technology Italy
K.N. Bhat Indian Institute of Science India
Swapan Bhattacharya Georgia Institute of Technology United States
Sitangshu Bhattacharya Indian Institute of Science India
Swarup Bhunia Case Western Reserve University United States
Krishna Bhuwalka - India
Dieter Bimberg Technische Universität Berlin Germany
Markus Bina Institute for Microelectronics Austria
Dalibor Biolek Centrum Czech Republic
Philip Birtel Thales Group Germany
Davide Bisi University of Padova Italy
Arnab Biswas Ecole Polytechnique Fédérale de Lausanne Switzerland
Abhijit Biswas University of Calcutta India
Monica Blank Communications and Power Industries United States
Bindu Boby SSN College of Engineering India
Heinz Bohlen CPI International Inc. Switzerland
Caroline Bonafos CEMES-CNRS France
Fabrizio Bonani Politecnico di Torino Italy
Mattia Boniardi Micron Semiconductor Italia Italy
John Booske University of Wisconsin-Madison United States
Roger Booth Qualcomm United States
John Borland J.O.B. Technologies United States
Ernst Bosch Thales Electron Devices GmbH Germany
Jan Bosiers Teledyne DALSA BV Netherlands
Gijs Bosman University of Florida United States
Konstantin Bourdelle SOITEC France
Abdelhakim Bourennane LAAS-CNRS France
Anton Bourtsev SSTU Russia
Hartmut Bracht University of MĂĽnster Germany
Vladimir L. Bratman Institute of Applied Physics, Russian Academy of Sciences Russia
Alain Bravaix ISEN-IM2NP France
Ralf Brederlow Texas Insturments Germany
Nicolas Breil IBM Microelectronics Division United States
Barry Brennan University of Texas at Dallas United States
Kevin Brenner Harper United States
Laurent Breuil IMEC Belgium
Jonathan Brodsky Texas Instruments Inc. United States
Herve Brouzes Thales Netherlands Netherlands
David Brown HRL Laboratories United States
Fabian Bufler Synopsys Schweiz GmbH Switzerland
Thuc Bui Calabazas Creek Research Inc United States
Joachim Burghartz Institute for Microelectronics Stuttgart Germany
Geoffrey Burr IBM Almaden Research Center United States
Graeme Burt Lancaster University United Kingdom
Erik Bury IMEC Belgium
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Yong Cai Chinese Aademy of Sciences China
Jin Cai IBM T.J. Watson Research Center United States
Yimao Cai Peking University China
Mario Caironi Italian Institute of Technology Italy
Fernando Calle Universidad Politécnica de Madrid Spain
Vittorio Camarchia Politecnico di Torino Italy
Kristy Campbell Boise State University United States
Jason Campbell National Institute of Standards and Technology United States
Eugenio Cantatore Eindhoven University of Technology Netherlands
Yu (Kevin) Cao Arizona State University United States
Yu Cao Kopin Corp United States
Hongtao Cao Ningbo Institute of Material of Technology & Engineering, CAS China
Shuqing Cao Stanford University United States
Federica Cappelluti Politecnico di Torino Italy
Bruce Carlsten Los Alamos National Laboratory United States
Ed Cartier IBM T. J. Watson Research Center United States
Giorgio Casinovi Georgia Institute of Technology United States
Fritz Caspers CERN Switzerland
Mikael Casse CEA Grenoble France
Stephen Cauffman CPI International Inc. United States
Murat Celik Bogazici University Turkey
Peter Centen Grass Valley Netherlands
Antonio Cerdeira CINVESTAV Mexico
Ahmet Ceyhan Georgia Institute of Technology United States
Kelson Chabak Air Force Research Laboratory United States
Anjan Chakravorty Indian Institute of Technology Madras India
Mansun Chan Hong Kong University of Science and Technology Hong Kong
Lye Hock Kelvin Chan Nanyang Technological University Singapore
Calvin Chan Sandia National Laboratories United States
Winston Chan SRI International United States
MVS Chandrashekhar University of South Carolina United States
Leland Chang IBM T. J. Watson Research Center United States
Hsu-Yu Chang Intel Corporation United States
Yao-Wen Chang Macronix International Co. Ltd. Taiwan
Chip-Hong Chang Nanyang Technological University Singapore
Shoou-Jinn Chang National Cheng Kung University Taiwan
Chia-Hung Chang National Chiao Tung University Taiwan
Ting-Chang Chang National Sun Yat-Sen University Taiwan
Wei-Shun  Chang Rice University United States
Yoon Jung Esther Chang University of California at Los Angeles United States
Adrian Chasin IMEC Belgium
Yogesh Chauhan Indian Institute of Technology India
Chris Chen Altera, Corp. United States
An Chen GlobalFoundries United States
Changqing Chen Huazhong University of Science and Technology China
Shih-Hung Chen IMEC Belgium
Yang-Yin Chen IMEC Belgium
Frederick Chen Industrial Technology Research Institute Taiwan
Wei-Su Chen Industrial Technology Research Institute Taiwan
Yusheng Chen Industrial Technology Research Institute Taiwan
Chih-Ping Chen Macronix International Co. Ltd. Taiwan
Chieh-Fang Chen Macronix International Co. Ltd. Taiwan
Wei-Chen Chen Macronix International Co. Ltd. Taiwan
Chih-Hung Chen McMaster University Canada
Chang-Lee Chen MIT Lincoln Laboratory United States
Jone Chen National Cheng Kung University Taiwan
Ming-Jer Chen National Chiao Tung University Taiwan
Kuan-Neng Chen National Chiao Tung University Taiwan
Hong-Yan Chen Purdue University United States
Jian Chen SanDisk Corp. United States
Jiezhi Chen Toshiba Corporation Japan
David Chen United Microelectronics Corp. Taiwan
Han-Ping Chen University of California at San Diego United States
Wanjun Chen University of Electronic Science and Technology of China China
Xingbi Chen University of Electronic Science and Technology of China China
Kangguo Cheng IBM SRDC United States
Kai Cheng IMEC Belgium
Huiming Cheng Institute of Metal Research China
Chin-Lung Cheng National Formosa University Taiwan
Wood-Hi Cheng National Sun Yat-sen University Taiwan
Tom Cheng RF Micro Devices United States
Kuan Yew Cheong Universiti Sains Malaysia Malaysia
Sergey Cherepko Analog Devices, Inc. United States
Karim Cherkaoui Tyndall National Institute, University College Cork Ireland
David Chernin Science Applications International Corp. United States
Igor Chernyavskiy Naval Research Laboratory United States
(Charles) Kin Cheung National Institute of Standards and Technology United States
Kuang-Hao Chiang MXIC Taiwan
Meng-Hsueh Chiang National Cheng Kung University Taiwan
Te-Kuang Chiang National University of Kaohsiung Taiwan
J.-C Chiao University of Texas at Arlington United States
Wei-Chih Chien Macronix International Co. Ltd. Taiwan
Chao-Hsin Chien National Chiao-Tung University Taiwan
Andrea Chimenton UniversitĂ  degli Studi di Ferrara Italy
Albert Chin National Chiao Tung University Taiwan
Hsien-Chin Chiu Chang Gung University Taiwan
Seongjae Cho Gachon University Korea
Moonju Cho IMEC Belgium
Byung-Jin Cho KAIST Korea
Gyu-Hyeong Cho KAIST Korea
Woo Yeong Cho Samsung Electronics Co. Ltd Korea
Hyung Koun Cho Sungkyunkwan University Korea
Caleb Yu-Sheng Cho TSMC Taiwan
Yong Suk  Cho University of Houston United States
Sri Harsha Choday Purdue University United States
Jong Sun Choi Hongik University Korea
Jin J. Choi Kwangwoon University Korea
Woo Young Choi Sogang University Korea
Sung-Jin Choi University of California at Berkeley United States
Murshed Chowdhury IBM Corporation United States
Philippe Christol Université Montpellier 2 France
Alexander Chroneos Imperial College London United Kingdom
Rongming Chu HRL Laboratories United States
Min Chu Texas Instruments Inc. United States
Daping Chu University of Cambridge United Kingdom
CierSiang Chua Computer Simulation Technology (CST) South East Asia Pte. Ltd. Singapore
Christopher Chua Palo Alto Reseach Center United States
Leon O. Chua University of California at Berkeley United States
Chi On Chui University of California at Los Angeles United States
Jen-Inn Chyi National Central University Taiwan
Kevin Coffey University of Central Florida United States
Matt Cole University of Cambridge United Kingdom
Stephen Collins University of Oxford United Kingdom
James P. Connolly Universidad Politécnica de Valencia Spain
Francesco Conzatti University of Udine Italy
Alan Cook Naval Research Laboratory United States
Simon Cooke Naval Research Laboratory United States
Yvon Cordier CNRS-CRHEA France
Ignacio Cortes Instituto de Microelectronica de Barcelona IMB-CNM (CSIC) Spain
Richard Cousin CST France France
Sorin Cristoloveanu IMEP-MINATEC France
Brian Crone Los Alamos National Lab United States
Adrian Cross University of Strathclyde United Kingdom
Giovanni Crupi University of Messina Italy
Gyorgy Cserey Pázmány Péter Catholic University Hungary
Michael Current Current Scientific United States
Michael Cusick Communications and Power Industries United States
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Amir Dabiran SVTAssociates Inc. United States
Nilay Dağtekin Ecole Polytechnique Fédérale de Lausanne Switzerland
Gilles Dambrine IEMN France
Nattapol Damrongplasit University of California at Berkeley United States
Florian Dams Regensburg University of Applied Sciences Germany
Surya Shankar Dan Indian Institute of Technology Kharagpur India
Bing Dang IBM T. J. Watson Research Center United States
Romain Danneau Karlsruhe Institute of Technology Germany
N. Das University of Calcutta India
Amitava DasGupta Indian Institute of Technology Madras India
Sudeb DasGupta Indian Institute of Technology, Roorkee India
Sandeepan DasGupta Sandia National Laboratories United States
Subrata Datta Microwave Tube Research & Development Centre India
Suman Datta Pennsylvania State University United States
John David University of Sheffield United Kingdom
Jon Davis L-3 Communications Electron Tech. United States
James Dayton Teraphysics Corp. United States
Swapnadip De Meghnad Saha Institute of Technology India
Sergio de la Barrera Carnegie Mellon University United States
Luca De Michielis Ecole Polytechnique Fédérale de Lausanne Switzerland
Carlo De Santi University of Padova Italy
Michelly de Souza Centro Universitario da FEI Brazil
Joeri De Vos IMEC Belgium
Gerald Deboy Infineon Technologies AG Austria
M. Jamal Deen McMaster University Canada
Sylvain Delage Alcatel-Thales III-V Lab France
Damien Deleruyelle Aix-Marseille University France
Dean DeLongchamp National Institute of Standards and Technology United States
Shaozhi Deng Sun Yat-sen University China
Xiaochuan Deng University of Electronic Science and Technology of China China
Shweta Deora Sematech United States
Joff Derluyn EpiGaN Belgium
Hanan Dery University of Rochester United States
Theeradetch Detchprohm Georgia Institute of Technology United States
Yann Deval Universite Bordeaux 1 France
Siddhartha Dhar Technical University of Vienna Austria
Aldo Di Carlo University of Rome "Tor Vergata" Italy
Valerio Di Lecce UniversitĂ  di Bologna Italy
Linten  Dimitri IMEC Belgium
Charalabos Dimitriadis Aristotle University of Thessaloniki Greece
A. Thanasis Dimoulas NCSR Demokritos Greece
Abishek Dixit Indian Institute of Technology, Delhi India
Paul Dodd Sandia National Laboratories United States
Ralf Doerner Ferdinand-Braun-Institut Germany
Philippe Dollfus Universite Paris Sud / CNRS France
Miguel Dominguez University of Texas at Dallas United States
Agnès Dominjon IPNL France
Simona Donati-Guerrieri Politecnico di Torino Italy
Shuxiang Dong Peking University China
Shurong Dong Zhejiang University China
Gerben Doornbos TSMC Belgium
Rodrigo Doria Centro Universitário da FEI Brazil
Mark Downing European Southern Observatory Germany
Jonathan Downing National Institute of Standards and Technology United States
Mircea Dragoman IMT-Bucharest Romania
Francesco Driussi Universita degli Studi di Udine Italy
Pei-Ying Du Macronix International Co. Ltd. Taiwan
Xiangfeng Duan University of California at Los Angeles United States
Juan Duarte University of California at Berkeley United States
Emmanuel Dubois IEMN France
Olgierd  Dumbrajs University of Latvia Latvia
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Gary Eden University of Illinois United States
Heribert Eisele University of Leeds United Kingdom
Karim El-Sayed Synopsys Inc. United States
Al-Moatasem El-Sayed University College London United Kingdom
Mostafa Emam Université Catholique de Louvain Belgium
Kazuhiko Endo AIST Japan
Geert Eneman IMEC Belgium
Roman Engel-Herbert Pennsylvania State University United States
Kamran Entesari Texas A&M University United States
Tobias Erlbacher Fraunhofer IISB Germany
Axel Erlebach Synopsys Inc. Switzerland
Victor Erokhin IPCF-CNR and University of Parma Italy
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Antonio Facchetti Northwestern University United States
Georgios Fagas University College Cork Ireland
Tzu-Ning Fang Spansion Inc. United States
Tian Fang University of Notre Dame United States
Andrea Fantini IMEC Belgium
Lorenzo Faraone University of Western Australia Australia
Farzan Farbiz Texas Instruments Inc. United States
John Faricelli Advanced Micro Devices Inc. United States
Mohammad-Reza Fathollahi K. N. Toosi University of Technology Iran
Marc Faucher IEMN France
Patrick Fay University of Notre Dame United States
Pierre Fazan Micron Technology Belgium Belgium
Xavier Federspiel STMicroelectronics France
Alexey Fedotov Institute of Applied Physics Russian Academy of Sciences Russia
Wang Feihu Intermolecular, Inc. United States
Kevin Felch Communications and Power Industries United States
Jinjun Feng Beijing Vacuum Electronics Research Institute China
Philip Feng Case Western Reserve University United States
Yuxia Feng Institute of Semiconductors, Chinese Academy of Sciences China
Milton Feng University of Illinois at Urbana-Champaign United States
Isabelle Ferain GlobalFoundries United States
Veronique Ferlet-Cavrois ESA ESTEC Netherlands
Tomas Fernandez University of Cantabria Spain
Montserrat Fernández-Bolanos Ecole Polytechnique Fédérale de Lausanne Switzerland
Alessandro Ferri Fondazione Bruno Kessler Italy
Joseph Feser University of Delaware United States
Gianluca Fiori University of Pisa Italy
Massimo Fischetti University of Texas at Dallas United States
Tor Fjeldly Norwegian University of Science and Technology Norway
Donis Flagello Nikon United States
Denis Flandre Université Catholique de Louvain Belgium
Dan Fleetwood Vanderbilt University United States
David Flores IMB-CNM (CSIC) Spain
Monica Florescu Transilvania University of Brasov Romania
Xuanyao Fong Purdue University United States
Guglielmo Fortunato IMM-CNR Italy
David Frank IBM T. J. Watson Research Center United States
Aaron Franklin Duke University United States
William Frensley University of Texas at Dallas United States
Eby Friedman University of Rochester United States
Junxue Fu Hong Kong Baptist University Hong Kong
Canek Fuentes-Hernandez Georgia Institute of Technology United States
Junki Fujii Nara Institute of Science and Technology Japan
Shosuke Fujii Toshiba Corporation Japan
Yoshihide Fujisaki NHK Science and Technical Research Lab Japan
Mikhail Fuks University of New Mexico United States
Koichi Fukuda AIST Japan
Kenjiro Fukuda Yamagata University Japan
Yoshiaki Fukuzumi Toshiba Corporation Japan
Tuyoshi Funaki Osaka University Japan
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Georg Gaertner Philips Research Germany
Md Gaffar Purdue University United States
Rohit Galatage GlobalFoundries United States
Anatoly Galdetskiy FSUE Istok, Moscow Russia
Richard Gale Texas Tech University United States
Kenneth Galloway Vanderbilt University United States
Jeff Gambino IBM Microelectronics Division United States
Francisco Gamiz Universidad de Granada Spain
Diana Gamzina University of California at Davis United States
Swaroop Ganguly Indian Institute of Technology Bombay India
Jianjun Gao East China Normal University China
Feng Gao Massachusetts Institute of Technology United States
Yunfei Gao Purdue University United States
Haiyong Gao University of Connecticut United States
Francisco Garcia Sanchez Universidad Simon Bolivar Venezuela
Jan Gaudestad Neocera, Inc. United States
Alexandros Georgakilas FORTH Greece
Andrea Ghetti Micron Semiconductor Italia Italy
GĂ©rard Ghibaudo IMEP-LAHC France
Gabriella Ghidini STMicroelectronics Italy
Arindam Ghosh Indian Institute of Science India
Noel Giebink Pennsylvania State University United States
Martin Gijs Ecole Polytechnique Fédérale de Lausanne Switzerland
Martin Giles Intel Corporation United States
Benito Gimeno University of Valencia Spain
Naum Ginzburg Institute of Applied Physics Russian Academy of Sciences Russia
Ulrich Glaser Infineon Technologies AG Germany
Mikhail Yu. Glyavin Institute of Applied Physics, Russian Academy of Sciences Russia
Bruce Gnade University of Texas at Dallas United States
Elena Gnani Universita di Bologna Italy
Antonio Gnudi University of Bologna Italy
Michele Goano Politecnico di Torino Italy
Dan Goebel Jet Propulsion Lab. United States
Ashish Goel Broadcom Corporation United States
Henrique Gomes Univerity of the Algarve Portugal
Tomas Gonzalez Universidad de Salamanca Spain
Benito Gonzalez Perez Universidad de Las Palmas de Gran Canaria Spain
Fernando González-Posada CEA- CNRS France
Jung-Suk Goo GlobalFoundries United States
Stephen Goodnick Arizona State University United States
Chakravarthy Gopalan Adesto Technologies United States
Harald Gossner Intel Corporation Germany
Bernd Gotsmann IBM Research GmbH Switzerland
Ludovic Goux IMEC Belgium
Bogdan Govoreanu IMEC Belgium
Nitin Goyal CTR Carinthian Tech Research AG Austria
Wladyslaw Grabinski Freescale Semiconductor Inc. United States
Ralf Granzner Technische Universität Ilmenau Germany
Tibor Grasser Technical University of Vienna Austria
Roberto Grassi University of Bologna Italy
Michael Green Varian Medical Systems United States
Geoffrey Greening University of Michigan United States
Guido Groeseneken IMEC- KU Leuven Belgium
Daniel Grogg TE Connectivity Solutions GmbH Switzerland
Wilhelmus Groot Pixtronix, a Qualcomm Company United States
Viktor Gruev Washington University United States
Jiangjiang Gu Intel Corporation United States
Ximeng Guan IBM Corporation United States
Mathieu Guerin IM2NP France
Marco Guglielmi European Space Agency France
Suresh Gundapaneni IBM India Pvt. Ltd. India
Wei Guo IMEC Belgium
Jyh-Chyurn Guo National Chiao Tung University Taiwan
Xiaojun Guo Shanghai Jiao Tong University China
Jing Guo University of Florida United States
L. Jay Guo University of Michigan United States
Radhey Gupta Maharaja Agrasen Institute of Technology India
Sumeet Gupta Purdue University United States
Dipti Gupta Seoul National University Korea
Suyog Gupta Stanford University United States
Mridula Gupta University of Delhi India
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Tae-Jun Ha University of Texas at Austin United States
Omid Habibpour Chalmers University of Technology Sweden
Jean-Jacques Hajjar Analog Devices, Inc. United States
Mohammad Hakim University of Southampton United Kingdom
Steve Hall University of Liverpool United Kingdom
Behrang Hamadani National Institute of Standards and Technology United States
Genquan Han Chongqing University China
Shu-Jen Han IBM T.J. Watson Research Center United States
Seong-Tae Han Korea Electrotechnology Research Institute Korea
Jin-Woo Han NASA Ames Research Center United States
Sang Youn Han Samsung Electronics Korea
Zhili Hao Old Dominion University United States
Yue Hao Xidian University China
Naoki Harada National Institute of Advanced Industrial Science and Technology Japan
MD. Tanvir Hasan University of Fukui Japan
Hideki Hasegawa Hokkaido University Japan
Pouya Hashemi IBM Corporation United States
Alkiviadis Hatzopoulos Aristotle University of Thessaloniki Greece
Majeed Hayat University of New Mexico United States
Jin He Peking University China
Dawei Heh TSMC Taiwan
Thomas Heine Jacobs University Bremen Germany
Bahman Hekmatshoar IBM T.J. Watson Research Center United States
Eric Heller Air Force Research Laboratory United States
Geert Hellings Katholieke Universiteit Leuven Belgium
Heino Henke Technische Universität Berlin Germany
Gregory Herman Oregon State University United States
Oliver Hilt FBH Berlin Germany
Christopher Hinkle University of Texas at Dallas United States
Toshiro Hiramoto University of Tokyo Japan
Tahara Hirokazu Osaka Institute of Technology Japan
Digh Hisamoto Hitachi Ltd. Japan
Hans Hjelmgren Chalmers University of Technology Sweden
ChiaHua Ho National Nano device Laboratories Taiwan
Chih-Hsiang Ho Purdue University United States
Brad Hoff Air Force Research Laboratory United States
Jean-Philippe Hogge Ecole Polytechnique Fédérale de Lausanne Switzerland
Terence Hook IBM Corporation United States
David Hopkins Oracle Corporation United States
Naoto Horiguchi IMEC Belgium
Hideki Horii Samsung Electronics Co. Ltd Korea
Susumu Horita Japan Advanced Institute of Science and Technology Japan
Gilles Horowitz LPICM, Ecole Polytechnique, CNRS France
Peter Horoyski Communications and Power Industries Canada
David Horsley University of California at Davis United States
Shu Hotta Kyoto Institute of Technology Japan
Tuo-Hung Hou National Chiao Tung University Taiwan
Michel Houssa Katholieke Universiteit Leuven Belgium
Phil Hower Texas Instruments Inc. United States
Judy Hoyt Massachusetts Institute of Technology United States
Yi-Hsuan Hsiao Macronix International Co. Ltd. Taiwan
Tzu-Hsuan (Bruce) Hsu Macronix International Co. Ltd. Taiwan
Shawn Hsu National Tsing Hua University Taiwan
Meng-Ting Hsu National Yunlin University of Science & Technology Taiwan
Chih-Wei Hu Macronix International Co. Ltd. Taiwan
Gujin Hu Shanghai Institute of Technical Physics of the Chinese Academy of Sciences China
Chenming Hu University of California at Berkeley United States
Zongyang Hu University of Notre Dame United States
Sen Huang Hong Kong University of Science and Technology Hong Kong
Qianqian Huang Institute of Microelectronics, Peking University China
Chih-Fang Huang National Tsing Hua University Taiwan
Huolin Huang National University of Singapore Singapore
Tsung-Ching Huang TSMC United States
Mengbing Huang University at Albany, SUNY United States
Raymond Hueting University of Twente Netherlands
Brett Hull Cree Inc United States
Ivo Hummelgen Universidade Federal do Parana Brazil
Yijie Huo Stanford University United States
Muhammad Husain University of Southampton United Kingdom
Hanipah Hussin Universiti Teknologi Mara Malaysia
Zoltan Huszka Ams AG Austria
Louis Hutin University of California at Berkeley United States
Chi-Sun Hwang ETRI Korea
Myeong-Eun Hwang Intel Corporation United States
Wan Sik Hwang Korea Aerospace University Korea
Hyunsang Hwang Pohang University of Science and Technology Korea
Injun Hwang Samsung Electronics Korea
Cheol Seong Hwang Seoul National University Korea
Jenn-Gwo Hwu National Taiwan University Taiwan
Jaroslav Hynecek ISETEX Inc. United States
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Giuseppe Iannaccone UniversitĂ  di Pisa Italy
Daniele Ielmini Politecnico di Milano Italy
Norio Iizuka Toshiba Corporation Japan
Hiroyuki Ikeda Sony Corporation Japan
Stefan Illy Karlsruhe Institute of Technology Germany
Seongil Im Yonsei University Korea
Benjamin Iñiguez Universitat Rovira i Virgili Spain
Dimitris Ioannou George Mason University United States
Toshifumi Irisawa MIRAI-ASET Japan
Masahiro Ishida Panasonic Corporation Japan
Syed Islam University of Tennessee United States
Ahmad Islam Wright-Patterson Air Force Base United States
Kazuhiro Ito Osaka University Japan
Hiroyuki Ito Tokyo Institute of Technology Japan
R. Lawrence Ives Calabazas Creek Research Inc United States
Takayuki Iwasaki Tokyo Institute of Technology Japan
Afshin Izadian Purdue School of Engineering and Technology United States
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Robert Jackson Calabazas Creek Research Inc. United States
Warren Jackson HP Labs United States
Arne Jacob Technische Universität Hamburg-Harburg Germany
Ryan Jacobs University of Wisconsin-Madison United States
Ankit Jain Purdue University United States
Manu Jaiswal Centre for Biomedical Engineering United States
Mansoor Jalil National University of Singapore Singapore
Chia Jan Intel Corporation United States
Meir Janai Saifun Semiconductors Israel
Nicholas Jankowski U.S. Army Research Laboratory United States
Farzan Jazaeri Ecole Polytechnique Fédérale de Lausanne Switzerland
Andrzej Jelenski Institute of Electronic Materials Technology Poland
John Jelonnek Karlsruhe Institute of Technology Germany
Debdeep Jena University of Notre Dame United States
Erk Jensen CERN Switzerland
Kevin Jensen Naval Research Laboratory United States
Aaron Jensen SLAC National Accelerator Center United States
Jae-Hong Jeon Korea Aerospace University Korea
Sanghun Jeon Korea University Korea
Youngin Jeon Korea University Korea
Jaewook Jeong Daegu Gyeongbuk Institute of Science & Technology Korea
Jae Kyeong Jeong Inha University Korea
Dae-Eun Jeong Samsung Electronics Co., Ltd. Korea
Rakesh Gnanadavid Jeyasingh Stanford University United States
Rashmi Jha University of Toledo United States
Ritesh Jhaveri Intel Corporation United States
Zhigang Ji Liverpool John Moores University United Kingdom
Anquan Jiang Fudan University China
Jie Jiang Nanyang Technological University Singapore
Chunsheng Jiang Tsinghua University China
David Jiménez Universitat Autònoma de Barcelona Spain
Juan Jimenez Tejada Universidad de Granada Spain
Jidong Jin University of Manchester United Kingdom
Seonghoon Jin University of Massachusetts, Amherst United States
Li Jiun-Yun National Taiwan University Taiwan
Yogesh Joglekar IUPUI United States
Jungwoo Joh Texas Instruments Inc. United States
Tom Johansen Technical University of Denmark Denmark
Jonny Johansson LuleĂĄ University of Technology Sweden
Jeffrey Johnson IBM Corporation United States
Nick Jordan University of Michigan United States
Dileepan Joseph University of Alberta Canada
Lalit M Joshi CEERI, Pilani India
Emmanuel Josse STMicroelectronics France
Colin Joye Naval Research Laboratory United States
Byunghoo Jung Purdue University United States
Malgorzata Jurczak IMEC Belgium
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M. Zahangir Kabir Concordia University Canada
Korhan Kaftanoglu Arizona State University United States
Takao Kageyama Kyushu Institute of Technology Japan
Golap Kalita Nagoya Institute of Technology Japan
Karol Kalna Swansea University United Kingdom
Deepak Kamalanathan Adesto Technologies United States
Toshio Kamiya Tokyo Institute of Technology Japan
Yukihiro Kaneko Panasonic Corporation Japan
Dong-Woo Kang ETRI Korea
In Man Kang Kyungpook National University Korea
Jinfeng Kang Peking University China
Chang Yong Kang Sematech United States
Kuo-Hsing Kao National Chiao Tung University Taiwan
Ashok Kapoor APIC Corp United States
Golnaz Karbasian University of Notre Dame United States
Ilya Karpov Intel Corporation United States
Ryota Katsumata Toshiba Corporation Japan
Sato Katsumi Mitsubishi Electric Corporation Power Device Works Japan
Howard Katz John Hopkins University United States
Thomas Kauerauf IMEC Belgium
Hiroshi Kawaguchi Kobe University Japan
Yusuke Kawaguchi Toshiba Corporation Japan
Savas Kaya Ohio University United States
Thorsten Kayser Karlsruhe Institute of Technology Germany
Thomas Kazior Raytheon RF Components United States
Jakub Kedzierski Massachusetts Institute of Technology United States
Robert Kelsall University of Leeds United Kingdom
Heiko Kempa - Germany
Ming-Dou Ker National Chiao-Tung University Taiwan
Andreas Kerber GlobalFoundries United States
Vishal Kesari Microwave Tube Research & Development Centre India
Ali Khakifirooz Spansion Inc. United States
Pedram Khalili Amiri University of California at Los Angeles United States
Asif Khan University of California at Berkeley United States
Yasser Khan University of California at Berkeley United States
Sourabh Khandelwal Norwegian University of Science and Technology Norway
Mohammad Khayer Intel Corporation United States
Bahman Kheradmand-Boroujeni Technische Universität Dresden Germany
Alexander  Khitun University of California at Riverside United States
Sung-O Kim Clemson University United States
SangBum Kim IBM T. J. Watson Research Center United States
Raseong Kim Intel Corporation United States
Sungho Kim KAIST Korea
Dong Myong Kim Kookmin University Korea
Chang-Hyun Kim LPICM, Ecole Polytechnique, CNRS France
Taehoon Kim Micron Technology United States
SungGeun Kim Purdue University United States
Soo Youn Kim Qualcomm Technologies Inc. United States
Jiyoung Kim Samsung Electronics Korea
Dong-Won Kim Samsung Electronics Korea
Binn Kim Seoul National University Korea
SoYoung Kim Sungkyunkwan University Korea
Sanghyeon Kim University of Tokyo Japan
Hyun Jae Kim Yonsei University Korea
Tsunenobu Kimoto Kyoto University Japan
Mutsumi Kimura Ryukoku University Japan
Ya-Chin King National Tsing Hwa University Taiwan
Dan Kinzer Fairchild Semiconductor United States
Hagen Klauk Max Planck Institute for Solid State Research Germany
Gerhard Klimeck Purdue University United States
Alexander Kloes Technische Hochschule Mittelhessen Germany
Wolfram Knapp Otto-von-Guericke-Universitat-Magdeburg Germany
Irena Knezevic University of Wisconsin-Madison United States
Maris Knite Riga Technical University Latvia
Sang-Hee Ko Park Electronics & Telecommunications Research Institute Korea
Kenya Kobayashi Toshiba Corporation Japan
Martin Koch Phillips-Universitat Marburg Germany
Tsuyoshi Kodama Fujitsu Semiconductor Japan
Goutam Koley University of South Carolina United States
Rama Komaragiri National Institute of Technology Calicut India
Ivan Konoplev University of Oxford United Kingdom
Bonwon Koo Samsung Advanced Institute of Technology Korea
Hans Koops HaWilKo GmbH Germany
Martin Kordesch Ohio University United States
Guenter Kornfeld Kornfeld Plasma & Microwave Consulting Germany
Carol Kory Analex Corporation/NASA United States
Hans Kosina Technical University of Vienna Austria
Murali Kota IBM Corporation India
Roza Kotlyar Intel Corporation United States
Anil Kottantharayil Indian Institute of Technology Bombay India
Alexei Koudymov RSM Electron Power United States
Dimitrios Kouvatsos NCSR Demokritos Greece
Nikolay Koval Tomsk State University Russia
Michael Kozicki Arizona State University United States
Abhinav Kranti Indian Institute of Technology, Indore India
Franz Kreupl Technische Universität Munchen Germany
Zoran Krivokapic Advanced Micro Devices Inc. United States
Ilya Krivorotov University of California at Irvine United States
Cliff M. Krowne Naval Research Laboratory United States
Christophe D. Krzeminski Institute of Microengineering and Nanoelectronics France
Martin Kuball University of Bristol United Kingdom
Tillmann Kubis Purdue University United States
Kelin Kuhn Intel Corporation United States
Jaydeep Kulkarni Intel Corporation United States
Sona Kumar Delhi UNiversity India
Vachan Kumar Georgia Institute of Technology United States
Arunandan Kumar National Physical Laboratory India
Amit Kumta GlobalFoundries United States
Chao-Wei Kuo eMemory Technology Inc. Taiwan
Cheng Kuo National Chiao Tung University Taiwan
James Kuo National Taiwan University Taiwan
Rihito Kuroda Tohoku University Japan
Heinrich Kurz RWTH Aachen University Germany
Jan Kuzmik Slovak Academy of Sciences Slovakia
Masaaki Kuzuhara University of Fukui Japan
Duygu Kuzum Stanford University United States
Shahar Kvatinsky Technion - Israel Institute of Technology Israel
Hoi-Sing Kwok Hong Kong University of Science and Technology Hong Kong
Oh-Kyong Kwon Hanyang University Korea
Kee-Won Kwon Sungkyunkwan University Korea
Jang-Yeon Kwon Yonsei University Korea
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Giuseppe La Rosa IBM Microelectronics Division United States
Neal Lafferty IBM Corporation United States
Erh-Kun Lai Macronix International Co. Ltd. Taiwan
Sheng-Chih Lai Macronix International Co. Ltd. Taiwan
Peter Lai University of Hong Kong Hong Kong
Christophe Lallement Université de Strasbourg, Parc d’innovation France
Wen-How Lan National University of Kaohsiung Taiwan
Adriana Lapadatu Sensonor Norway
Luca Larcher UniversitĂ  di Modena e Reggio Emilia Italy
Farhad Larki Institute of Microengineering and Nanoelectronics Malaysia
Livio Lattanzio Ecole Polytechnique Fédérale de Lausanne Switzerland
Stefan Lauxtermann Sensor Creations United States
Simone Lavizzari Micron Italy
John Lawless Redwood Scientific, Inc. United States
Jean-Pierre Leburton University of Illinois at Urbana-Champaign United States
Byoung Hun Lee Gwangju Instititue of Science and Technology Korea
Daeseok Lee Gwangju Institute of Science and Technology Korea
Seho Lee Hynix Semiconductor Inc. Korea
Hengyuan Lee Industrial Technology Research Institute Taiwan
Seung-Woo Lee Kyung Hee University Korea
Jung-Hee Lee Kyungpook National University Korea
Yong Soo Lee Kyungpook National University Korea
Chih-Wei Lee Macronix International Co. Ltd. Taiwan
Dai-Ying Lee Macronix International Co. Ltd. Taiwan
Feng-Ming Lee Macronix International Co. Ltd. Taiwan
Lou Lee Macronix International Co. Ltd. Taiwan
Ching-Ting Lee National Cheng Kung University Taiwan
Chengkuo Lee National University of Singapore Singapore
KwangWoo Lee Samsung Electronics Co. Ltd Korea
Sung-chul Lee Samsung Electronics Co. Ltd Korea
Sung-Sam Lee Samsung Electronics Co. Ltd Korea
Tae-Yon Lee Samsung Electronics Co. Ltd Korea
Chang-Hyun Lee Samsung Electronics Co. Ltd Korea
Jae-Duk Lee Samsung Electronics Co. Ltd Korea
Jae-Kyu Lee Samsung Electronics Co. Ltd Korea
Rinus Lee Sematech United States
Jong-Ho Lee Seoul National University Korea
Sin-Doo Lee Seoul National University Korea
Shiuh-Wuu Lee SMIC China
Ho-Nyeon Lee Soonchunhyang University Korea
Hojin Lee Soongsil University Korea
Kangwook Lee Tohoku University Japan
Chiwoo Lee Tyndall National Institute Ireland
Chin Lee University of California at Irvine United States
Jack Lee University of Texas at Austin United States
Steffen Lehmann Technische Universität Dresden Germany
Torsten Lehmann University of New South Wales Australia
Wei Lei Southeast University China
Patrick Lenahan Pennsylvania State University United States
Junjie Li Chinese Academy of Sciences China
Baikui Li Hong Kong University of Science and Technology Hong Kong
Hongmei Li IBM Corporation United States
Baozhen Li IBM Corporation United States
Ming Li Institute of Microelectronics China
Yuanyuan Li Intel Corporation United States
Yiming Li National Chiao Tung University Taiwan
Rui Li Qualcomm Technologies Inc. United States
Jing Li Texas Tech University United States
Bin Li University of Electronic Science and Technology of China China
Zhaoji Li University of Electronic Science and Technology of China China
Guowang Li University of Notre Dame United States
Qingqing Liang Maxlinear, Inc. United States
Yung Liang National University of Singapore Singapore
Gengchiau Liang National University of Singapore Singapore
Dong Liang University of Wisconsin-Madison United States
Huailin Liao Peking University China
E. B. Liao TSMC Taiwan
Celine Lichtensteiger University of Geneva Switzerland
Sung Kyu Lim Georgia Institute of Technology United States
Hanjin Lim Samsung Electronics Co., Ltd. Korea
Dennis Lin IMEC Belgium
Yu-Yu Lin Macronix International Co. Ltd. Taiwan
Chih-Lung Lin National Cheng Kung University Taiwan
Horng-Chih Lin National Chiao Tung University Taiwan
Chien-Chung Lin National Chiao-Tung University Taiwan
Po-Hsieh Lin National Sun Yat-Sen University Taiwan
Chun-Yu Lin National Taiwan Normal University Taiwan
Tai Yuan Lin National Taiwan Ocean University Taiwan
Chrong-Jung Lin National Tsing Hua University Taiwan
Jianqiang Lin National University of Singapore Singapore
Jui-Yen Lin Stanford University United States
Ming-Chieh Lin Tech-X United States
Jingyu Lin Texas Tech University United States
Erik Lind Lund University Sweden
Stefan Linder ABB Switzerland Ltd Switzerland
Chris Lingwood Lancaster University United Kingdom
Juin Liou University of Central Florida United States
Yongxun Liu AIST Japan
Hongyu Liu CNT-TFT United States
Zuoguang Liu IBM Corporation United States
Ming Liu Institute of Microelectronics, Chinese Academy of Sciences China
William Liu Maxim Integrated United States
K. W. Liu National Cheng Kung University Taiwan
Po-Tsun Liu National Chiao Tung University Taiwan
Keng-Ming Liu National Dong Hwa University Taiwan
Chi-Wee Liu National Taiwan University Taiwan
Gang Liu Ningbo Institute of Material of Technology & Engineering, CAS China
Lifeng Liu Peking University China
Xiaoyan Liu Peking University China
Lilin Liu Sun Yat-Sen University China
Yang Liu Sun Yat-sen University China
Tsu-Jae Liu University of California at Berkeley United States
Tingyi Liu University of California at Los Angeles United States
Guanxiong Liu University of California at Riverside United States
Zhiwei Liu University of Central Florida United States
Tong Liu Virginia Polytechnic Institute and State University United States
James Lloyd SUNY Albany United States
Roger Lo Macronix International Co. Ltd. Taiwan
Yu-Hwa Lo University of California at San Diego United States
Saurabh Lodha Indian Institute of Technology Bombay India
Wei-Yip Loh International Sematech United States
Salvatore Lombardo CNR-IMM Italy
Wen-Shiung Lour National Taiwan Ocean University Taiwan
Zhichao Lu GlobalFoundries United States
Tao-Cheng Lu Macronix International Co. Ltd. Taiwan
Bin Lu Massachusetts Institute of Technology United States
Hai Lu Nanjing University China
Wu Lu Ohio State University United States
Peng Lu University of California at Los Angeles United States
Wei Lu University of Michigan United States
Larry Ludeking Mission Research Corp. United States
Mathieu Luisier ETH Zurich Switzerland
Konstantin Lukin Institute for Radiophysics and Electronics Ukraine
Leda Lunardi North Carolina State University United States
Wsevolod Lundin Ioffe Physicotechnical Institute Russia
Mark Lundstrom Purdue University United States
Xiao Rong Luo University of Electronic Science and Technology of China China
Grzegorz Lupina IHP Germany
Donald Lupo Tampere University of Technology Finland
Hangbing Lv Institute of Microelectronics, Chinese Academy of Sciences China
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Zhenqiang (Jack) Ma University of Wisconsin-Madison United States
Anuj Madan RampliFi United States
Tatsuro Maeda National Institute of Advanced Industrial Science and Technology Japan
Koichi Maezawa University of Toyama Japan
Peter Magnee NXP Semiconductors Netherlands
Paolo Magnone University of Bologna Italy
Ravi  Mahajan Intel Corporation United States
Vinayak Mahajan University of Louisiana, Lafayette United States
Santanu Mahapatra Indian Institute of Science India
Souvik Mahapatra Indian Institute of Technology Bombay India
Iqbal Mahmud University of Texas at Arlington United States
Chinmay Maiti India Institute of Technology India
Kausik Majumdar Sematech United States
George Malliaras Ecole Nationale Supérieure des Mines de Saint Etienne France
Abhijit Mallik University of Calcutta India
B. Gunnar Malm KTH Royal Institute of Technology Sweden
V. S. Mandapati Indian Institute of Technology Bombay India
Sanjeev Manhas Indian Institute of Technology Roorkee India
Harish Manohara JPL - NASA United States
Siegfried Mantl Forschungszentrum Julich GmbH Germany
Duo Mao Micron Technology, Inc United States
Denis Marcon IMEC Belgium
Matthew Marinella Sandia National Laboratories United States
Ognian Marinov McMaster University Canada
Stanislav Markov University of Hong Kong Hong Kong
Koen Martens IMEC Belgium
Russell Martin L-3 Electron Technologies, Inc. United States
Antonio Martinez Swansea University United Kingdom
Javier Martin-Martinez Universitat Autonoma de Barcelona Spain
Rodrigo Martins New University of Lisbon Portugal
Meishoku Masahara National Institute of Advanced Industrial Science and Technology Japan
Witek Maszara Advanced Micro Devices Inc. United States
Javier Mateos Universidad de Salamanca Spain
Thomas Mathis ETH Zurich Switzerland
Takashi Matsukawa AIST Japan
Hans Juergen Mattausch Hiroshima University Japan
Philip Mawby University of Warwick United Kingdom
Colin McAndrew Freescale Semiconductor Inc. United States
Mitchell McCarthy University of Florida United States
Daniel  McGrath Aptina Imaging United States
Lisa McIlrath R3Logic, Inc. United States
Keith McIntosh PV Lighthouse Australia
William McMahon GlobalFoundries United States
Farid Medjdoub I.E.M.N - CSAM France
Saumitra Mehrotra Purdue University United States
Bernd Meinerzhagen TU Braunschweig Germany
Gaudenzio Meneghesso Universita di Padova Italy
Matteo Meneghini University of Padova Italy
Roberto Menozzi University of Parma Italy
Stephan Menzel Forschungszentrum Julich GmbH Germany
Abdelkarim Mercha IMEC Belgium
Inanc Meric Columbia University United States
Farnood Merrikh-Bayat University of California at Santa Barbara United States
Xiangshui Miao Huazhong University of Science and Technology China
Carmine Miccoli Politecnico di Milano Italy
Loukas Michalas University of Athens Greece
Slobodan Mijalkovic Silvaco Europe United Kingdom
Hiroshi Miki Hitachi Ltd. Japan
Thomas Mikolajick TU Bergakademie Freiberg Germany
Liviu Militaru INSA Lyon France
José Millán CNM-CSIC Spain
Campbell Millar University of Glasgow United Kingdom
William Milne University of Cambridge United Kingdom
Hidenori Mimura Shizuoka University Japan
Bigang Min Edge Tech Corp United States
Mauro Mineo Lancaster University United Kingdom
Enrique Miranda Universitat Autònoma de Barcelona Spain
Durga Misra New Jersey Institute of Technology United States
Mohamed Missous University of Manchester United Kingdom
Yuichiro Mitani Toshiba Corporation Japan
Daniel Mittleman Rice University United States
Mitiko Miura-Mattausch Hiroshima University Japan
Yasuyuki Miyamoto Tokyo Institute of Technology Japan
Tomoyuki Miyoshi Hitachi Ltd. Japan
Bunji Mizuno Panasonic Corporation Japan
Kazuhiro Mochizuki Central Research Laboratory, Hitachi, Ltd. Japan
Roberto Modica STMicroelectronics Italy
Kurt Moen TowerJazz United States
Peter Moens ON Semiconductor Belgium
Mohamed Mohamed University of Illinois at Urbana-Champaign United States
Nihar Mohapatra Indian Institute of Technology, Gandhinagar India
Dheeraj Mohata RF Micro Devices United States
Scott Monaghan Tyndall National Institute Ireland
Udit Monga Intel Mobile Communications Germany
Miguel Montes Bajo University of Bristol United Kingdom
Carlos Galup Montoro Federal University of Santa Catarina Brazil
Christian Monzio Compagnoni Politecnico di Milano Italy
Saurabh Mookerjea Intel Corporation United States
Jeong Moon HRL Laboratories, LLC United States
Yi-Shien Mor TSMC Taiwan
Nobuya Mori Osaka University Japan
Yukinori Morita AIST Japan
Narihiro Morosawa Sony Corporation Japan
Victor Moroz Synopsys Inc. United States
Despina Moschou NCSR Demokritos Greece
Kirsten Moselund IBM Research GmBH Switzerland
Vincent Mosser ITRON SAS France
Chandra Mouli Micron Technology Inc. United States
Niloy Mukherjee Intel Corporation United States
Saibal Mukhopadhyay Georgia Institute of Technology United States
Niko MĂĽnzenrieder ETH ZĂĽrich Switzerland
Matthias Muoth ETH ZĂĽrich Switzerland
Pierre R. Muret CNRS France France
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Ebrahim Nadimi TU Chemnitz Germany
Masanori Nagase National Institute of Advanced Industrial Science and Technology Japan
Deleep Nair Indian Institute of Technology Madras India
Yutaka Nakamura IBM Japan Japan
Shuji Nakamura University of California at Santa Barbara United States
Wlodzimierz Nakwaski Lodz University of Technology Poland
Lis Nanver Delft University of Technology Netherlands
Federico Nardi Politecnico di Milano Italy
Digbijoy Nath Ohio State University United States
Masanori Natsui Tohoku University Japan
Gabriele Navarro CEA LETI MINATEC France
Dondee Navarro Silvaco Japan Japan
Kaushik Nayak Indian Institute of Technology Bombay India
Hasan Nayfeh IBM Corporation United States
Vasile Bogdan Neculaes GE Global Research United States
Mihail Nedjalkov Technical University of Vienna Austria
Dieter Neher Fraunhofer Institute for Applied Polymer Research Germany
Jeff Neilson SLAC National Accelerator Laboratory United States
Michael Nelhiebel Infineon Technologies Austria Austria
Neophytos Neophytou Technical University of Vienna Austria
Philip Neudeck NASA United States
Leonid Neyman IXYS Corporation United States
Geok Ing Ng Nanyang Technological University Singapore
Tse Nga Ng Palo Alto Research Center United States
Wai Tung Ng University of Toronto Canada
Khanh Nguyen Beam-Wave Research, Inc. United States
Viet Hung Nguyen Institute of Physics Viet Nam
Paul Nicollian Texas Instruments Inc. United States
Franz-Josef Niedernostheide Infineon Technologies AG Germany
Michael Niemier University of Notre Dame United States
Denis Nika Moldova State University Moldova
Alexey Nikolaev Institution of High Current Electronics Russia
Tak Ning IBM Corporation United States
Takeki Ninomiya Panasonic Corporation Japan
Roberta Nipoti CNR Italy
Yann-Michel Niquet CEA  Institute for Nanosciences and Cryogenics France
Yu Nishitani Panasonic Corporation Japan
Tetsuya Nitta Renesas Technology Corp. Japan
Kenji Nomura Tokyo Institute of Technology Japan
Akihiro Noriki Tohoku University Japan
Nenad Novkovski Saints Cyril and Methodius University of Skopje Macedonia
Edward Nowak IBM Corporation United States
Matt Nowak Qualcomm United States
Gregory Nusinovich University of Maryland United States
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Nixon O Dalsa, Inc. Canada
Anthony Oates TSMC Taiwan
Hirosato Ochimizu Fujitsu Semiconductor Japan
Brendan O'Connor North Carolina State University United States
Michael Oehme Institute of Semiconductor Engineering, University of Stuttgart Germany
Ennis Ogawa Broadcom Corporation United States
Akiko Ohata Osaka City University Japan
Tatsuya Ohguro Toshiba Corporation Japan
Hiromichi Ohta Hokkaido University Japan
Kenji Okada Matsushita Electric Industrial Co.Ltd. Japan
Aaron Oki Northrop Grumman Space Technology United States
Chukwudi Okoro National Institute of Standards and Technology United States
Ali Okyay Bilkent University Turkey
Phil Oldiges IBM Corporation United States
Sarah Olsen Newcastle University United Kingdom
Yasuhisa Omura Kansai University Japan
Gregory Onushkin Philips Lighting Netherlands
Marius Orlowski Virginia Tech United States
Adelmo Ortiz-Conde Universidad Simon Bolivar Venezuela
Sylvie Ortolland STMicroelectronics France
Tim Osedach - United States
Aminy Ostfeld University of California at Berkeley United States
Hiroyuki Ota National Institute of Advanced Industrial Science and Technology Japan
Sasan Otroj Shahrekord University Iran
Taiichi Otsuji Tohoku University Japan
Nepomuk Otte Georgia Institute of Technology United States
Shinichi O'uchi AIST Japan
Yijian Ouyang Maxim Integrated United States
Mihri Ozkan University of California at Riverside United States
Mehmet Ozturk North Carolina State University United States
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Alvaro Padilla IBM Corporation United States
Andrea Padovani UniversitĂ  di Modena e Reggio Emilia Italy
Sangwoo Pae Samsung Electronics Co. Ltd Korea
Ioannis Pagonakis Karlsruhe Institute of Technology Germany
Jean-marie Paillo University of Poitiers France
Marco Pala IMEP-LAHC France
Tomas Palacios Massachusetts Institute of Technology United States
Pierpaolo Palestri Universita degli Studi di Udine Italy
Giorgio Palma CEA LETI MINATEC France
Dev Palmer Defense Advanced Research Projects Agency United States
Tung-Ming Pan Chang Gung University Taiwan
Feng Pan Tsinghua University China
Andrew Pan University of California at Los Angeles United States
Georgios Panagopoulos Intel Corporation Germany
Swamy Pandian IGCAR India
M.K. Pandian Pandian Saraswathi Yadav Engineering college India
Claudio Paoloni Lancaster University United Kingdom
Ilias Pappas Aristotle University of Thessaloniki Greece
Sung Kyu Park Chung-Ang University Korea
Jin-Seong Park Hanyang University Korea
Sang Phill Park Intel Corporation United States
Kwon-shik Park LG Display Korea
Joon Seok Park Samsung Advanced Institute of Technology Korea
Young-Woo Park Samsung Electronics Korea
Seong Geon Park Samsung Electronics Co. Ltd Korea
Byung-Gook Park Seoul National University Korea
Jong Tae Park University of Incheon Korea
Anthony Parker Macquarie University Australia
Chittor Parthasarathy STMicroelectronics India
Bertrand Parvais IMEC Belgium
John Pasour Naval Research Laboratory United States
Daniel Pasquet LaMIPS France
Douglas  Paul University of Glasgow United Kingdom
Marcelo Pavanello Centro Universitario da FEI Brazil
David Pawlik Rochester Institute of Technology United States
Stephen Pearton University of Florida United States
Michael Pecht University of Maryland United States
Lourdes Pelaz Universidad de Valladolid Spain
Jonathan Pelz Ohio State University United States
Jianwei Peng GlobalFoundries United States
Kurt Pernstich Zurich University of Applied Sciences Switzerland
Michael Petelin Institute of Applied Physics Russian Academy of Sciences Russia
Ian Marius Peters National University of Singapore Singapore
John Petillo Science Applications International Corp. United States
Kin-Leong Pey Singapore University of Technology & Design Singapore
Fortunato Pezzimenti Mediterranea University of Reggio Calabria Italy
Anh-Tuan Pham Samsung Semiconductor Inc. United States
Tue Phan Japan Advanced Institute of Science and Technology Japan
Alan Phelps University of Strathclyde United Kingdom
Gianluca Piazza Carnegie Mellon University United States
Peter Pichler Fraunhofer Institute Germany
Rodrigo Picos Universitat de les Illes Balears Spain
Claudio Piemonte Fondazione Bruno Kessler Italy
Adrien Pierre University of California at Berkeley United States
Er-Xuan Ping Applied Materials, Inc. United States
Robinson Pino Air Force Research Laboratory United States
Bernhard Piosczyk Institut fur Hochleistungsimpuls-und Germany
Joachim Piprek NUSOD Institute United States
Gregor Pobegen KAI GmbH Austria
Dionyz Pogany Technical University of Vienna Austria
Thierry Poiroux CEA France
Ronald G. Polcawich U.S. Army Research Laboratory United States
Chi-Sang Poon Massachusetts Institute of Technology United States
Mahdi Pourfath Technical University of Vienna Austria
Siavash Pourkamali University of Denver United States
Sandra PralgauskaitÄ— Vilnius University Lithuania
Moshe Preil GlobalFoundries United States
Guillaume Prenat SPINTEC (CEA/CNRS) France
Gregory Prigozhin Massachusetts Institute of Technology United States
Boris V Prokofiev Federal State Unitary Enterprise Russia
Kanan Puntambekar Northwestern University United States
Srinivasan Purushothaman GlobalFoundries United States
Yevgeniy Puzyrev Vanderbilt University United States
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Ming Qiao University of Electronic Science and Technology of China China
Teng Qiu Southeast University China
RĂĽdiger Quay Fraunhofer IAF Germany
Etienne Quesnel CEA France
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Ujwal Radhakrishna Indian Institute of Technology Madras India
Quentin Rafhay MINATEC France
Mustapha Rafik STMicroelectronics France
Nagarajan Raghavan Singapore University of Technology & Design Singapore
Mina Rais-Zadeh University of Michigan United States
Deven Raj Applied Materials, Inc. United States
Bijesh Rajamohanan Pennsylvania State University United States
Bipin Rajendran IBM T J Watson Research Center United States
Shantanu Rajwade Cornell University United States
Shaloo Rakheja Massachusetts Institute of Technology United States
Nirmal Ramaswamy Micron Technology United States
Edwin Ramayya Intel Corporation United States
Stephen Ramey Intel Corporation United States
Michael Ramon University of Texas at Austin United States
V. Ramgopal Rao Indian Institute of Technology Bombay India
Hooman Rashtian University of British Columbia Canada
Jean-Pierre Raskin Université Catholique de Louvain Belgium
Perumal Ratnam SanDisk Corp. United States
Stewart Rauch IBM Microelectronics Division United States
Umberto Ravaioli University of Illinois at Urbana-Champaign United States
Cristian Ravariu Politehnica University of Bucharest Romania
Samit K Ray Indian Institute of Technology Kharagpur India
Arijit Raychowdhury Georgia Institute of Technology United States
Manijeh Razeghi Northwestern University United States
Michael Read Calabazas Creek Research Inc United States
Gabriel Rebeiz University of California at San Diego United States
Dharmendar Reddy University of Texas at Austin United States
Susanna Reggiani Universita di Bologna Italy
Lino Reggiani Universita di Lecce Italy
Leonard Register University of Texas at Austin United States
Hans Reisinger Infineon Technologies AG Germany
Fengbo Ren University of California at Los Angeles United States
Raul Rengel Universidad de Salamanca Spain
Paul J. Resnick Sandia National Laboratories United States
Alberto Revelant Universita degli Studi di Udine Italy
Ignacio Rey-Stolle Instituto de Ciencia de Materiales de Sevilla Spain
Omid Rezvanian SunEdison United States
Curt Richter National Institute of Standards and Technology United States
Denis Rideau STMicroelectronics France
Jae-Sung Rieh Korea University Korea
Sara Rigante Ecole Polytechnique Fédérale de Lausanne Switzerland
Niccolo Rinaldi Universita di Napoli Italy
Rafael Rios Intel Corporation United States
Romain Ritzenthaler IMEC Belgium
Jonathan Rivnay Ecole Nationale Supérieure des Mines de Saint Etienne France
John Robertson Cambridge University United Kingdom
Pavel Rodin Ioffe Physicotechnical Institute Russia
Noel Rodriguez Universidad de Granada Spain
Rosana RodrĂ­guez Universitat Autonoma de Barcelona Spain
Yannick Roelens IEMN France
Timothy Rogne SRI International United States
Hans Rohdin Avago Technologies United States
Jaume Roig OnSemiconductor Belgium BVBA Belgium
Albert Roitman Communications and Power Industries Canada
Lucimara Roman Universidade Federal do Parana Brazil
Sean Rommel Rochester Institute of Technology United States
Kevin Ronald University of Strathclyde United Kingdom
Marco Rossi Sapienza University United States
Nicolas Rouger G2Elab - UMR 5269 France
Michel Rousseau IEMN France
Ananda Roy Intel Corporation United States
Arunanshu Roy WiTricity Corp. United States
Cunjun Ruan Institute of Electronics, Chinese Academy of Sciences China
Tamara Rudenko National Academy of Sciences of Ukraine Ukraine
Sergey Rumyantsev Rensselaer Polytechnic Institute United States
Alexandru Rusu Ecole Polytechnique Fédérale de Lausanne Switzerland
Phil Rutter NXP Semiconductors United Kingdom
Kyung-Chang Ryoo Samsung Electronics Co. Ltd. Korea
Jae-Hyun Ryou Georgia Institute of Technology United States
Nikita Ryskin Saratov State University Russia
S.K. Ryu Apple Inc United States
Sei-Hyung Ryu Cree Inc United States
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Shivashankar S. A. Indian Institute of Science India
Omair Saadat Massachusetts Institute of Technology United States
Svilen Sabchevski Institute of Electronics of the Bulgarian Academy of Sciences Bulgaria
Angada Sachid University of California at Berkeley United States
Jerome Saint-Martin Univ. Paris-Sud, CNRS France
Masumi Saitoh Toshiba Corporation Japan
Shigeki Sakai National Institute of Advanced Industrial Science and Technology Japan
Paulius Sakalas Dresden University of Technology Germany
Kenji Sakamoto National Institute for Materials Science Japan
Wataru Sakamoto Toshiba Corporation Japan
Masao Sakuraba Tohoku University Japan
Shairfe Salahuddin Hong Kong University of Science and Technology Hong Kong
Sayeef Salahuddin University of California at Berkeley United States
Jean-Michel Sallese Ecole Polytechnique Fédérale de Lausanne Switzerland
Giovanni Antonio Salvatore Ecole Polytechnique Fédérale de Lausanne Switzerland
Sri Samavedam GlobalFoundries United States
Sanjiv Sambandan Indian Institute of Science India
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Krishna Saraswat Stanford University United States
Vinay Saripalli Intel Corporation United States
Chandan Sarkar Jadavpur University India
Akira Satou Tohoku University Japan
Sangameshwar Saudari IBM Corporation United States
Sneh Saurabh Indian Institute of Technology India
Takayuki Sawada Hokkaido Institute of Technology Japan
Binit Saymal Nanyang Technological University Singapore
Edl Schamiloglu University of New Mexico United States
Ryan Schimizzi North Carolina State University United States
Harald Schneider Helmholtz-Zentrum Dresden-Rossendorf Germany
Andries Scholten NXP Semiconductors Netherlands
Michael Schröter Technische Universität Dresden Germany
Ulrich Schwarz Fraunhofer IAF Germany
Frank Schwierz Technische Universitätt Ilmenau Germany
Reinhard Schwoediauer Johannes Kepler University Austria
Monica Sears Intel Corporation United States
Ehrenfried Seebacher Austriamicrosystems Austria
Gotthard Seifert Technische Universität Dresden Germany
Peter Seitz Ecole Polytechnique Fédérale de Lausanne Switzerland
Siegfried Selberherr Technical University of Vienna Austria
Luca Selmi Universita degli Studi di Udine Italy
Vladimir  Semyonov Institute of Applied Physics, Russian Acadamy of Sciences Russia
Sean Sengele Georgia Tech Research Institute United States
Amretashis Sengupta Indian Institute of Engineering Science and Technology India
Alexandru Serb Imperial College London United Kingdom
Diego Serrano Qualtré, Inc. United States
Michael Shapiro Massachusetts Institute of Technology United States
Jonathan Shaw Naval Research Laboratory United States
J. Richard Shealy Cornell University United States
Chen Shen Fudan University China
Shyh-Chiang Shen Georgia Institute of Technology United States
Praveen Shenoy IR United States
David Sheridan RF Micro Devices United States
Jinn-Kong Sheu National Cheng-Kung University Taiwan
Jin-Wei Shi National Central University Taiwan
Daisuke Shibata Panasonic Corporation Japan
Ayman Shibib Vishay Siliconix United States
Chun-Hsing Shih National Chi Nan University Taiwan
Sunbo Shim University of California at Los Angeles United States
Hisashi Shima National Institute of Advanced Industrial Science and Technology Japan
Mincheol Shin KAIST Korea
Young Min Shin Northern Illinois University United States
Hyungcheol Shin Seoul National University Korea
Changhwan Shin University of Seoul Korea
Keisuke Shinohara HRL Laboratories, LLC United States
Kenji Shiraishi University of Tsukuba Japan
Riichiro Shirota National Chiao Tung University Taiwan
Mayank Shrivastava Indian Institute of Science Bangalore India
Pavel Shushpannikov Russian Academy of Sciences Russia
Jia Si University of Electronic Science and Technology of China China
Dieter Silber University of Bremen Germany
Grigory Simin University of South Carolina United States
Eddy Simoen IMEC Belgium
Navab Singh Institute for Microelectronics Singapore
Ashok Sinha CEERI, Pilani India
Mantavya Sinha GlobalFoundries United States
Brian Skinner University of Minnesota United States
Lucas Snyman Tshwane University of Technology South Africa
Masayuki Sohgawa Niigata University Japan
Paul Solomon IBM T.J. Watson Research Center United States
Hyungbin Son Chung-Ang University Korea
Chung-Kun Song Dong-A University Korea
Yu-Ling Song Nanyang University China
Aimin Song University of Manchester United Kingdom
Ken'ichiro Sonoda Renesas Technology Corp. Japan
Roman Sordan Politecnico di Milano Italy
Bart Sorée IMEC Belgium
Khandelwal Sourabh University of California at Berkeley United States
Richard Southwick IBM Corporation United States
Ivan Spassovsky ENEA Italy
James Speck University of California at Santa Barbara United States
Alessio Spessot Micron Technology Belgium
Arthur Spivak Ben-Gurion University of the Negev Israel
Vishnu Srivastava Central Electronics Engineering Research Institute India
Navin Srivastava Mentor Graphics United States
Barbara  Stadlober Institute of Nanostructured Materials and Photonics Austria
Peter Stallinga University of the Algarve Portugal
Rolf Stangl National University of Singapore Singapore
James Stathis IBM T. J. Watson Research Center United States
Matthias Stecher Infineon Technologies AG Germany
Alexandra Stefanescu IMT Bucharest Romania
Eric Stevens True Sense Imaging United States
Ninoslav Stojadinovic University of Nis Serbia
David Stoppa Fondazione Bruno Kessler Italy
Robert Street Palo Alto Research Center United States
Andreas Stricker - United States
Dmitri Strukov University of California at Santa Barbara United States
Michele Stucchi IMEC Belgium
Lubica Stuchlikova Slovak University of Technology in Bratislava Slovakia
Pin Su National Chiao Tung University Taiwan
R.Y. Su TSMC Taiwan
John Suehle National Institute of Standards and Technology United States
Nobuyuki Sugii Low-power Electronics Association & Project Japan
Tomislav Suligoj University of Zagreb Croatia
William Sullivan III DRS Technologies United States
R. Scott Summerfelt Texas Instruments Inc. United States
Yanning Sun IBM T.J. Watson Research Center United States
Chang-Qing Sun Nanyang Technological University Singapore
Weifeng Sun Southeast University China
Xiao Sun Yale University United States
Manan Suri CEA LETI MINATEC France
Charles Surya Hong Kong Polytechnic University Hong Kong
John A. Swegle Savannah River National Laboratory United States
Somaia Sylvia University of California at Riverside United States
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Massood Tabib-Azar University of Utah United States
Roozbeh Tabrizian Georgia Institute of Technology United States
Kiichi Tachi Tokyo Institute of Technology Japan
Munehiro Tada LEAP Japan
Kristof Tahy University of Notre Dame United States
Shinichi Takagi University of Tokyo Japan
Kyoya Takano Hiroshima University Japan
Daisaburo Takashima Toshiba Corporation Japan
Mitsuru Takenaka University of Tokyo Japan
Yukio Tamai Sharp Corporation Japan
Chuan Seng Tan Nanyang Technological University Singapore
Fei Tan University of Illinois United States
Chee Hing Tan University of Sheffield United Kingdom
Yasunori Tanaka AIST Japan
Takuji Tanaka Fujitsu Semiconductor Japan
Minghua Tang Xiangtan University China
Nelson Tansu Lehigh University United States
Dimitrios Tassis Aristotle University of Thessaloniki Greece
Yuan Taur University of California at San Diego United States
Negar Tavassolian Stevens Institute of Technology United States
D. Martin Taylor Bangor University United Kingdom
James Teherani Massachusetts Institute of Technology United States
Kazuo Terada Hiroshima City University Japan
Nir Tessler Technion - Israel Institute of Technology Israel
Paragkumar Thadesar Georgia Institute of Technology United States
Gaurav Thareja Intel Corporation United States
Aaron Thean IMEC Belgium
Thomas Theis IBM T.J. Watson Research Center United States
Han Wui Then Intel Corporation United States
Didier Theron IEMN France
Jean-Luc Thobel IEMN France
Jifa Tian Purdue University United States
Luuk Tiemeijer NXP Semiconductors Netherlands
Isabel Tienda-Luna University of Granada Spain
Ioannis Tigelis National and Kapodistrin University of Athens Greece
Julio Tinoco Universidad Veracruzana Mexico
Jeffrey Titus Navsea Crane United States
Yuri Tkachev Silicon Storage Technology, Inc. United States
Daniel Tomaszewski Institute of Electron Technology Poland
Katsuhiro Tomioka Hokkaido University Japan
Alexander Tomkins Peraso Canada
Jens Tomm Max Born Institute Germany
Akira Toriumi University of Tokyo Japan
Nagumo Toshiharu Renesas Electronics Corp. Japan
Gaetan Toulon LAAS-CNRS France
James Tour Rice University United States
Elias Towe Carnegie Mellon University United States
Fabio Traversa Universitat Autònoma de Barcelona Spain
Renan Trevisoli Centro Universitario da FEI Brazil
Vishal Trivedi Freescale Semiconductor Inc. United States
Richard True L-3 Communications - Electron Devices Division United States
Jung-Ruey Tsai Asia University Taiwan
Ming-Yi Tsai Chang Gung University Taiwan
Yu-Shun Tsai Cheng Shiu University Taiwan
Ming-Jinn Tsai Industrial Technology Research Institute Taiwan
Ping-Hung Tsai Macronix International Co. Ltd. Taiwan
Wen-Jer Tsai Macronix International Co. Ltd. Taiwan
Tsung-Ming Tsai National Sun Yat-Sen University Taiwan
Victor Farm-Guoo Tseng University of Florida United States
Andreas Tsormpatzoglou Aristotle University of Thessaloniki Greece
Hideaki Tsuchiya Kobe University Japan
Soichiro Tsujino Paul Scherrer Institut Switzerland
John Tucek Northrop Grumman Corporation United States
Ahmet Tura Intel Corporation United States
Renato Turchetta Science and Technology Facilities Council United Kingdom
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Uday Udayakumar Texas Instruments Inc. United States
Giacomo Ulisse University of Rome Italy
Yukiharu Uraoka NAIST Japan
Michael Uren University of Bristol United Kingdom
Habibe Uslu KarabĂĽk University Turkey
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Raphaël Valentin Institut de Nanotechnologie de Lyon France
Pouya Valizadeh Concordia University Canada
Christophe Vallée LTM, UMR CNRS 5129 France
Joost Van Beek NXP Semiconductors Netherlands
Geert Van den bosch IMEC Belgium
Arnoud van der Wel NXP Semiconductors Netherlands
Jan Van Houdt IMEC Belgium
Marleen Van Hove IMEC Belgium
Lode Vandamme Eindhoven University of Technology Netherlands
Luca Vandelli UniversitĂ  di Modena e Reggio Emilia Italy
William Vandenberghe University of Texas at Dallas United States
Dhanoop Varghese Texas Instruments Inc. United States
B.G.  Vasallo Universidad de Salamanca Spain
Tim Vasen University of Notre Dame United States
Vladislav Vashchenko Maxim Integrated Products United States
Dragica Vasileska Arizona State University United States
Konstantin Vasilevskiy Newcastle University United Kingdom
Reinaldo Vega IBM Corporation United States
Dmitry Veksler Sematech United States
Anne Verhulst IMEC Belgium
Naveen Verma Princeton University United States
Giovanni Verzellesi UniversitĂ  di Modena e Reggio Emilia Italy
Andrei Vescan RWTH Aachen University Germany
Ramakrishna Vetury RF Micro Devices United States
Elisa Vianello CEA LETI France
Anthony Villalon CEA-LETI France
Ana Villamor CNM Spain
Kumar Virwani IBM Almaden Research Center United States
Rajat Vishnoi Indian Institute of Technology, Delhi India
Suresh Vishwanath University of Notre Dame United States
Steven Vitale Massachusetts Institute of Technology United States
Eric Vittoz - Switzerland
Alexander Vlasov Naval Research Laboratory United States
Eric Vogel Georgia Institute of Technology United States
Steven Voldman Qimonda United States
Ioannis Vourkas Democritus University of Thrace Greece
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Richard Wachnik IBM Corporation United States
Dietmar Wagner Max-Planck-Institut fuer Plasmaphysik Germany
Akio Wakejima Nagoya Institute of Technology Japan
Edo Waks University of Maryland United States
Andrew Walker Schiltron Corporation United States
Geng Wang IBM Corporation United States
Weike Wang IBM Corporation United States
Miaomiao Wang IBM Research United States
Xin Peng Wang IMEC Belgium
Yuan Wang Institute of Microelectronics China
Sheng Kai Wang Institute of Microelectronics, Chinese Academy of Sciences China
Ruey-Ven Wang Intermolecular, Inc. United States
Xingzhe  Wang Lanzhou University United States
Hong Wang Nanyang Technological University Singapore
Tahui Wang National Chiao Tung University Taiwan
Ching-Hua Wang National Tsing Hua University Taiwan
Luheng Wang Northeastern University China
Cheng-Wei Wang Northwest Normal University China
Xin Wang Omnivision Technologies Inc United States
Maojun Wang Peking University China
Runsheng Wang Peking University China
Mingxiang Wang Soochow University China
Naiyin Wang South China Normal University China
Yan Wang Tsinghua University China
Shih Ming Wang United Microelectronics Corp. Taiwan
Xingsheng Wang University of Glasgow United Kingdom
Han Wang University of Southern California United States
Danling Wang University of Washington United States
Weizhong Wang University of Wisconsin-Milwaukee United States
Jonathan, W. Ward Lockheed Martin United States
Rainer Waser Forschungszentrum Julich GmbH Germany
Katsuyoshi Washio Tohoku University Japan
Edward Wasige University of Glasgow United Kingdom
Takashi Watanabe Brookman Technology Japan
Hiroshi Watanabe National Chiao Tung University Taiwan
Bucknell  Webb IBM Corporation United States
Walter Weber Technische Universität Dresden Germany
Eric Webster Institute for Integrated Micro and Nano Systems United Kingdom
Pieter Weckx Katholieke Universiteit Leuven Belgium
Roshan Weerasekera Institute of Microelectronics Singapore
Zhiqiang Wei Panasonic Corporation Japan
Hai Wei Stanford University United States
Eva Maria Weig University of Konstanz Germany
Claude Weisbuch Ecole Polytechnique France
Lars-Erik Wernersson Lund University Sweden
Christian Wetzel Rensselaer Polytechnic Institute United States
David Whaley L-3 Communications Electron Devices Division United States
Marvin White Ohio State University United States
Gregory Whiting Palo Alto Research Center United States
Allan G Williamson University of Auckland New Zealand
Jeffrey Wilson NASA Glenn Research Center United States
Gilson Wirth UFRGS Brazil
Songtao Wo Samsung Electronics United States
Man Wong Hong Kong University of Science and Technology Hong Kong
Man Hoi Wong Sematech United States
Gene Worley Qualcomm United States
Edward Wright Beam-Wave Research, Inc. United States
Wenzhuo Wu Georgia Institute of Technology United States
Yangqing Wu Huazhong University of Science and technology China
Ernest Wu IBM Microelectronics Division United States
Boping Wu Intel Corporation United States
Chen-Jun Wu Macronix International Co. Ltd. Taiwan
Shich-Chuan Wu National Nano device Laboratories Taiwan
Chao-Hsin Wu National Taiwan University Taiwan
Yuh-Renn Wu National Taiwan University Taiwan
Jyh-Ming  Wu National Tsing Hua University Taiwan
Yung-Chun Wu National Tsing Hua University Taiwan
Yung-Hsien Wu National Tsing-Hua University Taiwan
Yi Wu Stanford University United States
Huaqiang Wu Tsinghua University China
Ming Wu University of California at Berkeley United States
Zhengzheng Wu University of Michigan United States
Joachim Wuerfl Ferdinand-Braun-Institut Germany
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Youhao Xi Texas Instruments Inc. United States
Kejun Xia Auburn University United States
Ling Xia Massachusetts Institute of Technology United States
Ran Xiao University of Windsor Canada
Ruilong Xie GlobalFoundries United States
Huili Xing University of Notre Dame United States
Feng Xiong University of Illinois at Urbana-Champaign United States
Dong Xu BAE Systems United States
Guangyu Xu Harvard University United States
Zheng Xu IBM Corporation United States
Chuan Xu Maxim Integrated United States
Nuo Xu University of California at Berkeley United States
Zhao Xu University of Michigan United States
Huilong Xu University of Notre Dame United States
Yi Xuan Purdue University United States
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Kojiro Yagami Sony Corporation Japan
Eilam Yalon Technion - Israel Institute of Technology Israel
Ren-ichi Yamada Hitachi Ltd. Japan
Masafumi Yamaguchi Toyota Technological Institute Japan
Shumpei Yamazaki Semiconductor Energy Lab Co Ltd Japan
Jun Yan Colorado School of Mines United States
Minjun Yan University of Illinois at Urbana Champaign United States
Guang Yang Forza Silicon Corp. United States
Hyung Suk Yang Georgia Institute of Technology United States
Jianhua Yang Hewlett-Packard Laboratories United States
Shu Yang Hong Kong University of Science and Technology Hong Kong
Jong-Ryul Yang Korea Electrotechnology Research Institute Korea
Hyunsoo Yang National University of Singapore Singapore
Yang Yang Texas Instruments Inc. United States
F.J. Yang TSMC Taiwan
Yuchao Yang University of Michigan United States
Ruo-He Yao South China University of Technology China
Jane Yater Freescale Semiconductor Inc. United States
Kenneth  Yau University of Toronto Canada
Peide Ye Purdue University United States
Zhizhen Ye Zhejiang University China
Eric Yeatman Imperial College London United Kingdom
Yung-Hui Yeh Industrial Technology Research Institute Taiwan
C. W.  Yeh Macronix International Co. Ltd. Taiwan
Wen-Kuan Yeh National University of Kaohsiung Taiwan
Yee-Chia Yeo National University of Singapore Singapore
John Yeow University of Waterloo Canada
Jaeyun Yi SK Hynix Korea
Hamza Yilmaz AOS Semiconductor United States
Jianhua Yin GlobalFoundries United States
Shang-Ping Ying Minghsin University Taiwan
Natsuki Yokoyama Hitachi Ltd. Japan
Seunghyup Yoo KAIST Korea
Sung Min Yoon Kyung Hee University Korea
Youngki Yoon University of Waterloo Canada
Eiji Yoshida Fujitsu Microelectronics Limited Japan
Takeshi Yoshimura Osaka  Prefecture University Japan
Sifang You Oracle Corporation United States
Ian Young Intel Corporation United States
Darrin Young University of Utah United States
Kristina Young-Fisher Sematech United States
Shimeng Yu Arizona State University United States
Bo Yu Qualcomm Incorporated United States
HongYu Yu South University of Science and Technology of China China
Jun Yuan Qualcomm United States
Jiahui Yuan SanDisk Corp. United States
Yuanzheng Yue University of Notre Dame United States
Minhee Yun University of Pittsburgh United States
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Cristian Zambelli University of Ferrara Italy
Peter Zampardi Skyworks Solutions Inc. United States
Enrico Zanoni Universita di Padova Italy
Franco Zappa Politecnico di Milano Italy
Payman Zarkesh-Ha University of New Mexico United States
Alexander Zaslavsky Brown University United States
Jana Zaumseil University of Erlangen-Nuremberg Germany
Gennady Zebrev Moscow Engineering Physics Institute (National Research Nuclear University) Russia
Christoph Zechner Synopsys Switzerland Inc. Switzerland
Jun Zeng MaxPower Semiconductor Inc United States
Caifu Zeng University of California at Los Angeles United States
Carl-Mikael Zetterling KTH Royal Institute of Technology Sweden
Wei Zhang Broadcom Corporation United States
Kun Zhang Clarkson University United States
Yang Zhang Georgia Institute of Technology United States
Lining Zhang Hong Kong University of Science and Technology Hong Kong
Leqi Zhang IMEC Belgium
Xing Zhang Institute of Microelectronics China
Lining Zhang Institute of Microelectronics, Peking University China
Guangyu Zhang Institute of Physics China
Zhiyong Zhang Institution of Physical Electronics China
Jian Zhang Liverpool John Moores University United Kingdom
Shengdong Zhang Peking University China
Lijie Zhang Samsung Electronics Korea
Liangliang Zhang Stanford University United States
Baijun Zhang Sun Yat-sen University China
Li Zhang Toshiba Corporation Japan
Jinyu Zhang Tsinghua University China
Bo Zhang University of Electronic Science and Technology of China China
Yong Zhang University of North Carolina at Charlotte United States
Lu Zhang University of Pittsburgh United States
Chao Zhang University of Wollongong Australia
Hongping Zhao Case Western Reserve University United States
WeiSheng Zhao CEA LIST France
Qing-Tai Zhao Forschungszentrum Julich GmbH Germany
Shuyun Zhao Hong Kong University of Science and Technology Hong Kong
Pei Zhao University of Notre Dame United States
Qingfeng Zheng Northwestern Polytechnical University China
Victor Zhirnov Semiconductor Research Corp. United States
Jianxin Zhong Xiangtan University China
Xing Zhou Nanyang Technological University Singapore
Otto Zhou University of North Carolina United States
Huichao Zhu Dalian University of Technology China
Z. Zhu Freescale Semiconductor Inc. United States
Shiyang Zhu Institute of Microelectronics, A*STAR Singapore
Thomas Zimmer Université de Bordeaux France
Martin Zirkl Joanneum Research Forschungsges mbH Austria
Nikolas Zographos Synopsys Switzerland Inc. Switzerland
Paul Zuber IMEC Belgium
Paola Zuliani STMicroelectronics Italy
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