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Victor Moroz

Silicon and Column IV Semiconductor Devices, Solid-State Device Phenomena

moroz

Synopsys Inc
700 East Middlefield Rd
Mountain View CA 9403
USA
Phone:+1 650 584 5458
  Fax: +1 650 584 1366

E-mail: Victor.Moroz@synopsys.com

 

Victor Moroz received M.S. degree in Electrical Engineering from Novosibirsk Technical University and Ph.D. degree in Applied Physics from the University of Nizhny Novgorod. After engaging in technology development at several semiconductor manufacturing companies and teaching at the University of Nizhny Novgorod, Dr. Moroz joined Technology Modeling Associates in 1995, which later became a part of Synopsys.
 

Currently Dr. Moroz is a Synopsys Scientist, engaged in a variety of projects on modeling FinFETs, gate-all-around nano-wires, stress engineering, 3D ICs, transistor scaling, Middle-Of-Line and Back-End-Of-Line RC, solar cell design, innovative patterning, random and systematic variability, junction leakage, non-Si transistors, and atomistic effects in layer growth and doping.  Several facets of this activity are reflected in three book chapters and over 100 technical papers, invited presentations, and patents.  He has been involved in technical committees at ITRS, IEDM, SISPAD, DFM&Y, ECS, IRPS, and ESSDERC.