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Fellow Evaluations Committee

  • Fellow Evaluation Committee Chair

    • Paul K.L. Yu
       - Fellow
      University of California at San Diego
      ECE Department, MS 0407
      9500 Gilman Dr., Eng. Bldg. Unit 1, Room 3604
      La Jolla, CA 92093-0407
      USA
      Phone 1:
      +1 858 534 6180

      Fax:
      +1 858 534 0556
      Lecture Topics: Recent Advances in Photonic Devices for RF/Wireless, Semiconductor Wafer Bonding Technology for Device Integration
  • Fellow Evaluation Committee Members

    • Mikael Östling
       - Fellow
      KTH, Royal Institute of Technology
      Dept of Microelectronics and InfoTech
      Electrum 229
      Kista SE-164 40
      Sweden
      Phone 1:
      +46 8 790 4301

      Fax:
      +46 8 752 7850

      Mikael Östling (M’ 85- F’04) received his MSc and the PhD degrees from Uppsala University, Sweden. He holds a position as professor in solid state electronics at KTH, Royal Institute of Technology in Stockholm, Sweden. He is currently department head of Integrated Devices and Circuits and was the dean of the School of Information and Communication Technology, KTH, between 2004–12. Östling was a senior visiting Fulbright Scholar at Stanford University, and a visiting professor with the University of Florida, Gainesville. In 2005 he co-founded the company TranSiC, acquired in full by Fairchild Semiconductor 2011. He was awarded the first ERC grant for advanced investigators. His research interests are nanoscaled Si and Ge device technologies and emerging 2D materials, as well as device technology for wide bandgap semiconductors for high power / high temperature applications. He has supervised 35 PhD theses work and co -authored about 500 scientific papers published in international journals and conferences. Mikael Östling was an editor of the IEEE Electron Device Letters 2005-2014 and appointed vice president of EDS since 2014. Mikael is a Fellow of the IEEE.


      Lecture Topics: SiC Device Technology for energy efficiency and for high temperature operation Silicon Nanoscaled Device Technology

    • Meyya Meyyappan
       - Fellow
      NASA Ames Research Center
      Center for Nanotechnology
      Mailstop 229-3
      Moffett Field, CA 94035
      USA
      Phone 1:
      +1 650 604 2616

      Fax:
      +1 650 604 5244
      Lecture Topics: 1. An overview of recent developments in Nanotechnology

      2. Nanotechnology in nanoelectroncis, optoelectronics and sensor development

      3. Carbon based electronics

      4. Nanotechnology: development of practical systems and nano-micro-macro integration.
    • Jacobus W. Swart
       - Senior Member
      FEEC/UNICAMP - State University of Campinas
      Av. Albert Einstein 400
      Campinas, Sao Paul 13.083-970
      Brazil
      Phone 1:
      +55 19 3746 6001

      Lecture Topics: MEMS, sensors, ISFET, CNT and graphene, Advanced CMOS processes
    • Usha Varshney
      National Science Foundation
      Arlington, VAUSA
    • Juzer Vasi
      Department of Electrical Engineering
      Indian Institute of Technology
      Bombay, Mumbai 400076
      India
      Juzer Vasi is with the EE Department at the Indian Institute of Technology Bombay (IITB), Mumbai. He has worked in in the areas of CMOS and Photovoltaic devices. He was co-founder of the National Centre for Photovoltaic Research and Education (NCPRE) at IITB, and is the Research Thrust Co-Lead for the Solar Energy Research Institute for India and the US (SERIIUS), a bi-national consortium project. His current area of research is photovoltaic module reliability.
      He is a Fellow of the IEEE and the Indian National Academy of Engineering (INAE). He was an Editor of IEEE Transactions on Electron Devices from 1996 to 2003, an EDS Distinguished Lecturer from 2001 to 2006, and Chair of the EDS Asia-Pacific SRC from 2005 to 2006.
      He obtained the B.Tech. degree in Electrical Engineering from IITB and a Ph.D. from Johns Hopkins University.
    • Albert Z.H. Wang
       - Fellow
      University of California
      Dept. of Electrical and Computer Engineering
      Office: 417 EBU2, Lab: 227 EBU2
      Riverside, CA 92521
      USA
      Phone 1:
      +1 951 827 2555

      Fax:
      +1 951 827 2425

      Lecture Topics:


      1. ESD-RFIC co-design techniques.
      2. Mixed-mode ESD protection circuit simulation design methodology.
      3. Above-IC ESD protection by nano technology
      4. Field-programmable ESD protection by nano technology

    • Bin Zhao
       - Fellow
      ON Semiconductor
      32 Discovery, Suite 100
      Irvine, CA 92618
      USA
      Phone 1:
      +1 949 266 6800

      Fax:
      +1 614 737 6800

      Lecture Topics:


      > Analog/Mixed-Signal/RF IC and Enabling Technologies
      > High Performance VLSI Interconnect

  • Fellow Evaluator for 2017 Fellow Nominations

    • Akintunde (Tayo) Akinwande
      MIT
      Room 39-553A
      60 Vassar St.
      Cambridge, MA 02139-4309
      USA
      Phone 1:
      +1 617 258 7974

    • Mark Allen
    • Duane Boning
      MIT
      Associate Prof., EECS, Asssociate Director, MLT
      60 Massachusetts Ave
      Cambridge, MA 02139
      USA
      Phone 1:
      +1 617 253 0931

      Fax:
      +1 617 253 9606
    • Mansun J. Chan
      Hong Kong University of Science and Tech.
      Dept. of Electronic and Computer Eng.
      Clear Water Bay, Kowloon, Hong Kong
      Phone 1:
      +852 2358 8519

      Fax:
      +852 2358 1485
      Email 1:
      mchan@ust.hk

      Lecture Topics:  1) Nano-device physics and technology 2) Device modelling and circuit simulation 3) Non-volatile memory technology 4) Bio-sensors and circuits MANSUN CHAN received his MS and Ph.D. from the University of California at Berkeley. He is currently a Professor at the Department of Electronic and Computer Engineering of the Hong Kong University of Science and Technology (HKUST). His main research covers novel silicon device fabrication and modeling. In particular, he is one of the key developers of the BSIM model series that have been selected to be the industrial standard models for conventional and SOI MOSFETs used by the semiconductor industry worldwide. Prof. Chan has served IEEE in various capacities and he is currently a Distinguished Lecturer of IEEE EDS.


      Biography:  Mansun Chan (S’92-M’95-SM’01-F’13) received Ph.D. degrees from the UC, Berkeley in 1995. He is one of the major contributors to the unified BSIM model for SPICE, which has been accepted by most US companies and the Compact Model Council (CMC) as the first industrial standard MOSFET model. In January 1996, he has joined the EEE faculty at Hong Kong University of Science and Technology.  After that, he developed a SOI MOSFET model, which has been adopted by UC Berkeley as the core of the BSIMSOI model.  Between July 2001 and December 2002, he was a Visiting Professor at University of California at Berkeley and the Co-director of the BSIM program.  In this capacity, he has successfully completed the technology transfer of BSIM3SOI to be the first industrial standard SOI MOSFET model.  In addition to device modeling, Prof. Chan’s current research interests also include nano-transistor fabrication technology, carbon-based device physics, printable transistors, 3D integrated circuits, bio-sensors and cloud computing based simulation platform.  He is current working on an interactive modeling and online simulation (i-MOS) platform to facilitate the interactions between model developers and circuit designers using the Internet technology.


      Prof. Chan is a recipient of the UC Regents Fellowship, Golden Keys Scholarship for Academic Excellence, SRC Inventor Recognition Award, Rockwell Research Fellowship, R&D 100 award (for the BSIM3v3 project), Teaching Excellence Appreciation award, Distinguished Teaching Award and the Shenzhen City Technology Innovation Award by the Chinese Government. He is a Fellow and Distinguished Lecturer of IEEE.

    • Edoardo Charbon
    • Kevin J. Chen
       - Compound Semiconductor Devices
      Hong Kong University of Science and Technology
      Department of Electronic and Computer Engineering
      Clear Water Bay
      Kowloon,Hong Kong
      Phone 1:
      +1 852 23588969

      Prof. Kevin Chen received his B.S. degree from Peking University, Beijing, China in 1988, and PhD degree from University of Maryland, College Park, USA in 1993. His industry experience includes carrying out research and development on III-V high-speed devices in NTT LSI Laboratories, Atsugi, Japan and Agilent Technologies Inc., Santa Clara, California, USA. Prof. Chen joined Hong Kong University of Science and Technology (HKUST) in 2000, where he is currently a professor in the Department of Electronic and Computer Engineering. At HKUST, he has carried out research in wide-bandgap III-nitride devices and ICs, GaN-based MEMS devices, silicon-based microwave passive components and 3D through-silicon via interconnects, and multi-band reconfigurable microwave filters. Currently, his group is focused on developing GaN device technologies for power electronics and high-temperature electronics applications. Prof. Chen has authored or co-authored more than 280 publications in international journals and conference proceedings. He has been granted 4 US patents.
      He currently serves as a distinguished lecturer and a member in the compound semiconductor device and IC technology committee in IEEE Electron Device Society.
    • John Dallesasse
       - Associate Professor
      Department of Electrical and Computer Engineering
      University of Illinois at Urbana-Champaign
      2114 Micro and Nanotechnology Laboratory
      208 N. Wright Street
      Urbana, IL 61801
      USA
      Office:
      (217) 333-8416

    • John David
    • Aditya Gupta
    • Hiroki Hamada
    • Ray-Hua Horng
    • Meikei Ieong
       - Fellow
      Hong Kong Applied Science and Technology Research Institute
      Chief Technology Officer

      Biography: Meikei Ieong (SM’01) received the B.S. degree in electrical engineering from the National Taiwan University, Taipei, Taiwan, in 1991 and the M.S. and Ph.D. degrees in electrical and computer engineering from the University of Massachusetts, Amherst, in 1993 and 1996, respectively. He also received an MBA degree from the Sloan Fellows Program of Massachusetts Institute of Technology in 2013.


      Meikei is currently Vice-President of TSMC Europe. He was program director of TSMC’s 28nm High-Performance and Mobile Technologies. Prior to that he held various engineering and management positions at IBM including senior manager at IBM TJ. Watson Research Center, Yorktown, NY. He’s recipient of IBM Technical Achievement and Corporate awards and was elected as a Master Inventor at IBM Research.


      He held an adjunct associate professor position with the Department of Electrical Engineering from the Columbia University, NY in 2001. He was General Chairman of the IEEE International Electron Devices Meeting (IEDM). He has served as an editor for the IEEE Transaction on Electron Devices since 2010 and as chair of the IEEE EDS Education Award committee since 2013. He has Published more than one hundred papers in referred journals and conference proceedings and more than eighty patents. He also speaks frequently at international conferences and seminars.

    • Quanxi Jia
      Prof. Quanxi Jia is a world-renowned scholar in materials science. He is the Empire Innovation Professor and National Grid Professor of Materials Research in the Department of Materials Design and Innovation (MDI) at the State University of New York at Buffalo. He also serves as scientific director of UB’s New York State Center of Excellence in Materials Informatics (CMI). He is IEEE Fellow elected from IEEE EDS. He has authored or co-authored more than 470 peer-reviewed journal articles, delivered more than 100 invited lectures, and holds 48 U.S. patents. He serves as the co-editor-in-chief of Materials Research Letters, and sits on the editorial board of several academic and professional journals.
      Before joining SUNY Buffalo (UB) as a Professor in 2016, he spent more 20 years at the Los Alamos National Laboratory and served as a Division Director there. He is an elected Fellow of the Los Alamos National Laboratory, Materials Research Society, American Physical Society, American Ceramic Society and American Association for the Advancement of Science. He is an ideal liaison between Electron Devices Society and the Materials community.
    • Hongrui Jiang
      Vilas Distinguished Achievement Professor
      University of Wisconsin - Madison
      3440 Engineering Hall
      1415 Engineering Drive
      Madison, Wisconsin 53706
      USA
      Phone 1:
      1-608-265-9418

      Fax:
      1-608-262-1267

      Research Areas: Microfabrication technology, biological and chemical microsensors, microactuators, optical microelectromechanical systems, smart materials and micro-/nanostructures, lab on a chip, and biomimetics and bioinspiration.


      Professional Memberships: IEEE, OSA


      Biography: Hongrui Jiang is the Vilas Distinguished Achievement Professor in the Department of Electrical and Computer Engineering at the University of Wisconsin - Madison. He is also a Faculty Affiliate in the Department of Biomedical Engineering, a Faculty Member of the Materials Science Program, and a Member of the McPherson Eye Research Institute at UW-Madison. He received the B.S. degree in physics from Peking University, Beijing, China, and the M.S. and Ph.D. degrees in electrical engineering in 1999 and 2001, respectively, from Cornell University, Ithaca, NY. From 2001 to 2002, he was a Postdoctoral Researcher with the Berkeley Sensor and Actuator Center, University of California at Berkeley. Dr. Jiang was the recipient of the National Science Foundation CAREER Award and the Defense Advanced Research Projects Agency Young Faculty Award in 2008, the H. I. Romnes Faculty Fellowship of the University of Wisconsin in 2011, the NIH Director's New Innovator Award in 2011, and the Vilas Associate Award of the University of Wisconsin in 2013. Dr. Jiang has published over 100 peer reviewed publications and holds 6 issued US patents.

    • Steven J. Koester
       - Silicon and Column IV Semiconductor Devices; Emerging Technology and Devices
      University of Minnesota
      ECE
      200 Union St SE
      Minneapolis, MN 55455
      USA
      Phone 1:
      +1 612 625 1316

      Fax:
      +1 612 625 4583
      Steven J. Koester (M’96–SM’02) was born in Defiance, Ohio, in 1966. He received the B.S.E.E. and M.S.E.E. degrees from the University of Notre Dame in 1989 and 1991, respectively. He received his Ph.D. in 1995 from the University of California, Santa Barbara where he performed research on quantum devices in the InAs/AlSb heterostructure system. In 1995, he joined the IBM T. J. Watson Research Center, in Yorktown Heights, New York, as a postdoctoral researcher. From 1997 to 2006 he was a research staff member at IBM and performed research on a wide variety of SiGe devices including strained Si/SiGe MODFETs, MOSFETs and high-speed photodetectors. From 2006-2010 he served as manager of Exploratory Technology at IBM Research where his team investigated novel devices and 3D integration solutions for post 22-nm-node CMOS technology. Since 2010, he has been a Professor of Electrical and Computer Engineering at the University of Minnesota in Minneapolis, Minnesota where his research focuses on nanostructured electronic and photonic devices. Dr. Koester has authored or co-authored over 150 technical publications and conference presentations, and holds 32 United States patents.
    • Andrea L. Lacaita
       - Fellow
      Politecnico di Milano
      Piazza L. Da Vinci, 32
      Milano, Milano 20133
      Italy
      Phone 1:
      +390223996117

      Fax:
      +39022367604

      Lecture Topics:


      Phase Change Memories: technology evolution and applications

    • Souvik Mahapatra
       - Senior Member
      IIT Bombay
      Dept. of Electrical Engineering
      Maharashtra , Powai, Mumbai 400076
      India
      Phone 1:
      +91 22 2572 0408

      Lecture Topics: CMOS device reliability
    • Colin McAndrew
      Freescale Semiconductor
      2100 East Elliot Road
      MD EL-317
      Tempe, AZ 85284
      USA
      Phone 1:
      +1 480 413 3982

      Colin McAndrew (S'82-M'84-SM'90-F'04) received the Ph.D. and M.A.Sc. degrees in Systems Design Engineering from the University of Waterloo, Waterloo, Ontario, Canada, in 1984 and 1982 respectively, and the B.E. (Hons) degree in Electrical Engineering from Monash University, Melbourne, Victoria, Australia, in 1978. From 1978 to 1980 and from 1984 to 1987 he was with the Herman Research Laboratories of the State Electricity Commission of Victoria, Australia. From 1987 to 1995 he was at AT&T Bell Laboratories, Allentown PA. Since 1995 he has been with Freescale Semiconductor (formerly Motorola Semiconductor Products Sector), Tempe AZ, where he is a Fellow of the Technical Staff. His work is primarily on compact and statistical modeling and characterization for circuit simulation. He was a recipient of the Ian Langlands Medal from the Institute of Engineers of Australia in 1978, best paper awards for ICMTS in 2012 and 1993 and CICC in 2002, and the BCTM Award in 2005. He is a Fellow of the IEEE, was an editor of the IEEE Transactions on Electron Devices from 2001 through 2010, and is or has been on the technical program committees for the IEEE BCTM, ICMTS, CICC, and BMAS conferences. 
    • Vladimir Mitin
    • Hisayo S. Momose
       - Fellow
      Yokohama National University
      79-5 Tokiwadai, Hodogaya-ku
      Yokohama 240-8501
      Japan
      Phone 1:
      +81 45 339 3213

      Fax:
      +81 45 339 4456
    • Taiichi Otsuji
       - Fellow
      Tohoku University
      2-1-1 Katahira, Aoba-ku
      Sendai, Miyagi 9808577
      Japan
      Phone 1:
      81 22 217 6104

      Fax:
      81 22 217 6104
      Lecture Topics:  Recent advances in terahertz 2D electronic, optoelectronic and plasmonic devices and systems
    • Unil Perera
      Georgia State University
      Physics and Astronomy
      400 Science Annex
      Atlanta, GA 30303
      USA
      Phone 1:
      +1 404 413 6037

      Fax:
      Fax: +1 404 413 6025
      Dr. A. G. Unil Perera, obtained his bachelor's degree (Physics Special, 1st Class Honors) from the University of Colombo and MS and PhD from the University of Pittsburgh.  He is a tenured Full Professor in the Department of Physics & Astronomy at Georgia State University (GSU). His research focus is on developing novel multi band, bias and polarization selectable photon detectors covering a wide range from Ultraviolet to Far Infrared (Terahertz).  He has participated in various research workshops and has presented invited talks all over the world. He has written 6 book chapters and has contributed to the CRC dictionary of electronics, edited or co-edited several books on Infrared Detectors including a volume on thin film optical devices for a 5 volume handbook, served on NSF, DOE, and NASA review panels in addition to  reviewing numerous research proposals and papers. Dr. Perera has had over 150 technical articles published and has 5 patents to his credit. His work was featured in various Professional journals such as "Laser Focus World, Photonics Spectra, and the Reviews of Modern Physics". He was listed in Marquis WHO'S WHO in America since 2006, the Diamond Anniversary edition.  Dr. Perera founded and successfully managed a startup company commercializing detector technologies developed in his laboratory with a license from GSU. He is the recipient of several professional research and teaching awards including the Alumni Distinguished Professor award from GSU in 2010. He is a Life Fellow of the American Physical Society and a Life Fellow of the Society of Photo-Instrumentation Engineers, a Fellow of the Institute of Electrical and Electronics Engineers and a Fellow of the IEEE Photonics Society.  
    • Jason C. S. Woo
       - MOS Devices and Technology
      UCLA
      Dept. of Engineering, 56-147K ENG IV 752
      752 Charles E. Young
      Los Angeles, CA 90095-1594
      USA
      Phone 1:
      +1 310 206 3279

      Fax:
      +1 310 206 8490
      Jason C. S. Woo received the B. A. Sc. (Hons) degree in engineering science from the University of Toronto, Canada, in 1981, and the M. S. and Ph. D. degrees in electrical engineering from Stanford University in 1982 and 1987, respectively. He joined the department of electrical engineering of UCLA in 1987 and is currently a professor. He served on the IEEE IEDM program in 1991, 1992, 1996 and 1997 and was the publicity chairman in 1993. He also served on the IEEE SOI conference committee and was the technical program chairman for the conference in 1999 and the general chairman in 2000. He served on the technical committee of the VLSI Technology Symposium since 1992 and was the technical program committee co-chair/chair in 2005-2006 and the general co-chair/chair in 2007-2008. He is also a technical program committee member for the ESSDERC conference and the solid-state devices and materials conference in Japan. He received a faculty development award from IBM from 1987-1989.
      His research interests are in the physics and technology of novel device and device modeling. He has done work on low temperature device for VLSI and space applications, SOI BiCMOS and GeSi BiCMOS. Significant achievements include the analysis and fabrication of cryogenic Bipolar transistors, the identification of hot-carrier reliability failure modes at reduced temperatures, the first demonstration of GeSi quantum-well MOSFET's, and the investigation of device physics/technology for deep submicron SOI CMOS. He has also worked on tunnel junction transistors and graphene channel MOSFETs for RF and low power applications. He has authored or coauthored over 150 papers in technical journals and refereed conference proceedings in these areas.