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Finance Committee

  • Finance Committee Chair

    • Subramanian Iyer
       - Fellow
      Distinguished Chancellors Professor and IBM Fellow
      Electrical Engineering Department
      UCLA
      CA 90024
      USA
      Work:
      310 825 6913

      Cell:
      914 329 3341

      Lecture Topics: Orthogonal Scaling, embededed Memory, system scaling, 3D integration, semiconductors
  • Finance Committee Members

    • Daniel Mauricio Camacho Montejo
      Intel Corporation
      Folsom Design Center
      Folsom, CAUSA
    • Fernando Guarin
       - Fellow
      Global Foundries
      Lecture Topics: Reliability and scaling of CMOS, SiGe Reliability  
    • Meyya Meyyappan
       - Fellow
      NASA Ames Research Center
      Center for Nanotechnology
      Mailstop 229-3
      Moffett Field, CA 94035
      USA
      Phone 1:
      +1 650 604 2616

      Fax:
      +1 650 604 5244
      Lecture Topics: 1. An overview of recent developments in Nanotechnology

      2. Nanotechnology in nanoelectroncis, optoelectronics and sensor development

      3. Carbon based electronics

      4. Nanotechnology: development of practical systems and nano-micro-macro integration.
    • Hisayo S. Momose
       - Fellow
      Yokohama National University
      79-5 Tokiwadai, Hodogaya-ku
      Yokohama 240-8501
      Japan
      Phone 1:
      +81 45 339 3213

      Fax:
      +81 45 339 4456
    • Samar K. Saha
       - Senior Member
      Prospicient Devices
      Milpitas, CA 95035
      USA
      Phone 1:
      +1 408 966 5805

      Phone 2
      408-966-5805

      Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

    • Ravi M. Todi
       - MOS Devices and Technology
      Fellow
      Director, Product Management
      GlobalFoundries
      2600 Great America Way
      Santa Clara, CA 95054
      USA
      Phone 1:
      408-462-4926

      Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.