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T-ED Editor-in-Chief and Editors

  • T-ED Editor-in-Chief

    • Giovanni Ghione
       - Editor-in-Chief
      Giovanni Ghione portrait
      Politecnico di Torino
      Department of Electronics and Telecommunications
      Corso Duca degli Abruzzi 24
      Torino 10129
      Italy
      Phone 1:
      +39 011 090 4064

      Fax:
      +39 011 090 4099
      Giovanni Ghione graduated cum laude in Electronic Engineering from Politecnico di Torino, Torino Italy in 1981. He was Assistant Professor in Electromagnetic Fields since 1983, Associate Professor in Circuit Theory with Politecnico di Milano, Milano Italy since 1987, and finally Full Professor in Electronics since 1990, first with University of Catania, then again with Politecnico di Torino. His research activity has been mainly concerned with high-frequency electronics and optoelectronics. He has contributed to the physics-based modelling of compound semiconductor devices, with particular interest in the numerical noise modeling in the small- and large-signal regimes, in the thermal modeling of devices and integrated circuits, and in the modeling of widegap semiconductors devices and materials. He has also done research in the field of microwave electronics, with contributions in the modeling of passive elements, in particular coplanar components, and in the design of power MMICs. Prof. Ghione was actively engaged since 1985 in research on optoelectronic devices, with application to the modeling and design of near and far-IR photodetectors, electrooptic and electroabsorption modulators, and GAN-based LEDs. Prof. Ghione has authored or co-authored more than 300 research papers on the above subjects and five books. He is an IEEE Fellow (class 2007). He has been a member of the QPC subcommitee of IEDM in 1997-1998 and in 2006-2007 and Chair in 2008; in 2009-2010 he was the EU Arrangement Co-Chair of IEDM. From 2010 to 2015 he has been chair of the EDS Committee on Compound Semiconductor Devices and Circuits. He has been Chair of the GAAS2003 conference and he has been subcommittee chair in several SCs of the European Microwave Week. He was President of the Library System of Politecnico from 1997 to 2007. From 2007 to 2015 he was the Head of the Department of Electronics and Telecommunications of Politecnico di Torino.

  • T-ED Editors

    • Armin Aberle
       - Solid State Energy Sources
      Armin Aberle portrait
      Solar Energy Research Institute of Singapore (SERIS)
      National University of Singapore (NUS)
      7 Engineering Drive 1
      Building E3A, #06-01
      Singapore 117574
      Singapore
      Phone 1:
      (+65) 6516 4155

      Fax:
      Fax: (+65) 6775 1943
      Prof Armin ABERLE is the CEO of the Solar Energy Research Institute of Singapore (SERIS) at the National University of Singapore (NUS) and a tenured full professor in the university’s Department of Electrical and Computer Engineering. He holds BSc/MSc, PhD and Dr habil degrees in physics from German universities. His research focus is on photovoltaic materials, devices and modules. His R&D work covers the full spectrum from fundamental materials research to the industrial evaluation of advanced or novel PV technologies at the pilot line level and their transfer to industry. In his 30-year career in the PV sector he has (co)authored more than 400 papers (which have received more than 8,000 citations, h-index 43) and has been supervising more than 70 PhD students. He is an editor of IEEE Transactions on Electron Devices and an Editorial Board member of Progress in Photovoltaics and other journals. In the 1990s he established the Silicon Photovoltaics Department at the Institute for Solar Energy Research (ISFH) in Hamelin, Germany. He then worked for 10 years in Sydney, Australia as a professor for photovoltaics at the University of New South Wales (UNSW). In 2008 he joined NUS to establish SERIS, as the Deputy CEO and the Director of the Silicon PV Department. Since 2012 he is SERIS’ CEO and the Director of the institute’s Novel PV Concepts Cluster. Since 2015 he is also Director of SERIS’ Silicon Materials and Cells Cluster.
    • Uygar Avci
       - Memory Devices and Technology
      Uygar Avci portrait
      Intel Corp.
      2501 NW 229th Ave.
      MailStop# RA3-252
      Hillsboro, Oregon 97124
      United States
      Phone 1:
      607-280-4016

      Uygar E. Avci received double-major BS degrees in Physics and Electrical Engineering from Bogazici University, Istanbul, Turkey in 1999 and was the recipient of the President’s Award. He received his MS and PhD degrees in Applied Physics from Cornell University, Ithaca, NY in 2003 and 2005, respectively. During his doctorate study, he demonstrated the first experimental realization of back-side flash memory.
      He joined Intel’s Components Research in 2005, leading Floating Body Cell (FBC) memory experimental device design and scaling that demonstrated industry-leading FBC memory cells. Since 2010, he has focused on the opportunities that beyond-CMOS devices offer to either replace or augment CMOS. He has defined Tunnel-FET device and material options, its scaling roadmap and the road blocks by bridging Physics-based models with experimental material realities. His research includes circuit evaluation of novel devices comprehending the parasitics, interconnect and density to explore their potential for future products. He is currently a Principle Engineer, leading the research for charge-based beyond-CMOS devices and circuits in Intel’s Components Research department.
      Dr. Avci served as the Fundamentals Class Chair and the Short Course Chair for the International SOI Conference, in 2012 and 2013, respectively. He has ten filed patents and published twenty-nine papers in international conferences and journals.
    • Farrokh Ayazi
       - Solid State Sensors and Actuators
      Farrokh Ayazi portrait
      Georgia Institute of Technology
      85 Fifth Street NW
      Suite 448
      Atlanta, GA 30308
      USA
      Phone 1:
      404 894 9496

      Fax:
      404 385 6650
      Farrokh Ayazi is a professor in the School of Electrical and Computer Engineering and a Director of the Center for MEMS and Microsystems Technology (CMMT) at the Georgia Institute of Technology, Atlanta, GA. He received the B.S. degree in electrical engineering from the University of Tehran, Iran, in 1994, and the M.S. and Ph.D. degrees in electrical engineering from the University of Michigan, Ann Arbor, in 1997 and 2000, respectively. His research interests are in the areas of integrated micro- and nano-electromechanical resonators, inertial sensors, interface IC design for MEMS and sensors, and microfabrication techniques.

      Prof. Ayazi is a 2004 recipient of the NSF CAREER Award, the 2004 Richard M. Bass Outstanding Teacher Award (determined by the vote of the ECE senior class), the ECE Outstanding Junior Faculty Member Award, and the Georgia Tech College of Engineering Cutting Edge Research Award for 2001–2002. He is an editor for the IEEE/ASME Journal of Microelectromechanical Systems. He was the chairman of the Display, Sensors and MEMS (DSM) sub-committee at the IEEE International Electron Devices Meeting (IEDM 2011). He served on the technical program committee of the IEEE International Solid State Circuits Conference (ISSCC) for six years (2004-2009). He and his students won the best paper awards at Transducers 2011, the IEEE International Frequency Control Symposium in 2010, and IEEE Sensors conference in 2007. He will be the general co-chair of the IEEE Micro-Electro-Mechanical-Systems (MEMS) conference in 2014.

      Dr. Ayazi is the Co-Founder and Chief Technology Officer (CTO) of Qualtré Inc., a spin-out from his research Laboratory that commercializes multi-axis bulk-acoustic-wave (BAW) silicon gyroscopes and multi-degrees-of-freedom inertial sensors for personal navigation systems.
    • Muhannad Bakir
       - MOS Devices and Technology
      Muhannad Bakir portrait
      Georgia Institute of Technology
      791 Atlantic Dr NW
      Atlanta, GA 30332-0269
      United States
      Phone 1:
      404 385 6276

      Fax:
      404 894 0462
      Muhannad S. Bakir received the B.E.E. degree (summa cum laude) from Auburn University, Auburn, AL, in 1999 and the M.S. and Ph.D. degrees in electrical and computer engineering from the Georgia Institute of Technology (Georgia Tech) in 2000 and 2003, respectively.
      He is currently an Associate Professor and the ON Semiconductor Junior Professor in the School of Electrical and Computer Engineering at Georgia Tech. His areas of interest include three-dimensional (3D) electronic systems, advanced interconnection and packaging, and nanofabrication technology. He is the co-editor (with James D. Meindl) of a book entitled Integrated Interconnect Technologies for 3D Nanoelectronic Systems (Artech House, 2009) and is the author/coauthor of more than 110 journal publications and conference proceedings, 14 US patents, and the presenter of 2 conference tutorials, including an invited tutorial on 3D technology at the 2007 International Solid-State Circuits Conference (ISSCC).
      Dr. Bakir is the recipient of the 2013 Intel Early Career Faculty Honor Award, 2012 DARPA Young Faculty Award, 2011 IEEE CPMT Society Outstanding Young Engineer Award, and was an Invited Participant in the 2012 National Academy of Engineering Frontiers of Engineering Symposium. He is also a recipient of the Semiconductor Research Corporation (SRC) Inventor Recognition Awards (2002, 2005, 2009). Dr. Bakir also received twelve conference and student paper awards including one from the IEEE Custom Integrated Circuits Conference (CICC), five from the IEEE Electronic Components and Technology Conference (ECTC), and three from the IEEE International Interconnect Technology Conference (IITC).
      Dr. Bakir an Associate Editor of IEEE Transactions on Components, Packaging and Manufacturing Technology, and was a Guest Editor of the June 2011 Special Issue of IEEE Journal of Selected Topics in Quantum Electronics. He is also a member of the International Technology Roadmap for Semiconductors (ITRS) technical working group for Assembly and Packaging (AP).
    • Amine Bermak
       - Image Sensors
      Amine Bermak portrait
      Hong Kong University of Science and Technology
      Electrical and Electronic Engineering, Academic Bldg Rm 2537
      Clear Water Bay, Kowloon
      Hong Kong, Hong Kong
      Prof. Amine Bermak received the Masters and PhD degrees, both in electrical and electronic engineering (microelectronics and Microsystems), from Paul Sabatier University, Toulouse, France in 1994 and 1998, respectively. During his PhD, he was part of the Microsystems and Microstructures Research Group at a major French National Research Centre LAAS-CNRS, where he developed a 3D VLSI chip for artificial neural network classification and detection applications in a project funded by Motorola. While finalizing his PhD, he was offered a Post-doc position at the Advanced Computer Architecture group at York University – England, to work on VLSI implementation of CMM neural network for vision applications in a project funded by British Aerospace and the Yorkshire Post-office. In November 1998, he joined Edith Cowan University, Perth, Australia as a research fellow working on smart vision sensors. In January 2000, he was appointed Lecturer and promoted to Senior Lecturer in December 2001. In July 2002, he joined the Electronic and Computer Engineering Department of Hong Kong University of Science and Technology (HKUST), where he held a full Professor position and ECE Associate Head for Research and Postgraduate studies. He has also been serving as the Director of Computer Engineering as well as the Director of the Master Program in IC Design. He is also the founder and the leader of the Smart Sensory Integrated Systems Research Lab at HKUST. Currently, Prof. Bermak is with Hamad Bin Khalifa University, Qatar Foundation, Qatar. Over the last decade, Prof. Bermak has acquired a significant academic and industrial experience. He is the recipient of the 2011 University Michael G. Gale Medal for distinguished teaching (Highest University-wide Teaching Award). This gold medal is established to recognize excellence in teaching and only one recipient/year is honoured for his/her contribution. Prof. Bermak is also a two-time recipient of the “Engineering School Teaching Excellence Award" in HKUST for 2004 and 2009, respectively. Prof. Bermak has received five distinguished awards, including the “Best student paper award” at IEEE International Symposium on Circuits and systems ISCAS 2010; the 2004 “IEEE Chester Sall Award” from IEEE Consumer electronics society; the IEEE Service Award from IEEE Computer Society and the “Best Paper Award” at the 2005 International Workshop on System-On-Chip for Real-Time Applications. He has published over 250 articles in journals, book chapters and conference proceedings and designed over 30 chips. He has graduated 13 PhD and 16 MPhil students. He has served on the editorial board of IEEE Transactions on Very Large Scale Integration (VLSI) Systems and IEEE Transactions on Biomedical Circuits and Systems; the Journal of Low Power Electronics and Applications, and Frontiers in Neuromorphic Engineering. He is the guest editor of the November 2010 special issue in IEEE Transactions on Biomedical Circuits and Systems. Prof. Bermak is a Fellow of IEEE and IEEE distinguished Lecturer.
    • Marc M. Cahay
       - Emerging Technologies and Devices
      Marc M. Cahay portrait
      University of Cincinnati
      ECE
      814 Rhodes Hall
      Cincinnati, Ohio 45221
      USA
      Phone 1:
      +1 513 556 4754

      Fax:
      +1 513 556 7326
      Marc Cahay is a Professor in the Department of Electrical and Computer Engineering at the University of Cincinnati. His current research interests include modeling of nanoscale devices, spintronics, experimental investigation of mesoscopic systems, vacuum micro- and nano-electronics, and organic light-emitting diodes. He has published over 130 journal articles in these areas. With Supriyo Bandyopadhyay, he has co-authored a textbook on an Introduction to Spintronics (CRC Press, Boca Raton, 2008). He is a Fellow of ECS (Electrochemical Society), IEEE, (APS) American Physical Society, and AAAS (American Association for the Advancement of Science).
    • Richard G. Carter
       - Vacuum Electron Devices
      Richard G.  Carter portrait
      Lancaster University
      Lancaster LA1 4YR
      United Kingdom
      Phone 1:
      +44 1524 701231

      Richard G. Carter graduated in physics from the University of Cambridge in 1965 and received his PhD in electronic engineering from the University of Wales in 1968.
      From 1968 to 1972 he worked on high power travelling-wave tubes as a Development Engineer at English Electric Valve Co. Ltd.. He joined the Engineering Department of the University of Lancaster as a Lecturer in 1972 and was promoted to Senior Lecturer in 1986 and Professor of Electronic Engineering in 1996. He became an Emeritus Professor on his retirement in 2009. His research interests include electromagnetics and microwave engineering with particular reference to the theory, design and computer modelling of microwave tubes and particle accelerators. He is the author of two books and numerous papers in the field. He is currently working on a book entitled 'Microwave and RF Vacuum Electronic Power Sources' to be published by Cambridge University Press in 2018.
      Professor Carter is a Fellow of the IET, a Senior Member of IEEE and was a member of the Vacuum Electronics Technical Committee of the IEEE Electron Devices Society from 1998 to 2015. He received the IVEC 2009 Award for Excellence in Vacuum Electronics for ‘a life-long commitment to education in vacuum electronics and visionary leadership in academia and technical research in the field’. He has been an editor for T-ED since 2011.
    • Zeynep Celik-Butler
       - Solid State Device Phenomena
      Zeynep Celik-Butler portrait
      University of Texas at Arlington
      Nanofab Building
      PO Box 19072
      Arlington, TX 76019
      USA
      Zeynep Çelik-Butler is Professor of Electrical Engineering and Director of Nanotechnology Research and Teaching Facility at the University of Texas at Arlington. She received dual B.S. degrees in electrical engineering and physics from Bogaziçi University, Istanbul, Turkey, in 1982. She received the M.S. and Ph.D. degrees in electrical engineering in 1984 and 1987, respectively, from the University of Rochester. She was an IBM Pre-doctoral Fellow from 1983 to 1984, and an Eastman Kodak Pre-doctoral Fellow from 1985 to 1987. She joined the Department of Electrical Engineering at Southern Methodist University in 1987 as an Assistant Professor; was tenured and promoted to Associate Professor in 1993. Dr. Çelik-Butler was the holder of J. Lindsay Embrey Trustee Assistant Professorship from 1990 to 1993. She served as the Assistant Dean of Graduate Studies and Research from 1996 to 1999. She moved to University of Texas at Arlington in 2002.
      She served in various technical committees including 1988, 1989 IEEE-IEDM's and Annual Symposia on Electronic Materials, Processing and Characterization (1989 - 1992) and International Conference on Noise in Physical Systems and 1/f Fluctuations (1993, 1999, 2001-2009). She was the General Chair of TEXMEMS II Workshop. She was the co-Chair for the SPIE Conf. on Noise in Devices and Circuits in the Symp. on Fluctuation and Noise (FaN'2003) and the symposium co-chair for the same symposium in 2005 (FaN’2005). She has served as the Co-Chair for Focused Sessions at the 2016 and 2017 IEEE Sensors Conferences. She was an editor for Fluctuation and Noise Letters from 1999 to 2005. She currently serves in the editorial board of Journal of Nanoelectronics and Optoelectronics and is a topical editor for IEEE Sensors Journal.
      Prof. Çelik-Butler has received several awards including the University of Texas at Arlington Outstanding Research Achievement Award (2006), IEEE-Dallas Section Electron Devices Society Outstanding Service Awards (1995, 1997), IEEE-Electron Devices Society, Service Recognition Award (1995, 2009), IEEE-Electron Devices Society, Distinguished Lecturer Appreciation Award (2006), Outstanding Electrical Engineering Graduate Faculty Awards (1996, 1997, 2001), and SMU-Sigma Xi Research Award (1997).She was inducted into the Academy of Distinguished Scholars of University of Texas in 2017. Her research interests include microelectromechanical systems, multi-functional reconfigurable sensors, noise and reliability in nanoelectronic devices. She has seven awarded and three pending patents, seven book chapters, and over 200 journal and conference publications in these fields. Dr. Çelik -Butler’s research has been supported by NSF, NASA, AFOSR, ARO, Texas Higher Education Coordinating Board, SRC, Texas Instruments, Freescale Semiconductor, Laerdal Co., L-3 Communications, Legerity, ST-Microelectronics, Raytheon and Lockheed Martin Aeronautics.
      Dr. Çelik-Butler is a Fellow of IEEE, and life member of Eta Kappa Nu. She is a Distinguished Lecturer for the IEEE-Electron Devices Society.
    • Yogesh Singh Chauhan
       - Device and Process Modeling
      Yogesh Singh Chauhan portrait
      Indian Institute of Technology (IIT) Kanpur
      Department of Electrical Engineering
      Kanpur, U.P. 208016
      India
      Phone 1:
      +91-512-6797244

      Phone 2
      +91-512-6797257

      Phone 3:
      +91-8853669988 (mobile)

      Yogesh Singh Chauhan (SM'12) is an associate professor at IIT Kanpur, India. He was with Semiconductor Research & Development Center at IBM in 2007 – 2010, Tokyo Institute of Technology in 2010 and University of California Berkeley in 2010-2012. He is the lead developer of industry standard BSIM-BULK (formerly BSIM6) model. He is the co-developer of ASM-HEMT model for GaN HEMTs, which is under industry standardization at the Compact Model Coalition (CMC). He was technical program committee member of IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2013 and IEEE European Solid-State Device Research Conference (ESSDERC) 2016/2017. He is the member of IEEE-EDS Compact Modeling Committee. He received Ramanujan fellowship in 2012, IBM faculty award in 2013 and P. K. Kelkar fellowship in 2015. His research interests are characterization, modeling, and simulation of semiconductor devices.
    • Kevin J. Chen
       - Compound Semiconductor Devices
      Kevin J. Chen portrait
      Hong Kong University of Science and Technology
      Department of Electronic and Computer Engineering
      Clear Water Bay
      Kowloon,Hong Kong
      Phone 1:
      +1 852 23588969

      Prof. Kevin Chen received his B.S. degree from Peking University, Beijing, China in 1988, and PhD degree from University of Maryland, College Park, USA in 1993. His industry experience includes carrying out research and development on III-V high-speed devices in NTT LSI Laboratories, Atsugi, Japan and Agilent Technologies Inc., Santa Clara, California, USA. Prof. Chen joined Hong Kong University of Science and Technology (HKUST) in 2000, where he is currently a professor in the Department of Electronic and Computer Engineering. At HKUST, he has carried out research in wide-bandgap III-nitride devices and ICs, GaN-based MEMS devices, silicon-based microwave passive components and 3D through-silicon via interconnects, and multi-band reconfigurable microwave filters. Currently, his group is focused on developing GaN device technologies for power electronics and high-temperature electronics applications. Prof. Chen has authored or co-authored more than 280 publications in international journals and conference proceedings. He has been granted 4 US patents.
      He currently serves as a distinguished lecturer and a member in the compound semiconductor device and IC technology committee in IEEE Electron Device Society.
    • Kyung Cheol Choi
       - Display Technology
       Kyung Cheol  Choi portrait
      KAIST
      Electrical Engineering
      335 Gwahangno Yuseong-gu
      Daejeon, 305-701
      Korea
      Phone 1:
      82 42 350 3482

      Fax:
      82 42 350 8082
      Kyung Cheol Choi received the B.S. degree from the Department of Electrical Engineering, Seoul National University, Seoul Korea, in 1986, and the M.S. degree and Ph.D. degree in plasma engineering from Seoul National University in 1988 and 1993, respectively.
      From 1993 to 1999, he was involved with researching and developing display devices at the Institute for Advanced Engineering, Spectron Corporation of America, and Hyundai Electronics Industries. From 2000 to 2004, he was an Associate Professor with the Department of Electronics Engineering, Sejong University, Seoul, Republic of Korea. He was also in charge of the Information Display Research Center supported by the Korean Ministry of Information and Communication. Since February 1, 2005, he has been with the Department of Electrical Engineering, KAIST, Daejeon, Korea, where he was first an Associate Professor and is currently a KAIST Chair Professor. Since September 2007, he has been in charge of the Center for Advanced Flexible Display Convergence supported by the Korean Ministry of Education, Science, and Technology. He has also been in charge of LG Display –KAIST Cooperation center since 2010. His research interests include flexible and transparent displays, organic light-emitting diodes, and surface plasmon applications for electronic devices and displays.
      Dr. Choi is a member of the IEEE, the Society for Information Display, and the Korean Information Display Society. He had been an Associate Editor of IEEE/OSA Journal of Display Technology from 2005 to 2010.
    • Christian Monzio Compagnoni
       - Memory Devices and Technology
      Christian Monzio Compagnoni portrait
      Politecnico di Milano
      via Golgi 40
      Milano 20133
      Italy
      Phone 1:
      39 02 2399 4038

      Fax:
      39 02 2367 604
      Christian Monzio Compagnoni received the Laurea (cum laude) degree in Electronic Engineering and the Ph.D. degree in Information Technology from the Politecnico di Milano, Milan, Italy, in 2001 and 2005, respectively. Since 2006 he has been with the Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, Italy, first in the capacity of Assistant Professor (from April 2006 to March 2015) and then of Professor of Electronic Engineering (since March 2015).

      Christian Monzio Compagnoni's research activities have been devoted to the basic physics involved in the operation and in the reliability of solid-state technologies for data storage, with emphasis on deca-nanometer NOR and NAND Flash memories and on emerging memories based on discrete traps. On these topics, he authored more than 100 papers published in international journals (among which more than 30 IEEE-TED papers) and conference proceedings and he holds 2 US patents. Christian Monzio Compagnoni was the recipient of 5 awards at the IEEE-IRPS ("Outstanding paper Award" in 2008, "Best Student Paper Award" in 2012, 2013 and 2014, and "Best Poster Award" in 2015) and served in the technical program committee of the IEEE-IRPS in 2009 ("Memory" committee), 2010 ("Memory" committee) and 2016 ("Memory and product IC reliability" committee).
    • Mohamed Darwish
       - Solid State Power
      Mohamed  Darwish portrait
      MaxPower Semiconductor Inc.
      4800 Great America Parkway, Suite 205
      Santa Clara, CA 95054
      USA
      Phone 1:
      +1 408 218 2848

      Dr. Mohamed Darwish is the President and CTO of MaxPower Semiconductor, Inc., a Silicon Valley power semiconductor technology startup. He received his Ph.D degree in EE in 1981 from the University of Wales, U.K. He invented the Lateral Insulated Gate Bipolar Transistor (LIGBT) during his postdoctoral work. From 1984 to 1993, he was a Member of the Technical Staff at Bell Laboratories, where he worked on the technology development and device modeling of high voltage bipolar-CMOS-DMOS (BCDMOS) ICs and submicron CMOS technology. He led the development of a widely used device simulation mobility model. He later joined Siliconix, Inc., in Santa Clara CA, where he managed trench MOSFET and submicron BCDMOS power IC technology development. He was also the Director of Device Technology in Power Integrations, Inc., Sunnyvale CA, where he worked on the development of high voltage ICs for power supply applications. Subsequently, he was named Vice President of Technology at Fultec Semiconductor and led the development of surge protection devices. Dr. Darwish was a recipient of the Bell Laboratories Distinguished Member of Technical Staff award in 1990. He served as the Technical Program Chair for the International Symposium of Power Semiconductor Devices and ICs (ISPSD) in 2008. He also served as Chairman of the IEEE Lehigh Valley Section and the Electron Device Chapter. He served on the technical committees of the IEDM, ISPSD and BCTM conferences and has many published papers and numerous issued and pending patents.
    • David Esseni
       - MOS Devices and Technology
      David Esseni portrait
      DPIA - University of Udine
      Via delle Scienze 206
      Udine 33100
      Italy
      Phone 1:
      +39-0432-558294

      Fax:
      +39-0432-558298
      David Esseni received the Ph.D. in Electronic Engineering from the University of Bologna in 1999 and he is now Professor of Electronics at the University of Udine, Italy. During year 2000 he was a visiting scientist at Bell Labs - Lucent Technologies, Murray Hill (NJ-USA) and in year 2013 he was a Fulbright Research Scholar at the University of Notre Dame (IN, USA).
      His research interests are mainly focussed on the characterization, the modelling and the design of advanced CMOS transistors, beyond CMOS transistors and non-volatile memories.
      D.Esseni is the author of numerous papers in international journals and conferences and of several invited papers, and he is co-author of the book "Nanoscale MOS transistors: Semi-classical transport and application" (Cambridge University Press, Cambridge (UK), 2011).
      D.Esseni has served or is serving as a member of the technical committee of the International Electron Devices Meeting (IEDM), the International Reliability Physics Symposium (IRPS), the European Solid-State Device Research Conference (ESSDERC) and the International Conference on Simulation of Semiconductors Processes and Devices (SISPAD).
      D.Esseni is a Fellow of the IEEE, EDS Society since 2013 and an Editor of IEEE Transactions on Electron Devices (TED) since 2008.
    • Patrick Fay
       - Compound Semiconductor Devices
      Patrick Fay portrait
      University of Notre Dame
      Department of Electrical Engineering
      261 Fitzpatrick Hall
      Notre Dame, IN 46556
      Phone 1:
      (574) 631-5693

      Email 1:
      pfay@nd.edu

      Patrick Fay received a B.S. degree in Electrical Engineering from the University of Notre Dame in 1991, followed by the M.S. and Ph.D. degrees in Electrical Engineering from the University of Illinois at Urbana-Champaign in 1993 and 1996, respectively.
      He joined the faculty of the Department of Electrical Engineering at the University of Notre Dame in 1997, where he currently a professor as well as the director of the Notre Dame Nanofabrication Facility. His research interests include the design, fabrication, and characterization of III-V microwave and millimeter-wave electronic devices and circuits, as well as high-speed optoelectronic devices and optoelectronic integrated circuits. His research also includes the development and use of micromachining techniques for the fabrication of microwave and millimeter-wave components and packaging.
      Prof. Fay was awarded the Department of Electrical Engineering’s Outstanding Teacher award in 1998, and the Notre Dame College of Engineering’s Outstanding Teacher award in 2015. He is a Electron Device Society Distinguished Lecturer, and serves as an associate editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology and IET Electronics Letters.
    • Xiaojun Guo
       - Optoelectronics, Display, Imaging
      Xiaojun Guo portrait
      Shanghai Jiao Tong University
      Electronic Engineering, SEIEE 1-208
      800 Dongchuan Rd
      Minhang, Shanghai 200240
      China
      Phone 1:
      86 21 34207260

      Fax:
      86 21 34207260
      Xiaojun Guo is now Professor in Department of Electronic Engineering at Shanghai Jiao Tong University, China. He received the Bachelor degree from Jilin University (China) in 2002, and the Ph.D. degree from University of Surrey (UK) in 2007, both in electronic engineering. He worked on EDA for VLSIs in Department of Electronic Engineering at Tsinghua University during 2002-2003. His PhD research was on system-on-panel integration with low-temperature poly-Si TFTs. Before joining Shanghai Jiao Tong University in Aug. 2009, he had been working in Plastic Logic Ltd., Cambridge, UK, on research and development of printed polymer TFTs backplanes for flexible displays, and technology transfer for manufacturing. His group at Shanghai Jiao Tong University is now focusing on device and integration of printable thin film transistors and functional devices including displays, sensors and memories. He has authored or co-authored more than 60 technical papers in international journals and conference.
    • Anisul Haque
       - Compound Semiconductor Devices
      Anisul Haque portrait
      East West University
      Department of EEE, East West University, Aftabnagar
      43 Mohakhali C/A
      Dhaka, Bangladesh 1212
      India
      Phone 1:
      +880-171-5060000

      Prof. Anisul Haque is currently the Chairperson, Department of Electrical and Electronic Engineering at East West University. He has also served as the Dean, Faculty of Sciences and Engineering, East West University from December 2007 to December 2008. He received his PhD from Clarkson University, USA in 1996 and MS from Texas A & M University, USA in 1992. He also earned another MS from Bangladesh University of Engineering and Technology (BUET), Bangladesh in 1989 and BS from BUET in 1987. Prof. Haque started his academic career as a lecturer in the EEE Department, BUET. He was a professor in the same department until December 2005. He was a Visiting Researcher with the Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Japan, from 2002 to 2004. Prof. Haque has also been a Visiting Faculty Member with Clarkson University (1997, 1998 and 2001), University of Connecticut, Storrs (1999), and the Tokyo Institute of Technology (2005).
      Prof. Haque’s research interests are in physics, modeling, simulation, and characterization of nano-scale electronic and photonic devices. His current activities include modeling and characterization of MOSFETs on high-mobility substrates, compact modeling of MOSFETs and investigation of novel properties of strained GaInAsP low dimensional structures. He is also interested in engineering education. Prof. Haque has published around 40 papers in refereed international journals. Prof. Haque is a senior member of IEEE and is a life member of Bangladesh Physical Society. He is the founding Chair of IEEE Electron Devices Society, Bangladesh Chapter. Prof. Haque has been serving as a Distinguished Lecturer of IEEE Electron Devices Society since 2009. He is the recipient of the University Grants Commission Award 2006 for research in engineering and technology.
    • JianJang Huang
       - Optoelectronic Devices
      JianJang Huang portrait
      National Taiwan University
      Graduate Institute of Photonics and Optoelectronics
      No. 1 Sec 4 Roosevelt Rd
      Taipei City 106
      Taiwan
      Phone 1:
      886 2 336 3665

      Fax:
      886 2 2367 7467
      Prof. JianJang (J.J.) Huang received the B.S. degree in Electrical Engineering (EE) and the M.S. degree in Graduate Institute of Photonics and Optoelectronics (GIPO) from National Taiwan University (NTU), Taipei, Taiwan, in 1994 and 1996, respectively, and the Ph.D. degree in Electrical Engineering from the University of Illinois, Urbana-Champaign, in 2002. He had worked with WJ (Watkins Johnson) Communications in California, as a Staff Scientist from 2002 to 2004. He then came back to Taiwan in 2004 and is currently the professor at NTU EE and GIPO.
      Prof. Huang has been involved in the development of optoelectronic and electronic devices. He has developed a spin-coating method for nanosphere lithography (NSL) to significantly improve the performance of light emitting diodes (LEDs), solar cells and nanorod devices. His NSL approach has been licensed to several LED companies in Taiwan. He has also fabricated and characterized IGZO TFTs and the corresponding circuits on glass and flexible substrates. In recent years, his group has spent great efforts in realizing cancer cell probes using ZnO nanorods, and high-sensitivity protein sensors based on IGZO TFTs.
      Prof. Huang is a member of the Phi Tau Phi Scholastic Honor Society. He received “Wu Da-Yu” award in 2008, the most prestigious one for young researchers in Taiwan sponsored by National Science Council. And in the same year, he received the award for the most excellent young electrical engineer from the Chinese Institute of Electrical Engineering. He has served in several IPO committees in Taiwan Stock Exchange. He is currently the board director of GCS holdings in Torrance, CA, USA and the conference chair of SPIE, International Conference on Solid-State Lighting.
    • Ru Huang
       - MOS Devices and Technology
      Ru Huang portrait
      Peking University
      Institute of Microelectronics
      Beijing 100871
      China
      Phone 1:
      86 10 6275 7761

      Fax:
      86 10 6275 1789 -7761
      Ru Huang (M’98–SM’06) received the B.S. (highest honors) and M.S. degrees in electronic engineering from Southeast University, Nanjing, China, in 1991 and 1994, respectively, and the Ph.D. degree in microelectronics from Peking University, Beijing, China, in 1997.
      In 1997, she joined the faculty of Peking University, where she is currently a Professor and the Head of the Department of Microelectronics. Since 2000, she has been the leader of several State Key Research Projects of China in device research and IC fabrication technology research, including major state basic research projects, 863 national projects, the key project from National Natural Science Foundation, as well as several collaborative projects with Samsung, Intel and Fujitsu Corporations. Her research interests include nano-scaled CMOS devices, nonvolatile memory devices and new devices for RF and harsh environment applications. She holds 21 granted patents, and has authored/co-authored 4 books and over 180 papers, including many conference invited papers. Dr. Huang is the winner of the National Science Fund for Distinguished Young Scholars and many other awards in China, including the National Youth Science Award, Science and Technology Progress Award from Ministry of Information Industry and Ministry of Education. She serves as a member of IEEE Electron Devices Society (EDS) AdCom and the associate chief editor of Science in China. She was the Technical Program Co-Chair of the 7th and 9th International Conference on Solid State and Integrated Circuit Technology (ICSICT 2004 and 2008), a Far East Committee Member of the 2004 International Solid State Circuits Conference (ISSCC), and committee members of many other international conferences and symposiums.
    • Muhammad Mustafa Hussain
       - MOS Devices and Technology
      Muhammad Mustafa Hussain portrait
      Senior Member
      King Abdullah University of Science and Technology
      3824 Yarborough Ave
      Austin, TX 78744
      USA
      Phone 1:
      +1 (512) 351-3527

      Muhammad Mustafa Hussain (PhD, ECE, UT Austin, Dec 2005) is an Associate Professor of the Electrical Engineering Program of King Abdullah University of Science and Technology (KAUST), Saudi Arabia. Before joining KAUST in August of 2009, he was Program Manager Emerging Technology Program in SEMATECH, Austin where his program was supported by all the major semiconductor industries and US DARPA. He is the Fellow of American Physical Society (APS), Institute of Physics, UK, IEEE EDS Distinguished Lecturer, Editor-in-Chief of Applied Nanoscience (Springer-Nature), Editor of IEEE T-ED, and an IEEE Senior Member. He has 250+ research papers (including 20 invited reviews, 25 cover articles and 117 journal papers), 50+ issued and pending US patents. His students are serving as faculty and researchers in MIT Media Lab, UC Berkeley, Harvard, UCLA, Yale, Purdue, TSMC, KACST, KFUPM, and DOW Chemicals. Scientific American has listed his research as one of the Top 10 World Changing Ideas of 2014. Applied Physics Letters selected his paper as the Top Feature Article of 2015. He has received 40 research awards including IEEE Region 5 Outstanding Individual Achievement Award 2016, World Technology Network Award Finalist in Health and Medicine 2016, Outstanding Young Texas Exes Award 2015 (UT Austin Alumni Award), US National Academies’ Arab-American Frontiers of Sensors 2015 and 2016, DOW Chemical Sustainability Challenge Award 2012, etc. He has given more than 150 invited talks and has been highlighted extensively in the international media. His passion is to empower humanity with accessible and innovative electronic technologies.
    • Benjamin Iniguez
       - Device and Process Modelling
      Benjamin Iniguez portrait
      Senior Member
      Universitat Rovira i Virgili (URV)
      Avinguda dels Paisos Catalans 26
      Tarragona 43007
      Spain
      Phone 1:
      34 977558521

      Fax:
      34 977559605
      Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs.
      His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.
    • Eric G. Johnson
       - Optoelectronic Devices
      Eric G.  Johnson portrait
      Clemson University
      Center for Optical Materials Science and Engineering Technologies (COMSET)
      Holcombe Department of Electrical and Computer Engineering , 215 Riggs Hall
      Clemson, SC 29634-0915
      USA
      Phone 1:
      +1 864-986-1106

      Fax:
      +1 704 687 8241
      Eric Johnson received the BS degree in Physics from Purdue University in 1985 and the MS degree in electrical sciences from the University of Central Florida in 1989 and Ph.D. in electrical engineering from the University of Alabama at Huntsville in 1996.
      He joined Clemson University in 2011 as the PalmettoNet Endowed Chair in Optoelectronics in the Department of Electrical and Computer Engineering. Prior to that, he was with the University of North Carolina at Charlotte where he was a professor of optical science and electrical engineering. He also served as the director of the Center for Optoelectronics and Optical Communications. He has served as program director in the Electronics, Photonics and Device Technologies program in the Electrical, Communications and Cyber Systems Division of the National Science Foundation (2008-2010). He was an associate professor at the College of Optics and Photonics/CREOL at the University of Central Florida. Along with various other industry research, engineering and management positions, Johnson was vice president of research and development at Digital Optics Corp. He served on the Board of Directors for the International Society for Optics and Photonics (SPIE) and is an ex-officio member of the Institute of Electrical and Electronics Engineers’ Electron Devices Society Optoelectronic Devices Committee. He has been a topical editor for the Journal of Applied Optics and an associate editor of the Journal of Micro/Nanolithography, MEMS and MOEMS. He is a Fellow of the Optical Society of America, the International Society for Optics and Photonics, and a senior member of the Institute of Electrical and Electronics Engineers.
      His research spans the area of micro-optics and nano-photonics, with particular emphasis on active and passive photonic devices. Some of his major innovations include the development of methods for fabricating three-dimensional micro- and nano-optics, high-power lasers, sensors, fiber optic devices, data communications, and passive optics for spectral and polarization filtering. He has over 160 publications in the field with 13 issued patents. He was a recipient of the National Science Foundation's CAREER Award.
    • Ben Kaczer
       - Reliability
      Ben Kaczer portrait
      IMEC
      Kapeldreef 75
      Leuven B-3001
      Belgium
      Phone 1:
      32 16 281 557

      Fax:
      32 16 281 844
      Ben Kaczer is a Principal Scientist at IMEC, Belgium. He received the M.S. degree in Physical Electronics from Charles University, Prague, Czech Republic, in 1992 and the M.S. and Ph.D. degrees in Physics from The Ohio State University, Columbus, in 1996 and 1998, respectively. For his Ph.D. research on the ballistic-electron emission microscopy of SiO2 and SiC films he received the OSU Presidential Fellowship and support from Texas Instruments, Inc. In 1998 he joined the reliability group of imec, Leuven, Belgium, where his activities have included the research of the degradation phenomena and reliability assessment of SiO2, SiON, high-k, and ferroelectric films, planar and multiple-gate FETs, circuits, and characterization of Ge/III-V and MIM devices. He has co-authored more than 300 journal and conference papers, presented a number of invited papers and tutorials at international conferences, and received the 2011 IEEE EDS Paul Rappaport Award, five IEEE IRPS Best or Outstanding Paper Awards and an IEEE IPFA Best Paper Award. He has served or is serving at various functions at the IEDM, IRPS, SISC, INFOS, and WoDiM conferences. He is currently serving on the IEEE T. Electron Dev. Editorial Board.
    • Karol Kalna
       - Device and Process Modeling
      Karol Kalna portrait
      Swansea University
      College of Engineering
      Bay Campus, Crymlyn Burrows
      Swansea, Wales SA1 8EN
      United Kingdom
      Phone 1:
      +44 (0) 1792 606678

      Fax:
      +44 (0) 1792 295676
      Karol Kalna
      received M.Sc. degree (Hons.) in Solid State Physics in 1990 and Ph.D. degree in Condensed Matter Physics in 1998 from Comenius University, Bratislava, Czechoslovakia. In 1994, he joined Institute of Electrical Engineering, Bratislava, Slovakia, as a Research Scientist. He was a visiting postgraduate student in the Department of Physics, UIA University of Antwerp, Belgium, in 1994 and 1997, working on semiconductor lasers modelling. From 1999 till 2010, he was in the Department of Electronics & Electrical Engineering, University of Glasgow, U. K., where he was studying the scaling of high electron mobility transistor (HEMT) into sub-100 nm dimensions performing DC and RF analysis within ensemble Monte Carlo simulations. From 2002, he pioneered III-V MOSFETs for future digital technology studying transistor scaling with Monte Carlo simulations. From 2007 till 2012, he was an Engineering and Physical Sciences Research Council (EPSRC) Advanced Research Fellow carrying out the Monte Carlo modelling of deep sub-100 nm, ultra-thin body transistors with Si and high mobility materials in a channel. He was involved in several research projects on III-V MOSFETs for digital applications funded by ESPRC and European Community (DualLogic). In 2010, he became a Senior Lecturer and, in 2013, Associated Professor in College of Engineering, Swansea University, Wales, U. K., establishing his own Nanoelectronic Devices Computational Group. He has more than 200 publications including 81 papers in peer-review journals, 3 book chapters and more than 20 invited talks. He is a Senior Member of the IEEE. His research interests include finite element 2D and 3D Monte Carlo simulations of nanoscaled MOSFETs including FinFETs and gate-all-around nanowires with a channel based on Si, strain Si, and III-V semiconductors; quantum transport simulations using Non-Equilibrium Green's Functions; multiscale modelling coupling density functional theory calculations with Monte Carlo simulations; and simulations of GaN based HEMTs and ZnO nanowires.
    • Jinfeng Kang
       - Memory Devices and Technology
      Jinfeng Kang portrait
      Peking University
      Institute of Microelectronics
      Beijing 100871
      China
      Phone 1:
      86 10 62756745

      Jinfeng Kang received his B.S. degree in physics from Dalian University of Technology in 1984, and M.S. and Ph.D degrees in solid-state electronics & microelectronics from Peking University in 1992 and 1995 respectively. From 1996 to 1997 he worked on the new oxides applications in microelectronics at Institute of Microelectronics in Peking University as a post-doctoral fellow. In 1997 he joined the faculty first as an associate professor then professor in 2001. From 2002 to 2003, he was invited to work on high-k/metal gate technology at SNDL in National University of Singapore as a visiting professor. He is now a Full Professor of Electronics Engineering Computer Science School in Peking University. His research interest is to explore novel device concepts, structures, materials, circuits, and the system architectures for the applications of future computing and data storage systems. He has published over 200 conference and journal papers, and was speaker of more than 30 invited talks such as IEDM, ASP-DAC, MRS.
    • Hagen Klauk
       - Molecular and Organic Devices
      Hagen Klauk portrait
      Max Planck Institute for Solid State Research
      Heisenbergstr.1
      Stuttgart 70569
      Germany
      Phone 1:
      +49 711 689 1401

      Hagen Klauk (S’97–M’99) received the Diplom-Ingenieur degree in electrical engineering from Chemnitz University of Technology, Germany, in 1995 and the Ph.D. degree in electrical engineering from the Pennsylvania State University in 1999. From 1999 to 2000, he was a Postdoctoral Researcher with the Center for Thin Film Devices at the Pennsylvania State University. In 2000, he joined Infineon Technologies, Erlangen, Germany. Since 2005, he has been head of the Organic Electronics group at the Max Planck Institute for Solid State Research, Stuttgart, Germany. His research focuses on flexible electronics based on organic semiconductors, carbon nanotubes and inorganic semiconductor nanowires.
    • Joachim Knoch
       - Emerging Technologies and Devices
      Joachim Knoch portrait
      RWRTH Aachen University
      Institute of Semiconductor Electronics
      Sommerfeldstrasse 24
      Aachen 52074
      Germany
      Phone 1:
      49 241 8027891

      Fax:
      49 241 8022246
      Joachim Knoch studied physics at RWTH Aachen University, Germany and Queen Mary, University of London, UK and received the Diploma and PhD degrees in physics from RWTH Aachen University, Germany in 1998 and 2001. After postdoctoral research on InP HEMTs at the Microsystems Technology Laboratory, Massachusetts Institute of Technology, he joined the Research Center Juelich in Germany as a Research Scientist, where he investigated electronic transport in alternative field-effect transistors such as carbon nanotube FETs, ultrathin-body Schottky-barrier devices and band-to-band tunnel FETs. In December 2006 he accepted a position as permanent research staff member at IBM Zurich Research Laboratory, Switzerland, working on nanowire transistors with an emphasis on tunnel FETs. In September 2008 he was appointed associate professor of electrical engineering at TU Dortmund University, Germany and since May 2011 he has been full professor and head of the Institute of Semiconductor Electronics at RWTH Aachen University, Germany.
    • Gwan-Hyeob Koh
       - Memory Devices and Technology
      Gwan-Hyeob Koh portrait
      Samsung Electronics Company Ltd
      Memory TD Semiconductor R&D Center
      San#16 Banwol-Dong, Gyeonggi-Do
      Hwasung City 445-701
      Korea
      Phone 1:
      82-31-325-9534

      Gwan-Hyeob Koh is a principal engineer working on memory development at Semiconductor R&D Center, Samsung Electronics. He received B.S., M.S., and Ph.D. degrees in physics from Seoul National University, Seoul, Korea, in 1989, 1991 and 1996 respectively. In 1997, he joined Samsung Electronics and was involved in the development of 1Gb and 4Gb DRAM. From 2002, he has been worked on the development of next generation new memories including MRAM and PRAM. He was involved in the PRAM development from R&D to mass production stage, where his major work was related to process integration, memory device reliability, and yield enhancement. In 2007, he was visiting scholar at EE dept. of Stanford University. His current activity at Samsung Electronics is focused on the development of STT-MRAM. From 2009, he has been serving as a subcommittee member of the international conference on Solid State Devices and Materials (SSDM).
    • Lalit Kumar
       - Vacuum Electron Devices
      Lalit  Kumar portrait
      CEPTAM
      Metcalfe House, Civil Lines
      Mahtma Gandhi Road
      Delhi 110054
      India
      Phone 1:
      +91 11 23817202

      Phone 2
      +91 9483570719 (M)

      Fax:
      +1 91 1123814021
      Dr. Lalit Kumar received his Ph.D. (Physics) from Birla Institute of Technology & Science Pilani. He is the Chairman, Centre for Personnel Talent Management (CEPTAM), DRDO, Delhi and Adjunct Professor at IIT, Roorkee. He was the Director of Microwave Tube Research and Development Centre, DRDO, Bangalore (2003-15); Senior Scientist at Central Electronics Engineering Research Institute, Pilani; DAAD Research Fellow in Germany at the University of Tuebingen, Tuebingen, Technical University of Hamburg–Harburg and Philips, Hamburg; Honorary Visiting Research Fellow at Lancaster University; AICTE-INAE Distinguished Visiting Professor at IT, BHU, Varanasi. He attended Executive Education Programmes at: IIMs at Bangalore & Ahmedabad; NIAS, Bangalore and JF Kennedy School of Government, Harvard University, Cambridge. His contributions encompass: theory, simulation and engineering development of microwave tubes like: coaxial magnetron, helix- and coupled-cavity-traveling wave tubes, multi-beam klystron, vircator, relativistic magnetron, Gyrotron; microwave power modules and compact transmitters. He has coordinated several inter-laboratory and international collaborative projects. His current interests include: TWTs, high power microwaves, and vacuum microelectronic devices. He received the DRDO Agni Award for Excellence in Self-Reliance – 2003 & 2013, 37th IETE Ram Lal Wadhwa Award & Gold Medal- 2014l, IETE-IRSI (83)-2001 Award, JC Bose Memorial Award of IETE for Best Paper -1993, and Best Project Award of CEERI-1993. He is a Fellow, Indian National Academy of Engineering; Fellow IETE; Fellow and Founder President Vacuum Electron Devices and Applications (VEDA) Society, India; Senior Member, IEEE; Member: Indian Physics Association, Indian Vacuum Society, Indo–French Technical Association, Magnetics Society of India; and member-EXECOM, IEEE Delhi section; Editor, EEE Trans. on Electron Devices; He was member IEEE EDS Tech Committee on vacuum electronics; and General Chair, IEEE-IVEC-2011, Bangalore, India.
    • Ioannis (John) Kymissis
       - Molecular and Organic Devices
      Ioannis (John) Kymissis portrait
      Columbia University
      Electrical Engineering
      500 W120th Street Room 1300/MC 4712
      New York, NY 10027
      USA
      Phone 1:
      347-850-0235

      Phone 2
      212-854-4023

      Fax:
      212-932-9421
      Ioannis (John) Kymissis is an electrical engineer teaching at Columbia University. His area of specialization is solid state electronics and device fabrication, with an emphasis on thin film devices and the use of organic semiconductors in his work. He graduated with his SB, M.Eng., and Ph.D. degrees from MIT, and after working as a post-doc and at QDVison, joined the faculty at Columbia University in 2006. John has won a number of awards for his work, including the NSF CAREER award, the IEEE EDS Paul Rappaport award, the Vodaphone Americas Foundation Wireless Innovation Award, and the MIT Clean Energy Prize. He is currently serving as the editor-in-chief of the Journal of the Society for Information Display and is the general chair for the 2013 Device Research Conference.
    • Assaf Lahav
       - Image Sensors
      Assaf Lahav portrait
      Tower Semiconductor Ltd.
      Ramat Gavriel Industrial Park 20 Shaul Amor Avenue P.O 619
      Migdal Haemek 2310502
      Israel
      Phone 1:
      (O) 972-4-6506063

      Phone 2
      (M)+972 52 420 9708

      Fax:
      Fax: 972 4 654 7788
      Assaf was born in 1969 in Israel. He received his Ph. D degree from Electrical Engineering department at the Technion, Israel Institute of Technology in 2006. Assaf joined TowerJazz on 2001 and he has been the technology leader in the CMOS-Image-Sensor(CIS) R&D group at TowerJazz Semiconductor from 2002. Assaf was responsible for the image sensor 0.18 technology ramp in 0.18fab in Migdal Haemeq Israel. From 2005 to 2008 he had been developing different device and process schemes for improving pixel dynamic range, noise and sensitivity. This work enabled the transition from CCD technology to CIS in fields like cinema digital photography and Broadcasting. From 2008 Assaf had been working on global shutter pixel technology and Fast Sensors. This work in now widely used in many cameras including Time of Flight (TOF) and structured light 3D, Range Cameras for automotive applications, Industrial and traffic control inspection cameras. Assaf is currently a Senior Principal Engineer at TowerJazz with worldwide responsibly over the CIS technology offering. His current research is focused on low noise GS technology, high resolution NIR imaging and back side illumination devices. Assaf has authored or co-authored more than 30 technical papers in international journals and conference and have 9 issues patents.
    • Javier Mateos
       - Solid-State Phenomena
      Javier  Mateos portrait
      University of Salamanca
      Applied Physics Department, Pza Merced s/n
      Salamanca 37008
      Spain
      Phone 1:
      +34 677 565 427

      Fax:
      +34 923 294 584
      Javier Mateos (M’09) was born in Salamanca, Spain, in 1970. He received the B.S. and Ph.D. degrees in physics from the University of Salamanca in 1993 and 1997, respectively. Since 1993, he has been with the Department of Applied Physics of the University of Salamanca, becoming Full Professor in 2017. He was coordinator of EU project ROOTHz aiming at fabricating THz emitters and detectors using semiconductor nanodevices. In addition to THz devices, his present research interests also include the development of novel device concepts using ballistic transport and HEMTs based in both narrow and wide bandgap III–V semiconductors. He is author or co-author of more than 120 indexed journal papers and 200 conference contributions.
    • Gaudenzio Meneghesso
       - Compound Semiconductor Devices
      Gaudenzio Meneghesso portrait
      Fellow
      University of Padova
      Department of Information Engineering
      Via Gradenigo 6/B
      Padova 35131
      Italy
      Phone 1:
      +1 390498277653

      Fax:
      +1 390498277699
      Gaudenzio Meneghesso (IEEE S’95–M’97–SM’07- F’13)
      He graduated in Electronics Engineering at the University of Padova in 1992 working on the failure mechanism induced by hot-electrons in MESFETs and HEMTs. He received the Italian Telecom award for his thesis work in 1993. In 1995 he was at the University of Twente (The Netherland) with a Human Capital and Mobility fellowship (within the SUSTAIN Network) working on the dynamic behavior of protection structures against ESD. In 1997 he received the Ph.D. degree in Electrical and Telecommunication Engineering from the University of Padova working on hot-electron characterization, effects and reliability of GaAs-based and InP-based HEMT's and pseudomorphic HEMT's. Since 2011 is with University of Padova as Full Professor.
      His research interests involves mainly the Electrical characterization, modeling and reliability of several semiconductors devices: a) microwave and optoelectronics devices on III-V and III-N; b) RF-MEMS switches for reconfigurable antenna arrays; c) Electrostatic discharge (ESD) protection structures for CMOS and SMART POWER integrated circuits including ElectroMagnetic interference issues; d) organic semiconductors devices; e) photovoltaic solar cells based on various materials.
      Within these activities he published more than 600 technical papers (of which more than 80 Invited Papers and 10 best paper awards). He is reviewer of several international journals: IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEE Electronics Letters, Journal of Applied Physics, Applied Physics Letters and Semiconductor Science and Technology (IOP), Microelectronics Reliability (Elsevier).
      He served several years for the IEEE-International Electron Device Meeting (IEDM): he was in the Quantum Electronics and Compound Semiconductors sub-committee as a member in 2003, as chair in 2004 and 2005 while in 2006 and 2007 he has been in the Executive Committee as European Arrangements Chair. He is serving since 2009 in the management Committee of the IEEE International Reliability Physics (IRPS) Symposium. He is (or has been) in the steering committee of several European conferences: European Solid State Device Conference (ESSDERC), European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Heterostructures Technology Workshop (HETECH), Workshop on Compound Semiconductors Devices and Integrated Circuits held in Europe (WOCSDICE), Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD). In 2010 He entered in the IEEE EDS Adcom on different subcommittee. He has been nominated to IEEE Fellow, with the following citation: “ for contributions to the reliability physics of compound semiconductors devices”.
    • Youichi Momiyama
       - MOS Devices and Technology
      Youichi Momiyama portrait
      Fujitsu Semiconductor LTD
      1500 Mizono Tado-cho
      Kuwana 511-0192
      Japan
      Phone 1:
      81 594 24 2640

      Fax:
      81 594 24 5583
      Youichi Momiyama received the B.S. and M.S. degree in electronics engineering from Niigata University, Niigata, Japan, in 1990 and 1992, respectively.
      In 1992, he joined Fujitsu Laboratories Ltd., Atsugi, Japan, where he has been engaged in research and development of low-power and high-speed CMOS devices. He developed the deep sub-micron high-k / metal gate transistor using Ta2O5 / TiN stack in 1997, and accelerated the research and development of high-k materials as a gate stack application. After that, he was engaged in research of RF-CMOS transistor design based on the bulk and SOI technologies for SOC application. He has also been engaged in process integration of 130-45 nm LP and HP technologies at the same time.
      His present activities include process integration of 32/28 nm node LP and HP technologies, Si MOSFET scaling, device characterization and circuit-device co-design.
      Mr. Momiyama is a member of the IEEE electron devices society and solid-state circuits society.
    • Guofu Niu
       - Bipolar Devices
      Guofu Niu portrait
      Auburn University
      ECE
      200 Broun Hall
      Auburn, AL
      Phone 1:
      +1 334 844 1856

      Fax:
      +1 334 844 1888
      Guofu Niu received the B.S., M.S. and Ph.D. degrees in Electrical Engineering, all from Fudan University, Shanghai, China, in 1992, 1994, and 1997, respectively. From 1995 to 1997, he was a research assistant at City University of Hong Kong. Since 1997, he has been with Auburn University, Auburn, AL, where he is currently Professor of electrical and computer engineering. He held an Alumni Professorship from 2005 to 2010.
      His research and teaching activities include SiGe devices, RF CMOS, high-frequency on-chip characterization, noise, radiation effects, low temperature electronics, compact modeling and TCAD. He has published over 100 journal papers and over 100 conference papers, and is the co-author of the book Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, 2003 (with John Cressler), and many book chapters.
      Dr. Niu has served on committees of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (2001-2008), the IEEE Nuclear and Space Radiation Effects Conference (program committee, 2002, awards committee 2010, 2011), the IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (2004-2007, program chair 2007, general chair 2009), and the ECS SiGe Materials, Processing and Device Symposium (2004-present), and the IEEE International SiGe Technology and Device Meeting (2012).
    • Yong-Young Noh
       - Molecular and Organic Devices
      Yong-Young Noh portrait
      Dongguk University
      Energy and Materials Engineering
      26 Pil-dong 3-ga Jung-gu
      Seoul 100-715
      Korea
      Phone 1:
      82 2 2260 4974

      Prof. Yong-Young Noh is Associate Professor in the Department of Energy and Materials Engineering at Dongguk University in Seoul, Republic of Korea. He received Ph.D. in 2005 at GIST and then worked at the Cavendish Laboratory as a post-doc. (2005 – 2007). After then he worked in ETRI as a senior researcher (2008 – 2009) and in Hanbat National University as an assistant professor (2010 – 2012). Prof. Noh has been published more than 150 SCI papers and 40 patents and awarded Merck Young Scientist Award (2013), Korean President Award (2014), IEEE George E. Smith Award (2014) and the author of book entitled “Large Area Flexible Electronics” (John-Wiley VCH). His expertise is in the organic and molecular electronics, printed electronics, and flexible electronics.
    • Siddharth Rajan
       - Compound Semiconductors
      Siddharth  Rajan portrait
      Ohio State University
      Electrical Engineering
      2015 Neil Ave Rm 205
      Columbus, OH 43210
      Phone 1:
      +1 614 247 7922

      Fax:
      +1 614 292 7596
      Siddharth Rajan is Associate Professor in the Electrical and Computer Engineering and Material Science and Engineering departments at The Ohio State University, where he joined the faculty in 2008. He received his PhD in Electrical and Computer Engineering in 2006 from University of California, Santa Barbara, and has held research positions in UC Santa Barbara and GE Global Research, NY. His research interests include semiconductor devices and materials, molecular beam epitaxy, transport and heterostructure phenomena, and high frequency transistors. He has co-authored over 100 journal papers.
    • Elyse Rosenbaum
       - Device Reliability
      Elyse Rosenbaum portrait
      University of Illinois at Urbana-Champaign
      1308 W. Main Street
      Urbana-Champaign, IL 61801
      Phone 1:
      +1 217 333 6754

      Elyse Rosenbaum received the B.S. degree (with distinction) from Cornell University in 1984, the M.S. degree from Stanford University in 1985, and the Ph.D. degree from the University of California, Berkeley in 1992. All of these degrees were in electrical engineering. From 1984 through 1987, she was a Member of Technical Staff at AT&T Bell Laboratories in Holmdel, NJ. She is currently a Professor in the Department of Electrical and Computer Engineering at the University of Illinois at Urbana-Champaign.

      Dr. Rosenbaum’s present research interests include design, testing, modeling and simulation of on-chip ESD protection circuits, CDM-ESD reliability of stacked packaging and 3D-IC, design of high-speed I/O circuits, latch-up, gate dielectric degradation, and system-level ESD reliability. She has authored or co-authored over 100 technical papers. She has presented tutorials on reliability physics at the International Reliability Physics Symposium, the EOS/ESD Symposium, and the RFIC Symposium. She was the keynote lecturer at the 2004 Taiwan ESD Conference, and has given invited lectures at many universities and industrial laboratories. From 2001 through 2011 she was an editor for IEEE Transactions on Device and Materials Reliability.

      Dr. Rosenbaum has been a visiting professor at Katholieke Universiteit in Leuven, Belgium and National Chiao-Tung University in Hsinchu, Taiwan. She has been the recipient of a Best Student Paper Award from the IEDM, an Outstanding Paper Award from the EOS/ESD Symposium, a Technical Excellence Award from the SRC, an NSF CAREER award, an IBM Faculty Award, and a UIUC Bliss Faculty Scholar Award. She is a Fellow of the IEEE.
    • Andreas Schenk
       - Device and Process Modeling
      Andreas Schenk portrait
      ETH Zurich
      Integrated Systems Lab, ETH Zentrum, Gloriastrasse 35
      CH-8092
      ZurichSwitzerland
      Phone 1:
      +41 44 632-6689

      Phone 2
      Secretary: +41 44 632 4268

      Fax:
      41 44 632 1194
      Andreas Schenk received the Dipl. Phys. degree and the Ph.D. from Humboldt University in Berlin (HUB) in 1981 and 1987, respectively. From 1987 till 1991 he was working on var- ious aspects of the physics and simulation of optoelectronic devices. In 1991 he joined the Integrated Systems Laboratory (ISL) of ETH Zurich as a senior research/teaching assistant, where he qualified to give lectures at university in 1997 for ”Physics and Modeling of Microelectronic Devices”. In 2004 he became honorary professor at the ISL and is heading the Device Physics Group since then. The focus of his research is on the physics-based modeling of micro- and nanoelectronic devices, such as quantum effects in ultra-short transistors, the physics and simulation of single-electron devices, many-body effects, contacts, hetero-junctions, degradation effects, as well as transport processes like resonant and sequential tunneling, generation-recombination processes, and noise. His occupa- tional activities involve contacts to leading electronics com- panies like IBM, AMD, Toshiba, ST, and many others. His group was involved in the development of the device simula- tor DESSIS (now S-Device from Synopsys) and also developed various in-house tools for semiconductor micro- and nanode- vices like a simulator for single-electron transistors and bal- listic MOSFETs, a full-band Monte Carlo package based on moments of the inverse scattering operator of the Boltzmann equation, and a Non-equilibrium Green’s Function package for nano-scale transistors. He authored and co-authored two books and 150 papers. He is member of the German Physical Society.
    • Andries J. Scholten
       - Device and Process Modeling
      Andries J. Scholten portrait
      NXP Semiconductors
      High Tech Campus 37
      Eindhoven 5656AE The_Netherlands
      Phone 1:
      31 40 274 9685

      Fax:
      31 40 274 6276
      Andries J. Scholten received the M.Sc. and Ph.D. degrees in experimental physics from Utrecht University, The Netherlands, in 1991 and 1995, respectively.
      In 1996, he joined Philips Research Laboratories (now NXP Semiconductors), Eindhoven, The Netherlands, where he has worked on compact MOS modeling for circuit simulation, with a focus on the modelling of thermal noise and non-quasi-static effects. He has contributed to the development and industrialization of well-known compact MOSFET models such as MOS Model 9, MOS Model 11, and the world-standard PSP model. His current research is directed towards RF CMOS and HBT reliability and reliability simulation.
    • Frank Schwierz
       - Emerging Technologies and Devices
      Frank Schwierz portrait
      Technische Universitaet Ilmenau
      FG Festkorperelektronik
      PF 100565
      Ilmenau, Thuringia 98684
      Germany
      Phone 1:
      49 3677 69 3120

      Fax:
      49 3677 59 3132
      Frank Schwierz received the Dr.-Ing., and Dr. habil. degrees from Technische Universität (TU) Ilmenau, Germany, in 1986 and 2003, respectively. Presently he serves as Privatdozent at TU Ilmenau and is Head of the RF & Nano Devices Research Group. His research interests include novel device and material concepts for future transistor generations, ultra-high-speed transistors, and semiconductor device theory. Currently he is particularly interested in two-dimensional electronic materials. Dr. Schwierz is conducting research projects funded by the European Community, German government agencies, and the industry. Together with partners from academia and industry he was involved in the development of the fastest Si based transistors worldwide in the late 1990s, of Europe's smallest MOSFETs in the early 2000s, and of the worlds fastest GaN HEMT on Si in the 2010s. He has published 250 journal and conference papers including 40 invited papers and is author of three book chapters and of the books Modern Microwave Transistors (J. Wiley & Sons 2003) and Nanometer CMOS (Pan Stanford Publishing 2010). Dr. Schwierz is a Senior Member of the IEEE.
    • Huiling Shang
       - MOS Devices and Technology
      Huiling Shang portrait
      IBM Systems and Technology
      2070 Rt 52
      Mailstop 47B
      Hopewell Junction, NY 12533
      USA
      Phone 1:
      +1 914 945 1687

      Phone 2
      +1 914-455-3599 (Home)

      Fax:
      +1 914 945 2141
      Huiling Shang received her Ph.D. degree in Electrical Engineering from Lehigh University, Bethlehem, Pennsylvania, in 2001. She joined IBM T. J. Watson Research Center as a research staff member after her graduation. Her research experience includes both strained germanium and silicon-germanium channel CMOS device design and integration, transport physics in ultra thin SOI and FinFET device technologies. In 2006, she took an assignment as Technical Assistant to the Vice-President of IBM SRDC (Semiconductor Research & Development Center). Since then, she has been working in the IBM SRDC on advanced CMOS technology development. From September 2006 to June 2008, she managed the 45nm Bulk CMOS device design group. Starting in July 2008, she has been managing the 22/20nm CMOS device design group.
      She is a member of the IEEE Electron Device Society AdCom Committee and the VLSI Circuits and Technology Committee.
    • Yen-Hao Shih
       - Memory Devices and Technology
      Yen-Hao Shih portrait
      Macronix International Co., Ltd
      Foundry Business Group
      3, Creation Road III, Science Park
      Hsinchu 300Taiwan R.O.C.
      Phone 1:
      886-3-5788888 ext. 62202

      Fax:
      886-3-5637900
      Yen-Hao Shih received his B.S. and Ph. D degrees from National Taiwan University, Taipei, Taiwan, R.O.C., in 1997 and 2002, respectively, both in electrical engineering.
      In January 2002, he joined Macronix Emerging Central Lab, Macronix International Co., Ltd., as a device engineer studying and improving the reliability performance of a nitride-based Flash memory. He helped clarify several important reliability issues characteristic of that technology. He holds eleven US patents in this field.
      Since 2007, he has been assigned to the IBM/Macronix PCRAM joint project in IBM T.J. Watson Research Center, Yorktown Heights, NY, as a visiting scholar for Phase Change Memory reliability. He developed a new characterization method to determine the memory cells’ status during retention time, and he proposed a two-mechanism model to explain the array distributions in Phase Change Memories.
      His main research areas include conventional/emerging nonvolatile memories, CMOS technology, and semiconductor device physics and modeling.
    • Gregory Snider
       - Emerging Technologies and Devices
      Gregory Snider portrait
      University of Notre Dame
      Electrical Engineering
      275 Fitzpatrick Hall Room B1
      Notre Dame , IN 46556
      USA
      Phone 1:
      +1 574 631-4148

      Fax:
      +1 574 631-4393
      Gregory Snider was born in Riverside, CA. He received his BSEE degree from the California State Polytechnic University, Pomona in 1983. From 1983 to 1985, he worked for the Motorola Government Electronics Group on integrated circuit design. He received the MSEE and PhD degrees from the University of California, Santa Barbara in 1987 and 1991, where his dissertation research was on the design and fabrication of quantum point contacts. As a post-doc from 1991 to 1993 in the Applied and Engineering Physics Department at Cornell University, he worked on ballistic transport devices. From 1993 to 1994, he worked for Galileo Electro-Optics Corporation on dry-etching techniques for the fabrication of microchannel plates. In 1994 he joined the Department of Electrical Engineering at the University of Notre, serving as Assistant Professor until 2000, as Associate Professor from 2000 to 2005, and as Professor since 2005. His current topics of research concentrate on the area of nanoelectronics and fabrication, molecular electronics, and the issues of the fundamental limits of dissipation in computation. He is a senior member of the IEEE, and a member of the American Physical Society and the American Society of Engineering Education. He has authored or co-authored over 100 journal publications and over 140 conference presentations.
    • Charles Surya
       - Optoelectronics Devices
      Charles Surya portrait
      Hong Kong Polytechnic University
      Electronic and Information Engineering
      Yuk Choi Road
      Hong KongHong Kong
      Phone 1:
      852 2766 6220

      Fax:
      852 2362 4711

      Charles Surya received his PhD in Electrical Engineering from the University of Rochester in 1987. From 1987 to 1994 he was associated with the Electrical and Computer Engineering Department of Northeastern University.  He joined the Electronic and Information Engineering (EIE) Department in 1994 and remained there since.  Professor Surya’s research interests are: optoelectronic materials and devices including MOCVD growth of GaN thin films and the study of GaN-based LEDs and UV detectors; growth of organic-inorganic hybrid perovskite materials and the fabrication of advanced perovskite based photovoltaic cells; and low-frequency noise in electron devices. Presently, Professor Surya is spearheading a collaborative effort between The Hong Kong Polytechnic University and the City of Dongguan, China for the establishment of an R&D Center on the study of photovoltaic materials, devices and systems.  He became a full professor of the Department in 2002andsince 2013hewas appointed Clarea Au Endowed Professor in Energy.  Professor Surya had served in various administrative posts including Associate Head of the EIE Department (2002-2005), Associate Dean of the Faculty of Engineering (2007 – 2010) and the Acting Dean of the Faculty of Engineering (2010 – 2012) of The Hong Kong Polytechnic University.  While serving as the Associate Dean and Acting Dean of the Faculty he was responsible for the implementation of outcome-based approach in the Engineering Faculty.  From 2007 – 2013 Professor Surya was the The Hong Kong Polytechnic University representative to the Hong Kong University Grants Council Panel for Outcome-based Education to oversee the implementation of Outcome-based Approach among the Engineering Faculties in Hong Kong.  He had been active in EDS and had served in various capacities including conference co-chair and chapter chair in the past.  He is presently serving as the Chairman of the Optoelectronic Devices Technical Committee.

    • Manfred Thumm
       - Vacuum Electron Devices
      Manfred  Thumm portrait
      Karlsruhe Institute of Technology (KIT)
      Institute for Pulsed Power and Microwave Technology (IHM)
      Kaiserstr. 12
      Karlsruhe 76131
      Germany
      Phone 1:
      +1 49 721 608 23630

      Fax:
      +1 49 721 608 24874
      Manfred Thumm (SM’94-F’02) was born in Magdeburg, Germany, on August 5, 1943. He received the Dipl. Phys. and Dr. rer. nat. degrees in physics from University of Tübingen, Germany, in 1972 and 1976, respectively.
      At the University of Tübingen he was involved in the investigation of spin-dependent nuclear forces in inelastic neutron scattering. From 1972 to 1975 he was Doctoral Fellow of the Studienstiftung des deutschen Volkes. In 1976 he joined the Institute for Plasma Research in the Electrical Engineering Department of the University of Stuttgart, Germany, where he worked on RF production and RF heating of toroidal pinch plasmas for thermonuclear fusion research. From 1982 to 1990 his research activities were mainly devoted to electromagnetic theory and experimental verification in the areas of component development transmission of very high power millimeter waves through oversized waveguides and of antenna structures for RF plasma heating with microwaves. In June 1990 he became a Full Professor at the Institute for Microwaves and Electronics of the University of Karlsruhe, Germany, and Head of the Gyrotron Development and Microwave Technology Division, Institute for Technical Physics, Research Center Karlsruhe (Forschungszentrum Karlsruhe: FZK). From April 1999 to September 2011, he was the Director of the Institute for Pulsed Power and Microwave Technology, FZK, where his current research projects have been the development of high power gyrotrons, dielectric vacuum windows, transmission lines and antennas for nuclear fusion plasma heating, and industrial material processing. On October 1, 2009, the University of Karlsruhe and the FZK have merged to the Karlsruhe Institute of Technology (KIT). M. Thumm has authored/co-authored 6 books, 20 book chapters, 360 research papers in refereed scientific journals, and more than 1440 conference proceedings articles. He holds 14 patents on active and passive microwave devices.
      He is member of the IEEE EDS Vacuum Devices Technical Committee and former member of the NPSS PSAC Executive Committee, a member of the Chapter 8.6 Committee Vacuum Electronics and Displays of the Information Technical Society in German VDE (Chairman from 1996 to 1999) and a member of the German Physical Society. From 2007 to 2008 he was an EU member of the ITER Working Group on Heating and Current Drive, the vice chairman of the Scientific-Technical Council of the FZK and the vice chairman of the Founding Senate of the KIT. From 2008 to 2010 he was the deputy head of the Topic Fusion Technology of the KIT Energy. He was the General Chair of the IRMMW-THz 2004 and IEEE ICOPS 2008 Conference in Karlsruhe, Germany. He has been a member of the International Organization and Advisory Committees of many International Conferences and a member of the Editorial Boards of several ISI refereed journals. From 2003 to 2010 he was the ombudsman for upholding good scientific practice at FZK/KIT. Since 2012 he has been Editor for Vacuum Electronics Devices of IEEE Trans. Electron Devices and Distinguished Lecturer of IEEE NPSS and since 2013 KIT Distinguished Senior Fellow and member of the International Advisory Committee of Cooperative Innovation Centre of THz Science in China.
      He was awarded with the Kenneth John Button Medal and Prize 2000, in recognition of outstanding contributions to research on the physics of gyrotrons and their applications. In 2002, he was awarded the title of Honorary Doctor, presented by the St. Petersburg State Technical University, for his outstanding contributions to the development and applications of vacuum electron devices. He received the IEEE-EDS 2008 IVEC Award for Excellence in Vacuum Electronics for outstanding achievements in the development of gyrotron oscillators, microwave mode converters and transmission line components, and their applications in thermonuclear fusion plasma heating and materials processing. Together with two of his colleagues he received the 2006 Best Paper Award of the Journal of Microwave Power and Electromagnetic Energy and the 2009 CST University Publication Award. In 2010 he was awarded with the IEEE-NPSS Plasma Science and Applications Award for outstanding contributions to the development of high power microwave sources (in particular gyrotrons) for application in magnetically confined fusion plasma devices as well as for stimulation and establishing of extensive international co-operations. He is a winner of the 2010 open grant competition of the Government of the Russian Federation to support scientific research projects implemented under supervision of Leading Scientists at Russian institutions of higher education (with Novosibirsk State University). Together with A. Litvak and K. Sakamoto he has been the recipient of the EPS Plasma Physics Innovation Prize 2011 for outstanding contributions to the realization of high power gyrotrons for multi-megawatt long-pulse electron cyclotron heating and current drive in magnetic confinement nuclear fusion plasma devices. In 2012 he was awarded with the Heinrich Hertz Prize of the EnBW Foundation and the KIT for outstanding contributions to generation, transmission and mode conversion of high and very high microwave power for nuclear fusion and the HECTOR School Teaching Award in Embedded Systems Engineering.
    • Ravi M. Todi
       - MOS Devices and Technology
      Ravi M.  Todi portrait
      Fellow
      Director, Product Management
      GlobalFoundries
      2600 Great America Way
      Santa Clara, CA 95054
      USA
      Phone 1:
      408-462-4926

      Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
    • Wilman Tsai
       - MOS Devices and Technology
      Wilman Tsai portrait
      TSMC
      2851 Junction Ave
      San Jose , CA 95134
      USA
      Phone 1:
      +1 408 678 2730

      Wilman Tsai is currently Program Manager of Technology Manufacturing Group, Intel Corporation, Santa Clara, CA. He manages external device research group at Intel, responsible for research programs in advanced logics and memory devices for 10 nm node and beyond; include universities, SRC/Focus Center Research Program and industrial consortia of Sematech and IMEC.
      He chairs the Emerging Research Device forum at Intel where he manages over 40 university research programs in charged-based scaling of CMOS logic and memory devices. His device research team at Intel is currently focused on emerging research logic device using non-Si channels as Ge and InGaAs, high k dielectrics and exploratory memory devices.
      Dr. Tsai serves on senior advisory boards of Sematech and IMEC research consortia and is SRC Device Science Steering Advisory Committee chair (SACC) with Mahboob Khan Outstanding Industry Liaison Awards in 2009.
      He obtained his PhD from California Institute of Technology in 1987. He is also a visiting faculty at Stanford University, Center of Integrated Systems, and senior member of IEEE, Material Research Society and Electrochemical Society. He holds 25 US Patents and over 100 journal/conference publications.
    • Rama Venkatasubramanian
       - Thermal Management & Energy Harvesting
      Rama Venkatasubramanian portrait
      John Hopkins University
      Energy and Thermal Management Research and Exploratory Development Applied Physics Lab
      11100 Johns Hopkins Rd
      Laurel, MD 20723
      USA
      Phone 1:
      (240) 228-5164

      Dr. Venkatasubramanian (Ph.D. Rensselaer, New York, 1988; B.S. Indian Institute of Technology, Madras, India, 1983; Electrical Engineering) is dedicated to the innovation and advancement of several solid state energy conversion materials and device technologies as well as transitioning them to the commercial and defense industries. Dr. Venkatasubramanian is presently at the Johns Hopkins University, Applied Physics Lab as Team Leader for Energy and Thermal Management in the Research and Exploratory Development department. Dr. Venkatasubramanian is also the Co-Founder of Novus Energy Technologies, a spin-off company focused on energy technologies. Until April 2013, Dr. Venkatasubramanian was the Senior Research Director of the Center for Solid State Energetics at RTI International, where he directed innovative basic and applied research in thermoelectrics, photovoltaics, and optoelectronic materials and devices for solid state energy conversion applications. Dr. Venkatasubramanian is the Founder and was also the Chief Technology Officer of Nextreme Thermal Solutions, between 2004-2006, which is commercializing thin-film thermoelectric technology developed under his leadership with DARPA funding; Nextreme was acquired by Laird Technologies in Feb. 2013. Dr. Venkatasubramanian has over 115 peer-reviewed journal and conference publications, 15 issued patents, over 100 presentations in the area of thermoelectric materials and devices, photovoltaics, optoelectronics, and 5 book chapters and edited proceedings. Dr. Venkatasubramanian initiated and developed a research program focused on demonstrating the fundamental advantages of atomically engineered superlattices and other nanoscale materials; this research resulted in the first major breakthrough in the field of thermoelectrics in 40 years (Nature 2001, Nature Nanotechnology 2009), that led to hundreds of laboratories around the world working on other nanoscale thermoelectric materials. Dr. Venkatasubramanian has received two R&D 100 Awards in 2002 and 2010 for thermoelectric innovations, the Margaret Knox Excellence Award for research at RTI in 2002 and Rensselaer’s Allen B. Dumont Prize for research achievements. Dr. Venkatasubramanian was elected Fellow of the IEEE (2011) for contributions to nanoscale thermoelectrics for thermal management of electronics and energy harvesting and a Fellow of AAAS (2012) for seminal contributions to nansocale materials and devices for advanced thermoelectric devices. Dr. Venkatasubramanian has also contributed to advances in multi-junction GaAs-based photovoltaics, received a best paper award at the IEEE First World Conference on PV (1994), and his photovoltaics work has been recognized as key achievements by Department of Energy in 1995-97. Dr. Venkatasubramanian has organized several symposia and has edited proceedings in thermoelectrics, energy harvesting and nanoscale thermal transport for the American Physical Society, Materials Research Society, IEEE and other professional societies.
    • Runsheng Wang
       - MOS Devices and Technology
      Runsheng Wang portrait
      Peking University
      Institute of Microelectronics
      Beijing 100871
      China
      Phone 1:
      (+86-10) 62768773

      Runsheng Wang (S’07-M’11) received the B.S. and Ph.D. (highest honors) degrees from Peking University, Beijing, China, in 2005 and 2010, respectively.
      From November 2008 to August 2009, he was a Visiting Scholar with Purdue University, West Lafayette, IN, USA. He joined Peking University in 2010, where he is currently an Associate Professor at the Institute of Microelectronics. He has authored/coauthored 1 book, 3 book chapters, and over 100 scientific papers, including more than 30 papers published in International Electron Devices Meeting (IEDM) and Symposium on VLSI Technology (VLSI-T). He has been granted 12 US patents and 29 Chinese patents. His current research interests include nanoscale CMOS devices and characterization, circuit and device interaction, and emerging technologies for new-paradigm computing.
      Dr. Wang was awarded the IEEE EDS Early Career Award by the IEEE Electron Device Society (EDS), NSFC Award for Excellent Young Scientists by the National Natural Science Foundation of China (NSFC), Natural Science Award (First Prize) by the Ministry of Education (MOE) of China, and many other awards. He serves on the Editorial Board of Scientific Reports, and SCIENCE CHINA: Information Sciences, and has served on the Technical Program Committee of many IEEE conferences, including IEDM, IRPS, ICSICT, IPFA, INEC, etc.
    • Hei Wong
       - MOS Devices and Technology
      Hei Wong portrait
      Senior Member
      City University of Hong Kong
      Tat Chee Avenue, Kowloon
      KowloonHong Kong
      Phone 1:
      (852) 3442 7722

      Fax:
      852 2788 7791
      Hei Wong received his B.Sc. degree in electronics from the Chinese University of Hong Kong and Ph.D. in electrical and electronic engineering from the University of Hong Kong. Dr. Wong joined the faculty of the Department of Electronic Engineering at City University of Hong Kong in 1989 and is currently a full professor of the Department. He was a visiting professor of Tokyo Institute of Technology, Japan and a chair professor of Zhejiang University, China.
      Dr. Wong was the chair for the IEEE ED/SSC Hong Kong Joint Chapter during 2002-2003. He is a member of the international steering committees, technical program committees, and organizing committees for many international and local conferences. Dr. Wong has served as editor or guest editor for many journals including Microelectronics Reliability (Elsevier), IEEE Transactions on Electron Devices, IEEE Transactions on Nanotechnology. He served as Regional Editor for IEEE EDS Newsletter during 2003-2009. He has served as a Distinguished Lecturer for IEEE EDS since 2002.
      Dr. Wong has worked on MOS device modeling and characterization, hot-electron effects, low-frequency noise, thin dielectric film physics, IC process modeling and characterization, MOS integrated circuit designs, solid-state sensors. He is author or co-author of four books and over 350 papers including over 170 journal papers and dozen journal review papers. In particular, he is a co-author for the book: Guide to State-of-the-Art Electron Devices which was jointly published by Wiley and IEEE for celebrating the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society. He has presented many invited talks and keynote speeches at numerous international conferences.

      Hei Wong received his B.Sc. degree in electronics from the Chinese University of Hong Kong and Ph.D. in electrical and electronic engineering from the University of Hong Kong. Dr. Wong joined the faculty of the Department of Electronic Engineering at City University of Hong Kong in 1989 and is currently a full professor of the Department. He was a visiting professor of Tokyo Institute of Technology, Japan and a chair professor of Zhejiang University, China.
      Dr. Wong was the chair for the IEEE ED/SSC Hong Kong Joint Chapter during 2002-2003. He is a member of the international steering committees, technical program committees, and organizing committees for many international and local conferences. Dr. Wong has served as editor or guest editor for many journals including Microelectronics Reliability (Elsevier), IEEE Transactions on Electron Devices, IEEE Transactions on Nanotechnology. He served as Regional Editor for IEEE EDS Newsletter during 2003-2009. He has served as a Distinguished Lecturer for IEEE EDS since 2002.
      Dr. Wong has worked on MOS device modeling and characterization, hot-electron effects, low-frequency noise, thin dielectric film physics, IC process modeling and characterization, MOS integrated circuit designs, solid-state sensors. He is author or co-author of four books and over 350 papers including over 170 journal papers and dozen journal review papers. In particular, he is a co-author for the book: Guide to State-of-the-Art Electron Devices which was jointly published by Wiley and IEEE for celebrating the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society. He has presented many invited talks and keynote speeches at numerous international conferences.


      Hei Wong received his B.Sc. degree in electronics from the Chinese University of Hong Kong and Ph.D. in electrical and electronic engineering from the University of Hong Kong. Dr. Wong joined the faculty of the Department of Electronic Engineering at City University of Hong Kong in 1989 and is currently a full professor of the Department. He was a visiting professor of Tokyo Institute of Technology, Japan and a chair professor of Zhejiang University, China.
      Dr. Wong was the chair for the IEEE ED/SSC Hong Kong Joint Chapter during 2002-2003. He is a member of the international steering committees, technical program committees, and organizing committees for many international and local conferences. Dr. Wong has served as editor or guest editor for many journals including Microelectronics Reliability (Elsevier), IEEE Transactions on Electron Devices, IEEE Transactions on Nanotechnology. He served as Regional Editor for IEEE EDS Newsletter during 2003-2009. He has served as a Distinguished Lecturer for IEEE EDS since 2002.
      Dr. Wong has worked on MOS device modeling and characterization, hot-electron effects, low-frequency noise, thin dielectric film physics, IC process modeling and characterization, MOS integrated circuit designs, solid-state sensors. He is author or co-author of four books and over 350 papers including over 170 journal papers and dozen journal review papers. In particular, he is a co-author for the book: Guide to State-of-the-Art Electron Devices which was jointly published by Wiley and IEEE for celebrating the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society. He has presented many invited talks and keynote speeches at numerous international conferences.


      Hei Wong received his B.Sc. degree in electronics from the Chinese University of Hong Kong and Ph.D. in electrical and electronic engineering from the University of Hong Kong. Dr. Wong joined the faculty of the Department of Electronic Engineering at City University of Hong Kong in 1989 and is currently a full professor of the Department. He was a visiting professor of Tokyo Institute of Technology, Japan and a chair professor of Zhejiang University, China.
      Dr. Wong was the chair for the IEEE ED/SSC Hong Kong Joint Chapter during 2002-2003. He is a member of the international steering committees, technical program committees, and organizing committees for many international and local conferences. Dr. Wong has served as editor or guest editor for many journals including Microelectronics Reliability (Elsevier), IEEE Transactions on Electron Devices, IEEE Transactions on Nanotechnology. He served as Regional Editor for IEEE EDS Newsletter during 2003-2009. He has served as a Distinguished Lecturer for IEEE EDS since 2002.
      Dr. Wong has worked on MOS device modeling and characterization, hot-electron effects, low-frequency noise, thin dielectric film physics, IC process modeling and characterization, MOS integrated circuit designs, solid-state sensors. He is author or co-author of four books and over 350 papers including over 170 journal papers and dozen journal review papers. In particular, he is a co-author for the book: Guide to State-of-the-Art Electron Devices which was jointly published by Wiley and IEEE for celebrating the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society. He has presented many invited talks and keynote speeches at numerous international conferences.

    • Jason C. S. Woo
       - MOS Devices and Technology
      Jason C. S. Woo portrait
      UCLA
      Dept. of Engineering, 56-147K ENG IV 752
      752 Charles E. Young
      Los Angeles, CA 90095-1594
      USA
      Phone 1:
      +1 310 206 3279

      Fax:
      +1 310 206 8490
      Jason C. S. Woo received the B. A. Sc. (Hons) degree in engineering science from the University of Toronto, Canada, in 1981, and the M. S. and Ph. D. degrees in electrical engineering from Stanford University in 1982 and 1987, respectively. He joined the department of electrical engineering of UCLA in 1987 and is currently a professor. He served on the IEEE IEDM program in 1991, 1992, 1996 and 1997 and was the publicity chairman in 1993. He also served on the IEEE SOI conference committee and was the technical program chairman for the conference in 1999 and the general chairman in 2000. He served on the technical committee of the VLSI Technology Symposium since 1992 and was the technical program committee co-chair/chair in 2005-2006 and the general co-chair/chair in 2007-2008. He is also a technical program committee member for the ESSDERC conference and the solid-state devices and materials conference in Japan. He received a faculty development award from IBM from 1987-1989.
      His research interests are in the physics and technology of novel device and device modeling. He has done work on low temperature device for VLSI and space applications, SOI BiCMOS and GeSi BiCMOS. Significant achievements include the analysis and fabrication of cryogenic Bipolar transistors, the identification of hot-carrier reliability failure modes at reduced temperatures, the first demonstration of GeSi quantum-well MOSFET's, and the investigation of device physics/technology for deep submicron SOI CMOS. He has also worked on tunnel junction transistors and graphene channel MOSFETs for RF and low power applications. He has authored or coauthored over 150 papers in technical journals and refereed conference proceedings in these areas.
    • Chen Yang
       - Sensors and Actuators
      Chen Yang portrait
      Analog Devices, Inc.
      MEMS Development Group
      804 Woburn Street MS-424
      Wilmington, MA 01887-3494
      USA
      Phone 1:
      +1 (781) 937-2425

      Chen Yang received his B. S. degree and Ph.D. degree in Electronic Science and Technology from Tsinghua University, Beijing, China, in 2003 and 2008, respectively.
      He was a Postdoctoral Researcher at University of California at Berkeley from 2009 to 2010. Then he joined Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, as an Associate Professor. From 2013 to 2016, he worked as an Assistant Project Scientist at the Berkeley Sensors and Actuators Center (BSAC), University of California at Berkeley. Since 2016, he is with Analog Devices, Inc. in advanced MEMS development team. His research interests include MEMS physical and biological sensors, energy storage devices, RF passive devices and nano-materials.
      Dr. Yang was the recipients of the IEEE Electron Devices Society (EDS) Early Career Award in 2010, and the IEEE ElectronDevices Society Ph.D. Student Fellowship Award in 2007. He has been serving as TPC member of IEEE RFIC Symposium since 2012. He served as the vice chair of IEEE EDS Regions 4-6 SRC and member of the EDS Membership Committee. He was the tutorial chair of 2009 Silver Jubilee Conference on Communication Technologies and VLSI Design (CommV) at Vellore, Tamil Nadu, India, the secretary of the 3rd Japan-China-Korea Joint Conference on MEMS/NEMS (JCK MEMS/NEMS 2012) at Shanghai, China, and the secretary of 2007 International Workshop on Electron Devices and Semiconductor Technology (IEDST 2007) at Beijing, China. He was the founding Chair of IEEE Electron Devices Society Tsinghua University Student Branch Chapter at Beijing, China.
    • Darrin J. Young
       - Solid-State Sensors and Actuators
      Darrin J.  Young portrait
      University of Utah
      Bioengineering Dept. 2686 Warnock Engineering Building
      50 S. Central Campus Drive, Room 3280
      Salt Lake City, UT 84112
      USA
      Phone 1:
      +216 368 8945

      Fax:
      +1 216 368 6039
      Darrin J. Young received his B.S., M.S., and Ph.D. degrees from the Department of Electrical Engineering and Computer Sciences at University of California at Berkeley in 1991, 1993, and 1999, respectively. Dr. Young pioneered the research work in MEMS-based, high-Q, tunable capacitors and on-chip 3-D coil inductors for low phase noise RF voltage-controlled oscillator (VCO) design for wireless communication applications. His doctoral thesis work demonstrated the first RF-CMOS VCO employing on-chip high-Q passive devices achieving the stringent GSM phase noise requirements. Between 1991 and 1993, he worked at Hewlett-Packard Laboratories in Palo Alto, California, where he designed a shared memory system for a DSP-based multiprocessor architecture. Between 1997 and 1998, he worked at Rockwell Semiconductor Systems in Newport Beach, California, where he designed silicon bipolar RF analog circuits for cellular telephony applications. During this time period he was also at Lawrence Livermore National Laboratory, working on the design and fabrication of three-dimensional RF MEMS coil inductors for wireless communications. Dr. Young joined the Department of Electrical Engineering and Computer Science at Case Western Reserve University in 1999 as an assistant professor. In 2009 he joined the Electrical and Computer Engineering Department at the University of Utah as an USTAR associate professor, where he currently serves as an associate department chair. His interests include micro-electro-mechanical systems design, fabrication, and integrated circuits design for wireless sensing, biomedical implant, communication and general industrial applications as well as commercialization of wireless microsystems. He has published many technical papers in journals and conferences, and served as a technical program committee member and session chair for a number of international conferences. Dr. Young was an associate editor of the IEEE Journal of Solid-State Circuits and chair of the IEEE Electron Devices Society MEMS Committee.

    • Bo Zhang
       - Solid-State Power and High Voltage Devices
      Bo Zhang portrait
      Univ Electronic Science and Technology of China (UESTC)
      School of Microelectronic and Solid-State Electronics
      No.4, Section 2, North Jianshe Road
      Chengdu , Sichuan 610054
      China
      Phone 1:
      +86 28 8320 4101

      Fax:
      86 28 832 02569
      Prof. Bo Zhang received his B.S. in electronic engineering from Beijing Institute of Technology in 1985 and M.S. in electronic engineering from the University of Electronic Science and Technology of China (UESTC) in 1988. From 1988 to 1996, he worked on power semiconductor devices research and development at the UESTC. From 1996 to 1999, he was a Visiting Professor at Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, U.S.A., where his research activities was modern power semiconductor devices. Since returning to UESTC, in Nov. 1999, he has worked on Power Devices and Smart Power Integrated Circuits. He is currently a full Professor of UESTC and the Director of Center for Integrated Circuit, UESTC.
      His research interest has been focused on the power semiconductor technology since 1987, including power discrete devices, power management ICs and power integrated technology. He has published and presented more than 300 technical papers in scientific journals and international conferences. His work has received more than 3000 citations, with h-index=25 and i10-index=88 (Source: Google Scholar).