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2015 T-ED Golden Reviewers

The ability of the IEEE Transactions on Electron Devices to publish high quality papers has always been, and will continue to be, critically dependent upon the generosity, expertise, and dedication of the reviewers who volunteer their time for this purpose.  The Editorial Board of T-ED wish to gratefully acknowledge the individuals inside and out of the Electron Devices Society who have so selflessly contributed to this effort.

The IEEE Transactions on Electron Devices List of Golden Reviewers for 2015

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Name Institution Country
Subrahmanyam A. Indian Institute of Technology Madras India
Reza Abdolvand University of Central Florida United States
Katsumi Abe Tokyo Institute of Technology Japan
David Abe U.S. Naval Research Laboratory United States
Shela Aboud Synopsys Inc. United States
Paula Acuna Katholieke Universiteit Leuven Belgium
George Adamopoulos Lancaster University United Kingdom
Sheel Aditya Nanyang Technological University Singapore
Valery Afanas'ev University of Leuven Belgium
Samarth Agarwal IBM India India
Sapan Agarwal University of California, Berkeley United States
Anju Agrawal Delhi University India
Nidhi Agrawal The Pennsylvania State University United States
Herzl Aharoni Ben-Gurion University of the Negev Israel
Shaikh Ahmed Southern Illinois University at Carbondale United States
Dong-Ho Ahn Samsung Electronics Co. Ltd. Korea
Sujin Ahn Samsung Electronics Co. Ltd. Korea
Jong-Hyun Ahn Yonsei University Korea
Ethem Erkan Aktakka University of Michigan United States
Khairul Alam East West University Bangladesh
Syed Alam Everspin Technologies United States
Muhammad Alam Purdue University United States
Stefano Alberti Ecole Polytechnique Federale de Lausanne Switzerland
Manuel Aldegunde Rodriguez University of Warwick United Kingdom
Konstantinos Alexandrou Columbia University United States
Fabien Alibart IEMN France
Nasir  Alimardani Oregon State University United States
Philip Allen Georgia Institute of Technology United States
Cem Alper Ecole Polytechnique Federale de Lausanne Switzerland
Pietro Altermatt University of Hanover Germany
David Altman Raytheon Integrated Defense Systems United States
Joaquin Alvarado Benemérita Universidad Autónoma de Puebla Mexico
Ümit Alver University of Central Florida United States
Frank Amalraj Nagoya Institute of Technology Japan
Esteve Amat CEA-LETI France
Stefano Ambrogio Politecnico di Milano Italy
Salvatore Amoroso Gold Standard Simulations United Kingdom
Salvatore Amoroso University of Glasgow United Kingdom
Yanbin An University of Florida United States
Travis Anderson Naval Research Laboratory United States
Csaba Andras-Moritz University of Massachusetts-Amherst United States
Petru Andrei Florida State University United States
Joel Andrews Garmin International, Inc. United States
Diing Shenp Ang Nanyang Technological University Singapore
Iltcho Angelov Chalmers University of Technology Sweden
Costin Anghel Institut Superieur d'Electronique de Paris France
Roberto Annunziata STMicroelectronics Italy
Lida Ansari University College Cork Ireland
Dimitri Antoniadis Massachusetts Institute of Technology United States
Marina Antoniou University of Cambridge United Kingdom
Thomas Antonsen University of Maryland United States
Mohammad Araghchini Massachusetts Institute of Technology United States
Carter Armstrong L-3 Communications Electron Devices Division United States
David Arnold University of Florida United States
Rajan Arora Georgia Institute of Technology United States
Antonio Arreghini IMEC Belgium
Subramaniam Arulkumaran NTU Singapore
Andrey Arzhannikov Budker Institute of Nuclear Physics Russia
Tanemasa Asano Kyushu University Japan
Asen Asenov University of Glasgow United Kingdom
Shahin J Ashtiani University of Tehran Iran
Vivek Asthana Indian Institute of Technology India
Gary Atkinson Virginia Commonwealth University United States
Charles Augustine Intel Corporation United States
Brian Aull Massachusetts Institute of Technology United States
Kshitij Auluck Cornell University United States
Chris Auth Intel Corporation United States
Konstantinos Avramidis Karlsruhe Institute of Technology Germany
Suat Ay University of Idaho United States
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Giorgio Baccarani Universita di Bologna Italy
Michael Bachmann Ketek GmbH Germany
Byung Seong Bae Hoseo University Korea
Byeong-Soo Bae KAIST Korea
Hagyoul Bae KAIST Korea
In-Gyu Baek Samsung Electronics Co. Ltd. Korea
Eldad Bahat Treidel Ferdinand-Braun-Institut fĂŒr Höchstfrequenztechnik Germany
Je-Hyeong Bahk University of Cincinnati United States
Sandeep Bahl Texas Instruments Inc. United States
Seung Jae Baik KAIST Korea
Benoit Bakeroot University of Ghent Belgium
Sriram Balasubramanian GlobalFoundries United States
Kannan Balasubramanian Max-Planck-Institute for Solid-State Research Germany
Simone Balatti Politecnico di Milano Italy
Francis Balestra Grenoble INP France
Monika Balk CST AG Germany
Ayan Bandyopadhyay Central Electronics Engineering Research Institute India
Gaurab Banerjee Indian Institute of Science India
Sujit Banerjee Monolith Semiconductor United States
Kaustav Banerjee University of California at Santa Barbara United States
Sanjay Banerjee University of Texas at Austin United States
Kal Banger University of Cambridge United Kingdom
Sarunya Bangsaruntip T.J. Watson IBM Research Center United States
Avikal Bansal Indian Institute of Technology India
NZ Bao Nanjing University of Technology China
Mahmood Barangi University of Michigan United States
Leonardo Barboni UDELAR-FING Uruguay
Ranjan Barik Central Electronics Engineering Research Institute India
Larry Barnett Mountain Technology United States
Pedro Barquinha FCT-UNL Portugal
Alberto Basile Universita degli Studi di Bologna Italy
Baidyanath Basu College of Engineering & Technology India
Filip Bauwens ON Semiconductor Belgium
Bernhard Bayer University of Cambridge United Kingdom
Mehmet Baykan Intel Corporation United States
Behtash Behin-Aein GlobalFoundries United States
Ashkan Behnam University of Illinois at Urbana-Champaign United States
Enrico Bellotti Boston University United States
Alessandro Bellucci IMIP-CNR Italy
Attilio Belmonte IMEC Belgium
Didier Belot CEA-LETI France
Brahim Benbakhti Liverpool John Moores University United Kingdom
Vitor Bender Federal University of Santa Maria Brazil
Jason Benkoski Johns Hopkins University United States
Ali Benmoussa STCE / ROB Belgium
Milan Bera Indian Institute of Technology, Kharagpur India
Francesco Bertazzi Politecnico di Torino Italy
Giovanni Betti Beneventi University of Bologna Italy
Anup Bhalla United Silicon Carbide Inc. United States
K.N. Bhat Indian Institute of Science India
Sitangshu Bhattacharya Indian Institute of Information Technology-Allahabad India
Partha Bhattacharyya Indian Institute of Engineering Science and Technology India
Krishna Bhuwalka Samsung Electronics Co. Ltd. Korea
Grégory Bidal STMicroelectronics France
JérÎme Billoué LMP France
Markus Bina Institute for Microelectronics Austria
Philip Birtel Thales Group Germany
Davide Bisi University of Padova Italy
Brad Bittel Intel Corporation United States
Philippe Blaise CEA Grenoble France
Monica Blank Communications and Power Industries United States
Josef Blazej Czech Technical University in Prague Czech Republic
Ilan Bloom Saifun Semiconductors Israel
Madhur  Bobde Alpha & Omega Semiconductor United States
Claudia Bock Ruhr-Universitt Bochum United States
Marc Bocquet IMEP-CNRS/INPG France
Heinz Bohlen CPI International Inc. Switzerland
Fabrizio Bonani Politecnico di Torino Italy
Roozbeh Bonyadi The University of Warwick United Kingdom
Ernst Bosch Thales Electron Devices GmbH Germany
Gianluca Boselli Texas Instruments Inc. United States
Jan Bosiers Teledyne DALSA BV Netherlands
Gijs Bosman University of Florida United States
Arnaud Bournel Universite Paris-Sud, CNRS France
Karim Boutros HRL Laboratories LLC United States
Steven Bowers University of Virginia United States
Christian Brañas University of Cantabria Spain
Oliver Brand Georgia Institute of Technology United States
Vladimir L. Bratman Russian Acadamy of Sciences Russia
Harald Braune Max-Planck-Institut fĂŒr Plasmaphysik Germany
Henning Braunisch Intel Corporation United States
Ivor Brodie University of California at Davis United States
Jonathan Brodsky Texas Instruments Inc. United States
Simon Bubel University of California, Santa Barbara United States
Fabian Bufler Synopsys Schweiz GmbH Switzerland
Olivier Bulteel Omnivision Technologies United States
Alexander Burenkov Fraunhofer IISB Germany
Joachim Burghartz Institute for Microelectronics Stuttgart Germany
Geoffrey Burr IBM Almaden Research Center United States
Graeme Burt Lancaster University United Kingdom
Erik Bury IMEC Belgium
Heinz Busta University of Illinois at Chicago United States
Katherine Butler University of Notre Dame United States
Cyril Buttay Laboratoire AmpĂšre France
Dae-Seok Byeon Samsung Electronics Co. Ltd. Korea
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Manoj C.R. X-FAB Sarawak Sdn Bhd Malaysia
Florian Cacho STMicroelectronics France
Alina Caddemi University of Messina Italy
Marc Cahay University of Cincinnati United States
Yong Cai Chinese Aademy of Sciences China
Yimao Cai Peking University China
Jin Cai Taiwan Semiconductor Manufacturing Corp Taiwan
Jeffrey Calame Naval Research Laboratory United States
Alessandro Calderoni Micron Italy
Vittorio Camarchia Politecnico di Torino Italy
Kristy Campbell Boise State University United States
Jason Campbell National Institute of Standards and Technology United States
Joe C. Campbell University of Virginia United States
Gianluca Camuso University of Cambridge United Kingdom
Eugenio Cantatore Eindhoven University of Technology Netherlands
Yu (Kevin) Cao Arizona State University United States
Yu Cao HRL Laboratories LLC United States
Hongtao Cao Ningbo Institute of Material of Technology & Engineering, CAS China
Wei Cao University of California at Santa Barbara United States
Andrew Carlson Advanced Micro Devices United States
Fabio Carta Columbia University United States
Giorgio Casinovi Georgia Institute of Technology United States
Fritz Caspers CERN Switzerland
Alexandra Cassagnes Freescale Semiconductor, Inc. United States
Mikael Casse CEA Grenoble France
Eduardo Vieira Castro Chemnitz University of Technology Portugal
Muhsin Celik STMicroelectronics United States
Antonio Cerdeira CINVESTAV Mexico
Ahmet Ceyhan Georgia Institute of Technology United States
Ho-Young Cha Hongik University Korea
Parthasarathi Chakrabarti Banaras Hindu University India
Partha Chakraborty Georgia Institute of Technology United States
Anjan Chakravorty Indian Institute of Technology Madras India
Mansun Chan Hong Kong University of Science and Technology Hong Kong
Winston Chan SRI International United States
J Chan University of California, San Diego United States
Chi-Jung Chang Feng Chia University United States
Hsueh-Rong Chang International Rectifier United States
Kuo Pin Chang Macronix International Co. Ltd. Taiwan
Yao-Wen Chang Macronix International Co. Ltd. Taiwan
Shu-Tong Chang National Chung Hsing University Taiwan
Ting-Chang Chang National Sun Yat-Sen University Taiwan
Liang-Shun Chang National Tsing Hua University Taiwan
Meng-Fan Chang National Tsing Hua University Taiwan
Yang-Hua Chang National Yunlin University of Science and Technology Taiwan
Moon-Hwan Chang University of Maryland United States
Chao Chang Xi’an Jiaotong University China
Kuei-Shu Chang-Liao National Tsing Hua University Taiwan
Yulin Chao Intel Corporation United States
Paul Chao National Chiao Tung University Taiwan
Adrian Chasin IMEC Belgium
Shouri Chatterjee Indian Institute of Technology, Delhi India
Yogesh Chauhan Indian Institute of Technology Kanpur India
An Chen GlobalFoundries United States
Kevin Chen Hong Kong University of Science and Technology Hong Kong
Shih-Hung Chen IMEC Belgium
Yang-Yin Chen IMEC Belgium
Frederick Chen Industrial Technology Research Institute Taiwan
Yusheng Chen Industrial Technology Research Institute Taiwan
Yin-Nien Chen Institute of Electronics Taiwan
Kuo-Ju Chen Institute of Electro-Optical Engineering Taiwan
Wei-Chen Chen Macronix International Co., Ltd Taiwan
Chih-Hung Chen McMaster University Canada
Dunjun Chen Nanjing University China
Jone Chen National Cheng Kung University Taiwan
Wen-Ray Chen National Formosa University Taiwan
Kun-Ming Chen National Nano Device Laboratories Taiwan
Jian Chen National Taiwan University Taiwan
Huei-Haurng Chen Powerchip Technology Corporation Taiwan
Jing Chen Shanghai Institute of Microsystem and Information Technology China
Chia-Yu Chen Stanford University United States
Jun Chen Sun Yat-sen University China
Huanting Chen The University of Hong Kong Hong Kong
Jiezhi Chen Toshiba Corporation Japan
Kavin (Cheng-Kai) Chen University of California, Davis United States
Xingbi Chen University of Electronic Science and Technology of China China
Baile Chen University of Virginia United States
Pai-Yen Chen Wayne State University United States
Huai-Yu Cheng Macronix International Co. Ltd. Taiwan
Xinhong Cheng State Key Laboratory of Functional Materials for Informatics China
Binjie Cheng University of Glasgow United Kingdom
Kuan Yew Cheong Universiti Sains Malaysia Malaysia
Karim Cherkaoui University College Cork Ireland
Winston Chern Massachusetts Institute of Technology United States
David Chernin Science Applications International Corp. United States
Christophe Chevallier Kilopass United States
Baoyong Chi Tsinghua. University China
Jung-Lung Chiang - United States
Kuang-Hao Chiang Macronix International Co., Ltd. Taiwan
Te-Kuang Chiang National University of Kaohsiung Taiwan
Feng-Tso Chien Feng Chia University Taiwan
Wei-Chih Chien Macronix International Co., Ltd. Taiwan
Nguyen Dang Chien National Chi Nan University Taiwan
Chao-Hsin Chien National Chiao Tung University Taiwan
Albert Chin National Chiao Tung University Taiwan
Alessandro Chini UniversitĂ  di Modena e Reggio Emilia Italy
Hsien-Chin Chiu Chang Gung University Taiwan
Seongjae Cho Gachon University Korea
Hyun-Jin Cho GlobalFoundries United States
Moonju Cho IMEC Belgium
Gyu-Hyeong Cho KAIST Korea
Jonghyun Cho KAIST Korea
Won-Ju Cho Kwangwoon University Korea
Min Hee Cho University of California at Berkeley United States
Chris Choi Columbia University United States
Byong-Deok Choi Hanyang University Korea
Jong Choi Hongik University Korea
Sung-Yool Choi KAIST Korea
Byung Joon Choi Seoul National University of Science and Technology Korea
Woo Young Choi Sogang University Korea
Munkang Choi Synopsys Inc. United States
Kok Fah Choo Nanyang Technological University Singapore
Stefan Choroba DESY Germany
Hsueh-Liang Chou TSMC Taiwan
Srabanti Chowdhury Arizona State University United States
Rongming Chu HRL Laboratories LLC United States
Sheng-Yuan Chu National Cheng Kung University Taiwan
Kwo-Ray Chu National Taiwan University Taiwan
Kuan-Wei Chu National Tsing Hua University Taiwan
Wen-Ting Chu TSMC Taiwan
Daping Chu University of Cambridge United Kingdom
Ming-Yeh Chuang Texas Instruments Inc. United States
Chi On Chui University of California at Los Angeles United States
Yueh-Ting Chung National Chiao Tung University Taiwan
M.S. Chung University of Ulsan Korea
Ales Chvala Slovak University of Technology Slovakia
Fabio Cicoira Ecole Polytechnique de Montreal Canada
Cor Claeys IMEC Belgium
Martin Claus Technische UniversitÀt Dresden Germany
Sergiu Clima IMEC Belgium
Brian Cobb Holst Centre Netherlands
Cornel Cobianu Honeywell Romania Romania
Kevin Coffey University of Central Florida United States
Lorenzo Colace University of Rome Italy
Luigi Colalongo UniersitĂ  di Brescia Italy
Simone Colasanti Technical University Munich Germany
Simon Cooke Naval Research Laboratory United States
James Cooper Purdue University United States
Ignacio Cortes Instituto de Microelectronica de Barcelona Spain
Piero Cosseddu University of Cagliari Italy
Angela Coves Universidad Miguel Hernandez Spain
E Cowell III Oregon State University United States
Sorin Cristoloveanu INPG France
Jeffrey Cross Tokyo Institute of Technology Japan
Adrian Cross University of Strathclyde United Kingdom
Giovanni Crupi University of Messina Italy
Gyorgy Csaba Technical University of MĂŒnich Germany
Song Cui Stanford University United States
Ning Cui Tsinghua University China
Michael Current Current Scientific United States
Dieter Cuypers Ghent University - IMEC Belgium
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Haitao Dai Tianjin University China
Vincenzo d'Alessandro University of Naples Federico II Italy
Michael Dammann Fraunhofer IAF Germany
Morris Daniel Intel Corporation United States
Yu-Ming Danilov University of Nizhny Novgorod Russia
Francois Danneville IEMN UMR CNRS France
Suprem Das Purdue University United States
N. Das University of Calcutta India
Amitava DasGupta Indian Institute of Technology Madras India
Nandita DasGupta Indian Institute of Technology Madras India
Sudeb Dasgupta Indian Institute of Technology, Roorkee India
Sandeepan DasGupta Sandia National Laboratories United States
Subrata Datta Microwave Tube Research & Development Centre India
Suman Datta The Pennsylvania State University United States
John David The University of Sheffield United Kingdom
James Dayton Teraphysics Corp. United States
Maarten de Boer Carnegie Mellon University United States
Jean-Claude De Jaeger IEMN France
Carlo De Santi University of Padova Italy
Michelly de Souza Centro Universitario da FEI Brazil
Maria De Souza Sheffield University United Kingdom
P. Debashis Purdue University United States
M. Jamal Deen McMaster University Canada
Robin Degraeve IMEC Belgium
Marty W. DeGroot The Dow Chemical Company United States
Jesus del Alamo Massachusetts Institute of Technology United States
Nicola Delmonte University of Parma Italy
Harun Demircioglu North Carolina State University United States
Wanling Deng College of Information Science and Technology China
Jie (Thomas) Deng IBM United States
Shaozhi Deng Sun Yat-sen University China
Gregory Denisov Institute for Applied Physics Russia
Shweta Deora SEMATECH United States
Joff Derluyn EpiGaN Belgium
Yannick Deshayes IMS LAB France
Mandar Deshmukh TIFR Mumbai India
Gajanan Dessai Arizona State University United States
Amos Dexter Lancaster University United Kingdom
Sagnik Dey Texas Instruments Inc. United States
Sarit Dhar Auburn University United States
Shaoyan Di Peking University China
Angel Dieguez University of Barcelona Spain
Christof Dietrich Thales Electronic Systems GmbH Germany
Charalabos Dimitriadis Aristotle University of Thessaloniki Greece
Sima Dimitrijev Giffith University Australia
A. Thanasis Dimoulas NCSR Demokritos Greece
Yaogen Ding Chinese Academy of Sciences China
Shi-Jin Ding Fudan University China
Donald Disney GlobalFoundries Singapore
Vivek Dixit Indian Institute of Technology, Kharagpur India
Boualem Djezzar Centre de Développement des Tachnologies Avancées Algeria
Gary Dolny Fairchild Semiconductor United States
Miguel Dominguez University of Texas at Dallas United States
Simona Donati-Guerrieri Politecnico di Torino Italy
Xiaochen Dong Nanjing University of Posts and Telecommunications China
Chengyuan Dong SEIEE China
Fatma Donmezer Georgia Institute of Technology United States
Rodrigo Doria Centro UniversitĂĄrio da FEI Brazil
Richard Dorrance University of California, Los Angeles United States
Fergus Downey Analog Devices Ireland
Pei-Ying Du Macronix International Co., Ltd. Taiwan
Jiangfeng Du University of Electronic Science and Technology of China China
Monuko du Plessis University of Pretoria South Africa
Shukai Duan Southwest University China
Baoxing Duan Xidian University China
Juan Duarte University of California, Berkeley United States
Sarvesh Dubey Shri Ramswaroop Memorial University, Lucknow India
Olgierd  Dumbrajs University of Latvia Latvia
Geoffrey Dunn University of Aberdeen United Kingdom
Arka Dutta Jadavpur University India
Charvaka Duvvury ESD Consultant United States
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James Eastwood Culham Electromagnetics Ltd United Kingdom
Takashi Egawa Nagoya Institute of Technology Japan
Irina Eichwald Technische UniversitĂ€t MĂŒnchen Germany
Moshe Eizenberg Technion, Israel Institute of Technology Israel
Joanna El Husseini CEA LETI France
Kazuhiko Endo AIST Japan
Tetsuo Endoh Tohoku University Japan
Geert Eneman IMEC Belgium
Roman Engel-Herbert The Pennsylvania State University United States
Olof Engstrom Chalmers University of Technology Sweden
Tobias Erlbacher Fraunhofer IISB Germany
Axel Erlebach Synopsys Inc. Switzerland
Peter Ersland M/A-COM, Inc. United States
Takashi Eshita Fujitsu Semiconductor Japan
Magali Estrada CINVESTAV Mexico
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Ming-Long Fan National Chiao Tung University Taiwan
Tzu-Ning Fang Spansion Inc United States
Ziwei Fang TSMC Taiwan
Tian Fang University of Notre Dame United States
Guojia Fang Wuhan University China
Andrea Fantini IMEC Belgium
Farzan Farbiz Texas Instruments Inc. United States
Mohammad-Reza Fathollahi K. N. Toosi University of Technology Iran
Patrick Fay University of Notre Dame United States
Xavier Federspiel ST Microelectronics France
Jeffrey Fedison Enphase Energy, Inc. United States
Alexey Fedotov Russian Acadamy of Sciences Russia
Jinjun Feng Beijing Vacuum Electronics Research Institute China
Linrun Feng Shanghai Jiao Tong University China
Isabelle Ferain Globalfoundries United States
Giorgio  Ferrari Polietcnica di Milano Italy
Mark Field Teledyne Scientific & Imaging LLC United States
Igor Filanovsky University of Alberta Canada
Gianluca Fiori University of Pisa Italy
Gerhard Fischer IHP Germany
Massimo Fischetti University of Texas at Dallas United States
J. P. S. Fitzgerald Portland State University United States
Stefan Flachowsky GlobalFoundries Dresden Module One LLC & Co. KG Germany
Denis Flandre Université Catholique de Louvain Belgium
Dan Fleetwood Vanderbilt University United States
David Flores IMB-CNM-CSIC Spain
Kristel Fobelets Imperial College London United Kingdom
Arash Fomani University of Waterloo Canada
Xuanyao Fong Agency for Science, Technology and Research Singapore
Pascal Fonteneau STMicroelectronics France
Guglielmo Fortunato CNR-IMM Italy
Jerry Fossum University of Florida United States
S. Francis Air Force Institute of Technology United States
David Frank IBM T. J. Watson Research Center United States
Aaron Franklin Duke University United States
Joseph Friedman Universite Paris-Sud, CNRS France
Daniel Frisbie University of Minnesota United States
Wangyang Fu University of Basel Switzerland
Wenjie Fu University of Electronic Science and Technology of China China
Hiroki Fujii Renesas Electronics Corporation Japan
Shosuke Fujii Toshiba Corporation Japan
Jun Fujiki Toshiba Corporation Japan
Yoshihide Fujisaki NHK Science and Technical Research Lab Japan
Shizuo Fujita Kyoto University Japan
Shunsuke Fukami Tohoku University Japan
Hiroshi Fuketa University of Tokyo Japan
Mikhail Fuks University of New Mexico United States
Kenjiro Fukuda Yamagata University Japan
Takafumi Fukushima Tohoku University Japan
Susan Fullerton University of Notre Dame United States
Tze-Ching Fung Intel Corporation United States
Jacek Furdyna University of Notre Dame United States
Mamoru Furuta Kochi University of Technology Japan
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T. Gachovska Solantro Canada
Roberto Gaddi Cavendish Kinetics BV Netherlands
Rohit Galatage GlobalFoundries United States
Anatoly Galdetskiy FSUE Istok, Moscow Russia
David Gallagher Northrop Grumman United States
Carlos Galup-Montoro UFSC United States
Francisco Gamiz Universidad de Granada Spain
Kartik Ganapathi Intermolecular Inc. United States
Ligang Gao Arizona State University United States
Guangbo Gao International Rectifier United States
Bin Gao Peking University China
Yunfei Gao Purdue University United States
Haiyong Gao University of Connecticut United States
Marco Garampazzi Marvell Semiconductor Italy
Julian Gardner University of Warwick United Kingdom
Xavier Garros CEA Grenoble France
Lixin Ge Qualcomm Technologies Inc. United States
Rongli Geng Thomas Jefferson National Accelerator Facility United States
Jan Genoe IMEC Belgium
Alexandros Georgakilas FORTH Greece
Louis Gerrer University of Glasgow United Kingdom
Andrea Ghetti Micron Semiconductor Italia Italy
GĂ©rard Ghibaudo IMEP-LAHC France
Massimo Ghioni Politecnico di Milano Italy
Mahdi Gholizadeh Ferdowsi University of Mashhad Iran
Seyed Saleh Ghoreishi Nour Branch, Islamic Azad University Iran
Sanjay Ghosh Central Electronics Engineering Research Institute India
Tushar Ghosh E2V Technologies United Kingdom
Bahniman Ghosh University of Texas at Austin United States
Matthew Gilbert University of Illinois United States
Benito Gimeno University of Valencia Spain
Naum Ginzburg Russian Acadamy of Sciences Russia
Gino Giusi University of Messina Italy
Mikhail Yu. Glyavin Russian Acadamy of Sciences Russia
Bruce Gnade University of Texas at Dallas United States
Elena Gnani University of Bologna Italy
Antonio Gnudi University of Bologna Italy
Michele Goano Politecnico di Torino Italy
Akira Goda Micron Technology United States
Andres Godoy University of Granada Spain
Ashish Goel Broadcom Corporation United States
Joon-Chul Goh Samsung Electronics Co. Ltd. Korea
Amirhossein  Goldan SUNY Stony Brook United States
Xiao Gong NUS Singapore
Songbin Gong University of Illinois United States
Tomas Gonzalez Universidad de Salamanca Spain
Jung-Suk Goo GlobalFoundries United States
Chakravarthy Gopalan Adesto Technologies United States
Wolfgang Gös Technical University of Vienna Austria
Harald Gossner Intel Corporation Germany
Tetsuya  Goto Tohoku University Japan
Bogdan Govoreanu IMEC Belgium
Wladyslaw Grabinski Ecole Polytechnique Federale de Lausanne Switzerland
Ralf Granzner Technische UniversitÀt Ilmenau Germany
Tibor Grasser Technical University of Vienna Austria
Olivier Gravand LETI-CEA France
Mariagrazia Graziano Politecnico di Torino Italy
David Green Silvaco United Kingdom
Jim Greer University College Cork Ireland
Zachery Griffith Teledyne Scientific and Imaging United States
Patrick Grillot Philips Lumileds Lighting United States
Guido Groeseneken IMEC Belgium
Daniel Grogg TE Connectivity Solutions GmbH Switzerland
Xiaoxiong Gu IBM United States
Jiangjiang Gu Intel Corporation United States
Jane Gu University of California, Davis United States
Xuefeng Gu University of California, Los Angeles United States
Ximeng Guan IBM United States
Xiaotong Guan University of Electronic Science and Technology of China China
Hoel Guerin Ecole Polytechnique Federale de Lausanne Switzerland
Diego Guerra Arizona State University United States
Ivor Guiney University of Cambridge United Kingdom
Yufeng Guo Nanjing University of Posts and Telecommunications China
Xiaojun Guo Shanghai Jiao Tong University China
Jing Guo University of Florida United States
Sanjeev Gupta CSIR-Central Electronics Engineering Research Institute India
D Gupta Indian Institute of Technology India
Radhey Gupta Maharaja Agrasen Institute of Technology India
Sumeet Kumar Gupta The Pennsylvania State University United States
Subhadra  Gupta University of Alabama United States
Vinay Gupta University of Delhi India
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Woo seok Ha LG Display Korea
Tae-Jun Ha The University of Texas at Austin United States
Predrag Habas EM Microelectronic-Marin SA Switzerland
K M Masum Habib University of Virginia United States
Sameer Haddad Spansion LLC United States
Amr Haggag Freescale Semiconductor, Inc. United States
Herwig Hahn RWTH-Aachen University Germany
Steve Hall The University of Liverpool United Kingdom
Anders Hallén Royal Institute of Technology (KTH) Sweden
Masafumi Hamaguchi Toshiba Corporation Japan
Michael Hamilton Auburn University United States
Genquan Han Chongqing University China
Baoguo Han Dalian University of Technology China
Shu-Jen Han IBM T. J. Watson Research Center United States
Jin-Woo Han NASA Ames Research Center United States
Sang Youn Han Samsung Electronics Co. Ltd. Korea
Yan Han Zhejiang University China
Masami Hane Renesas Electronics Corporation Japan
Pavan Hanumolu University of Illinois at Urbana-Champaign United States
Yue Hao Xidian University China
Shinsuke Harada National Institute of Advanced Industrial Science and Technology Japan
MD. Tanvir Hasan University of Fukui Japan
Pouya Hashemi IBM Corporation United States
Takashi Hashimoto Hitachi, Ltd. Japan
Tamotsu Hashizume Hokkaido University Japan
Soha  Hassoun Tufts University United States
Nikolaos Hastas Aristotle University of Thessaloniki Greece
Tetsuo Hatakeyama National Institute of Advanced Industrial Science and Technology Japan
Reiji Hattori Kyushu University Japan
Yoshihiro Hayashi Renesas Electronics Corporation Japan
Majeed Hayat University of New Mexico United States
Jin He Peking University China
Ganesh Hegde Samsung Semiconductor Inc United States
Dawei Heh TSMC Taiwan
Jason Heikenfeld University of Cincinnati United States
Frederik Heinz Synopsys Schweiz GmbH Switzerland
Bahman Hekmatshoar IBM T. J. Watson Research Center United States
Eric Heller Air Force Research Laboratory United States
Geert Hellings Katholieke Universiteit Leuven Belgium
Gertjan Hemink SanDisk Japan
Robert Henderson University of Edinburgh United Kingdom
Jonathan Hennek Harvard University United States
Jaeyeong Heo Chonnam National University Korea
Juan Hernandez Technical University of Denmark Denmark
Johannes Herrnsdorf Institute of Photonics United Kingdom
Reinhard Herzer Semikron Elektronik GmbH &Co KG Germany
Karl Hess University of Illinois at Urbana-Champaign United States
Gaspard Hiblot STMicroelectronics France
Oliver Hilt FBH Berlin Germany
Aya Hino Kobe Steel United States
Atsushi Hiraiwa Waseda University Japan
Hidenori Hiramatsu Tokyo Institute of Technology Japan
Toshiro Hiramoto University of Tokyo Japan
Takashi Hirao Kochi University of Technology Japan
Testuya Hirose Kobe University Japan
Digh Hisamoto Hitachi, Ltd. Japan
ChiaHua Ho National Nano device Laboratories Taiwan
Chih-Hsiang Ho Purdue University United States
Chris Hobbs SEMATECH United States
Brad Hoff Air Force Research Laboratory United States
Jean-Philippe Hogge Ecole Polytechnique Federale de Lausanne Switzerland
Steve Holland Lawrence Berkeley National Laboratory United States
Mark Holtz Texas State University United States
Sung-Kyu  Hong Dongguk University Korea
Yongtaek Hong Seoul National University Korea
Patrick Hopkins University of Virginia United States
Naoto Horiguchi IMEC Belgium
Hideki Horii Samsung Electronics Co. Ltd. Korea
Susumu Horita Japan Advanced Institute of Science and Technology Japan
Peter Horoyski Communications and Power Industries, CPI Canada Canada
Hideo Hosono Tokyo Institute of Technology Japan
Tuo-Hung Hou National Chiao Tung University Taiwan
Phil Hower Texas Instruments Inc. United States
Judy Hoyt Massachusetts Institute of Technology United States
Yi-Hsuan Hsiao Macronix International Co. Ltd. Taiwan
Chih-Chang Hsieh Macronix International Co., Ltd. Taiwan
E. R. Hsieh National Chiao Tung University Taiwan
Min-Che Hsieh National Tsing Hua University Taiwan
Alice Pei-Shan Hsieh University of Cambridge United Kingdom
Jy-Shan  Hsu Chung Yuan Christian University Taiwan
Yu-Jen Hsu Columbia University United States
Tzu-Hsuan (Bruce) Hsu Macronix International Co. Ltd. Taiwan
Shawn Hsu National Tsing Hua University Taiwan
Chih-Chieh Hsu National Yunlin University of Science and Technology Taiwan
Weida Hu Chinese Academy of Sciences China
Guangxi Hu Fudan University China
Miao Hu Hewlett-Packard Laboratories United States
Vita Pi-Ho Hu Institute of Electronics Taiwan
Chih-Wei Hu Macronix International Co. Ltd. Taiwan
Hsin-Hui Hu National Taipei University of Technology Taiwan
Mengyuan Hua Hong Kong University of Science and Technology Hong Kong
Daming Huang Fudan University China
Peng Huang Chinese Academy of Sciences China
Sen Huang Chinese Academy of Sciences China
Junkai  Huang Jinan University China
Juinn-Dar Huang National Chiao Tung University Taiwan
Chih-Fang Huang National Tsing Hua University Taiwan
Qianqian Huang Peking University China
Tsung-Ching Huang TSMC United States
Mengbing Huang University at Albany, SUNY United States
Weiguo Huang University of Massachusetts-Amherst United States
Shihua Huang Zhejiang Normal University China
Greg Hughes Dublin City University Ireland
Charles Hunt University of California, Davis United States
Muhammad Hussain King Abdullah University of Science and Technology Saudi Arabia
Hanipah Hussin Universiti Teknologi Mara Malaysia
Chi-Sun Hwang ETRI Korea
Jun-Dar Hwang National Chiayi University Taiwan
Hyunsang Hwang Pohang University of Science and Technology Korea
Yoosang Hwang Samsung Electronics Co. Ltd. Korea
J. G. Hwu National Taiwan University Taiwan
Jenn-Gwo Hwu National Taiwan University Taiwan
Jaroslav Hynecek ISETEX Inc. United States
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Giuseppe Iannaccone UniversitĂ  di Pisa Italy
Daniele Ielmini Politecnico di Milano Italy
Petar Igic Swansea University United Kingdom
Hiroyuki Ikeda Sony Mobile Display Corporation Japan
Keiji Ikeda Toshiba Corporation Japan
Stefan Illy Karlsruhe Institute of Technology Germany
Kiju Im Samsung Mobile Display Korea
Benjamin Iñiguez Universitat Rovira i Virgili Spain
Hiroshi Inokawa Shizuoka University Japan
Atsuki Inoue Fujitsu Laboratories Japan
Satoshi Inoue Japan Advanced Institute of Science and Technology Japan
Dimitris Ioannou George Mason University United States
Andrea Irace University of Naples Federico II Italy
Masahiro Ishida Panasonic Corporation Japan
Ryoichi Ishihara Delft University of Technology Netherlands
Syed Islam University of Tennessee United States
Ahmad Islam Wright-Patterson Air Force Base United States
Mark Itzler Princeton Lightwave Inc. United States
R. Lawrence Ives Calabazas Creek Research Inc. United States
Masaya Iwamoto Agilent Technologies United States
S. Sundar Kumar Iyer Indian Institute of Technology Kanpur India
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Robert Jackson Calabazas Creek Research Inc. United States
Warren Jackson HP Labs United States
Arne Jacob Technische UniversitÀt Hamburg-Harburg Germany
Blake Jacquot The Aerospace Corporation United States
Faisal Jahan University of South Carolina United States
Vibhor Jain IBM United States
Abhinav Jain INanobio LLC United States
S. E.   Jamali Mahabadi University of Maryland United States
Srivatsava Jandhyala International Institute of Information Technology India
Jae-Hyung Jang Gwangju Institute of Science and Technology Korea
Yong Ho Jang LG Display Korea
Krishna Jayant Cornell University United States
Srikant Jayanti North Carolina State University United States
Farzan Jazaeri Swiss Federal Institute of Technology in Lausanne (EPFL) Switzerland
Aaron Jensen SLAC National Accelerator Center United States
Sanghun Jeon Korea University Korea
Jaewook Jeong Chungbuk National University Korea
Jae Kyeong Jeong Inha University Korea
Paul Jespers Université Catholique de Louvain Belgium
Rashmi Jha University of Toledo United States
Hee-Sauk Jhon Seoul National University Korea
Zhigang Ji Liverpool John Moores University United Kingdom
Yuan Ji Shanghai University China
Rui Jia Chinese Academy of Sciences China
Hao Jiang Center for Solid-state Light System China
Jie Jiang Central South University China
Li Jiang Dalhousie University Canada
Yu-Long Jiang Fudan University China
Qimeng Jiang Hong Kong University of Science and Technology Hong Kong
Xiang-Wei Jiang Chinese Academy of Sciences China
Zizhen Jiang Stanford University United States
Jianzhuang Jiang University of Science and Technology Beijing China
G. F. Jiao Fudan University China
Deng Jie Qualcomm Technologies Inc. United States
Leslie Jimison Johns Hopkins University United States
Gaoshan Jing Tsinghua University China
Li Jiun-Yun National Taiwan University Taiwan
Sung Hyun Jo Crossbar Inc. United States
Yogesh Joglekar IUPUI United States
Jungwoo Joh Texas Instruments Inc. United States
Tom Johansen Technical University of Denmark Denmark
Robert Johansson OmniVision Technologies Norway
Joachim John IMEC Belgium
Jeffrey Johnson IBM United States
Josep  Jornet University at Buffalo United States
Pooran Joshi Oak Ridge National Laboratory United States
Saumil Joshi University of Colorado United States
Colin Joye Naval Research Laboratory United States
Hyunsung Jung Samsung Electronics Co. Ltd. Korea
Christoph Jungemann RWTH Aachen University Germany
Malgorzata Jurczak IMEC Belgium
Daniel Jurgen University of Maryland United States
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M. Zahangir Kabir Concordia University Canada
Tetsu Kachi Toyota Central R&D Labs., Inc. Japan
Karan Kacker Microsoft Corp United States
Takao Kageyama Kyushu Institute of Technology Japan
Karol Kalna Swansea University United Kingdom
Sriram Kalpat Qualcomm Technologies Inc. United States
Yoshinari Kamakura Osaka University Japan
Ajay K. Kambham GlobalFoundries United States
Nando Kaminski University of Bremen Germany
Edwin Chihchuan Kan Cornell University United States
Shun Kanai Tohoku University Japan
Toru Kanazawa Tokyo Institute of Technology Japan
Yukihiro Kaneko Panasonic Corporation Japan
Jungwon Kang Dankook University Korea
In Man Kang Kyungpook National University Korea
Jinfeng Kang Peking University China
Bongkoo Kang Pohang University of Science and Technology Korea
Seung Kang Qualcomm Technologies Inc. United States
Daehwan Kang Samsung Electronics Co. Ltd. Korea
Chang Yong Kang SEMATECH United States
Chyuan Kao Chang Gung University Taiwan
Robert Kaplar Sandia National Labs United States
Golnaz Karbasian University of Notre Dame United States
Muhammed A. Karim University of California, Berkeley United States
Karim Karim University of Waterloo Canada
S Karmakar Intel Corporation United States
Sergey Karpov STR Soft Russia
Norihide Kashio NTT Photonics Laboratories Japan
Walter Kasparek University of Stuttgart Germany
Makoto Kasu Saga University Japan
Vsevolod Katkov Joint Institute for Nuclear Research, Moscow Russia
Howard Katz Johns Hopkins University United States
Hiroshi Kawarada Waseda University Japan
Jakub Kedzierski Massachusetts Institute of Technology United States
Andreas Kerber GlobalFoundries United States
Vishal Kesari Microwave Tube Research & Development Centre India
Ali Khakifirooz Spansion Inc. United States
Ata Khalid University of Glasgow United Kingdom
Sourabh Khandelwal University of California, Berkeley United States
Mohammad Khayer Intel Corporation United States
Bahman Kheradmand-Boroujeni Technische UniversitÀt Dresden Germany
Elizabeth Kho X-FAB Sarawak Sdn Bhd Malaysia
Prof. Saiful I. Khondaker University of Central Florida United States
Sina Khorasani Sharif University of Technology Iran
Martin Kiik Teledyne DALSA Canada
Valeriya Kilchytska Catholic University of Louvain Belgium
Chang-Hyun Kim Gwangju Institute of Science and Technology Korea
SangBum Kim IBM T. J. Watson Research Center United States
Raseong Kim Intel Corporation United States
YH Kim KAIST Korea
Sungho Kim KAIST Korea
Dong Myong Kim Kookmin University Korea
Sang-Hyeon Kim Korea Institute of Science and Technology Korea
Taehoon Kim Micron Technology United States
Tony Kim Nanyang Technological University Singapore
Soo Youn Kim Purdue University United States
SungGeun Kim Purdue University United States
Namseog Kim Qualcomm Technologies Inc. United States
Sarah Eunkyung  Kim Seoul National University of Science and Technology Korea
Young-Chul Kim Sun Moon University Korea
SoYoung Kim Sungkyunkwan University Korea
Yong-Hoon Kim Sungkyunkwan University Korea
Do Kim University of Florida United States
Jong Hyun Kim University of Washington United States
Hyun Jae Kim Yonsei University Korea
Tsunenobu Kimoto Kyoto University Japan
Mutsumi Kimura Ryukoku University Japan
Ya-Chin King National Tsing Hwa University Taiwan
Wiley Kirk University of Texas at Dallas United States
Koji Kita The University of Tokyo Japan
Masatoshi Kitamura Kobe University Japan
Isik Kizilyalli Avogy Inc United States
Gerhard Klimeck Purdue University United States
Alexander Kloes Technische Hochschule Mittelhessen Germany
Irena Knezevic University of Wisconsin-Madison United States
Dietmar Knipp Jacobs University Bremen Germany
Joachim Knoch RWTH Aachen University Germany
Dieter Knoll IHP Germany
Kalyan Koley Jadavpur University India
R. B. Konda Norfolk State University United States
Hans Koops HaWilKo GmbH Germany
Martin Kordesch Ohio University United States
Guenter Kornfeld Kornfeld Plasma & Microwave Consulting Germany
Lars Korte Helmholtz-Zentrum Berlin Germany
Hans Kosina Indian Institute of Technology Madras India
Juha Kostamovaara University of Oulu Finland
Murali Kota IBM India
Anil Kottantharayil Indian Institute of Technology, Bombay India
Alexei Koudymov RSM Electron Power United States
Dimitrios Kouvatsos NCSR Demokritos Greece
Sergei Koveshnikov Intel Corporation United States
Richard Kowalczyk L-3 Communications Electron Devices Division United States
Abhinav Kranti Indian Institute of Technology, Bombay India
Yakov Krasik Technion, Israel Institute of Technology Israel
Franz Kreupl Technische Universitat Munchen Germany
Tony Krier University of Lancaster United Kingdom
Sriram Krishnamoorthy The Ohio State University United States
Cliff Krowne Naval Research Laboratory United States
Pei-Cheng Ku University of Michigan United States
Martin Kuball University of Bristol United Kingdom
A. V. Kuchuk NASU United States
Kelin Kuhn Intel Corporation United States
Jaydeep Kulkarni Intel Corporation United States
Vachan Kumar Georgia Institute of Technology United States
Anil Kumar GlobalFoundries United States
Lalit Kumar MTRDC, DRDO India
Arunandan Kumar National Physical Laboratory India
Manoj Kumar University Institute of Technology India
Hideya Kumomi Tokyo Institute of Technology Japan
Souvik Kundu Indian Institute of Technology India
Iwao Kunishima Toshiba Corporation Japan
Cheng Kuo National Chiao Tung University Taiwan
JĂĄn KuzmĂ­k Slovak Academy of Sciences Slovakia
Masaaki Kuzuhara University of Fukui Japan
Duygu Kuzum Stanford University United States
Hyuck-In Kwon Chung-Ang University Korea
Yongwoo Kwon Hongik University Korea
Kee-Won Kwon Sungkyunkwan University Korea
Jang-Yeon Kwon Yonsei University Korea
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Giuseppe La Rosa IBM Microelectronics Division United States
Andrea Lacaita Politecnico di Milano Italy
Sheng-Chih Lai Macronix International Co. Ltd. Taiwan
Wei-Chih Lai National Cheng Kung University Taiwan
Peter Lai The University of Hong Kong Hong Kong
Gerhard Landauer Universitat Politecnica de Catalunya Spain
Jean Larour Ecole Polytechnique France
George Latsas University of Athens Greece
Yue Lau University of Michigan United States
Luca Laurin Micron Semiconductor Italia Italy
Jean-Pierre Leburton University of Illinois at Urbana-Champaign United States
Seung Hee Lee Chonbuk National University Korea
Joshua Lee City University of Hong Kong Hong Kong
Gi-Dong Lee Dong-A University Korea
Ching-Sung Lee Feng Chia University Taiwan
Byoung Hun Lee Gwangju Institute of Science and Technology Korea
Sungjae Lee IBM Microelectronics Division United States
Hengyuan Lee Industrial Technology Research Institute Taiwan
Seung-Woo Lee Kyung Hee University Korea
Ho-Seong Lee Kyungpook National University Korea
Ming-Hsiu Lee Macronix International Co. Ltd. Taiwan
Dai-Ying Lee Macronix International Co., Ltd. Taiwan
Feng-Ming Lee Macronix International Co., Ltd. Taiwan
Siwoo Lee Micron Technology United States
Ching-Ting Lee National Cheng Kung University Taiwan
Yao-Jen Lee National Nano Device Laboratories Taiwan
Chie-In Lee National Sun Yat-Sen University Taiwan
Ya-Ju Lee National Taiwan Normal University Taiwan
Minhung Lee National Taiwan Normal University Taiwan
Kung-Yen Lee National Taiwan University Taiwan
Jae-Duk Lee Samsung Electronics Co. Ltd. Korea
Jae-Kyu Lee Samsung Electronics Co. Ltd. Korea
Jung Hyuk Lee Samsung Electronics Co. Ltd. Korea
Sung-chul Lee Samsung Electronics Co. Ltd. Korea
Rinus Lee SEMATECH United States
Jong-Ho Lee Seoul National University Korea
Sin-Doo Lee Seoul National University Korea
Ho-Nyeon Lee Soonchunhyang University Korea
Hojin Lee Soongsil University Korea
Ming-Lun Lee Southern Taiwan University of Science and Technology Taiwan
Jack Lee The University of Texas at Austin United States
Yeonghun Lee Tokyo Institute of Technology Japan
Sungsik Lee University College London United Kingdom
Sungmin Lee University of Southern California United States
Steffen Lehmann TU Dresden Germany
Thomas Lei Ford Motor Company United States
Max Lemme University of Siegen Germany
Wei Lin Leong Institute of Materials Research and Engineering Singapore
Yann Leroy ICube France
Gregory Leung University at California Los Angeles United States
Kalle Levon New York University United States
Minga Li Cornell University United States
Qiliang Li George Mason University United States
Guijun Li Hong Kong University of Science and Technology Hong Kong
Jing Li IBM T. J. Watson Research Center United States
Jinwang Li Japan Advanced Institute of Science and Technology Japan
Ming Li Microelectronics Institute China
Yiming Li National Chiao Tung University Taiwan
Chi-Kang Li National Taiwan University Taiwan
Jiantong Li Royal Institute of Technology (KTH) Sweden
Xifeng Li Shanghai University China
Xiaohua Li Southeast University China
Hong Li University of California at Santa Barbara United States
Wilson Li University of California, Los Angeles United States
Helen Li University of Pittsburgh United States
Qingqing Liang Maxlinear, Inc. United States
Gengchiau Liang National University of Singapore Singapore
Lingyan Liang Ningbo Institute of Material of Technology & Engineering, CAS China
Renrong Liang Tsinghua University China
Dong Liang University of Wisconsin-Madison United States
Ming-Han Liao National Taiwan University Taiwan
Huailin Liao Peking University China
Ernesto Limiti UniversitĂ  di Roma Tor Vergata Italy
Chung-Hsun Lin IBM United States
Chang-Yu Lin Industrial Technology Research Institute Taiwan
Yu-Yu Lin Macronix International Co., Ltd. Taiwan
Jianqiang Lin Massachusetts Institute of Technology United States
Chih-Lung Lin National Cheng Kung University Taiwan
Chia-Feng Lin National Chung Hsing University Taiwan
Yu-Shyan Lin National Dong Hwa University Taiwan
Chii-Ruey Lin National of Taipei University of Technology Taiwan
Chun-Yu Lin National Taiwan Normal University Taiwan
Tai Yuan Lin National Taiwan Ocean University Taiwan
Ching Fuh Lin National Taiwan University Taiwan
Chrong-Jung Lin National Tsing Hua University Taiwan
Xinnan Lin Peking University Shenzhen Graduate School China
Ming-Chieh Lin Tech-X United States
Yuankun Lin University of North Texas United States
Erik Lind Lund University Sweden
Barry Paul Linder IBM United States
Chris Lingwood Lancaster University United Kingdom
Eike Linn RWTH Aachen University Germany
Dimitri Linten IMEC Belgium
Antoine Litty STMicroelectronics France
Yongxun Liu AIST Japan
Hongyu Liu CNT-TFT United States
Xi Liu Georgia Institute of Technology United States
Ming Liu Chinese Academy of Sciences China
Qi Liu Chinese Academy of Sciences China
Huichu Liu Intel Corporation United States
Haitao Liu Micron Technology United States
K. W. Liu National Cheng Kung University Taiwan
Po-Tsun Liu National Chiao Tung University Taiwan
Chi-Wee Liu National Taiwan University Taiwan
Lifeng Liu Peking University China
Xiaoyan Liu Peking University China
Jian Liu RF Micro Devices United States
Changze Liu Samsung Electronics Co. Ltd. Korea
Lilin Liu Sun Yat-Sen University China
Yang Liu Sun Yat-sen University China
Zhao Jun Liu The Hong Kong University of Science and Technology Hong Kong
Fei Liu The University of Hong Kong Hong Kong
Tong Liu TowerJazz Semiconductor United States
Guanxiong Liu University of California, Riverside United States
Chunliang  Liu Xi'an Jiaotong University China
Hongxia Liu Xidian University China
Tsu-Jae Liu King University of California, Berkeley United States
Daniel Lizzit University of Udine Italy
Jose M. Llorens Consejo Superior de Investigaciones CientĂ­ficas Spain
Guo-Qiang (Patrick) Lo Institute of Microelectronics Singapore
Roger Lo Macronix International Co., Ltd. Taiwan
Saurabh Lodha Indian Institute of Technology, Bombay India
Wei-Yip Loh International SEMATECH United States
Salvatore Lombardo CNR-IMM Italy
Shibing Long Chinese Academy of Sciences China
Neophytos Lophitis University of Cambridge United Kingdom
Richard Lossy Ferdinand-Braun-Institut fĂŒr Höchstfrequenztechnik Germany
Zhichao Lu GlobalFoundries United States
Lei Lu Hong Kong University of Science and Technology Hong Kong
Darsen Lu IBM T. J. Watson Research Center United States
Tao-Cheng Lu Macronix International Co. Ltd. Taiwan
Hai Lu Nanjing University China
Tien-Chang Lu National Chiao Tung University Taiwan
Yicheng Lu Rutgers University United States
Yang Lu Samsung Semiconductor. Inc United States
Peng Lu University of California, Los Angeles United States
Yang Lu University of Florida United States
Wei Lu University of Michigan United States
John Luginsland Air Force Office of Scientific Research United States
Mathieu Luisier ETH Zurich Switzerland
Konstantin Lukin Institute for Radiophysics and Electronics Ukraine
Wsevolod Lundin Ioffe Physical-Technical Institute of the Russian Academy of Sciences Russia
Mark Lundstrom Purdue University United States
Linbao Luo Hefei University of Technology China
Jirun Luo Institute of Electronics China
Jack Luo Zhejiang University China
Björn LĂŒssem Kent State University United States
Josef Lutz Chemnitz University of Technology Germany
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Tae-Young Ma Gyeongsang National University Korea
Fei Ma Jiaotong University China
Zhenqiang (Jack) Ma University of Wisconsin-Madison United States
MB Machado Instituto Federal Sul-riograndense Brazil
Kartikeyan Machavaram Indian Institute of Technology Roorkee India
Morgan Madec UniversitĂ© de Strasbourg, Parc d’innovation France
Koichi Maezawa University of Toyama Japan
Peter Magnee NXP Semiconductors Netherlands
Paolo Magnone University of Padova Italy
Ravi  Mahajan Intel Corporation United States
Santanu Mahapatra Indian Institute of Science India
Hamid Mahmoodi San Francisco State University United States
Ali Mahmoudi University of Tehran Iran
Andreas Mai IHP Germany
Siddheswar Maikap Chang Gung University Taiwan
Leszek Majewski The University of Manchester United Kingdom
Supriyo Maji Purdue University United States
Kausik Majumdar Indian Institute of Science India
B. Gunnar Malm Royal Institute of Technology (KTH) Sweden
Volodymyr Malyutenko Lashkaryov Institute of Semiconductor Physics Ukraine
Bahtiyar Mamedov Gaziosmanpasa University Turkey
Cristell Maneux Université de Bordeaux France
Vladimir Manuilov Nizhny Novgorod State University Russia
Olivier Marcelot ISAE France
Saulius  Marcinkevicius Royal Institute of Technology (KTH) Sweden
Denis Marcon IMEC Belgium
Matthew Marinella Sandia National Laboratories United States
Ognian Marinov McMaster University Canada
Tobin Marks Northwestern University United States
François Martin CEA-LETI France
Javier Martin-Martinez Universitat Autonoma de Barcelona Spain
Rodrigo Martins New University of Lisbon Portugal
P Martyniuk Military University of Technology Poland
Meishoku Masahara National Institute of Advanced Industrial Science and Technology Japan
Massimo Mastrangeli Katholieke Universiteit Leuven Belgium
Takeyoshi Masuda Sumitomo Electric Industries, Ltd. Japan
Muhammad Masuduzzaman Purdue University United States
Amrita Masurkar Columbia University United States
Javier Mateos Universidad de Salamanca Spain
Peter Matheu University of California, Berkeley United States
Jay Mathews University of Dayton United States
Mallory Mativenga Kyung Hee University Korea
Tomoko Matsudai Toshiba Corporation Japan
Takashi Matsukawa AIST Japan
Shoun Matsunaga Tohoku University Japan
Kazuya Matsuzawa Toshiba Corporation Japan
Hans Juergen Mattausch Hiroshima University Japan
Anas Mazady University of Connecticut United States
Colin McAndrew Freescale Semiconductor, Inc. United States
Michael McConnell University of Notre Dame United States
Vincent McGahay GlobalFoundries United States
William McMahon GlobalFoundries United States
Joe McPherson Texas Instruments Inc. United States
Farid Medjdoub IEMN France
Mahsa Mehrad Semnan University Iran
Saumitra Mehrotra Maxim Integrated United States
Jaladhi Mehta North Carolina State University United States
Gaudenzio Meneghesso Universita di Padova Italy
Matteo Meneghini University of Padova Italy
William Menninger L-3 Communications Electron Technologies, Inc. United States
Roberto Menozzi University of Parma Italy
Stephan Menzel Forschungszentrum Julich GmbH Germany
Abdelkarim Mercha IMEC Belgium
Steven Merchant Texas Instruments Inc. United States
Xiangshui Miao Huazhong University of Science and Technology China
Carmine Miccoli Politecnico di Milano Italy
Loukas Michalas University of Athens Greece
Luca De  Michielis Ecole Polytechnique Federale de Lausanne Switzerland
Neal Mielke Intel Corporation United States
Shinji Migita AIST Japan
José Millàn IMB-CNM-CSIC Spain
Florent Miller Airbus Group France
Jerome Miller Clemson University United States
Kyeong-Sik Min Kookmin University Korea
Takeo Minari MANA-NIMS Japan
Bradley  Minch Franklin W. Olin College of Engineering United States
Mauro Mineo E2V Technologies United Kingdom
Umesh Mishra University of California at Santa Barbara United States
Abha Misra Indian Institute of Science India
Mohamed Missous The University of Manchester United Kingdom
Yuichiro Mitani Toshiba Corporation Japan
JĂ©rĂŽme Mitard IMEC Belgium
Sushant Mittal Indian Institute of Technology, Bombay India
Yasuyuki Miyamoto Tokyo Institute of Technology Japan
Takashi Mizutani Nagoya University Japan
Shogo Mochizuki IBM Research United States
Jay Mody GlobalFoundries United States
Kurt Moen TowerJazz Semiconductor United States
S. Noor Mohammad Howard University United States
Nihar Mohapatra Indian Institute of Technology, Gandhinagar India
S Mohapatra National Institute of Technology, Rourkela India
Oana Moldovan Universitat Rovira i Virgili Spain
Scott Monaghan University College Cork Ireland
Makoto Monoi Toshiba Corporation Semiconductor & Storage Products Company Japan
Miguel Montes Bajo ICFO - The Institute of Photonics Sciences Spain
Christian Monzio Compagnoni Politecnico di Milano Italy
Saurabh Mookerjea Intel Corporation United States
Dong-Il Moon KAIST Korea
Jooho Moon Yonsei University Korea
Farshad Moradi Aarhus University Denmark
MIlena Moreira Lund University Sweden
Nobuya Mori Osaka University Japan
Hiroshi Morioka Socionext Inc. Japan
Yukinori Morita AIST Japan
Victor Moroz Synopsys Inc. United States
Despina Moschou NCSR Demokritos Greece
Steven C Moss The Aerospace Corporation United States
Vincent Mosser ITRON SAS France
Chandra Mouli Micron Technology United States
Pujarini Mukherjee Indian Institute of Science India
Niloy Mukherjee Intel Corporation United States
Chhandak Mukherjee University of Bordeaux France
Matthias Muoth ETH Zurich Switzerland
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Balamurugan N.B. Thiagarajar College of Engineering India
Azad Naeemi Georgia Institute of Technology United States
Manoj Nag IMEC Belgium
Masanori Nagase National Institute of Advanced Industrial Science and Technology Japan
Deleep Nair Indian Institute of Technology Madras India
Mohammad Najmzadeh University of California, Berkeley United States
Shu Nakaharai National Institute for Materials Science Japan
Akira Nakajima The University of Sheffield United Kingdom
Yutaka Nakamura IBM Japan Japan
Hiroshi Nakashima Kyushu University Japan
Osamu Nakatsuka Nagoya University Japan
Hyoungsik Nam Kyung Hee University Korea
Lan Nan University of California, Los Angeles United States
Emilio Nanni Massachusetts Institute of Technology United States
Lis Nanver TUDelft Netherlands
Ettore Napoli University of Naples Italy
Yasuo Nara University of Hyogo Japan
Rakhi Narang University of Delhi India
Pritish Narayanan IBM Research Almaden United States
Vijay Narayanan IBM T. J. Watson Research Center United States
Federico Nardi Politecnico di Milano Italy
Dario Natali Politecnico di Milano Italy
Gabriele Navarro CEA-LETI France
Kaushik Nayak Indian Institute of Technology, Bombay India
Action Nechibvute Midlands State Univerity Zimbabwe
Nathan Neihart Iowa State University United States
Jeff Neilson SLAC National Accelerator Laboratory United States
Neophytos Neophytou Technical University of Vienna Austria
Andreas Neuber Texas Tech University United States
Tse Nga Ng Palo Alto Research Center United States
Jo Shien Ng University of Sheffield United Kingdom
Wai Tung Ng University of Toronto Canada
Fiore Pasquale  Nicoletta UniversitĂ  della Calabria Italy
Paul Nicollian Texas Instruments Inc. United States
Michael Niemier University of Notre Dame United States
Koji Nii Renesas Technology Corporation Japan
Dmitri Nikonov Intel Corporation United States
Amin Nikoozadeh Stanford University United States
Farnaz Niroui Massachusetts Institute of Technology United States
Yu Nishitani Panasonic Corporation Japan
Takashi Noguchi University of the Ryukyus Japan
Kenji Nomura Tokyo Institute of Technology Japan
Michael Norton Marshall University United States
Nenad Novkovski Saints Cyril and Methodius University of Skopje Macedonia
Gregory Nusinovich University of Maryland United States
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Nixon O Dalsa, Inc. Canada
Brendan O'Connor North Carolina State University United States
Shunri Oda Tokyo Institute of Technology Japan
Ennis Ogawa Broadcom Corporation United States
Min Suk Oh Korea Electronics Technology Institute Korea
Akiko Ohata Osaka City University Japan
Ryuji Ohba Toshiba Corporation Japan
Akira Ohtomo Tokyo Institute of Technology Japan
Aaron Oki Northrop Grumman Space Technology United States
Phil Oldiges IBM United States
Sabih Omar University of South Carolina United States
Yasuhisa Omura Kansai University Japan
Anthony O'Neil Newcastle University United Kingdom
Naoya Onizawa Tohoku University Japan
Shuichi Ono New Japan Radio Co Ltd Japan
Alexei Orlov University of Notre Dame United States
Ali Asghar Orouji Semnan University Iran
Bernard Orsal University Montpellier 2 France
Adelmo Ortiz-Conde Universidad Simon Bolivar Venezuela
Sylvie Ortolland STMicroelectronics France
John M. Osepchuk Full Spectrum Consulting United States
Clemens Ostermaier Infineon Technologies Austria
Özhan Özatay Bogazici University Turkey
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Gernot Paasch Leibniz Inst. For Solid State and Material Res. Germany
Andrea Padovani UniversitĂ  di Modena e Reggio Emilia Italy
Ioannis Pagonakis KIT/IHM Germany
Ashish Pal Indian Institute of Technology, Bombay India
Marco Pala IMEP-LAHC France
Vimala Palanichamy Dayananda Sagar College of Engineering India
Vassil Palankovski Technical University of Vienna Austria
Pierpaolo Palestri Universita Degli Studi Di Udine Italy
Elisabetta Palumbo STMicroelectronics Italy
Tung-Ming Pan Chang Gung University Taiwan
Chenyun Pan Georgia Institute of Technology United States
Feng Pan Tsinghua University China
Andrew Pan University of California, Los Angeles United States
Lucio Pancheri University of Trento Italy
Shesh Mani Pandey GlobalFoundries Singapore
Santosh Pandey Iowa State University United States
Luigi Pantisano GlobalFoundries United States
Claudio Paoloni Lancaster University United Kingdom
George Papaioannou University of Athens Greece
Sung Kyu Park Chung-Ang University Korea
Steve Park Columbia University United States
Jin-Seong Park Hanyang University Korea
Wanjun Park Hanyang University Korea
Sang-Hee  Park KAIST Korea
Daejin  Park Kyungpook National University Korea
Joon Seok Park Samsung Advanced Institute of Technology Korea
Seong Geon Park Samsung Electronics Co. Ltd. Korea
Bertrand Parvais IMEC Belgium
John Pasour Naval Research Laboratory United States
Rajendra M.  Patrikar VNIT, Nagpur India
Marcelo Pavanello Centro Universitario da FEI Brazil
Yuriy Pchelnikov - United States
Stephen Pearton University of Florida United States
Michael Pecht University of Maryland United States
Lourdes Pelaz Universidad de Valladolid Spain
Jonathan Pelz The Ohio State University United States
Jianwei Peng GlobalFoundries United States
Oleg Penzin Synopsys, Inc United States
Luis Pereira FCT-UNL Portugal
Arnaldo Perin Federal University of Santa Catarina Brazil
Michael Petelin Russian Acadamy of Sciences Russia
Ian Marius Peters Massachusetts Institute of Technology United States
Rebecca Peterson University of Michigan United States
John Petillo Science Applications International Corp. United States
Luisa Petti ETH Zurich Switzerland
Kin-Leong Pey Singapore University of Technology and Design Singapore
Anh-Tuan Pham Samsung Semiconductor Inc. United States
Alan Phelps University of Strathclyde United Kingdom
Phan Hong Phuong Hochiminh City University of Technology Viet Nam
Claudio Piemonte Fondazione Bruno Kessler Italy
Louis Piper Binghamton University United States
Joachim Piprek NUSOD Institute United States
Marco Pirola Politecnico di Torino Italy
Federico Pittino Universita Degli Studi Di Udine Italy
Gregor Pobegen KAI GmbH Austria
Dionyz Pogany Technical University of Vienna Austria
Thierry Poiroux LETI-CEA France
Eric Polizzi University of Massachusetts-Amherst United States
Mirko Poljak University of Zagreb Croatia
Eric Pop Stanford University United States
Siddharth Potbhare University of Maryland United States
Vincent Pott AVAGO Technologies Singapore
Christophe Poulain CEA-LETI France
Mahdi Pourfath Technical University of Vienna Austria
Siavash Pourkamali University of Texas at Dallas United States
Haralampos Pozidis IBM Research-Zurich Switzerland
Chetan Prasad Intel Corporation United States
Edward Preisler TowerJazz Semiconductor United States
Guillaume Prenat SPINTEC (CEA/CNRS) France
Ed Priesler TowerJazz Semiconductor United States
Raj Pulugurtha Georgia Institute of Technology United States
Sarath Puthenthermadam Sandisk Corporation United States
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L.X. Qian University of Electronic Science and Technology of China China
Ming Qiao University of Electronic Science and Technology of China China
Liqiao Qin GlobalFoundries United States
Guoxuan Qin Tianjin University China
Teng Qiu Southeast University China
Yong Qiu Tsinghua University China
RĂŒdiger Quay Fraunhofer IAF Germany
Damien Querlioz Universite Paris-Sud, CNRS France
Shafi Qureshi Indian Institute of Technology Kanpur India
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Thomas Rachow Fraunhofer Institute for Solar Energy Systems Germany
Ujwal Radhakrishna Indian Institute of Technology Madras India
M. K. Radhakrishnan NanoRel India
Srinivasan Raghavan Indian Institute Science India
Nagarajan Raghavan Singapore University of Technology and Design Singapore
Lars-Åke Ragnarsson IMEC Belgium
Rajib Rahman Purdue University United States
Farshid Raissi K. N. Toosi University of Technology Iran
Mina Rais-Zadeh University of Michigan United States
Deven Raj Apply Material United States
Bijesh Rajamohanan Sandisk Corporation United States
Siddharth Rajan The Ohio State University United States
Bipin Rajendran IBM T. J. Watson Research Center United States
R.S. Raju Central Electronics Engineering Research Institute India
Shantanu Rajwade Cornell University United States
Shaloo Rakheja New York University United States
Sindhu Ramaswamy Indian Institute of Technology, Delhi India
Edwin Ramayya Intel Corporation United States
Chiara Ramella Politecnico di Torino Italy
Stephen Ramey Intel Corporation United States
Isreael Ramirez The Pennsylvania State University United States
Mindaugas Ramonas Semiconductor Physics Institute Lithuania
Stefano Rampino Consiglio Nazionale delle Ricerche Italy
Ashok Ramu University of California, Santa Barbara United States
Rahul Rao IBM United States
V. Ramgopal Rao Indian Institute of Technology, Bombay India
Jean Raskin Catholic University of Louvain Belgium
Stewart Rauch SUNY New Paltz United States
Umberto Ravaioli University of Illinois at Urbana-Champaign United States
Cristian Ravariu Politehnica University of Bucharest Romania
Shishir Ray GlobalFoundries United States
Biswajit Ray Purdue University United States
Pedram Razavi University College Cork Ireland
Michael Read Calabazas Creek Research Inc. United States
Andrea Reale Universita di Roma Tor Vergata Italy
Ivan Rech Politecnico di Milano Italy
Andrea Redaelli Micron Semiconductor Italia Italy
Vijay Reddy Texas Instruments Inc. United States
Cedric Redeau ARM France
Francesco Regazzoni TUDelft Netherlands
Susanna Reggiani UniversitĂ  di Bologna Italy
Lino Reggiani Universita di Lecce Italy
Hans Reisinger Infineon Technologies Germany
Simanjorang Rejeki Rolls-Royce Singapore Pte. Ltd. Singapore
Na Ren Zhejiang University China
Denis Rideau STMicroelectronics France
Thomas Riedl University of Wuppertal Germany
Jae-Sung Rieh Korea University Korea
You Seung Rim Yonsei University Korea
Matteo Rinaldi Northeastern University United States
Rafael Rios Intel Corporation United States
Fabrizio Roccaforte CNR-IMM Italy
Tristan Rocheleau University of California, Berkeley United States
CĂ©sar Roda-Neve IMEC Belgium
Pavel Rodin Ioffe Physical-Technical Institute of the Russian Academy of Sciences Russia
Saul Rodriguez KTH Royal Institute of Technology Sweden
Mark Rodwell University of California at Santa Barbara United States
Jaume Roig OnSemiconductor Belgium BVBA Belgium
Albert Roitman Communications and Power Industries, CPI Canada Canada
Cosmin Roman ETH Zurich Switzerland
Sean Rommel Rochester Institute of Technology United States
Kevin Ronald University of Strathclyde United Kingdom
Christophe Rossel IBM Research GmbH Switzerland
Vladislav Rostov Institute of High Current Electronics Russia
Radek Roucka Translucent Inc. United States
Ananda Roy Intel Corporation United States
Arunanshu Roy WiTricity Corp. United States
Cunjun Ruan Chinese Academy of Sciences, Beijing China
Alexander Rudenko Radboud University Nijmegen Netherlands
Matthias Rudolph Brandenburg University of Technology Germany
Sergey Rumyantsev Rensselaer Polytechnic Institute United States
Christian Russ Infineon Technologies Germany
Stephen Russell University of Warwick United Kingdom
Phil Rutter NXP Semiconductors United Kingdom
Seung-Tak Ryu KAIST Korea
Kevin Ryu Massachusetts Institute of Technology United States
Sei-Hyung Ryu Wolfspeed, Inc. United States
Gerhard Rzepa Technical University of Vienna Austria
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Angada Sachid University of California, Berkeley United States
Wataru Saito Toshiba Corporation Semiconductor Company Japan
Masumi Saitoh Toshiba Corporation Semiconductor Company Japan
Kenji Sakamoto National Institute for Materials Science Japan
Junichi Sakano Hitachi, Ltd. Japan
Koji Sakui Micron Japan
Javier Salcedo Analog Devices United States
Jean-Michel Sallese Ecole Polytechnique Federale de Lausanne Switzerland
Giovanni Antonio Salvatore Ecole Polytechnique Federale de Lausanne Switzerland
Zuruzi Samah Singapore University of Technology and Design Singapore
Marco Sambi STMicroelectronics Italy
Carlos Sampedro Universidad de Granada Spain
Seiji Samukawa Tohoku University Japan
Aniruddhan Sankaran Indian Institute of Technology Madras India
Saurabh Sant ETH Zurich Switzerland
Sara Santos Sao Paulo University Brazil
Sachin Sapatnekar University of Minnesota United States
Krishna Saraswat Stanford University United States
Chandan Sarkar Jadavpur University India
Deblina Sarkar University of California at Santa Barbara United States
Biddut Sarker Purdue University United States
Guido Sasse NXP Semiconductors Netherlands
Ayumu Sato Sony corporation Japan
Soshi Sato Tohoku University Japan
Paul Saunier TriQuint Semiconductor United States
Andrey Savilov Institute for Applied Physics Russia
Mohamad Sawan Polytechnique Montreal Canada
Raghvendra Saxena Solid State Physics Labotarory India
Binit Saymal Nanyang Technological University Singapore
Edl Schamiloglu University of New Mexico United States
Michael Schlechtweg Fraunhofer Institute for Applied Solid State Germany
Martin Schmid Karlsruhe Institute of Technology Germany
Georg Schmidt Chemnitz University of Technology Germany
Jurriaan Schmitz University of Twente Netherlands
Andries Scholten NXP Semiconductors Netherlands
Mirko Scholz IMEC Belgium
Adolf Schoner Ascatron AB Sweden
Ronald Schrimpf Vanderbilt University United States
Joerg Schulze University of Stuttgart Germany
Udo Schwalke Technische UniversitÀt Darmstadt Germany
Ulrich Schwarz Fraunhofer IAF Germany
Mike Schwarz Technische Hochschule Mittelhessen Germany
Frank Schwierz Technische Universitaet Ilmenau Germany
Alan Seabaugh University of Notre Dame United States
Abu Sebastian IBM Research-Zurich Switzerland
Behnam Sedighi Qualcomm Technologies Inc. United States
Peter Seitz Ecole Polytechnique Federale de Lausanne Switzerland
Katsuyuki Sekine Toshiba Corporation Japan
Luca Selmi Universita Degli Studi Di Udine Italy
Lawrence Selvaraj Institute of Microelectronics Singapore
Vladimir  Semyonov Russian Acadamy of Sciences Russia
Sean Sengele Georgia Institute of Technology United States
Yongho  Seo Sejong University Korea
Andrey Serov University of Illinois at Urbana-Champaign United States
Diego Serrano Qualtré, Inc. United States
Michele  Sessolo University of Valencia Spain
Syed Umer Abbas Shah KTH Royal Institute of Technology Sweden
Lei Shao National Institute of Standards and Technology United States
Michael Shapiro Massachusetts Institute of Technology United States
Ankit Sharma Purdue University United States
Juncong She Sun Yat-sen University China
Chen Shen Fudan University China
Shyh-Chiang Shen Georgia Institute of Technology United States
Praveen Shenoy Infineon Technologies United States
David Sheridan RF Micro Devices United States
Jinn-Kong Sheu National Cheng Kung University Taiwan
Jin-Wei Shi National Central University Taiwan
Bing Shi University of Maryland United States
Keisuke Shibuya National Insititute of Advanced Industrial Science and Technology Japan
Ishiang Shih McGill University Canada
Alexander Shik University of Toronto Canada
Young-Min Shin Northern Illinois University United States
Hyungcheol Shin Seoul National University Korea
Mayank Shrivastava Indian Institute of Science Bangalore India
Max Shtein University of Michigan United States
Nikhil Shukla The Pennsylvania State University United States
Shoji Shukuri GENUSION Inc. Japan
Max Shulaker Stanford University United States
Dieter Silber University of Bremen Germany
Scott Sills Micron Technology United States
Helena Silva University of Connecticut United States
Grigory Simin University of South Carolina United States
Eddy Simoen IMEC Belgium
Johnny Sin The Hong Kong University of Science and Technology Hong Kong
Udaybir Singh Central Electronics Engineering Research Institute India
Uttam Singisetti University at Buffalo United States
Mantavya Sinha GlobalFoundries United States
Jagadishwar Sirigiri Bridge12 Techologies Inc. United States
Radhakrishnan Sithanandam Indian Institute of Technology, Delhi India
Herbert De  Smet University of Gent Belgium
Geert Smit NXP Semiconductors Netherlands
Jeremy  Smith Northwestern University United States
John Snyder Jcap, LLC United States
Franky So University of Florida United States
Ritu Sodhi Empower Semiconductor India
Chang-Woo Sohn Pohang University of Science and Technology Korea
Alexander Soibel Jet Propulsion Laboratory United States
Norhayati Soin University of Malaya Malaysia
Paul Solomon IBM T. J. Watson Research Center United States
Chao Son HGST San Jose Research Center United States
Bo Song Cornell University United States
Ken'ichiro Sonoda Renesas Technology Corporation Japan
Bart Sorée IMEC Belgium
Esin Sozer University of Southern California United States
Giorgio Spiazzi University of Padova Italy
Alessandro Spinelli Politecnico di Milano Italy
Vishnu Srivastava Central Electronics Engineering Research Institute India
James Stathis IBM T. J. Watson Research Center United States
Stefanos Stefanou Helic Inc. Greece
Daniel R. Steinke University of Albany United States
Eric Stevens True Sense Imaging United States
Steve Stoffels IMEC Belgium
R. Stoklas IEE SAS Slovakia
Sebastiano Strangio University of Udine Italy
Robert Street Palo Alto Research Center United States
Dmitri Strukov University of California, Santa Barbara United States
Pin Su National Chiao Tung University Taiwan
R.Y. Su TSMC Taiwan
Norio Sugiura AU Optronics Taiwan
Min Chul  Suh Kyung Hee University Korea
Hitoshi Sumida Fuji Electric Corp R and D Ltd Japan
Yubao Sun Hebei University of Technology China
Yanning Sun IBM T. J. Watson Research Center United States
Xiao Wei Sun Nanyang Technological University Singapore
Nian Sun Northeastern University United States
Dimin Sun Tsinghua University China
Xiao Sun Yale University United States
Kalpathy Sundaram University of Central Florida United States
Rahul Suri Intel Corporation United States
Charles Surya The Hong Kong Polytechnic University Hong Kong
Lawrence Selvaraj Susai Institute of Microelectronics Singapore
Einar Sveinbjörnsson University of Iceland Iceland
Madhavan Swaminathan Georgia Institute of Technology United States
Mark Sweet Univeristy of Sheffield United Kingdom
John A. Swegle SRNL United States
Áron SzabĂł ETH ZĂŒrich Switzerland
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Munecazu Tacano Meisei University Japan
Munehiro Tada NEC Corporation Japan
Ramakrishna Tadikonda Si-TD IGBT Technology United States
Marko Tadjer Naval Research Laboratory United States
Hakim TAHI Centre de Développement des Technologie Avancées Algeria
Daisaburo Takashima Toshiba Corporation Japan
Norikatsu Takaura LEAP Japan
Mitsuru Takenaka The University of Tokyo Japan
Noboru Takeuchi Samsung Display Korea
Maaike Taklo SINTEF Norway
Yukio Tamai Sharp Corporation Japan
Chuan Seng Tan Nanyang Technological University Singapore
Michael Tan Universiti Teknologi Malaysia Malaysia
Fei Tan University of Illinois United States
Chika Tanaka Toshiba Corporation Japan
Aik Yean Tang Chalmers University of Technology Sweden
Zhikai Tang Efficient Power Conversion Corporation United States
Tien-Hao Tang UMC Taiwan
Jianshi Tang University of California at Los Angeles United States
Ting-wei Tang University of Massachusetts United States
Minghua Tang Xiangtan University China
Yasuhiro Taniguchi Floadia Japan
Nelson Tansu Lehigh University United States
Milan Tapajna Institute of Electrical Engineering SAS Slovakia
Yoshinori Tatematsu University of Fukui Japan
Andrzej Taube Institute of Electron Technology Poland
Yuan Taur University of California at San Diego United States
Negar Tavassolian Stevens Institute of Technology United States
D. Martin Taylor Bangor University United Kingdom
Gilles Tessier ESPCI France
Giuseppe Tettamanzi The University of New South Wales Australia
Paragkumar Thadesar Georgia Institute of Technology United States
Gaurav Thareja Intel Corporation United States
Aaron Thean IMEC Belgium
Christoforos Theodorou IMEP-LAHC France
Olivier Thomas CEA-LETI France
Tim Thurgate Spansion Inc United States
Luuk Tiemeijer NXP Semiconductors Netherlands
Ioannis Tigelis National and Kapodistrin University of Athens Greece
David Ting Jet Propulsion Laboratory United States
Stefano Tirelli ETH-Zurich Switzerland
Jeffrey Titus Navsea Crane United States
Cristian Tivarus ON Semiconductor United States
Yuri Tkachev Silicon Storage Technology, Inc. United States
Vinit Todi GlobalFoundries United States
Mitsuhiro Togo GlobalFoundries United States
Daniel Tomaszewski Institute of Electron Technology Poland
Fabrizio Torricelli Eindhoven University of Technology Netherlands
Alberto Tosi Politecnico di Milano Italy
Tanya Trajkovic Cambridge Microelectronics Ltd United Kingdom
Boubacar Traore CEA LETI France
Noah Tremblay Columbia University United States
Ashutosh Tripathi TNO Netherlands
Sudhiranjan Tripathy Institute of Materials Research and Engineering Singapore
Amit Trivedi Georgia Institute of Technology United States
Richard True L-3 Communications Electron Devices Division United States
Jung-Ruey Tsai Asia University Taiwan
Wen-Jer Tsai Macronix International Co. Ltd. Taiwan
Jeff Tsai Tatung University Taiwan
Sai-Wing Tsang City University of Hong Kong Hong Kong
Tseung-Yuen Tseng National Chiao Tung University Taiwan
Victor Farm-Guoo Tseng University of Florida United States
Andreas Tsormpatzoglou Aristotle University of Thessaloniki Greece
Hideaki Tsuchiya Kobe University Japan
Hiroshi Tsuji NHK Science and Technical Research Lab Japan
Soichiro Tsujino Paul Scherrer Institut Switzerland
Atsushi Tsukazaki Tohoku University Japan
K Tsunoda Low-power Electronics Association and Project Japan
Renato Turchetta Science and Technology Facilities Council United Kingdom
Abdulmecit Turut Ä°stanbul Medeniyet University Turkey
Sreenidhi Turuvekere Indian Institute of Technology Madras India
Stanislav Tyaginov Technical University of Vienna Austria
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Ahsan Uddin University of South Carolina United States
Florin Udrea University of Cambridge United Kingdom
Nishad Udugampola Cambridge Microelectronics Ltd United Kingdom
Daisuke Ueda Kyoto Institute of Technology Japan
Cagri Ulusoy Georgia Institute of Technology United States
Shigeyasu Uno Ritsumeikan University Japan
Yukiharu Uraoka National Institute of Advanced Industrial Science and Technology Japan
Michael Uren University of Bristol United Kingdom
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Ramesh Vaddi The Pennsylvania State University United States
ÁgĂșst Valfells Reykjavik University Ireland
Pouya Valizadeh Concordia University Canada
Antonio Valletta CNR-IMM Italy
Mark van Dal TSMC Europe BV Belgium
Geert Van den bosch IMEC Belgium
Marleen Van Hove IMEC Belgium
Ronald van Langevelde NXP Semiconductors Netherlands
Bernard Vancil E Beam inc. United States
Lode Vandamme Eindhoven University of Technology Netherlands
Luca Vandelli UniversitĂ  di Modena e Reggio Emilia Italy
William Vandenberghe University of Texas at Dallas United States
Tony Vanhoucke NXP Semiconductors Belgium
Dhanoop Varghese Texas Instruments Inc. United States
B.G.  Vasallo Universidad de Salamanca Spain
Dragica Vasileska Arizona State University United States
Dmitriy Vavriv Institute of Radio Astronomy Ukraine
Reinaldo Vega IBM United States
Dmitry Veksler SEMATECH United States
Jyothi Bhaskarr Velamala Arizona State University United States
Silviu Velicu EPIR Technologies United States
Nagavarapu Venkatagirish SanDisk Corporation United States
Anne Verhulst IMEC Belgium
Shivam Verma Indian Institute of Technology Roorkee India
Naveen Verma Princeton University United States
Joe Versaggi Global Foundries United States
Maarten Vertregt NXP Semiconductors Netherlands
Giovanni Verzellesi University of Modena and Reggio Emilia Italy
Andrei Vescan RWTH Aachen University Germany
Elisa Vianello CEA-LETI France
Anthony Villalon CEA-LETI France
Maud Vinet CEA-LETI France
Arnaud Virazel LIRMM France
Rajat Vishnoi Indian Institute of Technology, Delhi India
Pieter Visscher University of Alabama United States
Alexander Vlasov Naval Research Laboratory United States
Jan Vobecky CTU in Prague Czech Republic
Eric Vogel Georgia Institute of Technology United States
Steven Voldman Qimonda United States
Rajeev Krishna Vytla International Rectifier United States
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Brent Wacaser IBM United States
John Wager Oregon State University United States
Dietmar Wagner Max-Planck-Institut fuer Plasmaphysik Germany
Sigurd Wagner Princeton University United States
Muhammad A. Wahab Purdue University United States
William Wahby Georgia Institute of Technology United States
Akio Wakejima Nagoya Institute of Technology Japan
Andrew Walker Schiltron Corporation United States
Michael Waltl Technical University of Vienna Austria
Jing Wan IMEP-LAHC France
Ching-Chun Wang - Taiwan
Hui Wang Chinese Academy of Sciences China
Peng-Fei Wang Fudan University China
Hua Wang Georgia Institute of Technology United States
Weike Wang IBM United States
Geng Wang IBM Corporation United States
Xin Peng Wang IMEC Belgium
Jizheng Wang Institute of Chemistry, CAS China
Yong Wang Institute of Electronics China
Sheng Kai Wang Chinese Academy of Sciences China
Tahui Wang National Chiao Tung University Taiwan
Maojun Wang Peking University China
Runsheng Wang Peking University China
Xufeng Wang Purdue University United States
Joseph Wang Qualcomm Technologies Inc. United States
Gunuk Wang Rice University United States
Jing Wang Samsung Semiconductor Inc. United States
Xiaobin Wang Seagate Technology LLC United States
Mingxiang Wang Soochow University China
Yan Wang Tsinghua University China
Shih Ming Wang United Microelectronics Corporation Taiwan
Yanjie Wang University of California at Los Angeles United States
Xingsheng Wang University of Glasgow United Kingdom
Han Wang University of Southern California United States
Weizhong Wang University of Wisconsin-Milwaukee United States
Takashi Watanabe Brookman Technology Japan
Jeff Watt Altera Corp United States
Pieter Weckx Katholieke Universiteit Leuven Belgium
Justin  Wehner Raytheon Vision Systems United States
Lan Wei Massachusetts Institute of Technology United States
Zhiqiang Wei Panasonic Corporation Japan
Lan Wei University of Waterloo Canada
Patrick Wellenius Phononic Devices United States
Shi-Jie Wen Cisco United States
Wen-Yin Weng National Cheng Kung University Taiwan
David Whaley L-3 Communications Electron Devices Division United States
Benjamin White University of Sheffield United Kingdom
Colin Whyte University of Strathclyde United Kingdom
Gilson Wirth UFRGS Brazil
Hei Wong City University of Hong Kong Hong Kong
Hin Yong Wong Multimedia University Malaysia
Man Hoi Wong NICT Japan
Johnson Wong Solar Energy Research Institute of Singapore Singapore
H.-S. Philip Wong Stanford University United States
Man Wong The Hong Kong University of Science and Technology Hong Kong
Jiyong Woo Pohang University of Science and Technology Korea
Dirk Wouters RWTH-Aachen University Germany
Hao Wu Arizona State University United States
Ernest Wu IBM Microelectronics Division United States
Chen-Jun Wu Macronix International Co. Ltd. Taiwan
Kehuey Wu National Applied Research Laboratories Taiwan
Wen-Wei Wu National Chiao Tung University Taiwan
Chung-Chih Wu National Taiwan University Taiwan
Yuh-Renn Wu National Taiwan University Taiwan
Yung-Chun Wu National Tsing Hua University Taiwan
Joyce Wu Pixtronix United States
Shin-Tson Wu University of Central Florida United States
Joachim Wuerfl Ferdinand-Braun-Institut fĂŒr Höchstfrequenztechnik Germany
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Cesar C Xavier Instituto de Pesquisas Energeticas e Nucleares Brazil
Kejun Xia Auburn University United States
Kejun Xia Freescale Semiconductor, Inc. United States
Zihan Xu Arizona State University United States
Ziyan Xu GlobalFoundries United States
Zheng Xu Institution of Optoelectronic Technology China
Chuan Xu Maxim Integrated United States
Xinlong Xu Northwest University China
Jeff Xu Qualcomm Technologies Inc. United States
Nuo Xu Samsung Semiconductor Inc. United States
Miao Xu South China University of Technology China
Huiming Xu Spansion Inc United States
Cong Xu The Pennsylvania State University United States
Kaida Xu University of Electronic Science and Technology of China China
H. P. Edward Xu University of Toronto Canada
Xy Xue Northeastern University China
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Omid Yaghmazadeh Ecole Polytechnique France
Eilam Yalon Technion, Israel Institute of Technology Israel
Toshishige Yamada Santa Clara University United States
Keisuke Yamamoto Kyushu University Japan
Yoshiki Yamamoto Renesas Electronics Corporation Japan
Yoshitaka Yamamoto Semiconductor Energy Laboratory Co., Ltd. Japan
Hiroyuki Yamauchi Fukuoka Institute of Technology Japan
Jun Yan Colorado School of Mines United States
Feng Yan Hong Kong Polytechnic University Hong Kong
Shyuan Yang Columbia University United States
Quankui Yang Fraunhofer IAF Germany
Deng-Ke  Yang Kent State University United States
Chih Chung Yang National Taiwan University Taiwan
Hyunsoo Yang National University of Singapore Singapore
Xuebei Yang Rice University United States
Shu Yang The Hong Kong University of Science and Technology Hong Kong
Jianhua (Joshua) Yang University of Massachusetts United States
Li Yang Washington University United States
Xiaoming Yang Xihua University China
Jun Yao Harvard University United States
Yuan Yao Intel Corporation United States
Ruo-He Yao South China University of Technology China
Zeki Yarar Mersin University Turkey
Naoki Yasuda Toshiba Corporation Japan
Jane Yater Freescale Semiconductor, Inc. United States
Kenneth  Yau University of Toronto Canada
Peide Ye Purdue University United States
C. W.  Yeh Macronix International Co. Ltd. Taiwan
Teng-hao Yeh Macronix International Co., Ltd. Taiwan
Mu-Shih Yeh National Tsing Hua University Taiwan
Yee-Chia Yeo National University of Singapore Singapore
Mingdong Yi Nanjing University of Posts and Telecommunications China
Junsin Yi Sungkyunkwan University Korea
Hamza Yilmaz PowerSemiconductor Solutions United States
Oktay Yilmazoglu Technische UniversitÀt Darmstadt Germany
Jianhua Yin GlobalFoundries United States
Shang-Ping Ying Minghsin University Taiwan
Jong-Gwan Yook Yonsei University Korea
Dong Ki Yoon KAIST Korea
Sung Min Yoon Kyung Hee University Korea
Tae-Hoon Yoon Pusan National University United States
Chiweon Yoon Samsung Electronics Co. Ltd. Korea
Youngki Yoon University of Waterloo Canada
Toshiyuki Yoshida Shimane University Japan
Sifang You Oracle Corp United States
Han You University of Cincinnati United States
Kristina Young-Fisher SEMATECH United States
Min Yu Peking University China
Shimeng Yu Arizona State University United States
Hyun-Yong Yu Korea University Korea
Tao Yu Massachusetts Institute of Technology United States
Xinge Yu Northwestern University United States
Bo Yu Qualcomm Technologies Inc. United States
HongYu Yu South University of Science and Technology of China China
Zhiping Yu Tsinghua University China
Edward Yu University of Texas at Austin United States
Jiahui Yuan SanDisk Corp United States
Yuanzheng Yue University of Notre Dame United States
Valentin  Yuferev Ioffe Physical-Technical Institute of the Russian Academy of Sciences Russia
Ilgu Yun Yonsei University Korea
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G. I. Zaginaylov Kharkov Institute of Physics and Technology Ukraine
Abu  Zainuddin Intel Corporation United States
Koichiro Zaitsu Toshiba Corporation Japan
Cristian Zambelli University of Ferrara Italy
M. Zangeneh Boston University United States
Enrico Zanoni Universita di Padova Italy
Vladimir  Zapevalov Russian Acadamy of Sciences Russia
Saba Zare Northeastern University United States
Konstantinos Zekentes Microelectronics Research Group MRG Greece
Jun Zeng MaxPower Semiconductor Inc United States
Carl-Mikael Zetterling KTH Royal Institute of Technology Sweden
Wei Zhang Broadcom Corporation United States
Kun Zhang Clarkson University United States
Jon Zhang CREE United States
Qun Zhang Fudan University China
Chaoqi Zhang Georgia Institute of Technology United States
Yang Zhang Georgia Institute of Technology United States
Aixi Zhang Hong Kong University of Science and Technology Hong Kong
Leqi Zhang IMEC Belgium
Jian Zhang Liverpool John Moores University United Kingdom
Yuhao Zhang Massachusetts Institute of Technology United States
Shengdong Zhang Peking University China
Lijie Zhang Samsung Electronics Co. Ltd. Korea
Jianping Zhang Shanghai University of Electric Power China
Jianhui Zhang SiC Power Technologies LLC United States
Dongli Zhang Soochow University China
Xiaobing Zhang Southeast University China
Yue Zhang Beihang University China
Liangliang Zhang Stanford University United States
Baijun Zhang Sun Yat-sen University China
Yongxi Zhang Texas Instruments Inc. United States
Lining Zhang The Hong Kong University of Science and Technology Hong Kong
Zengxing Zhang Tongji University China
Nuo Zhang University of California, Berkeley United States
Junhao Zhang University of Cambridge United Kingdom
Bo Zhang University of Electronic Science and Technology of China China
Lu Zhang University of Pittsburgh United States
Liang Zhang University of Strathclyde United Kingdom
Xuan (Cher) Zhang Vanderbilt University United States
Rui Zhang Zhejiang University China
Qing-Tai Zhao Forschungszentrum Julich GmbH Germany
WeiSheng Zhao Univ. Paris-Sud 11 France
Larry Zhao Lam Research United States
Liang Zhao Stanford University United States
Li Zheng Georgia Institute of Technology United States
Jihong  Zheng University of Shanghai for Science and Technology China
Shengqiang Zhou Helmholtz-Zentrum Dresden-Rossendorf Germany
Xianda Zhou HKG Technologies Limited Hong Kong
Huimei Zhou University of California, Riverside United States
Qi Zhou University of Electronic Science and Technology of China China
Jiantao Zhou University of Michigan United States
Yiting Zhu Rensselaer Polytechnic Institute United States
Judy Zhu Sarnoff Corporation United States
Wenjuan Zhu University of Illinois United States
C.Y. Zhu Virginia Commonwealth University United States
Thomas Zimmer Université de Bordeaux France
Martin Zirkl Joanneum Research Forschungsges.m.b.h. Austria
Nikolas Zographos Synopsys Switzerland Inc. Switzerland
Xiao Zou Jianghan University China
Ute Zschieschang Max Planck Institute for Solid State Research Germany
Andrew Zubyk L-3 Communications Electron Devices Division United States
Paola Zuliani STMicroelectronics Italy
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