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Compact Modeling Committee

  • Compact Modeling Committee Chair

    • Benjamin Iniguez
       - Device and Process Modelling
      Senior Member
      Universitat Rovira i Virgili (URV)
      Avinguda dels Paisos Catalans 26
      Tarragona 43007
      Spain
      Phone 1:
      34 977558521

      Fax:
      34 977559605
      Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs.
      His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.
  • Compact Modeling Committee Members

    • Yogesh Singh Chauhan
       - Device and Process Modeling
      Indian Institute of Technology (IIT) Kanpur
      Department of Electrical Engineering
      Kanpur, U.P. 208016
      India
      Phone 1:
      +91-512-6797244

      Phone 2
      +91-512-6797257

      Phone 3:
      +91-8853669988 (mobile)

      Yogesh Singh Chauhan (SM'12) is an associate professor at IIT Kanpur, India. He was with Semiconductor Research & Development Center at IBM in 2007 – 2010, Tokyo Institute of Technology in 2010 and University of California Berkeley in 2010-2012. He is the lead developer of industry standard BSIM-BULK (formerly BSIM6) model. He is the co-developer of ASM-HEMT model for GaN HEMTs, which is under industry standardization at the Compact Model Coalition (CMC). He was technical program committee member of IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2013 and IEEE European Solid-State Device Research Conference (ESSDERC) 2016/2017. He is the member of IEEE-EDS Compact Modeling Committee. He received Ramanujan fellowship in 2012, IBM faculty award in 2013 and P. K. Kelkar fellowship in 2015. His research interests are characterization, modeling, and simulation of semiconductor devices.
    • Geoffrey Coram
      Analog Devices
    • Rob Jones
       - Dr.
      ​Raytheon
    • Slobodan Mijalkovic
    • Laurence Nagel
      Omega Enterprises Consulting
    • Ananda Roy
    • Jaijeet Roychowdhury
      University of California, Berkeley
    • Andries J. Scholten
       - Device and Process Modeling
      NXP Semiconductors
      High Tech Campus 37
      Eindhoven 5656AE The_Netherlands
      Phone 1:
      31 40 274 9685

      Fax:
      31 40 274 6276
      Andries J. Scholten received the M.Sc. and Ph.D. degrees in experimental physics from Utrecht University, The Netherlands, in 1991 and 1995, respectively.
      In 1996, he joined Philips Research Laboratories (now NXP Semiconductors), Eindhoven, The Netherlands, where he has worked on compact MOS modeling for circuit simulation, with a focus on the modelling of thermal noise and non-quasi-static effects. He has contributed to the development and industrialization of well-known compact MOSFET models such as MOS Model 9, MOS Model 11, and the world-standard PSP model. His current research is directed towards RF CMOS and HBT reliability and reliability simulation.
    • Xufeng Wang
      Purdue University
      West Lafayette, INUSA
    • Kejun Xia
      Kaikai Xu received the B.S. degree from the University of Electronic Science and Technology of China (UESTC), Chengdu, China, and the Ph.D. degree from the University of California at Irvine (UCI), USA, in collaboration with the California Institute for Telecommunications and Information Technology. Currently, he is an Associate Professor with the University of Electronic Science and Technology of China, Chengdu, China, and is a Distinguished Professor (1000-Talents Program) of Sichuan Province, China. He is also on the Technical Advisory Board for the International System-on-Chip (SoC) Conference, Exhibit & Workshops (SOC Irvine) and serves on the editorial board for Microelectronics Journal.
      His research interest includes semiconductor devices and analog CMOS IC design, especial on the subject of characterization, parameter extraction and compact modeling of emerging semiconductor devices.
    • Sadayuki Yoshitomi
      Toshiba Corporation