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Electronic Materials Committee

Committee Objective:

The power consumption is the crucial challenge for electronic devices. The high-κ dielectrics, metal gate, and high mobility materials have made strong impacts on high-performance low-power CMOS, DRAM, and flash memory. The objectives of this committee are to explore new and useful electronic materials for ultra-low-power Steep Turn-On CMOS, novel DRAM, Non-Volatile Memory, Energy-Saving devices, Display, and other electronic devices. To promote new technology, the committee will organize or recommend special issues for IEEE journals, panel sessions, and session topics for major conferences.

  • Electronic Materials Committee Chair

    • Ya-Hong Xie
       - Fellow
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      Biography: Ya-Hong Xie obtained his BSc in Physics from Purdue University in 1981, and his MSc and PhD in Electrical Engineering from the University of California at Los Angeles in 1983 and 1986, respectively. He joined the Physical Sciences and Engineering Research Division of Bell Laboratories in 1986 upon graduation from UCLA. He was a member of the technical staff at Bell Labs from 1986 till 1999. He joined the faculty of UCLA in 1999 as a professor in the department of Materials Science and Engineering. His current research interests include understanding the intriguing physical properties of graphene, plasmonic for biosensing, nano-science and engineering, and epitaxial growth of lattice mismatched hetero-structures including group-III nitrides and Si-based heterostructures. Ya-Hong Xie has authored and co-authored over 150 technical articles/book chapters, and holds 38 US patents. He is a member of the American Physical Society, the Materials Research Society, and a fellow of IEEE. He is the recipient of 2012 Alexander von Humboldt Research Award.
  • Electronic Materials Committee Members

    • Paul Berger
       - Fellow
      Paul Berger portrait
      The Ohio State University
      205 Dreese Laboratory, 2015 Neil Avenue
      Columbus, OH 43210
      United States of America
      Phone 1:
      (614) 247-6235

      Fax:
      (614) 292-7596
      Lecture Topics: In 2011, he was established as an IEEE Distinguished Lecturer for EDS. Please contact him directly if you are interested in a seminar: Possible seminar topics include:
      (1) Organic Photovoltaics;
      (2) Quantum Tunneling Electronics;
      (3) Passive Millimeter-Wave Imaging Sensors;
      (4) Plastic SmartCards for IoT

      Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University of Technology in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.
      Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany while supported by Prof. Dr. Gerhard Wegner and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom working under Dr. Jeremy Burroughes. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. And more recently he took a sabbatical leave in 2015-2016 at Tampere University of Technology with the Prof. Don Lupo in the Printed and Organic Electronics Group.
      He has authored over 110 articles, 5 book sections and been issued 22 patents with 6 more pending from 60+ disclosures with a Google Scholar H-index of 33. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), a Lumley Research Award (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, ISDRS, EDTM meetings. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapters. He is a Fellow and Distinguished Lecturer of IEEE EDS and a Senior member of Optical Society of America.
    • Xinhong Cheng
    • Zhiyuan Charles Cheng
       - Prof.
      Zhiyuan Charles Cheng portrait placeholder
      Zhejiang University
      China
    • Barbara De Salvo
      Barbara De Salvo portrait placeholder
      CEA-LETI
      17, Avenue des Martyrs, 38054 Grenoble Cedex 9
      France
    • Muhammad Mustafa Hussain
       - MOS Devices and Technology
      Muhammad Mustafa Hussain portrait
      Senior Member
      King Abdullah University of Science and Technology
      3824 Yarborough Ave
      Austin, TX 78744
      USA
      Phone 1:
      +1 (512) 351-3527

      Muhammad Mustafa Hussain (PhD, ECE, UT Austin, Dec 2005) is an Associate Professor of the Electrical Engineering Program of King Abdullah University of Science and Technology (KAUST), Saudi Arabia. Before joining KAUST in August of 2009, he was Program Manager Emerging Technology Program in SEMATECH, Austin where his program was supported by all the major semiconductor industries and US DARPA. He is the Fellow of American Physical Society (APS), Institute of Physics, UK, IEEE EDS Distinguished Lecturer, Editor-in-Chief of Applied Nanoscience (Springer-Nature), Editor of IEEE T-ED, and an IEEE Senior Member. He has 250+ research papers (including 20 invited reviews, 25 cover articles and 117 journal papers), 50+ issued and pending US patents. His students are serving as faculty and researchers in MIT Media Lab, UC Berkeley, Harvard, UCLA, Yale, Purdue, TSMC, KACST, KFUPM, and DOW Chemicals. Scientific American has listed his research as one of the Top 10 World Changing Ideas of 2014. Applied Physics Letters selected his paper as the Top Feature Article of 2015. He has received 40 research awards including IEEE Region 5 Outstanding Individual Achievement Award 2016, World Technology Network Award Finalist in Health and Medicine 2016, Outstanding Young Texas Exes Award 2015 (UT Austin Alumni Award), US National Academies’ Arab-American Frontiers of Sensors 2015 and 2016, DOW Chemical Sustainability Challenge Award 2012, etc. He has given more than 150 invited talks and has been highlighted extensively in the international media. His passion is to empower humanity with accessible and innovative electronic technologies.
    • Meikei Ieong
       - Fellow
      Meikei Ieong portrait placeholder
      Hong Kong Applied Science and Technology Research Institute
      Chief Technology Officer

      Biography: Meikei Ieong (SM’01) received the B.S. degree in electrical engineering from the National Taiwan University, Taipei, Taiwan, in 1991 and the M.S. and Ph.D. degrees in electrical and computer engineering from the University of Massachusetts, Amherst, in 1993 and 1996, respectively. He also received an MBA degree from the Sloan Fellows Program of Massachusetts Institute of Technology in 2013.


      Meikei is currently Vice-President of TSMC Europe. He was program director of TSMC’s 28nm High-Performance and Mobile Technologies. Prior to that he held various engineering and management positions at IBM including senior manager at IBM TJ. Watson Research Center, Yorktown, NY. He’s recipient of IBM Technical Achievement and Corporate awards and was elected as a Master Inventor at IBM Research.


      He held an adjunct associate professor position with the Department of Electrical Engineering from the Columbia University, NY in 2001. He was General Chairman of the IEEE International Electron Devices Meeting (IEDM). He has served as an editor for the IEEE Transaction on Electron Devices since 2010 and as chair of the IEEE EDS Education Award committee since 2013. He has Published more than one hundred papers in referred journals and conference proceedings and more than eighty patents. He also speaks frequently at international conferences and seminars.

    • M Zafar Iqbal
    • Jeehwan Kim
      Jeehwan Kim portrait placeholder
    • Jong-Ho Lee
      Jong-Ho Lee portrait placeholder
      Seoul National University
      Department of ECE
      Seoul 151-600Korea
      Phone 1:
      82-2-880-1727

    • Akira Nishiyama
      Akira Nishiyama portrait
      Toshiba
      Japan

      Biography: Akira Nishiyama received the B.E. degree from Waseda University in 1983, the M.E. degree from Tokyo Institute of Technology in 1985 and the Ph.D. degree from Waseda University in 1998. In 1985, he joined the Research and Development Center, Toshiba Corporation, Kawasaki, Japan. Since then, he has been engaged in research on silicides and their application to high speed CMOS devices, suppression of floating body effect of high speed SOI CMOS, high-k gate dielectrics, metal gate electrodes, and low power consumption Ge MOS transistors. He was a visiting scientist at FOM Institute for Atomic and Molecular Physics, Amsterdam, from 1993 to 1994, where he studied Si surface and Metal/Si interface structure with the medium energy ion scattering. Currently he is a senior fellow and an assistant director (LSI & Storage field) of corporate R & D center, Toshiba Corporation.


      He also works as a visiting professor of Tokyo Institute of Technology since 2009. His research topic in the institute ranges from Ni silicide nanowires to tunneling field effect transistors using silicide source electrodes.


      He was an editor of the Japanese Journal of Applied Physics from 2006 to 2008. He is currently working as a member of organizing committee of SiGe,Ge & related compounds symposium in ECS meetings.


      Dr. Nishiyama is a fellow of the Japan Society of Applied Physics and a member of IEEE EDS.

    • Atsushi Ogura
    • Dae-Gyu Park
      Dae-Gyu Park portrait
      IBM
      Biography: Dae-Gyu Park received the Ph.D. from the University of Illinois at Urbana-Champaign in 1997 in Electronic Materials Division of Materials Science Department, where he explored researches on III-V MISFET devices for high speed device application.

      Dr. Park was with Hyundai Electronics (1990-1992) and Hynix Semiconductor (1997-2001, presently SK-Hynix) as a senior member of technical staff in Semiconductor R&D center prior to joining IBM in 2001. He has been a research staff member manager of CMOS device integration group in IBM T.J.Watson Research Center, leading the research and development activities of advanced CMOS logic devices for high performance server and low power platform technologies (65nm-5nm nodes). He is presently a senior manager of Nano Science and Technology Lab in T.J.Watson, guiding SiGe FINFET, III-V devices, advanced memory, and advanced process technologies.

      He pioneered high-k/metal gate CMOS technology for IBM server product and IBM alliance partner's Application Processor Chips. He has implemented multiple functional atomic layer deposition (ALD) films into CMOS device applications such as high-k dielectrics, ALD-TiN and TaN for FEOL logic transistors and eDRAM devices.

      Dr. Park has served as advisory and program committee of international ALD conference in AVS, and nominated as a co-chair of 2015 ALD conference. He is an IEEE senior member since 2002, and is the recipient of multiple IBM corporate and research division awards. He authored and co-authored over 100 technical papers, and hold more than 60 US patents and 50 international patents.
    • M.K. Radhakrishnan
       - Senior Member
      M.K.  Radhakrishnan portrait
      NanoRel Technical Consultants
      273, 18D Main, 6th Block
      Koramangla, Bangalore 560095
      India
      Phone 1:
      +91 80 25630695

      Phone 2
      +91 9447663869

      Lecture Topics: 1. Physical Analysis Challenges and Interface Physics Studies in Silicon Nano Devices 2.  Building in Reliability in Devices through Analysis and Study of Failure Mechanisms.


      Biography:  M.K. Radhakrishnan (M’82-SM’94) received B.Sc from Kerala University, India in 1972, M.Sc in Solid State electronics from Sardar Patel University, India in 1975 and Ph.Ddegree in Semiconductor Physics from Cochin University of Science and Technology in 1981.


      He is currently Directorof NanoRel Technical Consultants Singapore from 2004.  He has been with Indian Space Research Organization till 1990. From 1991-1993 he was with ST Microelectronics Singapore. From 1993 to 2001 he was with Institute of Microelectronics Singapore, where he pioneered the setting up of a full-fledged device failure analysis laboratory.  From 1994 to 2004 he served as adjunct professor at National University of Singapore. His current research interests include analysis and reliability in nano-electronic devices and interface physics studies.


      Dr. Radhakrishnan is a fellow of Institution of Electrical and Telecommunication Engineers India, member of Electron Device Failure Analysis Society (EDFAS) USA and ESD Association USA.  He served as Editor of Journal of Semiconductor Technology and Science (Korea) during 2001-2003 and is an Editorial board member of Microelectronics Reliability journal (UK). He served as Guest Editor to IEEE Transactions Devices Materials and Reliability and edited or co-edited of 4 conference proceedings.  He was Technical Chair IEEE International Symposium on Physical and Failure Analysis of ICs (IPFA) in 1995 and 1997 and General Chair of IPFA in 1999.  He was IEEEIEDST General Chair in 2009. He has been in the technical program committees of ESREF, IRPS, EPTC, MIEL, ICEE and EOS/ESD Symposium.  Currently he is the Editor-in Chief of IEEE EDS Newsletter and serves as a member of IEEE EDS Technical Committee on Electronic Materials.  He is a Distinguished Lecturer of IEEE Electron Devices Society.


       

    • Jorg Schulze
       - Prof.
      Jorg Schulze portrait placeholder
      Director of IHT
      University of Stuttgart
      Stuttgart Germany
    • Alex See
       - Director
      Alex See portrait placeholder
      Advanced Module Technology Development
      Globalfoundries Singapore Pte. Ltd.
      Woodlands Industrial Park D
      Street 2
      738406
      Sinapore
      Office:
      +65 6670 2801

      Mobile:
      +65 9237 6957

    • Anshul Vyas
    • Zhiming Wang
      Zhiming Wang portrait
      University of Electronic Science and Technology of China
      School of Microelectronics and Solid-State Electronics
      Room 235
      Chengdu 610054
      P.R.China
      Phone 1:
      +86(028)8320-2601

      Biography: Zhiming Wang received his Ph.D. in condensed matter physics from the institute of semiconductors, Chinese Academy of Sciences Beijing in 1998. He carried out post-doctoral work in molecular-beam epitaxy and scanning tunneling microscope at Paul-Drude-Institute for solid state electronics Berlin (1998-2000), and was a research associate in the physics department of the University of Arkansas (2000-2007) before joining the Arkansas Institute of Nanoscale Materials Science and Engineering in 2007 where he was a Research Professor until June 2011. Now he is a Professor of National 1000-Talent Program, working in the University of Electronic Science and Technology of China, Chengdu. His research has centered on the structural, optical, and electrical properties of low-dimensional semiconductor nanostructures. He serves on the editorial board of the book series “Lecture Notes in Nanoscale Science and Technology” and “Springer Series in Materials Science” as well as being the journal editor-in-chief of “Nanoscale Research Letters”.

    • Peide Ye
      Peide Ye portrait placeholder
      Purdue University