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Power Devices and ICs Committee

Objectives

1. Monitor the status of EDS meetings, education programs and activities, publications and awards in areas of power semiconductor devices and ICs

2. Identify key trends and new areas of interest within this field

3. Recommend new workshops, conferences, and/or conference sessions to serve identified needs of the community

4. Supporting special issues with focus in this field for major publications
Membership Members are volunteers who serve for a two-year renewable term at the invitation of the committee chair. Membership is limited to two consecutive terms so that new ideas can be generated, incorporated, and executed.
Operation This committee operates primarily by email and has at least one in-person meeting each year (held in conjunction with IEDM).
Conferences 2014 Power Device Conferences
Contact If you have ideas that you would like to have considered by this committee (e.g. a new workshop, aspecial issue, topics for special sessions, etc.) please contact any current committee member. If you would like to volunteer on the committee, please contact the committee chair.

  • Power Devices and ICs Committee Chair

  • Power Devices and ICs Committee Members

    • Kevin J. Chen
       - Compound Semiconductor Devices
      Kevin J. Chen portrait
      Hong Kong University of Science and Technology
      Department of Electronic and Computer Engineering
      Clear Water Bay
      Kowloon,Hong Kong
      Phone 1:
      +1 852 23588969

      Prof. Kevin Chen received his B.S. degree from Peking University, Beijing, China in 1988, and PhD degree from University of Maryland, College Park, USA in 1993. His industry experience includes carrying out research and development on III-V high-speed devices in NTT LSI Laboratories, Atsugi, Japan and Agilent Technologies Inc., Santa Clara, California, USA. Prof. Chen joined Hong Kong University of Science and Technology (HKUST) in 2000, where he is currently a professor in the Department of Electronic and Computer Engineering. At HKUST, he has carried out research in wide-bandgap III-nitride devices and ICs, GaN-based MEMS devices, silicon-based microwave passive components and 3D through-silicon via interconnects, and multi-band reconfigurable microwave filters. Currently, his group is focused on developing GaN device technologies for power electronics and high-temperature electronics applications. Prof. Chen has authored or co-authored more than 280 publications in international journals and conference proceedings. He has been granted 4 US patents.
      He currently serves as a distinguished lecturer and a member in the compound semiconductor device and IC technology committee in IEEE Electron Device Society.
    • Oliver Haeberlen
      Oliver Haeberlen portrait placeholder
      Infineon
      Siemensstrasse 2, A-9500
      Villach 9500
      Austria
      Phone 1:
      +49 5 1777 6765

      Phone 2
      +49 676 8205 1224

    • Kimimori Hamada
      Kimimori Hamada portrait
      Toyota Motor Corporation
      543, Kirigahora, Nishihirose-cho,
      Toyota, Aichi 470-0309
      Japan
      Phone 1:
      +81-565-46-6890

      Fax:
      +81 565 46 3382

      Biography:  Kimimori Hamada received the B.Eng. degree in 1982 and the M.Eng. degree in 1985 both in electrical engineering from Osaka Prefecture University, Japan. In 1985 he joined Toyota Motor Corporation, Japan. He is now Project General Manager of the responsible division for developments of power electronics components such as IGBT, power diode, BiCDMOS, SiC, GaN and power module.


      He is a member of JSAE, IEEJ and IEEE. He participates in the committees of some international conference and served on ISPSD 2013 TPC Chair and JSAE EVTeC 2014 & APE Japan 2014 Vice Chairperson.

    • Peter Moens
      Peter Moens portrait placeholder
      ON Semiconductor
      Westerring 15
      Oudenaarde B-9700
      Belgium
    • Wai Tung Ng
       - Solid-State Power and High Voltage Devices
      Wai Tung Ng portrait
      University of Toronto
      ECE
      10 King's College Road
      Toronto, ON M5S 3G4
      Canada
      Phone 1:
      +1 416 978 6249

      Fax:
      +1 416 971 2286
      Biography:  Wai Tung Ng is a Professor at The Edward S. Rogers. Sr. Department of Electrical & Computer Engineering, University of Toronto. His current research work covers smart power semiconductor devices and fabrication processes. In particular, his main focus is in the development of power management circuit, integrated SMPS (Switched-Mode Power Supplies), integrated class D audio power amplifiers. After he obtained his Ph.D. degree from the University of Toronto in 1990, Prof. Ng joined Texas Instruments, Dallas TX to work on LDMOS power transistors for automotive applications. He started his academic career with the University of Hong Kong in 1992. In 1993, Prof. Ng joined the University of Toronto and established the Smart Power Integration & Semiconductor Devices Research Group. He was promoted to associate and full professor in 1998 and 2008, respectively. He has extensive experience in working with the industry to modify standard CMOS te chnology for smart PIC and RF applications. Prof. Ng is the director of the Toronto Nanofabrication Centre, an open access research facility at the University of Toronto. Prof. Ng has also been serving as an associate editor for IEEE Electron Device Letters since 2009.
    • Ichiro Omura
      Ichiro Omura portrait placeholder
      Kyushu Institute of Technology
      1 Sensui-cho
      Tobata-ku
      Kitakyushu, Fukuoka 804-8550
      Japan
      Phone 1:
      81 93 884 3268

      Fax:
      81 93 884 3268
    • Sameer Pendarkhar
      Sameer Pendarkhar portrait
      TI Fellow & Wide Bandgap Roadmap Manager
      Texas Instruments Inc.
      13121 TI Blvd, M/S 364
      Dallas, Texas 75243
      United States
      Phone 1:
      +1 214 882 4617

      Biography:  Sameer Pendharkar is a TI Fellow and High Voltage and Wide Band Gap Technology Roadmap Manager in the Analog Technology Development group. He graduated from University of Wisconsin-Madison and joined TI in 1996. Since then, he has worked on several generations of TI's power Bipolar-CMOS-DMOS (LBC) technologies with the primary responsibility of driving state of the art performance for high voltage and power components. He helped define TI's first 700V HVIC technology and is currently responsible for defining and developing the roadmap for wide band gap semiconductor high voltage technology.


      He has served on technical committees of several IEEE conferences such as IEDM, ISPSD, IRPS, BCTM and ISPS. Sameer has authored/co-authored more than 70 publications, invited talks and short courses and holds more than 80 patents in the area of semiconductor technology and devices.

    • Wataru Saito
      Wataru Saito portrait placeholder
      Toshiba Corp.
      1-1-1 Shibaura, Minato-ku
      Tokyo 105-8001
      Japan
      Phone 1:
      +81 3 3457 3924

      Fax:
      +81 3 5444 9356
    • Kuang Sheng
      Kuang Sheng portrait placeholder
      Zhejiang University
      38 Zheda Road
      Hangzhou, Zhejiang 310027
      P. R. China
      Phone 1:
      +86 18969039603

      Phone 2
      +86 571 87952234

      Fax:
      +86 571 87951345
    • Tomohide Terashima
      Tomohide Terashima portrait placeholder
      Mitsubishi Electric Corporation
      Advanced Technology R&D Center
      8-1-1 Tsukaguchi-Honmachi
      Amagasaki, Hyogo 661-8661
      Japan
      Phone 1:
      +81 6 6497 7620

      Fax:
      +81 6 6497 7285
    • Florin Udrea
       - Solid-State Power and High-Voltage Devices
      Florin Udrea portrait
      University of Cambridge
      Engineering Department
      Trumpington Street
      Cambridge CB2 1PZ
      United Kingdom
      Phone 1:
      44 1223 748319

      Fax:
      44 12233 748348
      Florin Udrea is a professor in semiconductor engineering and head of the High Voltage Microelectronics and Sensors Laboratory at University of Cambridge. He received his BSc from University of Bucharest, Romania in 1991, an MSc in smart sensors from the University of Warwick, UK, in 1992 and the PhD degree in power devices from the University of Cambridge, Cambridge, UK, in 1995. Since October 1998, Prof. Florin Udrea has been an academic with the Department of Engineering, University of Cambridge, UK. Between August 1998 and July 2003 he was an advanced EPSRC Research Fellow and prior to this, a College Fellow in Girton College, University of Cambridge. He is currently leading a research group in power semiconductor devices and solid-state sensors that has won an international reputation during the last 20 years. Prof. Udrea has published over 350 papers in journals and international conferences. He holds 70 patents with 20 more patent applications in power semiconductor devices and sensors.
      Prof. Florin Udrea co-founded three companies, Cambridge Semiconductor (Camsemi) in power ICs, Cambridge CMOS Sensors (CCS) in the field of smart sensors and Cambridge Microelectronics in Power Devices. Prof. Florin Udrea is a board director in Cambridge Enterprise.
      For his ‘outstanding personal contribution to British Engineering’ he has been awarded the Silver Medal from the Royal Academy of Engineering.
    • Jan Vobecky
       - Professor
      Jan  Vobecky portrait
      ABB Switzerland Ltd. Semiconductors
      Fabrikstrasse 3
      Lenzburg CH-56500
      Switzerland
      Phone 1:
      +41 585861769

      Biography: Jan Vobecký (M’92–SM’01) graduated from the Czech Technical University in Prague, Czech Republic in 1981. He received PhD. in Microelectronics (1988), Associate Professor (1992), DrSc. (1999) and Full Professor (2000) in Electronics. Since 2007 he is the Principal Engineer in ABB Switzerland Ltd., Semiconductors. He was President (2002-2003) and Vice President (2004-2006) of Region 8 CS Section IEEE. From 2006 to 2010 he was the SRC Vice Chair of the IEEE EDS and since 2010 the IEEE EDS Newsletter editor. Since 2015 he is at Power Devices & ICs Technical Committee of the IEEE EDS.
    • Anping Zhang
      Anping Zhang portrait placeholder
      School of Electronic Engineering
      Xian Jiaotong University
      No. 28 Xianning W Road
      Xi'an 710049
      China
    • Bo Zhang
       - Solid-State Power and High Voltage Devices
      Bo Zhang portrait
      Univ Electronic Science and Technology of China (UESTC)
      School of Microelectronic and Solid-State Electronics
      No.4, Section 2, North Jianshe Road
      Chengdu , Sichuan 610054
      China
      Phone 1:
      +86 28 8320 4101

      Fax:
      86 28 832 02569
      Prof. Bo Zhang received his B.S. in electronic engineering from Beijing Institute of Technology in 1985 and M.S. in electronic engineering from the University of Electronic Science and Technology of China (UESTC) in 1988. From 1988 to 1996, he worked on power semiconductor devices research and development at the UESTC. From 1996 to 1999, he was a Visiting Professor at Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, U.S.A., where his research activities was modern power semiconductor devices. Since returning to UESTC, in Nov. 1999, he has worked on Power Devices and Smart Power Integrated Circuits. He is currently a full Professor of UESTC and the Director of Center for Integrated Circuit, UESTC.
      His research interest has been focused on the power semiconductor technology since 1987, including power discrete devices, power management ICs and power integrated technology. He has published and presented more than 300 technical papers in scientific journals and international conferences. His work has received more than 3000 citations, with h-index=25 and i10-index=88 (Source: Google Scholar).