Journal of Technology Computer Aided Design
Welcome to the online archive for the IEEE Journal of Technology Computer Aided Design (TCAD), formerly the IEEE Transactions on Semiconductor Technology Modeling and Simulation. This archive contains all the manuscripts published in TCAD from its inception in 1996 until its sunsetting in 2001. Please note: these manuscripts are available to EDS members only. For information on joining EDS, please click here.
TCAD Manuscripts, 1996 - 2001
Analysis of Electron Transport Properties in Unstrained and Strained Si/sub 1-x/Ge/sub x/ Alloys
    Authors: F.M. Bufler, P. Graf, B. Meinerzhagen, B. Adeline, M.M. Rieger, H. Kibbel and G. Fischer
Phase Space Multiple Refresh: A General Purpose Statistical Enhancement Technique for Monte Carlo Device Simulation
    Authors: C. Jungemann, S. Decker, R. Thoma, W.-L. Engl and H. Goto
Full-Band-Structure Theory of High-Field Transport and Impact Ionization of Electrons and Holes in Ge, Si, and GaAs
    Authors: M.V. Fischetti, N. Sano, S.E. Laux and K. Natori
Theory and Implementation of a New Interpolation Method Based on Random Sampling
    Authors: W. Schoenmaker and R. Cartuyvels
High-Level TCAD Task Representation and Automation
    Authors: C. Pichler, R. Plasun, R. Strasser and S. Selberherr
Three-Dimensional Photolithography Simulation
    Authors: H. Kirchauer and S. Selberherr
A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-Tunneling
    Authors: C. Wasshuber, H. Kosina and S. Selberherr
Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD
    Authors: P. Fleischmann and S. Selberherr
Level Set Methods for Etching, Deposition and Photolithography Development
    Authors: D. Adalsteinsson and J.A. Sethian
Convergence Estimation for Stationary Ensemble Monte Carlo Simulations
    Authors: C. Jungemann, S. Yamaguchi and H. Goto
Simulation of Quantum Confinement Effects in Ultra-Thin-Oxide MOS Structures
    Authors: M.G. Ancona, Z. Yu, W.-C. Lee, R.W. Dutton and P.V. Voorde
VLSI Performance Metric Based on Minimum TCAD Simulations
    Authors: G. Schrom, V. De and S. Selberherr
A Computationally Efficient Ion Implantation Damage Model and its Application to Multiple Implant Simulations
    Authors: G. Wang, S. Tian, M. Morris, B. Obradovic, G. Balamurugan, A. Tasch, S. Morris, H. Kennel, P. Packan, C. Magee, J. Sheng, R. Lowther, J. Linn and C. Snell
The Role of Boron Segregation and Transient Enhanced Diffusion on Reverse Short Channel Effect
    Authors: C. Machala, R. Wise, D. Mercer and A. Chatterjee
Time-Integration and Iterative Techniques for Semiconductor Diffusion Modeling
    Authors: A.L. Pardhanani and G.F. Carey
Tilt Angle Effect on DC and AC Performance of Halo PMOS
    Authors: J.-G. Su, S.-C. Wong, D.-Y. Lee, C.-T. Huang and B.-Y. Tsu
AMIGOS: Analytical Model Interface & General Object-Oriented Solver
    Authors: M. Radi, E. Leitner and S. Selberherr
Monte Carlo Simulation of Heavy Species (Indium and Germanium) Ion Implantation into Silicon
    Authors: Y. Chen, B. Obradovic, M. Morris, G. Wang, G. Balamurugan, D. Li, A.F. Tasch, D. Kamenitsa, W. McCoy, S. Baumann, R. Bleier, D. Sieloff, D. Dyer and P. Zeitzoff
A Hybrid Technique for TCAD Modeling and Optimization
    Authors: B. Govoreanu, W. Schoenmaker, G. Kopalidis, G. Dima, O. Mitrea and M. Profirescu
Optimized Algorithms for Three-Dimensional Cellular Topography Simulation
    Authors: W. Pyka, R. Martins and S. Selberherr
TCAD-Based Simulation of Hot-Carrier Degradation in p-Channel MOSFETs Using Silicon Energy-Balance and Oxide Carrier-Transport Equations
    Authors: S.K. Mukundan, M.P. Pagey, C.R. Cirba, R.D. Schrimpf and K.F. Galloway
A Computationally Efficient Target Search Algorithm for a Monte Carlo Ion Implantation Simulator
    Authors: G. Wang, B. Obradovic, Y. Chen, D. Li, S. Oak, G. Srivastav, S. Banerjee and A. Tasch