ExCom & Elected Members-at-Large

Mario Lanza is an Associate Professor of Materials Science and Engineering at the King Abdullah University of Science and Technology (KAUST), in Saudi Arabia since October 2020. Dr. Lanza got his PhD in Electronic Engineering with honors in 2010 at Universitat Autonoma de Barcelona. During the PhD he was a visiting scholar at The University of Manchester (UK) and Infineon Technologies (Germany). In 2010-2011 he was NSFC postdoc at Peking University, and in 2012-2013 he was Marie Curie postdoc at Stanford University. On October 2013 he joined Soochow University as Associate Professor, and in March 2017 he was promoted to Full Professor. Prof. Lanza has published over 120 research papers, including Science, Nature Electronics, Nature Chemistry, and IEDM, edited a book for Wiley-VCH, and registered four patents (one of them granted with 5.6 Million CNY). Prof. Lanza has received the 2017 Young Investigator Award from Microelectronic Engineering (Elsevier), and the 2015 Young 1000 Talent award (among others), and in 2019 he was appointed as Distinguished Lecturer of the Electron Devices Society (IEEE-EDS). Prof. Lanza is Associate Editor of Scientific Reports (Nature) and Microelectronic Engineering (Elsevier), and serves in the board of many others, like Advanced Electronic Materials (Wiley-VCH), Nanotechnology and Nano Futures (IOP). He is also an active member of the technical committee of several world-class international conferences, including IEEE-IEDM, IEEE-IRPS, IEEE-IPFA and APS. Prof. Lanza leads a research group formed by 10-15 PhD students and postdocs, and they investigate how to improve electronic devices using 2D materials, with special emphasis on two-dimensional (layered) dielectrics and memristors for non-volatile digital information storage and artificial intelligence computing systems.

Lecture title:

- Two-dimensional materials based electronic devices

Xiaojun Guo is now Professor in Department of Electronic Engineering at Shanghai Jiao Tong University, China. He received the Bachelor degree from Jilin University (China) in 2002, and the Ph.D. degree from University of Surrey (UK) in 2007, both in electronic engineering. He worked on EDA for VLSIs in Department of Electronic Engineering at Tsinghua University during 2002-2003. His PhD research was on system-on-panel integration with low-temperature poly-Si TFTs. Before joining Shanghai Jiao Tong University in Aug. 2009, he had been working in Plastic Logic Ltd., Cambridge, UK, on research and development of printed polymer TFTs backplanes for flexible displays, and technology transfer for manufacturing. His group at Shanghai Jiao Tong University is now focusing on device and integration of printable thin film transistors and functional devices including displays, sensors and memories. He has authored or co-authored more than 60 technical papers in international journals and conference.

Dr. Edmundo A. Gutiérrez-D. Got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008.

Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).

Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs. His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.

Lecture Topics

Compact device modeling
Semiconductor device parameter extraction
Physics of Thin-Film Transistors
Graphene and TMD devices

P Susthitha Menon is currently an Associate Professor at the Universiti Kebangsaan Malaysia (UKM) at Kuala Lumpur. She received her BSEE degree from (UKM) in 1998. As an Intel scholar, she worked at Intel Malaysia as a Product Engineer for mobile modules systems from 1999 to 2002. She then received her MSc and PhD (Distinction) degrees in 2005 and 2008 respectively from UKM, for the development of Si- and InGaAs-based interdigitated p-i-n photodiodes. At the University’s Institute of Micro-Engineering & Nanoelectronics (IMEN) she is specializing in the field of optoelectronics, nanophotonics, and robust engineering optimization. Susthitha is a Senior Member of IEEE. She is in the organizing team international conference ICSE by ED Malaysia Chapter for many years and is the Secretary of the IEEE Electron Devices Malaysia Chapter.

Manoj Saxena is an Associate Professor in Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India. He received B.Sc. (with honors), M. Sc., and Ph.D. degrees from the University of Delhi in 1998, 2000, and 2006 respectively. He has authored or coauthored 210 technical papers in international journals and various international and national conferences. His current research interests are in the areas of analytical modeling, design, and simulation of Optically controlled MESFET/MOSFET, silicon-on-nothing, insulated-shallow-extension, grooved/concave-gate MOSFETs, cylindrical gate MOSFET and Tunnel FET. He is a reviewer to many journals including Solid State Electronics, Journal of Physics: D Applied Physics and IEEE TED and EDL. Manoj is a Senior Member of IEEE and also Member of Institute of Physics (UK), Institution of Engineering and Technology (UK), National Academy of Sciences India (NASI) and International Association of Engineers (Hong Kong). Currently, he is the Secretary of EDS Delhi Chapter. For his voluntary contribution, Manoj received the outstanding EDS Volunteer recognition from EDS Chapters in the region in 2012.

Lecture Topics: 

-Dielectric Pocket MOSFET: A Novel Device Architecture;
-Embedded Insulator based Novel Nanoscaled Novel MOSFET Structures Tunnel Field Effect Transistor and its Application as Highly Sensitive and Fast Biosensor 
-Modeling and Simulation of Tunnel Field Effect Transistor Dual Material Junctionless Double Gate Transistor for Analog and Digital Performance
-Optimization of Asymmetric (Pi)π-Gate HEMT for Improved Reliability & Frequency Applications

Paul R. Berger

Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio, USA

Tampere University, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, Tampere, Finland

Lecture Topics:

• Si-based Resonant Interband Tunnel Diodes for Quantum Functional and Multi-level Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS
• Organic Photovoltaics: An Introduction to OPV plus Plasmonic enhancements (i.e. point-of-use energy harvesting, conformable to flexible and curved surfaces)
• Passive Millimeter Wave Imaging for Security and Safety via Si-based Backward Diode Sensors (i.e. detect concealed weapons and airplane safety for sight through fog, smoke and light rain)
• Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage
• Nitride-Based Resonant Tunneling Structures for Terahertz Gain
• Unipolar-doped Co-Tunneling Structures: A new pathway for efficient light emission without P-type doping
• Solar-Powered Humanitarian Engineering: Tanzania, Colombia & USA

Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.

Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. Prof. Berger was also a Finnish Distinguished Professor (FiDiPro) at Tampere University of Technology (2014-2019), and he continues as a Fulbright-Nokia Distinguished Chair in Information and Communications Technologies (2020-2022) with the newly merged Tampere University.

He has authored over 240 referred publications and presentations with another ~100 plenary, keynote, invited talks, 5 book sections and been issued 25 patents with 3 more pending from 60+ disclosures with a Google Scholar H-index of 35. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), Lumley Research Awards (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, DRC, ISDRS, EDTM and IFETC meetings. He will be hosting the IFETC in ’21 as General Chair. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapter. In addition, he is an elected member-at-large to the IEEE EDS Board of Governors (19’-21’), where he is also Vice Present of Strategic Directions (20’-21’) and a member of the EDS Finance Committee.

He is an IEEE EDS Fellow (2011) and Distinguished Lecturer (since 2011), as well as a Senior member of the Optical Society of America. He has received $9.9M in USA funding as lead PI, with an additional $26M as Co-PI in USA and €8.8M in funding through his Finnish partnerships. Altogether, he has received ~$47.5M in research funding.

Prof. Berger has established significant humanitarian engineering projects across the world with an emphasis on solar-power and sustainability. After completing a 6 year presence in Haiti to electrify remote schools with solar powered LED lighting as an Alternative Spring Break, Berger re-established two new international programs. (1) One through OSU’s Office of International Affairs, has traveled to Arusha, Tanzania with a group of engineering students from different majors to design, build and install a solar powered LED lighting system for an orphanage. (2) Additionally, through IEEE’s Humanitarian Activities Committee, Berger also proposed, and was funded, to provide solar-powered desalinization for the indigenous Wayúu peoples living in the Guajira peninsula desert. Also, the IEEE Electron Device Society has provided Berger additional funds to extend the Colombia project into 2020.

Talk titles:

·        Modeling and Simulation of Negative Capacitance Transistors

·        Compact Modeling of GaN HEMTs using industry standard ASM-HEMT model

·        Physics and Modeling of FinFET and Nanosheet Transistors

·        Analog and RF Modeling in BSIM-BULK model

·        Physics and Modeling of FDSOI Transistors

Yogesh Singh Chauhan is an associate professor at Indian Institute of Technology Kanpur (IITK), India. He was with Semiconductor Research & Development Center at IBM Bangalore during 2007 – 2010; Tokyo Institute of Technology in 2010; University of California Berkeley during 2010-2012; and ST Microelectronics during 2003-2004. He is the developer of several industry standard models: ASM-GaN-HEMT model, BSIM-BULK model (formerly BSIM6), BSIM-CMG model and BSIM-IMG model. His research group is involved in developing compact models for GaN transistors, FinFET, Nanosheet/Gate-All-Around FETs, FDSOI transistors, Negative Capacitance FETs and 2D FETs. His research interests are characterization, modeling, and simulation of semiconductor devices.

            He is the Editor of IEEE Transactions on Electron Devices and Distinguished Lecturer of the IEEE Electron Devices Society. He is the member of IEEE-EDS Compact Modeling Committee and fellow of Indian National Young Academy of Science (INYAS). He is the founding chairperson of IEEE Electron Devices Society U.P. chapter and Vice-chairperson of IEEE U.P. section. He has published more than 200 papers in international journals and conferences.

            He received Ramanujan fellowship in 2012, IBM faculty award in 2013 and P. K. Kelkar fellowship in 2015, CNR Rao faculty award, Humboldt fellowship and Swarnajayanti fellowship in 2018. He has served in the technical program committees of IEEE International Electron Devices Meeting (IEDM), IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), IEEE European Solid-State Device Research Conference (ESSDERC), IEEE Electron Devices Technology and Manufacturing (EDTM), and IEEE International Conference on VLSI Design and International Conference on Embedded Systems.

Patrick Fay received a B.S. degree in Electrical Engineering from the University of Notre Dame in 1991, followed by the M.S. and Ph.D. degrees in Electrical Engineering from the University of Illinois at Urbana-Champaign in 1993 and 1996, respectively. He joined the faculty of the Department of Electrical Engineering at the University of Notre Dame in 1997, where he currently a professor as well as the director of the Notre Dame Nanofabrication Facility. His research interests include the design, fabrication, and characterization of III-V microwave and millimeter-wave electronic devices and circuits, power devices, and high-speed optoelectronic devices and optoelectronic integrated circuits. His research also includes the development and use of micromachining techniques for the fabrication of microwave and millimeter-wave components and packaging. Prof. Fay was awarded the Department of Electrical Engineering’s Outstanding Teacher award in 1998 and 2018, and Notre Dame's College of Engineering’s Outstanding Teacher award in 2015. He is a fellow of the IEEE, and Electron Device Society Distinguished Lecturer, and serves as an associate editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE Transactions on Electron Devices, and IEEE Transactions on Microwave Theory and Techniques.

Lecture Topics

- III-N Devices and Integration for Millimeter-Wave and Power Applications 

- Vertical GaN Devices and Epitaxial Lift-Off Processing for High Performance Power Applications

- Advances in III-N Devices for Power and Internet of Things Applications 

- III-N Nanowire FETs for Low-Power Applications

- Advanced Tunneling-Based Devices for mm-Wave Sensing and Imaging