ExCom/Elected Members-at-Large

MK Radhakrishnan (M’82, SM’94, LSM’18) is the Founder Director of NanoRel LLP -Technical Consultants providing analysis-based solutions to micro and nano electronic industries for improving reliability of devices. As a researcher in the area of semiconductor device failure physics for more than 35 years, he worked with industries (ST Microelectronic and Philips), research institutions (Institute of Microelectronics, Singapore and Indian Space Research Organization) and in academia with National University of Singapore.  As a technical consultant he works with many MNCs and also provides training on device failure analysis & reliability to various Industries, Universities and Research Centres. 

Lecture Topics: 

- Circa 70 – Semiconductor Device Progression and Challenges towards Nanoera.

- Interface Physics and Analysis Challenges in Silicon Nanodevices

- Are the Progressions towards the “Benefit of Humanity”? -  A Failure Analyst’s View

Lecture Topics:

- Analog/Mixed-Signal/RF IC and Enabling Technologies 
- High Performance VLSI Interconnect

Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, recipient of the 2014 EDS J.J. Ebers Award, and has been an ExCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in research on integrated passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES. In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition, he is affiliated with the University of Stuttgart as a full professor. More recently, he also became CEO of the IMS Mikro-Nano Produkte GmbH. Dr. Burghartz has published about 350 reviewed articles and holds more than 30 patents. Distinguished Lecture Titles -Hybrid Systems in Foil -Ultra-thin chip technology -GaN technologies for power and RF

Lecture Topics:

-Ultra-Thin Chips – A New Paradigm in Silicon Technology
-Hybrid Systems-in-Foil - Combining the Merits of Thin Chips and of Large-Area Electronics
-GaN-on-Si Technology for Power, RF & Specials
-Marvels of Microelectronic Engineering

Patrick Fay received a B.S. degree in Electrical Engineering from the University of Notre Dame in 1991, followed by the M.S. and Ph.D. degrees in Electrical Engineering from the University of Illinois at Urbana-Champaign in 1993 and 1996, respectively. He joined the faculty of the Department of Electrical Engineering at the University of Notre Dame in 1997, where he currently a professor as well as the director of the Notre Dame Nanofabrication Facility. His research interests include the design, fabrication, and characterization of III-V microwave and millimeter-wave electronic devices and circuits, power devices, and high-speed optoelectronic devices and optoelectronic integrated circuits. His research also includes the development and use of micromachining techniques for the fabrication of microwave and millimeter-wave components and packaging. Prof. Fay was awarded the Department of Electrical Engineering’s Outstanding Teacher award in 1998 and 2018, and Notre Dame's College of Engineering’s Outstanding Teacher award in 2015. He is a fellow of the IEEE, and Electron Device Society Distinguished Lecturer, and serves as an associate editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE Transactions on Electron Devices, and IEEE Transactions on Microwave Theory and Techniques.

Lecture Topics

- III-N Devices and Integration for Millimeter-Wave and Power Applications 

- Vertical GaN Devices and Epitaxial Lift-Off Processing for High Performance Power Applications

- Advances in III-N Devices for Power and Internet of Things Applications 

- III-N Nanowire FETs for Low-Power Applications

- Advanced Tunneling-Based Devices for mm-Wave Sensing and Imaging

Paul R. Berger

Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio, USA

Tampere University, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, Tampere, Finland 

Lecture Topics:

-Si-based Resonant Interband Tunnel Diodes for Quantum Functional and Multi-level Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS

-Organic Photovoltaics: An Introduction to OPV plus Plasmonic enhancements (i.e. point-of-use energy harvesting, conformable to flexible and curved surfaces)

-Passive Millimeter Wave Imaging for Security and Safety via Si-based Backward Diode Sensors (i.e. detect concealed weapons and airplane safety for sight through fog, smoke and light rain)

-Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage

-Nitride-Based Resonant Tunneling Structures for Terahertz Gain

-Unipolar-doped Co-Tunneling Structures: A new pathway for efficient light emission without P-type doping

Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.

Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. And more recently he took a sabbatical leave in 2015-2016 at Tampere University of Technology.

He has authored over 120 articles, 5 book sections and been issued 22 patents with 6 more pending from 60 + disclosures with a Google Scholar H-index of 33. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), a Lumley Research Award (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, ISDRS, EDTM meetings. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapters. In addition, he is Chair of the EDS technical committee on Electronic Materials and a member of their Flexible Electronics committee too. He was also an SRC Vice-Chair for IEEE EDS in Regions 1-3,7, and recently elected to the IEEE EDS Board of Governors (19’-21’). He is a Fellow and Distinguished Lecturer of IEEE EDS and a Senior member of Optical Society of America.

Lecture Topics: 3D Technology Overview, 3D Integration and Die Stacking

Bio

Dr. Edmundo A. Gutiérrez-D. Got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008.

Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).

Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs. His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.

Lecture Topics

Compact device modeling
Semiconductor device parameter extraction
Physics of Thin-Film Transistors
Graphene and TMD devices

Manoj Saxena is an Associate Professor in Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India. He received B.Sc. (with honors), M. Sc., and Ph.D. degrees from the University of Delhi in 1998, 2000, and 2006 respectively. He has authored or coauthored 210 technical papers in international journals and various international and national conferences. His current research interests are in the areas of analytical modeling, design, and simulation of Optically controlled MESFET/MOSFET, silicon-on-nothing, insulated-shallow-extension, grooved/concave-gate MOSFETs, cylindrical gate MOSFET and Tunnel FET. He is a reviewer to many journals including Solid State Electronics, Journal of Physics: D Applied Physics and IEEE TED and EDL. Manoj is a Senior Member of IEEE and also Member of Institute of Physics (UK), Institution of Engineering and Technology (UK), National Academy of Sciences India (NASI) and International Association of Engineers (Hong Kong). Currently, he is the Secretary of EDS Delhi Chapter. For his voluntary contribution, Manoj received the outstanding EDS Volunteer recognition from EDS Chapters in the region in 2012.

Lecture Topics: 

-Dielectric Pocket MOSFET: A Novel Device Architecture;
-Embedded Insulator based Novel Nanoscaled Novel MOSFET Structures Tunnel Field Effect Transistor and its Application as Highly Sensitive and Fast Biosensor 
-Modeling and Simulation of Tunnel Field Effect Transistor Dual Material Junctionless Double Gate Transistor for Analog and Digital Performance
-Optimization of Asymmetric (Pi)π-Gate HEMT for Improved Reliability & Frequency Applications

Paul R. Berger

Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio, USA

Tampere University, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, Tampere, Finland 

Lecture Topics:

-Si-based Resonant Interband Tunnel Diodes for Quantum Functional and Multi-level Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS

-Organic Photovoltaics: An Introduction to OPV plus Plasmonic enhancements (i.e. point-of-use energy harvesting, conformable to flexible and curved surfaces)

-Passive Millimeter Wave Imaging for Security and Safety via Si-based Backward Diode Sensors (i.e. detect concealed weapons and airplane safety for sight through fog, smoke and light rain)

-Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage

-Nitride-Based Resonant Tunneling Structures for Terahertz Gain

-Unipolar-doped Co-Tunneling Structures: A new pathway for efficient light emission without P-type doping

Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.

Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. And more recently he took a sabbatical leave in 2015-2016 at Tampere University of Technology.

He has authored over 120 articles, 5 book sections and been issued 22 patents with 6 more pending from 60 + disclosures with a Google Scholar H-index of 33. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), a Lumley Research Award (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, ISDRS, EDTM meetings. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapters. In addition, he is Chair of the EDS technical committee on Electronic Materials and a member of their Flexible Electronics committee too. He was also an SRC Vice-Chair for IEEE EDS in Regions 1-3,7, and recently elected to the IEEE EDS Board of Governors (19’-21’). He is a Fellow and Distinguished Lecturer of IEEE EDS and a Senior member of Optical Society of America.

Mario Lanza got his PhD in Electronic Engineering (with honors) in 2010 at the Universitat Autonoma de Barcelona. During the PhD he was visiting scholar at the Deggendorf Institute of Technology (Germany, 2008) and University of Manchester (UK, 2009). During his PhD he analyzed high-k dielectric samples from Infineon Technologies and Numonyx. In 2010-2011 he did a postdoc at Peking University, and in 2012-2013 he was a Marie Curie fellow at Stanford University. On October 2013 he joined Soochow University as Associate Professor, and in 2017 he was promoted to Full Professor. Currently, Prof. Lanza leads a group formed by 17-20 graduate students and postdocs, and it focuses on the improvement of electronic devices using 2D materials. Prof. Lanza has published over 90 research papers (including Science, Nature Electronics, IEDM Tech Digest, and Advanced Materials) edited an entire book on Conductive Atomic Force Microscopy for Wiley-VCH, and registered four patents (one of them granted with 1 million USD investment). He is a member of the technical committee of several top conferences in the field of electronic devices (IEDM, IRPS, IPFA), and member of the advisory board of Advanced Electronic Materials, Nature Scientific Reports, Nanotechnology, Nano Futures and Crystal Research and Technology. Prof. Lanza has received some of the most important research awards at his stage, including the 2017 Young Investigator Award in the field of Microelectronic Engineering (Elsevier), the Young 1000 Talent (Ministry of Education of China), and the Marie Curie postdoctoral fellowship (European Union). In 2019 he was selected as Distinguished Lecturer by the Electron Devices Society.

Lecture title:

- Two-dimensional materials based electronic devices