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ExCom & Elected Members-at-Large
ExCom - Executive Committee
The EDS Executive Committee (ExCom) is an 11 member body comprised of the society's officers (seated Presidents, Treasurer, Secretary), Standing Committee Vice Presidents, and the EDS Operations Director. The Executive Committee provides the Board of Governors with strategic vision and long-term planning for the Society, oversees the finances and operations of the Society, and proposes new initiatives as well as policy changes. The current ExCom members are listed below.
President: President-Elect assumes the position of President for a two-year term, (maximum one term) after serving as President-Elect for two years. The President has BoG voting privileges.
President Elect: Elected for a two-year term, maximum one term. The President-Elect has BoG voting privileges.
Secretary: Elected for a two-year term, no maximum terms. The Secretary has BoG voting privileges.
Treasurer: Elected for a two-year term, no maximum terms. The Treasurer has BoG voting privileges
Jr. & Sr. Past Presidents: have two-year terms and BoG voting privileges.
Vice Presidents: have two-year renewable terms and Forum voting privileges.
President
Ravi M. Todi
Fellow
Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
Lecuture Topic
- MOS Devices and Technology
President Elect
Ravi M. Todi
Fellow
Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
Lecuture Topic
- MOS Devices and Technology
Jr. Past President
Fernando Guarin - Fellow
Global Foundries
Lecture Topics: Reliability and scaling of CMOS, SiGe Reliability
Sr. Past President
Samar K. Saha - Life Fellow
Prospicient Devices
Samar Saha has served as the 2016-2017 President of the IEEE Electron Devices Society (EDS) and currently serving as the Senior Past President and Chairs of the J.J. Ebers Award and Fellow Evaluations Committees. He is the Chief Research Scientist at Prospicient Devices, California, USA and an Adjunct faculty in the Electrical Engineering (EE) department, Santa Clara University, USA. In the past, he has worked in various technical and management positions for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta. In academia, he has worked as a faculty member in the EE departments at Southern Illinois University, Carbondale; Auburn University; the University of Nevada, Las Vegas; and the University of Colorado, Colorado Springs.
Dr. Saha has authored over 100 research papers; two books, entitled, FinFET Devices for VLSI Circuits and Systems (2020) and Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond (2015); one book chapter on Technology Computer-Aided Design (TCAD); and holds 12 US patents. His research interests include exploratory device and process architectures, compact modeling, renewable energy, and R & D management. He is an IEEE Life Fellow and a Fellow of the Institution of Engineering and Technology, UK.
Lecture Topics: (1) Advanced Field-Effect Transistor Device Technologies for Ultra-low Power VLSI Circuits and Systems at Nanometer Nodes; (2) Physics of Integrated Circuit Device Models for VLSI Circuit Design; (3) Thin Film Transistors for Ubiquitous Flexible Electronics; (4) Evolution of Semiconductor Devices Enabling Smart Environments and Integrated Ecosystems.
Secretary
M.K. Radhakrishnan - Life Senior Member
MK Radhakrishnan (M’82, SM’94, LSM’18) is the Founder Director of NanoRel LLP -Technical Consultants providing analysis-based solutions to micro and nano electronic industries for improving reliability of devices. As a researcher in the area of semiconductor device failure physics for more than 35 years, he worked with industries (ST Microelectronic and Philips), research institutions (Institute of Microelectronics, Singapore and Indian Space Research Organization) and in academia with National University of Singapore. As a technical consultant he works with many MNCs and also provides training on device failure analysis & reliability to various Industries, Universities and Research Centres.
Lecture Topics:
- Circa 70 – Semiconductor Device Progression and Challenges towards Nanoera.
- Interface Physics and Analysis Challenges in Silicon Nanodevices
- Are the Progressions towards the “Benefit of Humanity”? - A Failure Analyst’s View
Treasurer
Bin Zhao - Fellow
Lecture Topics:
- Analog/Mixed-Signal/RF IC and Enabling Technologies
- High Performance VLSI Interconnect
Vice President of Regions and Chapters
Murty Polavarapu
Space Electronics Solutions
Mail Stop MVA01-016
Vice President of Publications and Products
Joachim N. Burghartz - Fellow
Institute for Microelectronics Stuttgart (IMS CHIPS)
IEEE Region 8 (Europe, Middle East and Africa)
Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, recipient of the 2014 EDS J.J. Ebers Award, and has been an ExCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in research on integrated passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES. In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition, he is affiliated with the University of Stuttgart as a full professor. More recently, he also became CEO of the IMS Mikro-Nano Produkte GmbH. Dr. Burghartz has published about 350 reviewed articles and holds more than 30 patents. Distinguished Lecture Titles -Hybrid Systems in Foil -Ultra-thin chip technology -GaN technologies for power and RF
Lecture Topics:
-Ultra-Thin Chips – A New Paradigm in Silicon Technology
-Hybrid Systems-in-Foil - Combining the Merits of Thin Chips and of Large-Area Electronics
-GaN-on-Si Technology for Power, RF & Specials
-Marvels of Microelectronic Engineering
Vice President of Educational Activities
Navakanta Bhat
Indian Institute of Science
Brief bio: Navakanta Bhat received his Ph.D. in Electrical Engineering from Stanford University, in 1996. Then he worked at Motorola’s Advanced Products R&D Lab in Austin, TX until 1999. He is currently a Professor at the Indian Institute of Science (IISc), Bangalore. His current research is on Nanoelectronics and Sensors. He has more than 200 publications and 20 patents. He was instrumental in creating the National Nanofabrication Centre (NNfC) at IISc, benchmarked against the best university facilities in the world. He is the recipient of IBM Faculty award and Outstanding Research Investigator award (Govt. of India). He is a Fellow of INAE. He was the Editor of IEEE Transactions on Electron Devices, during 2013-2016. He is the member of the National Innovation Council in Nanoelectronics. He is the founder and promoter of a startup called “PathShodh Healthcare”, which builds point-of-care diagnostics for diabetes and its complications.
Lecturer Topics:
- Nanotransistors with 2D materials : Opportunities and Challenges
- Electrochemical Biosensors for managing Diabetes and its Complications
- Single Chip Metal Oxide Gas Sensor Array for Environment Monitoring
- Nanostructured High Performance Gas sensors
Vice President of Meetings
Kazunari Ishimaru
Kioxia Corporation
Vice President of Membership
Patrick Fay - Compound Semiconductors
University of Notre Dame
Dept. of Electrical Engineering, IN, USAIEEE Region 4 (Central USA)E: pfay@nd.edu
Patrick Fay received a B.S. degree in Electrical Engineering from the University of Notre Dame in 1991, followed by the M.S. and Ph.D. degrees in Electrical Engineering from the University of Illinois at Urbana-Champaign in 1993 and 1996, respectively. He joined the faculty of the Department of Electrical Engineering at the University of Notre Dame in 1997, where he currently a professor as well as the director of the Notre Dame Nanofabrication Facility. His research interests include the design, fabrication, and characterization of III-V microwave and millimeter-wave electronic devices and circuits, power devices, and high-speed optoelectronic devices and optoelectronic integrated circuits. His research also includes the development and use of micromachining techniques for the fabrication of microwave and millimeter-wave components and packaging. Prof. Fay was awarded the Department of Electrical Engineering’s Outstanding Teacher award in 1998 and 2018, and Notre Dame's College of Engineering’s Outstanding Teacher award in 2015. He is a fellow of the IEEE, and Electron Device Society Distinguished Lecturer, and serves as an associate editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE Transactions on Electron Devices, and IEEE Transactions on Microwave Theory and Techniques.
Lecture Topics
- III-N Devices and Integration for Millimeter-Wave and Power Applications
- Vertical GaN Devices and Epitaxial Lift-Off Processing for High Performance Power Applications
- Advances in III-N Devices for Power and Internet of Things Applications
- III-N Nanowire FETs for Low-Power Applications
- Advanced Tunneling-Based Devices for mm-Wave Sensing and Imaging
Vice President of Technical Committees
John Dallesasse - Associate Professor
Department of Electrical and Computer Engineering
University of Illinois at Urbana-Champaign
Vice President of Strategic Directions
Paul Berger - Fellow
The Ohio State University
IEEE Region 2 (Eastern USA)
Paul R. Berger
Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio, USA
Tampere University, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, Tampere, Finland
Lecture Topics:
- Si-based Resonant Interband Tunnel Diodes for Quantum Functional and Multi-level Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS
- Organic Photovoltaics: An Introduction to OPV plus Plasmonic enhancements (i.e. point-of-use energy harvesting, conformable to flexible and curved surfaces)
- Passive Millimeter Wave Imaging for Security and Safety via Si-based Backward Diode Sensors (i.e. detect concealed weapons and airplane safety for sight through fog, smoke and light rain)
- Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage
- Nitride-Based Resonant Tunneling Structures for Terahertz Gain
- Unipolar-doped Co-Tunneling Structures: A new pathway for efficient light emission without P-type doping
- Solar-Powered Humanitarian Engineering: Tanzania, Colombia & USA
Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.
Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. Prof. Berger was also a Finnish Distinguished Professor (FiDiPro) at Tampere University of Technology (2014-2019), and he continues as a Fulbright-Nokia Distinguished Chair in Information and Communications Technologies (2020-2022) with the newly merged Tampere University.
He has authored over 240 referred publications and presentations with another ~100 plenary, keynote, invited talks, 5 book sections and been issued 25 patents with 3 more pending from 60+ disclosures with a Google Scholar H-index of 35. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), Lumley Research Awards (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, DRC, ISDRS, EDTM and IFETC meetings. He will be hosting the IFETC in ’21 as General Chair. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapter. In addition, he is an elected member-at-large to the IEEE EDS Board of Governors (19’-21’), where he is also Vice Present of Strategic Directions (20’-21’) and a member of the EDS Finance Committee.
He is an IEEE EDS Fellow (2011) and Distinguished Lecturer (since 2011), as well as a Senior member of the Optical Society of America. He has received $9.9M in USA funding as lead PI, with an additional $26M as Co-PI in USA and €8.8M in funding through his Finnish partnerships. Altogether, he has received ~$47.5M in research funding.
Prof. Berger has established significant humanitarian engineering projects across the world with an emphasis on solar-power and sustainability. After completing a 6 year presence in Haiti to electrify remote schools with solar powered LED lighting as an Alternative Spring Break, Berger re-established two new international programs. (1) One through OSU’s Office of International Affairs, has traveled to Arusha, Tanzania with a group of engineering students from different majors to design, build and install a solar powered LED lighting system for an orphanage. (2) Additionally, through IEEE’s Humanitarian Activities Committee, Berger also proposed, and was funded, to provide solar-powered desalinization for the indigenous Wayúu peoples living in the Guajira peninsula desert. Also, the IEEE Electron Device Society has provided Berger additional funds to extend the Colombia project into 2020.
President
Ravi M. Todi
Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
Lecuture Topic
- MOS Devices and Technology
President Elect
Ravi M. Todi
Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
Lecuture Topic
- MOS Devices and Technology
Jr. Past President
Fernando Guarin - Fellow
Lecture Topics: Reliability and scaling of CMOS, SiGe Reliability
Sr. Past President
Samar K. Saha - Life Fellow
Samar Saha has served as the 2016-2017 President of the IEEE Electron Devices Society (EDS) and currently serving as the Senior Past President and Chairs of the J.J. Ebers Award and Fellow Evaluations Committees. He is the Chief Research Scientist at Prospicient Devices, California, USA and an Adjunct faculty in the Electrical Engineering (EE) department, Santa Clara University, USA. In the past, he has worked in various technical and management positions for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta. In academia, he has worked as a faculty member in the EE departments at Southern Illinois University, Carbondale; Auburn University; the University of Nevada, Las Vegas; and the University of Colorado, Colorado Springs.
Dr. Saha has authored over 100 research papers; two books, entitled, FinFET Devices for VLSI Circuits and Systems (2020) and Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond (2015); one book chapter on Technology Computer-Aided Design (TCAD); and holds 12 US patents. His research interests include exploratory device and process architectures, compact modeling, renewable energy, and R & D management. He is an IEEE Life Fellow and a Fellow of the Institution of Engineering and Technology, UK.
Lecture Topics: (1) Advanced Field-Effect Transistor Device Technologies for Ultra-low Power VLSI Circuits and Systems at Nanometer Nodes; (2) Physics of Integrated Circuit Device Models for VLSI Circuit Design; (3) Thin Film Transistors for Ubiquitous Flexible Electronics; (4) Evolution of Semiconductor Devices Enabling Smart Environments and Integrated Ecosystems.
Secretary
M.K. Radhakrishnan - Life Senior Member
MK Radhakrishnan (M’82, SM’94, LSM’18) is the Founder Director of NanoRel LLP -Technical Consultants providing analysis-based solutions to micro and nano electronic industries for improving reliability of devices. As a researcher in the area of semiconductor device failure physics for more than 35 years, he worked with industries (ST Microelectronic and Philips), research institutions (Institute of Microelectronics, Singapore and Indian Space Research Organization) and in academia with National University of Singapore. As a technical consultant he works with many MNCs and also provides training on device failure analysis & reliability to various Industries, Universities and Research Centres.
Lecture Topics:
- Circa 70 – Semiconductor Device Progression and Challenges towards Nanoera.
- Interface Physics and Analysis Challenges in Silicon Nanodevices
- Are the Progressions towards the “Benefit of Humanity”? - A Failure Analyst’s View
Treasurer
Bin Zhao - Fellow
Lecture Topics:
- Analog/Mixed-Signal/RF IC and Enabling Technologies
- High Performance VLSI Interconnect
Vice President of Regions and Chapters
Murty Polavarapu
Mail Stop MVA01-016
Vice President of Publications and Products
Joachim N. Burghartz - Fellow
Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, recipient of the 2014 EDS J.J. Ebers Award, and has been an ExCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany. From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in research on integrated passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES. In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition, he is affiliated with the University of Stuttgart as a full professor. More recently, he also became CEO of the IMS Mikro-Nano Produkte GmbH. Dr. Burghartz has published about 350 reviewed articles and holds more than 30 patents. Distinguished Lecture Titles -Hybrid Systems in Foil -Ultra-thin chip technology -GaN technologies for power and RF
Lecture Topics:
-Ultra-Thin Chips – A New Paradigm in Silicon Technology
-Hybrid Systems-in-Foil - Combining the Merits of Thin Chips and of Large-Area Electronics
-GaN-on-Si Technology for Power, RF & Specials
-Marvels of Microelectronic Engineering
Vice President of Educational Activities
Navakanta Bhat
Brief bio: Navakanta Bhat received his Ph.D. in Electrical Engineering from Stanford University, in 1996. Then he worked at Motorola’s Advanced Products R&D Lab in Austin, TX until 1999. He is currently a Professor at the Indian Institute of Science (IISc), Bangalore. His current research is on Nanoelectronics and Sensors. He has more than 200 publications and 20 patents. He was instrumental in creating the National Nanofabrication Centre (NNfC) at IISc, benchmarked against the best university facilities in the world. He is the recipient of IBM Faculty award and Outstanding Research Investigator award (Govt. of India). He is a Fellow of INAE. He was the Editor of IEEE Transactions on Electron Devices, during 2013-2016. He is the member of the National Innovation Council in Nanoelectronics. He is the founder and promoter of a startup called “PathShodh Healthcare”, which builds point-of-care diagnostics for diabetes and its complications.
Lecturer Topics:
- Nanotransistors with 2D materials : Opportunities and Challenges
- Electrochemical Biosensors for managing Diabetes and its Complications
- Single Chip Metal Oxide Gas Sensor Array for Environment Monitoring
- Nanostructured High Performance Gas sensors
Vice President of Meetings
Kazunari Ishimaru
Vice President of Membership
Patrick Fay - Compound Semiconductors
Dept. of Electrical Engineering, IN, USA
Patrick Fay received a B.S. degree in Electrical Engineering from the University of Notre Dame in 1991, followed by the M.S. and Ph.D. degrees in Electrical Engineering from the University of Illinois at Urbana-Champaign in 1993 and 1996, respectively. He joined the faculty of the Department of Electrical Engineering at the University of Notre Dame in 1997, where he currently a professor as well as the director of the Notre Dame Nanofabrication Facility. His research interests include the design, fabrication, and characterization of III-V microwave and millimeter-wave electronic devices and circuits, power devices, and high-speed optoelectronic devices and optoelectronic integrated circuits. His research also includes the development and use of micromachining techniques for the fabrication of microwave and millimeter-wave components and packaging. Prof. Fay was awarded the Department of Electrical Engineering’s Outstanding Teacher award in 1998 and 2018, and Notre Dame's College of Engineering’s Outstanding Teacher award in 2015. He is a fellow of the IEEE, and Electron Device Society Distinguished Lecturer, and serves as an associate editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE Transactions on Electron Devices, and IEEE Transactions on Microwave Theory and Techniques.
Lecture Topics
- III-N Devices and Integration for Millimeter-Wave and Power Applications
- Vertical GaN Devices and Epitaxial Lift-Off Processing for High Performance Power Applications
- Advances in III-N Devices for Power and Internet of Things Applications
- III-N Nanowire FETs for Low-Power Applications
- Advanced Tunneling-Based Devices for mm-Wave Sensing and Imaging
Vice President of Technical Committees
John Dallesasse - Associate Professor
University of Illinois at Urbana-Champaign
Vice President of Strategic Directions
Paul Berger - Fellow
Paul R. Berger
Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio, USA
Tampere University, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, Tampere, Finland
Lecture Topics:
- Si-based Resonant Interband Tunnel Diodes for Quantum Functional and Multi-level Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS
- Organic Photovoltaics: An Introduction to OPV plus Plasmonic enhancements (i.e. point-of-use energy harvesting, conformable to flexible and curved surfaces)
- Passive Millimeter Wave Imaging for Security and Safety via Si-based Backward Diode Sensors (i.e. detect concealed weapons and airplane safety for sight through fog, smoke and light rain)
- Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage
- Nitride-Based Resonant Tunneling Structures for Terahertz Gain
- Unipolar-doped Co-Tunneling Structures: A new pathway for efficient light emission without P-type doping
- Solar-Powered Humanitarian Engineering: Tanzania, Colombia & USA
Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.
Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. Prof. Berger was also a Finnish Distinguished Professor (FiDiPro) at Tampere University of Technology (2014-2019), and he continues as a Fulbright-Nokia Distinguished Chair in Information and Communications Technologies (2020-2022) with the newly merged Tampere University.
He has authored over 240 referred publications and presentations with another ~100 plenary, keynote, invited talks, 5 book sections and been issued 25 patents with 3 more pending from 60+ disclosures with a Google Scholar H-index of 35. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), Lumley Research Awards (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, DRC, ISDRS, EDTM and IFETC meetings. He will be hosting the IFETC in ’21 as General Chair. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapter. In addition, he is an elected member-at-large to the IEEE EDS Board of Governors (19’-21’), where he is also Vice Present of Strategic Directions (20’-21’) and a member of the EDS Finance Committee.
He is an IEEE EDS Fellow (2011) and Distinguished Lecturer (since 2011), as well as a Senior member of the Optical Society of America. He has received $9.9M in USA funding as lead PI, with an additional $26M as Co-PI in USA and €8.8M in funding through his Finnish partnerships. Altogether, he has received ~$47.5M in research funding.
Prof. Berger has established significant humanitarian engineering projects across the world with an emphasis on solar-power and sustainability. After completing a 6 year presence in Haiti to electrify remote schools with solar powered LED lighting as an Alternative Spring Break, Berger re-established two new international programs. (1) One through OSU’s Office of International Affairs, has traveled to Arusha, Tanzania with a group of engineering students from different majors to design, build and install a solar powered LED lighting system for an orphanage. (2) Additionally, through IEEE’s Humanitarian Activities Committee, Berger also proposed, and was funded, to provide solar-powered desalinization for the indigenous Wayúu peoples living in the Guajira peninsula desert. Also, the IEEE Electron Device Society has provided Berger additional funds to extend the Colombia project into 2020.
EDS BoG Members-at-Large are elected for a three-year term (maximum two terms) with voting privileges for all society matters, including Elections, and Constitution & Bylaws changes.
2021 Elected Member
Paul Berger - Fellow
Paul R. Berger
Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio, USA
Tampere University, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, Tampere, Finland
Lecture Topics:
- Si-based Resonant Interband Tunnel Diodes for Quantum Functional and Multi-level Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS
- Organic Photovoltaics: An Introduction to OPV plus Plasmonic enhancements (i.e. point-of-use energy harvesting, conformable to flexible and curved surfaces)
- Passive Millimeter Wave Imaging for Security and Safety via Si-based Backward Diode Sensors (i.e. detect concealed weapons and airplane safety for sight through fog, smoke and light rain)
- Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage
- Nitride-Based Resonant Tunneling Structures for Terahertz Gain
- Unipolar-doped Co-Tunneling Structures: A new pathway for efficient light emission without P-type doping
- Solar-Powered Humanitarian Engineering: Tanzania, Colombia & USA
Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.
Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. Prof. Berger was also a Finnish Distinguished Professor (FiDiPro) at Tampere University of Technology (2014-2019), and he continues as a Fulbright-Nokia Distinguished Chair in Information and Communications Technologies (2020-2022) with the newly merged Tampere University.
He has authored over 240 referred publications and presentations with another ~100 plenary, keynote, invited talks, 5 book sections and been issued 25 patents with 3 more pending from 60+ disclosures with a Google Scholar H-index of 35. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), Lumley Research Awards (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, DRC, ISDRS, EDTM and IFETC meetings. He will be hosting the IFETC in ’21 as General Chair. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapter. In addition, he is an elected member-at-large to the IEEE EDS Board of Governors (19’-21’), where he is also Vice Present of Strategic Directions (20’-21’) and a member of the EDS Finance Committee.
He is an IEEE EDS Fellow (2011) and Distinguished Lecturer (since 2011), as well as a Senior member of the Optical Society of America. He has received $9.9M in USA funding as lead PI, with an additional $26M as Co-PI in USA and €8.8M in funding through his Finnish partnerships. Altogether, he has received ~$47.5M in research funding.
Prof. Berger has established significant humanitarian engineering projects across the world with an emphasis on solar-power and sustainability. After completing a 6 year presence in Haiti to electrify remote schools with solar powered LED lighting as an Alternative Spring Break, Berger re-established two new international programs. (1) One through OSU’s Office of International Affairs, has traveled to Arusha, Tanzania with a group of engineering students from different majors to design, build and install a solar powered LED lighting system for an orphanage. (2) Additionally, through IEEE’s Humanitarian Activities Committee, Berger also proposed, and was funded, to provide solar-powered desalinization for the indigenous Wayúu peoples living in the Guajira peninsula desert. Also, the IEEE Electron Device Society has provided Berger additional funds to extend the Colombia project into 2020.
Navakanta Bhat
Brief bio: Navakanta Bhat received his Ph.D. in Electrical Engineering from Stanford University, in 1996. Then he worked at Motorola’s Advanced Products R&D Lab in Austin, TX until 1999. He is currently a Professor at the Indian Institute of Science (IISc), Bangalore. His current research is on Nanoelectronics and Sensors. He has more than 200 publications and 20 patents. He was instrumental in creating the National Nanofabrication Centre (NNfC) at IISc, benchmarked against the best university facilities in the world. He is the recipient of IBM Faculty award and Outstanding Research Investigator award (Govt. of India). He is a Fellow of INAE. He was the Editor of IEEE Transactions on Electron Devices, during 2013-2016. He is the member of the National Innovation Council in Nanoelectronics. He is the founder and promoter of a startup called “PathShodh Healthcare”, which builds point-of-care diagnostics for diabetes and its complications.
Lecturer Topics:
- Nanotransistors with 2D materials : Opportunities and Challenges
- Electrochemical Biosensors for managing Diabetes and its Complications
- Single Chip Metal Oxide Gas Sensor Array for Environment Monitoring
- Nanostructured High Performance Gas sensors
Kazunari Ishimaru
Bill Nehrer
Murty Polavarapu
Mail Stop MVA01-016
Camilo Velez Cuervo
Merlyne de Souza
2022 Elected Member
Constantin Bulucea - Distinguished Member of the Technical Staff
USA
Constantin Bulucea (S'69–M'70–SM'88–F'04- LF'13) was born in Râmnicu Vâlcea, Romania. In 1969, he got a one-year government scholarship at the University of California, Berkeley, where he received a M.S. degree in Electrical Engineering. In 1974, he received his Doctor degree in Electronics from the Polytechnic Institute of Bucharest with a thesis on hot-carrier injection in silicon. His original results were communicated at IEDM and published in the old (W. Crawford Dunlap’s) Solid-State Electronics. In Romania, he created the Annual Conference on Semiconductors, now an international IEEE event. His best known contribution from that period is the explanation of Grove’s breakdown voltage collapse in silicon gate-controlled devices as a breakdown-location switching phenomenon, as proven by 2-D computer calculations and measurements. Among his “firsts” from the same time is the direct proof, by DC recordings (rather than by capacitive inferences) of nA-range hot-carrier currents through silicon dioxide.
In 1886, Dr. Bulucea defected to the US, where he first developed a device/process architecture for rugged trench power DMOS transistors, while working for Siliconix (1987-1989). His inventive design became a world standard in the following years. Later on, at National Semiconductor (NS), he was a member of the Fairchild Research Center, then joined the company’s process development group. There, he enjoyed the last years of Silicon Valley's "Happy Scaling" as the architect of several CMOS processes for high-performance analog and mixed-signal applications (2000-2010). In 2011, he became a Distinguished Member of the Technical Staff of Texas Instruments (TI), as a result of TI's acquisition of NSC. Throughout his tenure at NS and TI, he received three Patent of the Year awards, in recognition of the use of his inventions in high-volume manufacturing. He has published over 50 technical articles in major journals and has 70 issued US patents. In 2001, he was elected an Honorary Member of the Romanian Academy and in 2004 became an IEEE Fellow "for contributions to transistor engineering in the area of power electronics".
Dr. Bulucea has been a member of the Technical Committees of the Bipolar Circuits and Technology Meeting (BCTM) and of the VLSI Technology Symposium. Between 2004 and 2012 he was the editor of IEEE Electron Device Letters (EDL) for analog and mixed-signals technology. His IEEE responsibilities include membership in the IEEE/EDS Fellow Evaluation Committee (2018, 2019) and the IEEE/EDS Publications Committee (current).
Daniel Mauricio Camacho Montejo
Folsom Design Center
John Dallesasse - Associate Professor
University of Illinois at Urbana-Champaign
Mario Lanza - Senior Member
Mario Lanza is an Associate Professor of Materials Science and Engineering at the King Abdullah University of Science and Technology (KAUST), in Saudi Arabia since October 2020. Dr. Lanza got his PhD in Electronic Engineering with honors in 2010 at Universitat Autonoma de Barcelona. During the PhD he was a visiting scholar at The University of Manchester (UK) and Infineon Technologies (Germany). In 2010-2011 he was NSFC postdoc at Peking University, and in 2012-2013 he was Marie Curie postdoc at Stanford University. On October 2013 he joined Soochow University as Associate Professor, and in March 2017 he was promoted to Full Professor. Prof. Lanza has published over 120 research papers, including Science, Nature Electronics, Nature Chemistry, and IEDM, edited a book for Wiley-VCH, and registered four patents (one of them granted with 5.6 Million CNY). Prof. Lanza has received the 2017 Young Investigator Award from Microelectronic Engineering (Elsevier), and the 2015 Young 1000 Talent award (among others), and in 2019 he was appointed as Distinguished Lecturer of the Electron Devices Society (IEEE-EDS). Prof. Lanza is Associate Editor of Scientific Reports (Nature) and Microelectronic Engineering (Elsevier), and serves in the board of many others, like Advanced Electronic Materials (Wiley-VCH), Nanotechnology and Nano Futures (IOP). He is also an active member of the technical committee of several world-class international conferences, including IEEE-IEDM, IEEE-IRPS, IEEE-IPFA and APS. Prof. Lanza leads a research group formed by 10-15 PhD students and postdocs, and they investigate how to improve electronic devices using 2D materials, with special emphasis on two-dimensional (layered) dielectrics and memristors for non-volatile digital information storage and artificial intelligence computing systems.
Lecture title:
- Two-dimensional materials based electronic devices
Geok Ing Ng
Claudio Paoloni - Prof.
Engineering Department
Claudio Paoloni received the degree cum laude in Electronic Engineering from the University of Rome “Sapienza”, Rome, Italy, in 1984. Since 2012, he has been Cockcroft Chair and Professor of Electronics with the Engineering Department, Lancaster University, Lancaster, U.K. Since 2015, he has been the Head of Engineering Department. He is author of more than 230 articles in international journals and conference proceedings in the field of high frequency electronics, with focus on millimetre waves and THz vacuum electronics devices. His research interests span over different major areas: millimetre wave vacuum electron devices and wide band microwave integrate circuits, slow wave structures for traveling wave tubes, novel millimetre wave wireless networks, 5G. He was Guest Editor for the Special Issue of Transaction on Electron Devices on Vacuum Electronics (June 2014). He served as Local Organisation Chair of IEEE International Vacuum Electronic Conference 2009 (IVEC 2009) and as Conference Chair of UK/Europe China Millimeter Wave and THz Technology Workshop 2013 (UCMMT2013) held in Rome. He was Chair of the Technical Programme Committee of the International Vacuum Electronics Conference 2017 (IVEC) held in London, 24-26 April 2017. He was General Chair of “2nd Toward Terahertz Communication Workshop”, Brussels, March 2019. He was General Chair of the workshop “From Evolution to Revolution, a roadmap for beyond 5G” at 2019 IEEE 2nd 5G World Forum (5GWF’19) in Dresden, Germany. He was in Coordinating group of the FP7 OPTHER (Optically Driven THz Amplifier) to realize the 1 THz Traveling Wave Tube amplifier. He is the coordinator of the European Commission H2020 TWEETHER “Traveling wave tube based W-band wireless network for high data rate, distribution, spectrum and energy efficiency” and of the European Commission H2020 ULTRAWAVE “Ultra-capacity wireless layer beyond 100 GHz based on millimeter wave Traveling Wave Tubes”. He is Chair of the IEEE Electron Devices Society Vacuum Electronics Technical Committee (2017 – present) and member of the same committee (2010 – 2016). He was member of the IEEE Electron Device Society Meeting Committee (2017-2019). He is IEEE Senior member (2010). He is Senior Fellow of the Higher Education Academy.
Hitoshi Wakabayashi
2023 Elected Member
Roger Booth
Xiaojun Guo - Optoelectronics, Display, Imaging
Xiaojun Guo is now Professor in Department of Electronic Engineering at Shanghai Jiao Tong University, China. He received the Bachelor degree from Jilin University (China) in 2002, and the Ph.D. degree from University of Surrey (UK) in 2007, both in electronic engineering. He worked on EDA for VLSIs in Department of Electronic Engineering at Tsinghua University during 2002-2003. His PhD research was on system-on-panel integration with low-temperature poly-Si TFTs. Before joining Shanghai Jiao Tong University in Aug. 2009, he had been working in Plastic Logic Ltd., Cambridge, UK, on research and development of printed polymer TFTs backplanes for flexible displays, and technology transfer for manufacturing. His group at Shanghai Jiao Tong University is now focusing on device and integration of printable thin film transistors and functional devices including displays, sensors and memories. He has authored or co-authored more than 60 technical papers in international journals and conference.
Edmundo A. Gutierrez-D. - Solid State Device Phenomena; Emerging Technologies and Devices
for Astrophysics, Mexico
Dr. Edmundo A. Gutiérrez-D. Got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008.
Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).
Francesca Iacopi
School of Electrical and Data Engineering | Faculty of Engineering & IT
Prof. Francesca Iacopi (PhD in EE, KULeuven, 2004) has 20 years’ experience in Materials and Devices for Semiconductor Technologies across industry and academia, with over 120 peer-reviewed publications and 9 granted patents. Her research emphasis is the translation of basic scientific advances in nanomaterials and novel device concepts into a wide range semiconductor technologies, covering Cu/Low-k interconnects, novel TFET devices, advanced packaging and heterogeneous integration. Research Scientist at IMEC (Belgium) over 1999-2009, she then took up a one -year Guest Professorship at the University of Tokyo (Japan). In 2010-2011 she directed the Chip-Package Interaction strategy for GLOBALFOUNDRIES (Ca, USA), before becoming full -time Academic in Australia in 2012, where she invented a process to obtain graphene on silicon wafers, with applications in integrated sensing and energy storage. She was recipient of an MRS Gold Graduate Student Award (2003), an Australian Research Council Future Fellowship (2012), and a Global Innovation Award at TechConnect in Washington DC (2014). She is a Fellow of the Institution of Engineers Australia, Senior Member IEEE and she is currently Head of Discipline, Communications and Electronics, of the Faculty of Engineering and IT at the University of Technology Sydney.
Lecture Topics
- Graphene on cubic silicon carbide: a platform on silicon for More-Than-Moore integrated technologies
Benjamin Iniguez - Senior Member
Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs. His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.
Lecture Topics
Compact device modeling
Semiconductor device parameter extraction
Physics of Thin-Film Transistors
Graphene and TMD devices
P Susthitha Menon
National University of Malaysia (UKM)
P Susthitha Menon is currently an Associate Professor at the Universiti Kebangsaan Malaysia (UKM) at Kuala Lumpur. She received her BSEE degree from (UKM) in 1998. As an Intel scholar, she worked at Intel Malaysia as a Product Engineer for mobile modules systems from 1999 to 2002. She then received her MSc and PhD (Distinction) degrees in 2005 and 2008 respectively from UKM, for the development of Si- and InGaAs-based interdigitated p-i-n photodiodes. At the University’s Institute of Micro-Engineering & Nanoelectronics (IMEN) she is specializing in the field of optoelectronics, nanophotonics, and robust engineering optimization. Susthitha is a Senior Member of IEEE. She is in the organizing team international conference ICSE by ED Malaysia Chapter for many years and is the Secretary of the IEEE Electron Devices Malaysia Chapter.
Manoj Saxena - Senior Member
University of Delhi
Manoj Saxena is an Associate Professor in Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India. He received B.Sc. (with honors), M. Sc., and Ph.D. degrees from the University of Delhi in 1998, 2000, and 2006 respectively. He has authored or coauthored 210 technical papers in international journals and various international and national conferences. His current research interests are in the areas of analytical modeling, design, and simulation of Optically controlled MESFET/MOSFET, silicon-on-nothing, insulated-shallow-extension, grooved/concave-gate MOSFETs, cylindrical gate MOSFET and Tunnel FET. He is a reviewer to many journals including Solid State Electronics, Journal of Physics: D Applied Physics and IEEE TED and EDL. Manoj is a Senior Member of IEEE and also Member of Institute of Physics (UK), Institution of Engineering and Technology (UK), National Academy of Sciences India (NASI) and International Association of Engineers (Hong Kong). Currently, he is the Secretary of EDS Delhi Chapter. For his voluntary contribution, Manoj received the outstanding EDS Volunteer recognition from EDS Chapters in the region in 2012.
Lecture Topics:
-Dielectric Pocket MOSFET: A Novel Device Architecture;
-Embedded Insulator based Novel Nanoscaled Novel MOSFET Structures Tunnel Field Effect Transistor and its Application as Highly Sensitive and Fast Biosensor
-Modeling and Simulation of Tunnel Field Effect Transistor Dual Material Junctionless Double Gate Transistor for Analog and Digital Performance
-Optimization of Asymmetric (Pi)π-Gate HEMT for Improved Reliability & Frequency Applications
Sumant Sood
