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ExCom & Elected Members-at-Large
FUTURE EDS EXCOM MEETINGS
3 February 2023 – Webex Meeting
6 March 2023 – In person – EDTM 3/7-10/23, Seoul, Korea
3 June 2023 – In person – BoG meetings, Cambridge, UK
18 August 2023 – Webex Meeting
14 October 2023 – In person - Austin, TX
9 December 2023 – In person IEDM/BoG Meetings, San Francisco, CA
The EDS Executive Committee (ExCom) is an 11 member body comprised of the society's officers (seated Presidents, Treasurer, Secretary), Standing Committee Vice Presidents, and the EDS Operations Director. The Executive Committee provides the Board of Governors with strategic vision and long-term planning for the Society, oversees the finances and operations of the Society, and proposes new initiatives as well as policy changes. The current ExCom members are listed below.
President: President-Elect assumes the position of President for a two-year term, (maximum one term) after serving as President-Elect for two years. The President has BoG voting privileges.
President Elect: Elected for a two-year term, maximum one term. The President-Elect has BoG voting privileges.
Secretary: Elected for a two-year term, no maximum terms. The Secretary has BoG voting privileges.
Treasurer: Elected for a two-year term, no maximum terms. The Treasurer has BoG voting privileges
Jr. & Sr. Past Presidents: have two-year terms and BoG voting privileges.
Vice Presidents: have two-year renewable terms and Forum voting privileges.
President
Ravi M. Todi
Fellow
Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
Lecuture Topic
- MOS Devices and Technology
President Elect
Bin Zhao - Fellow
Lecture Topics:
- Analog/Mixed-Signal/RF IC and Enabling Technologies
- High Performance VLSI Interconnect
Sr. Past President
Fernando Guarin - Fellow
Global Foundries
Lecture Topics:
Reliability and scaling of CMOS, SiGe Reliability
75th Anniversary of the Transistor Semiconductor Industry Perspective
Secretary
M.K. Radhakrishnan - Life Senior Member
MK Radhakrishnan (M’82, SM’94, LSM’18) is the Founder Director of NanoRel LLP -Technical Consultants providing analysis-based solutions to micro and nano electronic industries for improving reliability of devices. As a researcher in the area of semiconductor device failure physics for more than 35 years, he worked with industries (ST Microelectronic and Philips), research institutions (Institute of Microelectronics, Singapore and Indian Space Research Organization) and in academia with National University of Singapore. As a technical consultant he works with many MNCs and also provides training on device failure analysis & reliability to various Industries, Universities and Research Centres.
Lecture Topics:
- Circa 70 – Semiconductor Device Progression and Challenges towards Nanoera.
- Interface Physics and Analysis Challenges in Silicon Nanodevices
- Are the Progressions towards the “Benefit of Humanity”? - A Failure Analyst’s View
Treasurer
Roger Booth
Qualcomm
Vice President of Regions and Chapters
Murty Polavarapu
Space Electronics Solutions
Mail Stop MVA01-016
Vice President of Publications and Products
Arokia Nathan - Fellow
Darwin College, University of Cambridge
IEEE Region 8 (Europe, Middle East and Africa)
Arokia Nathan is currently a Bye-Fellow and Tutor at Darwin College, University of Cambridge, UK. He received his PhD degree in electrical engineering from the University of Alberta, Canada, in 1988. He joined LSI Logic USA, and subsequently, the Institute of Quantum Electronics, ETH Zürich, Switzerland, before joining the Electrical and Computer Engineering Department at the University of Waterloo, Canada. In 2006, he joined the London Centre for Nanotechnology, University College London, UK, as the Sumitomo Chair of Nanotechnology. He moved to Cambridge University in 2011 as the Chair of Photonic Systems and Displays. He has more than 600 publications, including six books, and more that 110 patents and four spin-off companies. He is the co-founder of Cambridge Touch Technologies, UK and VISBAN Networks UK where he is a Director and Chief Technical Officer. He is a Fellow of IEEE and SID, a Distinguished Lecturer of the IEEE Electron Devices Society and Sensor Council, a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK), and winner of the 2020 IEEE EDS JJ Ebers Award.
Lecture Topics
- Flexible Electronics
- Oxide Semiconductor Electronics
- Ultralow Power Transistors and Sensor Interfaces
- Active Matrix OLED Displays
- TFT Compact Modeling and Parameter Extraction
- Nanoscale Large Area Electronics
Vice President of Educational Activities
Navakanta Bhat
Indian Institute of Science
Brief bio: Navakanta Bhat received his Ph.D. in Electrical Engineering from Stanford University, in 1996. Then he worked at Motorola’s Advanced Products R&D Lab in Austin, TX until 1999. He is currently a Professor at the Indian Institute of Science (IISc), Bangalore. His current research is on Nanoelectronics and Sensors. He has more than 200 publications and 20 patents. He was instrumental in creating the National Nanofabrication Centre (NNfC) at IISc, benchmarked against the best university facilities in the world. He is the recipient of IBM Faculty award and Outstanding Research Investigator award (Govt. of India). He is a Fellow of INAE. He was the Editor of IEEE Transactions on Electron Devices, during 2013-2016. He is the member of the National Innovation Council in Nanoelectronics. He is the founder and promoter of a startup called “PathShodh Healthcare”, which builds point-of-care diagnostics for diabetes and its complications.
Lecturer Topics:
- Nanotransistors with 2D materials : Opportunities and Challenges
- Electrochemical Biosensors for managing Diabetes and its Complications
- Single Chip Metal Oxide Gas Sensor Array for Environment Monitoring
- Nanostructured High Performance Gas sensors
Vice President of Meetings
Kazunari Ishimaru
Kioxia Corporation
Vice President of Membership
Merlyne de Souza
The University of Sheffield
Chair in Microelectronics, EEE DepartmentIEEE Region 8 (Europe, Middle East and Africa)
I graduated with a BSc in Physics and Mathematics (1985) from the University of Mumbai, a BE. in Electronics and Communications Engineering (1988) from the Indian Institute of Science, Bangalore and a PhD from the University of Cambridge (1994). I joined as a Junior Research fellow in ‘95, was promoted to a Senior Research fellow in ‘98 and was appointed Professor in Electronics and Materials at the Emerging Technologies Research Centre, De Montfort University in 2003. I joined the EEE department at Sheffield as Professor of Microelectronics in 2007. I work in multi-disciplinary research focused on the physics of devices, materials and their microelectronic applications in computing, communications and energy conversion.
Vice President of Technical Committees
John Dallesasse
Department of Electrical and Computer Engineering
University of Illinois at Urbana-Champaign
John Dallesasse is a Professor of Electrical and Computer Engineering and Associate Dean in the Grainger College of Engineering at the University of Illinois at Urbana-Champaign, where he’s been for over 10 years. He also has over 20 years of industry experience in technology development and executive management, having led technically diverse and geographically distributed engineering teams. Prior to joining UIUC he was the Chief Technology Officer, Vice President, and co-founder of Skorpios Technologies where he was responsible for developing innovative methods for heterogeneous integration of compound semiconductors with silicon. His technical contributions include, with Nick Holonyak, Jr., the discovery of III‑V Oxidation, which has become an enabling process technology for the fabrication of Vertical-Cavity Surface-Emitting Lasers (VCSELs) for optical networking, 3D imaging, and LIDAR applications. John has over 100 publications and conference presentations, and 50 issued patents. He serves as the Chair of the Steering Committee for the IEEE Journal of Lightwave Technology, the Chair of the Steering Committee for the IEEE Transactions on Semiconductor Manufacturing, and as the Vice President of Technical Committees for IEEE-EDS. He is a Fellow of the IEEE and Optica.
Vice President of Strategic Directions
Douglas P. Verret - Fellow
President
Ravi M. Todi

Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
Lecuture Topic
- MOS Devices and Technology
President Elect
Bin Zhao - Fellow

Lecture Topics:
- Analog/Mixed-Signal/RF IC and Enabling Technologies
- High Performance VLSI Interconnect
Sr. Past President
Fernando Guarin - Fellow

Lecture Topics:
Reliability and scaling of CMOS, SiGe Reliability
Secretary
M.K. Radhakrishnan - Life Senior Member

MK Radhakrishnan (M’82, SM’94, LSM’18) is the Founder Director of NanoRel LLP -Technical Consultants providing analysis-based solutions to micro and nano electronic industries for improving reliability of devices. As a researcher in the area of semiconductor device failure physics for more than 35 years, he worked with industries (ST Microelectronic and Philips), research institutions (Institute of Microelectronics, Singapore and Indian Space Research Organization) and in academia with National University of Singapore. As a technical consultant he works with many MNCs and also provides training on device failure analysis & reliability to various Industries, Universities and Research Centres.
Lecture Topics:
- Circa 70 – Semiconductor Device Progression and Challenges towards Nanoera.
- Interface Physics and Analysis Challenges in Silicon Nanodevices
- Are the Progressions towards the “Benefit of Humanity”? - A Failure Analyst’s View
Treasurer
Roger Booth

Vice President of Regions and Chapters
Murty Polavarapu

Mail Stop MVA01-016
Vice President of Publications and Products
Arokia Nathan - Fellow

Arokia Nathan is currently a Bye-Fellow and Tutor at Darwin College, University of Cambridge, UK. He received his PhD degree in electrical engineering from the University of Alberta, Canada, in 1988. He joined LSI Logic USA, and subsequently, the Institute of Quantum Electronics, ETH Zürich, Switzerland, before joining the Electrical and Computer Engineering Department at the University of Waterloo, Canada. In 2006, he joined the London Centre for Nanotechnology, University College London, UK, as the Sumitomo Chair of Nanotechnology. He moved to Cambridge University in 2011 as the Chair of Photonic Systems and Displays. He has more than 600 publications, including six books, and more that 110 patents and four spin-off companies. He is the co-founder of Cambridge Touch Technologies, UK and VISBAN Networks UK where he is a Director and Chief Technical Officer. He is a Fellow of IEEE and SID, a Distinguished Lecturer of the IEEE Electron Devices Society and Sensor Council, a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK), and winner of the 2020 IEEE EDS JJ Ebers Award.
Lecture Topics
- Flexible Electronics
- Oxide Semiconductor Electronics
- Ultralow Power Transistors and Sensor Interfaces
- Active Matrix OLED Displays
- TFT Compact Modeling and Parameter Extraction
- Nanoscale Large Area Electronics
Vice President of Educational Activities
Navakanta Bhat

Brief bio: Navakanta Bhat received his Ph.D. in Electrical Engineering from Stanford University, in 1996. Then he worked at Motorola’s Advanced Products R&D Lab in Austin, TX until 1999. He is currently a Professor at the Indian Institute of Science (IISc), Bangalore. His current research is on Nanoelectronics and Sensors. He has more than 200 publications and 20 patents. He was instrumental in creating the National Nanofabrication Centre (NNfC) at IISc, benchmarked against the best university facilities in the world. He is the recipient of IBM Faculty award and Outstanding Research Investigator award (Govt. of India). He is a Fellow of INAE. He was the Editor of IEEE Transactions on Electron Devices, during 2013-2016. He is the member of the National Innovation Council in Nanoelectronics. He is the founder and promoter of a startup called “PathShodh Healthcare”, which builds point-of-care diagnostics for diabetes and its complications.
Lecturer Topics:
- Nanotransistors with 2D materials : Opportunities and Challenges
- Electrochemical Biosensors for managing Diabetes and its Complications
- Single Chip Metal Oxide Gas Sensor Array for Environment Monitoring
- Nanostructured High Performance Gas sensors
Vice President of Meetings
Kazunari Ishimaru

Vice President of Membership
Merlyne de Souza

Chair in Microelectronics, EEE Department
I graduated with a BSc in Physics and Mathematics (1985) from the University of Mumbai, a BE. in Electronics and Communications Engineering (1988) from the Indian Institute of Science, Bangalore and a PhD from the University of Cambridge (1994). I joined as a Junior Research fellow in ‘95, was promoted to a Senior Research fellow in ‘98 and was appointed Professor in Electronics and Materials at the Emerging Technologies Research Centre, De Montfort University in 2003. I joined the EEE department at Sheffield as Professor of Microelectronics in 2007. I work in multi-disciplinary research focused on the physics of devices, materials and their microelectronic applications in computing, communications and energy conversion.
Vice President of Technical Committees
John Dallesasse

University of Illinois at Urbana-Champaign
John Dallesasse is a Professor of Electrical and Computer Engineering and Associate Dean in the Grainger College of Engineering at the University of Illinois at Urbana-Champaign, where he’s been for over 10 years. He also has over 20 years of industry experience in technology development and executive management, having led technically diverse and geographically distributed engineering teams. Prior to joining UIUC he was the Chief Technology Officer, Vice President, and co-founder of Skorpios Technologies where he was responsible for developing innovative methods for heterogeneous integration of compound semiconductors with silicon. His technical contributions include, with Nick Holonyak, Jr., the discovery of III‑V Oxidation, which has become an enabling process technology for the fabrication of Vertical-Cavity Surface-Emitting Lasers (VCSELs) for optical networking, 3D imaging, and LIDAR applications. John has over 100 publications and conference presentations, and 50 issued patents. He serves as the Chair of the Steering Committee for the IEEE Journal of Lightwave Technology, the Chair of the Steering Committee for the IEEE Transactions on Semiconductor Manufacturing, and as the Vice President of Technical Committees for IEEE-EDS. He is a Fellow of the IEEE and Optica.
Vice President of Strategic Directions
Douglas P. Verret - Fellow
EDS BoG Members-at-Large are elected for a three-year term (maximum two terms) with voting privileges for all society matters, including Elections, and Constitution & Bylaws changes. Board of Governors (BoG) consists of 22 elected members-at-large plus the President, the President-Elect, the Junior and Senior Past Presidents, the Secretary, and the Treasurer.
Elected Member Expiring 2023
Roger Booth

Xiaojun Guo - Optoelectronics, Display, Imaging

Xiaojun Guo is now Professor in Department of Electronic Engineering at Shanghai Jiao Tong University, China. He received the Bachelor degree from Jilin University (China) in 2002, and the Ph.D. degree from University of Surrey (UK) in 2007, both in electronic engineering. He worked on EDA for VLSIs in Department of Electronic Engineering at Tsinghua University during 2002-2003. His PhD research was on system-on-panel integration with low-temperature poly-Si TFTs. Before joining Shanghai Jiao Tong University in Aug. 2009, he had been working in Plastic Logic Ltd., Cambridge, UK, on research and development of printed polymer TFTs backplanes for flexible displays, and technology transfer for manufacturing. His group at Shanghai Jiao Tong University is now focusing on device and integration of printable thin film transistors and functional devices including displays, sensors and memories. He has authored or co-authored more than 60 technical papers in international journals and conference.
Lecture Titles
-Thin-fi lm transistor for Flexible Heterogeneous Integration
-Organic thin-fi lm Transistor for Display and Sensor Integration
-Low power Flexible Hybrid Integration for IoT
-Active-Matrix Backplane Design and Integration for Advanced Displays
Edmundo A. Gutierrez-D. - Solid State Device Phenomena; Emerging Technologies and Devices

for Astrophysics, Mexico
Dr. Edmundo A. Gutiérrez-D. Got his PhD in 1993 from the Catholic University of Leuven, Belgium with the thesis entitled “Electrical performance of submicron CMOS technologies from 300 K to 4.2 K”. From 1989 to 1993, while working for his PhD, served as a research assistant at the Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. In 1996 was guest Professor at Simon Fraser University, Vancouver, Canada. In 1996 spent two months as an invited lecturer at the Sao Paulo University, Brazil. In 2000 acted as Design Manager of the Motorola Mexico Center for Semiconductor Technology. In 2002 was invited lecturer at the Technical University of Vienna, Austria. In 2005 joined the Intel Mexico Research Center as technical Director. Currently he holds a Professor position at the National Institute for Astrophysics, Optics and Electronics (INAOE), in Puebla, Mexico. Prof. Gutiérrez-D. is an IEEE senior member since 2008.
Professor Gutiérrez-D. has published over 100 scientific publications and conferences in the field of semiconductor device physics, has supervised 5 M.Sc. and 10 Ph.D. thesis, and is author of the book “Low Temperature Electronics, Physics, Devices, Circuits and Applications” published by Academic Press in 2000. Prof. Gutiérrez-D. is member of the Mexico National System of Researchers and technical reviewer for the Mexico National Council for Science and Technology (CONACyT).
Francesca Iacopi

School of Electrical and Data Engineering | Faculty of Engineering & IT
Prof. Francesca Iacopi (PhD in EE, KULeuven, 2004) has 20 years’ experience in Materials and Devices for Semiconductor Technologies across industry and academia, with over 120 peer-reviewed publications and 9 granted patents. Her research emphasis is the translation of basic scientific advances in nanomaterials and novel device concepts into a wide range semiconductor technologies, covering Cu/Low-k interconnects, novel TFET devices, advanced packaging and heterogeneous integration. Research Scientist at IMEC (Belgium) over 1999-2009, she then took up a one -year Guest Professorship at the University of Tokyo (Japan). In 2010-2011 she directed the Chip-Package Interaction strategy for GLOBALFOUNDRIES (Ca, USA), before becoming full -time Academic in Australia in 2012, where she invented a process to obtain graphene on silicon wafers, with applications in integrated sensing and energy storage. She was recipient of an MRS Gold Graduate Student Award (2003), an Australian Research Council Future Fellowship (2012), and a Global Innovation Award at TechConnect in Washington DC (2014). She is a Fellow of the Institution of Engineers Australia, Senior Member IEEE and she is currently Head of Discipline, Communications and Electronics, of the Faculty of Engineering and IT at the University of Technology Sydney.
Lecture Topics
- Graphene on cubic silicon carbide: a platform on silicon for More-Than-Moore integrated technologies
Benjamin Iniguez - Senior Member

Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs. His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.
Lecture Topics
Compact device modeling
Semiconductor device parameter extraction
Physics of Thin-Film Transistors
Graphene and TMD devices
P Susthitha Menon

National University of Malaysia (UKM)
P Susthitha Menon is currently an Associate Professor at the Universiti Kebangsaan Malaysia (UKM) at Kuala Lumpur. She received her BSEE degree from (UKM) in 1998. As an Intel scholar, she worked at Intel Malaysia as a Product Engineer for mobile modules systems from 1999 to 2002. She then received her MSc and PhD (Distinction) degrees in 2005 and 2008 respectively from UKM, for the development of Si- and InGaAs-based interdigitated p-i-n photodiodes. At the University’s Institute of Micro-Engineering & Nanoelectronics (IMEN) she is specializing in the field of optoelectronics, nanophotonics, and robust engineering optimization. Susthitha is a Senior Member of IEEE. She is in the organizing team international conference ICSE by ED Malaysia Chapter for many years and is the Secretary of the IEEE Electron Devices Malaysia Chapter.
Manoj Saxena - Senior Member

University of Delhi
Manoj Saxena is an Associate Professor in Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi, India. He received B.Sc. (with honors), M. Sc., and Ph.D. degrees from the University of Delhi in 1998, 2000, and 2006 respectively. He has authored or coauthored 210 technical papers in international journals and various international and national conferences. His current research interests are in the areas of analytical modeling, design, and simulation of Optically controlled MESFET/MOSFET, silicon-on-nothing, insulated-shallow-extension, grooved/concave-gate MOSFETs, cylindrical gate MOSFET and Tunnel FET. He is a reviewer to many journals including Solid State Electronics, Journal of Physics: D Applied Physics and IEEE TED and EDL. Manoj is a Senior Member of IEEE and also Member of Institute of Physics (UK), Institution of Engineering and Technology (UK), National Academy of Sciences India (NASI) and International Association of Engineers (Hong Kong). Currently, he is the Secretary of EDS Delhi Chapter. For his voluntary contribution, Manoj received the outstanding EDS Volunteer recognition from EDS Chapters in the region in 2012.
Lecture Topics:
-Dielectric Pocket MOSFET: A Novel Device Architecture;
-Embedded Insulator based Novel Nanoscaled Novel MOSFET Structures Tunnel Field Effect Transistor and its Application as Highly Sensitive and Fast Biosensor
-Modeling and Simulation of Tunnel Field Effect Transistor Dual Material Junctionless Double Gate Transistor for Analog and Digital Performance
-Optimization of Asymmetric (Pi)π-Gate HEMT for Improved Reliability & Frequency Applications
Sumant Sood

Elected Member Expiring 2024
Mario Aleman

Paul Berger - Fellow

Paul R. Berger
Ohio State University, Department of Electrical and Computer Engineering, Columbus, Ohio, USA
Tampere University, Department of Electronics and Communications Engineering, Printed and Organic Electronics Group, Tampere, Finland
Lecture Topics:
- Si-based Resonant Interband Tunnel Diodes for Quantum Functional and Multi-level Circuitry (Mixed-Signal, Logic, and Low Power Embedded Memory) to Extend CMOS
- Organic Photovoltaics: An Introduction to OPV plus Plasmonic enhancements (i.e. point-of-use energy harvesting, conformable to flexible and curved surfaces)
- Passive Millimeter Wave Imaging for Security and Safety via Si-based Backward Diode Sensors (i.e. detect concealed weapons and airplane safety for sight through fog, smoke and light rain)
- Fully Printed Flexible Internet-of-Things Nodes with Energy Scavenging and Non-toxic Energy Storage
- Nitride-Based Resonant Tunneling Structures for Terahertz Gain
- Unipolar-doped Co-Tunneling Structures: A new pathway for efficient light emission without P-type doping
- Solar-Powered Humanitarian Engineering: Tanzania, Colombia & USA
Paul R. Berger (S’84 M’91 SM’97 F’11) is a Professor in Electrical & Computer Engineering at Ohio State University and Physics (by Courtesy). He is also a Distinguished Visiting Professor at Tampere University in Finland. He received the B.S.E. in engineering physics, and the M.S.E. and Ph.D. (1990) in electrical engineering, respectively, all from the University of Michigan, Ann Arbor. Currently, Dr. Berger is actively working on quantum tunneling devices, printable semiconductor devices & circuits for IoT, bioelectronics, novel devices, novel semiconductors and applied physics.
Formerly, he worked at Bell Laboratories, Murray Hill, NJ (1990-’92) and taught at the University of Delaware in Electrical and Computer Engineering (1992-2000). In 1999, Prof. Berger took a sabbatical leave while working first at the Max-Planck Institute for Polymer Research, Mainz, Germany and then moved on to Cambridge Display Technology, Ltd., Cambridge, United Kingdom. In 2008, Prof. Berger spent an extended sabbatical leave at IMEC (Interuniversity Microelectronics Center) in Leuven, Belgium while appointed as a Visiting Professor in the Department of Metallurgy and Materials Engineering, Katholieke Universiteit Leuven, Belgium. Prof. Berger was also a Finnish Distinguished Professor (FiDiPro) at Tampere University of Technology (2014-2019), and he continues as a Fulbright-Nokia Distinguished Chair in Information and Communications Technologies (2020-2022) with the newly merged Tampere University.
He has authored over 240 referred publications and presentations with another ~100 plenary, keynote, invited talks, 5 book sections and been issued 25 patents with 3 more pending from 60+ disclosures with a Google Scholar H-index of 35. Some notable recognitions for Dr. Berger were an NSF CAREER Award (1996), a DARPA ULTRA Sustained Excellence Award (1998), Lumley Research Awards (2006, 2011), a Faculty Diversity Excellence Award (2009) and Outstanding Engineering Educator for State of Ohio (2014). He has been on the Program and Advisory Committees of numerous conferences, including the IEDM, DRC, ISDRS, EDTM and IFETC meetings. He will be hosting the IFETC in ’21 as General Chair. He currently is the Chair of the Columbus IEEE EDS/Photonics Chapter and Faculty Advisor to Ohio State’s IEEE Student Chapter. In addition, he is an elected member-at-large to the IEEE EDS Board of Governors (19’-21’), where he is also Vice Present of Strategic Directions (20’-21’) and a member of the EDS Finance Committee.
He is an IEEE EDS Fellow (2011) and Distinguished Lecturer (since 2011), as well as a Senior member of the Optical Society of America. He has received $9.9M in USA funding as lead PI, with an additional $26M as Co-PI in USA and €8.8M in funding through his Finnish partnerships. Altogether, he has received ~$47.5M in research funding.
Prof. Berger has established significant humanitarian engineering projects across the world with an emphasis on solar-power and sustainability. After completing a 6 year presence in Haiti to electrify remote schools with solar powered LED lighting as an Alternative Spring Break, Berger re-established two new international programs. (1) One through OSU’s Office of International Affairs, has traveled to Arusha, Tanzania with a group of engineering students from different majors to design, build and install a solar powered LED lighting system for an orphanage. (2) Additionally, through IEEE’s Humanitarian Activities Committee, Berger also proposed, and was funded, to provide solar-powered desalinization for the indigenous Wayúu peoples living in the Guajira peninsula desert. Also, the IEEE Electron Device Society has provided Berger additional funds to extend the Colombia project into 2020.
Yogesh Singh Chauhan - Device and Process Modeling

Department of Electrical Eng., Kanpur, India
Talk titles:
· Modeling and Simulation of Negative Capacitance Transistors
· Compact Modeling of GaN HEMTs using industry standard ASM-HEMT model
· Physics and Modeling of FinFET and Nanosheet Transistors
· Analog and RF Modeling in BSIM-BULK model
· Physics and Modeling of FDSOI Transistors
Yogesh Singh Chauhan is an associate professor at Indian Institute of Technology Kanpur (IITK), India. He was with Semiconductor Research & Development Center at IBM Bangalore during 2007 – 2010; Tokyo Institute of Technology in 2010; University of California Berkeley during 2010-2012; and ST Microelectronics during 2003-2004. He is the developer of several industry standard models: ASM-GaN-HEMT model, BSIM-BULK model (formerly BSIM6), BSIM-CMG model and BSIM-IMG model. His research group is involved in developing compact models for GaN transistors, FinFET, Nanosheet/Gate-All-Around FETs, FDSOI transistors, Negative Capacitance FETs and 2D FETs. His research interests are characterization, modeling, and simulation of semiconductor devices.
He is the Editor of IEEE Transactions on Electron Devices and Distinguished Lecturer of the IEEE Electron Devices Society. He is the member of IEEE-EDS Compact Modeling Committee and fellow of Indian National Young Academy of Science (INYAS). He is the founding chairperson of IEEE Electron Devices Society U.P. chapter and Vice-chairperson of IEEE U.P. section. He has published more than 200 papers in international journals and conferences.
He received Ramanujan fellowship in 2012, IBM faculty award in 2013 and P. K. Kelkar fellowship in 2015, CNR Rao faculty award, Humboldt fellowship and Swarnajayanti fellowship in 2018. He has served in the technical program committees of IEEE International Electron Devices Meeting (IEDM), IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), IEEE European Solid-State Device Research Conference (ESSDERC), IEEE Electron Devices Technology and Manufacturing (EDTM), and IEEE International Conference on VLSI Design and International Conference on Embedded Systems.
Patrick Fay

Dept. of Electrical Engineering, IN, USA
Patrick Fay received a B.S. degree in Electrical Engineering from the University of Notre Dame in 1991, followed by the M.S. and Ph.D. degrees in Electrical Engineering from the University of Illinois at Urbana-Champaign in 1993 and 1996, respectively. He joined the faculty of the Department of Electrical Engineering at the University of Notre Dame in 1997, where he currently a professor as well as the director of the Notre Dame Nanofabrication Facility. His research interests include the design, fabrication, and characterization of III-V microwave and millimeter-wave electronic devices and circuits, power devices, and high-speed optoelectronic devices and optoelectronic integrated circuits. His research also includes the development and use of micromachining techniques for the fabrication of microwave and millimeter-wave components and packaging. Prof. Fay was awarded the Department of Electrical Engineering’s Outstanding Teacher award in 1998 and 2018, and Notre Dame's College of Engineering’s Outstanding Teacher award in 2015. He is a fellow of the IEEE, and Electron Device Society Distinguished Lecturer, and serves as an associate editor of the IEEE Transactions on Components, Packaging and Manufacturing Technology, IEEE Transactions on Electron Devices, and IEEE Transactions on Microwave Theory and Techniques.
Lecture Topics
- III-N Devices and Integration for Millimeter-Wave and Power Applications
- Vertical GaN Devices and Epitaxial Lift-Off Processing for High Performance Power Applications
- Advances in III-N Devices for Power and Internet of Things Applications
- III-N Nanowire FETs for Low-Power Applications
- Advanced Tunneling-Based Devices for mm-Wave Sensing and Imaging
Kazunari Ishimaru

Bill Nehrer

Merlyne de Souza

Chair in Microelectronics, EEE Department
I graduated with a BSc in Physics and Mathematics (1985) from the University of Mumbai, a BE. in Electronics and Communications Engineering (1988) from the Indian Institute of Science, Bangalore and a PhD from the University of Cambridge (1994). I joined as a Junior Research fellow in ‘95, was promoted to a Senior Research fellow in ‘98 and was appointed Professor in Electronics and Materials at the Emerging Technologies Research Centre, De Montfort University in 2003. I joined the EEE department at Sheffield as Professor of Microelectronics in 2007. I work in multi-disciplinary research focused on the physics of devices, materials and their microelectronic applications in computing, communications and energy conversion.
Elected Member Expiring 2025
Constantin Bulucea - Distinguished Member of the Technical Staff

USA
Constantin Bulucea (S'69–M'70–SM'88–F'04- LF'13) was born in Râmnicu Vâlcea, Romania. In 1969, he got a one-year government scholarship at the University of California, Berkeley, where he received a M.S. degree in Electrical Engineering. In 1974, he received his Doctor degree in Electronics from the Polytechnic Institute of Bucharest with a thesis on hot-carrier injection in silicon. His original results were communicated at IEDM and published in the old (W. Crawford Dunlap’s) Solid-State Electronics. In Romania, he created the Annual Conference on Semiconductors, now an international IEEE event. His best known contribution from that period is the explanation of Grove’s breakdown voltage collapse in silicon gate-controlled devices as a breakdown-location switching phenomenon, as proven by 2-D computer calculations and measurements. Among his “firsts” from the same time is the direct proof, by DC recordings (rather than by capacitive inferences) of nA-range hot-carrier currents through silicon dioxide.
In 1886, Dr. Bulucea defected to the US, where he first developed a device/process architecture for rugged trench power DMOS transistors, while working for Siliconix (1987-1989). His inventive design became a world standard in the following years. Later on, at National Semiconductor (NS), he was a member of the Fairchild Research Center, then joined the company’s process development group. There, he enjoyed the last years of Silicon Valley's "Happy Scaling" as the architect of several CMOS processes for high-performance analog and mixed-signal applications (2000-2010). In 2011, he became a Distinguished Member of the Technical Staff of Texas Instruments (TI), as a result of TI's acquisition of NSC. Throughout his tenure at NS and TI, he received three Patent of the Year awards, in recognition of the use of his inventions in high-volume manufacturing. He has published over 50 technical articles in major journals and has 70 issued US patents. In 2001, he was elected an Honorary Member of the Romanian Academy and in 2004 became an IEEE Fellow "for contributions to transistor engineering in the area of power electronics".
Dr. Bulucea has been a member of the Technical Committees of the Bipolar Circuits and Technology Meeting (BCTM) and of the VLSI Technology Symposium. Between 2004 and 2012 he was the editor of IEEE Electron Device Letters (EDL) for analog and mixed-signals technology. His IEEE responsibilities include membership in the IEEE/EDS Fellow Evaluation Committee (2018, 2019) and the IEEE/EDS Publications Committee (current).
Daniel Mauricio Camacho Montejo

Folsom Design Center
John Dallesasse

University of Illinois at Urbana-Champaign
John Dallesasse is a Professor of Electrical and Computer Engineering and Associate Dean in the Grainger College of Engineering at the University of Illinois at Urbana-Champaign, where he’s been for over 10 years. He also has over 20 years of industry experience in technology development and executive management, having led technically diverse and geographically distributed engineering teams. Prior to joining UIUC he was the Chief Technology Officer, Vice President, and co-founder of Skorpios Technologies where he was responsible for developing innovative methods for heterogeneous integration of compound semiconductors with silicon. His technical contributions include, with Nick Holonyak, Jr., the discovery of III‑V Oxidation, which has become an enabling process technology for the fabrication of Vertical-Cavity Surface-Emitting Lasers (VCSELs) for optical networking, 3D imaging, and LIDAR applications. John has over 100 publications and conference presentations, and 50 issued patents. He serves as the Chair of the Steering Committee for the IEEE Journal of Lightwave Technology, the Chair of the Steering Committee for the IEEE Transactions on Semiconductor Manufacturing, and as the Vice President of Technical Committees for IEEE-EDS. He is a Fellow of the IEEE and Optica.
Mario Lanza - Senior Member

Mario Lanza is an Associate Professor of Materials Science and Engineering at the King Abdullah University of Science and Technology (KAUST), in Saudi Arabia since October 2020. Dr. Lanza got his PhD in Electronic Engineering with honors in 2010 at Universitat Autonoma de Barcelona. During the PhD he was a visiting scholar at The University of Manchester (UK) and Infineon Technologies (Germany). In 2010-2011 he was NSFC postdoc at Peking University, and in 2012-2013 he was Marie Curie postdoc at Stanford University. On October 2013 he joined Soochow University as Associate Professor, and in March 2017 he was promoted to Full Professor. Prof. Lanza has published over 120 research papers, including Science, Nature Electronics, Nature Chemistry, and IEDM, edited a book for Wiley-VCH, and registered four patents (one of them granted with 5.6 Million CNY). Prof. Lanza has received the 2017 Young Investigator Award from Microelectronic Engineering (Elsevier), and the 2015 Young 1000 Talent award (among others), and in 2019 he was appointed as Distinguished Lecturer of the Electron Devices Society (IEEE-EDS). Prof. Lanza is Associate Editor of Scientific Reports (Nature) and Microelectronic Engineering (Elsevier), and serves in the board of many others, like Advanced Electronic Materials (Wiley-VCH), Nanotechnology and Nano Futures (IOP). He is also an active member of the technical committee of several world-class international conferences, including IEEE-IEDM, IEEE-IRPS, IEEE-IPFA and APS. Prof. Lanza leads a research group formed by 10-15 PhD students and postdocs, and they investigate how to improve electronic devices using 2D materials, with special emphasis on two-dimensional (layered) dielectrics and memristors for non-volatile digital information storage and artificial intelligence computing systems.
Lecture title:
- Two-dimensional materials based electronic devices
Lluis F. Marsal - Senior Member

Prof. Lluis F. Marsal is Distinguished Professor and full professor at the University Rovira i Virgili, Spain. Ph.D. from the University Politecnica de Catalunya, Spain, 1997. Postdoctoral researcher at the ECE, University of Waterloo, Canada (1998-1999). In 2014, he received the UniSA Distinguished Researcher Award, and the 2014 ICREA Academia Award from the Generalitat of Catalunya. Since 2019, he is the Chair of the Subcommittee for Regions/Chapters (SRC) Regions 8, IEEE- EDS. He was the Chair of Spain Chapter of the IEEE-EDS (2013-2018). He is a senior member of the IEEE and a member of the Distinguished Lecturer program of the EDS. He has co-authored more than 200 publications in international refereed journals, 2 books, 5 book chapters and 3 patents. His current research interests focus on organic solar cells and hybrid nanostructured materials for optoelectronic devices and low-cost technologies based on micro- and nanoporous materials for biosensing. Lecture Topics: Current progress and perspectives in polymer solar cells Nanostructured organic solar cells and polymers for flexible optoelectronic applications Photonic and optoelectronic devices based on porous materials Micro- and nanoporous materials for biosensing
Lecture Topics:
-Organic photovoltaic solar cells
-Nanostructured polymers and porous materials
-Photonic and optoelectronic devices
-Optical Biosensors
Geok Ing Ng - Compound Devices and RF Applications

Mayank Shrivastava - Compound Semiconductor Devices

India
Biography: Prof. Mayank Shrivastava is a faculty member at the Indian Institute of Science, Bangalore, and co-founder of AGNIT Semiconductors Pvt. Ltd. He is also instrumental in setting up a 300 Crore worth GaN prototyping Fab and leading a national effort on 2D material’s technology hub. He received his Ph.D. degree from the Indian Institute of Technology Bombay (2010). For his Ph.D. work, he received Excellence in Research award and the Industrial Impact award from IIT Bombay in 2010. He is among the first recipients of the Indian section of the American TR35 award (2010) and the first Indian to receive IEEE EDS Early Career Award (2015). He is also an Editor of IEEE Transactions on Electron Devices. Besides, he is an IEEE Electron Device’s Society (EDS) Distinguished Lecturer and an elected member of the IEEE EDS Board of Governors. He is the recipient of the prestigious DST Swarnjayanti Fellowship (2021), Abdul Kalam Technology Innovation National Fellowship from INAE-SERB (2021), and the VASVIK award (2021). He has received several other national awards and honors of high repute, like the National Academy of Sciences, India, (NASI) Young Scientist Platinum Jubilee Award – 2018; Indian National Academy of Science (INSA) Young Scientist Award - 2018; Indian National Academy of Engineering (INAE) Innovator Entrepreneur Award 2018 (Special commendation); Indian National Academy of Engineering (INAE) Young Engineer Award - 2017; INAE Young Associate (since 2017); Indian Academy of Sciences (IASc), Young Associate, 2018 – 2023; Ministry of Electronics & Information Technology (MeitY), Young Faculty Fellowship. Besides, he received best paper awards from several international conferences like Intel Corporation Asia academic forum, VLSI design Conference and EOSESD Symposium. Prof Shrivastava broadly works on applications of emerging materials like Gallium Nitride (GaN), atomically thin two-dimensional materials like Graphene and TMDCs, in electronic and electro-optic devices working closer to its fundamental limits (like the ability to handle extreme powers, ability to work at THz like ultra-high frequencies, or ability to compute information in unconventional ways). Currently, his group is developing few-atom thick devices & circuits, GaN-based ultra-high-power devices with high reliability, and devices/circuits for operation at THz frequencies. Besides, his group also works on developing novel ESD and High Voltage device concepts in advanced CMOS nodes. He held visiting positions in Infineon Technologies, Munich, Germany, from April 2008 to October 2008 and again from May 2010 to July 2010. He worked for Infineon Technologies, East Fishkill, NY, USA; IBM Microelectronics, Burlington, VT, USA; Intel Mobile Communications, Hopewell Junction, NY, USA; Intel Corp, Mobile and Communications Group, Munich, Germany between 2010 and 2013. He joined the Indian Institute of Science as a faculty member in the year 2013. Prof Shrivastava’s work has resulted in over 200 peer-reviewed publications (47 of these papers are in IRPS and IEDM, the two most prestigious conferences of IEEE EDS, and around 100 are in journals such as IEEE T-ED) and 47 patents. Most of these patents are either licensed by semiconductor companies or are in use in their products. More details are available at https://faculty.dese.iisc.ac.