IEEE Committee Representatives

Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.

 

Lecuture Topic

- MOS Devices and Technology

Prof. Quanxi Jia is a world-renowned scholar in materials science. He is the Empire Innovation Professor and National Grid Professor of Materials Research in the Department of Materials Design and Innovation (MDI) at the State University of New York at Buffalo. He also serves as scientific director of UB’s New York State Center of Excellence in Materials Informatics (CMI). He is IEEE Fellow elected from IEEE EDS. He has authored or co-authored more than 470 peer-reviewed journal articles, delivered more than 100 invited lectures, and holds 48 U.S. patents. He serves as the co-editor-in-chief of Materials Research Letters, and sits on the editorial board of several academic and professional journals. Before joining SUNY Buffalo (UB) as a Professor in 2016, he spent more 20 years at the Los Alamos National Laboratory and served as a Division Director there. He is an elected Fellow of the Los Alamos National Laboratory, Materials Research Society, American Physical Society, American Ceramic Society and American Association for the Advancement of Science. He is an ideal liaison between Electron Devices Society and the Materials community.

Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

Angèle Reinders is an Associate Professor of Sustainable Energy and Design in the Department of Design, Production and Management of University of Twente, the Netherland. Besides this, she was part-time affiliated with the Design for Sustainability program of Delft University of Technology, the Netherland, till 2015. Her present research focuses on achieving a better integration of photovoltaic (PV) solar energy and other sustainable energy technologies in systems and products by new design approaches. She has practical experience with design-driven research on PV systems, PV modules, PV powered boats, building integrated PV and product integrated PV as well as PV in smart grids. Recently she established the energy center ARISE at the Faculty of Engineering Technology of University of Twente. She has published about 100 papers, edited two books, and is a co-founding editor of IEEE Journal of Photovoltaics. Angèle is intensively involved in the organization of the annual IEEE Photovoltaic Specialists Conference and has a vast international experience and stayed at Fraunhofer ISE (Germany), World Bank (US), ENEA (Italy), Jakarta and Papua (Indonesia) and the Centre for Urban Energy (Canada) for her research. She holds an MSc in Experimental Physics and a PhD in Chemistry from Utrecht University in the field of monitoring and simulation of PV systems. She received her doctoral degree from the Faculty of Chemistry at Utrecht University in 1999. Her PhD dissertation covers the analysis and simulation of the field performance of photovoltaic solar energy systems. Angèle Reinders completed a master degree in Experimental Physics in 1993 at Utrecht University, specializing in material physics and energy physics.

Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.

 

Lecuture Topic

- MOS Devices and Technology