EDS publication representatives serve two-year renewable terms with no voting privileges on the EDS Forum.
Exploratory Solid-State Computational Devices and Circuits Steering Committee, Journal on
Biography: Sayeef Salahuddin is an assistant professor in the department of Electrical Engineering and Computer Sciences at the University of California, Berkeley. His research interests are in the field of electronic transport in small structures currently focusing on novel electronic and spintronic devices for low power logic and memory applications. Salahuddin introduced the concept of using interacting systems for ultra low energy switches, leading to the idea of negative capacitance transistors. He received the Kintarul Haque Gold Medal from Bangladesh University of Engineering and Technology in 2003, a Microelectronics Advanced Research Corporation / Focus Center Research Program Inventor Recognition Award in 2007, a UC Regents Junior Faculty Fellowship in 2009, a Hellman Faculty Fellowship in 2010, the NSF CAREER award in 2011, the IEEE Nanotechnology Early Career Award in 2012, an Air Force Office of Scientific Research Young Investigator Award in 2013, an Army Research Office Young Investigator Award in 2013 and best paper awards from the IEEE Transactions of VLSI Systems in 2013 and at the VLSI-TSA conference, 2013.
Applied Superconductivity Editorial Bd., Trans. On
Device and Materials Reliability Advisory Board, Transactions On
Andreas Kerber was born in Schnann, Austria. He received his Diploma in physics from the University of Innsbruck, Austria, in 2001 and a PhD in electrical engineering from the TU-Darmstadt, Germany in 2004 (granted with honors). He worked as an intern at Bell Laboratories, Lucent Technologies, Murray Hill, NJ, USA (1999-2000), at IMEC in Leuven, Belgium (2001-03) as Infineon Technologies assignee to International SEMATECH, for the Reliability Methodology Department at Infineon Technologies in Munich, Germany (2004-06), for AMD in Yorktown Heights, NY (2006-09), and as a Prinicpal Member of Technical Staff for GLOBALFOUNDRIES in Malta, NY (since 2009). Much of his work centered around Front-End-Of-Line (FEOL) reliability research with focus on metal gate / high-k CMOS technologies. He has co-authored over 100 papers in Journals and Conferences, is an IEEE senior member (since 2011) and an IEEE Distinguished Lecturer for the Electron Device Society (since 2016).
Reliability of scaled Metal Gate / High-K CMOS devices
Electron Devices, Transactions On (Editorial Board)
Khairul Alam - Compound Semiconductor Devices
Can Bayram - Optoelectronic Devices
Prof. Can Bayram is an Assistant Professor in the Department of Electrical and Computer Engineering of University of Illinois at Urbana-Champaign, IL, USA. He is an expert in III-V materials and photonic and electronic devices. He has performed more than 3,000+ epitaxial growths with metalorganic chemical vapor deposition (MOCVD) systems and fabricated detectors, light emitting diodes, solar cells, resonant tunneling diodes, and transistors in class 100 and 1000 cleanrooms totaling 20,000+ hrs equipment usage. His current research interests lie in the intersection of novel III-V materials, hetero-structures, and photonic and electronic quantum devices. Particularly, his research group explores novel materials, devices, and their 3D hetero-integration on unconventional platforms such as graphene and silicon and investigates heat transport across/through semiconductors; efficiency droop mechanisms and remedies in AlInGaN emitters; and ultra-fast THz photonics/electronics. Prof. Bayram’s work has been recognized widely. He is the recipient of the 2018 IUPAP Young Scientist Prize in Optics, 2018 IEEE Nanotechnology Council Early Career Award, a 2018 Dean’s Award for Excellence in Research for Assistant Professor, a 2018 Turkish American Scientists & Scholars Association Young Scholar Award, a 2017 NSF CAREER Award, the 2017 CS Mantech Best Student Paper Award, a 2016 AFOSR Young Investigator Award, the 2014 IEEE Electron Devices Society Early Career Award, and the Best Paper Award at the 11th International Conference on Infrared Optoelectronics. For his achievements in ultraviolet-to-terahertz engineering of III-V semiconductor materials and devices, OSA, SPIE, and IEEE recognized him with senior member status. Prof. Bayram worked as a Postdoctoral Research Scientist in the Silicon Technologies Division at the IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA from 2011 till 2014. His postdoctoral work at IBM on a novel means of thin film technology achieved record-breaking specific power solar cells and was featured on the cover of Advanced Energy Materials. He has – for the first time – integrated GaN-based devices on CMOS-compatible silicon substrates. This work was highlighted as the frontispiece in the Advanced Functional Materials issue. He demonstrated direct epitaxy of GaN on Graphene for the first time, as published in Nature Communications. Prof. Bayram received the Ph.D. degree from Prof. Manijeh Razeghi, Center for Quantum Devices, EECS of Northwestern University, IL, USA with a focus on Solid State and Photonics in 2011. His thesis work has demonstrated the first ultraviolet regime single photon detection, the first hybrid LED, and the first GaN intersubband devices. He received IEEE Electron Devices and IEEE Photonics Societies’ fellowship awards and the Laser Technology, Engineering and Applications Award from SPIE. He was an IBM and Link Foundation PhD fellow and the recipient of Boeing Engineering and Dow Sustainability Innovation awards.
Electrochemical and Solid-State Letters Advisory Board
Semiconductor Manufacturing Steering Committee, Trans. On
Simon Deleonibus - Fellow
Simon Deleonibus, retired from CEA-LETI on Jan 1st 2016 as Chief Scientist after 30 years of Research on Micro Nanoelectronics Devices Architectures including More Moore More than Moore and Beyond Moore domains emerging devices and architectures: MOSFET scaling technology(bulk, SOI and GeOI), Nanowires FETs ,Tunnel FETs, SET, Non Volatile memories ( Floating gate, RRAM -PCRAM,OxRAM ,CBRAM), Digital,Neuromorphic and Quantum Computing, Sequential/Monolithic and Packaging 3D integration, Interconnect, Field isolation, III-V Power devices, Photovoltaics, MEMS and NEMS, Passive devices, test and modeling/simulation,... and necessary Process steps(lithography - optical and multi ebeams-, etching, thin film deposition and thermal treatments, wafer bonding, physical characterizations,...).
Before joining CEA-LETI, he was with Thomson Semiconductors(1981-1986), where he developed and transferred to production advanced microelectronics technologies, devices and products (microprocessors, video processors, DSP, DAC and ADC, NVM...).
He gained his PhD in Applied Physics from Paris University(1982) on Photovoltaics. He is Visiting Professor at Tokyo Institute of Technology(Tokyo, Japan) since 2014 , National Chiao Tung University(Hsinchu, Taiwan) since 2015 and at Chinese Academy of Science(Beijing, PRC) since 2016 . He is distinguished CEA Research Director(since 2002), IEEE Distinguished Lecturer(since 2004), Fellow of the IEEE (since 2006), Fellow of the Electrochemical Society (since 2015). He was awarded the titles of Chevalier de l’Ordre National du Mérite(2004) and Chevalier de l’Ordre des Palmes Académiques(2011), the 2005 Grand Prix de l’Académie des Technologies. Member of the ITRS since1998, the European Research Council Panel(2007), the Nanosciences Foundation Board of Trustees( 2007).
He was Associate Editor of IEEE Trans. on Elect. Dev.(2008-2014) and Member of the IEEE Electron Devices Society Board of Governors(01/2009-12/2014) and reelected(2016-2018) ; Chair of IEEE EDS Region 8 SRC (2015-2016) ; Secretary of IEEE Electron Devices Society (2016-2017).
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