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Mansun J. Chan - Fellow
Lecture Topics:
- Nano-device physics and technology
- Device modelling and circuit simulation
- Interconnect Technology
- Non-volatile memory technology
- Bio-sensors and circuits
Biography: Mansun Chan (S’92-M’95-SM’01-F’13) received Ph.D. degrees from the UC, Berkeley in 1995. He is one of the major contributors to the unified BSIM model for SPICE, which has been accepted by most US companies and the Compact Model Council (CMC) as the first industrial standard MOSFET model. In January 1996, he has joined the EEE faculty at Hong Kong University of Science and Technology. After that, he developed a SOI MOSFET model, which has been adopted by UC Berkeley as the core of the BSIMSOI model. Between July 2001 and December 2002, he was a Visiting Professor at University of California at Berkeley and the Co-director of the BSIM program. In this capacity, he has successfully completed the technology transfer of BSIM3SOI to be the first industrial standard SOI MOSFET model. In addition to device modeling, Prof. Chan’s current research interests also include nano-transistor fabrication technology, carbon-based device physics, printable transistors, 3D integrated circuits, bio-sensors and cloud computing based simulation platform. He is current working on an interactive modeling and online simulation (i-MOS) platform to facilitate the interactions between model developers and circuit designers using the Internet technology.
Prof. Chan is a recipient of the UC Regents Fellowship, Golden Keys Scholarship for Academic Excellence, SRC Inventor Recognition Award, Rockwell Research Fellowship, R&D 100 award (for the BSIM3v3 project), Teaching Excellence Appreciation award, Distinguished Teaching Award and the Shenzhen City Technology Innovation Award by the Chinese Government. He is a Fellow and Distinguished Lecturer of IEEE.
John Dallesasse
University of Illinois at Urbana-Champaign
John Dallesasse is a Professor of Electrical and Computer Engineering and Associate Dean in the Grainger College of Engineering at the University of Illinois at Urbana-Champaign, where he’s been for over 10 years. He also has over 20 years of industry experience in technology development and executive management, having led technically diverse and geographically distributed engineering teams. Prior to joining UIUC he was the Chief Technology Officer, Vice President, and co-founder of Skorpios Technologies where he was responsible for developing innovative methods for heterogeneous integration of compound semiconductors with silicon. His technical contributions include, with Nick Holonyak, Jr., the discovery of III‑V Oxidation, which has become an enabling process technology for the fabrication of Vertical-Cavity Surface-Emitting Lasers (VCSELs) for optical networking, 3D imaging, and LIDAR applications. John has over 100 publications and conference presentations, and 50 issued patents. He serves as the Chair of the Steering Committee for the IEEE Journal of Lightwave Technology, the Chair of the Steering Committee for the IEEE Transactions on Semiconductor Manufacturing, and as the Vice President of Technical Committees for IEEE-EDS. He is a Fellow of the IEEE and Optica.
Giovanni Ghione - Editor-in-Chief
Department of Electronics and Telecommunications, Torino, Italy
Giovanni Ghione graduated cum laude in Electronic Engineering from Politecnico di Torino, Torino Italy in 1981. He was Assistant Professor in Electromagnetic Fields since 1983, Associate Professor in Circuit Theory with Politecnico di Milano, Milano Italy since 1987, and finally Full Professor in Electronics since 1990, first with University of Catania, then again with Politecnico di Torino. His research activity has been mainly concerned with high-frequency electronics and optoelectronics. He has contributed to the physics-based modelling of compound semiconductor devices, with particular interest in the numerical noise modeling in the small- and large-signal regimes, in the thermal modeling of devices and integrated circuits, and in the modeling of widegap semiconductors devices and materials. He has also done research in the field of microwave electronics, with contributions in the modeling of passive elements, in particular coplanar components, and in the design of power MMICs. Prof. Ghione was actively engaged since 1985 in research on optoelectronic devices, with application to the modeling and design of near and far-IR photodetectors, electrooptic and electroabsorption modulators, and GAN-based LEDs. Prof. Ghione has authored or co-authored more than 300 research papers on the above subjects and five books. He is an IEEE Fellow (class 2007). He has been a member of the QPC subcommitee of IEDM in 1997-1998 and in 2006-2007 and Chair in 2008; in 2009-2010 he was the EU Arrangement Co-Chair of IEDM. From 2010 to 2015 he has been chair of the EDS Committee on Compound Semiconductor Devices and Circuits. He has been Chair of the GAAS2003 conference and he has been subcommittee chair in several SCs of the European Microwave Week. He was President of the Library System of Politecnico from 1997 to 2007. From 2007 to 2015 he was the Head of the Department of Electronics and Telecommunications of Politecnico di Torino.
Meikei Ieong - Fellow
Chief Technology Officer
Biography: Meikei Ieong (SM’01) received the B.S. degree in electrical engineering from the National Taiwan University, Taipei, Taiwan, in 1991 and the M.S. and Ph.D. degrees in electrical and computer engineering from the University of Massachusetts, Amherst, in 1993 and 1996, respectively. He also received an MBA degree from the Sloan Fellows Program of Massachusetts Institute of Technology in 2013.
Meikei is currently Vice-President of TSMC Europe. He was program director of TSMC’s 28nm High-Performance and Mobile Technologies. Prior to that he held various engineering and management positions at IBM including senior manager at IBM TJ. Watson Research Center, Yorktown, NY. He’s recipient of IBM Technical Achievement and Corporate awards and was elected as a Master Inventor at IBM Research.
He held an adjunct associate professor position with the Department of Electrical Engineering from the Columbia University, NY in 2001. He was General Chairman of the IEEE International Electron Devices Meeting (IEDM). He has served as an editor for the IEEE Transaction on Electron Devices since 2010 and as chair of the IEEE EDS Education Award committee since 2013. He has Published more than one hundred papers in referred journals and conference proceedings and more than eighty patents. He also speaks frequently at international conferences and seminars.
Shuji Ikeda
NIRC
Shuji Ikeda (M’91-SM’02-F’04) received the B.S. degree in Physics, PhD. in Electrical Engineering from Tokyo Institute of Technology, Tokyo, Japan in 1978 and 2003 respectively and the M.S. degree in Electrical Engineering from Princeton University, Princeton, New Jersey, USA in 1987. He joined Semiconductor and Integrated Circuit Group, Hitachi ltd., Tokyo, Japan in 1978, where he was engaged in research and development of state of the art SRAM process and devices. He was also working on developing process technology for LOGIC, embedded memories, and CMOS power RF devices and on transferring technology to mass production line. He invented some of the outstanding structures for SRAM. He pioneered process to implement new materials in mass production, including W-polycide, Al-Cu-Si in 1984 and in-situ phosphorus-doped-polysilicon in 1990. He is the first to realize Lightly Doped Drain (LDD) in production to suppress Hot Carrier Injection in 1984. He also firstly implemented polyimide coat of the chip to immune SER caused by alpha particle from the resin covers the chip. In October 2000, he joined Trecenti Technologies Inc. He developed new process scheme with aggressive reduction of process time and suitable for single-wafer processing. That achieved less than 0.25days/layer cycle time. In April 2005, he joined ATDF at Austin Texas, as a Director of Technology. Where he develops various kinds of technologies includes scaled CMOS, non-classical CMOS, new materials and tools. He established tei Technology LLC in May 2008, Omni Water Solutions LLC, in 2009 at Austin Texas. He started tei Solutions Inc in Tsukuba, Ibaraki, Japan in 2010, where, he manages R&D foundry developing new devices, process technologies for VLSIs. He also integrates emerging technology onto semiconductor manufacturing technology to create innovative products/businesses. Due to his contributions to 200 MHz RISC microprocessor, he got 1999 R&D 100 Award. He served as subcommittee and executive committee member of IEDM from 1993 to 2002. He introduced Manufacturing Session in 1998 and chaired IEDM in 2002. He was a member of EDS Administrative Committee from 2005 to 2010. He was a technical program member for VLSI Technology Symposium in 2007 and 2008. He serves as a chairman of VLSI committee of EDS from 2009 and AdHoc Committee on Asia EDS Conference from 2014.
Benjamin Iniguez - Senior Member
Benjamin Iñiguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA)of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs. His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.
Lecture Topics
Compact device modeling
Semiconductor device parameter extraction
Physics of Thin-Film Transistors
Graphene and TMD devices
Arokia Nathan - Fellow
Arokia Nathan is currently a Bye-Fellow and Tutor at Darwin College, University of Cambridge, UK. He received his PhD degree in electrical engineering from the University of Alberta, Canada, in 1988. He joined LSI Logic USA, and subsequently, the Institute of Quantum Electronics, ETH Zürich, Switzerland, before joining the Electrical and Computer Engineering Department at the University of Waterloo, Canada. In 2006, he joined the London Centre for Nanotechnology, University College London, UK, as the Sumitomo Chair of Nanotechnology. He moved to Cambridge University in 2011 as the Chair of Photonic Systems and Displays. He has more than 600 publications, including six books, and more that 110 patents and four spin-off companies. He is the co-founder of Cambridge Touch Technologies, UK and VISBAN Networks UK where he is a Director and Chief Technical Officer. He is a Fellow of IEEE and SID, a Distinguished Lecturer of the IEEE Electron Devices Society and Sensor Council, a Chartered Engineer (UK), Fellow of the Institution of Engineering and Technology (UK), and winner of the 2020 IEEE EDS JJ Ebers Award.
Lecture Topics
- Flexible Electronics
- Oxide Semiconductor Electronics
- Ultralow Power Transistors and Sensor Interfaces
- Active Matrix OLED Displays
- TFT Compact Modeling and Parameter Extraction
- Nanoscale Large Area Electronics
Bill Nehrer
Ravi M. Todi
Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
Lecuture Topic
- MOS Devices and Technology
Chen Yang - Sensors and Actuators
Wilmington, MA
Chen Yang received his B. S. degree and Ph.D. degree in Electronic Science and Technology from Tsinghua University, Beijing, China, in 2003 and 2008, respectively. He was a Postdoctoral Researcher at University of California at Berkeley from 2009 to 2010. Then he joined Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, as an Associate Professor. From 2013 to 2016, he worked as an Assistant Project Scientist at the Berkeley Sensors and Actuators Center (BSAC), University of California at Berkeley. Since 2016, he is with Analog Devices, Inc. in advanced MEMS development team. His research interests include MEMS physical and biological sensors, energy storage devices, RF passive devices and nano-materials. Dr. Yang was the recipients of the IEEE Electron Devices Society (EDS) Early Career Award in 2010, and the IEEE ElectronDevices Society Ph.D. Student Fellowship Award in 2007. He has been serving as TPC member of IEEE RFIC Symposium since 2012. He served as the vice chair of IEEE EDS Regions 4-6 SRC and member of the EDS Membership Committee. He was the tutorial chair of 2009 Silver Jubilee Conference on Communication Technologies and VLSI Design (CommV) at Vellore, Tamil Nadu, India, the secretary of the 3rd Japan-China-Korea Joint Conference on MEMS/NEMS (JCK MEMS/NEMS 2012) at Shanghai, China, and the secretary of 2007 International Workshop on Electron Devices and Semiconductor Technology (IEDST 2007) at Beijing, China. He was the founding Chair of IEEE Electron Devices Society Tsinghua University Student Branch Chapter at Beijing, China.
Bin Zhao - Fellow
Lecture Topics:
- Analog/Mixed-Signal/RF IC and Enabling Technologies
- High Performance VLSI Interconnect
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