Humanitarian Committee Chair
Humanitarian Committee Member
Cor L. Claeys - Fellow
Cor Claeys is Professor at the KU Leuven (Belgium) since 1990. He was with imec, Leuven, Belgium from 1984 till 2016. His main interests are semiconductor technology, device physics, low frequency noise phenomena, radiation effects and defect engineering. He co-edited books on “Low Temperature Electronics” and “Germanium-Based Technologies: From Materials to Devices” and wrote monographs on “Radiation Effects in Advanced Semiconductor Materials and Devices”, “Fundamental and Technological Aspects of Extended Defects in Germanium” and “Random Telegraph Signals in Semiconductor Devices” and “Metals in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control and Electrical Impact”. He (co)authored 14 book chapters, over 1100 conference presentations and more than 1300 technical papers. He is editor/co-editor of 60 Conference Proceedings. Prof. Claeys is a Fellow of the Electrochemical Society and of IEEE. He was Founder of the IEEE Electron Devices Benelux Chapter, Chair of the IEEE Benelux Section, elected Board of Governors Member and EDS Vice President for Chapters and Regions. He was EDS President in 2008-2009 and Division Director on the IEEE Board of Directors in 2012-2013. He is a recipient of the IEEE Third Millennium Medal and received the IEEE EDS Distinguished Service Award. Within the Electrochemical Society, he was Chair of the Electronics & Photonics Division (2001-2003) . In 2004, he received the Electronics & Photonics Division Award.
* Low Frequency Noise in state of the art and emerging semiconductor technologies
* Radiation Hardness of State-of-the-art Si and Ge-Based CMOS Technologies
* Are Extended Defects a Show Stopper for Future III-V CMOS Technologies?
* Trends and Challenges in Micro- and Nanoelectronics for the Next Decade
Samar K. Saha - Life Fellow
Samar Saha has served as the 2016-2017 President of the IEEE Electron Devices Society (EDS) and currently serving as the Senior Past President and Chairs of the J.J. Ebers Award and Fellow Evaluations Committees. He is the Chief Research Scientist at Prospicient Devices, California, USA and an Adjunct faculty in the Electrical Engineering (EE) department, Santa Clara University, USA. In the past, he has worked in various technical and management positions for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta. In academia, he has worked as a faculty member in the EE departments at Southern Illinois University, Carbondale; Auburn University; the University of Nevada, Las Vegas; and the University of Colorado, Colorado Springs.
Dr. Saha has authored over 100 research papers; two books, entitled, FinFET Devices for VLSI Circuits and Systems (2020) and Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond (2015); one book chapter on Technology Computer-Aided Design (TCAD); and holds 12 US patents. His research interests include exploratory device and process architectures, compact modeling, renewable energy, and R & D management. He is an IEEE Life Fellow and a Fellow of the Institution of Engineering and Technology, UK.
Lecture Topics: (1) Advanced Field-Effect Transistor Device Technologies for Ultra-low Power VLSI Circuits and Systems at Nanometer Nodes; (2) Physics of Integrated Circuit Device Models for VLSI Circuit Design; (3) Thin Film Transistors for Ubiquitous Flexible Electronics; (4) Evolution of Semiconductor Devices Enabling Smart Environments and Integrated Ecosystems.
Ravi M. Todi
Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
- MOS Devices and Technology
Albert Z.H. Wang - Fellow - IEEE
Albert Wang is a Professor of Electrical and Computer Engineering at the University of California, Riverside, California, USA. He currently serves as a Program Director of National Science Foundation, USA. His research interests cover semiconductor devices, AMS/RF ICs, integrated design-for-reliability, 3D heterogeneous devices and integration, emerging nano devices and circuits. He authored 1 book and more than 280 papers, and holds 16 US patents. He was President for IEEE Electron Devices Society (2014-2015). His editorial services include IEEE Electron Device Letters, IEEE Transactions on Circuits and Systems I, IEEE Transactions on Circuits and Systems II, IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and IET Journal of Engineering. He has been an IEEE Distinguished Lecturer for IEEE Electron Devices Society, IEEE Solid-State Circuits Society and IEEE Circuits and Systems Society. He served on ITRS committee, IEEE 5G Initiative committee and IEEE Fellow Committee. He was General Chair (2016) for IEEE RFIC Symposium and is General Chair (2021) for IEEE EDTM conference. He is Fellow of National Academy of Inventors, Fellow of IEEE Fellow and Fellow of AAAS.
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