Dr. Yuanyuan Shi received her Ph.D. in Nanoscience (Nanoelectronics) with Excellent “Cum Laude” honor and Extraordinary PhD prize from University of Barcelona in 2018, and in Nanoscience, Materials and Chemical Engineering from Rovira i Virgili University. During her PhD, she was a visiting scholar at Stanford University for one year (2016-2017). Her PhD research work mainly focused on emerging non-volatile memory devices, and also 2D materials based nanoelectronics to bring new opportunities for the Post-Moore Era.
Currently, Dr. Shi is a Postdoctoral fellow (Funded by Marie Curie Fellowship from European Commission) at IMEC, Belgium. Her research focuses on novel materials and new concepts/architectures based nanoelectronics (mainly transistors and memory devices), which targets to bring breakthroughs for beyond CMOS technology. Dr. Shi has published more than 50 research articles (including Nature Electronics, IEDM, Nano Letters, Advanced Functional Materials etc.), two book chapters and granted for two international patents, one of which has received 1 M$ investment to create a start-up and introducing this product in the market. Dr. Shi is a member of IEEE, EDS and RSC. She also serves as an active committee member in several top conferences in the field of electronic devices (such as IRPS and IPFA) and also in IEEE EDS Nanotechnology Committee.
Dr. Shi is a recipient of Marie Skłodowska-Curie Individual Fellowship (European Commission), IEEE EDS PhD student fellowship (three winners globally each year) and 2018 Chinese Government Award for Outstanding Self-Financed Students Abroad (two winners among the candidates from all the universities in Spain). She has been recognized as a Forbes 30 under 30 (one of the world’s most impactful community of young entrepreneurs and game-changers) in 2020 and also as one of the Rising Stars Women in Engineering in 2018.
