Technology Computer Aided Design

Jinfeng Kang received his B.S. degree in physics from Dalian University of Technology in 1984, and M.S. and Ph.D degrees in solid-state electronics & microelectronics from Peking University in 1992 and 1995 respectively. From 1996 to 1997 he worked on the new oxides applications in microelectronics at Institute of Microelectronics in Peking University as a post-doctoral fellow. In 1997 he joined the faculty first as an associate professor then professor in 2001. From 2002 to 2003, he was invited to work on high-k/metal gate technology at SNDL in National University of Singapore as a visiting professor. He is now a Full Professor of Electronics Engineering Computer Science School in Peking University. His research interest is to explore novel device concepts, structures, materials, circuits, and the system architectures for the applications of future computing and data storage systems. He has published over 200 conference and journal papers, and was speaker of more than 30 invited talks such as IEDM, ASP-DAC, MRS.

Victor Moroz received M.S. degree in Electrical Engineering from Novosibirsk Technical University and Ph.D. degree in Applied Physics from the University of Nizhny Novgorod. After engaging in technology development at several semiconductor manufacturing companies and teaching at the University of Nizhny Novgorod, Dr. Moroz joined Technology Modeling Associates in 1995, which later became a part of Synopsys. Currently Dr. Moroz is a Synopsys Fellow, engaged in a variety of projects on modeling FinFETs, gate-all-around nano-wires, stress engineering, 3D ICs, transistor scaling, Middle-Of-Line and Back-End-Of-Line RC, solar cell design, innovative patterning, random and systematic variability, junction leakage, non-Si transistors, and atomistic effects in layer growth and doping. Several facets of this activity are reflected in three book chapters and over 100 technical papers, invited presentations, and patents. He has been involved in technical committees at ITRS, IEDM, SISPAD, DFM&Y, ECS, IRPS, and ESSDERC.

Nuo Xu received the B.Sc. degree in Microelectronics from Peking University, China in 2008, M.S. and Ph.D. degrees both in Electrical Engineering from the University of California, Berkeley in 2010, and 2012, separately. His Ph.D. thesis was about Strain-Si Thin-body Transistor Technologies. He has been with Synopsys in 2010 and imec in 2011 for temporary positions. He became a post-doctoral scholar and lecturer in EE of UC Berkeley in 2012, researching on 3D integration of emerging logic and memory devices and design-technology co-optimization (DTCO). He joined Samsung America Headquarters, Device Solutions (AHQ-DS) in 2014, as a senior staff research scientist, working on emerging non-volatile memories (NVM), DTCO and EDA/CAD algorithm development. He joined TSMC North America in 2019, as a R&D manager, focusing on developing leading-edge NVM technologies, compact modeling and EDA/CAD methodologies. He has published over 100 technical papers on peer-reviewed journals and conferences (including 12 IEDM/VLSI papers as the first author); and applied/been granted for over 10 US patents. He is a member of the IEEE Electron Devices Society (EDS) Technical Committee on Technology CAD, and served as the sub-committee chair (2020) and members (2018-19) of IEEE IEDM Modeling and Simulation sessions. He was a recipient of IEEE EDS Student Fellowship (2010), TSMC Academia Award for Outstanding Student (2012), and Samsung AHQ-DS President Award (2019).