Early Career Award Committee

  • Early Career Award Committee Chair

    • Meyya Meyyappan
       - Fellow
      NASA Ames Research Center
      Center for Nanotechnology
      Mailstop 229-3
      Moffett Field, CA 94035
      USA
      Phone 1:
      +1 650 604 2616

      Fax:
      +1 650 604 5244
      Lecture Topics: 1. An overview of recent developments in Nanotechnology

      2. Nanotechnology in nanoelectroncis, optoelectronics and sensor development

      3. Carbon based electronics

      4. Nanotechnology: development of practical systems and nano-micro-macro integration.
  • Early Career Award Committee Members

    • Ru Huang
       - MOS Devices and Technology
      Peking University
      Institute of Microelectronics
      Beijing 100871
      China
      Phone 1:
      86 10 6275 7761

      Fax:
      86 10 6275 1789 -7761
      Ru Huang (M’98–SM’06) received the B.S. (highest honors) and M.S. degrees in electronic engineering from Southeast University, Nanjing, China, in 1991 and 1994, respectively, and the Ph.D. degree in microelectronics from Peking University, Beijing, China, in 1997.
      In 1997, she joined the faculty of Peking University, where she is currently a Professor and the Head of the Department of Microelectronics. Since 2000, she has been the leader of several State Key Research Projects of China in device research and IC fabrication technology research, including major state basic research projects, 863 national projects, the key project from National Natural Science Foundation, as well as several collaborative projects with Samsung, Intel and Fujitsu Corporations. Her research interests include nano-scaled CMOS devices, nonvolatile memory devices and new devices for RF and harsh environment applications. She holds 21 granted patents, and has authored/co-authored 4 books and over 180 papers, including many conference invited papers. Dr. Huang is the winner of the National Science Fund for Distinguished Young Scholars and many other awards in China, including the National Youth Science Award, Science and Technology Progress Award from Ministry of Information Industry and Ministry of Education. She serves as a member of IEEE Electron Devices Society (EDS) AdCom and the associate chief editor of Science in China. She was the Technical Program Co-Chair of the 7th and 9th International Conference on Solid State and Integrated Circuit Technology (ICSICT 2004 and 2008), a Far East Committee Member of the 2004 International Solid State Circuits Conference (ISSCC), and committee members of many other international conferences and symposiums.
    • Subramanian Iyer
       - Fellow
      Distinguished Chancellors Professor and IBM Fellow
      Electrical Engineering Department
      UCLA
      CA 90024
      USA
      Work:
      310 825 6913

      Cell:
      914 329 3341

      Lecture Topics: Orthogonal Scaling, embededed Memory, system scaling, 3D integration, semiconductors
    • Hisayo S. Momose
       - Fellow
      Yokohama National University
      79-5 Tokiwadai, Hodogaya-ku
      Yokohama 240-8501
      Japan
      Phone 1:
      +81 45 339 3213

      Fax:
      +81 45 339 4456
    • M.K. Radhakrishnan
       - Senior Member
      NanoRel Technical Consultants
      273, 18D Main, 6th Block
      Koramangla, Bangalore 560095
      India
      Phone 1:
      +91 80 25630695

      Phone 2
      +91 9447663869

      Lecture Topics: 1. Physical Analysis Challenges and Interface Physics Studies in Silicon Nano Devices 2.  Building in Reliability in Devices through Analysis and Study of Failure Mechanisms.


      Biography:  M.K. Radhakrishnan (M’82-SM’94) received B.Sc from Kerala University, India in 1972, M.Sc in Solid State electronics from Sardar Patel University, India in 1975 and Ph.Ddegree in Semiconductor Physics from Cochin University of Science and Technology in 1981.


      He is currently Directorof NanoRel Technical Consultants Singapore from 2004.  He has been with Indian Space Research Organization till 1990. From 1991-1993 he was with ST Microelectronics Singapore. From 1993 to 2001 he was with Institute of Microelectronics Singapore, where he pioneered the setting up of a full-fledged device failure analysis laboratory.  From 1994 to 2004 he served as adjunct professor at National University of Singapore. His current research interests include analysis and reliability in nano-electronic devices and interface physics studies.


      Dr. Radhakrishnan is a fellow of Institution of Electrical and Telecommunication Engineers India, member of Electron Device Failure Analysis Society (EDFAS) USA and ESD Association USA.  He served as Editor of Journal of Semiconductor Technology and Science (Korea) during 2001-2003 and is an Editorial board member of Microelectronics Reliability journal (UK). He served as Guest Editor to IEEE Transactions Devices Materials and Reliability and edited or co-edited of 4 conference proceedings.  He was Technical Chair IEEE International Symposium on Physical and Failure Analysis of ICs (IPFA) in 1995 and 1997 and General Chair of IPFA in 1999.  He was IEEEIEDST General Chair in 2009. He has been in the technical program committees of ESREF, IRPS, EPTC, MIEL, ICEE and EOS/ESD Symposium.  Currently he is the Editor-in Chief of IEEE EDS Newsletter and serves as a member of IEEE EDS Technical Committee on Electronic Materials.  He is a Distinguished Lecturer of IEEE Electron Devices Society.


       

    • Samar K. Saha
       - Senior Member
      Prospicient Devices
      Milpitas, CA 95035
      USA
      Phone 1:
      +1 408 966 5805

      Phone 2
      408-966-5805

      Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

    • Jacobus W. Swart
       - Senior Member
      FEEC/UNICAMP - State University of Campinas
      Av. Albert Einstein 400
      Campinas, Sao Paul 13.083-970
      Brazil
      Phone 1:
      +55 19 3746 6001

      Lecture Topics: MEMS, sensors, ISFET, CNT and graphene, Advanced CMOS processes
    • Ravi M. Todi
       - MOS Devices and Technology
      Fellow
      Director and Senior Technologist Foundry Technology Development
      Foundry Technology Development
      951 SanDisk Drive
      Milpitas, CA 95035
      USA
      Phone 1:
      O: 408-801-8118

      Phone 2
      C: 858-947-8513

      Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.