Planar Nanowire-based Transistors and Vertical Nanowire-based Solar Cells: Performance and Manufacturability Abstract

This talk will focus on two semiconductor nanowire nanotechnologies developed at Illinois. First, I will introduce a method to realize scalable 3D III-V transistors using MOCVD grown planar nanowire arrays. Planar nanowires represent a new nanowire paradigm that is self-aligned, transfer-printable, and compatible with planar processing technologies. Monolithically grown HEMTs using GaAs planar nanowire array as the channel material, will be shown with record f_T/f_max. I will then discuss heterogeneous integration of vertical III-V nanowires on silicon and graphene by direct epitaxy for solar cell applications.