The EDS Executive Committee (ExCom) is an 11 member body comprised of the society's officers (seated Presidents, Treasurer, Secretary), Standing Committee Vice Presidents, and the EDS Executive Director.  The Executive Committee provides the Board of Governors with strategic vision and long-term planning for the Society, oversees the finances and operations of the Society, and proposes new initiatives as well as policy changes.  The current ExCom members are listed below.

President: President-Elect assumes the position of President for a two-year term, (maximum one term) after serving as President-Elect for two years. The President has BoG voting privileges.
President Elect: Elected for a two-year term, maximum one term. The President-Elect has BoG voting privileges.
Secretary: Elected for a two-year term, no maximum terms. The Secretary has BoG voting privileges.
Treasurer: Elected for a two-year term, no maximum terms. The Treasurer has BoG voting privileges
Jr. & Sr. Past Presidents: have two-year terms and BoG voting privileges. 
Vice Presidents: have two-year renewable terms and Forum voting privileges.

  • President

  • President Elect

    • Meyya Meyyappan
       - Fellow
      Meyya  Meyyappan  portrait
      NASA Ames Research Center
      Center for Nanotechnology
      Mailstop 229-3
      Moffett Field, CA 94035
      Phone 1:
      +1 650 604 2616

      +1 650 604 5244
      Lecture Topics: 1. An overview of recent developments in Nanotechnology

      2. Nanotechnology in nanoelectroncis, optoelectronics and sensor development

      3. Carbon based electronics

      4. Nanotechnology: development of practical systems and nano-micro-macro integration.
  • Jr. Past President

    • Samar K. Saha
       - Senior Member
      Samar K. Saha portrait
      Prospicient Devices
      Milpitas, CA 95035
      Phone 1:
      +1 408 966 5805

      Phone 2

      Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

  • Sr. Past President

    • Albert Z.H. Wang
       - Fellow - IEEE
      Albert Z.H. Wang portrait
      University of California
      Dept. of Electrical and Computer Engineering
      417 Winston Chung Hall
      Riverside, CA 92521
      Phone 1:
      +1 951 827 2555

      +1 951 827 2425
      Albert Wang received the BSEE degree from Tsinghua University, China, and the PhD EE degree from State University of New York at Buffalo, USA, in 1985 and 1996, respectively. From 1995 to 1998, he was with National Semiconductor Corporation, USA. From 1998 to 2007, He was an Assistant and Associate Professor in the Department of Electrical and Computer Engineering at the Illinois Institute of Technology, Chicago, USA. Since 2007, He has been a Professor of Electrical and Computer Engineering at the University of California, Riverside, USA, where he is Director for the Laboratory for Integrated Circuits and Systems and Director for the University of California system-wide Center for Ubiquitous Communications by Light. His research covers Analog/Mixed-Signal/RF ICs, Integrated Design-for-Reliability, 3D Heterogeneous Integration, IC CAD and Modelling, Biomedical Electronics, Emerging Nano Devices and Circuits, and LED-based Visible Light Communications. Wang received the CAREER Award from the National Science Foundation, USA. He published one book and more than 250 papers, and holds 13 US patents. Wang was editor and guest editor for IEEE Electron Device Letters, IEEE Transactions on Circuits and Systems I, IEEE Transactions on Circuits and Systems II, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices. He has been an IEEE Distinguished Lecturer for IEEE Electron Devices Society, IEEE Solid-State Circuits Society and IEEE Circuits and Systems Society. He is Sr. Past President (2018-2019), and was Jr. Past President (2016-2017) and President (2014-2015) of IEEE Electron Devices Society. He was Chair of the IEEE CAS Analog Signal Processing Technical Committee (ASPTC) and committee member for the SIA International Technology Roadmap for Semiconductor (ITRS). He is IEEE 5G Initiative member. He is a member of IEEE Fellow Committee. He was General Chair (2016) and TPC Chair (2015) for IEEE RFIC Symposium. He served as committee member for many IEEE conferences, including IEDM, EDTM, BCTM, ASICON, IEDST, ICSICT, CICC, RFIC, APC-CAS, ASP-DAC, ISCAS, IPFA, ICEMAC, NewCAS, ISTC, IRPS, AP-RASC, MAPE, EDSSC, MIEL, etc. Wang is an IEEE Fellow and AAAS Fellow.
  • Secretary

    • Jacobus W. Swart
       - Senior Member
      Jacobus W.  Swart portrait placeholder
      FEEC/UNICAMP - State University of Campinas
      Av. Albert Einstein 400
      Campinas, Sao Paul 13.083-970
      Phone 1:
      +55 19 3746 6001

      Lecture Topics: MEMS, sensors, ISFET, CNT and graphene, Advanced CMOS processes
  • Treasurer

    • Subramanian Iyer
       - Fellow
      Subramanian Iyer portrait placeholder
      Distinguished Chancellors Professor and IBM Fellow
      Electrical Engineering Department
      CA 90024
      310 825 6913

      914 329 3341

      Lecture Topics: Orthogonal Scaling, embededed Memory, system scaling, 3D integration, semiconductors
  • Vice President of Regions and Chapters

    • M.K. Radhakrishnan
       - Senior Member
      M.K.  Radhakrishnan portrait
      NanoRel Technical Consultants
      273, 18D Main, 6th Block
      Koramangla, Bangalore 560095
      Phone 1:
      +91 80 25630695

      Phone 2
      +91 9447663869

      Lecture Topics: 1. Physical Analysis Challenges and Interface Physics Studies in Silicon Nano Devices 2.  Building in Reliability in Devices through Analysis and Study of Failure Mechanisms.

      Biography:  M.K. Radhakrishnan (M’82-SM’94) received B.Sc from Kerala University, India in 1972, M.Sc in Solid State electronics from Sardar Patel University, India in 1975 and Ph.Ddegree in Semiconductor Physics from Cochin University of Science and Technology in 1981.

      He is currently Directorof NanoRel Technical Consultants Singapore from 2004.  He has been with Indian Space Research Organization till 1990. From 1991-1993 he was with ST Microelectronics Singapore. From 1993 to 2001 he was with Institute of Microelectronics Singapore, where he pioneered the setting up of a full-fledged device failure analysis laboratory.  From 1994 to 2004 he served as adjunct professor at National University of Singapore. His current research interests include analysis and reliability in nano-electronic devices and interface physics studies.

      Dr. Radhakrishnan is a fellow of Institution of Electrical and Telecommunication Engineers India, member of Electron Device Failure Analysis Society (EDFAS) USA and ESD Association USA.  He served as Editor of Journal of Semiconductor Technology and Science (Korea) during 2001-2003 and is an Editorial board member of Microelectronics Reliability journal (UK). He served as Guest Editor to IEEE Transactions Devices Materials and Reliability and edited or co-edited of 4 conference proceedings.  He was Technical Chair IEEE International Symposium on Physical and Failure Analysis of ICs (IPFA) in 1995 and 1997 and General Chair of IPFA in 1999.  He was IEEEIEDST General Chair in 2009. He has been in the technical program committees of ESREF, IRPS, EPTC, MIEL, ICEE and EOS/ESD Symposium.  Currently he is the Editor-in Chief of IEEE EDS Newsletter and serves as a member of IEEE EDS Technical Committee on Electronic Materials.  He is a Distinguished Lecturer of IEEE Electron Devices Society.


  • Vice President of Technical Committees and Meetings

    • Ravi M. Todi
       - MOS Devices and Technology
      Ravi M.  Todi portrait
      Director, Product Management
      2600 Great America Way
      Santa Clara, CA 95054
      Phone 1:

      Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
  • Vice President of Membership

    • Ru Huang
       - MOS Devices and Technology
      Ru Huang portrait
      Peking University
      Institute of Microelectronics
      Beijing 100871
      Phone 1:
      86 10 6275 7761

      86 10 6275 1789 -7761
      Ru Huang (M’98–SM’06) received the B.S. (highest honors) and M.S. degrees in electronic engineering from Southeast University, Nanjing, China, in 1991 and 1994, respectively, and the Ph.D. degree in microelectronics from Peking University, Beijing, China, in 1997.
      In 1997, she joined the faculty of Peking University, where she is currently a Professor and the Head of the Department of Microelectronics. Since 2000, she has been the leader of several State Key Research Projects of China in device research and IC fabrication technology research, including major state basic research projects, 863 national projects, the key project from National Natural Science Foundation, as well as several collaborative projects with Samsung, Intel and Fujitsu Corporations. Her research interests include nano-scaled CMOS devices, nonvolatile memory devices and new devices for RF and harsh environment applications. She holds 21 granted patents, and has authored/co-authored 4 books and over 180 papers, including many conference invited papers. Dr. Huang is the winner of the National Science Fund for Distinguished Young Scholars and many other awards in China, including the National Youth Science Award, Science and Technology Progress Award from Ministry of Information Industry and Ministry of Education. She serves as a member of IEEE Electron Devices Society (EDS) AdCom and the associate chief editor of Science in China. She was the Technical Program Co-Chair of the 7th and 9th International Conference on Solid State and Integrated Circuit Technology (ICSICT 2004 and 2008), a Far East Committee Member of the 2004 International Solid State Circuits Conference (ISSCC), and committee members of many other international conferences and symposiums.
  • Vice President of Publications

    • Tsu-Jae King Liu
       - Editor-in-Chief
      Tsu-Jae King Liu portrait
      University of California at Berkeley
      253 Cory Hall #1770
      Berkeley, CA 94720-1770
      Phone 1:
      +1 510 642 2689

      +1 510 642 2739
      Tsu-Jae King Liu received the B.S., M.S., and Ph.D. degrees in Electrical Engineering from Stanford University. From 1992 to 1996 she was a Member of Research Staff at the Xerox Palo Alto Research Center (Palo Alto, CA). In August 1996 she joined the faculty of the University of California, Berkeley, where she is currently the TSMC Distinguished Professor in Microelectronics, and Chair of the Department of Electrical Engineering and Computer Sciences.
      Dr. Liu's research awards include the DARPA Significant Technical Achievement Award (2000) for development of the FinFET, the IEEE Kiyo Tomiyasu Award (2010) for contributions to nanoscale MOS transistors, memory devices, and MEMs devices, the Intel Outstanding Researcher in Nanotechnology Award (2012), and the Semiconductor Industry Association Outstanding Research Award (2014). She has authored or co-authored close to 500 publications and holds over 90 U.S. patents, and is a Fellow of the IEEE. Her research activities are presently in advanced materials, process technology and devices for energy-efficient electronics.