IEEE Committee Representatives

EDS representatives on IEEE committees serve two-year renewable terms with no voting privileges.

  • IEEE Conferences Committee

    • Ravi M. Todi
       - MOS Devices and Technology
      Ravi M.  Todi portrait
      Fellow
      Director, Product Management
      GlobalFoundries
      2600 Great America Way
      Santa Clara, CA 95054
      USA
      Phone 1:
      408-462-4926

      Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.
  • IEEE Council on Electronic Design Automation (CEDA)

  • IEEE Council on Superconductivity

    • Quanxi Jia
      Quanxi Jia portrait placeholder
      Prof. Quanxi Jia is a world-renowned scholar in materials science. He is the Empire Innovation Professor and National Grid Professor of Materials Research in the Department of Materials Design and Innovation (MDI) at the State University of New York at Buffalo. He also serves as scientific director of UB’s New York State Center of Excellence in Materials Informatics (CMI). He is IEEE Fellow elected from IEEE EDS. He has authored or co-authored more than 470 peer-reviewed journal articles, delivered more than 100 invited lectures, and holds 48 U.S. patents. He serves as the co-editor-in-chief of Materials Research Letters, and sits on the editorial board of several academic and professional journals.
      Before joining SUNY Buffalo (UB) as a Professor in 2016, he spent more 20 years at the Los Alamos National Laboratory and served as a Division Director there. He is an elected Fellow of the Los Alamos National Laboratory, Materials Research Society, American Physical Society, American Ceramic Society and American Association for the Advancement of Science. He is an ideal liaison between Electron Devices Society and the Materials community.
  • IEEE Young Professionals Committee

  • IEEE Nanotechnology Council

  • IEEE Press Coordinator

    • Samar K. Saha
       - Senior Member
      Samar K. Saha portrait
      Prospicient Devices
      Milpitas, CA 95035
      USA
      Phone 1:
      +1 408 966 5805

      Phone 2
      408-966-5805

      Lecture Topics: (1) Compact Variability Modeling; (2) Scaling Flash Memory Cell to Nanometer Regime; (3) High-performance and Ultra-low Power CMOS Device and Technology

  • IEEE Sensors Council

    • Mina Rais-Zadeh
      Mina Rais-Zadeh  portrait
      Associate Professor
      University of Michigan
      1301 Beal Ave
      Ann Arbor, MI 48109
      USA

      Research Areas: Electron devices for wireless communication and sensing applications and the related device physics, Resonant Sensors: e.g. uncooled infrared detectors, Gallium nitride MEMS and microsystems


      Professional Memberships: IEEE EDS


      Biography: Mina Rais-Zadeh received the B.S. degree in electrical engineering from Sharif University of Technology and M.S. and Ph.D. degrees both in Electrical and Computer Engineering from Georgia Institute of Technology in 2005 and 2008, respectively. From August 2008 to 2009, she was a Postdoctoral Research Fellow at Georgia Institute of Technology. Since January 2009, she has been with the University of Michigan, Ann Arbor, where she is currently an Associate Professor in the Department of Electrical Engineering and Computer Science.


      Dr. Rais-Zadeh is the recipient of the NSF CAREER Award (2011), IEEE Electron Device Society Early Career Award (2011), NASA Early Career Faculty Award (2012), the Crosby Research Award from the University of Michigan (2013), National Academy of Engineering Frontiers of Engineering (2013), and ONR Young Investigator Award (2014). Together with her students, she received the best poster award at the Transducers conference (2013), the best paper award at the IEEE SiRF conference (2014), honorable mention at the IEEE IMS (2014), and was the finalist in student paper competitions at the SiRF (2007) and IMS (2011) conferences. She was the chairperson of the Display, Sensors and MEMS (DSM) sub-committee at the 2013 IEEE International Electron Devices Meeting (IEDM) and is a member of the 2014 IEDM Executive Committee and 2015 IEEE MEMS Executive Committee. She is a senior member of IEEE and has served as a member of the technical program committee of IEEE IEDM (2011-2013), IEEE Sensors Conference (2011-2014), the Hilton Head workshop (2012, 2014), the IEEE MEMS Conference (2014-2015), Transducers (2015), and IFCS (2015). She is an associate editor of the IEEE Electron Device Letters. Her research interests include electron devices for wireless communication and sensing applications and the related device physics, resonant micromechanical devices, RF MEMS, gallium nitride MEMS, and micro/nano fabrication process development.

  • IEEE Women in Engineering Committee (WIEC)

  • Conferences Publications Committee

    • Ravi M. Todi
       - MOS Devices and Technology
      Ravi M.  Todi portrait
      Fellow
      Director, Product Management
      GlobalFoundries
      2600 Great America Way
      Santa Clara, CA 95054
      USA
      Phone 1:
      408-462-4926

      Ravi Todi received his M.S. degree in Electrical and Mechanical Engineering from University of Central Florida in 2004 and 2005 respectively, and his doctoral degree in Electrical Engineering in 2007. His graduate research work was focused on gate stack engineering, with emphasis on binary metal alloys as gate electrode and on high mobility Ge channel devices. In 2007 he started working as Advisory Engineer/Scientist at Semiconductor Research and Development Center at IBM Microelectronics Division focusing on high performance eDRAM integration on 45nm SOI logic platform. Starting in 2010 Ravi was appointed the lead Engineer for 22nm SOI eDRAM development. For his many contributions to the success of eDRAM program at IBM, Ravi was awarded IBM’s Outstanding Technical Achievement Award in 2011. Ravi Joined Qualcomm in 2012, responsible for 20nm technology and product development as part of Qualcomm’s foundry engineering team. Ravi is also responsible for early learning on 16/14 nm FinFet technology nodes. Ravi had authored or co-authored over 50 publications, has several issues US patents and over 25 pending disclosures.