Herb Kroemer

A recent recipient of the Celebrated Member Award, Dr. Herbert Kroemer, was honored, “For fundamental contributions to the Field of Electron Devices for the benefit of humanity.”

Dr. Kroemer is the originator of several device concepts, including the heterostructure bipolar transistor, and the double-heterostructure laser. During the ‘60s, he also worked on microwave device problems, and in 1964 he was the first to publish an explanation for the Gunn Effect. With the emergence of molecular beam epitaxy in the mid-‘70s, he returned to heterostructure devices, and he was one of the first to apply the emerging new technology to new and unconventional materials combinations, such as GaP-on-Si and InAs/(Al,Ga)Sb structures, making several contributions to the development of MBE itself. His main research interests continue to be in the physics and technology of semiconductor heterostructures.

He has received numerous awards, including the 2000 Nobel Prize in Physics, “for developing semiconductor heterostructures used in high-speed and opto-electronics,” and the 2002 IEEE Medal of Honor.