John D. Cressler



Georgia Institute of Technology
School of Electrical and
Computer Engineering
777 Atlantic Drive NW
Atlanta GA 30332-0250
Phone: +1 404 894 5161
     Fax:+1 404 894 4641

John D. Cressler received the B.S. degree in physics from the Georgia Institute of Technology, Atlanta, GA in 1984, and the M.S. and Ph.D. degrees in applied physics from Columbia University, New York, in 1987 and 1990, respectively. From 1984 to 1992 he was on the research staff at the IBM Thomas J. Watson Research Center in Yorktown Heights, NY, and from 1992 to 2002 on the faculty at Auburn University, Auburn, AL. In 2002, he joined the faculty at the Georgia Institute of Technology (Georgia Tech), where he is currently Byers Professor of electrical and computer engineering. His research interests include: SiGe/strained Si devices and technology, mixed-signal circuits built such devices, radiation effects, cryogenic electronics, device-to-circuit interactions, noise and linearity, reliability physics, device-level simulation, and compact circuit modeling. Dr. Cressler has published over 300 papers related to his research. He is the co-author (with Guofu Niu) of Silicon-Germanium Heterojunction Bipolar Transistors, Artech House, Boston, MA, 2003, author of Reinventing Teenagers: the Gentle Art of Instilling Character in Our Young People, Xlibris, Philadelphia, PA, 2004, and editor of Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, CRC Press, Boca Raton, FL, 2006.

Dr. Cressler was associate editor for the IEEE Journal of Solid-State Circuits (1998-2001) and IEEE Transactions on Nuclear Science (2002-2005). He has served on the Technical Program Committees of the IEEEInternational Solid-State Circuits Conference (1992-1998, 1999-2001), the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (1995-1999, 2005-present), the IEEEInternational Electron Devices Meeting (1996-1997), the IEEE International Solid-State Device Research Conference (2003, 2005), the IEEE Nuclear and Space Radiation Effects Conference (2000, 2002-2005), and the IEEE International Reliability Physics Symposium (2005). He was the Technical Program Chair of the 1998 IEEE International Solid-State Circuits Conference (ISSCC), and the Conference Co-chair of the 2004 IEEETopical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. He currently serves on the Executive Steering Committee for the IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, as International Advisor for the IEEE European Workshop on Low-Temperature Electronics, on the Technical Program Committee for the IEEEInternational SiGe Technology and Device Meeting, and on the Executive Committee of the ECS Symposium on SiGe: Materials, Processing, and Devices. He has served as an IEEE Electron Device Society Distinguished Lecturer since 1994, and was awarded the 1994 Office of Naval Research Young Investigator Award for his SiGe research program, the 1996 C. Holmes MacDonald National Outstanding Teacher Award by Eta Kappa Nu, the 1996 Auburn University Alumni Engineering Council Research Award, the 1998 Auburn University Birdsong Merit Teaching Award, the 1999 Auburn University Alumni Undergraduate Teaching Excellence Award, and an IEEE Third Millennium Medal in 2000. He was elected IEEE Fellow in 2001 “for contributions to the understanding and optimization of silicon and silicon-germanium bipolar transistors.”