Ben Kaczer


Ben Kaczer
Kapeldreef 75
Leuven 3001
Phone: 32 16 281 557
    Fax: 32 16 281 844

Ben Kaczer is a Principal Scientist at IMEC, Belgium. He received the M.S. degree in Physical Electronics from Charles University, Prague, Czech Republic, in 1992 and the M.S. and Ph.D. degrees in Physics from The Ohio State University, Columbus, in 1996 and 1998, respectively. For his Ph.D. research on the ballistic-electron emission microscopy of SiO2 and SiC films he received the OSU Presidential Fellowship and support from Texas Instruments, Inc. In 1998 he joined the reliability group of imec, Leuven, Belgium, where his activities have included the research of the degradation phenomena and reliability assessment of SiO2, SiON, high-k, and ferroelectric films, planar and multiple-gate FETs, circuits, and characterization of Ge/III-V and MIM devices. He has co-authored more than 300 journal and conference papers, presented a number of invited papers and tutorials at international conferences, and received the 2011 IEEE EDS Paul Rappaport Award, five IEEE IRPS Best or Outstanding Paper Awards and an IEEE IPFA Best Paper Award. He has served or is serving at various functions at the IEDM, IRPS, SISC, INFOS, and WoDiM conferences. He is currently serving on the IEEE T. Electron Dev. Editorial Board.