Huiling Shang

MOS Devices and Technology


Systems and Technology
2070 Route 52
Mailstop 47B
Hopewell Junction NY 12533
Phone: +1 845 892 9180
    Fax: +1 845 892 6421

Huiling Shang received her Ph.D. degree in Electrical Engineering from Lehigh University, Bethlehem, Pennsylvania, in 2001.  She joined IBM T. J. Watson Research Center as a research staff member after her graduation. Her research experience includes both strained germanium and silicon-germanium channel CMOS device design and integration, transport physics in ultra thin SOI and FinFET device technologies. In 2006, she took an assignment as Technical Assistant to the Vice-President of IBM SRDC (Semiconductor Research & Development Center). Since then, she has been working in the IBM SRDC on advanced CMOS technology development. From September 2006 to June 2008, she managed the 45nm Bulk CMOS device design group. Starting in July 2008, she has been managing the 22/20nm CMOS device design group.

She is a member of the IEEE Electron Device Society AdCom Committee and the VLSI Circuits and Technology Committee.