Renuka Jindal


University of Louisiana at Lafayette
Madison Hall, Room 248J
131 Rex Street, PO Box 43890
Lafayette, LA 70504-3890
Tel: +1 337 482 6570
Fax:+1 337 482 6687

Renuka P. Jindal (S’77-M’81-SM’85-F’91) received his Ph.D. degree in Electrical Engineering from University of Minnesota 1981 with minors in Physics and Materials Science. Upon graduation, he joined Bell Laboratories at Murray Hill, New Jersey. His experience at Bell Labs for over 22 years bridged both technical and administrative roles. On the technical side he worked in all three areas of devices, circuits and systems. Highlights include fundamental studies of noise behavior of MOS devices with channel lengths in the few hundred nanometers regime. His contributions led to almost an order of magnitude reduction in the device noise. Over the years, this has made MOS the technology of choice for broad-band fiber-optics and narrow-band wireless base station and terminal applications including cell phones and pagers. He also designed and demonstrated high-performance single-chip gigahertz-band RF integrated circuits for AT&T’s Metrobus lightwave project. He researched the physics of carrier multiplication and invented techniques for ultra-low noise signal amplification and detection in terms of novel devices and circuits based upon a new principle of random multiplication and optoelectronic integration. On the administrative side, Dr Jindal developed and managed significant extramural funding from federal agencies and independent Lucent Technologies business units. He was solely responsible for developing and deploying a corporate-wide manufacturing-test strategy in relation to contract manufacturing for Lucent Technologies. In addition, he established and taught RF IC design courses at Rutgers University. In Fall 2002 Dr. Jindal accepted the position as William and Mary Hansen Hall Board of Regents Eminent Scholar Endowed Chair at University of Louisiana, Lafayette, Louisiana. There, he continues to teach and undertake fundamental research in the area of random processes, wireless and lightwave device, circuits and systems. He is also very active in professional activities in conjunction with the IEEE and is Electron Devices Society distinguished Lecturer. He has also participated in ABET activities as an evaluator for Electrical Engineering programs at institutions in the United States.

In 1985 Dr. Jindal became a senior member of IEEE. He received the Distinguished Technical Staff Award from Bell Labs in 1989. In 1991, he was elected Fellow of the IEEE for his contributions to the field of solid-state device noise theory and practice. In December 2000 he received the IEEE 3rd Millennium Medal. From 1987 to 1989 he served as editor of the solid-state device phenomena section of IEEE Transactions on Electron Devices. From 1990 to 2000 he was Editor-in-Chief of the IEEE Transactions on Electron Devices. From 2000 to 2008 he served as the Vice-President of Publications for the IEEE Electron Devices Society (EDS). In December 2007 he was voted in as President-Elect of EDS. From 2010 to 2011, Dr. Jindal served as the President of IEEE Electron Devices Society. Now, he continues to actively be involved with the Society as Junior Past President.