Andres Cuevas

Associate Editor



The Australian National University
Canberra 0200
Phone: +61 2 612 53702
Fax:     +61 2 612 50506


Andres Cuevas (SM ’96) received the M. Eng. and Ph.D. degrees from the Universidad Politecnica de Madrid, Spain, in 1976 and 1980, respectively. He was been an Associate Professor at the Universidad Politecnica de Madrid and a Fulbright Fellow at Stanford University. In 1993 he joined The Australian National University, where he is currently a Professor of engineering. His contributions to education have included numerous courses on electronic circuits, semiconductor devices, photovoltaic technology, solar cell fundamentals and energy resources. He has been convenor of graduate and undergraduate research programs, Associate Dean and, between 2007 and 2010, Head of the ANU School of Engineering. He has coauthored approximately 100 journal and 200 conference papers on a range of topics related to silicon solar cell technology.

His early work on bifacial solar cells led to the invention of the albedo-collecting photovoltaic module and was instrumental in the establishment of the first Spanish PV company, Isofoton S.A. At Stanford University he developed a front-contacted device that reached a conversion efficiency of 26%. His research on the theoretical understanding and the experimental optimization of highly doped electron and hole collector regions has significantly contributed to the advancement of silicon solar cell technology. Breaking with a long tradition, in 1988 he demonstrated a 19% efficient thick-collector solar cell. Research on heavily doped silicon has been complemented in later years with measurements of energy bandgap narrowing and surface recombination velocity of phosphorus and boron diffused regions, together with simple models to analyse them.

Professor Cuevas has collaborated extensively as a visiting Professor at key research institutes in France, Germany, Italy, Netherlands, Portugal, Spain, Switzerland and the US. He collaborated with Ron Sinton in the development of Quasi-Steady-State Photoconductance and Voltage techniques, which have permitted an unprecedented progress in the understanding of silicon materials and interfaces. With co-workers, he has clarified important physical effects that occur in PV silicon materials, including carrier trapping, light-induced degradation and recombination due to metal contaminants and defects. His research group at the ANU was the first to demonstrate carrier lifetimes above one millisecond in multicrystalline silicon, achieving a conversion efficiency of 18.6% in 1999. Work on surface passivation by thermal oxidation and PECVD silicon nitride deposition led to world-class results and permitted the empirical determination of an upper limit to intrinsic carrier recombination in silicon. His current research interests include low purity compensated silicon materials, the passivation of silicon surfaces using dielectric coatings, and the development of advanced silicon solar cells, including their theoretical modeling.