Andries J. Scholten

Device and Process Modeling


NXP Semiconductors
High Tech Campus 37
Eindhoven 5656 AE
The Netherlands
Phone: 31 40 274 9685
   Fax: 31 40 274 6276


Andries J. Scholten received the M.Sc. and Ph.D. degrees in experimental physics from Utrecht University, The Netherlands, in 1991 and 1995, respectively.

In 1996, he joined Philips Research Laboratories (now NXP Semiconductors), Eindhoven, The Netherlands, where he has worked on compact MOS modeling for circuit simulation, with a focus on the modelling of thermal noise and non-quasi-static effects. He has contributed to the development and industrialization of well-known compact MOSFET models such as MOS Model 9, MOS Model 11, and the world-standard PSP model. His current research is directed towards RF CMOS and HBT reliability and reliability simulation.