Matthias Passlack

Compound Semiconductor Devices
Emerging Technologies and Devices


TSMC Europe BV
Advanced Device Technology Division Belgium
Kapeldreef 75
B- 3001 Leuven
Phone: 32 16 28 1074

Matthias Passlack received the Dipl.-Ing. (M.Sc.) and Dr.-Ing. (Ph.D.) degrees, both in Electrical Engineering, from the Technische Universität Dresden, Germany, in 1984 and 1988, respectively. In 1993, he joined AT&T Bell Laboratories in Murray Hill, New Jersey, USA, where he co-invented a ground breaking approach towards device quality oxide/GaAs interfaces. In 1995, he joined Motorola's Corporate Research Laboratories in Tempe, Arizona, USA. Dr. Passlack led R&D efforts at Motorola and Freescale Semiconductor in his capacity as a Distinguished Member of the Technical Staff in the field of III-V MOS materials, processes, characterization, devices, and physics. In 2006, these efforts culminated in the development of III-V MOSFETs performing in-line with ideal model predictions. In 2009, he joined TSMC Europe as a Deputy Director.

Dr. Passlack has published two book chapters and more than 80 articles in peer refereed journals, and he holds more than 35 issued and pending US patents. Dr. Passlack is a co-recipient of the 2003 Ed Nicollian Award, he received the Motorola "Distinguished Innovator Award" in 2001, and the "Paper of the Month" award from Electronics Letters in 2007. His work was featured in "GaAsing Up Cellphones" IEEE Spectrum, May 2006, Compound Semiconductor Magazine (January 2008, May 2007), EE Times (Feb. 6, 2006) and Science Magazine (2003). Dr. Passlack is a Fellow of IEEE.