2016 Archived Content

• System On Microheater for On-Chip Annealing of Defects Generated by Hot-Carrier Injection, Bias Temperature Instability, and Ionizing Radiation
• Four-State Anti-Ferroelectric Random Access Memory
• High-Performance Solution-Processed ZincTin-Oxide Thin-Film Transistors Employing Ferroelectric Copolymers Fabricated at Low Temperature for Transparent Flexible Displays
• OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET
• RF-MEMS Technology for Future Mobile and High-Frequency Applications: Reconfigurable 8-Bit Power Attenuator Tested up to 110 GHz

• Low-Leakage and Low-Trigger-Voltage SCR Device for ESD Protection in 28-nm High- $k$ Metal Gate CMOS Process
• AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
• Channel-Stacked NAND Flash Memory With Tied Bit-Line and Ground Select Transistor
• 600 V/ $1.7~Omega$ Normally-Off GaN Vertical Trench MetalOxideSemiconductor Field-Effect Transistor
• IGZO Thin-Film Light-Addressable Potentiometric Sensor
• An Ultra-Short Channel Monolayer MoS2 FET Defined By the Curvature of a Thin Nanowire

• ·  High-Performance Lateral Nanowire InGaAs MOSFETs With Improved On-Current
• ·  A Disturbance-Free Energy-Efficient STT-MRAM Based on Complementary Polarizers
• ·  Advanced Four-Mask Process Bottom-Gate Poly-Si TFT via Self-Aligned NiSi2 Seed-Induced Lateral Crystallization
• ·  GaN High-Electron Mobility Transistor Track-and-Hold Sampling Circuit With Over 100-dB Signal-to-Noise Ratio
• ·  RF-MEMS Technology for 5G: Series and Shunt Attenuator Modules Demonstrated up to 110 GHz

• Sub-10-nm Fin-Width Self-Aligned InGaAs FinFETs
• Why Is FEHfO2 More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention Perspective
• Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip With Under-Layered Nitride
• 1.23-ns Pulsewidth of Quenched High Gain GaAs Photoconductive Semiconductor Switch at 8-nJ Excitation
• Demonstration of Diamond-Based Schottky p-i-n Diode With Blocking Voltage 500 V
• Characterization of FeCl3 Intercalation Doped CVD Few-Layer Graphene

• Novel BF Implantation for High Performance Ge pMOSFETs
• Dissolvable and Biodegradable Resistive Switching Memory Based on Magnesium Oxide
• High-Performance Top-Gate and Self-Aligned InGaZn-O Thin-Film Transistor Using Coatable Organic Insulators Fabricated at 150 C
• Efficient Quantum Dots Light-Emitting Devices Using Polyvinyl Pyrrolidone-Capped ZnO Nanoparticles With Enhanced Charge Transport
• Experimental Demonstration of High-Voltage 4H-SiC Bi-Directional IGBTs
• Intrinsic Robustness of TFET Subthreshold Swing to Interface and Oxide Traps: A Comparative PBTI Study of InGaAs TFETs and MOSFETs

• THz Detection Using p/n-Well Diodes Fabricated in 45-nm CMOS
• Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced $I$ $V$ Characteristic for Switching Applications
• Layer Selection by Multi-Level Permutation in 3-D Stacked NAND Flash Memory
• Demonstration of Convolution Kernel Operation on Resistive Cross-Point Array
• White Light-Emitting Diodes With High Color Rendering Index and Tunable Color Temperature Fabricated Using Separated Phosphor Layer Structure
• An Active Metamaterial Antenna With MEMS-Modulated Scanning Radiation Beams
• Impact of Random Variations on Cell Stability and Write-Ability of Low-Voltage SRAMs Using Monolayer and Bilayer Transition Metal Dichalcogenide (TMD) MOSFETs